KSP63TA中文资料

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UL635H256s2K35G1资料

Power Control
VCC VSS
VCC
Store/ Recall
Control
Software Detect
A0 - A13
G
E W
Operating Mode
E
W
G
DQ0 - DQ7
Standby/not selected
H
*
*
Internal Read
L
H
H
High-Z High-Z
Read
Symbol
Conditions
VCC
tc = 35 ns
tc = 45 ns
VIL
-2 V at Pulse Width 10 ns permitted
VIH
UL635H256
Min.
3.0 2.7 -0.3 2.2
Max.
3.6 3.6 0.8 VCC+0.3
Unit
V V V V
DC Characteristics
• Operating temperature range:
0 to 70 °C
-40 to 85 °C
• QS 9000 Quality Standard • ESD protection > 2000 V
(MIL STD 883C M3015.7-HBM)
• RoHS compliance and Pb- free • Package:SOP28 (330 mil)
volatile static RAM 32768 x 8 bits
• 35 and 45 ns Access Times • 15 and 20 ns Output Enable

NACE470K63V6.3X6.3TR13F中文资料

1®NIC COMPONENTS CORP. ww www www www Surface Mount Aluminum Electrolytic CapacitorsNACE SeriesFEATURES•CYLINDRICAL V-CHIP CONSTRUCTION• LOW COST, GENERAL PURPOSE, 2000 HOURS AT 85O C •NEW EXP ANDED CV RANGE (up to 6800µF)•ANTI-SOLVENT (2 MINUTES)•DESIGNED FOR AUTOMATIC MOUNTING AND REFLOW SOLDERINGCHARACTERISTICS*See standard products and case size table for items available in 10% toleranceRated Voltage Range 4.0 ~ 100Vdc Rate Capacitance Range 0.1 ~ 6,800µFOerating Temp. Range -40°C ~ +85°CCapacitance Tolerance ±20% (M), ±10%Max. Leakage Current After 2 Minutes @ 20°C0.01CV or 3µA whichever is greaterTan δ @120Hz/20°C W.V . (Vdc) 4.0 6.31016253550631003mm Dia.0.400.350.240.190.160.140.14--4 ~ 6.3mm Dia.0.350.260.200.160.140.120.100.100.108x6.5mm Dia.-0.250.260.200.160.140.12-0.108mm Dia. ~ upC<1000µF 0.400.300.240.200.160.140.120.120.10C<1500µF -0.310.250.21-0.15---C<2200µF -0.320.32-0.18----C<3300µF -0.34-0.24-----C<4700µF --0.36------C<6800µF -0.40-------Low Temperature StabilityImpedance Ratio @ 120HzW.V . (Vdc) 4.0 6.3101625355063100Z-25°C/Z+20°C 733222222Z-40°C/Z+20°C 1586443333Load Life Test85°C 2,000 HoursCapacitance Change Within ± 25% of initial measured valueTan δLess than 200% of specifi ed max. valueLeakage Current Less than specifi ed max. value NACE 101 M 16V 6.3x5.5 TR 13 FRoHS Compliant97% Sn (min.), 3% Bi (max.) 330mm (13”) Reel Tape & Reel Size in mm Working VoltageTolerance Code M=20%, K=10% Capacitance Code in µF , fi rst 2 digits are signifi cant Third digit is no. of zeros, “R” indicates decimal for values under 10µF SeriesPART NUMBER SYSTEMRoHSCompliantincludes all homogeneous materials *See Part Number System for Details PRECAUTIONSPlease review the notes on correct use, safety and precautions found on pages T10 & T11of NIC’s Electrolytic Capacitor catalog . Also found at /precautionsIf in doubt or uncertainty, please review your specifi c application - process details withNIC’s technical support personnel: tpmg@2MAXIMUM RIPPLE CURRENT O MAXIMUM ESRO Surface Mount Aluminum Electrolytic CapacitorsNACE SeriesSTANDARD PRODUCT AND CASE SIZE TABLE DφxL (mm)*Items available in optional 10% toleranceSurface Mount Aluminum Electrolytic Capacitors NACE Series+ -3。

QTZ63塔吊说明书

目录第一章概述 (2)第二章起重机技术性能 (5)第三章起重机构造简述 (8)第四章起重机固定式工作状态的安装与拆卸 (25)第五章起重机附着式工作状态的安装与拆卸 (46)第六章起重机的使用与操作 (50)第七章起重机的维护与保养 (56)第八章起重机常见故障与排除 (61)第九章其它 (63)第一章概述1.1 QTZ63E塔式起重机是由徐州建筑工程机械有限公司设计的新型建筑用塔式起重机，该机为水平臂架，小车变幅，上回转自升式多用途塔机。

其吊臂为50米、55米两种臂长的组合，最大起重量为6吨，额定起重力矩为76吨·米。

该机主要特点如下：（1）上部采用液压顶升，来实现增加或减少塔身标准节，使塔机能随着建筑物高度变化而升高或降低，同时塔机的起重能力不因塔机的升高而降低。

（2）工作速度高，调整性能好，工作平稳，效率高；起升机构采用三速电机，和单速比减速箱，能实现重载低速，最高速度可达80m/min。

小车牵引机构：牵引小车在水平臂上变幅，其有良好的安装就位性能。

回转机构采用行星减速机，配置液力偶合器，承载能力高，起动制动平稳，工作可靠。

（3）工作范围大，工作方式多，适用对象广。

通过更换或增减一些部件及辅助装置，塔机可以获得固定，附着于建筑物两种工作方式，以满足不同的使用要求。

附着式的最大起升高度可达140米。

附着式起重机的塔身可直接安装在建筑物上或建筑物附近旁的混凝土基础上，为了减少塔身计算长度以保持其设计起重能力，设有五套附着装置。

第一附着装置距基础面33米，第二附着装置距离第一附着装置附着点是30米，第三附着装置距第二附着装置附着点是27米，第四附着装置距第三附着装置附着点是24米，第五附着装置距第四附着装置附着点是15米，附着点的高度可允许现场根据楼层的高度做些适当的调整。

塔机独立固定式工作，最大起升高度为40米。

（4）各种安全装置齐全，各机构均设有制动器，可保证工作安全可靠。

该机设有起升高度限位器，塔机回转限位器等安全装置。

MCM63P531TQ9R资料

元器件交易网
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MCM63P531/D
Advance Information
MCM63P531
32K x 32 Bit Pipelined BurstRAM™ Synchronous Fast Static RAM
BurstRAM is a trademark of Motorola, Inc. PowerPC is a trademark of IBM Corp. Pentium is a trademark of Intel Corp.
This document contains information on a new product. Motorola reserves the right to change or discontinue this product without notice.
SBc
WRITE REGISTER d SBd
K2
K
SE1 SE2 SE3 G
ENABLE REGISTER
ENABLE REGISTER
DQa – DQd
MCM63P531 2
MOTOROLA FAST SRAM
元器件交易网
PIN ASSIGNMENTS
SA SA SE1 SE2 SBd SBc SBb SBa SE3 VDD VSS K SGW SW G ADSC ADSP ADV SA SA NC DQc DQc VDD VSS DQc DQc DQc DQc VSS VDD DQc DQc NC VDD NC VSS DQd DQd VDD VSS DQd DQd DQd DQd VSS VDD DQd DQd NC 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 LBO SA SA SA SA SA1 SA0 NC NC VSS VDD NC NC SA 81 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 50

SPX1117中文数据手册

表1 PC 板（mm2） 2500 2500
图 20 纹波抑制比；Vin=3.3V，Vout=1.8V（adj.），Iload=200mA
顶层 Copper（mm2） 2500 1250
背层 Copper(mm2) 2500 2500
热阻（JUNC to AMB） ℃/W 46 47
2500
950
2500
（VIN-VOUT）=5V 25℃，30mS 脉冲 fRIPPLE=120Hz，VIN-VOUT=2V， VRIPPLE=1VPP 125℃，1000Hrs Vout 百分比，10Hz≤f≤10kHz TO-220 接点->焊片 TO-220 接点->周围环境 TO-263 接点->焊片 TO-263 接点->周围环境 TO-252 接点->焊片
4
图5 SPX11173M3-3.3电流极限值，Iout从10mA到1A时的输出电压偏差图 6 Vout vs 温度，VIN=2.5V，IOUT=10mA 图 7 VIN=3.0V，IOUT=10mA 图 8 VIN=3.3V，IOUT=10mA 5
图9 VIN=4.0V，IOUT=10mA 图 10 VIN=4.85，IOUT=10mA 图 11 VIN=4.85，IOUT=10mA 图 12 VIN=5.0V，IOUT=10mA 图 13 线性调节率 Vs 温度，Vout=1.8V（可调节），VIN=3.3V 6
+ 1.5V
3
图1 SPX1117M3-3.3负载调节率；VIN=4.8V 图 2 SPX1117M3-3.3 线性调节率；IOUT=10mA 图 3 SPX1117M3-3.3 压差 vs 输出电流；VIN=4.8V，COUT=2.2uF 图 4 SP1117M3-3.3 的电流极限值；VIN=4.8V，CIN=COUT=1uF，IOUT 从 10mA 到电流极限值

B45196P6334K109中文资料

Features
Operating temperature up to 150 °C Outstanding reliability Very low failure rate Qualification in compliance with AEC-Q200 High volumetric efficiency Excellent solderability Stable temperature and frequency characteristics Low leakage current, low dissipation factor Low self-inductance High resistance to shock and vibration
元器件交易网
Tantalum chip capacitors Performance, High Reliability 150 °C
B45196P, B45198P
Construction
Polar tantalum capacitors with solid electrolyte Conventional TaMnO2 technology Flame-retardant plastic case (UL 94 V-0) Optionally tinned or gold-plated terminals
Dimensions in mm (inches)
KEMET EIA/IECQ
L
W
H
A
3216-18 3.2 ±0.2 1.6 ±0.2 1.6 ±0.2
(.126
(.063
(.063
±0.008) ±0.008)
±0.008)

AG201-63G中文资料

MHz dB dB dB dBm dBm dB
100 11.4 -30 -16 +6.5 +19.5 4.3
500 11.4 -30 -16 +6.5 +19.5 4.3
900 11.3 -25 -16 +6.5 +19.1 4.4
1900 11.0 -20 -16 +5.8 +18.5 4.6
2140 10.9 -15 -16 +5.1 +18.2 4.6
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Absolute Maximum Rating
Parameter
Storage Temperature DC Voltage RF Input Power (continuous) Thermal Resistance, Rth Junction Temperature
Output Power / Gain vs. Input Power
frequency = 900 MHz
12
12
5
10 Gain
8
Gain (dB)
8
4
0
6
0
-5
-40 C

+25 C
+85 C
4
-4
Output Power
-10
2
-8
0 0.5 1 1.5 2 2.5 3 3.5 4
-20 -16 -12 -8 -4 0 4
The AG201-63 consists of a Darlington-pair amplifier using the high reliability InGaP/GaAs HBT process technology and only requires DC-blocking capacitors, a bias resistor, and an inductive RF choke for operation.

BUF634中文资料

1 Feature 1特点•High Output Current: 250 mA•高输出电流：250毫安•Slew Rate: 2000 V/µs •摆率(电压转换速率)：2000 V /µS•Pin-Selected Bandwidth: 30 MHz to 180 MHz •引脚选择带宽：30兆赫至180兆赫•Low Quiescent Current: 1.5 mA (30 MHz BW) •低静态输出电流：1.5毫安（30兆赫带宽）•Wide Supply Range: ±2.25 to ±18 V •宽电压供应范围：2.25至18伏•Internal Current Limit •内部电流限制•Thermal Shutdown Protection •热关机保护•8-Pin PDIP, SOIC-8, 5-Lead TO-220, 5-Lead DDPAK-TO-263 Surface-Mount•8引脚PDIP，SOIC - 8、5引脚TO - 220，5引脚ddpak-to-263表面贴装2 Applications 2应用•Valve Driver •阀门驱动器•Solenoid Driver•螺线管（电磁）驱动器•Op Amp Current Booster•运算放大器电流放大器•Line Driver•线路驱动器•Headphone Driver•耳机驱动器•Video Driver•视频驱动程序•Motor Driver •电机驱动•Test Equipment•测试设备•ATE Pin Driver•ATE自测引脚驱动程序3 Description3 描述The BUF634 device is a high speed, unity-gain open-loop buffer recommended for a wide range of applications. The BUF634 device can be used inside the feedback loop of op amps to increase output current, eliminate thermal feedback, and improve capacitive load drive.是一种高速开环增益缓冲器广泛的应用范围中的建议，它可用于运算放大器的反馈环路内，一起增加输出电流消除热反馈和改善容性负载驱动。

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Electrical Characteristics Ta=25°C unless otherwise noted

* Pulse Test: PW≤300µs, Duty Cycle≤2%

SymbolParameterValueUnitsVCBO Collector-Base Voltage : KSP62 : KSP63/64-20-30VV

VCEOCollector-Emitter Voltage

: KSP62 : KSP63/64-20-30VVVEBOEmitter-Base Voltage-10VICCollector Current-500mAPCCollector Power Dissipation625mWTJJunction Temperature150°CTSTGStorage Temperature-55~150°C

SymbolParameterTest ConditionMin.Max.UnitsBVCESCollector-Emitter Breakdown Voltage: KSP62: KSP63/64IC= -100µA, IB=0

-20-30VV

ICBOCollector Cut-off Current

: KSP62: KSP63/64VCB= -15V, IE=0VCB= -30V, IE=0-100-100nAnA

IEBOEmitter Cut-off CurrentVBE= -10V, IC=0-100nAhFE* DC Current Gain: KSP62: KSP63: KSP64: KSP63: KSP64VCE= -5V, IC= -10mA

VCE= -5V, IC= -100mA20K5K10K10K20KVCE (sat)* Collector-Emitter Saturation Voltage: KSP62: KSP63/64IC= -10mA, IB= -0.01mAIC= -100mA, IB= -0.1mA-1.0-1.5VVVBE (on)* Base-Emitter On Voltage

: KSP62: KSP63/64VCE= -5V, IC= -10mAVCE= -5V, IC= -100mA-1.4-2VV

fTCurrent Gain Bandwidth Product: KSP63/64VCE= -5V, IC= -100mAf=100MHz125MHz

KSP62/63/64Darlington Transistor•Collector-Emitter Voltage: VCES=KSP62: 20VKSP63/64: 30V•Collector Power Dissipation: PC (max)=625mW

1. Emitter 2. Base 3. CollectorTO-921

KSP62/63/64Typical Characteristics

Figure 1. DC current GainFigure 2. Base-Emitter Saturation VoltageCollector-Emitter Saturation Voltage

Figure 3. Base-Emitter On VoltageFigure 4. Current Gain Bandwidth Product

-1-10-100-10001k10k100k1000kVCE = -5V

hFE, DC CURRENT GAIN

IC[mA], COLLECTOR CURRENT-1-10-100-1000-0.01-0.1-1

-10IC = 1000 IB

VCE(sat)VBE(sat)

VBE(sat), VCE(sat)[V], SATURATION V

OLTAGE

IC[mA], COLLECTOR CURRENT

-0.0-0.4-0.8-1.2-1.6-2.0-2.4-2.8110100VCE = -5V IC [mA], COLLECTOR CURRENTVBE[V], BASE-EMITTER VOLTAGE-1-10-100-10001101001000VCE = -5V

fT[MHz],

CURRENT GAIN BAND

WIDTH PRODUCT

IC[mA], COLLECTOR CURRENT

元器件交易网www.cecb2b.com0.46 ±0.10

1.27TYP(R2.29)3.86MAX[1.27 ±0.20]1.27TYP[1.27 ±0.20]

3.60 ±0.20

14.47 ±0.40

1.02 ±0.10(0.25)

4.58 ±0.204.58+0.25–0.15

0.38+0.10–0.05

TO-92Package DimensionsKSP62/63/64

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DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANYPRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANYLIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTORCORPORATION.As used herein:

1. Life support devices or systems are devices or systemswhich, (a) are intended for surgical implant into the body,or (b) support or sustain life, or (c) whose failure to performwhen properly used in accordance with instructions for useprovided in the labeling, can be reasonably expected toresult in significant injury to the user.2. A critical component is any component of a life supportdevice or system whose failure to perform can bereasonably expected to cause the failure of the life supportdevice or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONSDefinition of Terms

Datasheet IdentificationProduct StatusDefinitionAdvance InformationFormative or In DesignThis datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.

PreliminaryFirst ProductionThis datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.

No Identification NeededFull ProductionThis datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design.