MRF6S9045NR1中文资料

RF Power Field Effect TransistorsN-Channel Enhancement-Mode Lateral MOSFETsDesigned for broadband commercial and industrial applications withfrequencies up to 1000 MHz. The high gain and broadband performance ofthese devices make them ideal for large-signal, common-source amplifierapplications in 28 volt base station equipment.•Typical Single-Carrier N-CDMA Performance @ 880 MHz, V DD = 28 Volts,I DQ = 350 mA, P out = 10 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging,Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =9.8 dB @ 0.01% Probability on CCDF.Power Gain — 22.7 dBDrain Efficiency — 32%ACPR @ 750 kHz Offset — -47 dBc @ 30 kHz BandwidthGSM EDGE Application•Typical GSM EDGE Performance: V DD = 28 Volts, I DQ = 350 mA,P out = 16 Watts Avg., Full Frequency Band (921-960 MHz)Power Gain — 20 dBDrain Efficiency — 46%Spectral Regrowth @ 400 kHz Offset = -62 dBcSpectral Regrowth @ 600 kHz Offset = -78 dBcEVM — 1.5% rmsGSM Application•Typical GSM Performance: V DD = 28 Volts, I DQ = 350 mA, P out = 45 Watts,Full Frequency Band (921-960 MHz)Power Gain — 20 dBDrain Efficiency — 68%•Capable of Handling 5:1 VSWR, @ 28 Vdc, 880 MHz, 45 Watts CWOutput Power•Characterized with Series Equivalent Large-Signal Impedance Parameters•Integrated ESD Protection•N Suffix Indicates Lead-Free Terminations•200°C Capable Plastic Package•TO-270-2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm,13 inch Reel.•TO-272-2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm,13 inch Reel.Table 1. Maximum RatingsRating Symbol Value Unit Drain-Source Voltage V DSS -0.5, +68Vdc Gate-Source Voltage V GS -0.5, +12Vdc Total Device Dissipation @ T C = 25°CDerate above 25°CP D1751.0WW/°C Storage Temperature Range T stg-65 to +150°C Operating Junction Temperature T J200°CDocument Number: MRF6S9045Rev. 1, 6/2005 Freescale SemiconductorTechnical DataMRF6S9045NR1MRF6S9045NBR1MRF6S9045MR1MRF6S9045MBR12RF Device DataFreescale SemiconductorMRF6S9045NR1 MRF6S9045NBR1 MRF6S9045MR1 MRF6S9045MBR1Table 2. Thermal CharacteristicsCharacteristicSymbol Value (1,2)Unit Thermal Resistance, Junction to Case Case Temperature 81°C, 45 W CW Case Temperature 79°C, 10 W CWR θJC1.01.1°C/WTable 3. ESD Protection CharacteristicsTest MethodologyClass Human Body Model (per JESD22-A114)1A (Minimum)Machine Model (per EIA/JESD22-A115) A (Minimum)Charge Device Model (per JESD22-C101)IV (Minimum)Table 4. Moisture Sensitivity LevelTest MethodologyRating Package Peak TemperatureUnit Per JESD 22-A113, IPC/JEDEC J-STD-0203260°CTable 5. Electrical Characteristics (T C = 25°C unless otherwise noted)CharacteristicSymbolMinTypMaxUnitOff CharacteristicsZero Gate Voltage Drain Leakage Current (V DS = 68 Vdc, V GS = 0 Vdc)I DSS ——10µAdc Zero Gate Voltage Drain Leakage Current (V DS = 28 Vdc, V GS = 0 Vdc)I DSS ——1µAdc Gate-Source Leakage Current (V GS = 5 Vdc, V DS = 0 Vdc)I GSS——1µAdcOn CharacteristicsGate Threshold Voltage(V DS = 10 Vdc, I D = 200 µA)V GS(th)123Vdc Gate Quiescent Voltage(V DS = 28 Vdc, I D = 350 mAdc)V GS(Q)2 2.94Vdc Drain-Source On-Voltage(V GS = 10 Vdc, I D = 1.0 Adc)V DS(on)—0.220.3Vdc Forward Transconductance (V DS = 10 Vdc, I D = 3 Adc)g fs—4—SDynamic CharacteristicsInput Capacitance(V DS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V GS = 0 Vdc)C iss —77—pF Output Capacitance(V DS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V GS = 0 Vdc)C oss —27—pF Reverse Transfer Capacitance(V DS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V GS = 0 Vdc)C rss—0.78—pFFunctional Tests (In Freescale Test Fixture, 50 ohm system) V DD = 28 Vdc, I DQ = 350 mA, P out = 10 W Avg., f = 880 MHz, Single-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF Power Gain G ps 2122.725dB Drain EfficiencyηD 30.532—%Adjacent Channel Power Ratio ACPR —-47-45dBc Input Return LossMRF6S9045NR1(MR1)MRF6S9045NBR1(MBR1)IRL—-20-20-9-7dB1.MTTF calculator available at /rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product.2.Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to /rf. Select Documentation/Application Notes - AN1955.MRF6S9045NR1 MRF6S9045NBR1 MRF6S9045MR1 MRF6S9045MBR13RF Device DataFreescale SemiconductorTable 5. Electrical Characteristics (T C = 25°C unless otherwise noted) (continued)CharacteristicSymbolMinTypMaxUnitTypical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture Optimized for 921-960 MHz, 50 οhm system) V DD = 28 Vdc, I DQ = 350 mA, P out = 16 W Avg., f = 921-960 MHz, GSM EDGE Signal Power Gain G ps —20—dB Drain Efficiency ηD —46—%Error Vector MagnitudeEVM — 1.5—%Spectral Regrowth at 400 kHz Offset SR1—-62—dBc Spectral Regrowth at 600 kHz OffsetSR2—-78—dBcTypical CW Performances (In Freescale GSM Test Fixture Optimized for 921-960 MHz, 50 οhm system) V DD = 28 Vdc, I DQ = 350 mA, P out = 45 W, f = 921-960 MHz Power Gain G ps —20—dB Drain Efficiency ηD —68—%Input Return LossIRL —-12—dB P out @ 1 dB Compression Point (f = 940 MHz)P1dB—52—W4RF Device DataFreescale SemiconductorMRF6S9045NR1 MRF6S9045NBR1 MRF6S9045MR1 MRF6S9045MBR1Figure 1. MRF6S9045NR1(MR1)/NBR1(MBR1) Test Circuit SchematicZ100.360″ x 0.270″ Microstrip Z110.063″ x 0.270″ Microstrip Z120.360″ x 0.065″ Microstrip Z130.095″ x 0.065″ Microstrip Z140.800″ x 0.065″ Microstrip Z150.260″ x 0.065″ Microstrip Z160.325″ x 0.065″ MicrostripPCBTaconic RF-35 0.030″, εr = 3.5Z10.215″ x 0.065″ MicrostripZ20.221″ x 0.065″ Microstrip Z30.500″ x 0.100″ Microstrip Z40.460″ x 0.270″ Microstrip Z50.040″ x 0.270″ MicrostripZ60.280″ x 0.270″ x 0.530″Taper Z70.087″ x 0.525″ Microstrip Z80.435″ x 0.525″ Microstrip Z90.057″ x 0.525″ MicrostripTable 6. MRF6S9045NR1(MR1)/NBR1(MBR1) Test Circuit Component Designations and ValuesPartDescriptionPart NumberManufacturer B1Ferrite Bead 2743019447Fair Rite B2Ferrite Bead2743021447Fair Rite C1, C7, C10, C1447 pF Chip Capacitors100B470JP500X ATC C2, C4, C120.8-8.0 pF Variable Capacitors, Gigatrim 27291SL Johanson C315 pF Chip Capacitor 100B150JP500X ATC C5, C612 pF Chip Capacitors 100B120JP500X ATC C8, C913 pF Chip Capacitors 100B130JP500X ATC C117.5 pF Chip Capacitor100B7R5JP500X ATC C130.6-4.5 pF Variable Capacitor, Gigatrim 27271SLJohanson C15, C16, C1710 µF, 35 V Tantalum Capacitors T491D106K035AS Kemet C18220 µF, 50 V Electrolytic Capacitor 678D227M025CG3D Vishay L1, L212.5 nH Inductor A04T-5Coilcraft R1 1 k Ω Chip Resistor CRCW12061001F100Vishay Dale R2560 k Ω Chip Resistor CRCW12065603F100Vishay Dale R312 Ω Chip ResistorCRC120612R0F100Vishay DaleMRF6S9045NR1 MRF6S9045NBR1 MRF6S9045MR1 MRF6S9045MBR15RF Device DataFreescale SemiconductorFigure 2. MRF6S9045NR1(MR1)/NBR1(MBR1) Test Circuit Component Layout6RF Device DataFreescale SemiconductorMRF6S9045NR1 MRF6S9045NBR1 MRF6S9045MR1 MRF6S9045MBR1TYPICAL CHARACTERISTICSFigure 5. Two-Tone Power Gain versusOutput Power 1001924P out , OUTPUT POWER (WATTS) PEP222010G p s , P O W E R G A I N (d B )23211300Figure 6. Third Order Intermodulation Distortionversus Output Power1P out , OUTPUT POWER (WATTS) PEP101000.5MRF6S9045NR1 MRF6S9045NBR1 MRF6S9045MR1 MRF6S9045MBR17RF Device DataFreescale SemiconductorTYPICAL CHARACTERISTICSFigure 7. Intermodulation Distortion Productsversus Output Power10−80−10P out , OUTPUT POWER (WATTS) PEP−20−30−401100I M D , I N T E R M O D U L A T I O N D I S T O R T I O N (d B c )−50−60−70Figure 8. Intermodulation Distortion Productsversus Tone Spacing10−7000.05TWO−TONE SPACING (MHz)−10−20−30−40−50−601100I M D , I N T E R M O D U L A T I O N D I S T O R T I O N (d B c )0.1Figure 9. Pulse CW Output Power versusInput Power3354P in , INPUT POWER (dBm)525048442426252827312953495147303223P o u t , O U T P U T P O W E R (d B m )4645Figure 10. Single-Carrier N-CDMA ACPR, ALT1, PowerGain and Drain Efficiency versus Output Power0−85P out , OUTPUT POWER (WATTS) AVG.60−2550−3540−4530−5510−75110−6520ηD , D R A I N E F F I C I E N C Y (%), G p s , P O W E R G A I N (d B )A L T 1, C H A N N E L P O W E R (dB c )A C P R , A D J A C E N T C H A N N E L P O W E R R A T I O (dB c )508RF Device DataFreescale SemiconductorMRF6S9045NR1 MRF6S9045NBR1 MRF6S9045MR1 MRF6S9045MBR1TYPICAL CHARACTERISTICS2423222018ηD , D R A I N E F F I C I E N C Y (%)G p s , P O W E R G A I N (d B )G p s , P O W E R G A I N (d B )2119171621010T J , JUNCTION TEMPERATURE (°C)This above graph displays calculated MTTF in hours x ampere 2drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by I D 2 for MTTF in a particular application.101010M T T F F A C T O R (H O U R S X A M P S 2)90110130150170190Figure 13. MTTF Factor versus Junction Temperature100120140160180200MRF6S9045NR1 MRF6S9045NBR1 MRF6S9045MR1 MRF6S9045MBR19RF Device DataFreescale SemiconductorN-CDMA TEST SIGNAL100.00011000PEAK −TO−AVERAGE (dB)Figure 14. Single-Carrier CCDF N-CDMA1010.10.010.0012468P R O B A B I L I T Y (%)−60−110−10(d B )−20−30−40−50−70−80−90−1002.90.7 2.21.50−0.7−1.5−2.2−2.9−3.6 3.6f, FREQUENCY (MHz)Figure 15. Single-Carrier N-CDMA Spectrum10RF Device DataFreescale SemiconductorMRF6S9045NR1 MRF6S9045NBR1 MRF6S9045MR1 MRF6S9045MBR1Figure 16. Series Equivalent Source and Load Impedancef MHz Z sourceΩZ load Ω850865880 3.05 + j1.273.31 + j1.333.16 + j1.330.42 + j0.300.42 + j0.440.45 + j0.60V DD = 28 Vdc, I DQ = 350 mA, P out = 10 W Avg.8959103.35 + j1.053.43 + j1.200.48 + j0.740.50 + j0.85Z source =Test circuit impedance as measured fromgate to ground.Zload=Test circuit impedance as measured from drain to ground.ZsourceZloadOutput Matching NetworkZ o = 5 ΩZ sourcef = 850 MHzf = 910 MHzZ loadf = 910 MHzf = 850 MHzMRF6S9045NR1 MRF6S9045NBR1 MRF6S9045MR1 MRF6S9045MBR111RF Device DataFreescale SemiconductorNOTES12RF Device Data Freescale SemiconductorMRF6S9045NR1 MRF6S9045NBR1 MRF6S9045MR1 MRF6S9045MBR1NOTESMRF6S9045NR1 MRF6S9045NBR1 MRF6S9045MR1 MRF6S9045MBR113RF Device DataFreescale SemiconductorNOTES14RF Device DataFreescale SemiconductorMRF6S9045NR1 MRF6S9045NBR1 MRF6S9045MR1 MRF6S9045MBR1PACKAGE DIMENSIONSTO-270-2PLASTICCASE 1265-08ISSUE HMRF6S9045NR1(MR1)MRF6S9045NR1 MRF6S9045NBR1 MRF6S9045MR1 MRF6S9045MBR115RF Device DataFreescale SemiconductorCASE 1337-03ISSUE C AREA OF THE HEAT SLUG.DIM A MIN MAX MIN MAX MILLIMETERS .100.104 2.54 2.64INCHES A1.039.0430.99 1.09A2.040.042 1.02 1.07D .928.93223.5723.67D1E .438.44211.1211.23E1.248.252 6.30 6.40F b1.193c1.007.011.18r1.063.0681.60aaa1.810 BSC .00420.57 BSC .10STYLE 1:PIN 1.DRAIN2.GATE3.SOURCE.025 BSC .281.73.199 4.900.64 BSC5.05E2.241.2456.12 6.22TO-272-2PLASTICMRF6S9045NBR1(MBR1)Information in this document is provided solely to enable system and softwareimplementers to use Freescale Semiconductor products. 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