k4s641632

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浪潮天梭K1产品介绍

自动故障隔离
− 模块级/硬件分区级故障隔离 − 操作系统内核资源隔离与核心重构
− 应用级隔离
现场和远程的监控、管理和操作手段，操作便捷，提高用户的管理和运维效率，保障业务连续性，全中文、图形化配置，良好人机互动，提升管理效率
技术特性——灵活的硬件分区
简单菜单操作实现物理分区，每个分区有各自独立的硬件资源，可实现分区间HA ，每个分区可安装各自独立的应用物理分区是完全的硬件隔离，每个分区分
操作系统安全分级
商用操作系统－进口
用户和数据的分离追踪登录 &审计
安全操作系统－贸易壁垒
数据级别可信赖的安全功能的分离设备级别防伪造 NTCB
最小保护
D
任意的信息保护
C1
Single Level Security
控制的访问保护
C2
层次化的信息保护
B1
结构化的保护
B2
Multilevel Security
中国操作系统发展道路中的里程碑
国内唯一通过Unix03标准认证的操作系统
国内唯一通过国家信息系统安全等级
保护三级认证的Unix系统
所有通过 UNIX 标准认证的操作系统列表 IBM HP Oracle Apple 浪潮 IBM AIX 5L/6 HP-UX 11i Oracle Solaris 10/11 FCS Mac OS X 10.8 Inspur K-UX 2.0
安全领域
B3
验证的信息保护
A1
任意及强策略强化审计追踪要求事项强力的系统结构系统结构要求事项的强化要求事项非定型验证 (低) 安全性 (高) Descriptive Formal Top-Level Specification 定型的安全模块验证强化入侵测试强化形象管理强化安全隧道安全的发布

K4S560832D-TC7C资料

Burst mode operation Auto & self refresh capability (8192 Cycles/64ms) LVTTL compatible inputs and outputs Single 3.3V ± 0.3V power supply MRS cycle with address key programs Latency (Access from column address) Burst length (1, 2, 4, 8 & Full page) Data scramble (Sequential & Interleave) • All inputs are sampled at the positive going edge of the system clock • Serial presence detect with EEPROM • PCB : Height (1,375mil), single sided component
元器件交易网
M366S3253DTS
M366S3253DTS SDRAM DIMM
PC1M DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION
REV. 0.0 Jan. 2002
元器件交易网
M366S3253DTS
PIN CONFIGURATION DESCRIPTION
Pin CLK CS Name System clock Chip select
PC133/PC100 Unbuffered DIMM
Input Function Active on the positive going edge to sample all inputs. Disables or enables device operation by masking or enabling all inputs except CLK, CKE and DQM Masks system clock to freeze operation from the next clock cycle. CKE should be enabled at least one cycle prior to new command. Disable input buffers for power down in standby. CKE should be enabled 1CLK+tSS prior to valid command. Row/column addresses are multiplexed on the same pins. Row address : RA0 ~ RA12, Column address : CA0 ~ CA9 Selects bank to be activated during row address latch time. Selects bank for read/write during column address latch time. Latches row addresses on the positive going edge of the CLK with RAS low. Enables row access & precharge. Latches column addresses on the positive going edge of the CLK with CAS low. Enables column access. Enables write operation and row precharge. Latches data in starting from CAS, WE active. Makes data output Hi-Z, tSHZ after the clock and masks the output. Blocks data input when DQM active. (Byte masking) Data inputs/outputs are multiplexed on the same pins. Power and ground for the input buffers and the core logic.

Intellian K4 K6 手册说明书

CONTENTSINTRODUCTION (1)I NTRODUCTION TO I NTELLIAN K4/K6 (1)F EATURES OF I NTELLIAN K4/K6 (2)B ASIC S YSTEM C ONFIGURATION (3)INSTALLATION (4)S YSTEM C OMPONENTS (4)T OOLS R EQUIRED FOR I NSTALLATION (7)P LANNING THE INSTALLATION (8)INSTALLING THE DACU (15)C ONNECTING THE SYSTEM TO A GPS (20)T ARGET S ATELLITE S ETTING (21)OPERATION INSTRUCTION (22)I NTRODUCTION (22)OPERATION USING THE DACU (23)DACU S OFT K EYS (23)N ORMAL M ODE (23)S ET U P M ODE (28)OPERATION USING PC CONTROLLER PROGRAM (51)I NTRODUCTION (51)I NSTALLATION USB TO S ERIAL D RIVER (52)P ROGRAM I NITIALING AND S ERIAL P ORT S ETUP (54)M AIN M ENU –U SING D EFAULT T RI S AT M ODE (55)S ET S ATELLITE I NFORMATION (56)C ONTROLLER MENU (59)TROUBLESHOOTING (64)PREPARATION FOR TRANSPORTATION (66)WARRANTY (67)APPENDIX: K6 TECHNICAL SPECIFICATION (68)APPENDIX: K4 TECHNICAL SPECIFICATION (69)INTRODUCTIONIntroduction to Intellian K4/K6Intellian K4/K6 is the world’s first marine in-motion satellite TV antenna system that is compatible with the Ka-band broadcasts from DIRECTV’s satellites, called 99˚W and 103˚W (the position related to Earth is expressed in longitude degrees). These satellites are now carrying the majority of DirecTV’s HD programming.This powerful and innovative design of the Intellian K4/K6 incorporates a plug-and-play system to control and support the Ku-band and Ka-band dual antenna system, which allows the users to enjoy both DIRECTV HD channels and standard channels at the same time. The Intellian automatic and fully-integrated dual antenna system offers users not only the simplest installation but also the most comfortable entertainment environment. As if at home, all a user needs to do is just switch the channel buttons on the TV remote control. Then, Intellian’s dual antenna system will automatically recognize where the selected channel is located between Ku and Ka-band and change the satellite if necessary.In addition, the Intellian K4/K6 19-inch rack-mount Dual Antenna Control Unit (DACU) allows for a hassle-free installation with its standard 8 receiver connector ports. This means that up to 8 receivers can be connected to the ACU from different locations on the vessel without additional multi-switches and wiring. Not to mention the Ku-band HD module and Multi-satellite Interface Module (MIM) are both embedded in the DACU which enables users to switch channels freely and simultaneously amongst DIRECTV’s 5 satellites; 2 for Ka-band (99˚W and 103˚W) and 3 for Ku-band (101˚W, 110˚W, and 119˚W) Features of Intellian K4/K6Full HD (High-Definition) Channel AvailabilityDIRECTV Ka-band signal reception for 99˚W and 103˚W satellites which are currently broadcasting more than 130 national HD channels.Dual Antenna SystemEnjoy watching channels from DIRECTV Ku-band satellites (101˚W, 110˚W, and 119˚W) and Ka-band satellites (99˚W and 103˚W) simultaneously just like a home system, using Intellian’s exclusive dual antenna system.Wide Range Search (WRS) AlgorithmSince the Ka-band signal has a very narrow beam width, the searching time can be extended if the antenna system is using the conventional searching method to search only the main lobe. Intellian’s patent-pending technology, WRS, can ultilize the side lobe of the Ka-band signal and jump onto the main lobe directly which will shorten the searching time significantly.Dynamic Beam Tilting (DBT) TechnologyAn advanced tracking technology is required for tracking the very narrow beam-width of the Ka-band signal. The DBT patent-pending technology allows the K4/K6 to have the most relibable and accurate tracking capability while the vessel is cruising at high speed or in rough sea conditions.New Rack-Mount Dual Antenna Control Unit (DACU)DACU controls dual antenna systems at one time, switches channels freely amongst DIRECTV’s 5 satellites using TV remote control and includes built-in HD and MIM modules. Easily connects up to 8 receivers directly from different rooms without any extra multi-switches and wiring to the DACU’s built-in 8 receiver connectors.NMEA 0183 GPS InterfaceA GPS Interface supports an external GPS which can provide the K4/K6even higher performance.K4/K6 (DTV 99W, 103W)Tapping Flat Head Sem’sFrontRearPower Drill Cross-HeadΦ10mm Drill Φ80mmPencil5mmAntenna Unit15°ObstacleAny obstacles located above a 15degree elevation can prevent theantenna from tracking the satelliteØ70cm (27.5”) Intellian K6Ø50cm (19.7”) Intellian K4WARNING Intellian K6 30.37cm (12”)Ø10mm Drillø80mm Hole sawWARNINGRF1 CableAntenna Unit11mm SpannerRF2 Cable Power CableDo not use excessive force when using the spanner, this will damage the WARNING26.58cm (10.5”) 13cm (5.1”)48.43cm (19”)46.5cm (18.3”)3.18cm (1.3”)(a) Table Mount Type(b) 19” Rack Mount Typeantenna. Refer the drawing below to connect cables.It will cause a critical malfunction if you do not follow the system diagram toCable(Black)Cable(White) K4/K6i4/i6B-Band ConverterWARNINGIntellian K4/K6•Connect the RF1 Cable (Yellow/15m) from the RF 1 connector on the antenna to the RF1 connector at Ka-band Antenna In section on the rear of DACU.•Connect the RF2 Cable (Green/15m) from the RF 2 connector on the antenna to the RF2 connector at Ka-band Antenna In section on the rear of DACU.•Connect the Power Cable (Red/15m) from the Power connector on the antenna to the Power/Data connector at Ka-band Antenna In section on the rear of DACU.Intellian i4/i6•Connect the RF1 Cable (Black/15m) from the RF 1 connector on the antenna to the RF1 connector at Ku-band Antenna In section on the rear of DACU. •Connect the RF2 Cable (White/15m) from the RF 2 connector on the antenna to the RF2 connector at Ku-band Antenna In section on the rear of DACU.Receivers•Connect the B-Band Converter (not supplied) to the RF connector on the rear of the receiver.• Connect the DACU-IRD Cable (3m) from the RF1 connector at To Receiver Section on the rear of the DACU to RF connector on the B-Band Converter. •Connect USB-cable (1.8m) from the USB1 connector at To Receiver Section on the rear of the DACU to the USB connector on the receiver.• Connect the AC power cable (1.5m) from AC power connector on the rear of DACU to a power source from 90~ 260 V AC.•Press the POWER ON switch on the rear of the DACU to start the operation of the antenna system automatically. Connecting the system to a GPSFor improved satellite tracking, you can connect your satellite TV system directly to your boat’s NMEA 0183 GPS system. To do this you will need lengths of cable suitable for connecting to your GPS system and the green 2-way DACU GPS connector supplied with your Intellian K4/K6 Satellite TV System.To connect the system to a GPS1. Strip back the insulation of each cable and connect a cable to eachterminal of the 2-way connector.2. Tighten the locking screws.3. Connect the cable from the +ve (positive)terminal of the DACUGPS connector to the NMEA OUT wire of the boat’s GPS system.4. Connect the cable from the –ve (negative) terminal of the DACUGPS connector to the ground wire of the boat’s GPS system.5. Refit the DACU GPS connector to the rear of the DACU.Ground (-)NMEA out (+)DTV119SAT A : DTV101 SAT B : DTV119 SAT A* : DTV101 SAT B* : DTV119SAVE ?YES NEXTSAT NAME : DTV101NEXTx2EDIT SAT INFO ?SAT NAME : DTV101INPUT +SAT NAME : DTV101 4. Set the satellite name.HOR LOW 12523 21096 HOR LOW NID 0x0003VER HIGH 12598 21096 VER HIGH NID 0x0003INPUT +VER LOW NID 0x0003HOR HIGH 12523 21096SAVE ?VERIFY : DVB DECODE VOLTAGE: DISEQC: ONLY 22KHZ PARAM: SCAN OFFYES NEXTx3SET ANT PARAMETER?WRS LEVEL : 0500SATNAME : DTV101SAVE ? 5. Input the WRS LEVEL.x4SET SAT PAIR ?x4x14. Input the longitude data.LONGITUDE ###.## ELONGITUDE ###.## EINPUT +SAVE ?SET SAT PAIR ?SAVE ?x5DO NOT USE DISEQCNEXT 4. Select the DiSEqC MethodSET SAT PAIR ?x6SF-601SSET SAT PAIR ?x7 ACU POWER : 27.1 VSET SAT PAIR ?x8 SET REMOCON ? FUNC : CHANGE SATPRESS A REMOTE KEY FUNC :NEXTx10 x9x11X12X13X142. Press “NEXT” or “YES” button to complete the installation.3. Execute the GUI Program in the same supplied CD-ROM to start the operation. (Refer to p.51)Tracking Satellite: DTV 99 ,DTV103Connects a PC with Ku (i4/i6) USB Interface:Tracking Satellite: DTV 101 ,DTV110, DTV119The operation method is exactly same for both K4/K6 and i4/i6. The below WARNINGSerial port settingConnect/Disconnect ButtonCommunication status displayBaudrate settingCommand Button• Baud Rate Setting – To display communication speed.• Connection Status Display – To display communication port betweenAntenna Status Monitoring• Search – Antenna is searching for the selected satellite. ◆ ♦•Satellite InformationThe name, longitude and confirmation method of the satellite isdisplayed when a satellite is selected in the list box. Push “EditSatellite Information” button to update the information on modifying the value.•DiSEqCCommand Button• Edit Satellite Information – To modify the satellite information. • Register for Sat A – To register a satellite to satellite A. • Register for Sat B – To register a satellite to satellite B. • Register for Sat C – To register a satellite to satellite C. • Not Use – Do not use DiSEqC.• Change Band – To use DiSEqC to change band.• Change Satellite – To use DiSEqC to change the satellite. • Singe Band – Antenna in use of Single LNB. • Universal Band – Antenna in use of universal LNB. • Set Local Frequency – To select local frequency of LNB.Load and Update Default Command Button1) Load Default: Click “load default” button to select *.rif file accordingto your region.2) Update Default: Click “Update default” button to open update default Dialogue. Click “yes” button to update the system.3) Click “confirm / yes” button to complete the update.Command Buttons• Load GPS Files – Reads in various city information from theGPS files.• Add City – Adds the name of city and its GPS information toGPS files•Delete City – Deletes the name of city and its GPS information Command Button• Edit Satellite Information – Toof the antenna•Satellite Information – Satellite information consists ofCommand Button•Edit Satellite Information – To change frequency information of the antenna. • Angle of AntennaTwo kinds of antenna movement is available. One is to move to the target position and the other is to move by certain amount of angle. The current position(angle) of the antenna is displayed as “Current” and to move to the target position, push “Go to target Position” button after keying in desired angle into “Target”. To move to a certain amount of angle only, move antenna to direction of up or down, and CW or CCW by using buttons after keying in the desired angle into the AZ and EL in the “Mover Step” box. Rotate LNB to direct theCommand ButtonsSet Control Parameter–To register parameters values.Set Flags–To set flag setting for WRS Method or Offset Difference.Product Information –Antenna dish size. Serial NO, Voltage for antenna and ACU,。

k3s k8s 技术参数

k3s k8s 技术参数
K3s和K8s都是用于容器编排和管理的开源技术，分别是轻量
级Kubernetes和Kubernetes的简称。

它们的技术参数涉及多个方面，包括架构、性能、安全性、易用性等。

首先，从架构角度看，K3s是一个轻量级的Kubernetes发行版，它的设计目标是尽可能简化Kubernetes的安装和维护。

相比之下，
K8s是一个功能强大的容器编排系统，具有高度可扩展性和灵活性，但安装和维护相对复杂一些。

其次，性能方面，K3s在一些小型设备上表现更好，因为它更
轻量级，占用资源较少，启动速度更快。

而K8s在大规模集群中表
现更佳，因为它能够更好地处理复杂的容器编排和调度任务。

在安全性方面，K3s和K8s都提供了丰富的安全特性，如RBAC （基于角色的访问控制）、网络策略、认证和加密等，保障集群的
安全运行。

另外，从易用性来看，K3s相对于K8s更容易安装和部署，适
合于边缘计算和IoT等场景，而K8s则更适合于大规模生产环境，
因为它提供了更多的定制和扩展能力。

总的来说，K3s和K8s都是优秀的容器编排和管理技期，选择哪个取决于具体的使用场景和需求。

希望以上回答能够满足你的要求。

KOIOS K3419UG 说明书

KOIOS使用指南Monitor User Manual请妥善保管本使用说明书。

使用产品前请仔细阅读本使用说明书。

K3419UGK O IO S使用本产品前请您认真阅读如下安全索引内容并按之操作，否则可能给您的人身或财产安全带来损害。

目录显示器的摆放注意事项特殊注意事项包装清单显示器装配壁挂及悬臂壁挂及悬臂的螺丝要求视角调节电源开关及LED 指示灯显示器接口各接口位置接口说明外置菜单按键菜单说明快速设置画面设置颜色设置通用设置通用设置附页使用本产品的正确姿势简单问题处理指南其他常见问题附录接头定义合格证及保修卡123456678999101111121314151617181920显示器摆放请确保在产品周围留有足够的通风空间。

内部温度上升可能引起火灾并损坏产品。

安装产品时，请确保产品周围至少留有如下所示的空间。

!警告△ 本机不应遭受水滴或水溅，且不应该在本机附近放置诸如花瓶一类的装有液体的物品，或在本产品周围使用加湿器或炉具。

请远离水源。

△ 远离辐射体及热源△ 在后壳有预留的开孔是通风用的。

为保证显示器持续操作而不过热，这些散热孔不能被堵塞或覆盖。

△ 不要把显示器放置于不稳的位置，如车子、椅子等地方，若不小心落下，可能会伤害到使用者，并可能导致设备的损伤。

△ 若把显示器固定于墙上或架子上，需得到厂商承认并严格按照程序安装。

: 使用本产品前请您认真阅读如下安全索引内容并按之操作，否则可能给您的人身或财产安全带来损害。

!1、请使用该机型专用电源适配器。

2、长时间使用本产品时，显示屏会变热，请勿触摸显示屏。

3、请将小附件放在儿童触摸不到的地方。

4、为保证安全的工作，请确保电源电压为200~240V ，电流至少为2A; 并且不能让插座过载，否则会引起火灾或电击。

5、当显示器长期不使用时，请切断电源。

这样做能防止在雷雨天受到电击以及异常电源电压的损伤。

6、妥善安装本机，万一发生任何故障时，请确保可以立即将交流电源线从墙壁插座上拔下。

EPM240T100C5(C代表商业级I代表工业级型号分为3号和5号)

艾米电子EPM240T100C5 CPLD开发板用户手册v1.0 6.7，2010淘宝：QQ（邮箱）：amy-studio@序：艾米电子工作室成立于2009年。

经过1年多的运作，网站和论坛初具规模，得益于广大网友的支持与帮助，这里对支持艾米电子的热心网友表示感谢！艾米电子FPGA系列开发板自面市以来，一直得到广大网友的喜爱。

EP2C8Q208-FPGA/NIOS开发板09年热销1000多套，其中有几所高校定购了几十套作为实验室使用。

2010年艾米电子将延续09年的良好业绩，更好的发展，为客户提供更完善的开发板、开发模块以及资料。

2010年计划推出和完善如下产品：EPM240T100C5入门型CPLD开发板EP2C5T144-FPGA初级FPGA开发板EP2C8Q208-FPGA/NIOS高级FPGA开发板同时完善接口板以及外围接口模块，届时将会推出各种处理器的空板PCB。

敬请各位网友关注！艾米电子EPM240-CPLD开发板用户手册网站：目录序： (2)一、简介 (1)二、核心板照片及资源描述 (3)2.1EPM240T100C5芯片资源描述 (3)2.2照片及引脚分配 (4)2.3功能描述 (6)2.4硬件电路详解 (8)1.EPM240FPGA四个bank (8)3.板载led及I2C存储器接口 (8)6.时钟及复位部分电路 (9)7.电源部分电路 (9)四、注意事项 (15)4.1电源 (15)4.2JTAG拔插方法 (15)4.3软件说明 (15)4.4管脚复用 (16)五、测试开发板 (17)5.1JTAG测试 (17)5.2ASP测试 (17)一、简介EPM240-FPGA开发板（以下简称EPM240开发板）采用Altera公司推出的CYCLONE II系列芯片EPM240Q240C8芯片作为核心处理器进行设计，CYCLONE II系列芯片可以说是目前市场上性价比最高的芯片，比第一代的EP1C6或者EP1C12等芯片设计上、内部的艾米电子EPM240-CPLD开发板用户手册QQ（邮箱）：amystudio@逻辑资源上都有很大的改进，同时价格也可以被广大客户接受；虽然Altera推出了CYCLONE III甚至于IV代的芯片，但是目前市场上价格走势偏高，尤其是针对广大初学者的定位，目前还不是适合采用。

SAMSUNG K4S64163LH - R(B)E N G C L F 数据手册

现货库存、技术资料、百科信息、热点资讯，精彩尽在鼎好!K4S64163LH - R(B)E/N/G/C/L/FMobile-SDRAM• 2.5V power supply.• LVCMOS compatible with multiplexed address.• Four banks operation.• MRS cycle with address key programs. -. CAS latency (1, 2 & 3).-. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).• EMRS cycle with address key programs.• All inputs are sampled at the positive going edge of the system clock.• Burst read single-bit write operation.• Special Function Support.-. PASR (Partial Array Self Refresh).-. Internal TCSR (Temperature Compensated Self Refresh)• DQM for masking.• Auto refresh.• 64ms refresh period (4K cycle).• Commercial Temperature Operation (-25°C ~ 70°C).• Extended Temperature Operation (-25°C ~ 85°C).• 54Balls FBGA with 0.8mm ball pitch ( -RXXX : Leaded, -BXXX : Lead Free).FEATURESThe K4S64163LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits,fabricated with SAMSUNG’s high performance CMOS technol-ogy. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high per-formance memory system applications.GENERAL DESCRIPTIONORDERING INFORMATION- R(B)E/N/G : Normal / Low / Low Power, Extended Temperature(-25°C ~ 85°C)- R(B)C/L/F : Normal / Low / Low Power, Commercial Temperature(-25°C ~ 70°C)NOTES :1. In case of 40MHz Frequency, CL1 can be supported.2. Samsung are not designed or manufactured for use in a device or system that is used under circumstance in which human life is potentially at stake. Please contact to the memory marketing team in samsung electronics when considering the use of a product contained herein for any specific purpose, such as medical, aerospace, nuclear, military, vehicular or undersea repeater use.Part No.Max Freq.InterfacePackageK4S64163LH-R(B)E/N/G/C/L/F75133MHz(CL=3)LVCMOS54 FBGA Leaded(Lead Free)K4S64163LH-R(B)E/N/G/C/L/F1H 105MHz(CL=2)K4S64163LH-R(B)E/N/G/C/L/F1L105MHz(CL=3)*11M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAFUNCTIONAL BLOCK DIAGRAM54Ball(6x9) FBGA 123789A VSS DQ15VSSQ VDDQ DQ0VDD B DQ14DQ13VDDQ VSSQ DQ2DQ1C DQ12DQ11VSSQ VDDQ DQ4DQ3D DQ10DQ9VDDQ VSSQ DQ6DQ5E DQ8NC VSS VDD LDQM DQ7F UDQM CLK CKE CAS RAS WE G NC A11A9BA0BA1CS H A8A7A6A0A1A10JVSSA5A4A3A2VDDPin NamePin Function CLK System Clock CS Chip Select CKE Clock Enable A 0 ~ A 11Address BA 0 ~ BA 1Bank Select Address RAS Row Address Strobe CAS Column Address StrobeWE Write Enable L(U)DQM Data Input/Output Mask DQ 0 ~ 15Data Input/Output V DD /V SS Power Supply/Ground V DDQ /V SSQData Output Power/GroundSymbol Min Typ Max A 0.800.90 1.00A 10.270.320.37E -8.00-E 1- 6.40-D -8.00-D 1- 6.40-e -0.80-b 0.400.450.50z--0.10[Unit:mm]Package Dimension and Pin Configuration< Top View *2 >< Bottom View *1 >< Top View *2 >*2: Top View521634897F E D CB JH G A eD D/2D 1E 1EE/2A A1zb*1: Bottom View #A1 Ball Origin IndicatorK4S64163LHSEC Week XXXXDC OPERATING CONDITIONSCAPACITANCE (V DD = 2.5V, T A = 23°C, f = 1MHz, V REF =0.9V ± 50 mV)PinSymbol Min Max Unit NoteClockC CLK 2.0 4.0pF RAS, CAS, WE, CS, CKE, DQM C IN 2.0 4.0pF Address C ADD 2.0 4.0pF DQ 0 ~ DQ 15C OUT3.56.0pFABSOLUTE MAXIMUM RATINGSNOTES:Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.Functional operation should be restricted to recommended operating condition.Exposure to higher than recommended voltage for extended periods of time could affect device reliability.ParameterSymbol Value Unit Voltage on any pin relative to V ss V IN , V OUT -1.0 ~ 3.6V Voltage on V DD supply relative to V ss V DD , V DDQ-1.0 ~ 3.6V Storage temperature T STG -55 ~ +150°C Power dissipation P D 1.0W Short circuit currentI OS50mARecommended operating conditions (Voltage referenced to V SS = 0V, T A = -25 to 85°C for Extended, -25 to 70°C for Commercial) NOTES :1. Samsung can support VDDQ2.5V(in general case) and 1.8V(in specific case) for VDD 2.5V products.Please contact to the memory marketing team in Samsung Electronics when considering the use of VDDQ 1.8V(Min 1.65V).2. VIH (max) = 3.0V AC.The overshoot voltage duration is ≤ 3ns.3. VIL (min) = -1.0V AC. The undershoot voltage duration is ≤ 3ns.4. Any input 0V ≤ VIN ≤ VDDQ.Input leakage currents include Hi-Z output leakage for all bi-directional buffers with tri-state outputs.5. Dout is disabled, 0V ≤ VOUT ≤ VDDQ.ParameterSymbol Min Typ Max Unit NoteSupply voltageV DD2.3 2.5 2.7V V DDQ 2.3 2.5 2.7V 1.65- 2.7V 1Input logic high voltage V IH 0.8 x V DDQ-V DDQ + 0.3V 2Input logic low voltage V IL -0.300.3V 3Output logic high voltage V OH V DDQ -0.2--V I OH = -0.1mA Output logic low voltage V OL --0.2V I OL = 0.1mAInput leakage currentI LI-10-10uA4DC CHARACTERISTICSRecommended operating conditions (Voltage referenced to V SS = 0V, T A = -25 to 85°C for Extended, -25 to 70°C for Commercial)NOTES:1. Measured with outputs open.2. Refresh period is 64ms.3. Internal TCSR can be supported.In commercial Temp : Max 40°C/Max 70°C, In extended Temp : Max 40°C/Max 85°C 4. K4S64163LH-R(B)E/C**5. K4S64163LH-R(B)N/L**6. K4S64163LH-R(B)G/F**7. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ).ParameterSymbolTest ConditionVersion UnitNote-75-1H -1L Operating Current (One Bank Active)I CC1Burst length = 1t RC ≥ t RC (min) I O = 0 mA505045mA1Precharge Standby Current in power-down modeI CC2P CKE ≤ V IL (max), t CC = 10ns0.5mAI CC2PS CKE & CLK ≤ V IL (max), t CC = ∞0.5 Precharge Standby Current in non power-down modeI CC2NCKE ≥ V IH (min), CS ≥ V IH (min), t CC = 10nsInput signals are changed one time during 20ns10mAI CC2NSCKE ≥ V IH (min), CLK ≤ V IL (max), t CC = ∞Input signals are stable 7 Active Standby Current in power-down modeI CC3PCKE ≤ V IL (max), t CC = 10ns5mAI CC3PS CKE & CLK ≤ V IL (max), t CC = ∞5 Active Standby Current in non power-down mode (One Bank Active)I CC3N CKE ≥ V IH (min), CS ≥ V IH (min), t CC = 10nsInput signals are changed one time during 20ns 20mA I CC3NSCKE ≥ V IH (min), CLK ≤ V IL (max), t CC = ∞Input signals are stable20mAOperating Current (Burst Mode)I CC 4I O = 0 mAPage burst4Banks Activated t CCD = 2CLKs 806565mA1Refresh Current I CC 5t RC ≥ t RC (min)115110100mA 2 Self Refresh CurrentI CC 6CKE ≤ 0.2V-E/C 500uA 4-N/L3005-G/FInternal TCSR Max 40Max 85/70°C3Full Array 185300uA 61/2 of Full Array 1602401/4 of Full Array145220VDDQ500Ω500ΩOutput30pFVOH (DC) = VDDQ - 0.2V, IOH = -0.1mA VOL (DC) = 0.2V, IOL = 0.1mA Vtt=0.5 x VDDQ50ΩOutput30pFZ0=50ΩFigure 2. AC Output Load CircuitFigure 1. DC Output Load CircuitAC OPERATING TEST CONDITIONS (V DD = 2.5V ± 0.2V, T A = -25 to 85°C for Extended, -25 to 70°C for Commercial)Parameter Value Unit AC input levels (Vih/Vil)0.9 x V DDQ / 0.2V Input timing measurement reference level 0.5 x V DDQ V Input rise and fall timetr/tf = 1/1ns Output timing measurement reference level 0.5 x V DDQ VOutput load conditionSee Figure 2OPERATING AC PARAMETER(AC operating conditions unless otherwise noted)NOTES:1. The minimum number of clock cycles is determined by dividing the minimum time required with clock cycle time and then rounding off to the next higher integer.2. Minimum delay is required to complete write.3. Minimum tRDL=2CLK and tDAL(= tRDL + tRP) is required to complete both of last data write command(tRDL) and precharge command(tRP).4. All parts allow every cycle column address change.5. In case of row precharge interrupt, auto precharge and read burst stop.ParameterSymbolVersion Unit Note -75-1H -1L Row active to row active delay t RRD (min)151919ns 1RAS to CAS delay t RCD (min)191924ns 1Row precharge time t RP (min)191924ns 1Row active time t RAS (min)455060ns 1t RAS (max)100us Row cycle timet RC (min)646984ns 1Last data in to row precharge t RDL (min)2CLK 2Last data in to Active delayt DAL (min)tRDL + tRP-3Last data in to new col. address delay t CDL (min)1CLK 2Last data in to burst stopt BDL (min)1CLK 2Col. address to col. address delay t CCD (min)1CLK4Number of valid output data CAS latency=32ea 5Number of valid output data CAS latency=21Number of valid output dataCAS latency=1AC CHARACTERISTICS (AC operating conditions unless otherwise noted)NOTES :1. Parameters depend on programmed CAS latency.2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.3. Assumed input rise and fall time (tr & tf) = 1ns.If tr & tf is longer than 1ns, transient time compensation should be considered, i.e., [(tr + tf)/2-1]ns should be added to the parameter.ParameterSymbol-75-1H-1L Unit NoteMinMaxMin MaxMin MaxCLK cycle time CAS latency=3t CC 7.510009.510009.51000ns1CLK cycle time CAS latency=2t CC 9.59.512CLK cycle timeCAS latency=1t CC --25CLK to valid output delay CAS latency=3t SAC 5.477ns1,2CLK to valid output delay CAS latency=2t SAC 778CLK to valid output delay CAS latency=1t SAC --20Output data hold time CAS latency=3t OH 2.5 2.5 2.5ns2Output data hold time CAS latency=2t OH 2.5 2.5 2.5Output data hold time CAS latency=1t OH -- 2.5CLK high pulse width t CH 2.5 3.0 3.0ns 3CLK low pulse width t CL 2.5 3.0 3.0ns 3Input setup time t SS 2.0 2.5 2.5ns 3Input hold time t SH 1.0 1.5 1.5ns 3CLK to output in Low-Zt SLZ111ns2CLK to output in Hi-ZCAS latency=3t SHZ5.477ns CAS latency=2778CAS latency=1--20SIMPLIFIED TRUTH TABLE(V=Valid, X=Don ′t Care, H=Logic High, L=Logic Low)NOTES :1. OP Code : Operand CodeA0 ~ A11 & BA0 ~ BA1 : Program keys. (@MRS)2. MRS can be issued only at all banks precharge state.A new command can be issued after 2 CLK cycles of MRS.3. Auto refresh functions are the same as CBR refresh of DRAM.The automatical precharge without row precharge command is meant by "Auto". Auto/self refresh can be issued only at all banks precharge state.Partial self refresh can be issued only after setting partial self refresh mode of EMRS. 4. BA0 ~ BA1 : Bank select addresses.5. During burst read or write with auto precharge, new read/write command can not be issued. Another bank read/write command can be issued after the end of burst.New row active of the associated bank can be issued at tRP after the end of burst.6. Burst stop command is valid at every burst length.7. DQM sampled at the positive going edge of CLK masks the data-in at that same CLK in write operation (Write DQM latency is 0), but in read operation, it makes the data-out Hi-Z state after 2 CLK cycles. (Read DQM latency is 2).COMMANDCKEn-1CKEn CS RAS CAS WE DQM BA0,1A10/AP A11,A9 ~ A0Note RegisterMode Register Set H X L L L L X OP CODE1, 2RefreshAuto RefreshHH L L L H XX3Self RefreshEntryL 3ExitL H L H H H X X3H X X X 3Bank Active & Row Addr.H X L L H H X V Row Address Read &Column AddressAuto Precharge Disable HXLHLHXVL Column Address (A0~A7)4Auto Precharge Enable H 4, 5Write &Column AddressAuto Precharge Disable H X L H L L X VL Column Address (A0~A7)4Auto Precharge Enable H 4, 5Burst Stop H X L H H L X X6PrechargeBank Selection HXL L H L XV L X All BanksXHClock Suspend or Active Power DownEntry H L H X X X X XL V V V Exit L H X X X X X Precharge Power Down ModeEntryHLH X X X XXL H H H ExitL HH X X X X LV VVDQMH XVX 7No Operation CommandHXH X X X XXLHHHRegister Programmed with Extended MRS Address BA1BA0A11 ~ A10/APA9A8A7A6A5A4A3A2A1A0FunctionMode SelectRFU *1DSRFU *1PASRNormal MRS ModeTest ModeCAS Latency Burst TypeBurst Length A8A7TypeA6A5A4Latency A3Type A2A1A0BT=0BT=100Mode Register Set000Reserved0Sequential 0001101Reserved 00111Interleave 0012210Reserved 0102Mode Select 0104411Reserved0113BA1BA0Mode01188Write Burst Length 100Reserved 0Setting for Nor-mal MRS100Reserved Reserved A9Length 101Reserved 101Reserved Reserved 0Burst 110Reserved 110Reserved Reserved 1Single Bit111Reserved111Full PageReservedFull Page Length x16 : 64Mb(256)Register Programmed with Normal MRS Address BA0 ~ BA1A11 ~ A10/APA9*2A8A7A6A5A4A3A2A1A0Function"0" Setting for Normal MRSRFU *1W.B.LTest Mode CAS LatencyBTBurst LengthA. MODE REGISTER FIELD TABLE TO PROGRAM MODESNOTES:1.RFU(Reserved for future use) should stay "0" during MRS cycle.2.If A9 is high during MRS cycle, "Burst Read Single Bit Write" function will be enabled.Mode SelectDriver Strength PASRBA1BA0Mode A6A5Driver StrengthA2A1A0Size of Refreshed Array00Normal MRS 00Full 000Full Array 01Reserved011/20011/2 of Full Array 10EMRS for Mobile SDRAM10Reserved 0101/4 of Full Array 11Reserved11Reserved011Reserved Reserved Address100Reserved A11~A10/APA9A8A7A4A3101Reserved 0110Reserved 111ReservedEMRS for PASR(Partial Array Self Ref.) & DS(Driver Strength)1. In order to save power consumption, Mobile SDRAM has PASR option.2. Mobile SDRAM supports 3 kinds of PASR in self refresh mode :Full Array, 1/2 of Full Array and 1/4 of Full Array.Partial Self Refresh Area1. Apply power and attempt to maintain CKE at a high state and all other inputs may be undefined. - Apply VDD before or at the same time as VDDQ.2. Maintain stable power, stable clock and NOP input condition for a minimum of 200us.3. Issue precharge commands for all banks of the devices.4. Issue 2 or more auto-refresh commands.5. Issue a mode register set command to initialize the mode register.6. Issue a extended mode register set command to define DS or PASR operating type of the device after normal MRS.EMRS cycle is not mandatory and the EMRS command needs to be issued only when DS or PASR is used.The default state without EMRS command issued is full driver strength and full array refreshed.The device is now ready for the operation selected by EMRS.For operating with DS or PASR , set DS or PASR mode in EMRS setting stage.In order to adjust another mode in the state of DS or PASR mode, additional EMRS set is required but power up sequence is not needed again at this time. In that case, all banks have to be in idle state prior to adjusting EMRS set.Partial Array Self RefreshB. POWER UP SEQUENCEInternal Temperature Compensated Self Refresh (TCSR)1. In order to save power consumption, Mobile-DRAM includes the internal temperature sensor and control units to control the self refresh cycle automatically according to the two temperature range : Max 40 °C and Max 85 °C(for Extended), Max 70 °C(for Commercial).2. If the EMRS for external TCSR is issued by the controller, this EMRS code for TCSR is ignored.Temperature RangeSelf Refresh Current (Icc6)Unit- E/C- N/L- G/FFull Array1/2 of Full Array1/4 of Full ArrayMax 85/70 °C 500300300240220uAMax 40 °C185160145- Full Array - 1/2 Array- 1/4 ArrayC. BURST SEQUENCE1. BURST LENGTH = 4Initial AddressSequential Interleave A1A00001230123011230103210230123011130123210 2. BURST LENGTH = 8Initial AddressSequential Interleave A2A1A000001234567012345670011234567010325476010234567012301674501134567012321076541004567012345670123101567012345476103211067012345674523011117012345676543210。

JD44B0X V2.2使用手册

JD44B0X 开发板使用手册第一章JD44B0X 开发套件的组成 (4)1.1开发套件所提供的硬件详细清单 (4)1.2开发套件所提供的软件详细清单 (4)1.3板上接口和资源清单 (5)1.4.板上硬件资源分配列表 (6)1.5.板上接口和指示灯功能说 (7)第二章系统硬件描述 (8)2.1.电源电路 (8)2.2复位电路 (8)2.3CPU单元 (9)2.4SDRAM电路 (10)2.5N OR F LASH (11)2.6.N AND F LASH (12)2.7.ZLG7289数码管和键盘扩展电路 (13)2.8.RTL8019网络接口电路 (14)BHOST（SL811HST）接口电路 (14)BDEVICE（PDIUSBD12）接口电路 (15)2.11.异步串口接口电路 (16)2.13.IIS音频输出和放大电路 (16)2.14.按键、蜂鸣器和LED电路 (17)2.15.模数转换接口电路 (18)2.16.JTAG接口电路 (19)2.17.IIC温度传感器（LM75A）电路 (20)第三章板上资源测试方法和步聚 (20)3.1.如何运行测试程序 (20)3.2.内存SDRAM读写自测试 (23)3.3.PWM脉宽调试和蜂鸣器测试 (23)3.4.IIC总线测温 (24)3.5.模数转换器ADC测试 (25)3.6.IIS音频播放WAV文件测试 (26)B H OST（SL811HST）测试 (28)B D EVICE（PDIUSBD12）测试 (29)3.9.黑白STN液晶屏测试 (30)3.10.黑白STN液晶屏显示英文字符测试 (31)3.114级灰度STN液晶屏测试 (31)3.12.16级灰度STN液晶屏测试 (32)3.13.256色STN液晶屏测试 (33)3.14.外部电平中断测试 (33)3.15．ZLG7289测试 (34)3.16.GET NANDFLASH INFORMATION (34)第四章ARM 编译调试开发平台的搭建 (35)4.1．安装ADS1.20编译调试环境 (35)4.2．安装并运行调试代理H-JTAG V0.4.1 (35)4.3．为H-JTAG调试代理正确配置AXD D EBUGGER (38)4.4．使用H-JTAG在ADS1.20环境下进行仿真调试 (40)第五章如何使用FLASHPGM 快速烧写FLASH (42)5.1计算机的设置 (42)5.2选择编程文件类型 (45)5.3点击编程按钮 (46)第六章JD44B0X_BIOS 的烧写与使用 (47)6.1.JD44B0X_BIOS编译说明 (47)6.2.用BIOS通过网口烧写应用程序U C/OS-II到FLASH 里 (47)6.3.用BIOS通过串口烧写应用程序U C/OS-II到FLASH 里 (48)6.4.用BIOS通过网口来快速运行和调试应用程序U C/OS-II (49)6.5.用BIOS通过串口来全速运行和调试应用程序U C/OS-II (50)6.6．JD44B0X_BIOS命令简表 (50)6.7．JD44B0X_BIOS命令详解 (52)第七章建立UCLINUX 开发环境 (55)7.1 U C LINUX 简介 (55)7.2如何建立U C LINUX 开发环境 (55)7.3 U C LINUX 内核的编译步骤 (56)7.4利用FTP下载应用程序到目标系统 (57)第八章JD44B0X 如何恢复到出厂设置 (65)第九章JD44B0X 如何烧写UCLINUX (66)9.1.烧写前准备 (66)9.2.烧写中断向量表BOOT.BIN (66)9.3.烧写U CL INUX 内核： (67)9.4．烧写U CL INUX 根文件系统 (67)9.5．输入命令MRUN 就可以运行UCLINUX 了 (68)第十章WFTPD 配置（FTP 服务器） (68)10.1运行WFTPD32.EXE (68)10.2 (69)10.3输入用户名EFUN (71)10.4输入密码EFUN 点击OK (72)第十一章相关的术语解释 (73)11.1.XMODEM协议 (73)11.2.N AND F LASH 和N OR F LASH 详解 (74)11.3.SDRAM存储器 (76)第十二章JD44B0X 开发板使用FAQ (76)12.1.如何重新烧写BIOS? (76)12.2.为何超级终端不能输入？ (76)12.3.为何超级终端里，BIOS 不接受AP等指令？ (76)12.4.为何网络PING 不通？ (76)12.5.为何S UPER JTAG连不上目标板？................................错误！未定义书签。

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K4S641632FCMOS SDRAM

Rev. 1.1 May. 200364Mbit SDRAM1M x 16Bit x 4 BanksSynchronous DRAMLVTTL

* Samsung Electronics reserves the right to change products or specification without notice. Revision 1.1May. 2003K4S641632FCMOS SDRAM

Rev. 1.1 May. 2003Revision HistoryRevision 0.0 (June, 2001) Revision 0.1 (Sep., 2001) •Changed the Notes in Operating AC Parameter. < Before > 5. For 1H/1L, tRDL=1CLK and tDAL=1CLK+tRP is also supported . SAMSUNG recommends tRDL=2CLK and tDAL=2CLK + tRP. < After > 5.In 100MHz and below 100MHz operating conditions, tRDL=1CLK and tDAL=1CLK + 20ns is also supported. SAMSUNG recommends tRDL=2CLK and tDAL=2CLK + tRP.

Revision 1.0 (May, 2003) •Revision Changed (Confirmed revision will be 1.0)

Revision 1.1 (May, 2003) •Delete 100MHz speedK4S641632FCMOS SDRAM

Rev. 1.1 May. 2003 The K4S641632F is 67,108,864 bits synchronous high datarate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits,fabricated with SAMSUNG′s high performance CMOS technol-ogy. Synchronous design allows precise cycle control with theuse of system clock I/O transactions are possible on every clockcycle. Range of operating frequencies, programmable burstlength and programmable latencies allow the same device to beuseful for a variety of high bandwidth, high performance mem-ory system applications.

• JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address• Four banks operation

• MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)• All inputs are sampled at the positive going edge of the system clock • Burst read single-bit write operation• DQM for masking • Auto & self refresh• 64ms refresh period (4K cycle)

GENERAL DESCRIPTIONFEATURES

FUNCTIONAL BLOCK DIAGRAM1M x 16Bit x 4 Banks Synchronous DRAM

Samsung Electronics reserves the right to change products or specification without notice. *

Bank SelectData Input Register1M x 161M x 16

Sense AMPOutput Buffer

I/O Control

Column DecoderLatency & Burst LengthProgramming Register

Address RegisterRow BufferRefresh CounterRow Decoder

Col. BufferLRASLCBRLCKELRASLCBRLWELDQM

CLKCKECSRASCASWEL(U)DQM

LWELDQM

DQiCLK

ADD

LCASLWCBR

1M x 161M x 16

Timing Register

ORDERING INFORMATIONPart No.Max Freq.InterfacePackage K4S641632F-TC50/TL50200MHz(CL=3)

LVTTL54TSOP(II)

K4S641632F-TC55/TL55183MHz(CL=3)

K4S641632F-TC60/TL60166MHz(CL=3) K4S641632F-TC70/TL70143MHz(CL=3) K4S641632F-TC75/TL75133MHz(CL=3)K4S641632FCMOS SDRAM

Rev. 1.1 May. 2003VDDDQ0VDDQDQ1DQ2VSSQDQ3DQ4VDDQDQ5DQ6VSSQDQ7VDDLDQMWECASRASCSBA0BA1A10/APA0A1A2A3VDD123456789101112131415161718192021222324252627545352515049484746454443424140393837363534333231302928PIN CONFIGURATION (Top view)VSS

DQ15

VSSQ

DQ14

DQ13VDDQ

DQ12

DQ11VSSQ

DQ10

DQ9VDDQ

DQ8

VSS

N.C/RFU

UDQMCLKCKEN.CA11A9A8A7A6A5A4VSS

54Pin TSOP (II)(400mil x 875mil)(0.8 mm Pin pitch)PIN FUNCTION DESCRIPTION

PinNameInput FunctionCLKSystem clockActive on the positive going edge to sample all inputs.

CSChip selectDisables or enables device operation by masking or enabling all inputs except CLK, CKE and L(U)DQM

CKEClock enableMasks system clock to freeze operation from the next clock cycle.CKE should be enabled at least one cycle prior to new command.Disable input buffers for power down in standby.

A0 ~ A11Address

Row/column addresses are multiplexed on the same pins.

Row address : RA0 ~ RA11, Column address : CA0 ~ CA7

BA0 ~ BA1Bank select addressSelects bank to be activated during row address latch time.Selects bank for read/write during column address latch time.

RASRow address strobeLatches row addresses on the positive going edge of the CLK with RAS low.Enables row access & precharge.

CASColumn address strobeLatches column addresses on the positive going edge of the CLK with CAS low.Enables column access.

WEWrite enable

Enables write operation and row precharge.

Latches data in starting from CAS, WE active.

L(U)DQMData input/output maskMakes data output Hi-Z, tSHZ after the clock and masks the output.Blocks data input when L(U)DQM active.

DQ0 ~ 15Data input/outputData inputs/outputs are multiplexed on the same pins.VDD/VSSPower supply/groundPower and ground for the input buffers and the core logic.

VDDQ/VSSQData output power/groundIsolated power supply and ground for the output buffers to provide improved noise immunity.

N.C/RFUNo connection/reserved for future useThis pin is recommended to be left No Connection on the device.