knowledge absorption in the Optical Technology (OT) industry in Shanghai A slender string design for
光谱分形状英文名
光谱分形状英文名Fractal SpectraThe captivating world of fractals has long been a source of fascination for scientists, mathematicians, and artists alike. One particularly intriguing aspect of this intricate geometric realm is the exploration of fractal spectra. These remarkable patterns, rooted in the fundamental principles of light and energy, have the power to unveil the hidden complexities of our natural world.Fractals, by their very nature, are self-similar structures that exhibit patterns at every scale, from the microscopic to the cosmic. When applied to the study of light and electromagnetic radiation, these fractal structures reveal a depth of understanding that transcends the boundaries of traditional scientific inquiry. The fractal spectra, a manifestation of this interplay between light and geometry, offer a unique window into the underlying rhythms and harmonies that govern the universe.At the core of fractal spectra lies the concept of self-similarity, where patterns repeat across different scales. This principle is exemplified in the renowned Mandelbrot set, a striking fractal shape that hascaptured the imagination of countless individuals. When this fractal is subjected to spectral analysis, the resulting patterns often exhibit a remarkable level of complexity and beauty, mirroring the intricate structure of the original form.One of the key aspects of fractal spectra is their ability to reveal the hidden harmonies within the electromagnetic spectrum. By decomposing light into its constituent wavelengths, the fractal patterns that emerge often display intricate and mesmerizing designs. These patterns can be seen in the vibrant hues of a rainbow, the shimmering iridescence of butterfly wings, and the shimmering patterns of light on the surface of a pond.Delving deeper into the realm of fractal spectra, we begin to uncover the profound connections between the microscopic and the macroscopic. The self-similar patterns observed in the spectra of individual atoms and molecules are echoed in the larger-scale structures of galaxies and cosmic phenomena. This realization has led to groundbreaking discoveries in fields such as quantum physics, astrophysics, and materials science, as researchers strive to unravel the underlying principles that govern the behavior of light and energy.The exploration of fractal spectra has also had a profound impact on our understanding of the natural world. By studying the fractalpatterns in the absorption and emission spectra of various materials, scientists have been able to gain insights into the molecular and atomic structures of these substances. This knowledge has enabled advancements in fields ranging from chemistry and materials science to biology and medical research.Furthermore, the fractal nature of light has inspired a wealth of artistic expression and technological innovation. Visual artists have long been captivated by the mesmerizing patterns of fractal spectra, incorporating them into mesmerizing works of art that blur the boundaries between science and aesthetics. Similarly, the principles of fractal optics have revolutionized the design of optical devices, from high-resolution imaging systems to advanced communication technologies.In conclusion, the exploration of fractal spectra represents a profound and ongoing journey of scientific discovery, artistic expression, and technological advancement. By delving into the intricate patterns and harmonies that govern the behavior of light and energy, we unlock a deeper understanding of the fundamental principles that shape our universe. The study of fractal spectra promises to continue yielding transformative insights, as we strive to unravel the mysteries of the natural world and push the boundaries of human knowledge and creativity.。
opticallimitingmaterials光学材料限制48
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Three-level energy diagram
Four-level energy diagram
Reverse Saturable Absorption (RSA)
• The excited state cross section is larger than the ground state cross section.
• Sequential TPA, ES > G. • ES > the pulse duration. • Wide range of incident intensities.
• Low threshold.
• Large non linear absorption over a broad spectral bandwidth.
• Output s. input fluence
Input fluence
Transmission
• Transmission vs. input energy
Input energy
Porphyrins and Phthalocyanines
Porphyrins and Phthalocyanines
• Conclusion
Introduction
• Lasers are used in: CD players, scanners, laser pointers, spectroscopic studies, optical sensors, astronomy, military, etc.
光电技术专业英语词汇
《光电技术》专业英语词汇1.Absorption coefficient 吸收系数2.Acceptance angle 接收角3.fibers 光纤4.Acceptors in semiconductors 半导体接收器5.Acousto-optic modulator 声光调制6.Bragg diffraction 布拉格衍射7.Air disk 艾里斑8.angular radius 角半径9.Airy rings 艾里环10.anisotropy 各向异性11.optical 光学的12.refractive index 各向异性13.Antireflection coating 抗反膜14.Argon-ion laser 氩离子激光器15.Attenuation coefficient 衰减系数16.Avalanche 雪崩17.breakdown voltage 击穿电压18.multiplication factor 倍增因子19.noise 燥声20.Avalanche photodiode(APD) 雪崩二极管21.absorption region in APD APD 吸收区域22.characteristics-table 特性表格23.guard ring 保护环24.internal gain 内增益25.noise 噪声26.photogeneration 光子再生27.primary photocurrent 起始光电流28.principle 原理29.responsivity of InGaAs InGaAs 响应度30.separate absorption and multiplication(SAM) 分离吸收和倍增31.separate absorption grading and multiplication(SAGM) 分离吸收等级和倍增32.silicon 硅33.Average irradiance 平均照度34.Bandgap 带隙35.energy gap 能级带隙36.bandgap diagram 带隙图37.Bandwidth 带宽38.Beam 光束39.Beam splitter cube立方分束器40.Biaxial crystals 双轴晶体41.Birefringent 双折射42.Bit rate 位率43.Black body radiation law 黑体辐射法则44.Bloch wave in a crystal 晶体中布洛赫波45.Boundary conditions 边界条件46.Bragg angle 布拉格角度47.Bragg diffraction condition 布拉格衍射条件48.Bragg wavelength 布拉格波长49.Brewster angle 布鲁斯特角50.Brewster window 布鲁斯特窗51.Calcite霰石52.Carrier confinement 载流子限制53.Centrosymmetric crystals 中心对称晶体54.Chirping 啁啾55.Cladding覆层56.Coefficient of index grating 指数光栅系数57.Coherence 连贯性pensation doping 掺杂补偿59.Conduction band 导带60.Conductivity 导电性61.Confining layers 限制层62.Conjugate image 共轭像63.Cut-off wavelength 截止波长64.Degenerate semiconductor简并半导体65.Density of states 态密度66.Depletion layer 耗尽层67.Detectivity 探测率68.Dielectric mirrors 介电质镜像69.Diffraction 衍射70.Diffraction grating 衍射光栅71.Diffraction grating equation 衍射光栅等式72.Diffusion current 扩散电流73.Diffusion flux 扩散流量74.Diffusion Length 扩散长度75.Diode equation 二极管公式76.Diode ideality factor 二极管理想因子77.Direct recombination 直接复合78.Dispersion 散射79.Dispersive medium 散射介质80.Distributed Bragg reflector 分布布拉格反射器81.Donors in semiconductors 施主离子82.Doppler broadened linewidth 多普勒扩展线宽83.Doppler effect 多普勒效应84.Doppler shift 多普勒位移85.Doppler-heterostructure 多普勒同质结构86.Drift mobility漂移迁移率87.Drift Velocity 漂移速度88.Effective density of states 有效态密度89.Effective mass 有效质量90.Efficiency 效率91.Einstein coefficients 爱因斯坦系数92.Electrical bandwidth of fibers 光纤电子带宽93.Electromagnetic wave 电磁波94.Electron affinity 电子亲和势95.Electron potential energy in a crystal 晶体电子阱能量96.Electro-optic effects 光电子效应97.Energy band 能量带宽98.Energy band diagram 能量带宽图99.Energy level 能级100.Epitaxial growth外延生长101.Erbium doped fiber amplifier 掺饵光纤放大器102.Excess carrier distribution 过剩载流子扩散103.External photocurrent 外部光电流104.Extrinsic semiconductors 本征半导体105.Fabry-Perot laser amplifier 法布里-珀罗激光放大器106.Fabry-Perot optical resonator 法布里-珀罗光谐振器107.Faraday effect 法拉第效应108.Fermi-Dirac function 费米狄拉克结109.Fermi energy 费米能级110.Fill factor 填充因子111.Free spectral range 自由谱范围112.Fresnel’s equations菲涅耳方程113.Fresnel’s optical indicatrix 菲涅耳椭圆球114.Full width at half maximum半峰宽115.Full width at half power半功率带宽116.Gaussian beam 高斯光束117.Gaussian dispersion 高斯散射118.Gaussian pulse 高斯脉冲119.Glass perform玻璃预制棒120.Goos Haenchen phase shift Goos Haenchen相位移121.Graded index rod lens 梯度折射率棒透镜122.Group delay 群延迟123.Group velocity 群参数124.Half-wave plate retarder 半波延迟器125.Helium-Neon laser氦氖激光器126.Heterojunction 异质结127.Heterostructure 异质结构128.Hole 空穴129.Hologram 全息图130.Holography 全息照相131.Homojunction 同质结132.Huygens-Fresnel principle惠更斯-菲涅耳原理133.Impact-ionization 碰撞电离134.Index matching 指数匹配135.Injection 注射136.Instantaneous irradiance 自发辐射137.Integrated optics 集成光路138.Intensity of light 光强139.Intersymbol interference 符号间干扰140.Intrinsic concentration本征浓度141.Intrinsic semiconductors 本征半导体142.Irradiance 辐射SER 激光144.active medium 活动介质145.active region 活动区域146.amplifiers 放大器147.cleaved-coupled-cavity解理耦合腔148.distributed Bragg reflection 分布布拉格反射149.distributed feedback 分布反馈150.efficiency of the He-Ne 氦氖效率151.multiple quantum well 多量子阱152.oscillation condition 振荡条件ser diode 激光二极管sing emission 激光发射155.LED 发光二极管156.Lineshape function 线形结157.Linewidth 线宽158.Lithium niobate铌酸锂159.Load line 负载线160.Loss coefficient 损耗系数161.Mazh-Zehnder modulator Mazh-Zehnder型调制器162.Macrobending loss 宏弯损耗163.Magneto-optic effects 磁光效应164.Magneto-optic isolator 磁光隔离165.Magneto-optic modulator 磁光调制166.Majority carriers 多数载流子167.Matrix emitter 矩阵发射168.Maximum acceptance angle 最优接收角169.Maxwell’s wave equation 麦克斯维方程170.Microbending loss 微弯损耗171.Microlaser 微型激光172.Minority carriers 少数载流子173.Modulated directional coupler 调制定向偶合器174.Modulation of light 光调制175.Monochromatic wave 单色光176.Multiplication region 倍增区177.Negative absolute temperature 负温度系数 round-trip optical gain 环路净光增益179.Noise 噪声180.Noncentrosymmetric crystals 非中心对称晶体181.Nondegenerate semiconductors 非简并半异体182.Non-linear optic 非线性光学183.Non-thermal equilibrium 非热平衡184.Normalized frequency 归一化频率185.Normalized index difference 归一化指数差异186.Normalized propagation constant 归一化传播常数187.Normalized thickness 归一化厚度188.Numerical aperture 孔径189.Optic axis 光轴190.Optical activity 光活性191.Optical anisotropy 光各向异性192.Optical bandwidth 光带宽193.Optical cavity 光腔194.Optical divergence 光发散195.Optic fibers 光纤196.Optical fiber amplifier 光纤放大器197.Optical field 光场198.Optical gain 光增益199.Optical indicatrix 光随圆球200.Optical isolater 光隔离器201.Optical Laser amplifiers 激光放大器202.Optical modulators 光调制器203.Optical pumping 光泵浦204.Optical resonator 光谐振器205.Optical tunneling光学通道206.Optical isotropic光学各向同性的207.Outside vapor deposition管外气相淀积208.Penetration depth 渗透深度209.Phase change 相位改变210.Phase condition in lasers 激光相条件211.Phase matching 相位匹配212.Phase matching angle 相位匹配角213.Phase mismatch 相位失配214.Phase modulation 相位调制215.Phase modulator 相位调制器216.Phase of a wave 波相217.Phase velocity 相速218.Phonon 光子219.Photoconductive detector 光导探测器220.Photoconductive gain 光导增益221.Photoconductivity 光导性222.Photocurrent 光电流223.Photodetector 光探测器224.Photodiode 光电二极管225.Photoelastic effect 光弹效应226.Photogeneration 光子再生227.Photon amplification 光子放大228.Photon confinement 光子限制229.Photortansistor 光电三极管230.Photovoltaic devices 光伏器件231.Piezoelectric effect 压电效应232.Planck’s radiation distribution law 普朗克辐射法则233.Pockels cell modulator 普克尔斯调制器234.Pockel coefficients 普克尔斯系数235.Pockels phase modulator 普克尔斯相位调制器236.Polarization 极化237.Polarization transmission matrix 极化传输矩阵238.Population inversion 粒子数反转239.Poynting vector能流密度向量240.Preform 预制棒241.Propagation constant 传播常数242.Pumping 泵浦243.Pyroelectric detectors 热释电探测器244.Quantum efficiency 量子效应245.Quantum noise 量子噪声246.Quantum well 量子阱247.Quarter-wave plate retarder 四分之一波长延迟248.Radiant sensitivity 辐射敏感性249.Ramo’s theorem拉莫定理250.Rate equations速率方程251.Rayleigh criterion 瑞利条件252.Rayleigh scattering limit 瑞利散射极限253.Real image 实像254.Recombination 复合255.Recombination lifetime 复合寿命256.Reflectance 反射257.Reflection 反射258.Refracted light 折射光259.Refractive index 折射系数260.Resolving power分辩力261.Response time 响应时间262.Return-to-zero data rate 归零码263.Rise time 上升时间264.Saturation drift velocity 饱和漂移速度265.Scattering 散射266.Second harmonic generation 二阶谐波267.Self-phase modulation 自相位调制268.Sellmeier dispersion equation色列米尔波散方程式269.Shockley equation肖克利公式270.Shot noise肖特基噪声271.Signal to noise ratio 信噪比272.Single frequency lasers 单波长噪声273.Single quantum well 单量子阱274.Snell’s law斯涅尔定律275.Solar cell 光电池276.Solid state photomultiplier 固态光复用器277.Spectral intensity 谱强度278.Spectral responsivity 光谱响应279.Spontaneous emission 自发辐射280.stimulated emission 受激辐射281.Terrestrial light 陆地光282.Theraml equilibrium热平衡283.Thermal generation 热再生284.Thermal velocity 热速度285.Thershold concentration 光强阈值286.Threshold current 阈值电流287.Threshold wavelength 阈值波长288.Total acceptance angle 全接受角289.Totla internal reflection 全反射290.Transfer distance 转移距离291.Transit time 渡越时间292.Transmission coefficient 传输系数293.Tramsmittance 传输294.Transverse electric field 电横波场295.Tranverse magnetic field 磁横波场296.Traveling vave lase 行波激光器297.Uniaxial crystals 单轴晶体298.UnPolarized light 非极化光299.Wave 波300.Wave equation 波公式301.Wavefront 波前302.Waveguide 波导303.Wave number 波数304.Wave packet 波包络305.Wavevector 波矢量306.Dark current 暗电流307.Saturation signal 饱和信号量308.Fringing field drift 边缘电场漂移plementary color 补色310.Image lag 残像311.Charge handling capability 操作电荷量312.Luminous quantity 测光量313.Pixel signal interpolating 插值处理314.Field integration 场读出方式315.Vertical CCD 垂直CCD316.Vertical overflow drain 垂直溢出漏极317.Conduction band 导带318.Charge coupled device 电荷耦合组件319.Electronic shutter 电子快门320.Dynamic range 动态范围321.Temporal resolution 动态分辨率322.Majority carrier 多数载流子323.Amorphous silicon photoconversion layer 非晶硅存储型324.Floating diffusion amplifier 浮置扩散放大器325.Floating gate amplifier 浮置栅极放大器326.Radiant quantity 辐射剂量327.Blooming 高光溢出328.High frame rate readout mode 高速读出模式329.Interlace scan 隔行扫描330.Fixed pattern noise 固定图形噪声331.Photodiode 光电二极管332.Iconoscope 光电摄像管333.Photolelctric effect 光电效应334.Spectral response 光谱响应335.Interline transfer CCD 行间转移型CCD336.Depletion layer 耗尽层plementary metal oxide semi-conductor 互补金属氧化物半导体338.Fundamental absorption edge 基本吸收带339.Valence band 价带340.Transistor 晶体管341.Visible light 可见光342.Spatial filter 空间滤波器343.Block access 块存取344.Pupil compensation 快门校正345.Diffusion current 扩散电流346.Discrete cosine transform 离散余弦变换347.Luminance signal 高度信号348.Quantum efficiency 量子效率349.Smear 漏光350.Edge enhancement 轮廓校正351.Nyquist frequency 奈奎斯特频率352.Energy band 能带353.Bias 偏压354.Drift current 漂移电流355.Clamp 钳位356.Global exposure 全面曝光357.Progressive scan 全像素读出方式358.Full frame CCD 全帧CCD359.Defect correction 缺陷补偿360.Thermal noise 热噪声361.Weak inversion 弱反转362.Shot noise 散粒噪声363.Chrominance difference signal 色差信号364.Color temperature 色温365.Minority carrier 少数载流子366.Image stabilizer 手振校正367.Horizontal CCD 水平CCD368.Random noise 随机噪声369.Tunneling effect 隧道效应370.Image sensor 图像传感器371.Aliasing 伪信号372.Passive 无源373.Passive pixel sensor 无源像素传感器374.Line transfer 线转移375.Correlated double sampling 相关双采样376.Pinned photodiode 掩埋型光电二极管377.Overflow 溢出378.Effective pixel 有效像素379.Active pixel sensor 有源像素传感器380.Threshold voltage 阈值电压381.Source follower 源极跟随器382.Illuminance 照度383.Refraction index 折射率384.Frame integration 帧读出方式385.Frame interline transfer CCD 帧行间转移CCD 386.Frame transfer 帧转移387.Frame transfer CCD 帧转移CCD388.Non interlace 逐行扫描389.Conversion efficiency 转换效率390.Automatic gain control 自动增益控制391.Self-induced drift 自激漂移392.Minimum illumination 最低照度393.CMOS image sensor COMS图像传感器394.MOS diode MOS二极管395.MOS image sensor MOS型图像传感器396.ISO sensitivity ISO感光度。
光学模型介绍英文作文
光学模型介绍英文作文英文：Optical model is a mathematical model that describesthe behavior of light in various media, such as air, water, and glass. It is widely used in the field of optics to predict and analyze the propagation, reflection, refraction, and absorption of light.The optical model is based on the principles of geometrical optics and wave optics. Geometrical optics assumes that light travels in straight lines and obeys the laws of reflection and refraction at the interface between two media. Wave optics, on the other hand, considers light as a wave that can diffract, interfere, and undergo polarization.One of the most important parameters in the optical model is the refractive index, which is a measure of how much a material slows down the speed of light. Therefractive index is different for different materials and can be used to calculate the angle of refraction when light passes through a medium.Another important parameter is the absorption coefficient, which measures how much light is absorbed by a material per unit distance. This is important for designing optical devices such as filters and lenses.In addition to these parameters, the optical model also considers factors such as the thickness of the medium, the angle of incidence, and the polarization state of light. By combining all these factors, the optical model can accurately predict the behavior of light in various scenarios.中文：光学模型是一种描述光在各种介质中行为的数学模型，例如空气、水和玻璃。
#光纤通信复习题英文
一 Make a choice 1) In graded-index optical fiber, the numerical aperture NA can be expressed as C.A. 21n n -B. ∆2aC. ∆2n 1D. 21n n a -2) In practical SMFs, the core diameter is just below the cutoff of the first higher-order mode; that is, for V slightly A.A. <2.4B. > 2.4C. =3D. =3.53) When the phase difference is an integral multiple of _2π_, the two modes will beat and the input polarization state will be reproduced.A. 2πB. πC. 1800D. π/24) It is well known that the total dispersion in the single-mode regime is composed of two components: C.A. mode-partition noise, inter- symbol InterferenceB. frequency chirp , modal dispersionC. material dispersion , waveguide dispersionD. modal dispersion , waveguide dispersion5) Which of the following codes cannot be transmitted in fibers B. A. CMI B. HDB3 C. 5B6B D. 8B1H6) Dispersion-shifted fiber (DSF) is a type of single-mode fiber designed to have zero dispersion near A nm. A. 1550 B. 850 C. 1310 D. 15107) To make sure that the APD photo detector works properly, a sufficiently D is applied across the p-n junction.A. high forward-bias voltageB. low forward-bias voltageC. low reverse-bias voltageD. high reverse-bias voltage8) A single mode fiber usually has a core diameter of A.A. 10mB. 62.5nmC. 125nmD. 50mm二Blank filling1) Each SDH frame comprising three areas: a section overhead area （SOH ）, a pointer area, a payload area including the data to be transmitted.2) List three applications of FBG(fiber Bragg grating): filter 、Optical Add Drop Multiplexer(OADM) and dispersion compensator. 3) According to whether there is electric or magnetic field in the direction of propagation or not, transverse modes of light waves are classified into different types: TEM modes, TE modes, TM modes and hybrid modes.4) Transmission of information in an optical format is carried out not by frequency modulation of the carrier, but by varying the intensity of the optical power.5) Largely due to attenuation and dispersion, the optical signals undergo waveform distortion and decreased amplitude.6) Material dispersion occurs because the index of refraction varies as a function of the optical wavelength.7) ZDSF is a dispersion shifted single mode fiber that has the zero dispersion wavelength near the 1550 nm window, but outside the window actually used to transmit signals.8)A laser is constructed from three principal parts: a pump source, a gain medium, and an optical resonator.9)An optical fiber comprises at least two layers, a core and a cladding.10)Optical transmitter consists of optical source, a modulator and a channel coupler.11)Fiber refractive index profiles classify fibers as step-index fibers and graded-index fibers.12)BER (The bit error rate) performance and jitter are two important indicators in a opticaldigital communication system.13)LASER is a mechanism for emitting light within the electromagnetic radiation region of thespectrum, via the process of stimulated emission.14)There are two kinds of SOA：Fabry-Perot Amplifier (FPA) and Traveling-Wave Amplifier(TWA) .15)The principal noises associated with photo detectors that have no internal gain are quantumnoise, dark-current noise generated in the bulk material of the photodiode, and surface leakage current noise.16)In a step-index fiber, the refractive index of the core is uniform and undergoes an abruptchange at the core-cladding boundary. In graded-index fibers, the refractive index of the core varies gradually as a function of radial distance from the fiber center.17)If the input pulse excites both polarization components, it becomes broader as the twocomponents disperse along the fiber because of their different group velocities. This phenomenon is called the PMD.18)The most common semiconductor photo detector is the pin photodiode.19)The main cause of intrinsic absorption in the infrared region is the characteristic vibrationfrequency of atomic bonds.20)In SDH transmission structures, a TU (Tributary Unit) includes a low level VC and a TUPTR.21)Extrinsic absorption is caused by impurities introduced into the fiber material.22)Intramodal dispersion is a result of the group velocity being a function of the wavelength.23)The optical amplifiers is divided into 3 groups: semiconductor optical amplifier (SOA),optical fiber amplifier (OPA) and Raman amplifier (FRA).24)There are two kinds of directional couplers: a prism-fibre and a fibre-fibre lapped coupler.25)EDFA has three pumping structures: ①the forward pumping structure; ②the backwardpumping structure; ③ the double pumping structure.26) A laser consists of a gain medium inside a highly reflective optical cavity, as well as a meansto supply energy to the gain medium.27)Attenuation in an optical fiber is caused by absorption losses, scattering losses, and bendinglosses.28)STM-1 frames provide a transmission bit rate of 155 Mbit/s.29)From the point of view of the wave theory, light wave could be described as anelectromagnetic wave.30)Intermodal dispersion is a result of each mode having a different value of the group velocityat a single frequency.31) A typical optical digital communication system usually comprises three parts: transmitter,optical fiber channel, and receiver.32)The pin Photo detector structure consists of p and n regions separated by a very lightlyn-doped intrinsic (i) region.33)Please list three steps of SDH Multiplexing: mapping，aligning ，multiplexing.34)There are three variations of WDM that are commonly used: Broad WDM, Coarse WDM, and Dense WDM. 35)The STM-1 frame is the basic transmission format for SDH. The frame lasts for 125 microseconds; therefore there are 8000 frames per second. 36)In SDH frame structure, the SOH is made up of a regenerator section overhead (RSOH) and a multiplexing section overhead (MSOH). 37)The sensitivity of a photo detector in an optical fiber communication system is describable in terms of the minimum detectable optical power. 38)Please list three applications of EDFA in optical fiber communication system: as preamplifier of receiver 、as power amplifier of transmitter and as the optical repeater. 39) An optical isolator (optical diode), is an optical component which allows the transmission oflight in only one direction.三Interpretation of terms and phrases1) AON (all-optical network) 2) DBR (distributed Bragg reflector)3）FDDI (fiber distributed data interface) 4）HFC (hybrid fiber-coaxial)5）ISDN (integrated services digital network) 6）RA (raman amplifier)7）OC (optical carrier) 8）OTDM (optical time-division multiplexing)9）PON (passive optical network) 10）SCM (subcarrier multiplexing)11）SDH (synchronous digital hierarchy) 12）SPM (self-phase modulation)13）STS (synchronous transpor signal) 14）TW (traveling wave)15）WGA (waveguide-grating router) 16）IMD (intermodulation disortion)17）AWG (arrayed-waveguide grating) 18）AOTF (acousto-optic tunable filter)四 画图题1) Draw the element block of a Distributed forward Raman amplifier2) Draw an element diagram of a Double pump EDFA3) Draw a block diagram of a typical optical digital communication system and briefly describe the functions of each part.OutputInput EDF WDM IsolatorPump Laser Isolator Pump Laser WDMPump Laser outputfiber inputAn optical communication system consists of a transmitter, which encodes a message into an optical signal, a channel, which carries the signal to its destination, and a receiver, which reproduces the message from the received optical signal. The optical repeater is to extend the transmission distance of optical signal.4) Draw the element diagram of the application of optical amplifier.四 简答题1) Dispersion: Any phenomenon in which the velocity of propagation of any electromagnetic wave is wavelength dependent.2) Stimulated EmissionsIf a photon of energy hv 12 impinges on the system while the electron is still in its excited state, the electron is immediately stimulated to drop to the ground state and give off a photon of energy hv 12.3) There are 3 dispersion types in the optical fibers in general:1- Material Dispersion2- Waveguide Dispersion3- Polarization-Mode Dispersion4) Polarization mode dispersion (PMD) is due to slightly different velocity for each polarization mode because of the lack of perfectly symmetric & anisotropic of the fiber5) Laser is an optical oscillator. It comprises a resonant optical amplifier whose output is fed back into its input with matching phase. Any oscillator contains:1. An amplifier with a gain-saturated mechanism2. A feedback system3. A frequency selection mechanism4. An output coupling scheme Optical transmitter Repeater Opticalreceiverfiber fiber6) In thermal equilibrium the stimulated emission is essentially negligible, since the density of electrons in the excited state is very small, and optical emission is mainly because of the spontaneous emission. Stimulated emission will exceed absorption only if the population of the excited states is greater than that of the ground state. This condition is known as Population Inversion. Population inversion is achieved by various pumping techniques.7) Turn on DelayWhen the driving current suddenly jumps from low (I1 < Ith) to high (I2 > Ith) , (step input), there is a finite time before the laser will turn on8) The Quantum LimitFor an ideal photo-detector having unity quantum efficiency and producing no dark current, it is possible to find the minimum received optical power required for a specific BER performance in a digital system. This minimum received power level is known as the quantum limit.9) Gain flatness: The difference between the biggest gain and the smallest gain of the different frequency signal.10) The advantage of Raman amplifier: Simple fabricationLow noise, because amplifying action take place inside the ordinarily fiber.The wavelength can be selected in the low loss waveband.Very wide gain bandwidth.11) Micro bending Loss: microscopic bends of the fiber axis that can arise when the fibers are incorporated into cables. The power is dissipated through the micro bended fiber, because of the repetitive coupling of energy between guided modes & the leaky or radiation modes in the fiber.12) Gain saturation: when near saturation, the gain is nonlinear; saturation, the signal cannot be amplified.13) The disadvantage of Raman amplifier:Need large output power pump laser. As Raman Scattering, the energy is transferred from high frequency to low frequency. Cross talk will affect signal.14) The principal noises associated with photo detectors are:1- Quantum (Shot) noise: arises from statistical nature of the production and collection of photo-generated electrons upon optical illumination. It has been shown that the statistics follow a Poisson process.2- Dark current noise: is the current that continues to flow through the bias circuit in the absence of the light. This is the combination of bulk dark current, which is due to thermally generated e and h in the pn junction, and the surface dark current, due to surface defects, bias voltage and surface area.15) List the advantages of fiber-optic communications over other types of communication technologies.The advantage of optical fiber communication:1. Weight and Size2. Material cost (SiO2 is plentiful)3. Information Capacity4. No electromagnetic interference5. No electrical connection6. Distance between repeaters7. Better security8. Low crosstalk16) The fabrication of amplifierOptical isolator ，Optical multiplexer, EDF, Pump laser17) What are the advantages and disadvantages of SDH system as compared to PDH system? The main limitations of PDH are:Inability to identify individual channels in a higher-order bit stream;Insufficient capacity for network management;Most PDH network management is proprietary;There is no standardized definition of PDH bit rates greater than 140 Mbit/s; and,There are different hierarchies in use around the world. Specialized interface equipment is required to interwork the two hierarchies.18) List the types of fiber attenuation and dispersion.Absorbing\scattering and bending lossMaterial/ mode/ waveguide dispersion.19) The avalanche effect.The created carriers are accelerated by the high electric field, gaining enough energy to cause further impact ionization.20) Dynamic range:System dynamic range is the maximum optical power range to which any detector must be able to respond.21) Differentiate between step index and graded index optical fiber.Step index fiber has a core of one index of refraction; graded index fiber has a core in which the outside edge starts with a low index of refraction that gradually increases towards the center. 五 计算题1) Suppose two graded index fibers are misaligned with an axial offset of d=0.3a. Try to calculate the fraction of optical power coupled from the first fiber into the second fiber. （Parameter a is the core radius ）The fraction of optical power coupled in the fiber ：122222arccos()152262T P d d d d P a a a a π⎧⎫⎡⎤⎛⎫⎪⎪⎛⎫=---⎢⎥⎨⎬ ⎪ ⎪⎝⎭⎢⎥⎝⎭⎪⎪⎣⎦⎩⎭()()21220.320.15arccos(0.15)10.15532π⎧⎫⎛⎫⎪⎪⎡⎤=--- ⎪⎨⎬⎣⎦ ⎪⎪⎪⎝⎭⎩⎭0.748=Turn it into dB , obtain 10log 1.27T P dB P=- 1) A double-heterojunction InGaAsP LED emitting at a peak wavelength of 1310 nm has radiative and nonradiative recombination times of 30 and 100 ns, respectively. The drive current is 40 mA. Compute internal quantum efficiency and internal optical power. Then the internalquantum efficiency isthe internal power level is ：2) A GaAs laser operating at800nm has a 500-µm length and a refractive index n=3.7.What are the frequency and wavelength spacing? From 2c Ln ν∆=，22Lnλλ∆= obtain: 86310812250010 3.7c GHz Ln ν-⨯∆===⨯⨯⨯，3) In a 100-ns pulse, 6×106 photons at a wavelength of 1300nm fall on an In GaAs photo detector. On the average, 5.4×106 electron-hole (e-h) pairs are generated.Please calculate the quantum efficiency.The quantum efficiencyNumber of e-h pairs generated= -----------------------------------------Number of incident photons=665.410610⨯⨯0.90= 4) Consider a graded-index optical fiber, core index n1=1.50 and the core cladding index difference Δ=0.01.Try to calculate:1. The cladding index n22. The numerical aperture NA解：已知：n 1 =1.50，∆=0.01，根据(1)77.0100/130/130/1111int =+=+=---nr r r τττηmW 92.21031.110602.1/103106256.604.077.0619834int int =⨯⨯⨯⨯⨯⋅⨯⨯⨯==---s m s J q Ihc P λη(2)由（1）式，可知2 n 12∆= n 12- n 22n 22= n 12（1-2∆）n 2= n 1∆-21将n 1、∆代入上式，可得n 2==1.5002.01-=1.5098.0⨯=1.50⨯0.98995=1.48491将n 1、∆代入（2）式，可得NA = n 1∆2=1.5002.0=1.50⨯0.14142=0.21213The numerical aperture NA isNA=∆21n =22.001.02560.1=⨯⨯The normalized frequency V=∆221λπn a =01.0231.15056.11416.3⨯⨯⨯=26.454>V C =2.4057) Consider a 30-km long optical fiber that has an attenuation of 0.8dB/km at 1300 nm. If 200µW of optical power is launched into the fiber, try to calculate the optical output power P out .First we turn the input signal power unit from mW into dBm63()20010()10log 10log 7.01110in in P W W P dBm dBm mW W --⎡⎤⨯⎡⎤===-⎢⎥⎢⎥⨯⎣⎦⎣⎦From ()10(0)l g ()P dB o km z P z α=, as z=30k, the output power is ： ()()()10log 10log 11out in P W P W P dBm z out mW mW α⎡⎤⎡⎤==-⎢⎥⎢⎥⎣⎦⎣⎦7.0(0.8/)(30)31.0dBm dB km km dBm =--=- Also31.0/103(30)10(1)0.79100.79P km mW mW W μ--==⨯=8) A photodiode is constructed of GaAs, which has a band-gap energy of 1.43eV at 300K.What is the cutoff wavelength? The cutoff wavelength is ()()()()348196.62510310/8691.43 1.610/c g J s m s hc nm E eV J eV λ--⨯⋅⨯===⨯2) 一个折射率为3.6的GaAs 光源耦合进折射率为1.48的石英光纤中，如果光纤端面和光源在物理上紧密相接，于是分界面上发生菲涅尔反射：A GaAs optical source with a refractive index of 3.6 is coupled to a silica fiber that has a refractive index of 1.48 . If the fiber end and the source are in close physical contact , then , the Fresnel reflection at the interface is这相当于17.4%的发射功率反射回光源，与这一R 值相对应的耦合功率由下式给定：This value of R corresponds to a reflection of 17.4 percent of the emitted optical power back into the source . Given that由反射造成的功率损耗为：The power loss L in decibels is found from3) 有一个InGaAs 光电二极管，在100ns 内共入射了波长为1300 nm 的光子6×106 个，产生了 5.4×106 个电子空隙对，则其量子效率可以等于：In a 100-ns pulse, 6×106 photons at a wavelength of 1300 nm fall on an InGaAs photodetector. On the average, 5.4x106 electron-hole pairs are generated, quantum efficiency is .4) 能量为1.53 × 10-19 J 的光子入射到光电二极管上，此二极管的响应度为0.65 A/W ，如果入射光功率为10 mW ，则产生的光电流为：Photons of energy 1.53 × 10-19 J are incident on a photodiode which has a responsivity of 0.65 A/W. If the optical power level is 10 μW, the photocurrent is174.048.160.348.160.32211=⎪⎭⎫ ⎝⎛+-=⎪⎪⎭⎫ ⎝⎛+-=n n n n R ()em ittedcoupled P R P -=110log 10log(1)0.83dB coupled emitted P L R P ⎛⎫=-=--= ⎪⎝⎭%90106104.566=⨯⨯=ημA 5.6)μW 10()A/W 65.0(=⨯=ℜ=in p P I5) 如上图所示，波长范围为1300 nm - 1600 nm 的InGaAs pin ，量子效率约为90%，因此响应度为：As shown in above figure, for the wavelength range 1300 nm < λ < 1600 nm, the quantum efficiency for InGaAs is around 90%. So responsivity is当波长为1300 nm 时：Responsivity at 1300 nm is ：6) 一种硅APD 在波长900 nm 时的量子效率为65%，假定0.5 mW 的光功率产生的倍增电流为10 mA ，试求倍增因子M 。
光学工程的英语文献
光学工程的英语文献English:For English literature on optical engineering, one can delve into various aspects of the field ranging from fundamental principles to advanced applications. A good starting point might be textbooks like "Optical Engineering Fundamentals" by Bruce H. Walker, which covers the basic principles of optics, including geometrical optics, wave optics, and optical system design. For those interested in more specialized topics, journals like the "Journal of the Optical Society of America A" and "Optics Express" offer a plethora of research papers on cutting-edge advancements in optical science and engineering. Topics covered in these journals include but are not limited to optical imaging, photonics, laser technology, optical materials, and computational optics. Additionally, conference proceedings from events like the "SPIE Optical Engineering + Applications" conference provide insights into the latest developments and innovations in the field. These resources collectively offer a comprehensive overview of the current state and future directions of optical engineering, catering to both beginners and seasoned professionals.中文翻译:对于光学工程的英文文献，人们可以深入研究该领域的各个方面，从基本原理到先进应用。
薄膜厚度及折射率的计算方法
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(PLD). The method is based on the determination of the upper and lower envelopes of the interference fringes in the measured transmission spectrum [5–7].
‘‘Refractor’’ has several advantages: (1) it gives accurate results in a short time and reduces the number of arithmetic operations needed to compute n, k and d as compared to other computer techniques [1–4]; (2) it takes into account possible inhomogeneities in the film thickness; (3) it is not based on minimisation techniques as other commercial software; (4) using the obtained n, k and d values, the simulated spectrum as well as the experimental one can be graphically compared.
PACS: 07.05.Tp; 78.66.Bz; 78.20.Àc
Keywords: Transmittance; Refractive index; Extinction coefficient; Pulsed laser deposition
光电传感器(中英文对照版)
Photoelectric sensorKey word: photoelectric effect photoelectric element photoelectric sensor classification sensor application characteristics .Abstract: in the rapid development of science and technology in the modern society, mankind has into the rapidly changing information era, people in daily life, the production process, rely mainly on the detection of information technology by acquiring, screening and transmission, to achieve the brake control, automatic adjustment, at present our country has put detection techniques listed in one of the priority to the development of science and technology. Because of microelectronics technology, photoelectric semiconductor technology, optical fiber technology and grating technical development makes the application of the photoelectric sensor is growing. The sensor has simple structure, non-contact, high reliability, high precision, measurable parameters and quick response and more simple structure, form etc, and flexible in automatic detection technology, it has been widely applied in photoelectric effect as the theoretical basis, the device by photoelectric material composition. Text:First, theoretical foundation - photoelectric effectPhotoelectric effect generally have the photoelectric effect, optical effect, light born volts effect.The light shines in photoelectric material, according to the electronic absorption material surface energy, if absorbed energy large enough electronic electronic will overcome bound from material surface and enter the outside space, which changes photoelectron materials, this kind of phenomenon become the conductivity of the photoelectric effectAccording to Einstein's photoelectron effect, photon is moving particles, each photon energy for hv (v for light frequency, h for Planck's constant, h = 6.63 * 10-34 J/HZ), thus different frequency of photons have different energy, light, the higher the frequency, the photon energy is bigger. Assuming all the energy photons to photons, electronic energy will increase, increased energy part of the fetter, positive ions used to overcome another part of converted into electronic energy. According to the law of conservation of energy:Type, m for electronic quality, v for electronic escaping the velocity, A microelectronics the work done.From the type that will make the optoelectronic cathode surface escape the necessary conditions are h > A. Due to the different materials have different escaping, so reactive to each kind of cathode materials, incident light has a certain frequency is restricted, when the frequency of incident light under this frequency limit, no matter how the light intensity, won't produce photoelectron launch, this frequency limitA -h m 212νν=called "red limit". The corresponding wavelength for type, c for the speed of light, A reactive for escaping.When is the sun, its electronic energy, absorb the resistivity reduce conductive phenomenon called optical effects. It belongs to the photoelectric effect within. When light is, if in semiconductor electronic energy big with semiconductor of forbidden band width, the electronic energy from the valence band jump into the conduction band, form, and at the same time, the valence band electronic left the corresponding cavities. Electronics, cavitation remained in semiconductor, and participate in electric conductive outside formed under the current role.In addition to metal outer, most insulators and semiconductor have photoelectric effect, particularly remarkable, semiconductor optical effect according to the optoelectronics manufacturing incident light inherent frequency, when light resistance in light, its conductivity increases, resistance drops. The light intensity is strong, its value, if the smaller, its resistance to stop light back to the original value. Semiconductor produced by light illuminate the phenomenon is called light emf, born volts effect on the effect of photoelectric devices have made si-based ones, photoelectric diode, control thyristor and optical couplers, etc.Second, optoelectronic components and characteristicsAccording to the outside optoelectronics manufacturing optoelectronic devices have photoelectron, inflatable phototubes and photoelectric times once tube.1. Phototubes phototubes are various and typical products are vacuum phototubes and inflatable phototubes, light its appearance and structure as shown in figure 1 shows, made of cylindrical metal half cathodic K and is located in the wires cathodic axis of anode in A package of smoke into the vacuum, when incident light within glass shell in the cathode, illuminate A single photon took all of its energy transfer to the cathode materials A free electrons, so as to make the freedom electronic energy increase h. When electrons gain energy more than escape of cathode materials, it reactive A metal surface constraints can overcome escape, form electron emission. This kind of electronic called optoelectronics, optoelectronic escaping the metal surface for after initial kinetic energyPhototubes normal work, anode potential than the cathode, shown in figure 2. In one shot more than "red light frequency is premise, escape from the optoelectronic cathode surface by positive potential attracted the anode in photoelectric tube forming space, called the current stream. Then if light intensity increases, the number of photons bombarded the cathode multiplied, unit of time to launch photoelectron number are also increasing, photo-current greatens. In figure 2 shows circuit, current and resistance is the voltage drop across the only a function of light intensity relations, so as to achieve a photoelectric conversion. When the LTT optoelectronic cathode K, electronic escape from the cathode surface, and was the photoelectric anode is an electric current, power plants absorb deoxidization device in the load resistance - I, the voltagePhototubes photoelectric characteristics fig.03 shows, from the graph in flux knowable, not too big, photoelectric basic characteristics is a straight line.2. Photoelectric times had the sensitivity of vacuum tube due to low, so with people developed has magnified the photomultiplier tubes photo-current ability. Figure 4 is photomultiplier tube structure schematic drawing.图4光电倍增结构示意图From the graph can see photomultiplier tubes also have A cathode K and an anode A, and phototubes different is in its between anode and cathode set up several secondary emission electrodes, D1, D2 and D3... They called the first multiply electrode, the second multiply electrode,... Usually, double electrode for 10 ~ 15 levels. Photomultiplier tubes work between adjacent electrode, keeping a certain minimum, including the cathode potential potentials, each multiply electrode potential filtering increases, the anode potential supreme. When the incident light irradiation, cathodic K escape from the optoelectronic cathode multiplied by first accelerated, by high speed electrode D1 bombarded caused secondary electron emission, D1, an incident can generate multiple secondary electron photonics, D1 emit of secondary electron wasD1, D2 asked electric field acceleration, converged on D2 and again produce secondary electron emission... So gradually produce secondary electron emission, make electronic increased rapidly, these electronic finally arrived at the anode, form a larger anode current. If a n level, multiply electrodes at all levels for sigma, the multiplication of rate is the multiplication of photomultiplier tubes can be considered sigma n rate, therefore, photomultiplier tube has high sensitivity. In the output current is less than 1mA circumstances, it in a very wide photoelectric properties within the scope of the linear relationship with good. Photomultiplier tubes this characteristic, make it more for light measurement.3 and photoconductive resistance photoconductive resistance within the working principle is based on the photoelectric effect. In semiconductor photosensitive material ends of mount electrode lead, it contains transparent window sealed in the tube and shell element photoconductive resistance. Photoconductive resistance properties and parameters are:1) dark resistance photoconductive resistance at room temperature, total dark conditions stable resistance called dark resistance, at the current flow resistance is called dark current.2) light resistance photoconductive resistance at room temperature and certain lighting conditions stable resistance measured, right now is called light resistance of current flow resistance is called light current.4, volt-ampere characteristics of both ends photoconductive resistance added voltage and current flows through photoconductive resistance of the relationship between called volt-ampere characteristics shown, as shown in figure 5. From the graph, the approximate linear volt-ampere characteristics that use should be limited, but when the voltage ends photoconductive resistance, lest than shown dotted lines of power consumption area5, photoelectric characteristics photoconductive resistance between the poles, light when voltage fixed the relationship between with bright current photoelectric characteristics. Called Photoconductive resistance photoelectric characteristics is nonlinear, this is one of the major drawback of photoconductive resistance.6, spectral characteristics is not the same incident wavelength, the sensitivity of photoconductive resistance is different also. Incidence wavelength and photodetector the relationship between relative sensitivity called spectral characteristics. When used according to the wavelength range by metering, choose different material photoconductive resistance.7, response time by photoconductive resistance after photo-current need light, over a period of time (time) rise to reach its steady value. Similarly, in stop lightphoto-current also need, over a period of time (down time) to restore the its dark current, this is photoconductive resistance delay characteristics. Photoconductive resistance rise response time and falling response time about 10-1 ~ 10-3s, namely the frequency response is 10Hz ~ 1000Hz, visible photoconductive resistance cannot be used in demand quick response occasion, this is one of the main photoconductive resistance shortcomings.8 and temperature characteristic photoconductive resistance by temperature affects greatly, temperature rise, dark current increase, reduced sensitivity, which is another photoconductive resistance shortcomings.9, frequency characteristic frequency characteristics refers to an external voltage and incident light, strong must be photo-current I and incident light modulation frequency, the relationship between the f, photoelectric diode is the frequency characteristic of the photoelectric triode frequency characteristics, this is because of the photoelectrictriode shot "yankees there capacitance and carrier base-combed need time's sake. By using the principle of the photoelectric efficiency of optoelectronics manufacturing frequency characteristics of the worst, this is due to capture charge carriers and release charge need a certain time's sake.Three, photoelectric sensorsPhotoelectric sensor is through the light intensity changes into electrical signal changes to achieve control, its basic structure, it first figure 6 by measuring the change of change of converting the light signal, and then using photoelectric element further will light signals into electrical signal by photoelectric sensor general. Illuminant, optical path and optoelectronics. Three components of photoelectric detection method has high precision, fast response, non-contact wait for an advantage, but measurable parameters of simple structure, sensors, form flexible, therefore, photoelectric sensor in the test and control is widely used.By photoelectric sensor generally is composed of three parts, they are divided into: transmitter and receiver and detection circuit shown, as shown in figure 7, transmitter aimed at the target launch beam, the launch of the beam from semiconductor illuminant, general light emitting diode (LED), laser diode and infrared emission diode. Beam uninterrupted launch, or change the pulse width. Receivers have photoelectric diode, photoelectric triode, composed si-based ones. In front of the receiver, equipped with optical components such as lens and aperture, etc. In its back is detection circuit, it can filter out effective signal and the application of the signal. In addition, the structural components in photoelectric switch and launch plate and optical fiber, triangle reflex plate is solid structure launch device. It consists of small triangle cone of reflective materials, can make a beam accurately reflected back from plate, with practical significance. It can be in with the scope of optical axis 0 to 25, make beams change launch Angle from a root almost after launch line, passes reflection or from the rotating polygon.some basic returns.图7Photoelectric sensor is a kind of depend on is analyte and optoelectronics and light source, to achieve the relationship between the measured purpose, so the light source photoelectric sensor plays a very important role, photoelectric sensor power if a constant source, power is very important for design, the stability of the stability of power directly affect the accuracy of measurement, commonly used illuminant have the following kinds:1, leds is a change electric energy into light energy semiconductor devices. It has small volume, low power consumption, long life, fast response, the advantages of high mechanical strength, and can match and integrated circuits. Therefore, widely used in computer, instruments and automatic control equipment.2, silk light bulb that is one of the most commonly used illuminant, it has rich infrared light. If chosen optoelectronics, constitutes of infrared sensor sensitive colour filter can be added to the visible tungsten lamps, but only filter with its infrared does illuminant, such, which can effectively prevent other light interference.3, compared with ordinary light laser laser with energy concentration, directional good, frequency pure, coherence as well as good, is very ideal light sources.The light source, optical path and photoelectric device composition photoelectric sensor used in photoelectric detection, still must be equipped with appropriate measurement circuit. The photoelectric effect to the measurement circuit of photoelectric element of widerange caused changes needed to convert the voltage or current. Different photoelectric element, the measurement circuit required is not identical also. Several semiconductor introduces below optoelectronic devices commonly used measurement circuit.Semiconductor photoconductive resistance can through large current, be in so usually, need not equipped with amplifier. In the output power of demand is bigger, can use figure 8 shows circuit.Figure 9 (a) with temperature compensation given the photosensitive diode bridge type measuring circuit. When the incident light intensity slow change, the reverse resistance photosensitive diode is the slow change, the change of the temperature will cause the bridge output voltage, must compensate. Drift Picture a photosensitive diode as the test components, another into Windows, in neighboring bridge, the change of the temperature in the arms of the influence of two photosensitive diode, therefore, can eliminate the same output with temperature bridge road drift.Light activated triode incident light in work under low illumination, or hope to getbigger output power, also can match with amplifying circuit, as shown in figure 9 shows.Because even in the glare photosensitive batteries, maximum output voltage also only 0.6 V, still cannot make the next level 1 transistor have larger current output, so must add positive bias, as shown in figure 9 (a) below. In order to reduce the transistor circuit impedance variations, base si-based ones to reduce as much as possible without light, when the reverse bias inherit in parallel a resistor si-based ones at both ends. Or like figure 9 (b) as shown by the positive ge diode produces pressure drop and test the voltage produced when exposed to light, make silicon tube e stack, b the voltage between actuators than 0.7 V, and conduction work. This kind of circumstance also can use silicon light batteries, as shown in figure 10 (c) below. Semiconductor photoelectric element of photoelectric circuit can also use integrated operational amplifier. Silicon photosensitive diode can be obtained by integratingop-amp larger output amplitude, as shown in figure 11 (a) below. When light is produced, the optical output voltage in order to guarantee photosensitive diode isreverse biased, in its positive to add a load voltage. Figure 11. (b) give the photocell transform circuit, because the photoelectric si-based ones short-circuit current and illumination of a linear relationship between, so will it up in the op-amp is,inverse-phase input, using these two potential difference between the characteristicsof close to zero, can get better effect. In the picture shows conditions, the output voltageThe photoelectric element by flux the role of different made from the principle of optical measurement and control system is varied, press the photoelectric element (optical measurement and control system) output nature, namely, can be divided into second analog photoelectric sensor and pulse (switch) photoelectric sensor. Analog photoelectric sensors will be converted into continuous variation of the measure, it is measured optical with a single value relations between analog photoelectric sensor. According to be measured (objects) method detection of target can be divided into transmission (absorption) type, diffuse type, shading type (beam resistance gears) three categories. So-called transmission style means the object to be tested in optical path in constant light source, the light energy through things, part of being measured by absorption, transmitted light onto photoelectric element, such as measured liquid, gas transparency and photoelectric BiSeJi etc; speed.gratifying The so-called diffuse style means the constant light by the light onto the analyte from the object to be tested, and projected onto surfaces reflect on after optoelectronic devices, such as photoelectric colorimetric thermometer and light gauge etc; The so-called shading style means the when illuminant issued by the flux of light analyte covered by a part Jing optoelectronics, make projection on the flux change, change the object to be tested and extent of the position with the light path, such as vibration measurement, the size measurement; And in pulse photoelectric sensor in the sensors, photoelectric element acceptable optical signal is intermittent change, therefore photoelectric element in switch work of the state, the current output it is usually only two steady state of the signal, the pulse form used for photoelectric counting and photoelectric speed measurement and so on.And infrared photoelectric sensor classification and working way generally have thefollowing kinds:1, groove photoelectric sensor put a light emitter and a receiver in a slot face-to-face outfit are on opposite sides of the photoelectric groove. Lighter emits infrared light or visible light, and in unimpeded cases light receptors can receive light. But when tested objects from slot zhongtong obsolete, light occluded, photoelectric switches and action. Output a switch control signal, cut off or connect load current, thus completing a control movement. Groove switch is the overall of detection distance because general structure limits only a few centimeters.2, DuiShe type optoelectronic sensor if you put lighter and receive light is separated, can make the detection distance increase. By a lighter and an inbox light sensor into a photoelectric switch is called DuiShe separate photoelectric switches, referred to DuiShe photoelectric switch. Its detection distance can reach a few meters and even a dozen meters. When using light-emitting device and receive light device are installed in test object through the path of the sides, test object by blocking light path, accept light implement action output a switch control signals.3, reflex plate.it photoelectric switch light-emitting device type and receive light device into the same device inside, in its front pack a reflex plate.the using the reflection principle of complete photoelectric control function is called reflex plate.it reflex (or reflector reflex) photoelectric switch. Under normal circumstances, lighter the light reflected by reflex plate.it is received by accept light; Once the light path be test object to block, accept light, the light is not receive photoelectric switch is action, output a switch control signals.4, diffusion reflective photoelectric switches its detection head with a lighter and also an inbox light ware, but no reflex plate.it ahead. Normally lighter for the light collect light is not found. When test object by blocking the light, and the light reflected light, receive part implement received light signals, output a switch signals.Four, I'm the idea of photoelectric sensorWith the development of science and technology people on measuring accuracy had the higher request, this has prompted the pace with The Times photoelectric sensor have updated, improve the main means photoelectric sensor performance is the application of new materials, new technology manufacturing performance is more superior photoelectric element. For example, today the prototype of the photoelectric sensor is a small metal cylindrical equipment, with a calibration lens, transmitter into receiver focused light, the receiver out of cable to the device got a vacuum tube amplifiers in metal cylinder on the incandescent light bulb inside a small as the light source a strong incandescent lamp sensor. Due to the sensor various defects existing in the fields, gradually faded. To appear, because of it of fiber of excellent performance, then appeared with sensors supporting the use of optical passive components, another fiber without any interference of electromagnetic signal, and can make the sensor of the electronic components and other electrical disturbance in isolation. Have a piece of plastic optical fiber core or glass light core, light outside a metallic core skins and bread this layer metal cortical density lower than light core, so low, the beam refraction in the two materials according to the border (incident Anglewithin a certain range, reflected), is all. Based on optical principle, all beams can be made by optical fiber to transmission. Two incident beam Angle in an Angle (along the fiber length direction within) by multiple reflections from the other end after injection, another incident angles than accept the incident light in metal skin, loss. This accept Angle within the biggest incident Angle than two times, this is because fiber slightly larger from air into density larger fiber materials hitting may have a slight refraction. In light of the optical fiber transmission from inside the influence of fiber bending (whether more than bending radius minimal bending radius). Most optical fiber is flexible, easy to install in the narrow space. Photoelectric sensor is a kind of non-contact measurement small electronic measurement equipment, rely on detect its receives the light intensity change, to achieve measurement purposes, andit's also a vulnerable to external disturbance and lose the measurement accuracy of the device. When be being designed so besides the choice optoelectronic components, still must set GSCC signal and temperature compensating measures used to weaken or eliminate the impact of these factors.Photoelectric sensor must pass a light modulation, like radio waves of light modulation of sends and receives, the radio to a station, can ignore other radio signal sensors without modulation long-focal-length only through the use of mechanical shielded, scenes that receiver transmitter only can receive the emission of light, can make its energy becomes very high. In contrast, through modulation transceivers can ignore ambient light, only to own light or with the same modulation frequencies of light without modulation response. The sensor used to test the infrared rays or around the radiation, if just baked red bottle, in this application situation if use other sensor, may be incorrect actions.Photoelectric sensor due to non-contact, high reliability, etc, and to change in measurement, damage the object to be testedSo since its invention in fields since play a significant role, at present it has been widely used in measuring mechanical quantity, thermal quantity, weight, intelligent vehicle system into etc. Now it in power system automatically grid device plays a very important role, because generator input power grid operation often USES accurate with law, must meet: three-phase line sequence is consistent, frequency, phase agree unanimously, voltage amplitude equal, one of the conditions in system design has been satisfied, after three conditions must also meet to grid, of course, artificially grid is more difficult, photoelectric grid is easier.The development of times, science and technology in the update, photoelectric sensor types are increasing and application domain more and more widely, such as a recent kind of infrared already in intelligent vehicle electrical sensors in to the application, one of which had based on infrared sensor is the core of intelligent vehicle, reflective type infrared sensor using reflex infrared sensor design path detection module and speed monitoring module; Another method based on infrared sensor using the car tracing is to collect infrared sensor data.Photoelectric sensor has cannot be replaced by other sensors superiority, so it development foreground is very good, the application will also become more widespread.光电传感器关键字：光电效应 光电元件 光电特性 传感器分类 传感器应用 摘要：在科学技术高速发展的现代社会中，人类已经入瞬息万变的信息时代，人们在日常生活，生产过程中，主要依靠检测技术对信息经获取、筛选和传输，来实现制动控制，自动调节，目前我国已将检测技术列入优先发展的科学技术之一。
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Research Highlights► A multi-section circuit model for QD-SOA is presented with convergency improved. ► PSPICE simulator guarantees an efficient simulation for the circuit model. ► Pattern effect reduction isinvestigated by this circuit subsystem in detail. 190 Organizational routines, innovation, and flexibility: The application of narrative networks to dynamicworkflow Original Research ArticleInternational Journal of Medical Informatics , In Press,Corrected Proof , Available online 17 February 2011Gillian R. Hayes, Charlotte P. Lee, Paul Dourish Close preview | Related articles |Related reference w ork articles Abstract | Figures/Tables | ReferencesAbstractObjectiveThe purpose of this paper is to demonstrate how current visual representationsof organizational and technological processes do not fully account for thevariability present in everyday practices. We further demonstrate how narrativenetworks can augment these representations to indicate potential areas forsuccessful or problematic adoption of new technologies and potential needsfor additional training.MethodsWe conducted a qualitative study of the processes and routines at a majoracademic medical center slated to be supported by the development andinstallation of a new comprehensive HIT system. We used qualitative dataPurchasecollection techniques including observations of the activities to be supported by the new system and interviews with department heads, researchers, and both clinical and non-clinical staff. We conducted a narrative network analysis of these data by choosing exemplar processes to be modeled, selecting and analyzing narrative fragments, and developing visual representations of the interconnection of these narratives.ResultsNarrative networks enable us to view the variety of ways work has been and can be performed in practice, influencing our ability to design for innovation in use.DiscussionNarrative networks are a means for analyzing and visualizing organizational routines in concert with more traditional requirements engineering, workflow modeling, and quality improvement outcome measurement. This type of analysis can support a deeper and more nuanced understanding of how and why certain routines continue to exist, change, or stop entirely. At the same time, it can illuminate areas in which adoption may be slow, more training or communication may be needed, and routines preferred by the leadership are subverted by routines preferred by the staff.A rticle Outline1. Introduction2. Approaches to representing organizational processes3. Research site and methods: a narrative network analysis of organizational routines at UniHospital3.1. Development of narrative networks3.1.1. Choose a focal phenomenon and define its boundary3.1.2. Choose a point of view3.1.3. Collect narratives and code fragments3.1.4. Relate nodes by sequence4. Introducing two case studies: patient scheduling and chart delivery 4.1. Patient scheduling 4.2. Records management and chart delivery5. Narrative networks in Health IT5.1. “A Broader Range of Possibilities”5.2. Generative routines5.3. Considering multiple viewpoints6. Implications for Health IT6.1. Using narrative networks in practice7. ConclusionAuthors’ contributionsConflict of interest statementAcknowledgementsReferencesResearch highlights► We analyze empirical data from a major medical center using narrative networks . ► Designing for Health IT should include processes that focus on live routines and multiple viewpoints. ► Narrativenetworks provide insight into what can and does happen in organizational routines. ► Narrative networks enable designing for innovation in use.191 Water network design with stochastic optimization approach Original Research ArticleChemical Engineering Research and Design , In Press,Corrected Proof , Available online 15 January 2011Grzegorz Poplewski, Jacek M. Jeżowski, Alina Jeżowska Close preview | Related articles | Related reference w ork articlesPurchaseAbstract | Figures/Tables | ReferencesAbstractWater network (called also water allocation) problem has been addressed in more than 200 papers to date –see recent reviews by Jeżowski (2010) and Foo (2009). Though various solution methods have been developed they all have some limitations. This paper addresses water usage network with regeneration processes. Multiple contaminants and two types of water using processes are taken into regard. Simultaneous one stage optimization method was developed to synthesize the network. In order to solve complex MINLP formulation we propose to apply meta-heuristic optimization – adaptive random search method.The paper contains detailed solution algorithm. Several examples with specific features are solved to show efficiency and flexibility of the approach.A rticle Outline1. Introduction2. WUN superstructure and its optimization model3. Solution algorithm3.1. Mechanism for binary variables3.2. Solution of constraints3.3. Generation of initial point4. Examples of method application4.1. Example 14.2. Example 24.3. Examples 3a and 3b4.4. Example 44.5. Example 55. Performance analysis6. SummaryAcknowledgementsAppendix A. AppendixReferences Research highlights► This paper addresses water usage network with regeneration processes. Multiple contaminants and two types of water using processes are taken into regard. Simultaneous one stage optimization method was developed to synthesize the network . ► Merits of the approach are illustrated by examples that contain design problem with: structural issues, cost function and regeneration processes, fixed load and fixed flow rate water using processes, regeneration recycles elimination, over-constrained feasible region. ► The proposed approach generates solutions that are optimal or a set of near optimal networks. 192 Cost-effective heuristics for planning GMPLS-basedtransport networks Original Research ArticleOptical Sw itching and Networking , Volume 7, Issue 1,January 2010, Pages 12-27Nabil Naas, H.T. Mouftah Close preview | Related articles | Related reference work articlesAbstract | Figures/Tables | ReferencesAbstractWith the ever-increasing traffic in WDM transport networks, the developmentof GMPLS (or multi-granular) transport networks becomes essential to avoidthe cost explosion of OXCs. Much work has been devoted to the developmentof Multi-Granular Optical Crossconnect (MG-OXC) architectures and networkdesign and planning methods. Extending these efforts here, we address a newproblem of planning the GMPLS-based transport network by (1) consideringthe whole traffic hierarchy defined in GMPLS; and (2) allowing the bifurcationof multi-granularity traffic demands among different physical routes. We callPurchasesuch a problem the Routing and Multi-Granular Paths Assignment (RMGPA). The objective of the problem is to minimize the total weighted port count in the transport network. Due to the computational complexity of the problem, only very small-sized planning problems can be solved exactly through Mixed Integer Linear Programming (MILP) optimization. In this paper, we proposeefficient heuristics that are capable of solving large-sized planning problems ina reasonable amount of time.A rticle Outline1. Introduction2. Network architecture2.1. Node architecture2.2. Path types3. Solution of the planning problem3.1. Adjusting traffic demands3.2. Multi-granular virtual topology design3.3. Increasing pass-through segments4. Numerical results4.1. Verification of the heuristic approach4.2. Impact of increasing fiber resources4.3. Why bifurcating all demands is an expensive choice4.4. Heuristics evaluation5. ConclusionsReferences193Forcing technological change: A case of automobileemissions control technology development in theUS Original Research ArticleTechnovation, Volume 30, Issue 4, April 2010, Pages249-264Jaegul Lee, Francisco M. Veloso, David A. Hounshell,PurchaseEdward S. RubinClose preview | Related articles | Related reference w ork articlesAbstract | Figures/Tables | ReferencesAbstractThis article investigates how regulated automakers and upstream component suppliers comply with “technology-forcing” regulations, or laws that set performance standards beyond their usual technological capabilities. In particular, this article examines how firms manage and organize their research and development (R&D) processes concerning automobile emissions control technologies amid the uncertainties resulting from the issuance of new regulations. This study involves the analyses of patents, interviews with experts, references to technical papers published for conferences of the Society of Automotive Engineers (SAE), and use of learning curves. The results of this study show that the high regulatory standards under the technology-forcing regulation played an important role in forcing technological innovations and determining subsequent direction of technological change. Component suppliers were important sources of innovation in the 1970s, but over the course of technological evolution, automakers gradually emerged as the locus of innovation. This study also shows that firms strategically manage architectural and component knowledge in the presence of uncertainties about their technological capacity to meet new auto emissions control standards.A rticle Outline1. Introduction2. Overview of technology-forcing regulations and innovation in auto emissions control2.1. Government regulations2.2. Innovation in automobile emissions control technologies3. Methods 3.1. Data 3.1.1. Patent database3.1.2. Technical publications database3.1.3. Cost database3.2. Expert interviews4.Results4.1. Inventive activities: timing of technology introductions and patenting trend4.2. Sources and the locus of innovation4.2.1. Sources of innovation: the overall picture4.2.2. Locus of innovation and technology evolution4.3. Knowledge management and task uncertainty4.4. Learning by doing4.4.1. Learning in the 1980s5. Discussion and conclusions5.1. Policy and managerial implications5.1.1. Command-and-control type regulation5.1.2. Internal structures of regulations and technological change5.1.3. Technological advances and the sources of innovation5.1.3.1. Science, University, and Technological Change5.1.3.2. Incumbent as the locus of innovation6. Conclusion and future researchAcknowledgementsReferencesVitae194 A multi-objective optimization for green supply chain network design Original Research ArticleDecision Support Systems , In Press, Corrected Proof ,Available online 26 November 2010Fan Wang, Xiaofan Lai, Ning Shi PurchaseClose preview | Related articles | Related reference w ork articlesAbstract | Figures/Tables | ReferencesAbstractIn this paper, we study a supply chain network design problem withenvironmental concerns. We are interested in the environmental investmentsdecisions in the design phase and propose a multi-objective optimizationmodel that captures the trade-off between the total cost and the environmentinfluence. We conduct a comprehensive set of numerical experiments. Theresults show that our model can be applied as an effective tool in the strategicplanning for green supply chain. Meanwhile, the sensitivity analysis providessome interesting managerial insights for firms.A rticle Outline1. Introduction2. Problem definition and modeling3. Solving approach4. Computational experiments4.1. A six-node example4.2. Case study5. ConclusionsAcknowledgementsReferencesVitaeResearch Highlights► We study a supply chain network design problem with environmental considerations. ► We find that supply chain networks with larger capacities exhibits lower total cost and lower CO2emission. ►Consideration of environmental emissions of supply chain network is more effective and necessary at a higher demand level.195 Design of the optical Raman amplifier for the shorestation of NEMO phase 2Original Research ArticleNuclear Instruments and Methods in Physics ResearchSection A: Accelerators, Spectrometers, Detectors and Associated Equipment, Volumes 626-627, Supplement 1,11 January 2011-21 January 2011, Pages S173-S175A. D’Amico and for the NEMO collaborationShow preview | Related articles | Related reference w ork articlesPurchase196 Optically injected logic circuits for remote-poweredsystems on a chip Original Research ArticleComputers & Electrical Engineering, Volume 36, Issue 6, November 2010, Pages 1075-1092Dorin Patru, R. Scott HudsonShow preview | Related articles | Related reference w ork articlesPurchase197 Knowledge absorption of optical technologycompanies in Shanghai, Pudong: Successes, barriersand structural impediments Original Research ArticleApplied Geography, In Press, Corrected Proof,Availableonline 25 February 2011Ingo Liefner, Christian Brömer, Gang ZengShow preview | Related articles | Related reference w ork articlesPurchaseResearch highlights► We examine knowledge absorption in the Optical Technology (OT) industry in Shanghai. ► We pay particular attention to linkage, leverage and learning. ► Shanghai's OT companies aim at establishing linkages with foreign companies. ► The privately owned OT companies lack key resources for leverage and learning. ► Foreign-invested OT companies' learning activities depend on their parent firms.198 Design and development of a data acquisition systemfor photovoltaic modules characterization OriginalResearch ArticleRenew able Energy, Volume 35, Issue 7, July 2010, Pages1484-1492Hocine Belmili, Salah Med Ait Cheikh, Mourad Haddadi,Cherif LarbesPurchaseShow preview | Related articles | Related reference w ork articles199 Personnel selection using analytic network processand fuzzy data envelopment analysisapproaches Original Research ArticleComputers & Industrial Engineering, Volume 59, Issue 4, November 2010, Pages 937-944Hung-Tso LinShow preview | Related articles | Related reference w ork articlesPurchaseResearch highlights►TFN scheme catches the subjectiveness and vagueness of assessments. ► ANP incorporates the evaluation criteria with the staffing philosophy. ► Precision a nd confidence of assessment are considered by using different α values.200 A slender string design for deep-sea neutrinotelescopes Original Research ArticleNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Volumes 626-627, Supplement 1, 11 January 2011-21 January2011, Pages S136-S138E. Heine, E. Berbee, R. de Boer, H. Boer Rookhuizen, J. Hogenbirk, H. Kok, P. Kooijman, A. Korporaal, S. Mos, G. Mul, H. Peek, P. Timmer, E. de Wolf and On behalf of the KM3NeT consortium Show preview | Related articles | Related reference w ork articles。