SE2F100P60S绝缘型快恢复二极管模块
超快恢复二极管SFR08S60T2
8A、600V 快速恢复二极管产品规格分类产品名称 封装形式 打印名称 材料 包装 SFR08S60T2 TO-220-2L SFR08S60T2 无铅料管SFR08S60F2 TO-220F-2L SFR08S60F2 无铅料管SFR08S60D TO-252-2L SFR08S60D 无铅料管SFR08S60DTR TO-252-2L SFR08S60D 无铅编带极限参数参数名称符号参数范围单位反向重复峰值电压VRRM700 V正向平均整流电流IF(AV)8.0 A正向峰值浪涌电流@8.3ms IFSM120 A工作结温范围TJ-50～+150 °C贮存温度范围Tstg-50～+150 °C热阻特性参数名称符号参数范围单位芯片对管壳热阻RθJC2.0 °C/W电气特性参数参数符号最小值典型值最大值单位最大正向电压I F=8.0Amps，T C=25°CV F-- 1.95 2.2 V最大反向漏电流在直流工作电压下，T C=25°C I R-- -- 10.0µA最大反向恢复时间I F=0.5 Amp，I R=1.0Amp，I REC=0.25Ampt rr-- -- 35 ns典型特性曲线封装外形图15.80±0.300.20封装外形图（续）声明：•士兰保留说明书的更改权，恕不另行通知！客户在下单前应获取最新版本资料，并验证相关信息是否完整和最新。
•任何半导体产品特定条件下都有一定的失效或发生故障的可能，买方有责任在使用Silan产品进行系统设计和整机制造时遵守安全标准并采取安全措施，以避免潜在失败风险可能造成人身伤害或财产损失情况的发生！•产品提升永无止境，我公司将竭诚为客户提供更优秀的产品！附：修改记录：日期版本号描述页码原版2010.08.30 1.0修改说明书模板2010.10.20 1.1增加TO-220F-2L封装2011.01.17 1.2修改“极限参数”、“电气特性参数”2011.05.30 1.3增加TO-252-2L封装2011.06.08 1.4。
二极管参数大全
"*" Trr TEST @ IF=1.0A, VR=30V, di/dt=50A /μs "△" Trr TEST @ IF=0.5A, IR=1.0A, Irr=0.25A]The device number listed have a standard tolerance on the nominal Zener voltage of1SS1811S283680100 1.23000.58041SS1841S283880100 1.23000.58041SS1871SS22380100 1.23000.58041SS19080100 1.23000.58041SS1931SS22180100 1.23000.58041SS19680100 1.23000.58041SS2261SS12380100 1.23000.5804BAL99LT170100 1.25100 2.5706BAS116LT175200 1.253000.0575 3.0μS BAS16LT175200 1.253001759BAS19LT1125200 1.256250.112550BAS21LT1250200 1.25625125050BAV70LT170100 1.25200 2.5706BAV74LT150********.1504BAV99LT170100 1.252001706BAV199LT170100 1.25200570 3.0μS BAV170LT170150 1.25200570 3.0μS BAW56LT170200 1.25250 2.5706BAW156LT170200 1.25250 2.570 3.0μS BAS40-04/05/06402001400.2355BAS70-04/05/06702001150.2505BAT54-A/C/S 3020011002255MMBD914LT175200150 2.5754MMBD4148LT17530011005704MMBD2835LT135100 1.21000.1304MMBD2836LT175100 1.21000.1504MMBD2837LT135150 1.21000.1304MMBD2838LT175150 1.21000.1504MMBD6050LT170100 1.12000.1504MMBD6100LT170100 1.12000.1504MMBD7000LT11001001.110031004BZX8 SERIESIcbo (μA)Vcb (V)MIN MAX S9011LT12253030200.128200S9012LT1300-500-40-20-0.160300S9013LT130050040200.160300S9014LT122510040450.1601000SOT-23三极管 SOT-2TYPE PC (mW)IC (mA)Bvcbo(V)oohFEMIN Vdc Max IF mA Max μ A VR Vz=2.4-75V Pw=300mWSOT-23 开关二极管 SOT-23 SWITCHING DIODESTYPE CONCERNED TYPE VRIF m A VF Vdc IRTrr ns "*" Trr TEST @ IF=1.0A, VR=30V, di/dt=50A /μs "△" Trr TEST @ IF=0.5A, IR=1.0A, Irr=0.25A]RU4Z 200270 1.33.510150DO-27S5295G 400130 1.41.05150DO-41S5295J 600130 1.41.05150DO-41TVR4J 600 1.540 1.24.051000SDO-15TVR4N10001.5401.24.051000SDO-151SS1811S283680100 1.23000.58041SS1841S283880100 1.23000.58041SS1871SS22380100 1.23000.58041SS19080100 1.23000.58041SS1931SS22180100 1.23000.58041SS19680100 1.23000.58041SS2261SS12380100 1.23000.5804BAL99LT170100 1.25100 2.5706BAS116LT175200 1.253000.0575 3.0μS BAS16LT175200 1.253001759BAS19LT1125200 1.256250.112550BAS21LT1250200 1.25625125050BAV70LT170100 1.25200 2.5706BAV74LT150********.1504BAV99LT170100 1.252001706BAV199LT170100 1.25200570 3.0μS BAV170LT170150 1.25200570 3.0μS BAW56LT170200 1.25250 2.5706BAW156LT170200 1.25250 2.570 3.0μS BAS40-04/05/06402001400.2355BAS70-04/05/06702001150.2505BAT54-A/C/S 3020011002255MMBD914LT175200150 2.5754MMBD4148LT17530011005704MMBD2835LT135100 1.21000.1304MMBD2836LT175100 1.21000.1504MMBD2837LT135150 1.21000.1304MMBD2838LT175150 1.21000.1504MMBD6050LT170100 1.12000.1504MMBD6100LT170100 1.12000.1504MMBD7000LT11001001.110031004BZX8 SERIESVR SOT-23 开关二极管 SOT-23 SWITCHING DIODESTYPE CONCERNED TYPE VRVz=2.4-75V Pw=300mWMIN Vdc Max IF mA Max μ A IF m A VF Vdc IRTrr nsIcbo (μA)Vcb (V)MIN MAX IC (mA)S9011LT12253030200.1282001S9012LT1300-500-40-20-0.160300-50S9013LT130050040200.16030050S9014LT122510040450.16010001S9015LT1225-100-50-45-0.1601000-1S9016LT12252530200.1282001S9018LT12255030180.1282001S8050LT130050040250.18030050S8550LT1300-500-40-25-0.160300-502SA1015LT1225-150-50-50-0.170400-22SC1815sLT122510060500.19060012SC1815LT122515060500.17070022SC945LT122515060500.1707001MMBT5401LT1300-600-160-150-0.180250-10MMBT5551LT13006001801600.18025010MMBTA42LT13003003003000.18025010MMBTA92LT1300-300-310-305-0.2580250-10TYPE V CBO V V CEO V Ic mA P DmW BCW29LT1-32-32-100225120/2600.4-0.320BCW30LT1-32-32-100225215/5000.4-0.320BCW33LT13020100225420/800 2.0/5.00.2510/0.5BCW60ALT13232100225120/220 2.0/5.00.5550/1.25BCW60BLT13232100225175/310 2.0/5.00.5550/1.25BCW60DLT13232100225380/630 2.0/5.00.5550/1.25BCW61BLT1-32-32-100225140/3100.4-0.5540BCW61CLT1-32-32-100225250/4600.4-0.5540BCW61DLT1-32-32-100225380/6300.4-0.5540BCW65ALT1603280022575/22010/1.00.7500/50BCW68GLT1-60-45-800225120/40010-1.510BCW69LT1-45-100225120/2600.4-0.320BCW70LT1-45-100225215/5000.4-0.320BCW72LT15045100225200/450 2.0/5.00.2510/0.5BC807-16LT1-50-45-500225100/250100-0.710BC807-25LT1-50-45-500225160/400100-0.710BC807-40LT1-50-45-500225250/600100-0.710BC817-16LT15045500225100/250100/1.00.7500/50BC817-25LT15045500225160/400100/1.00.7500/50BC817-40LT15045500225250/600100/1.00.7500/50BC846ALT18065100225110/220 2.0/5.00.6100/5.0BC846BLT18065100225200/450 2.0/5.00.6100/5.0BC847ALT15045100225110/220 2.0/5.00.6100/5.0BC847BLT15045100225200/450 2.0/5.00.6100/5.0BC847CLT15045100225420/8002.0/5.00.6100/5.0SOT-23三极管 SOT-23 TRANSISTORTYPE PC (mW)IC (mA)Bvcbo(V)oohFESOT-23 TRANSISTORS h FEIc/VCE Min/MaxmA/Volts VCE (sat) Max Ic/IBVoltsmAD80-004152500。
SAC2F100P60S快恢复二极管模块
power converters, inverter welders, motor drives and
other applications where switching losses are significant
portion of the total losses.
Package Type & Internal Circuit
Fig. 1. Typical Characteristics: VF vs. IF
July. 2016
Fig. 2. Typical Reverse Recovery Time vs. di/dt
－
Fig. 3. Transientristics (Rth(J-C))
Average Rectified Forward Current
Non-repetitive Peak Surge Current 60Hz Single Half-sine Wave I2t For Fusing 60Hz Sine Wave Maximum Power Dissipation Isolation Voltage @AC 1 Minutes Junction Temperature Storage Temperature Range Mounting Torque (M5) Terminal Torque (M5) Weight
Irr
Reverse Recovery Current
Conditions IF=100A IF=100A, TC=100℃ VR=600V VR=600V, TC=100℃ IF=1A, di/dt=-200A/us
IF=100A, di/dt=-200A/us
Min.
常用稳压二极管的参数规格
常用稳压二极管的参数规格-稳压二极管参数大全[ 来源：不详| 作者：佚名| 时间：2008-3-27 1:17:23 | 浏览：本日：1 本周：24 本月：59 总数：118 ] 常用的稳压二极管常用的国产稳压二极管有2CW系列和2DW系列，常用的国产稳压二极管稳压二极管参数见表4-16和表4-17。
常用的进口稳压二极管有1N41××系列、1N46××系列、1N47××系列、1N52××系列、1N59××系列、1N6××系列、1N700系列、1N900系列、MTZ系列、MTZJ系列、RLZ系列、RLZJ系列及HZ系列、RD系列、05Z系列、PTZ系列、DTZ系列、，常用的进口稳压二极管参数见表4-18~表4-22。
快恢复二极管参数型号品牌电流电压时间极性IN5817GJ1A20V10nsIN5819GJ1A40V10nsIN5819MOT1A40V10nsIN5822MOT3A40V10ns21D-06FUI3A60V10nsSBR360GI3A60V10nsC81-004FUI3A40V10ns8TQ080IR8A80V10ns单管MBR1045MOT10A45V10ns单管MBR1545CTMOT15A45V10ns双管MBR1654MOT16A45V10ns双管16CTQ100IR16A100V10ns双管MBR2035CTMOT20A35V10ns双管MBR2045CTMOT20A45V10ns双管MBR2060CTMOT20A60V10ns双管MBR20100CTIR20A100V10ns双管025CTQ045IR25A45V10ns双管30CTQ045IR30A45V10ns双管C85-009*FUI20A90V10ns双管D83-004*FUI30A40V10ns双管D83-009*FUI30A90V10ns双管MBR4060*IR40A60V10ns双管MBR30045MOT300A45V10ns MUR120MOT1A200V35nsMUR160MOT1A600V35nsMUR180MOT1A800V35nsMUR460MOT4A600V35nsBYV95PHI1.5A1000V250nsBYV27-50PHI2A55V25nsBYV927-100PHI2A100V25nsBYV927-300PHI2A300V25ns BYW76PHI3A1000V200nsBYT56GPHI3A600V100nsBYT56MPHI3A1000V100nsBYV26CPHI1A600V30nsBYV26EPHI1A1000V30nsFR607GI6A1000V200nsMUR8100MOT8A1000V35ns单管HFA15TB60IR15A600V35ns单管HFA25TB60IR25A600V35ns单管MUR30100HAR30A1000V35ns单管MUR30120HAR30A1200V35ns单管MUR1620PHI16A200V35ns双管MUR1620CTMOT16A200V35ns双管MUR1620PMOT16A200V35ns双管MUR1660CTMOT16A600V35ns双管HFA16TA600IR16A600V35ns双管MUR3030GI30A300V35ns双管MUR3040MOT30A400V35ns双管MUR3060MOT30A600V35ns双管HFA30TA600IR30A600V35ns双管MUR20040MOT200A400V35ns双管B92M-02FUI20A200V35ns单管C92-02FUI20A200V35ns双管D92M-02FUI30A200V35ns双管D92M-03FUI30A300V35ns双管DSE130-06DSET30A600V35ns双管DSE160-06DSET60A600V35ns双管原创文章："/public/tool/kbview/kid/686/cid/1" 【请保留版权，谢谢！】文章出自电子元件技术网。
SAC2F100N60S快恢复二极管模块100A600V
Sunnychip reserves the right to change the specifications and circuitry without notice at any time. Sunnychip does not consider
responsibility for use of any circuitry other than circuitry entirely included in a Sunnychip product.
Package Dimensions
5SM-1
July. 2016
－
(Dimensions in Millimeters)
DISCLAIMER: The products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any product can reasonably be expected to result in a personal injury. Seller’s customers using or selling seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller.
Average Rectified Forward Current
普通防反二极管模块MD800A1600V光伏电站可选用
中国·杭州国晶电子科技有限公司中国·杭州国晶电子科技有限公司中国·杭州国晶电子科技有限公司 模块典型电路 电联结形式（右图）模块外型图、安装图M 562使用说明：一、使用条件及注意事项：1、使用环境应无剧烈振动和冲击，环境介质中应无腐蚀金属和破坏绝缘的杂质和气氛。
2、模块管芯工作结温：二极管为-40℃∽150℃；环境温度不得高于40℃；环境湿度小于86%。
3、模块在使用前一定要加装散热器，散热器的选配见下节。
散热可采用自然冷却、强迫风冷或水冷。
强迫风冷时，风速应大于６米∕秒。
二、安装注意事项：1、由于MD防反二极管模块是绝缘型（即模块接线柱对铜底板之间的绝缘耐压大于2.5KV 有效值），因此可以把多个模块安装在同一散热器上，或装置的接地外壳上。
2、散热器安装表面应平整、光滑，不能有划痕、磕碰和杂物。
散热器表面光洁度应小于10μm。
模块安装到散热器上时，在它们的接触面之间应涂一层很薄的导热硅脂。
涂脂前，用细砂纸把散热器接触面的氧化层去掉，然后用无水乙醇把表面擦干净，使接触良好，以减少热阻。
模块紧固到散热器表面时，采用M5或M6螺钉和弹簧垫圈，并以4NM力矩紧固螺钉与模块主电极的连线应采用铜排，并有光滑平整的接触面，使接触良好。
模块工作３小时后，各个螺钉须再次紧固一遍。
模块散热器选择用户选配散热器时，必须考虑以下因素：①模块工作电流大小，以决定所需散热面积；②使用环境，据此可以确定采取什么冷却方式——自然冷却、强迫风冷、还是水冷；中国·杭州国晶电子科技有限公司③装置的外形、体积、给散热器预留空间的大小，据此可以确定采用什么形状的散热器。
一般而论，大多数用户会选择铝型材散热器。
为方便用户，对我公司生产的各类模块，在特性参数表中都给出了所需散热面积。
此面积是在模块满负荷工作且在强迫风冷时的参考值。
下面给出散热器长度的计算公式：模块所需散热面积＝（散热器周长）×（散热器长度）＋（截面积）×２其中，模块所需散热面积为模块特性参数表中给出的参考值，散热器周长、截面积可以在散热器厂家样本中查到，散热器长度为待求量。
SE2F100P60S绝缘型快恢复二极管模块
power converters, inverter welders, motor drives and
other applications where switching losses are
significant portion of the total losses.
SE2F100P60S 600V FRD Module
Ratings 600 480 200 100
1800
13.4* 103 420 2500
-55 ~ +150 -55 ~ +150
1.45 1.45 32.5
Sunnychip Semiconductor Co., Ltd.
1/4
SE2F100P60S: Rev. 00
Unit V V
A
A
A2S W V ℃ ℃ N.m N.m g
Fig. 1. Typical Characteristics: VF vs. IF
Nov. 2016
Fig. 2. Typical Reverse Recovery Time vs. di/dt
－
Fig. 3. Transient Thermal Impedance Characteristics (Rth(J-C))
Conditions IF=100A IF=100A, TC=100℃ VR=600V VR=600V, TC=100℃ IF=1A, di/dt=-200A/us
IF=100A, di/dt=-200A/us
Min.
Typ. Max. Unit
－
-
1.2
1.6
V
-
1.1
-
V
-
-
FOSAN富信电子 二级管 US5AC-US5MC-产品规格书
安徽富信半导体科技有限公司ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.US5A-US5MSMC Super Fast Recovery Diode特快恢复二极管■Features 特点High current capability 高电流能力Low forward voltage drop 低正向压降Super Fast Recovery time 特快恢复时间Surface mount device 表面贴装器件Case 封装:SMC■Maximum Rating 最大额定值(T A =25℃unless otherwise noted 如无特殊说明，温度为25℃)Characteristic 特性参数Symbol 符号US 5A US 5B US 5D US 5G US 5J US 5K US 5M Unit 单位Repetitive Peak Reverse Voltage 重复峰值反向电压V RRM 501002004006008001000V DC Reverse Voltage 直流反向电压V R 501002004006008001000V RMS Reverse Voltage 反向电压均方根值V R(RMS)3570140280420560700V Forward Rectified Current 正向整流电流I F 5A Peak Surge Current 峰值浪涌电流I FSM 120AThermal Resistance J-A 结到环境热阻R θJA 30℃/WJunction/Storage Temperature 结温/储藏温度T J,T stg-50to+150℃℃■Electrical Characteristics 电特性(T A =25℃unless otherwise noted 如无特殊说明，温度为25℃)Characteristic 特性参数Symbol 符号US5A-US5DUS5G US5J-US5MUnit 单位Condition 条件Forward Voltage 正向电压V F 1.01.3 1.7V I F =5A Reverse Current 反向电流I R 10(T A =25℃)200(T A =100℃)µA V R =V RRM Reverse Recovery Time 反向恢复时间Trr 5075nS I F =0.5A,I R =1A Irr=0.25A Junction Capacitance 结电容C J75pFV R =4V,f=1MHzANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.US5A-US5M ■Typical Characteristic Curve典型特性曲线ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.US5A-US5M ■Dimension外形封装尺寸。
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• High Speed & High Power Converters, Inverter Welders • Various Switching and Telecommunication Power Supply • Cutting Machine
Nov. 2016
Description
SOT-227A
Nov. 2016
－
(Dimensions in Millimeters)
DISCLAIMER: The products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any product can reasonably be expected to result in a personal injury. Seller’s customers using or selling seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller.
Fig. 1. Typical Characteristics: VF vs. IF
Nov. 2016
Fig. 2. Typical Reverse Recovery Time vs. di/dt
－
Fig. 3. Transient Thermal Impedance Characteristics (Rth(J-C))
SE2F100P60S
600V FRD Module
Features
• Repetitive Reverse Voltage: VRRM = 600V • Low Forward Voltage: VF(typ.) = 1.2V @ IF=100A • Average Forward Current: IF(AV) =100A @ TC=100℃ • Ultrafast Reverse Recovery Time: trr(typ.) = 110ns • Extensive Characterization of Recovery Parameters • Reduced EMI and RFI • Isolation Type Package • 150℃ Operating Junction Temperature • Built-in Dual FRD Construction
power converters, inverter welders, motor drives and
other applications where switching losses are
significant portion of the total losses.
SE2F100P60S 600V FRD Module
Fig. 4. Forward Current Derating Curve
Sunnychip Semiconductor Co., Ltd.
3/4
SE2F100P60S: Rev. 00
www. sunnychip. com
SE2F100P60S 600V FRD Module
Package Dimensions
I2t PD Viso TJ TSTG
Parameter Repetitive Peak Reverse Voltage DC Blocking Voltage
Average Rectified Forward Current
TC = 25℃ TC = 100℃
Non-repetitive Peak Surge Current 60Hz Single Half-sine Wave
Ratings 0.30
Unit ℃/W
Sunnychip Semiconductor Co., Ltd.
2/4
SE2F100P60S: Rev. 00
www. sunnychip. com
SE2F100P60S 600V FRD Module
Typical Performance Characteristics
Conditions IF=100A IF=100A, TC=100℃ VR=600V VR=600V, TC=100℃ IF=1A, di/dt=-200A/us
IF=100A, di/dt=-200A/us
Min.
Typ. Max. Unit
－
-
1.2
1.6
V
-
1.1
-
V
-
-
0.5
mA
-
-
1
mA
Ratings 600 480 200 100
1800
13.4* 103 420 2500
-55 ~ +150 -55 ~ +150
1.45 1.45 32.5
Sunnychip Semiconductor Co., Ltd.
1/4
SE2F100P60S: Rev. 00
Unit V V
A
A
A2S W V ℃ ℃ N.m N.m g
Sunnychip reserves the right to change the specifications and circuitry without notice at any time. Sunnychip does not consider
responsibility for use of any circuitry other than circuitry entirely included in a Sunnychip product.
is a registered
trademark of Sunnychip Semiconductor Co., Ltd.
Sunnychip Semiconductor Co., Ltd.
4/4
SE2F100P60S: Rev. 00
www. sunnychip. com
www. sunnychip. com
Nov. 2016
SE2F100P60S 600V FRD Module
Electrical Characteristics (Per diode @TC=25 ℃ unless otherwise noted)
Symbol
Parameter
VF
Forward Voltage Drop
Package Type & Internal Circuit
SOT-227A
Equivalent Circuit
Absolute Maximum Ratings (Per diode at TC=25 ℃ unless otherwise noted)
Symbol VRRM VR
IF(AV)
IFSM
IRM
Reverse Leakage Current
trr
Reverse Recovery Time
trr
Reverse Recoerse Recovery Current
trr
Reverse Recovery Time
Irr
Reverse Recovery Current
-
35
-
ns
-
110
150
ns
-
10.4
-
A
-
250
-
ns
IF=100A, di/dt=-200A/us, TC=100℃
-
21.5
-
A
Thermal Characteristics
Symbol Rth (J-C)
Parameter Thermal Resistance, Junction to case
The Fast Recovery Diode module devices are
optimized to reduce losses and EMI/RFI in high
－
frequency power conditioning electrical systems.
The Fast Recovery Diode module is ideally suited for
I2t For Fusing 60Hz Sine Wave Maximum Power Dissipation Isolation Voltage @AC 1 Minutes Junction Temperature Storage Temperature Mounting Torque (M4) Terminal Torque (M4) Weight