Ito Integral; Properties

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ITO 薄膜的微结构及其分形表征

ITO 薄膜的微结构及其分形表征

ITO薄膜的微结构及其分形表征孙兆奇1,吕建国2,蔡琪1,曹春斌1,江锡顺1,宋学萍1(1. 安徽大学物理与材料科学学院,合肥 230039;2. 合肥师范学院物理与电子工程系,合肥 230061)摘 要:采用直流磁控溅射法制备氧化铟锡(ITO)薄膜,用XRD、TEM和分形理论测试和分析了不同退火时间ITO薄膜的微结构。

XRD分析表明:退火时间持续增加,薄膜的晶格常数先减小后略有增大,这是薄膜中Sn4+取代Sn2+导致晶格常数减小和压应力不断释放导致晶格常数增大共同作用的结果。

分形研究表明:分形维数随退火时间的延长先减小后增大,说明薄膜中平均晶粒尺寸先减小后增大,与XRD的研究结果一致。

关键词:无机非金属材料;微结构;分形;氧化铟锡(ITO)薄膜中图分类号:O484文献标识码:A 文章编号:1673-7180(2008)04-0273-5Microstructure and fractal characterization of ITO filmsSUN Zhaoqi1,LU Jianguo2,CAI Qi1,CAO Chunbin1,JIANG Xishun1,SONG Xueping1(1. School of Physics and Material Science, Anhui University, Hefei 230039;2. Department of Physics and Electronic Engineering, Hefei Teachers College, Hefei 230061)Abstract: Indium Tin Oxide (ITO) films, deposited by DC magnetron sputtering, were annealed at 300℃ for different time. Microstructure and morphology of the ITO films are characterized by XRD, TEM and fractal. As the annealing time increasing, the effect of Sn4+ replaceing Sn2+ combined with releasing compression stress induces the lattice constant decrease at first, and increase later. The fractal dimension decreases at first and increased later, revealing that the mean grain size varies with the same way as fractal dimension.Key words: inorganic non-metallic meterial;microstructure;fractal;indium tin oxide (ITO) films氧化铟锡(ITO)薄膜具有可见光的高透过率(>80%)、红外的高反射率、低电阻率(10-3~10-4 Ω·cm)和较宽的能隙(3.6~3.9 eV)等优良的光电特性,是一种性能优异的宽禁带半导体功能薄膜,被广泛地应用于太阳能电池[1]、平板显示器[2]、液晶显示器[3~4]、电致变色显示器、高层建筑物玻璃窗等光电子器件。

NAD_EN1998-1

NAD_EN1998-1
Appendice Nazionale
UNI-EN 1998-1 – Progetto delle strutture in zona sismica, parte 1: Regole generali, azione sismica e regole per edifici. EN 1998-1 Eurocodice 8 – Design of structures for earthquake resistance, Part 1: General Rules, seismic actions and rules for buildings.
Queste decisioni nazionali, relative ai paragrafi sopra citate, devono essere applicate per l’impiego in Italia della UNI-EN-1998-1. 2.2. Documenti normativi di riferimento La presente appendice deve essere considerata quando i si utilizzano tutti i documenti normativi che fanno esplicito riferimento alla UNI-EN-1998-1
Documento sottoposto a inchiesta pubblica - Sito Internet: www.coordinatore.it
3) Decisioni nazionali
Paragrafo
1.1.2(7)
Pagina
Parametro nazionale - valore o prescrizione I due annessi sono mantenuti, L’annesso A, che resta informativo, è recepito integralmente nella espressione dello spettro di risposta elastico in spostamento è illustrata al punto 3.2.2.1(9) E’ recepito anche l’annesso B con una integrazione metodologica, riportata nelle indicazioni aggiuntive.

伊藤对数微分公式积规则

伊藤对数微分公式积规则

伊藤对数微分公式积规则The Ito's lemma is a fundamental concept in stochastic calculus that allows us to calculate the derivative of a stochastic process. It is essential in financial mathematics and plays a vital role in modeling the dynamics of financial assets. 伊藤对数微分公式是随机微分方程中的一个基本概念,可以帮助我们计算随机过程的导数。

它在金融数学中至关重要,对于建模金融资产的动态具有重要作用。

When dealing with stochastic processes, the Ito's lemma provides a way to compute the derivative with respect to time and the underlying Brownian motion. It is particularly useful in situations where the dynamics of the process are influenced by random noise. 当处理随机过程时,伊藤对数微分公式提供了一种计算随时间和基础布朗运动的导数的方法。

在过程的动态受随机噪声影响的情况下,它特别有用。

The Ito's lemma follows a specific rule when dealing with products of stochastic processes. This rule is known as the product rule or the chain rule for stochastic calculus. It allows us to calculate the derivative of the product of two stochastic processes by considering the individual derivatives and their interactions. 当处理随机过程的乘积时,伊藤对数微分公式遵循特定的规则。

stochastic 名词

stochastic 名词

StochasticStochastic is a term commonly used in mathematics, statistics, and finance to describe processes or events that involve randomness or uncertainty. The word “stochastic” is derived from the Greek word “stokhastikos,” meaning “able to guess.”Introduction to StochasticStochastic refers to a system or process that involves random variables and probabilities. Unlike deterministic systems, where the outcome is entirely predictable and certain, stochastic systems incorporate randomness. These systems can be found in various fields such as physics, biology, economics, and computer science.Stochastic ProcessesA stochastic process is a mathematical model that describes theevolution of a system over time. It consists of a collection of random variables indexed by time or another parameter. Each random variable represents the state of the system at a specific time.There are two main types of stochastic processes: discrete-time and continuous-time processes. In discrete-time processes, the state variables change at discrete points in time, while in continuous-time processes, they change continuously over time.Examples of stochastic processes include Brownian motion, Poisson process, Markov chains, and Gaussian processes. These models are widely used to analyze and predict various phenomena such as stock prices, population growth, and particle movement.Stochastic CalculusStochastic calculus is a branch of mathematics that deals with calculus operations on stochastic processes. It provides tools for analyzing the behavior of stochastic models and making predictions based onprobabilistic methods.The two fundamental concepts in stochastic calculus are the Ito integral and Ito’s lemma. The Ito integral extends the concept of Riemann integration to incorporate randomness. It allows us to calculateintegrals with respect to stochastic processes.Ito’s lemma is a formula that relates a function of a stochasticprocess to its differential form. It enables us to derive differential equations involving random variables and solve them using probabilistic methods.Stochastic calculus has applications in various fields, including finance, physics, and engineering. It is widely used in option pricing, portfolio optimization, risk management, and modeling complex systems.Stochastic SimulationStochastic simulation is a technique used to model and analyze systems that involve randomness. It involves generating random variables according to specified probability distributions and using them to simulate the behavior of the system over time.Monte Carlo simulation is a popular stochastic simulation method. It involves running multiple simulations with different sets of random inputs to estimate the distribution of possible outcomes. This technique is widely used in finance, engineering, and scientific research.Stochastic simulation allows us to study the behavior of complex systems that are difficult to analyze analytically. By incorporating randomness into the models, we can capture the inherent uncertainties and make informed decisions based on probabilistic results.Applications of Stochastic ModelsStochastic models find applications in various fields due to theirability to capture randomness and uncertainty. Some common applications include:•Finance: Stochastic models are extensively used in option pricing, risk management, portfolio optimization, and financial forecasting.They help investors and financial institutions make informeddecisions by considering the probabilistic nature of financialmarkets.•Biology: Stochastic models are used to study population dynamics,genetic evolution, epidemiology, and ecological systems. Theyallow scientists to understand how random events affect thebehavior and evolution of biological systems.•Engineering: Stochastic models are employed in reliability analysis, queuing theory, inventory management, and supply chainoptimization. They help engineers design robust systems that canwithstand uncertainties and variations in input parameters.•Computer Science: Stochastic models play a crucial role incomputer simulations, machine learning algorithms, optimizationtechniques, and network analysis. They enable computer scientists to understand complex systems and develop efficient algorithms.ConclusionIn conclusion, stochastic processes provide a powerful framework for modeling and analyzing systems that involve randomness or uncertainty. By incorporating probabilistic methods into mathematical models, we can gain insights into the behavior of complex systems and make informed decisions based on the inherent uncertainties.Stochastic calculus and stochastic simulation techniques further enhance our ability to analyze and predict the behavior of stochastic models. These tools find applications in various fields, including finance, biology, engineering, and computer science.By understanding stochastic processes and utilizing stochastic models, we can better navigate the inherent randomness in our world and make more informed decisions in an uncertain environment.。

TFT制程中高厚度ITO残留因素的研究

TFT制程中高厚度ITO残留因素的研究

TFT制程中高厚度ITO残留因素的研究王灿;陈宁;刘英伟;赵磊;薛大鹏;杜建华;郭炜;王路【摘要】氧化铟锡(ITO)是薄膜晶体管工艺中最常用的透明导电薄膜,随着OLED 技术的发展,ITO作为透明阳极材料也被广泛应用.在高厚度(尤其是大于70 nm)非晶ITO工艺过程中,由于多种因素的影响,很容易产生残留,发生残留后会严重影响产品质量和项目进度.本文通过多次实验测试,综合多种不同厚度,尤其是针对高厚度非晶ITO,分析了TFT制程中影响残留的多种因素,考察重点因素及影响规律,有效地修正工艺条件,为之后的项目和生产过程提供了很好的参考价值.【期刊名称】《液晶与显示》【年(卷),期】2016(031)003【总页数】7页(P276-282)【关键词】薄膜晶体管;非晶氧化铟锡;残留;成膜;刻蚀【作者】王灿;陈宁;刘英伟;赵磊;薛大鹏;杜建华;郭炜;王路【作者单位】京东方科技集团股份有限公司,北京100176;京东方科技集团股份有限公司,北京100176;京东方科技集团股份有限公司,北京100176;京东方科技集团股份有限公司,北京100176;京东方科技集团股份有限公司,北京100176;京东方科技集团股份有限公司,北京100176;京东方科技集团股份有限公司,北京100176;京东方科技集团股份有限公司,北京100176【正文语种】中文【中图分类】TN141.9氧化铟锡(Indium Tin Oxide,简称 ITO)薄膜是宽禁带半导体材料[1],具有高电导率和可见光范围的高透射率,被广泛应用到光电器件中[2]。

ITO薄膜的制备方法有很多,如喷涂、蒸发、射频溅射和磁控溅射等。

随着显示技术的高精细化和大型化的发展,磁控溅射法备受欢迎[3-5]。

在TFT器件制作工艺中[6],ITO工艺顺序为“薄膜沉积—图形化曝光—刻蚀—剥离”,最终形成所需的图形。

ITO根据结晶的状况可以分为非晶ITO(a-ITO)与多晶ITO(poly-ITO)[7-10]。

4.布朗运动与伊藤公式

4.布朗运动与伊藤公式
S k∆ (t ), t = tk , ∆ S (t ) = t − t ∆ t − t ∆ k S k +1 + k +1 S k , tk ≤ t ≤ tk +1. ∆ ∆
S ∆ (t ) is called the path of the random walk.
Distribution of the Path
r −σ 2 / 2 t +σ W ( t )
)
Geometric Brownian Motion cont.-This means the underlying asset price movement as a continuous stochastic process, its logarithmic function is described by the Brownian motion. The underlying asset price S(t) is said to fit geometric Brownian motion. This means: Corresponding to the discrete BTM of the underlying asset price in a riskneutral world (i.e. under the martingale measure), its continuous model obeys the geometric Brownian motion .
Application of Central Limit Them.
Consider limit S (t ) / t as ∆→ 0.
S (t ) 1 t − tk ∆ tk +1 − t ∆ = ∆ S k +1 + ∆ S k t t tk +1 − t k +1 1 t − tk k = ∑ Ri + ∆ ∑ Ri t ∆ i =1 i =1 t − tk = ∆ tk tk k tk − t tk +1 k +1 ∑ Ri + ∑ Ri → X t i =1 ∆ t (k + 1) i =1

ITO处理和封装1

ITO处理和封装1

The property of encapsulation using thin film multi layerfor application to organic light emitting device qKyong Min Kim *,Byung Jo Jang,Whang Sin Cho,Sung Hoo JuR&D Center,ELiA Tech Co.Ltd.,1355-26,Elia Building,Seocho-Dong,Seocho-Gu,Seoul 137-070,South KoreaReceived 30August 2003;accepted 23December 2003Available online 16April 2004AbstractWe have developed a thin film multi layer as encapsulation method for OLED.The characteristics of the OLED encapsulated with thin film multi layer showed the similar OLED with metal cap encapsulation.The I–V–L test of OLED panels with thin film multi layer showed that the brightness is 1000cd/m 2with the efficiency of 7.6lm/W at the 7V and it took more than 2000h for the brightness to fall from 1000to 500cd/m 2.This result shows that the device with thin film multi layer has similar level of brightness and efficiency and more than 95%of lifetime compared to device with metal can encapsulation.Thus,we can confirm that thin film multi layer has an effect as encapsulation process to protect organic light emitting device.Also,thin film multi layer for the pro-tection of organic light emitting device simplifies passivation process,makes less than 0.8mm thick device and is also applicable to wide and flexible display.Ó2004Published by Elsevier B.V.PACS:68;07;73;81Keywords:OLED;Thin film passivation;Shrinkage1.IntroductionAs next generation display,organic light emitting device has great performances such as high brightness,fast response time,wide view angle,thin thickness and low power consumption,so many companies and labo-ratory have been doing research and development in this area.Currently,it is commercialized and equipped in mobile phone and car audio [1].Although its manufac-turing process and structure are quite simple,it is very sensitive to moisture and oxygen which causes emission area decrease and dark spot when it is exposed to the air.In order to prevent these defects,normally,glass or metal cap have been used in the encapsulation process.How-ever,this method cause heavy and expensive device.Especially,when it comes to wide or flexible display,glass or metal cap has its limits of application.In order to overcome these problems,research and development activities for thin film encapsulation process are very popular globally [2].The proposed structure is composed of organic material protection layer (OMPL),planari-zation layer (PL),permeation barrier layer (PBL)and impact protection layer (IPL).So,this paper deals with the performance,shrinkage,luminance and efficiency comparison between device with metal can and device (device/OMPL/PL/PBL and IPL)with thin film passiv-ation layer using inorganic material and polymer [3].2.ExperimentalITO glass having 10X =Ãsurface resistance is used for OLED.Insulator and separator were patterned using photo and wet etching anic layers formed in the order of HIL/HTL/EML/ETL/buffer and Al is used for cathode.In order to make passivation thin film layer to prevent device from damaging by moisture and oxygen,we used PECVD method to deposit inor-ganic materials and also used screen printer for polymer.qOriginal version presented at the 4th International Conference on Electroluminescence of Molecular Materials and Related Phenomena (ICEL4),27–30August 2003,Cheju Island,Korea.*Corresponding author.Tel.:+82-23-01-98-735;fax:+82-23-01-98-800.E-mail address:kkm4330@ (K.M.Kim).1567-1739/$-see front matter Ó2004Published by Elsevier B.V.doi:10.1016/j.cap.2003.11.081Current Applied Physics 5(2005)64–66/locate/capWe used polymer to make the polymer layer using screen printing method and exposed to UV to harden the layer for protection.On the planarization polymer layer,we deposited PBL using PECVD [4,5].In order to measure device shrinkage and luminance in thin film multi layer patterned device,we used TDI instrument and Minolta luminance cs-1000.Also we used Ag 100channel S/W and test jig for lifetime measurement.The device size was 1.94in.and pixel pitch was 80·240l m.The structure of thin film passivation is shown in Fig.1.3.Results and discussionFig.2shows the shrinkage difference between with and without inorganic.The device with only planariza-tion polymer layer (Fig.2(a)),without OMPL,has much more shrinkage device after 10h than the device with OMPL and PL (Fig.2(b)).In case of Fig.2(a),We see some damages of organic materials by outgas from polymer when exposed to UV to harden the layer.Figs.3and 4show the shrinkage of the device with PBL after 500h.There is no shrinkage on the initial device (Fig.3(a))caused by moisture or oxygen yet,but,after 500h under the conditions of constant temperature (65°C)and moisture (99%RH),there is lot of shrinkage on the device (Fig.3(b)).This proves that the mono inorganic layer cannot perfectly protect the device from moisture.Still,the device with 1st inorganic layer (1st IOL)and 2nd inorganic layer (2nd IOL)does not have much of shrinkage after 500h (Fig.4(a),(b)).We could get this improvement of package property to protect the device exposed to oxygen under high temperature by using the semiconductor materials for 2nd inorganic layer.Figs.5and 6are about the life time profile and effi-ciency of both devices with metal can and thin film multi layer consisted of device/OMPL/polymer layer/1st IOL/2nd IOL/polymer layer.Fig.5shows the descending rate of luminance with operation time of thin film passivation device,it shows less effectiveness until 400h than the device with can sealing,but,after 500h,the descending rate decreased.This is because when it is to remain particle in organic material and to lack dopant rateinFig.1.Structure of thin film passivation layer on passive matrix typeOLED.Fig.2.Shrinkage ratio of device (a)without OMPL/polymer layer and (b)with OMPL/polymerlayer.Fig.3.Shrinkage ratio of device/OMPL/polymer layer/1st IOL/poly-mer layer,(a)0h and (b)after 500h.Fig.4.Shrinkage ratio of device/OMPL/polymer layer/1st IOL/2nd IOL/polymer layer,(a)0h and (b)after 500h.K.M.Kim et al./Current Applied Physics 5(2005)64–6665emitting layer.Fig.6shows the efficiency of both the devices with metal can and thin film multi layer.In the result,both devices with thin film passivation and can sealing have similar level of efficiency.Table 1has device specification using thin film and metal can.They have similar level of efficiency,but thedevice with thin film has 50%thinner and 45.4%lighter than the one with the metal can.Fig.7compares monochrome,384·160resolution panel device covered with thin film multi layer and the same device with metal can.Fig.8is monochrome de-vice with thin film passivation in Fig.7.4.ConclusionsFrom this test and experiment,we developed more economic and effective packing process,which is thin film multi layer passivation to optimize OLED packing condition and applicable to flexible and wide display using polymer layer,inorganic layer and metal layer on device,than metal can encapsulated device.Further-more,it is possible to find several ways to improve efficiency using various materials to evaporate.References[1]C.W.Tang,S.A.Vanslyke,Appl.Phys.Lett.51(1987)912.[2]G.Gu,P.E.Burrows,S.Venkatesh,S.R.Forrest,Opt.Lett.22(1997)172.[3]L.Pawlowski,The Science and Engineering of Thermal SprayCoatings,John Wiley &Sons Ltd,1995.[4]H.Kubota,S.Miyaguchi,S.Ishizuka,T.Wakimoto,J.Funaki,Y.Fukuda,T.Watanabe,I.Oshita,T.Thoma,J.Lumin.87–89(2000)56.[5]A.S.da S.Sobrinho,treche,Czeremuszkin,J.E.Klemberg-Sapieha,M.R.Wertheimer,J.Vac.Sci.Technol.A 16(6)(1998)3190.Fig.5.Luminance vs.time of unit device with thin film passivation and cansealing.Fig.6.Efficiency vs.voltage of unit device with thin film passivation and can sealing.Table 1Specification of the 128DeviceThin film multi layerMetal canSize1.94in.Resolution 384·160Pixel pitch 80·240l m Supply voltage DC 7V Efficiency 7.6lm/w 8.1lm/w Total device 0.81.6thickness(Glass:0.7)(Glass:0.7)Weight (except IC)4.05g7.42gFig.7.Device picture of (a)metal can and (b)thin filmpassivation.Fig.8.Eliatech monochrome display with thin film passivation.66K.M.Kim et al./Current Applied Physics 5(2005)64–66。

伊藤引理

伊藤引理
The formal expression (1) is meant to be a simply way to express the integral relations. Integrate both sides over the time integral [T1, T2]. From the left side of (1) you get
where
u(XT , T ) − u(X0, 0) = ∆uk ,
tk <T
∆uk = u(Xk + ∆Xk, tk + ∆t) − u(Xk, tk) , ∆Xk = Xk+1 − Xk .
The Taylor expansion is
∆uk
=
∂x uk ∆Xk
+
1 2
∂x2uk
(∆Xk )2
+
3
≤ C∆t 2 .
2
up the terms (∆X)2 and adding up the terms v(Xt)∆t have the same limit as ∆t → 0. Both of these arguments use ideas from Lesson 3 and Assignment 3.
There also is an application of Borel Cantelli to show that the arguments are
∂t uk ∆t
+ O(|∆Xk|3) + O(∆t |∆Xk|) + O(∆t2) .
We sum over k. On the left side we get u(XT , t) − u(X0, 0). There are six sums on the right to consider.
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LECTURE 13. INTEGRATION
3
Hale Waihona Puke Now we return to proving the proposition. We have using the lemma above and Ito isometry
2 E[(IT (Xm ) − IT (Xn ))2 ] = E[IT (Xm − Xn )] � T = E[ (Xm (t) − Xn (t))2 dt] 0 � T � T 2 ≤ 2E[ (X (t) − Xm (t)) dt] + 2E[ (X (t) − Xn (t))2 dt]. 0 0
� Now, given a process X ∈ H 2 , we fix any sequence of simple processes Xn ∈ S 2 which satisfies (13.1). Recall, that we already have defined Ito integral for simple processes IT (Xn ). Proposition 2. Suppose a sequence of simple processes Xn ∈ S 2 satisfies (13.1). Then the sequence of random variables IT (Xn ) is Cauchy. Proof. We begin by establishing the following simple result, which incidently holds for every two simple processes. Lemma 13.2. Ito integral defined for simple processes is a linear functional: for every m,n (13.3) IT (Xm ) − IT (Xn ) = IT (Xm − Xn ).
∈ H satisfying � T
1 1 2 E[ (Xn (t) − Xn (t))2 dt] ≤ . n 0
3 Finally, applying Proposition 1 from Lecture 12, for each n there exists a simple process Xn ∈ H2 satisfying � T 1 2 3 E[ (Xn (t) − Xn (t))2 dt] ≤ . n 0


j
a2 j
+

j<k
2 (a2 j + ak )
=3 Combining, we conclude

j
a2 j.
� T 9 3 E[ (X (t) − Xn (t))2 dt] ≤ . n 0
3 We have constructed a sequence Xn (t) ∈ S 2 of processes such that � T 3 lim E[ (X (t) − Xn (t))2 dt] = 0. n 0
0
Proof. We need to prove the consistency of the Ito integral definition. Namely, that such a limiting random variable exists and does not depend on the choice of the sequence Xn . We have established in Proposition 1, the existence of a sequence Xn satisfying (13.1). We have established in Proposition 2 that the sequence IT (Xn ) is Cauchy. Applying Theorem 12.3 from Lecture 12 (Completeness of L2 ), there exists a unique (up to measure zero sets) random variable which is the L2 limit of IT (Xn ). � Now we need to establish uniqueness. Namely, if Xn is another sequence satisfying (13.1), � then the unique limit of the sequence IT (Xn ) is the same as that of the sequence IT (Xn ). Problem 1. Let IT (X ) be a limit of IT (Xn ) along some sequence of simple processes Xn ∈ S 2 satisfying (13.1). Establish that IT (X ) satisfies Ito isometry: � T 2 X 2 (t)dt]. E[IT (X )] = E[
n
We write � IT (X ) =
0 T
� X (t)dB (t) =
0
T
X (t, ω )dB (t, ω ).
Theorem 13.5. Ito integral is well defined. That is the L2 limit of IT (Xn ) exists and does not depend on the choice of the sequence satisfying (13.1). Moreover, Ito integral satisfies Ito isometry � T 2 E[IT (X )] = E[ X 2 (t)dt].
Advanced Stochastic Processes.
David Gamarnik
LECTURE 13 Ito integral. Properties
Lecture outline
• Definition of Ito integral • Properties of Ito integral
But since the sequence Xn satisfies (13.1), the assertion of the proposition holds. Now we can formally state the definition of Ito integral.

Definition 13.4 (Ito integral). Given a stochastic process X ∈ H 2 and T > 0, its Ito integral IT (X ) is defined to be the L2 limit of random variables IT (Xn ), where Xn ∈ S 2 is any sequence of simple processes satisfying (13.1). Namely, IT (X ) is the unique random variable satisfying lim E[(IT (X ) − IT (Xn ))2 ] = 0.
j ≤r −1
=

j ≤r −1
Xm (tj )(B (tj +1 ) − B (tj )) −

j ≤r −1
Xn (tj )(B (tj +1 ) − B (tj ))
Observe, however, that � Xm (tj )(B (tj +1 ) − B (tj )) =
j ≤r −1
0
Using this finish the proof of the theorem, by establishing the uniqueness of the limit. �
4
D. GAMARNIK, 15.070
13.2. Ito integral. Properties
13.2.1. Simple examples Let us compute the Ito integral for a special case X (t) = B (t). We will do this directly from the definition. Later on we will develop calculus rules for computing the Ito integral for many interesting cases. We fix a sequence of partitions Πn : 0 = t0 < · · · < tn = T and consider Bn (t) = B (tj ), t ∈ [tj , tj +1 ). Assume that limn Δ(Πn ) = 0. We first show that this is sufficient for having � T (13.6) lim E[ (B (t) − Bn (t))2 dt] = 0.

j ≤r(m)−1
Xm (t1 j )(B (tj +1 ) − B (tj )),
because the term corresponding to tj between the points of partition Π1 contributes zero. Similar � assertion holds for Xn with respect to partition Π2 . We conclude that (13.3) holds.
n 0
Proof. Given any large n > 0, by Proposition 3 from Lecture 12, there exists a bounded process 1 2 Xn
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