PMBT3904D
PMBT3906中文资料
IMPORTANT NOTICEDear customer,As from October 1st, 2006 Philips Semiconductors has a new trade name-NXP Semiconductors,which will be used in future data sheets together with new contactdetails.In data sheets where the previous Philips references remain,please use the new links asshown below. use use (Internet)sales.addresses@ use salesaddresses@(email)The copyright notice at the bottom of each page (or elsewhere in the document,depending on the version)- © Koninklijke Philips Electronics N.V . (year). All rights reserved -is replaced with:- © NXP B.V . (year). All rights reserved. -If you have any questions related to the data sheet, please contact our nearest salesoffice via e-mail or phone (details via salesaddresses@). Thank you for yourcooperation and understanding,NXP SemiconductorsPMBT3906PNP switching transistorRev. 05 — 4 October 2007Product data sheetPNP switching transistor PMBT3906FEATURES•Collector current capability I C=−200mA •Collector-emitter voltage V CEO=−40V.APPLICATIONS•General amplification and switching.DESCRIPTIONPNP switching transistor in a SOT23 plastic package. NPN complement: PMBT3904.MARKINGNote1.∗=p: Made in Hong Kong.∗=t: Made in Malaysia.∗=W: Made in China.QUICK REFERENCE DATA PINNINGTYPE NUMBER MARKING CODE(1) PMBT3906∗2A SYMBOL PARAMETER MAX.UNIT V CEO collector-emitter voltage−40VI C collector current (DC)−200mAPIN DESCRIPTION1base2emitter3collectorhandbook, halfpage213MAM256Top view231Fig.1 Simplified outline (SOT23) and symbol.ORDERING INFORMATIONTYPE NUMBERPACKAGENAME DESCRIPTION VERSIONPMBT3906−plastic surface mounted package; 3leads SOT23PNP switching transistor PMBT3906LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC60134).SYMBOL PARAMETER CONDITIONS MIN.MAX.UNIT V CBO collector-base voltage open emitter−−40VV CEO collector-emitter voltage open base −−40VV EBO emitter-base voltage open collector−−6VI C collector current(DC)−−200mAI CM peak collector current−−200mAI BM peak base current−−100mAP tot total power dissipation T amb≤25°C; note1−250mWT stg storage temperature−65+150°CT j junction temperature−150°CT amb operating ambient temperature−65+150°C Note1.Transistor mounted on an FR4 printed-circuit board.THERMAL CHARACTERISTICSSYMBOL PARAMETER CONDITIONS VALUE UNITR th(j-a)thermal resistance from junction to ambient note1500K/W Note1.Transistor mounted on an FR4 printed-circuit board.PNP switching transistor PMBT3906CHARACTERISTICST amb=25°C unless otherwise specified.SYMBOL PARAMETER CONDITIONS MIN.MAX.UNIT I CBO collector cut-off current I E=0; V CB=−30V−−50nAI EBO emitter cut-off current I C=0; V EB=−6V−−50nAh FE DC current gain V CE=−1V; see Fig.2I C=−0.1mA60−I C=−1mA80−I C=−10mA100300I C=−50mA60−I C=−100mA30−V CEsat collector-emitter saturationvoltage I C=−10mA; I B=−1mA−−250mV I C=−50mA; I B=−5mA−−400mVV BEsat base-emitter saturation voltage I C=−10mA; I B=−1mA−−850mVI C=−50mA; I B=−5mA−−950mV C c collector capacitance I E=i e=0; V CB=−5V;f=1MHz− 4.5pF C e emitter capacitance I C=i c=0; V EB=−500mV;f=1MHz−10pFf T transition frequency I C=−10mA; V CE=−20V;f=100MHz250−MHzF noise figure I C=−100µA; V CE=−5V;R S=1kΩ; f=10Hz to15.7kHz−4dB Switching times (between 10% and 90% levels);see Fig.7t d delay time I Con=−10mA; I Bon=−1mA;I Boff=1mA −35nst r rise time−35ns t s storage time−225ns t f fall time−75nsPNP switching transistor PMBT3906handbook, halfpage 0400600200MHC459−10−1−1−10I C (mA)h FE−102−103(1)(3)(2)Fig.2 DC current gain; typical values.V CE =−1V.(1)T amb =150°C.(2)T amb =25°C.(3)T amb =−55°C.handbook, halfpage 0−10−2500−50−100−150−200−2V CE (V)I C (mA)−4−6−8MHC460(1)(2)(3)(9)(7)(10)(8)(6)(5)(4)Fig.3Collector current as a function of collector-emitter voltage.(1)I B =−1.5mA.(2)I B =−1.35mA.(3)I B =−1.2mA.(4)I B =−1.05mA.(5)I B =−0.9mA.(6)I B =−0.75mA.(7)I B =−0.6mA.(8)I B =−0.45mA.(9)I B =−0.3mA.(10)I B =−0.15mA.T amb =25°C.handbook, halfpage −200−1200−400−600−800−1000MHC461−1−10−1I C (mA)V BE(mV)−10−102−103(3)(2)(1)Fig.4Base-emitter voltage as a function ofcollector current.V CE =−1V.(1)T amb =−55°C.(2)T amb =25°C.(3)T amb =150°C.handbook, halfpage −200−1200−400−600−800−1000MHC462−1−10−1I C (mA)V BEsat (mV)−10−102−103(1)(3)(2)Fig.5Base-emitter saturation voltage as a function of collector current.I C /I B =10.(1)T amb =−55°C.(2)T amb =25°C.(3)T amb =150°C.PNP switching transistor PMBT3906handbook, halfpage −103−102−10MHC463−10−1−1−10I C (mA)V CEsat(mV)−102−103(1)(2)(3)Fig.6Collector-emitter saturation voltage as afunction of collector current.I C /I B =10.(1)T amb =25°C.(2)T amb =150°C.(3)T amb =−55°C.handbook, full pagewidth R C R2R1DUTMGD624V o R B(probe)450 Ω(probe)450 Ωoscilloscopeoscilloscope V BB V iV CCFig.7 Test circuit for switching times.V i =5V; T =500µs; t p =10µs; t r =t f ≤3ns.R1=56Ω; R2=2.5k Ω; R B =3.9k Ω; R C =270Ω.V BB =1.9V; V CC =−3V.Oscilloscope: input impedance Z i =50Ω.PNP switching transistorPMBT3906PACKAGE OUTLINE UNITA 1max.b p c D E e 1H E L p Q w v REFERENCES OUTLINEVERSIONEUROPEAN PROJECTION ISSUE DATE 97-02-2899-09-13IEC JEDEC EIAJ mm 0.10.480.380.150.09 3.02.8 1.41.20.95e 1.9 2.52.10.550.450.10.2DIMENSIONS (mm are the original dimensions)0.450.15 SOT23TO-236AB b p D e 1e AA 1L p Qdetail X H E E w M v M AB A B 012 mmscale A 1.10.9cX123Plastic surface mounted package; 3 leads SOT23Legal informationData sheet status[1]Please consult the most recently issued document before initiating or completing a design.[2]The term ‘short data sheet’ is explained in section “Definitions”.[3]The product status of device(s)described in this document may have changed since this document was published and may differ in case of multiple devices.The latest product statusinformation is available on the Internet at URL .DefinitionsDraft —The document is a draft version only. The content is still underinternal review and subject to formal approval, which may result inmodifications or additions. NXP Semiconductors does not give anyrepresentations or warranties as to the accuracy or completeness ofinformation included herein and shall have no liability for the consequences ofuse of such information.Short data sheet —A short data sheet is an extract from a full data sheetwith the same product type number(s)and title.A short data sheet is intendedfor quick reference only and should not be relied upon to contain detailed andfull information. For detailed and full information see the relevant full datasheet, which is available on request via the local NXP Semiconductors salesoffice. In case of any inconsistency or conflict with the short data sheet, thefull data sheet shall prevail.Disclaimers General —Information in this document is believed to be accurate and reliable.However,NXP Semiconductors does not give any representations or warranties,expressed or implied,as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.Right to make changes —NXP Semiconductors reserves the right to make changes to information published in this document, including withoutlimitation specifications and product descriptions, at any time and withoutnotice.This document supersedes and replaces all information supplied priorto the publication hereof.Suitability for use —NXP Semiconductors products are not designed,authorized or warranted to be suitable for use in medical, military, aircraft,space or life support equipment, nor in applications where failure or malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage.NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.Applications —Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.Limiting values —Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134)may cause permanent damage to the device.Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability.Terms and conditions of sale —NXP Semiconductors products are soldsubject to the general terms and conditions of commercial sale,as publishedat /profile/terms , including those pertaining to warranty,intellectual property rights infringement and limitation of liability, unlessexplicitly otherwise agreed to in writing by NXP Semiconductors. In case ofany inconsistency or conflict between information in this document and suchterms and conditions, the latter will prevail.No offer to sell or license —Nothing in this document may be interpretedor construed as an offer to sell products that is open for acceptance or thegrant,conveyance or implication of any license under any copyrights,patentsor other industrial or intellectual property rights.Trademarks Notice:All referenced brands,product names,service names and trademarks are the property of their respective owners.Contact informationFor additional information, please visit:For sales office addresses, send an email to:salesaddresses@ Document status [1][2]Product status [3]Definition Objective [short] data sheetDevelopment This document contains data from the objective specification for product development.Preliminary [short] data sheetQualification This document contains data from the preliminary specification.Product [short] data sheetProduction This document contains the product specification.© NXP B.V .2007.All rights reserved.For more information, please visit: For sales office addresses, please send an email to: salesaddresses@Date of release: 4 October 2007Document identifier: PMBT3906_N_5Please be aware that important notices concerning this document and the product(s)described herein, have been included in section ‘Legal information’.Revision historyTable 1.Revision history Document ID Release date Data sheet status Change notice Supersedes PMBT3906_N_520071004Product data sheet -PMBT3906_4Modifications:•Marking code corrected (page 2)PMBT3906_4(939775012535)20040121Product specification-PMBT3906_3PMBT3906_3(939775005816)19990427Product specification-PMBT3906_2PMBT3906_CNV_2(939775002091)19970505Product specification --。
Component物料标识信息鉴别方法
Component物料标识信息鉴别方法1，知识概要AE物料基本可以分为定制件和标准件，并且基本可以通过AE的编码系统看出来。
定制件：由AE的工程设计的物料，AE的物料名称和制造商的物料名称一致。
例如：AE的物料名称Part Num和制造商的物料名称Mfg P/N都是4831194例如：AE的物料名称Part Num和制造商的物料名称Mfg P/N都是2106866-00标准件：由制造商的工程设计的物料，AE的物料名称和制造商的物料名称不一致。
例如：AE的物料名称Part Num为3581005，而制造商的物料名称Mfg P/N根据不同的制造商会有不同。
物料包装请模仿原包装方式进行包装，注意ESD防护，MSL等标识需要按照包装要求进行包装。
2，如何寻找实际物料的MFG，MPN， Date code信息2.1，通过AE的系统获得该物料的MFG，MPN Ptools> component engineer>输入AE的Part number：2.2 对照所获得的MFG，MPN信息表格，进行确认如下流程图2.3 物料信息确认案例案例 1：有些标签90%以上的MFG/MPN信息一样，只是有些字母的区别，基本是对的信息，可以确认MFG/MPN与物料信息表最相近的信息案例 2：有些物料看到AE的PartNum和Mfg P/N是一致的，基本就属于AE的定制件案例 3：有些物料外大包装箱看不到，就看看箱子里面的小包装，然后找标签查看字母数字等和物料信息表接近或一致的信息，如果找到MPN，而看不到MFG，那么信息表里面对应的MFG就是所需的信息。
案例 4：有些物料需要看实物的丝印标识，从而找到信息。
有些MFG信息是简写，主要信息和物料信息表中一样，比如FOX显示在实物丝印上代表FOX ELECTRONICS。
案例 5：有些物料只有MFG，物料标签上只看到AE的Part number，而且是供应商的原始标签，看不到MPN和Date code信息。
贴片二极管
贴片二极管、三极管丝印参照代码：物料编码厂商厂家型号丝印代码品名参数备注R26040134T11 or *T3 稳压二极管/0.225W/2.4V/SOT-23 NXP BZX48-C2V4，215ON LBX48C2V4LT1GLRC BX48C2V4LT1GR26040050NXP BZX48-C3V9，215Z16 or *B3稳压二极管/0.225W/3.9V/SOT-23 ON BZX48C3V9LT1GLRC LBZX48C3V9LT1GZ17 or *B6稳压二极管/0.225W/4.3V/SOT-23 NXP BZX48-C4V3，215ON BZX48C4V3LT1GLRC LBZX48C4V3LT1GR26040046Z1* 稳压二极管/0.225W/4.7V/SOT-23 NXP BZX48-C4V7,215ON BZX48C4V7LT1GLRC LBZX48C4V7LT1GR26040024NXP BZX48-C5V1,215Z2* 稳压二极管/0.225W/5.1V/SOT-23 ON BZX48C5V1LT1GLRC LBZX48C5V1LT1GR26040051Z3* 稳压二极管/0.225W/5.6V/SOT-23 NXP BZX48-C5V6,215ON BZX48C5V6LT1GLRC LBZX48C5V6LT1GR26040065NXP BZX48-C6V2,215Z4* 稳压二极管/0.225W/6.2V/SOT-23 ON BZX48C6V2LT1GLRC LBZX48C6V2LT1GZ5* 稳压二极管/0.225W/6.8V/SOT-23R26040052NXP BZX48-C6V8,215ON BZX48C6V8LT1GLRC LBZX48C6V8LT1GZ6* 稳压二极管/0.225W/7.5V/SOT-23R26040053NXP BZX48-C7V5,215ON BZX48C7V5LT1GLRC LBZX48C7V5LT1GZ7* 稳压二极管/0.225W/8.2V/SOT-23 NXP BZX48-C8V2,215R26040054ON BZX48-C8V2LT1GLRC LBZX48C8V2LT1GZ8* 稳压二极管/0.225W/9.1V/SOT-23R26040055NXP BZX48-C9V1,215ON BZX48C9V1LT1GLRC LBZX48C9V1LT1GZ9* 稳压二极管/0.225W/10V/SOT-23R26040140NXP BZX48-C10,215ON BZX48C10LT1GLRC LBZX48C10LT1GNXP BZX48-C11,215R26040056Y1* 稳压二极管/0.225W/11V/SOT-23 ON BZX48C11LT1GLRC LBZX48C11LT1GR26040045NXP BZX48-C12,215Y2* 稳压二极管/0.225W/12V/SOT-23 ON BZX48C12LT1GLRC LBZX48C12LT1GR26040057Y3* 稳压二极管/0.225W/13V/SOT-23 NXP BZX48-C13,215ON BZX48C13LT1GLRC LBZX48C13LT1GY4* 稳压二极管/0.225W/15V/SOT-23R26040062NXP BZX48-C15,215ON BZX48C15LT1GLRC LBZX48C15LT1GR26040048Y5* 稳压二极管/0.225W/16V/SOT-23 NXP BZX48-C16,215ON BZX48C16LT1GLRC LBZX48C16LT1GR26040025NXP BZX48-C18,215Y6* 稳压二极管/0.225W/18V/SOT ON BZX48C18LT1GLRC LBZX48C18LT1GY7* 稳压二极管/0.225W/20V/SOT R26040105NXP BZX48-C20,215ON BZX48C20LT1GLRC LBZX48C20LT1GR26040058NXP BZX48-C22,215Y8* 稳压二极管/0.225W/22V/SOT ON BZX48C22LT1GLRC LBZX48C22LT1GY9* 稳压二极管/0.225W/24V/SOT R26040044NXP BZX48-C24,215ON BZX48C24LT1GLRC LBZX48C24LT1GY10 or *T2稳压二极管/0.225W/27V/SOT R26040059NXP BZX48-C27,215ON BZX48C27LT1GLRC LBZX48C27LT1GY11 or *T5稳压二极管/0.225W/30V/SOT NXP BZX48-C30,215R26040132ON BZX48C30LT1GLRC LBZX48C30LT1GY12 or *T6稳压二极管/0.225W/33V/SOT R26040139NXP BZX48-C33,215ON BZX48C33LT1GLRC LBZX48C33LT1GY13 or *T7稳压二极管/0.225W/36V/SOT R26040063NXP BZX48-C36,215ON BZX48C36LT1GLRC LBZX48C36LT1GNXP BAT54L4*ON BAT54LT1G L4* R26030030LRC LBAT54LT1G L4* 肖特基二极管/30V/200mA/290mW/SOT-23/SC 专用NXP BA V70 ON BA V70LT1G R26010012 LRC LBA V70LT1GA4*普通二极管/70V/200mA/1.0V/共阴/SOT-23NXP BA V99 ON BA V99LT1G LRC LBA V99LT1G R26010005A7* 普通二极管/70V/715mA/1.75V/双串联/SOT-23NXP PMBT3904 *1A 3904LT 1AMON MMBT3904LT1G LRC LMBT3904LT1G*1A LMBT3904TT MA R26080001 LMBT3904WT AM小信号三极管/NPN/40V/200mA/SOT-23NXP PMBT3906ON MMBT3906LT1G LRC LMBT3906LT1G*2ALMBT3906TT 2A R26080002LMBT3906DW A2小信号三极管/PNP/-40V/-200mA/SOT-23NXP PMBT4401ON MMBT4401LT1G R26080003LRC LMBT4401LT1G2X小信号三极管/NPN/40V/600mA/SOT-23NXP PMBT4403ON MMBT4403LT1G R26080004LRC LMBT4403LT1G2T小信号三极管/PNP/-40V/-600mA/SOT-23R25020098 ON OB226MMP GM944 PWM 电源芯片/OB226MMP/SOT-26 代码后三位与周期变化 R25020032 ON OB2262MP 62A21 PWM 电源芯片/OB2262MP/SOT-26 代码后三位与周期变化 R26010142 NXP 35200M/BAS16H A1 开关二极管/100V/215mA/4ns/SOD123F4R26010026 Diodes 1N4148W-7-F R26010070B PANJIT LL4148 T4SMD 二极管/75V/0.15A/1V/LL-34LRC LBAS40LT1G R26030069 ON BAS40LT1G B1肖特基二极管/40V/0.1A/0.60V/SOT-23LRC LBAT54LT1G JV3 NXP BAT54 R26030030ON BAT54LT1G L4W 肖特基二极管/30V/200mA/290mW/SOT-23/SCLRC LMBD7000LT1GNXP PMBD7000R26010030ON MMBD7000LT1G M5C开关二极管/100V/200mA/1.1V/串联/SOT-23LRC LBAS16LT1GON BAS16LT1GR26010099VISHAY BAS16-V-GS08 A6开关二极管/75V/200mA/6ns/SOT-23LRC LMBD914LT1GON MMBD914LT1G R26010011NXP PMBD914 5D普通二极管/100V/200mA/1.0V/SOT-23备注：*号表示制造产地*=P：香港制造*=T：马来西亚*=W：中国制造。
N沟道和P沟道MOSFET开关电路
N 沟道和P 沟道MOS FET 开关电路
在电路中常见到使用M O S FET 场效应管作为开关管使用。
下面举例进行说明。
图1
如图1所示，使用了P 沟道的内置二极管的电路，此处二极管的主要作用是续流作用，电路是Li 电池充放电电路，当外部电源断开时采用L i 电池进行内部供电，即+5V 电源断开后Q1的G 极为低电平，S 极和D 极导通，为系统供电。
图中D2和D 3的一方面是降压的作用，使5V 降为4V （D2为锗管压降为0.2V ，D3硅管压降为0.7V ）。
图2
图2 工作原理同图1，也使用了内置续流二极管的P 沟道C O MS FET 。
Q3
图3
图3使用了内置续流二极管的N 沟道的COM S FET 。
此电路是应用于开关时序的，当3.3V_SB 为低电平时Q 18、Q19不导通，5V 时钟数据转3.3V 时钟数据不导通；当3.3V_SB 为高电平时5V 时钟数据转3.3V 时钟数据。
3V_SDA_MST
3V_SCL_MST
2SK1399
2SK1399。
2N3904三极管规格书
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors2N3904TRANSISTOR (NPN)FEATURE z NPN silicon epitaxial planar transistor for switching and Amplifier applications z As complementary type, the PNP transistor 2N3906 is Recommendedz This transistor is also available in the SOT-23 case withthe type designation MMBT3904MAXIMUM RATINGS (T a =25℃ unless otherwise noted)ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified)ParameterSymbol Test conditionsM inT yp M ax U nitCollector-base breakdown voltage V (BR)CBO I C =10μA, I E =0 60 VCollector-emitter breakdown voltage V (BR)CEO I C = 1mA , I B =0 40 VEmitter-base breakdown voltage V (BR)EBO I E = 10μA, I C =0 6 VCollector cut-off current I CBO V CB =60V, I E =0 0.1 μACollector cut-off current I CEO V CE = 40V, I B =0 0.1 μAEmitter cut-off current I EBO V EB = 5V, I C =0 0.1 μAh FE1 V CE =1V, I C =10mA 100 400h FE2 V CE =1V, I C =50mA 60DC current gainh FE3V CE =1V, I C =100mA 30Collector-emitter saturation voltage V CE(sat) I C =50mA, I B =5mA 0.3 VBase-emitter saturation voltage V BE(sat) I C =50mA, I B =5mA 0.95V Transition frequency f TV CE =20V,I C =10mA,f =100MHz 300MH ZDelay Time t d 35 ns Rise Time t r V CC =3V,V BE =0.5V, I C =10mA,I B1=1mA 35 nsStorage Time t s 200 ns Fall Timet fV CC =3V, I C =10mAI B1=I B2=1mA50 nsCLASSIFICATION OF h FE1Rank O Y GRange100-200 200-300 300-400TO-921. EMITTER2. BASE3. COLLECTOR【南京南山半导体有限公司 — 长电三极管选型资料】010020030040050060070010010001010010000.111030T R A N S I T I O N F R E Q U E N C Y f T (M H z )COLLECTOR CURRENT I C (mA)C O L L E C T O R P O W E R D I S S I P A T I O N P c (m W )AMBIENT TEMPERATURE T a ()℃3000V —— I I V ——COLLECTOR CURRENT I C (mA)B A S E -E M I T T E R S A T U R A T I O N V O L T A G E V B E s a t (m V )30030COLLECTOR CURRENT I C(mA)D C C U R RE N T G A I N hF E2N3904Typical Characteristics30C O L L E C T O R -E M I T T E R S A T U R A T I O NV O L T A G E V C E s a t (m V )COLLECTOR CURRENT I c (mA)V I ——V / V C / C ——3C O L L C E T O R C U R R E N T I C (m A )BASE-EMMITER VOLTAGE V BE (V)I h ——C O L L E C T O R C U R R E N T I C (m A )COLLECTOR-EMITTER VOLTAGE V CE (V)C A P A C I T A N C E C (p F )REVERSE BIAS VOLTAGE V (V)【南京南山半导体有限公司 — 长电三极管选型资料】。
ALL常用贴片三极管
131 132 132 133 13A 13A 13E 13s 13s 13t 13V 13Y 13Y 14 14 14 14 14 142 14A 14s 14s 15 15 15 15 15 151 152 153 156 15A 15A 15s 15s 15V 15Y 16 16 16 161 162 163 166 16s 16s 16V 16Y 179 17s
BAS125-07W BFP181T PDTC143ZK PZM18NB1 PZM18NB2 PZM18NB3 PZM18NB BZV49-C18 BZV49-C18 PDTA143ZK DTA115EUA DTA115EKA Typ BC846 A PMBT3904 PXT3904 BC846A BC846AT FMMT3904 MMBT3904 IRLML2402 PMST3904 BC846AW MMBT3904L BC846A BC846A BC846AW PMBT2222 PXT2222 BC846 B BC846B BC846BT FMMT2222 MMBT2222 IRLML2803 PMST2222 BC846BW BC846B BC817UPN BC846B BC846BW FMMT-A20 MMBTA20L IRLML6302 BAP50-05 BC847S PMBTA42 BC846 MMBTA42
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手机成本( 英飞凌+安凯)
Item Part Description Reference Quantity Unit Price(USD)Set Price(USD)Brand Vendor P/N Agent Remark1电容CAP-18pF-16V-5%-COG-C0402C113,C11420.001330.00266Murata GRM1555C1H180JZ01D 1.湘海电子2.首科电子2电容CAP-32pF-16V-5%-COG-C0402C115,C11620.001330.00266Murata 1.湘海电子2.首科电子3电容CAP-33pF-16V-5%-COG-C0402C401,C509,C51030.001330.00399Murata GRM1555C1H330JZ01D 1.湘海电子2.首科电子4电容CAP-560pF-16V-10%-COG-C0402C118,C119,C120,C12140.003100.0124Murata GRM1555C1H561JA01D 1.湘海电子2.首科电子5电容CAP-100nF-16V-10%-X5R-C0402C101,C102,C103,C104,C105,C106,C107,C108,C109,C110,C117,C201,C202,C203,C204,C205,C211,C216,C301,C404,C405,C425,C502,C505,C506250.001800.045Murata GRM155R61C104KA88D1.湘海电子2.首科电子6电容CAP-470nF-16V-10%-X5R-C0402C21710.001800.0018Murata 1.湘海电子2.首科电子7电容CAP-1.0uF-10V-10%-X5R-C0402C111,C501,C50430.006000.018Murata 1.湘海电子2.首科电子8电容CAP-2.2uF-25V-10%-C0603C122,C30320.01420.0284Murata GRM188R61C225KE15D 1.湘海电子2.首科电子9电容CAP-4.7uF-16V-10%-X5R-C0603C112,C206,C209,C212,C213,C214,C21570.003200.0224Murata1.湘海电子2.首科电子10电容CAP-10uF-10V-10%-C0805C207,C210,C302,C403,C406,C50360.002850.0171Murata GRM21BR61C106KE15L 1.湘海电子2.首科电子11电容CAP-TAN-100uF-16V-10%-C1210C507,C50820.100000.2Murata 1.湘海电子2.首科电子12电阻RES-6.8R-1/4W-5%-SR0805R30610.000800.0008Yageo RC0402JR-076R8XMHOLDER 13电阻RES-12R-1/4W-5%-SR0805R302,R41620.000800.0016Yageo RC0402JR-07120XMHOLDER 14电阻RES-22R-1/16W-5%-SR0402R104,R10520.000500.001Yageo RC0402JR-07220XMHOLDER 15电阻RES-30R-1/4W-5%-SR0805R50210.000800.0008Yageo RC0402JR-07300XMHOLDER 16电阻RES-1kR-1/16W-5%-SR0402R50310.000500.0005Yageo RC0402JR-07102XMHOLDER 17电阻RES-1.2kR-1/16W-5%-SR0402R430,R431,R432,R433,R50350.000500.0025Yageo RC0402JR-07122XMHOLDER 18电阻Res,0 OHM,1/16W,+/-5%,SR0402R434,R43520.000500.001Yageo19电阻RES-1.5kR-1/16W-5%-SR0402R10210.000500.0005Yageo RC0402JR-07152XMHOLDER 20电阻RES-2.2kR-1/16W-5%-SR0402R40510.000500.0005Yageo RC0402JR-07222XMHOLDER 21电阻RES-4.7kR-1/16W-5%-SR0402R10710.000500.0005Yageo RC0402JR-07472XMHOLDER22电阻RES-10kR-1/16W-5%-SR0402R103,R110,R114,R402,R403,R406,R407,R408,R409,R410,R412,R415,R417,R501,R504,R505,R507,R508,R516,R519,R520,R301220.000500.011Yageo RC0402JR-07103XMHOLDER23电阻RES-20kR-1/16W-5%-SR0402R20310.000500.0005Yageo RC0402JR-07203XMHOLDER 24电阻RES-47kR-1/16W-5%-SR0402R204,R41420.000500.001Yageo RC0402JR-07473XMHOLDER 25电阻RES-51kR-1/16W-5%-SR0402R510,R511,R512,R513,R514,R51560.000500.003Yageo RC0402JR-07513XMHOLDER 26电阻RES-100kR-1/16W-1%-SR0402R101,10.000800.0008Yageo RC0402FR-07104XMHOLDER27电阻RES-100kR-1/16W-5%-SR0402R106,R111,R112,R113,R115,R201,R202,R205,R404,R413,R517110.000500.0055Yageo RC0402JR-07104XMHOLDER28电阻RES-1MR-1/16W-5%-SR0402R108,R10920.000500.001Yageo RC0402JR-07105XMHOLDER 应用处理器部分29磁珠BLM-75R-25%-300mA-0402L101,L102,L40130.00350.0105Murata BLM15BB750SN11.湘海电子2.首科电子30功率电感IND-3.3uH-10%-1210L20110.0450000.045顺络电子顺络电子31功率电感IND-22uH-10%-1210L30210.0450000.045顺络电子顺络电子32滤波器EXC24CD121FL40110.1083400.1083panasonic33磁珠BLM-600R-25%-100mA-0402B301,B50120.0063030.012606panasonic EXC3BB601H京凌科技34NPN型三极管TRAN-NPN-40V-200mA-SOT23Q401,Q50120.0300000.06Philips PMBT3904,sot23安富利35N沟道增强型MOS管TRAN-MOS-N-60V-TO-236AB Q40210.0300000.03Philips2N7002,sot23安富利36ESD 保护(压敏电阻)RES-VAR-20%-5.5V-0402RD101,D102,D202,D313,D410,D411,D412,D413,D414,D415,D416,D510,D511,D512140.0005000.007Epcos CT0402M4G俊成科技37ESD保护器件RES-6.4Vto7.2V-45pF-SOT23D103,D401,D402,D403,D503,D504,D505,D506,D50790.0340000.306Toshiba DF5A6.8FU台和38二极管DIO-30V-1A-SOD-523/SC-79D201,D412,D418,D50240.0143000.0572Rohm1SS4001.研达科技2.科发电子39肖特基二极管DIO-SCHO-20V-500mA-SOD-123D31710.0143000.0143Diodes B0530WS40键盘灯LED-BLUE-0603-5mA D419,D420,D421,D422,D423,D42460.03000.18佰鸿蓝光LED億威利41SD卡座,CON-SD-Amphenol JS50110.4000000.4Amphenol GSD11001AEU睿吉通电子42触摸屏连接器CON-4pin-0.5SH J10110.0900000.0900Hiros FH19-4S-0.5SH(48)1.信邦电子2.兆崴国际43电池连接器CON-Battery-3pin-2.5PH-4.3H J20110.1000000.1创丰电子BC-3P-2.5PH-4.3H创丰电子44LCD连接器CON-LCD-Nais J30110.2200000.22Nais AXK7L30227G 1.宇科光电2.科通通信45Camera Socket CON-Camera-24pin-Mitsumi J30210.2300000.23Mitsumi R41-8558-A,(M09)1.时毅电子2.时富电子46耳机插座CON-Audio-6pin-Wieson J50110.1500000.15Wieson7272-46,Conn_6Wieson 47尾插CON-Jack-12pin J50210.2300000.23ASTRON060220ASTRON 48侧键CON-SideKey-Cityzen SW423,SW424,SW425,30.08500.255Cityzen LS10时尚科技49处理器IC-AP-AK3223-BGA244U1011 6.1000 6.1Anyka AK3223M Anyka 50反相器IC-Inverter-0.9Vto3.6V-SOT553U10210.10000.1Onsemi553安富利51SDRAM IC-SDRAM-64Mbit-3.0V-x16-TSOP U20110.88000.88Sansung K4M281633H_R(B)N/G/L/F751.AV2.三达52NANDFLASH IC-NAND-512Mb-3.0V-x8-BGA U2021 2.5000 2.5Sansung K9F1208U0B-G,L1.AV2.三达53DC-DC chip DC/DC-POW-1.8V/SOT23-5U20310.35000.35Torex XC9216A18CMRN长天电子54LDO LDO-POW-3V-300mA-SOT-23U20410.25000.25Micrel MIC5259-3.0BD51.世强电讯2.艾睿电子55LDO,3.3V LDO-POW-3.3V-300mA-SOT-23U20510.25000.25Micrel MIC5259-3.3BD51.世强电讯2.艾睿电子56LDO POW-LDO-2.5V-150mA-SOT25U20610.07500.075Torex XC6209A252MR /SOT25长天电子57LCD背光升压芯片POW-DC/DC-2.5Vto6V-SOT23-6U30210.20000.2MPS MP1518TBD58缓冲器IC-Buffer-1.65Vto5.5V-24mA/3V-2.6ns/50pF,5V-MicroPAK U401,U40220.10000.2Fairchild NC7SZ1251.Fairchild2.安富利59晶振CRY-26MHz-10pF-±30ppm-SMD Y10110.20000.2TAITIEN XVCGGCNANF-26MHZ，TAITIEN60晶振CRY-32.768kHz-20pF-±30ppm-SMD Y10210.15000.15Epson MC1461.中电2.众文远达18714.1928561电容CAP-1pF-16V-10%-C0402C70310.002300.0023Murata GRM1555C1H1R0BZ01D 1.湘海电子2.首科电子2电容CAP-1.2pF-16V-10%-C0402C71310.002300.0023Murata GRM1555C1H1R2BZ01D 1.湘海电子2.首科电子3电容CAP-1.8pF-16V-10%-C0402C718,C72220.002800.0056Murata GRM1555C1H1R8BZ01D 1.湘海电子2.首科电子4电容CAP-4.7pF-16V-10%-C0402C72410.002300.0023Murata GRM1555C1H4R7BZ01D 1.湘海电子2.首科电子5电容CAP-18pF-16V-5%-C0402C629,C63020.001330.00266Murata GRM1555C1H180JZ01D 1.湘海电子2.首科电子6电容CAP-27pF-16V-10%-C0402C643,C645,C702,C706,C707,C708,C723,C729,C730,C731,C732110.001330.01463Murata GRM1885C1H270JA01D1.湘海电子2.首科电子7电容CAP-33pF-16V-5%-C0402C631,C632,C63430.001330.00399Murata GRM1555C1H330JZ01D 1.湘海电子2.首科电子8电容CAP-4.7nF-16V-10%-C0402C704,C71720.001300.0026Murata GRM155R71H472KA01D 1.湘海电子2.首科电子9电容CAP-6.8nF-16V-10%-C0402C70110.001300.0013Murata GRM155R71H682KA88D 1.湘海电子2.首科电子10电容CAP-47nF-16V-10%-C0402C601,C705,C70930.002700.0081Murata GRM155R71C473KA01D 1.湘海电子2.首科电子11电容CAP-68nF-16V-10%-C0402C61010.003300.0033Murata GRM155R71C683KA88D 1.湘海电子2.首科电子12电容CAP-100nF-16V-10%-C0402C605,C608,C609,C619,C620,C621,C622,C623,C627,C628,C633,C637,C638,C639,C640,C712160.001580.02528Murata GRM155R71C104KA88D1.湘海电子2.首科电子13电容CAP-2.2uF-16V-10%-C0402C604,C606,C611,C612,C613,C614,C615,C616,C617,C624,C625,C626120.003200.0384Murata1.湘海电子2.首科电子14电容CAP-10uF-16V-10%-C0805C635,C636,C64430.029000.087Murata GRM21BR61C106KE15L 1.湘海电子2.首科电子15电容CAP-22uF-6.3V-20%-TC1210C602,C60720.070000.14Murata GRM31CR60J226ME19L 1.湘海电子2.首科电子16电容CAP-TAN-100uF-6.3V-20%-TC1210C60310.100000.1Murata1.湘海电子2.首科电子17电容CAP-TAN-150uF-6.3V-20%-TC1210C61810.100000.1Murata1.湘海电子2.首科电子18电阻RES-0R-1/16W-5%-SR0402R605,R606,R608,R620,R702,R704,R705,R70670.000500.0035Yageo RC0402JR-070XMHOLDER19电阻RES-0.15R-1/16W-5%-SR0402R60110.030000.03Yageo RC0402JR-070R15XMHOLDER 20电阻RES-4.7R-1/16W-5%-SR0402R60710.000500.0005Yageo RC0402JR-074R7XMHOLDER 21电阻RES-22R-1/16W-5%-SR0402R625,R626,R62730.000500.0015Yageo RC0402JR-07220XMHOLDER 22电阻RES-220R-1/16W-5%-SR0402R701,10.000500.0005Yageo RC0402JR-07221XMHOLDER 23电阻RES-1kR-1/16W-5%-SR0402R703,10.000500.0005Yageo RC0402JR-07102XMHOLDER 24电阻RES-1.5kR-1/16W-5%-SR0402R61810.000500.0005Yageo RC0402JR-07152XMHOLDER 25电阻RES-2.2kR-1/16W-5%-SR0402R62110.000500.0005Yageo RC0402JR-07222XMHOLDER 26电阻RES-4.7kR-1/16W-5%-SR0402R61510.000500.0005Yageo RC0402JR-07472XMHOLDER 27电阻RES-10kR-1/16W-5%-SR0402R61110.000500.0005Yageo RC0402JR-07103XMHOLDER 28电阻RES-22kR-1/16W-5%-SR0402R602,R612,R613,R62240.000500.002Yageo RC0402JR-07223XMHOLDER 29电阻RES-47kR-1/16W-5%-SR0402R61410.000500.0005Yageo RC0402JR-07473XMHOLDER 30电阻RES-82kR-1/16W-5%-SR0402R60910.000810.00081Yageo RC0402JR-07823XMHOLDER 基带射频部分31电阻RES-100kR-1/16W-5%-SR0402R617,R62420.000500.001Yageo RC0402JR-07104XMHOLDER 32电阻RES-220kR-1/16W-5%-SR0402R604,R62320.000500.001Yageo RC0402JR-07224XMHOLDER 33电阻RES-390kR-1/16W-5%-SR0402R61610.000500.0005Yageo RC0402JR-07394XMHOLDER 34电阻RES-560kR-1/16W-5%-SR0402R60310.000500.0005Yageo RC0402JR-07564XMHOLDER 35电阻RES-1MR-1/16W-5%-SR0402R61010.000500.0005Yageo RC0402JR-07105XMHOLDER 36电感IND-1.5nH-10%-0402L70710.00500.005顺络电子顺络电子37电感IND-2.2nH-10%-0402L704,L70520.00500.01顺络电子顺络电子38电感IND-6.2nH-20%-0402-Wirewound L71110.04500.045顺络电子顺络电子39电感IND-15nH-3%-0402-Wirewound L709,L71020.04500.09顺络电子顺络电子40电感IND-10uH-10%-1210L601,L60220.03500.07顺络电子顺络电子41电感BLM15BB750SN1L629,L63020.00350.007Murata42二极管DIO-SCHO-10V-3A-SOD-323D60110.02900.029Infineon BAT60B,品佳电子43ESD保护器件RES-VAR-20%-5.5V-0402R D602,D60320.00050.001Toshiba ESD,CT0402M4G台和44mos管TRAN-MOSFET-P-2.5V-TSOP6Q60110.1050.105Infineon BSL211SP品佳电子45mos管TRAN-MOSFET-P-2.5V-SOT323Q60210.04680.0468Infineon BSS223PW品佳电子46复合管TRAN-PNP/NPN-SOT363Q60310.2160.216Infineon BCR39PN品佳电子47SIM卡座CON-simcard-0.9H JR60110.12000.12linktek SIMSH-00630-TP00良泽电子48射频连接头CON-RF-Murata J70110.11000.11Murata CRS5001-1003_1,MM8430A湘海电子49声表滤波器SAW-Impedance50Ω(I)/150Ω(O)-925to960MHz/InsertionLoss2.7Db/VSWR2.0/RippleDeviation1.8dB/AmplitudeBalance±1.0dB/PhaseBalance180±10°BP70210.15000.15EPCOS B78371.EPCOS2.俊成科技50声表滤波器SAW-Impedance50Ω(I)/150Ω(O)-1805to1880MHz/InsertionLoss2.5dB/VSWR2.2/RippleDeviation1.5dB/AmplitudeBalance±1.5dB/PhaseBalance180±12°BP70310.17000.17EPCOS B78521.EPCOS2.俊成科技51电源管理芯片PMU-PMB6814-VQFN48-Infineon U6011 1.2 1.2Infineon PMB6814品佳电子52存储器IC-FLA-2.7Vto3.1V-32MbNor-8MbpSRAM-56pin FBGA U6021 2.5000 2.5Spansion S71GL032A801.时尚科技2.威健实业53基带/射频处理器BB/RF-PMB7870-LFBGA233-Infineon U6031 4.8 4.8Infineon PMB7870品佳电子54天线开关Switch-ANT-12pin-TDK U70110.58000.58TDK ASM4518807T-250355射频PAPA-2BAND-GSM850(824to849MHz)/GSM900(880to915MHz)/DSC(1710to1785MHz)/ PSC(1850to1910MHz)-GSM35dB/3.5V-DCS/PCS33dB/3.5V-LFM48P U7021 1.3000 1.3RFMD RF31661.光明电子2.世健56晶振p ppSMD Y60110.15000.15MC MS2V-T1S普荣实业57晶振CRY-26MHz-10pF-±10ppm-SMD Y70110.34000.34Kyocera CX3225YB26000F0FLFZZ普荣实业12112.62987PCB 1.5PCBA28.3227261喇叭直径20mm ，弹片式LS10110.50000.5000Keyrin 2咪头MK40110.25000.2500BSE 3马达弹片胶套电机MOTOR50110.43000.4300韩国永柏4受话器32ohm Receiver LS60110.12000.1200Keyrin 5LCD LCD-2.2''-320x240-MPU 112.000012.0000Truly 6摄像头CAM-1.3M-CMOS 1 5.9000 5.9000Sunny7外壳结构件1 2.2000 2.20008电池1 1.2000 1.20009充电器1 1.0000 1.000010数据线10.80000.800011光盘10.15000.150012耳机10.80000.800013包装件10.50000.500025.850054.17271闪光灯驱动U30110.4800000.4800002闪光灯D31110.3800000.380000装配件与周转件可选件整机BOM 20-8E-09Keyrin OBG415L44C1033R宝星电子YB43DD-1麒麟通讯KR －1406C －01PKeyrin Truly 8108H 邦 泽 科 技LM2753SDCL-690S-2WF ，Flash Led。
基于STM32的半桥谐振感应加热系统设计与实现
基于STM32的半桥谐振感应加热系统设计与实现史延东;王凯;宁飞;江欣怡【摘要】As traditional induction heating sys tem has the disadvantages of low heating power,simple control scheme and protection methods etc,a new high power induction heating system based on STM32F103C8 is designed,a series of protec tion methods are introduced to overcome the sys tem failure such as short circuit,over voltage,phase loss etc.The parameters of the power circuit are tested by simulation.In the end,the work state and protection waveform are present.%为解决现有电磁加热存在的加热功率小、控制方式简单、保护措施单一等问题,设计了基于STM32F103C8的新型大功率感应加热系统.针对系统运行时可能存在的短路、过压和缺相等状况,设计了软、硬件保护方案.通过仿真验证功率电路参数准确性,最后给出系统工作及保护波形.【期刊名称】《机械与电子》【年(卷),期】2013(000)008【总页数】4页(P24-27)【关键词】感应加热;STM32F103C8;多重保护【作者】史延东;王凯;宁飞;江欣怡【作者单位】西北工业大学自动化学院,陕西西安710029;西北工业大学自动化学院,陕西西安710029;西北工业大学自动化学院,陕西西安710029;西北工业大学自动化学院,陕西西安710029【正文语种】中文【中图分类】TM925.510 引言随着我国工业化进程的加快，能源与环境问题日渐突出，为缓解上述压力，引入电磁加热器，其用电来取代燃煤、煤气和天然气等基本燃料，顺应了时代的发展，具有广阔的发展前景。
STMICROELECTRONICS 2N3904 数据手册
2N3904SMALL SIGNAL NPN TRANSISTORPRELIMINARY DATAsSILICON EPITAXIAL PLANAR NPN TRANSISTORsTO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY sTHE PNP COMPLEMENTARY TYPE IS 2N3906APPLICATIONS s WELL SUITABLE FOR TV AND HOME APPLIANCE EQUIPMENTs SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW SATURATION VOLTAGE®February 2003ABSOLUTE MAXIMUM RATINGS1/52N3904THERMAL DATAC unless otherwise specified)ELECTRICAL CHARACTERISTICS (T case = 25 o2N39042N3904Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.The ST logo is a trademark of STMicroelectronics © 2003 STMicroelectronics – Printed in Italy – All Rights ReservedSTMicroelectronics GROUP OF COMPANIESAustralia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.2N3904。
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DATA SHEETbook, halfpageM3D302PMBT3904DNPN switching double transistorProduct specification1999Dec15NPN switching double transistorPMBT3904DFEATURES•Low current (max. 100mA)•Low voltage (max. 40V)•Reduces number of components and board space.APPLICATIONS•Telephony and professional communication equipment.DESCRIPTIONTwo independently operating NPN switching transistors in a SC-74, six lead, SMD plastic package.MARKINGTYPE NUMBER MARKING CODEPMBT3904DD1PINNINGPIN DESCRIPTION1, 4emitter TR1; TR22, 5base TR1; TR26, 3collectorTR1; TR2handbook, halfpage MAM432Top view132456132TR1TR2645Fig.1 Simplified outline (SC-74) and symbol.LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).Note1.Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1cm2.SYMBOL PARAMETERCONDITIONSMIN.MAX.UNITPer transistor V CBO collector-base voltage open emitter −60V V CEO collector-emitter voltage open base −40V V EBO emitter-base voltage open collector−6V I C collector current (DC)−100mA I CM peak collector current −200mA P tot total power dissipation T amb ≤25°C; note 1−300mW T stg storage temperature −65+150°C T j junction temperature−150°C T amb operating ambient temperature−65+150°CPer device P tot total power dissipationT amb ≤25°C; note 1−600mWNPN switching double transistorPMBT3904DTHERMAL CHARACTERISTICS Note1.Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1cm2.CHARACTERISTICST amb =25°C unless otherwise specified.Note1.Pulse test: t p ≤300µs;δ≤0.02.SYMBOL PARAMETERCONDITIONS VALUE UNIT R th j-a thermal resistance from junction to ambientnote 1208K/WSYMBOL PARAMETERCONDITIONSMIN.MAX.UNITPer transistor I CBO collector cut-off current I E =0; V CB =30V −50nA I EBO emitter cut-off current I C =0; V EB =6V −50nAh FEDC current gainV CE =1V; note 1; Fig.3I C =0.1mA 60−I C =1mA 80−I C =10mA 100300I C =50mA 60−I C =100mA30−V CEsat collector-emitter saturation voltageI C =10mA; I B =1mA −200mV I C =50mA; I B =5mA −200mV V BEsat base-emitter saturation voltage I C =10mA; I B =1mA 650850mV I C =50mA; I B =5mA−950mV C c collector capacitance I E =i e =0; V CB =5V; f =1MHz −4pF C e emitter capacitance I C =i c =0; V BE =500mV; f =1MHz −8pF f T transition frequency I C =10mA; V CE =20V; f =100MHz 300−MHz Fnoise figureI C =100µA; V CE =5V; R S =1k Ω;f =10Hz to 15.7kHz−5dBSwitching times (between 10% and 90% levels);(see Fig.2)t on turn-on time I Con =10mA;I Bon =1mA;V CC =3V;V BB =−1.9V −65ns t d delay time −35ns t r rise time −35ns t off turn-off time −240ns t s storage time −200ns t f fall time−50nsNPN switching double transistor PMBT3904DV i =5V; T =600µs; t p =10µs; t r =t f ≤3ns.R1=56Ω; R2=2.5k Ω; R B =3.9k Ω; R C =270Ω.V BB =−1.9V; V CC =3V.Oscilloscope: input impedance Z i =50Ω.handbook, full pagewidthR CR2R1DUTMLB826V oR B(probe)450 Ω(probe)450 ΩoscilloscopeoscilloscopeV BB V iV CCFig.2 Test circuit for switching times.NPN switching double transistor PMBT3904Dhandbook, halfpage0500100200300400MCD78510−11(1)(2)(3)h FE 10I C (mA)102103Fig.3DC current gain as a function of collector current; typical values.V CE =1V.(1)T amb =150°C.(2)T amb =25°C.(3)T amb =−55°C.handbook, halfpage00.50.10.20.30.4MCD78810−11(1)V CEsat (V)10I C (mA)102103(3)(2)Fig.4Collector-emitter saturation voltage as a function of collector current; typical values.I C /I B =10.(1)T amb =150°C.(2)T amb =25°C.(3)T amb =−55°C.handbook, halfpage010.20.40.60.8MCD78610−11(1)(2)(3)V BE (V)10I C (mA)102103Fig.5Base-emitter voltage as a function of collector current; typical values.V CE =1V.(1)T amb =−55°C.(2)T amb =25°C.(3)T amb =150°C.handbook, halfpage010100204060802(2)(4)(5)(8)(9)(10)(1)V CE (V)I C(mA)468MCD787(3)(6)(7)Fig.6Collector current as a function ofcollector-emitter voltage; typical values.(1)I B =500µA.(2)I B =450µA.(3)I B =400µA.(4)I B =350µA.(5)I B =300µA.(6)I B =250µA.(7)I B =200µA.(8)I B =150µA.(9)I B =100µA.(10)I B =50µA.NPN switching double transistorPMBT3904DPACKAGE OUTLINEREFERENCESOUTLINE VERSION EUROPEAN PROJECTIONISSUE DATE IECJEDECEIAJ SOT457SC-74w BM b pD epin 1indexAA 1L pQdetail XH EE v M AA B y01 2 mmscalecX132456Plastic surface mounted package; 6 leadsSOT457UNIT A 1b p c D E H E L p Q y w v mm0.10.0130.400.253.12.70.260.101.71.3e 0.953.02.50.20.10.2DIMENSIONS (mm are the original dimensions)0.60.20.330.23A 1.10.997-02-28NPN switching double transistor PMBT3904DDEFINITIONSData sheet statusObjective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.Limiting valuesLimiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.Application informationWhere application information is given, it is advisory and does not form part of the specification.LIFE SUPPORT APPLICATIONSThese products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.© Philips Electronics N.V.SCA All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.The information presented in this document does not form part of any quotation or contract,is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.Internet: 199968Philips Semiconductors – a worldwide companyFor all other countries apply to: Philips Semiconductors,International Marketing &Sales Communications, Building BE-p, P.O.Box 218,5600MD EINDHOVEN, The Netherlands,Fax.+31402724825Argentina: see South AmericaAustralia: 3 Figtree Drive, HOMEBUSH, NSW 2140,Tel.+61297048141,Fax.+61297048139Austria:Computerstr. 6, A-1101 WIEN, P.O. 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Nr. 28 81260Umraniye,ISTANBUL, Tel.+902165221500,Fax.+902165221813Ukraine : PHILIPS UKRAINE, 4Patrice Lumumba str., Building B, Floor 7,252042KIEV, Tel.+380442642776, Fax. +380442680461United Kingdom: Philips Semiconductors Ltd., 276Bath Road, Hayes,MIDDLESEX UB35BX, Tel.+442087305000,Fax.+442087548421United States: 811East Arques Avenue, SUNNYVALE, CA 94088-3409,Tel.+18002347381, Fax.+18009430087Uruguay: see South AmericaVietnam: see SingaporeYugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000BEOGRAD,Tel.+38111625344,Fax.+38111635777Printed in The Netherlands115002/01/pp 8 Date of release:1999Dec 15Document order number: 939775006428。