TL201209-2R7K
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富士通固态电容系列介绍
富士通固态电容1. NS系列:主要特点:低阻抗/高纹波电流/长寿命/非套管/插件适应产品:开关电源与DC-DC交换器,CPU电源,微型大功率电源等(主要为需要长寿命的打印机,电脑主机板与部分显卡).温度: 105度标准寿命:2000HRS具体电压/容值/体积/内阻:4V-25V 10UF-1200UF 6.3*7-10*12.5 10-63毫欧(具体可根据客户需要参考目录书)此款与三和的FB系列类似,三和容值可达到3300UF,高度可到6MM,但三和的内阻比富士通的大.2. LS系列:主要特点:低阻抗/高稳定性/长寿命/非套管/插件适应产品:开关电源与DC-DC交换器,CPU电源,微型大功率电源等(主要为需要长寿命的打印机,电脑主机板与部分显卡).温度: 105度标准寿命:2000HRS具体电压/容值/体积/内阻:4V-25V 22UF-820UF 体积均为10*10.5 内阻12-35毫欧(具体可根据客户需要参考目录书)此款与NS不同点:高度都为10.5MM,直径为10MM,容值稍低,可作为NS的补充.3. R7系列:主要特点:超低阻抗/高纹波电流/长寿命/非套管/插件适应产品:开关电源与DC-DC交换器,CPU电源,微型大功率电源等(主要为需要长寿命的打印机,电脑主机板与部分显卡).温度: 105度标准寿命:2000HRS具体电压/容值/体积/内阻:2.5V-16V 68UF-1500UF 8*11.5-10*12.5 内阻都为7毫欧(具体可根据客户需要参考目录书)此款的主要特点就是内阻超低,使用寿命可以会更长.4.R5系列:主要特点:特超低阻抗/高纹波电流/长寿命/非套管/插件适应产品:开关电源与DC-DC交换器,CPU电源,微型大功率电源等(主要为需要长寿命的打印机,电脑主机板与部分显卡).温度: 105度标准寿命:2000HRS具体电压/容值/体积/内阻:2.5V-6.3V 390UF-1500UF 8*11.5-10*12.5 内阻都为5毫欧(具体可根据客户需要参考目录书)此款的主要特点就是内阻超低,使用寿命可以会更长.适合需要高容值,小电压的产品.5.NU系列:主要特点:超低阻抗/高纹波电流/长寿命/大容值/非套管/插件适应产品:开关电源与DC-DC交换器,CPU电源,微型大功率电源等(主要为需要长寿命的打印机,电脑主机板与部分显卡).温度: 105度标准寿命:2000HRS具体电压/容值/体积/内阻:2.5V-16V 100UF-2700UF 8*11.5-10*12.5 内阻都为7-25毫欧(具体可根据客户需要参考目录书)此款的容值增加到2700UF6. L8系列:主要特点:低阻抗/高纹波电流/长寿命/非套管/插件适应产品:开关电源与DC-DC交换器,CPU电源,微型大功率电源等(主要为需要长寿命的打印机,电脑主机板与部分显卡).温度: 105度标准寿命:2000HRS具体电压/容值/体积/内阻:2.5V-6.3V 470UF-1000UF 8*8 内阻都为6-8毫欧(具体可根据客户需要参考目录书)此款可做R5的补充.7. PS系列:主要特点:低阻抗/高纹波电流/长寿命/非套管/贴片(加底座)适应产品:开关电源与DC-DC交换器,CPU电源,微型大功率电源等(主要为需要长寿命的打印机,电脑主机板与部分显卡).温度: 105度标准寿命:2000HRS具体电压/容值/体积/内阻:2.5V-16V 39UF-1500UF 6.3*5.7-10*12.4 内阻都为12-40毫欧(具体可根据客户需要参考目录书)此款比插件的固态电容成本要高8. FS系列:主要特点:低阻抗/高纹波电流/长寿命/非套管/贴片(加底座)适应产品:开关电源与DC-DC交换器,CPU电源,微型大功率电源等(主要为需要长寿命的打印机,电脑主机板与部分显卡).温度: 105度标准寿命:2000HRS具体电压/容值/体积/内阻:2.5V-10V 10UF-180UF 5*5.7 内阻都为21-220毫欧(具体可根据客户需要参考目录书)此款适合电压低,体积小,容值不大的需求9. SS/SA/SB系列:主要特点:低阻抗/高纹波电流/长寿命/非套管/贴片(加底座)适应产品:开关电源与DC-DC交换器,CPU电源,微型大功率电源等(主要为需要长寿命的打印机,电脑主机板与部分显卡).温度: 105度标准寿命:2000HRS具体电压/容值/体积/内阻:2.5V-6.3V 220UF-560UF 6.3*5.7 内阻为14-25毫欧(具体可根据客户需要参考目录书)此款适合电压低,体积小,容值不大的需求(一般体积越小,内阻不容易控制小)10. HS/HA系列:主要特点:低阻抗/高纹波电流/长寿命/非套管/贴片(加底座)适应产品:开关电源与DC-DC交换器,CPU电源,微型大功率电源等(主要为需要长寿命的打印机,电脑主机板与部分显卡).温度: 105度标准寿命:2000HRS具体电压/容值/体积/内阻:2.5V-6.3V 330UF-1500UF 8*6.7-8*11.7 内阻为8-18毫欧(具体可根据客户需要参考目录书)此款适合要求直径是8MM大的杰特兴主要代理经营国产固态电容，质优价廉，欢迎咨询询价送样，电话135****9681，罗海波，QQ381545145.。
TLJ
T(1000) T(1000)
Released ratings, (ESR ratings in mOhms in parentheses) Note: Voltage ratings are minimum values. AVX reserves the right to supply higher voltage ratings in the same case size, to the same reliability standards.
Capacitance μF Code 6.8 685 10 15 22 33 47 68 100 150 220 330 470 680 1000 1500 106 156 226 336 476 686 107 157 227 337 477 687 108 158 T(1100) N(8000)/R(3000) K(1500)/N(4000) P(3000)/R(3000) K(1200)/N(8000) P(3000) R(2900)/S(1500) A(500)/G(800) K(2000)/P(2700) S(1400) A(800)/T(800) A(1100)/G(3000) H(900)/T(1100) T(2700)/W(200) N(5400)/R(3500) K(1700)/N(8000) P(3000)/R(3000) K(1500)/N(8300) P(700,900,1800,2500) R(3200)/S(1500) A(500)/G(800) K(2000) S(1500)/T(600) A(500,800)/G(800) K(2000) P(5400)/T(800) A(900) H(900)/T(1200) B(500)/T(2000) W(200) F(300) Y(100,150) V(100) 2.5V (e) 4V (G) Rated Voltage DC to 40°C / 0.5DC to 85°C / 0.2DC to 125°C 6.3V (J) 10V (A) 16V (C) N(2500) R(2000,3000) R(2000) K(1800)/N(3800) R(3800) K(1500)/N(9600) P(3500) R(3500)/S(1500) A(600)/G(1500) P(3200)/R(3200) S(1500)/T(600) A(1500) A(1400) H(900)/T(900) B(500) W(150,200) F(300) S(2200) 20V (D) T(1000)
常用场效应管(25N120等)参数及代换
常用场效应管（25N120等）参数及代换FGA25N120AND （IGBT） 1200V/25A//TO3P （电磁炉用）FQA27N25 （MOSFET） 250V/27A/TO3P IRFP254FQA40N25 （MOSFET） 250V/40A/280W/0.051Ω/TO3P IRFP264FQA55N25 （MOSFET） 250V/55A/310W/0.03Ω/TO3PFQA18N50V2 （MOSFET） 500V/20A/277W/0.225Ω IRFP460AFQA24N50 （MOSFET） 500V/24A/290W/0.2Ω/TO3PFQA28N50 （MOSFET） 500V/28.4A/310W/0.126Ω/TO3P MTY30N50EFQL40N50 （MOSFET） 500V/40A/560W/0.085Ω/TO264 IRFPS37N50FQA24N60 （MOSFET） 600V/24A/TO3PFQA10N80 （MOSFET） 800V/9.8A/240W/0.81Ω/TO3PFQA13N80 （MOSFET） 800V/13A/300W/0. Ω/TO3PFQA5N90 （MOSFET） 900V/5.8A/185W/2.3Ω/TO3PFQA9N90C （MOSFET） 900V/8.6A/240W/1.3Ω/TO3PFQA11N90C （MOSFET） 900V/11.4A/300W/0.75Ω/TO3PFFA30U20DN （快恢复二极管） 200V/2×30A/40ns/TO3P DSEK60-02A FFPF30U60S （快恢复二极管） 600V/30A/90ns/TO220F MUR1560FFA30U60DN （快恢复二极管） 600V/2×30A/90ns/TO3P DSEK60-06A MBRP3010NTU （肖特基） 100V/30A/TO-220MBRA3045NTU （肖特基） 45V/30A/TO-3PISL9R3060G2 （快恢复二极管） 600V/30A/35ns/200W/TO247 APT30D60B RHRG3060 （快恢复二极管） 600V/30A/35nS/TO247FQP44N10 （MOSFET） 100V/44A/146W/0.0396Ω/TO220 IRF3710/IRF540N FQP70N10 （MOSFET） 100V/57A/160W/0.025Ω/TO220IRFP450B （MOSFET） 500V/14A/0.4Ω/205W/TO3PIRFP460C （MOSFET） 500V/20A/0.2~0.24Ω/235W IRFP460KA3162/FAN8800 （Drive IC）单IGBT/MOSFETFET驱动ICRHRP860 （快恢复二极管） 600V/8A/30NS/TO-220 MUR860RHRP1560 （快恢复二极管） 600V/15A/TO0220 MUR1560RHRP8120 （快恢复二极管） 1200V/8A/75W/TO220RHRP15120 （快恢复二极管） 1200V/15A/TO220RHRP30120 （快恢复二极管） 1200V/30A/125W/TO220单 DSEI20-10ARHRG30120 （快恢复二极管） 1200V/30A/T03PSSH45N20B （MOSFET） 200V/45A/TO3P IRFP260FGL40N150D （IGBT） 1500V/40A/TO264快速IGBTFGL60N100BNTD （IGBT） 1000V/60A/TO264快速IGBT 1MBH60-100HGTG10N120BND （IGBT） 1200V/35A/298W/100ns/TO247HGTG11N120CND （IGBT） 1200V/43A/298W/TO247HGTG18N120BND （IGBT） 1200V/54A/390W/90ns/TO247FQP5N50C （MOSFET） 500V/5A/73W/1.4Ω/TO-220 替代：IRF830,用于35W FQPF5N50C （MOSFET） 500V/5A/38W/1.4Ω/TO-220F 替代：IRF830，用于35W FQP9N50C （MOSFET） 500V/9A/135W/0.6Ω/TO220 替代：IRF840，用于75W FQPF9N50C （MOSFET） 500V/9A/44W/0.6Ω/TO-220F 替代：IRF840，用于75W FQP13N50 （MOSFET） 500V/13.4A/190W/0.43Ω/TO220 用于75W/125W产品FQPF13N50 （MOSFET） 500V/13.4A/48W/0.43Ω/TO220F 用于75W/125W产品FQD5N50C （MOSFET） 500V/5A/1.4Ω/TO252 用于35WFQA16N50 （MOSFET） 500V/16A/200W/0.32C/TO3P 用于150W到250W的产品FDP15N50 （MOSFET） 500V/15A/0.43Ω/56W/TO220 用于150W左右的产品FQP18N50V2 （MOSFET） 500V/18A/0.43Ω/208W/TO220 用于250WG到400W的产品FQPF18N50V2 （MOSFET） 500V/18A/0.43Ω/56W/TO220 用于250WG到400W的产品FQA18N50V2 （MOSFET） 500V/20A/277W/0.225Ω/TO3P 用于250WG到400W的产品FQA24N50 （MOSFET） 500V/24A/290W/0.2Ω/TO3P 用于400W的产品FQA24N60 （MOSFET） 600V/23.5A/310W/0.24Ω/TO3P 用于400W的产品FQA28N50 （MOSFET） 500V/28.4A/310W/0.126Ω/TO3P 用于400W的产品FQL40N50 （MOSFET） 500V/40A/560W/0.085Ω/TO264 用于560W的产品IRF740B （MOSFET） 400V/10A/0.55Ω/134W/TO220IRF730B （MOSFET） 400V/5.5A/1.0Ω/73W/TO220IRF830B （MOSFET） 500V/4.5A/1.5Ω/73W/TO220 IRF840B （MOSFET） 500V/8A/0.85Ω/134W/TO220 IRFP450B （MOSFET） 500V/14A/0.4Ω/205W/TO3P IRFP460C （MOSFET） 500V/20A/0.2~0.24Ω/235W FQPF5N60C （MOSFET） 600V/5A/TO220FFQPF8N60C （MOSFET） 600V/8A/TO220FFQPF10N60C （MOSFET） 600V/10A/TO220FQPF12N60 （MOSFET） 600V/12A/51W/0.65Ω/TO220F FCP11N60 （MOSFET） 650V/11A/125W0.32Ω/TO220 RHRD660S （快恢复二极管） 600V/6A/TO-252RHRP860 （快恢复二极管） 600V/8A/75W/TO-220 RHRP1560 （快恢复二极管） 600V/15A/TO-220单2N7002 （三极管） 60V/0.12A/SOT-23HUF76629D3S （MOSFET） 100V/20A/110W/TO-252 HUF75639S3S （MOSFET） 100V/56A/200W/TO-263ISL9V3040D3S （IGBT） 430V/21A/150W/300MJ/TO252 ISL9V3040S3S （IGBT） 430V/21A/150W/300MJ/TO263 ISL9V5036S3S （IGBT） 360V/46A/250W/TO262FQP33N10L （MOSFET） 100V/33A/52MΩ127W/TO220。
Vaisala GMW90 二氧化碳和温度传感器说明书
GMW90 CO2 and Temperature Transmitter - BACnet/Modbus1234567891011Vaisala Carbocap ® CO2 and Temperature Transmitter GMW905000Price5Display and colour Standard White (RAL9003, solid cover)0Standard White (RAL9003, display cover)1Black (RAL9005, solid cover)2Black (RAL9005, display cover)3No logo, standard White (RAL9003, solid cover)8No logo, standard White (RAL9003, display cover)9Indicator cover (RAL9003, display and CO2 indicators)A6Units MetricA Non metricB 7Display configuration Default (T, CO2)A CO2CO2C8Elevation setting Standard (sea level)0Custom Define m (ft)X 9CO2 indicator levels None0Standard (800,1200 ppm)1Custom Define YellowRed ppmX 10Trimmers With adjustement trimmerA No adjustement trimmerB11Quick reference guide No manual0Multilingual for digital devices 2Accessories:TM10SP Temperature measurement module GM10SP CO2 measuremnt module219980Connection cable for HM70 hand-held meter 219690USB cable for PC connectionSelections in bold are included in the prices of the basic versions Selections in italic are available at an extra costGMW9050001A A 00A 2GMW90 CO2 and Temperature Transmitter - Current output1234567891011Vaisala Carbocap ® CO2 and Temperature TransmitterGMW904Price2Output signal 4...20mA 3-wire 40...20mA 3-wire 53Output parameter for CH1CO20...2000 ppm L CO20...5000 ppm M CO2, free scaleDefine Low High ppm N T, free scaleDefine Low High °C (°F)T 4Output parameter for CH2T -5...+55 °C (+23...+131 °F)E T 0...+60 °C (+32...+140 °F)F CO2, free scaleDefine Low High ppm N T, free scaleDefine Low High °C (°F)T 5Display and colour Standard White (RAL9003, solid cover)0Standard White (RAL9003, display cover)1Black (RAL9005, solid cover)2Black (RAL9005, display cover)3No logo, standard White (RAL9003, solid cover)8No logo, standard White (RAL9003, display cover)9Indicator cover (RAL9003, display and CO2 indicators)A6Units Metric ANon metric B7Display configuration Default (T, CO2)ACO2C8Elevation setting Standard (sea level)0Custom Define m (ft)X9CO2 indicator levels None 0Standard(800,1200 ppm)1Custom Define Yellow Red ppmX 10Trimmers With adjustement trimmer ANo adjustement trimmer B11Quick reference guide No manual0Multilingual for analog devices 1Accessories:TM10SP Temperature measurement module GM10SP CO2 measuremnt module219980Connection cable for HM70 hand-held meter 219690USB cable for PC connectionSelections in bold are included in the prices of the basic versions Selections in italic are available at an extra costGMW9044L E 1A A 00A 1GMW90 CO2 and Temperature Transmitter - Voltage output1234567891011Vaisala Carbocap ® CO2 and Temperature TransmitterGMW903Price2Output signal 0...10 V 3-wire 20...5 V 3-wire 33Output parameter for CH1CO20...2000 ppm L CO20...5000 ppm M CO2, free scaleDefine Low High ppm N T, free scaleDefine Low High °C (°F)T 4Output parameter for CH2T -5...+55 °C (+23...+131 °F)E T 0...+60 °C (+32...+140 °F)F CO2, free scaleDefine Low High ppm N T, free scaleDefine Low High °C (°F)T 5Display and colour Standard White (RAL9003, solid cover)0Standard White (RAL9003, display cover)1Black (RAL9005, solid cover)2Black (RAL9005, display cover)3No logo, standard White (RAL9003, solid cover)8No logo, standard White (RAL9003, display cover)9Indicator cover (RAL9003, display and CO2 indicators)A6Units Metric ANon metric B7Display configuration Default (T, CO2)ACO2C8Elevation setting Standard (sea level)0Custom Define m (ft)X9CO2 indicator levels None 0Standard(800,1200 ppm)1Custom Define Yellow Red ppmX 10Trimmers With adjustement trimmer ANo adjustement trimmer B11Quick reference guide No manual0Multilingual for analog devices 1Accessories:TM10SPGM10SP Temperature measurement module219980Connection cable for HM70 hand-held meter 219690USB cable for PC connectionSelections in bold are included in the prices of the basic versions Selections in italic are available at an extra costGMW9032L E 1A A 00A 1。
Jamicon_SK系列规格书
At +85oC no voltage application after 1000 hours the capacitor shall meet the following limits. (with voltage treatment) Shelf Life Capacitance Change Dissipation Factor Leakage current *±20% of initial value *200% of initial specified value *200% of initial specified value
*Whichever is greater after 3 minutes I : Leakage Current( µA) C : Rated Capacitance( µF) W.V. S.V. W.V. tan d 6.3 8 6.3 0.22 10 13 10 0.19 16 20 16 0.16 6.3 4 8 25 32 25 0.14 10 3 6 35 44 35 0.12 50 63 50 0.10 16 2 4 63 79 63
µF 0.47 1 2.2 3.3 4.7 10 22 33 47 100 220 330 470 1000 2200 3300 4700 6800 8200 10000 15000
Code
5x11 5x11 5x11 6.3x11 5x11 6.3x11 6.3x11 8x11.5 8x11.5 10x12.5 8x11.5 10x12.5 10x12.5 10x16 10x20 12.5x20 12.5x25 16x25 16x25 16x31.5 16x31.5 18x35.5 18x35.5 18x40 22x45 22x50 25x50
士林变频器SS2系列操作手册
请勿对变频器内部的零件进行耐压测试，因变频器所使用的半导体易 受高压而损坏。
变频器的电路板有 CMOS IC 极易受静电的破坏，故在未做好静电措施 前请勿用手触摸电路板。
即使马达是停止的，变频器的主回路端子仍然可能带有危险的高压。 只有合格的电机专业人员才可以安装、配线及修理保养变频器。 当变频器某些功能被设定后，可能电源输入后会立即启动马达开始运
危险 注意
请勿存放于有腐蚀性气体、有水、引燃气体之场合操作变频器。 操作时请远离可燃物或爆裂物。 震动或摇晃激烈场合请不要放置变频器。 导线请勿浸泡在油、水之下进行操作。 禁止于变频器通电中用身体碰触变频器内部任何部分，以免触电。 三相电源不可接至 U/T1、V/T2、W/T3 端。
变频器端子 务必正确的接地。
2.1 铭牌说明 ................................................................................................................................................. 2 2.2 型号说明 ................................................................................................................................................. 2 2.3 订货代号说明...................................................................................................................
APT4F120S 1200V 4A 4.2Ω 高速高压N型切换电容电阻MOSFET（FREDFET
050-8179 R e v A 10-2011Absolute Maximum RatingsThermal and Mechanical CharacteristicsSymbol ParameterRatingsUnitI D Continuous Drain Current @ T C = 25°C 4A Continuous Drain Current @ T C = 100°C 3I DM Pulsed Drain Current 115V GS Gate - Source Voltage±30V E AS Single Pulse Avalanche Energy 2310mJ I ARAvalanche Current, Repetitive or Non-Repetitive2A Single die FREDFETTYPICAL APPLICATIONS•ZVS phase shifted and other full bridge •Half bridge•PFC and other boost converter •Buck converter•Single and two switch forward •FlybackFEATURES•Fast switching with low EMI •Low t rr for high reliability•Ultra low C rss for improved noise immunity •Low gate charge •Avalanche energy rated •RoHS compliantAPT4F120SPower MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET.This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced t rr , soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of C rss /C iss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency.N-Channel FREDFETMicrosemi Website - Symbol CharacteristicMin Typ MaxMax P D Total Power Dissipation @ T C = 25°C --175W R θJC Junction to Case Thermal Resistance--0.7°C/W R θCS Case to Sink Thermal Resistance, Flat, Greased Surface -.11T J , T STGOperating and Storage Junction Temperature Range -55-°C W TPackage Weight-0.14oz - 3.95g050-8179 R e v A 10-2011Static CharacteristicsT J = 25°C unless otherwise speci fi edSource-Drain Diode CharacteristicsDynamic CharacteristicsT J = 25°C unless otherwise speci fied 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.2 Starting at T J = 25°C, L = 155.0mH, R G = 25Ω, I AS = 2A.3 Pulse test: Pulse Width < 380μs, duty cycle < 2%.4 C o(cr) is de fined as a fi xed capacitance with the same stored charge as C OSS with V DS = 67% of V (BR)DSS . 5 C o(er) is de fi ned as a fi xed capacitance with the same stored energy as C OSS with V DS = 67% of V (BR)DSS . To calculate C o(er) for any value of V DS less than V (BR)DSS, use this equation: C o(er) = -8.32E-8/V DS ^2 + 3.49E-8/V DS + 1.30E-10.6 R G is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)Microsemi reserves the right to change, without notice, the speci fi cations and information contained herein.APT4F120SSymbol ParameterTest Conditions Min TypMaxUnit V BR(DSS)Drain-Source Breakdown VoltageV GS = 0V, I D = 250μA1200V∆V BR(DSS)/∆T JBreakdown Voltage Temperature Coef fi cient Reference to 25°C, I D = 250μA1.41V/°C R DS(on)Drain-Source On Resistance 3V GS = 10V, I D = 2A 3.424.2ΩV GS(th)Gate-Source Threshold VoltageV GS = V DS , I D = 0.5mA 2.545V ∆V GS(th)/∆T JThreshold Voltage Temperature Coef fi cient -10mV/°CI DSS Zero Gate Voltage Drain Current V DS = 1200V V GS = 0VT J = 25°C 250μA T J = 125°C1000I GSSGate-Source Leakage CurrentV GS = ±30V±100nASymbolParameterTest Conditions MinTyp Max Unit g fs Forward Transconductance V DS = 50V, I D = 2A 4.5SC iss Input CapacitanceV GS = 0V, V DS = 25Vf = 1MHz1385pFC rss Reverse Transfer Capacitance 17 C oss Output Capacitance100C o(cr) 4Effective Output Capacitance, Charge Related V GS = 0V, V DS = 0V to 800V40C o(er) 5Effective Output Capacitance, Energy Related 20Q g Total Gate Charge V GS = 0 to 10V, I D = 2A,V DS = 600V43nCQ gs Gate-Source Charge 7Q gd Gate-Drain Charge 20t d(on)Turn-On Delay Time Resistive Switching V DD = 800V, I D = 2A R G = 10Ω 6 , V GG = 15V7.4nst r Current Rise Time 4.4t d(off)Turn-Off Delay Time 24t fCurrent Fall Time6.9Symbol ParameterTest ConditionsMin Typ Max UnitI S Continuous Source Current (Body Diode)4AI SM Pulsed Source Current (Body Diode) 115V SD Diode Forward Voltage I SD = 2A, T J = 25°C, V GS = 0V0.81.2V t rr Reverse Recovery TimeI SD = 2A 3 ,di SD /dt = 100A/μs,V DD = 100VT J = 25°C 170 195nST J = 125°C 330400Q rr Reverse Recovery ChargeT J = 25°C .510μCT J = 125°C 1.0I rrm Reverse Recovery Current T J = 25°C 6.0AT J = 125°C8.3dv/dtPeak Recovery dv/dtI SD ≤ 2A, di/dt ≤1000A μs, V DD = 800V,T J = 125°C20 V/nsMOSFET symbol showing the integral reverse p-n junction diode (body diode)050-8179 R e v A 10-20112468101214160.51.01.52.02.53.03.54.0246810APT4F120SV G S , G A T E -T O -S O U R C E V O L T A G E (V )g f s , T R A N S C O N D U C T A N C ER D S (O N ), D R A I N -T O -S O U R C E O N R E S I S T A N C EI D , D R A I N C U R R E N T (A )I S D , R E V E R S E D R A I N C U R R E N T (A )C , C A P A C I T A N C E (p F )I D , D R A I N C U R R E N T (A )I D , D R I A N C U R RV DS(ON), DRAIN-TO-SOURCE VOLTAGE (V)V DS , DRAIN-TO-SOURCE VOLTAGE (V)Figure 1, Output CharacteristicsFigure 2, Output CharacteristicsT J , JUNCTION TEMPERATURE (°C) V GS , GATE-TO-SOURCE VOLTAGE (V)Figure 3, R DS(ON) vs Junction Temperature Figure 4, Transfer CharacteristicsI D , DRAIN CURRENT (A) V DS , DRAIN-TO-SOURCE VOLTAGE (V)Figure 5, Gain vs Drain CurrentFigure 6, Capacitance vs Drain-to-Source Voltage Q g , TOTAL GATE CHARGE (nC)V SD , SOURCE-TO-DRAIN VOLTAGE (V)Figure 7, Gate Charge vs Gate-to-Source Voltage Figure 8, Reverse Drain Current vs Source-to-Drain Voltage3.02.52.01.51.00.5054321050-8179 R e v A 10-2011APT4F120SD 3PAK Package Outline1.22 (.048)1.32 (.052)4.98 (.196)5.08 (.200)1.47 (.058)1.57 (.062)2.67 (.105)2.84 (.112)0.46 (.018){3 Plcs}0.56 (.022)and Leads are Platedn 0.020 (.001)0.178 (.007)Dimensions in Millimeters (Inches)e3 100% Sn Plated00.100.200.300.400.500.600.700.8010-510-410-3 10-2 10 1.0-1 Z θJ C , T H E R M A L I M P E D A N C E (°C /W )RECTANGULAR PULSE DURATION (seconds)FIGURE 9. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION。
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SPECIFICATION FOR APPROV ALCUSTOMER: CUSTOMER’S P/N:VENDOR’S P/N: TL201209-2R7KA 2.0± 0.2 m/mB 1.2± 0.2 m/mC 0.9± 0.2 m/mD 0.5± 0.3 m/mE m/mF m/mG m/mH m/mI m/mJ m/mK m/mL m/mM m/mN m/mDIMENSION:(m/m)O m/mELECTRICAL REQUIREMENTSL 2.70 ± 10% μH TESTFREQ.10MHz/100mV Q 45 MIN. TESTFREQ.10MHz/100mVSrf 45 MHz MIN. TEST FREQ. MHzRdc 0.75 OHM. MAX. TEST FREQ. MHzIdc 30 mA MAX. TEST FREQ. MHzTEST INSTRUMENTS●HP 4338A MILLIOHMMETER○HP 4195A NETWORK/SPECTRUMANALYZER○HP 4284A BIAS CURRENT SOURCE○HP 4285A PRECISION LCR METER ○HP 4286A PRECISION LCR METER●HP 4291B RF IMPEDANCE/MATERIAL ANALYZER○HP 6632A DC POWER SUPPLY DRAWN BYJuli WangCHECKED BYJohn ChuangAPPROVED BYLionel LinTEST DATACUSTOMER:CUSTOMER’S P/N:SERIES NO: TL3059 VENDOR’S P/N:TL201209-2R7K DATE: MEAS A B C D L Q Rdc ITEM (m/m) (m/m) (m/m) (m/m) (μH) (Ω)SPEC 2.0 ± 0.21.2 ± 0.2 0.9 ±0.20.5±0.3 2.7 ±10%45 MIN. 0.75MAX. TESTFREQ. 10MHz10MHz1 2.00 1.23 0.93 0.50 2.56 65.6 0.4172 2.03 1.20 0.91 0.53 2.72 65.4 0.4213 2.04 1.22 0.89 0.52 2.64 62.4 0.4254 2.01 1.21 0.92 0.50 2.54 72.7 0.3965 2.00 1.23 0.90 0.51 2.58 68.5 0.4066 1.99 1.22 0.92 0.52 2.64 63.7 0.4157 2.02 1.20 0.89 0.53 2.60 71.2 0.4198 2.03 1.23 0.91 0.48 2.67 66.8 0.4159 2.01 1.21 0.92 0.53 2.60 60.9 0.43610 2.00 1.22 0.90 0.52 2.59 63.3 0.428A VG. 2.01 1.22 0.91 0.52 2.61 66.1 0.418R 0.05 0.03 0.04 0.05 0.18 11.8 0.040DRAWN BYJuli Wang CHECKED BYJohn ChuangAPPROVED BYLionel LinTYPICAL ELECTRICAL CHARACTERISTICS CURVE TL2012 TypeInductance VS. Frequency Impedance VS. FrequencyInductance VS. Temperature Q VS. FrequencyRELIABILITY TESTItemPerformanceTest conditionOperating temperature range-55 o C to + 125 oC Storage temperature and umidity ranges 40 oC MAX., 70% RH MAX.Soldering heat resistanceThe chip shall not be cracks.More than 75% of terminal electrode shall be covered with solder.Preheat: 150 o C, 60 secondsSolder temperature : 260 ± 5 oC Flux: RosinDip time: 10 ± 1 secondsSolderabilityMore than 90% of the terminal electrode shall be covered with new solder.Preheat: 150 o C, 60 seconds Solder temperature: 245 ± 5 o C Flux: RosinDip time: 4 ± 1 seconds245℃Recommended Soldering Conditions(REFLOW TEMPERATURE PROFILE) Lead-FreeA 260 ± 5℃B 230 ± 5℃C 30 ± 10 secD 150℃ E180℃ F90 ± 30secRELIABILITY TESTTerminal strength The terminal electrode and the body shall not be damaged by the forces applied on the right conditions.Bending strengthType P (kgf) Time (s)T 100505 0.3T 160808 0.5T 201209 0.6T 201212 0.8T 321611 1.0T 322513 1.0 30± 5T 451616 1.0T 453215 1.5TA3216M4 0.5The body shall not be damaged by the forcesapplied on the right conditions.Type A (mm) P (kgf)P(N)T 160808 1.0 0.5T 201209 1.4 1.0T 201212 1.4 1.2T 321611 2.0 2.0T 322513 2.0 2.5T 451616 2.5 2.5T 453215 2.7 2.5TA3216M4 1.4 1.0RELIABILITY TESTItemPerformanceTest conditionHigh temperature resistanceAppearance : Ferrite shall not be damaged. Inductance : Within ±10% of the initial value. Q: Within ±30% of the initial value.Temperature: 85±2℃Testing time: 1008±12 hoursMeasurement: After placing for 24 hours minHumidity resistance Appearance: Ferrite shall not be damaged.Inductance: Within ±10% of the initial value Q: Within ±30 % of the initial value.Humidity: 90 to 95% RH Temperature: 40±2℃Testing time: 1008±12 hoursMeasurement: After placing for 24 hours minThermal ShockAppearance: Cracking, chipping or any other defects harmful to the characteristics shall not be allowed.Inductance: Within ±10% of the initial value Q: Within ±30% of the initial value.Temperature: -40℃, +85℃, kept stabilized for 30 minutes eachCycle: 100 cyclesMeasurement: After placing for 24 hours minLow temperaturestorage life testAppearance: Cracking, chipping or any other defects harmful to the characteristics shall not be allowed. Inductance: Within ±10% of the initial value. Q: Within ±30% of the initial value.Temperature: -40±2℃Testing time: 1008±12 hours Measurement: After placing for 24 hours minPACKAGINGz Tape dimensions and packaging quantitiesCarrier tape material: papermaterial: Paper ( Dimensions in mm)TYPE A B W P T CHIPS / REEL 100505 0.62 1.12 8 2 0.60 10000 160808 1.10 1.90 8 4 0.95 4000 201209 1.50 2.30 8 4 0.954000material: Polystyrene ( Dimensions in mm)TYPE A B W P T CHIPS /REEL 160808 1.01 1.80 8 4 1.02 4000 201209 1.42 2.25 8 4 1.04 4000 201212 1.50 2.35 8 4 1.45 2000 321611 1.88 3.50 8 4 1.273000z Reel dimensionsDimensions in mmTYPE 8mm 12mm A 178±2 178±2 B 21.0±0.8 21.0±0.8 C13.0±0.8 13.0±0.8G 10.0 14.0 N 75 75T 12.5 16.5。