2SA1576A贴片三极管 SOT-323三极管封装2SA1576A参数

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贴片三极管参数大全

F24 DTD114EK Roh N SC59 npn dtr 10k + 10k 50V 500mA
F52 DTB123YC Roh N SOT23 pnp dtr 2k2 + 10k 50V 100mA
F2 BFS19 SGS N SOT23 BF184 BF494
F2p BFS19 Phi N SOT23 BF184 BF494
F2t BFS19 Phi N SOT23 BF184 BF494
F94 DTB114TK Roh N SC59 pnp dtr R110k 40V 100mA
EY BCW65GR Sie R SOT23R npn 45V 800mA hfe 160 min
EYAA MAX6326_R25-T Max ZB SOT23 microproc -ve reset gen 2.500V
Code Device Manufacturer Base Package Leaded Equivalent/Data
f BAS20-02W Sie I SCD80 -
F52 DTB123YK Roh N SC59 pnp dtr 2k2 + 10k 50V 100mA
F62 DTD123YK Roh N SC59 npn dtr 2k2 + 10k 50V 100mA
F3 MMBC1009F3 Mot N - RF npn fT150MHz hfe60-120
F4 BFS18R Phi N - BF495
F4 HSMP-3824 HP B SOT23 dual cc HP3820 pin sw diode
EJAA MAX6328_R22-T Max ZB SOT23 microproc -ve reset gen 2.200V

MMST4403贴片三极管 SOT-323三极管封装MMST4403规格参数

A,Oct,2010JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTDSOT-323 Plastic-Encapsulate TransistorsMMST4403 TRANSISTOR (PNP)FEATURES● Complementary To MMST4401● Small Surface Mount PackageMARKING:K3TMAXIMUM RATINGS (T a =25℃ unless otherwise noted) SymbolParameter Value Unit V CBOCollector-Base Voltage -40 V V CEOCollector-Emitter Voltage -40 V V EBOEmitter-Base Voltage -5 V I CCollector Current -600 mA P CCollector Power Dissipation 200 mW R ΘJAThermal Resistance From Junction To Ambient 625 ℃/W T jJunction Temperature 150 ℃ T stg Storage Temperature -55～+150 ℃ ELECTRICAL CHARACTERISTICS (Ta =25℃ unless otherwise specified) ParameterSymbol Test conditions Min Typ MaxUnit Collector-base breakdown voltageV (BR)CBO I C =-100µA, I E =0 -40 V Collector-emitter breakdown voltageV (BR)CEO I C =-1mA, I B =0 -40 V Emitter-base breakdown voltageV (BR)EBO I E =-100µA, I C =0 -5 V Collector cut-off currentI CBO V CB =-35V, I E =0 -100 nA Collector cut-off current I CEO V CE =-35V, I B =0-500 nA V CE =-1V, I C =-100µA30 V CE =-1V, I C =-1mA60 V CE =-1V, I C =-10mA100 V CE =-2V, I C =-150mA100 300 DC current gain h FE V CE =-2V, I C =-500mA20 I C =-150mA, I B =-15mA -0.4 V Collector-emitter saturation voltageV CE(sat) I C =-500mA, I B =-50mA -0.75 V I C =-150mA, I B =-15mA -0.75 -0.95 V Base-emitter saturation voltageV BE(sat) I C =-500mA, I B =-50mA -1.3 V Transition frequencyf T V CE =-10V,I C =-20mA , f=100MHz 200 MHz Collector output capacitance C ob V CB =-10V, I E =0, f=1MHz 8.5 pF 【南京南山半导体有限公司 — 长电三极管选型资料】【南京南山半导体有限公司 — 长电三极管选型资料】The bottom gasketThe top gasket3000×1 PCS 3000×15 PCS Label on the Reel Label on the Inner Box Label on the Outer Box QA Label Seal the boxwith the tape Seal the boxwith the tape Stamp “EMPTY”on the empty box Inner Box: 210mm ×208mm ×２０３m m Outer Box: 440mm ×440mm ×230mm。

2SA1611贴片三极管 SOT-323三极管封装2SA1611参数

Dimensions In Millimeters
Min.
Max.
0.900
1.100
0.000
0.100
0.900
1.000
0.200
0.400
0.080
0.150
2.000
2.200
1.150
1.3502.150 Nhomakorabea2.450
0.650 TYP.
1.200
1.400
0.525 REF.
0.260
0.460
0°
8°
The bottom gasket
3000×15 PCS
Label on the Reel 3000×1 PCS
Seal the box with the tape
The top gasket
Stamp “EMPTY” on the empty box
Seal the box with the tape
FEATURES High DC Current Gain High Voltage Complementary to 2SC4177
SOT–323
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
Collector output capacitance
Cob
*Pulse test: pulse width ≤350μs, duty cycle≤ 2.0%.
CLASSIFICATION OF hFE
RANK
RANGE

贴片F系列三极管参数

Base I I N C N N X K N N D N N N N N B N N N N N N N N X N N N N N N N N N N N B P X P ZB X ZB
Package SCD80 URD SOT323 SOT23 SC59 SC59 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT323 SC59 SC59 SOT23 SC59 SC59 SC59 SC59 SOT23 SC59 SC59 SOT23 SC59 SC59 SC59 SC59 SC59 SOT23 SOT89 SOT89 SOT23 SOT23
Leaded Equivalent/Data uhf varicap 2.5-22pf npn RF fT 8GHz 35V RF pin sw diode npn dtr R1 2k2 40V 100mA npn dtr R1 4k7 40V 100mA fT 12GHz npn RF 4V 12mA 35V RF pin sw diode BF495 RF npn fT 150MHz hfe30-60 dual series HP3820 pin sw diode BF184 BF494 BF184 BF494 BF184 BF494 RF npn fT150MHz hfe60-120 BF495 dual cc HP3820 pin sw diode BF184 BF494 pnp dtr 1k + 1k 50V 500mA pnp dtr 2k2 + 2k2 50V 500mA pnp dtr 4k7+ 4k7 50V 500mA pnp dtr 4k7+ 4k7 50V 500mA pnp dtr 10k + 10k 50V 500mA fT 12GHz npn 6V 20mA npn dtr 1k + 1k 50V 500mA npn dtr 2k2 + 2k2 50V 500mA npn dtr 4k7 + 4k7 50V 500mA npn dtr 4k7 + 4k7 50V 500mA npn dtr 10k + 10k 50V 500mA pnp dtr 2k2 + 10k 50V 100mA pnp dtr 2k2 + 10k 50V 100mA npn dtr 2k2 + 10k 50V 100mA pnp dtr R1 2k2 40V 100mA pnp dtr R1 4k7 40V 100mA pnp dtr R110k 40V 100mA 0.5-3GHz cc pin dual anode npn RF 1.5GHz 300mA BFQ69 npn RF Ft 5.5GHz 100mA microproc -ve reset gen 2.700V BFW92 microproc -ve reset gen 2.800V

PZTA42贴片三极管 SOT-323三极管封装PZTA42规格参数

Symbol Para
meter
Value
Unit
VCBO
Collector-Base Voltage
300
V
VCEO
Collector-Emitter Voltage
300
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current -Continuous
0.2
A
ICM
VCE(sat) IC=20mA,IB=2mA
VBE(sat) IC=20mA,IB=2mA
fT
VCE=20V,IC=10mA,f=100MHz
Cob
VCB=20V,IE=0,f=1MHz
Min Typ Max Unit
300
V
300
V
6
V
0.1
μA
0.1
μA
25
40
40
0.5
V
0.9
V
50
MHz
3
8
40000
2. 7 寸包装流程图(Packing procedure)：
2 包装规格（Packing spec）：
封装载带/盖带
卷盘
包装箱
PKG
tape
Reel
Box
只/盘盘/盒
只/盒
pcs/reel reel/box pcs/box
7”盘 SOT-23 包
SOT-223 IC-ZD-04 (IC-JP-04) 装箱 *1 1000
pF
B,May,2012
【南京南山半导体有限公司 — 长电三极管选型资料】

贴片三极管F

贴片元件标示代号查询-代换资料
表示符号
f F F F0 F02 F03 F05 F1 F1 F1 F2 F2 F2p F2t F3 F4 F4 F5 F8p F8t F8t F11 F12 F13 F13 F14 F20 F21 F22 F23 F23
生产结实际元件
BAS20-02W KV1831E MRF927 HSMP-3820 DTD123TK DTD143TK TSDF1205 HSMP-3821 BFS18 MMBC1009F1 HSMP-3822 BFS19 BFS19 BFS19 MMBC1009F3 BFS18R HSMP-3824 BFS19R BF824 BF824 BF824W DTB113EK DTB123EK DTB143EC DTB143EK DTB114EK TSDF1220 DTD113EK DTD123EK DTD143EC DTD143EK
FZAP FZAQ FZAR FZAS FZAT FZAU FZAV FZAW FZAX FZAY FZAZ FZBA FZBB FZBC FZBD FZBE FZBF FZBG FZBH FZBI FZBJ FZBK FZBL FZBM FZBN FZBO FZBP FZBQ FZBR FZBS FZBT FZBU FZBV FZBW
Phi Phi Phi Sie Max Sie Max Max Sie Max Sie Max Sie Max Max Max Max Max Phi Phi Max Roh Roh Roh Phi Phi Max Phi Phi Max Max Max Max Max
N N N P ZB N ZB ZB N ZB N ZB N ZB ZB ZB ZB ZB N N ZB N N N N N ZB N N ZB ZB ZB ZB ZB

2SC4116贴片三极管 SOT-323三极管封装2SC4116规格参数

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC TJ Tstg
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Junction and Storage Temperature
0°
8°
The bottom gasket
3000×15 PCS
Label on the Reel 3000×1 PCS
Seal the box with the tape
The top gasket
Stamp “EMPTY” on the empty box
Seal the box with the tape
CLASSIFICATION OF hFE Rank Range
Marking
O 70-140
LO
Y
LG
BL 350-700
LL
B,Dec,2011
Typical Characteristics
2SC4116
COLLECTOR CURRENT I (mA) C
0°
8°
Dimensions In Inches
Min.
Max.
0.035
0.043
0.000
0.004
0.035
0.039
0.008
0.016
0.003

三极管参数大全

15A 10A 15A 16A 10A 10A 10A 7A 2A 6A 8A 10A 0.2A 7A 电流Icm 10A 6A 6A 14A 10A 8A 6A 5A 4A 3A 10A 8A 6A 5A 3A 电流Icm 6A 5A 3.5A 7A 6A 5A 3.5A 7A 6A 6A 5A 3.5A 2.5A 6A 5A 电流Icm 3.5A 5A 4A 5A
反压Vbe0 400V 1500V 90V 1500V 1500V 120V 180V 60V 60V 80V 40V 60V 50V 100V 120V 反压Vbe0 180V 100V 50V 60V 180V 120V 150V 100V 80V 80V 25V 80V 350V 160V 150V 反压Vbe0 200V 100V 100V 180V 120V 150V 600V 500V 120V 100V 50V 40V 1500V 1500V 1000V 反压Vbe0 1500V
10A 8A 7A 6A 6A 5A 3.5A 6A 电流Icm 5A 3.5A 5A 5A 2A 7.5A 6A 5A 5A 5A 5A 5A 3A 2A 0.1A 电流Icm 0.1A 2A 0.07A 0.015A 0.15A 1A 0.02A 0.2A 0.2A 0.05A 0.02A 0.1A 0.1A 7A 4A 电流Icm 0.05A 0.05A 1.5A 5A 0.1A 1.5A 0.7A 7A 0.1A 3A
2SC5243 2SC5207 2sc5200 2sc5132 2sc5088 2sc5086 2sc5068 2sc5020 2sc4953 2sc4941 2sc4927 2sc4924 2sc4913 2sc4769 晶体管型号 2sc4747 2sc4745 2sc4742 2sc4706 2SD1887 2SD1886 2SD1885 2SD1884 2SD1883 2SD1882 2SD1881 2SD1880 2SD1879 2SD1878 2SD1876 晶体管型号 2SD1739 2SD1738 2SD1737 2SD1732 2SD1731 2SD1730 2SD1729 2SD1711 2SD1710 2SD1656 2SD1655 2SD1654 2SD1653 2SD1652 2SD1651 晶体管型号 2SD1650 2SD1635 2SD1632 2SD1577

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The bottom gasket
Label on the Reel 3000×15 PCS 3000×1 PCS
The top gasket Stamp “EMPTY” on the empty box Seal the box with the tape
Seal the box with the tape
Dimensions In Inches Min. Max. 0.035 0.043 0.000 0.004 0.035 0.039 0.008 0.016 0.003 0.006 0.079 0.087 0.045 0.053 0.085 0.096 0.026 TYP. 0.047 0.055 0.021 REF. 0.010 0.018 0° 8°
1. BASE 2. EMITTER 3. COLLECTOR
FEATURES Excellent hFE linearity Complements the 2SC4081 MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value -60 -50 -6 -150 200 150 -55-150 Unit V V V mA mW ℃ ℃
10
1 -0.1
-1
-10
-20
-1
-10
-30
REVERSE BIAS VOLTAGE
V
(V)
COLLECTOR CURRENT
IC
(mA)
250
PC
——
Ta
COLLECTOR POWER DISSIPATION PC (mW)
200
150
100
50
0 0 25 50 75 100 125 150
(mA)
COLLECTOR CURRENT
IC
(mA)
Cob / Cib
50
——
VCB / VEB
(MHz) f=1MHz IE=0 / IC=0 Ta=25℃
1000
fT
——
IC
(pF)
10
CAPACITANCE
Cib
TRANSITION FREQUENCY
C
fT
100
Cob
VCE=-12V Ta=25℃
CLASSIFICATION OF hFE Rank Range Marking Q 120-270 FQ R 180-390 FR S 270-560 FS
A,May,2011
Typical Characteristics
-7
2SA1576A
hFE —— IC
Ta=100℃
Static Characteristic
-20uA -18uA -16uA -14uA COMMON EMITTER Ta=25℃ hFE DC CURRENT GAIN1000(mA)
-6
IC
-5
COLLECTOR CURRENT
Ta=25℃
100
-4
-12uA -10uA
-3
-8uA
-2
-6uA -4uA
-1
IB=-2uA
-0 -0 -2 -4 -6 -8 -10 -12 10 -1 -10
QA Label
Label on the Inner Box Inner Box: 210mm×208mm×２０３mm
Label on the Outer Box Outer Box: 440mm×440mm×230mm
COMMON EMITTER VCE= -6V
-100 -150
COLLECTOR-EMITTER VOLTAGE
VCE
(V)
COLLECTOR CURRENT
IC
(mA)
-300
VCEsat ——
IC
β=10
VBEsat ——
-1000
IC
β=10
COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV)
BASE-EMITTER SATURATION VOLTAGE VBEsat (mV)
-800
-200
Ta=25℃
-600
Ta=100℃
-100
Ta=100℃
Ta=25℃
-400
-0 -1 -10 -100 -150
-200 -0.1
-1
-10
-100 -150
COLLECTOR CURRENT
IC
AMBIENT TEMPERATURE
Ta
(℃ )
A,May,2011
【南京南山半导体有限公司 — 长电三极管选型资料】

Symbol A A1 A2 b c D E E1 e e1 L L1 θ
Dimensions In Millimeters Min. Max. 0.900 1.100 0.000 0.100 0.900 1.000 0.200 0.400 0.080 0.150 2.000 2.200 1.150 1.350 2.150 2.450 0.650 TYP. 1.200 1.400 0.525 REF. 0.260 0.460 0° 8°
ELECTRICAL CHARACTERISTICS (Ta=25 ℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob Test conditions IC=-50μA,IE=0 IC=-1mA,IB=0 IE=-50μA,IC=0 VCB=-60V,IE=0 VEB=-6V,IC=0 VCE=-6V,IC=-1mA IC=-50mA,IB=-5mA VCE=-12V,IC=-2mA,f=30MHz VCB=-12V,IE=0,f=1MHz 140 4 5 120 Min -60 -50 -6 -0.1 -0.1 560 -0.5 V MHz pF Typ Max Unit V V V μA μA
【南京南山半导体有限公司 — 长电三极管选型资料】

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Transistors
SOT-323
2SA1576A
TRANSISTOR (PNP)