HFS2N60S

Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
* Drain current limited by maximum junction temperature
10
V = 300V
DS
V = 480V DS
8
6
4
2 * Note : I = 2.0A
D
0
0
2
4
6
8
Q , Total Gate Charge [nC] G
Figure 6. Gate Charge Characteristics
◎ SEMIHOW REV.A0,Nov 2007
Capacitance [pF]
--
IDSS Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V
--
VDS = 480 V, TC = 125℃
--
IGSSF Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
VSD Source-Drain Diode Forward Voltage IS = 2.0 A, VGS = 0 V
--
trr Reverse Recovery Time Qrr Reverse Recovery Charge
IS = 2.0 A, VGS = 0 V
--
diF/dt = 100 A/μs (Note 4)
100 μs
1 ms
10 ms
100
100 ms
DC
10-1
* Notes :
1. T = 25 oC C
2. T = 150 oC J
3. Singห้องสมุดไป่ตู้e Pulse
10-2
100
101
102
103
V , Drain-Source Voltage [V] DS
Figure 9. Maximum Safe Operating Area
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
PD
Power Dissipation (TC = 25℃)
- Derate above 25℃
TJ, TSTG TL
R , (Normalized) DS(ON)
Drain-Source On-Resistance
I , Drain Current [A]
D
3.0
2.5
2.0
1.5
1.0
0.5
0.0 -100
∗ Note : 1. V = 10 V
GS
2. I = 1.0 A D
-50
0
50
100
150
200
T , Junction Temperature [oC] J
Figure 2. Transfer Characteristics
VSD, Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature
12
V = 120V DS
--
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 ㎂
600
ΔBVDSS Breakdown Voltage Temperature /ΔTJ Coefficient
ID = 250 ㎂, Referenced to 25℃
Figure 1. On Region Characteristics
12
9 V = 10V
GS
6
V = 20V GS
3
* Note : T = 25oC J
0
0
1
2
3
4
5
I , Drain Current[A]
D
Figure 3. On Resistance Variation vs Drain Current and Gate Voltage
Figure 8. On-Resistance Variation vs Temperature
2.0
1.5
1.0
0.5
0.0
25
50
75
100
125
150
T , Case Temperature [oC] C
Figure 10. Maximum Drain Current vs Case Temperature
TO-220F
123
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
VGS, Gate-Source Voltage [V]
IDR, Reverse Drain Current [A]
VGS, Gate-Source Voltage [V]
3 . T - T = P * Z (t)
JM
C
DM
θJC
PDM
sin g le p u lse
t1 t2
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t , S q u a re W a ve P u ls e D u ra tio n [s e c ] 1
◎ SEMIHOW REV.A0,Nov 2007
HFS2N60S
Typical Characteristics
ID, Drain Current [A]
ID, Drain Current [A]
R [Ω], DS(ON)
Drain-Source On-Resistance
VDS, Drain-Source Voltage [V]
HFS2N60S
Typical Characteristics (continued)
BVDSS, (Normalized) Drain-Source Breakdown Voltage
ID, Drain Current [A]
1.2
1.1
1.0
0.9
* Note :
1. V = 0 V GS
2. I = 250 μA D
--
f = 1.0 MHz
Crss Reverse Transfer Capacitance
--
Switching Characteristics
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf
Turn-Off Fall Time
HFS2N60S
Nov 2007
HFS2N60S
600V N-Channel MOSFET
BVDSS = 600 V RDS(on) typ = 4.2 Ω ID = 2.0 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.0 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 4.2 Ω (Typ.) @VGS=10V 100% Avalanche Tested
V
230 --
㎱
1.0
--
μC
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=56mH, IAS=2.0A, VDD=50V, RG=25Ω, Starting TJ =25°C 3. ISD≤2.0A, di/dt≤200A/μs, VDD≤BVDSS , Starting TJ =25 °C 4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature
Z (t), Thermal Response θJC
101
D = 0.5
100 1 0 -1
0 .2 0 .1 0 .0 5
0 .0 2 0 .0 1