2SA935三极管封装TO-92L
2SA1318三极管参数 TO-92直插三极管2SA1318规格书
A,Dec,20102. COLLECTORJIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTDTO-92 Plastic-Encapsulate Transistors2SA1318 TRANSISTOR (PNP)FEATURESz Large Current Capacity and Wide ASOAPPLICATIONSz Capable of Being Used in The Low Frequency to HighFrequency RangeMAXIMUM RATINGS (T a =25℃ unless otherwise noted)ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified)ParameterSymbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =-0.01mA,I E =0 -60 V Collector-emitter breakdown voltage V (BR)CEOI C =-1mA,I B =0 -50V Emitter-base breakdown voltage V (BR)EBOI E =-0.01mA,I C =0 -6VCollector cut-off current I CBO V CB =-40V,I E =0 -0.1 μA Emitter cut-off current I EBO V EB =-5V,I C =0 -0.1 μA h FE(1) V CE =-6V, I C =-1mA 100 560DC current gainh FE(2) V CE =-6V, I C =-0.1mA 70 Collector-emitter saturation voltage V CE(sat)I C =-100mA,I B =-10mA -0.3 V Base-emitter saturation voltage V BE (sat)I C =-100mA,I B =-10mA -1.0 V Collector output capacitance C ob V CB =-6V, f=1MHz 4.5pF Transition frequencyf TV CE =-6V,I C =-10mA200MHzCLASSIFICATION OF h FE(1)RANK R STURANGE 100-200 140-280 200-400 280-560Symbol Parameter Value Unit V CBO Collector-Base Voltage -60 V V CEO Collector-Emitter Voltage -50 V V EBO Emitter-Base Voltage -6 V I C Collector Current-0.2 A P C Collector Power Dissipation500 mW R θJA Thermal Resistance From Junction To Ambient 250 ℃/W T j Junction Temperature 150 ℃ T stgStorage Temperature-55~+150℃【南京南山半导体有限公司 — 长电三极管选型资料】 【南京南山半导体有限公司 — 长电三极管选型资料】 【南京南山半导体有限公司 — 长电三极管选型资料】Sponge strip2000 pcsSponge strip The top gasketLabel on the Inner BoxPlastic bagLabel on the Outer BoxInner Box: 333 mm ×162mm ×43mmOuter Box: 350 mm × 340mm × 250mmQA LabelSeal the box with the tapeStamp “EMPTY” on the empty boxInner Box: 240 mm ×165mm ×９５mmLabel on the Inner BoxOuter Box: 525 mm × 360mm × 262mmLabel on the Outer BoxQA LabelSeal the box with the tapeStamp “EMPTY” on the empty box。
2SB892三极管(TO-92L)
【 南京南山半导体有限公司 — 长电三极管选型资料】
Sponge strip
Sponge strip
2000 pcs
The top gasket
Label on the Inner Box
Inner Box: 333 mm×203mm×42mm
Stamp “EMPTY” on the empty box
FEATURE z Power Supplies, Relay Drivers, Lamp Drivers, and Automotive Wiring z Low Saturation Voltage. z Large Current Capacity and Wide ASO.
TO-92L
1. EMITTER 2. COLLECTOR 3. BASE
2.440
2.640
13.800
14.200
1.600
0.000
0.300
Dimensions In Inches
Min.
Max.
0.146
0.161
0.050
0.062
0.014
0.022
0.024
0.031
0.014
0.018
0.185
0.201
0.157
0.307
0.323
0.050 TYP.
-150
COMMON EMITTER Ta=25℃-Fra bibliotek00-50
-0.50mA -0.45mA -0.40mA -0.35mA -0.30mA -0.25mA -0.20mA
-0.15mA -0.10mA
-0 -0.0
2SA1013三极管(TO-92MOD)
Dimensions In Millimeters Min. Max. 4.700 5.100 1.730 2.030 0.400 0.600 0.900 1.100 0.400 0.500 5.800 6.200 4.000 8.400 8.800 1.500 TYP. 2.900 3.100 13.800 14.200 1.600 0.000 0.380
【 南京南山半导体有限公司 — 长电三极管选型资料】
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92MOD Plastic-Encapsulate Transistors
2SA1013
TRANSISTOR (PNP) TO-92MOD
IC=- 100μA , IE=0 IC= -1mA , IB=0 IE= -10μA, IC=0 VCB=-150 V , IE=0 VEB=-6V, IC=0 VCE=-5 V, IC=- 200mA IC= -500m A, IB= -50mA IC= -5mA, VCE=- 5V VCE= -5 V, IC= -200mA VCB=-10V, IE=0,f=1MHz
Dimensions In Inches Min. Max. 0.185 0.201 0.068 0.080 0.016 0.024 0.035 0.043 0.016 0.020 0.228 0.244 0.157 0.331 0.346 0.059 TYP. 0.114 0.122 0.543 0.559 0.063 0.000 0.015
Symbol A1 A T d d1 P P0 P2 F1,F2 △h W W0 W1 W2 H H0 L1 D0 t1 t2 P1 △P
S9014三极管参数 TO-92三极管S9014规格书
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate TransistorsS9014 TRANSISTOR(NPN)FEATURES z High Total Power Dissipation.(P C =0.45W)z High h FE and Good Linearity z Complementary to S9015MAXIMUM RATINGS (T a =25℃ unless otherwise noted)ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified)ParameterSymbol Test conditionsM in T yp Max UnitCollector-base breakdown voltage V (BR)CBOI C =100μA, I E =0 50 VCollector-emitter breakdown voltage V (BR)CEO I C = 1mA, I B =0 45 V Emitter-base breakdown voltage V (BR)EBO I E =100μA, I C =0 5 V Collector cut-off current I CBO V CB =50V, I E =0 0.1 μA Collector cut-off current I CEO V CE =35V, I B =0 0.1 μA Emitter cut-off current I EBO V EB = 5V, I C =0 0.1 μA DC current gainh FEV CE =5V, I C = 1mA60 1000 Collector-emitter saturation voltage V CE (sat) I C =100mA, I B = 5mA 0.3 V Base-emitter saturation voltage V BE (sat) I C =100mA, I B = 5mA1VTransition frequencyf TV CE =5V, I C = 10mA f=30MHz150 MHzCLASSIFICATION OF h FE(1) Rank A B C D Range60-150 100-300 200-600 400-1000TO-921. EMITTER2. BASE3. COLLECTORA,Apr,2011【南京南山半导体有限公司 — 长电三极管选型资料】10010000200400600800100012002550751001251101101001000875432610C O L L E C T O R C U R R E N T I C (m A )Static Characteristic5000B A S E -E M M I T E R V O L T A G E V B E (m V )B A S E -E M I T T E R S A T U R A T I O N V O L T A G E V B E s a t (m V )AMBIENT TEMPERATURE Ta ()℃S9014Typical CharacterisiticsT R A N S I T I O N F R E Q U E N C Y f T (M H z )COLLECTOR CURRENT I C (mA)60I Ch FE —— A,Apr,2011 【南京南山半导体有限公司 — 长电三极管选型资料】 【南京南山半导体有限公司 — 长电三极管选型资料】Sponge strip2000 pcsSponge strip The top gasketLabel on the Inner BoxPlastic bagLabel on the Outer BoxInner Box: 333 mm ×162mm ×43mmOuter Box: 350 mm × 340mm × 250mmQA LabelSeal the box with the tapeStamp “EMPTY” on the empty boxInner Box: 240 mm ×165mm ×９５mmLabel on the Inner BoxOuter Box: 525 mm × 360mm × 262mmLabel on the Outer BoxQA LabelSeal the box with the tapeStamp “EMPTY” on the empty box。
2SA673A三极管参数 TO-92三极管2SA673A规格书
A,Dec,20102. COLLECTORJIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTDTO-92 Plastic-Encapsulate Transistors2SA673A TRANSISTOR (PNP)FEATURESz Low Frequency Amplifierz Complementary Pair with 2SC1213AMAXIMUM RATINGS (T a =25℃ unless otherwise noted)ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified)ParameterSymbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =-0.01mA,I E =0 -50 V Collector-emitter breakdown voltage V (BR)CEOI C =-1mA,I B =0 -50V Emitter-base breakdown voltage V (BR)EBOI E =-0.01mA,I C =0 -4VCollector cut-off current I CBO V CB =-20V,I E =0 -0.5 μA Emitter cut-off current I EBO V EB =-3V,I C =0 -0.5 μA h FE(1) V CE =-3V, I C =-10mA 60 320 DC current gainh FE(2)*VCE =-3V, I C =-500mA 10Collector-emitter saturation voltage V CE(sat) *I C =-150mA,I B =-15mA -0.6 VBase-emitter voltageV BEV CE =-3V, I C =-10mA-0.75V*Pulse test: pulse width ≤300μs, duty cycle ≤ 2.0%.CLASSIFICATION OF h FE(1)RANK B CDRANGE 60-120 100-200 160-320Symbol Parameter Value Unit V CBO Collector-Base Voltage -50 V V CEO Collector-Emitter Voltage -50 V V EBO Emitter-Base Voltage -4 V I C Collector Current-0.5 A P C Collector Power Dissipation400 mW R θJA Thermal Resistance From Junction To Ambient 312 ℃/W T j Junction Temperature 150 ℃ T stgStorage Temperature-55~+150℃【南京南山半导体有限公司 — 长电三极管选型资料】 【南京南山半导体有限公司 — 长电三极管选型资料】 【南京南山半导体有限公司 — 长电三极管选型资料】Sponge strip2000 pcsSponge strip The top gasketLabel on the Inner BoxPlastic bagLabel on the Outer BoxInner Box: 333 mm ×162mm ×43mmOuter Box: 350 mm × 340mm × 250mmQA LabelSeal the box with the tapeStamp “EMPTY” on the empty boxInner Box: 240 mm ×165mm ×９５mmLabel on the Inner BoxOuter Box: 525 mm × 360mm × 262mmLabel on the Outer BoxQA LabelSeal the box with the tapeStamp “EMPTY” on the empty box。
2SA系列(PNP型)三极管全参数表
-1.5
-180
-160
120M
60-200
3CA10F
2SA1011S
SANYO
硅PNP三极管,功率放大，场输出，配对管2SC2344
25
-1.5
-180
-160
120M
60-200
3CA10F
2SA1011W
WS
硅PNP三极管,功率放大，场输出，配对管2SC2344
25
-1.5
-180
-160
200m
-500m
-40
-32
200M
82-390
2SA1037AK
ROHM
硅PNP三极管,一般小信号放大，配对管2SC2412K
200m
-150m
-60
-50
140M
120-560
2SA1037B
LRC
硅PNP三极管,一般小信号放大，配对管2SC2412K/2SC4081
200m
-150m
-60
-50
-25
200M
50-340
CK77A
2SA0684
PANASONIC
硅PNP三极管,低频功率放大和驱动，配对管2SC1384
1
-1.5
-60
-50
200M
50-340
CK77A
2SA0794
PANASONIC
硅PNP三极管,低频功率放大和驱动，配对管2SC1567
1.2
-500m
-100
-100
120M
60M
70-240
3CA10D
2SA1013
长电
硅PNP三极管,TO-92，放大
2SA720三极管参数 TO-92三极管2SA720规格书
-10
-100
-500
COLLECTOR CURRENT IC (mA)
V BEsat
—— I C
-100
-10 -0.3
-500 -100
Ta=100℃
Ta=25℃
-1
-10
-100
COLLECTOR CURRENT IC (mA)
I
C
—— V BE
β=10
-500
BASE-EMITTER SATURATION VOLTAGE VBEsat (V)
COLLECTOR-EMITTER VOLTAGE VCE (V)
V
—— I
CEsat
C
DC CURRENT GAIN hFE
1000
100
10 -5
-2
2SA719/2SA720
h —— I
FE
C
Ta=100℃ Ta=25℃
COMMON EMITTER VCE= -10V
Sponge strip
Sponge strip
2000 pcs
The top gasket
Label on the Inner Box
Inner Box: 333 mm×162mm×43mm Plastic bag
Stamp “EMPTY” on the empty box
Label on the Inner Box
Stamp “EMPTY” on the empty box
Seal the box with the tape
QA Label
Outer Box: 525 mm× 360mm× 262mm
Label on the Outer Box
2SA684三极管封装TO-92L
VBE(sat) IC=-500mA, IB=-50mA
Transition frequency
fT
VCE=-10V, IE=50mA, f=200MHz
Collector output capacitance
Cob
VCB=-10V, IE=0, f=1MHz
Typ
-0.2 -0.85 200
20
Unit V V V A W ℃ ℃
Seal the box with the tape
QA Label
Outer Box: 493 mm× 400mm× 264mm The top gasket
Label on the Outer Box
【 南京南山半导体有限公司 — 长电三极管选型资料】
Inner Box: 240 mm×165mm×９５mm
【 南京南山半导体有限公司 — 长电三极管选型资料】
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92L Plastic-Encapsulate Transistors
2SA684 TRANSISTOR (PNP)
ICBO
VCB=-20V, IE=0
DC current IC=-500mA
85
hFE(2) VCE=-5V, IC=-1A
50
Collector-emitter saturation voltage
VCE(sat) IC=-500mA, IB=-50mA
Base-emitter saturation voltage
a
100
-1000
TRANSITION FREQUENCY f (MHz) T
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A,Dec,2010
2. COLLECTOR
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92L Plastic-Encapsulate Transistors
2SA935 TRANSISTOR (PNP)
FEATURES
z General Purpose Switching Application
MAXIMUM RATINGS (T a =25℃ unless otherwise noted)
ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified)
Parameter
Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C = -50µA,I E =
0 -80 V Collector-emitter breakdown voltage V (BR)CEO
I C =-2mA,I B =
0 -80 V Emitter-base breakdown voltage V (BR)EBO
I E =-50µA,I C =0 -5
V
Collector cut-off current I CBO V CB =-50V,I E =
0 -0.5 μA Emitter cut-off current I EBO
V EB =-4V,I C =
0 -0.5 μA DC current gain
h FE
V CE =-3V, I C =-100mA 82 390
Collector-emitter saturation voltage V CE(sat)
I C =-500mA,I B =-50mA -0.4 V Collector output capacitance C ob V CB =-10V,I E =0, f=1MHz 20 pF
Transition frequency
f T
V CE =-10V,I C =-50mA
100 MHz
CLASSIFICATION OF h FE
RANK P Q
R
RANGE 82-180 120-270 180-390
Symbol Parameter Value Unit V CBO Collector-Base Voltage -80 V V CEO Collector-Emitter Voltage -80 V V EBO Emitter-Base Voltage -5 V I C Collector Current
-0.7 A P C Collector Power Dissipation
750 mW R θJA Thermal Resistance From Junction To Ambient 167 ℃/W T j Junction Temperature 150 ℃ T stg
Storage Temperature
-55~+150
℃
【南京南山半导体有限公司 — 长电三极管选型资料】
Sponge strip
2000 pcs
Sponge strip The top gasket
Label on the Inner Box
Label on the Outer Box
Inner Box: 333 mm ×203mm ×42mm
Outer Box: 493 mm × 400mm × 264mm
QA Label
Seal the box with the tape
Stamp “EMPTY”
on the empty box
The top gasket
Inner Box: 240 mm ×165mm ×９５mm
Label on the Inner Box
Outer Box: 525 mm × 360mm × 262mm
Label on the Outer Box
QA Label
Seal the box with the tape
Stamp “EMPTY” on the empty box。