3LP03S中文资料

1.6 0.5 0.5
1 2
3
0.1
0 to 0.1
0.1 MIN
1 : Gate 2 : Source 3 : Drain SANYO : SMCP
0.75 0.6
3LP03S P.G 50Ω S
--0.30
ID -- VDS
0V
V
--3. 5
--0.50
ID -- VGS
Ta= --25 °
75° C 25° C
Ambient Temperature, Ta -- °C
IT07656
No. A0010-2/4
元器件交易网
3LP03S
1.0
yfs -- ID
VDS= --10V
Forward Transfer Admittance, yfs -- S
7 5 3 2
--1.0 7 5 3 2 --0.1 7 5 3 2 --0.01 7 5 3 2
Ta=7 5°C 25°C --25°C
--0.6 --0.8
°C
Source Current, IS -- A
--1.0
--1.2
--1.4
Diode Forward Voltage, VSD -- V
IT07658
SW Time -- ID
VDS= --15V VGS= --4V
Ciss, Coss, Crss -- pF
C
VDS= --10V
--3.5
Drain-to-Source Voltage, VDS -- V
5.0 4.5
IT07653
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 --60
IT07654
元器件交易网
3LP03S
Continued from preceding page.
Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--10V, VGS=-4V, ID=--250mA VDS=--10V, VGS=-4V, ID=--250mA VDS=--10V, VGS=-4V, ID=--250mA IS=--250mA, VGS=0V Ratings min typ 9.5 5 15 13 0.8 0.3 0.2 --0.9 --1.2 max Unit ns ns ns ns nC nC nC V
(*1) : Note, when designing a circuit using this product, that it has a gate (oxide film) protection diode connected only between its gate and source.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
81005PE MS IM TA-101200 No. A0010-1/4
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss Conditions ID=--1mA, VGS=0V VDS=-30V, VGS=0V VGS=--8V, VDS=0V VDS=-10V, ID=--100µA VDS=-10V, ID=--120mA ID=--120mA, VGS=--4V ID=--60mA, VGS=--2.5V ID=--10mA, VGS=--1.5V VDS=-10V, f=1MHz VDS=-10V, f=1MHz VDS=-10V, f=1MHz Ratings min --30 --1 --1 --0.4 0.24 0.4 1.5 2.0 4.0 40 8 4.5 1.9 2.8 8.0 --1.4 typ max Unit V µA µA V S Ω Ω Ω pF pF pF
--60mA
--6 I D=
, VG 0mA
--2 S=
.5V
I D= --
A, 120m
= --4. VGS
0V
--2
--3
--4
--5
--6
--7
--8
--9--10--40 Nhomakorabea--20
0
20
40
60
80
100
120
140
Gate-to-Source Voltage, VGS -- V
IT08162
VGS= --1.5V
--0.10
--0.05 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 0 0 --0.5
25°
--0.05
C
--0.10
--1.0
Ta= 75° C --25 °C
--0.15
--1.5
--2.0
Drain Current, ID -- A
Drain-to-Source Voltage, VDS -- V
--4.0 --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0
VGS -- Qg
RDS(on) -- ID
Static Drain-to-Source On-State Resistance, RDS(on) -- Ω
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage (*1) Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions Ratings --30 --10 --0.25 --1 0.15 150 --55 to +150 Unit V V A A W °C °C
Package Dimensions
unit : mm 7027-004
1.6 0.8
Switching Time Test Circuit
VIN 0V --4V VDD= --15V
0.4
0.2
0.4
0.3
VIN PW=10µs D.C.≤1% G D
ID= --120mA RL=125Ω VOUT
元器件交易网
Ordering number : ENA0010
3LP03S
P-Channel Silicon MOSFET
3LP03S
Features
• • • •
General-Purpose Switching Device Applications
Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. High ESD Voltage (TYP 300V) [Built-in one side diode for protection between Gate-to-Source].
RDS(on) -- Ta
Ta=25°C
Static Drain-to-Source On-State Resistance, RDS(on) -- Ω
4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 --1
ID= --120mA
Static Drain-to-Source On-State Resistance, RDS(on) -- Ω
Ciss, Coss, Crss -- VDS
Switching Time, SW Time -- ns
2
50
td (off) tf
10
40
Ciss
td(on)
7 5