IPTC 15351_noguchi
Fujitsu STYLISTIC Q7311 商品说明书

Data SheetFujitsu STYLISTIC Q7311Tablet Mobility Meets Notebook ProductivityThe FUJITSU Tablet STYLISTIC Q7311 is a highly durable and secure 2-in-1 detachable that meets the demands of today’s mobile professionals. Its 33.8 cm (13.3-inch) FHD anti-glare display comes with pen and touch support. The latest 11th generation Intel® Core™ i7 vPro® processor technology and Intel® Thunderbolt™ 4 ensure excellent performance, even when you’re on the go.Combined tablet mobility and notebook productivity in one device - whereever you areThe robust IP42 compliant housing with reinforced corners and port caps protects your device from damages, even outside the office.Highly durable IP42 compliant housing with reinforced cornersPort caps that protect the interfaces like the new Intel® Thunderbolt™ 4 from water spills Optional backlit keyboard dock with LAN and charging port Optional TPU cover for more robustness Always connected and instantly readyConvenience at workSign documents legally secure. The pen is automatically charged within seconds when stored in its pen garage, that protects it also from being lost. Ready whenever you need it. 33.8 cm (13.3-inch) Full HD anti-glare touch display Supporting pen with 4K pressure levelsPen garage with inductive charging functionLean, agile and secureMore freedom to work safely from anywhere at anytime without compromises in security and data protection – integrated IR Cam with Windows Hello support, fingerprint sensor and Smartcard reader protect your device like a mansion.Weight starting at 800 grams, the device offers you ultimate portability Fingerprint sensor & IR Camera supporting Windows Hello Smartcard readerKensington lock supportUp to 10 hours battery runtimeIntel® Iris® Xe GraphicsComponentsBase unit STYLISTIC Q7311Operating systemsOperating system pre-installed Windows 11 Pro. Fujitsu recommends Windows 11 Pro for business.Windows 11 HomeWindows 10 Pro. Fujitsu recommends Windows 11 Pro for business.Operating system compatible FREE Upgrade to Windows 11**Upgrade timing may vary by device. Features and app availability may vary by region. Certain features requirespecific hardware (see aka.ms/windows11-spec).Operating system notes Internet connectivityWindows 10 Support: After the end of the product life Fujitsu will continue to test and support all upcoming Window10 releases for a period of maximum 5 years – depending on the available extension of hardware services throughFujitsu Warranty top ups. For details please see “Fujitsu Service Statement for Windows 10 Semi-Annual-ChannelSupport” at .Processor Intel® Core™ i7-1185G7 processor (4 Cores / 8 Threads)Intel® Core™ i5-1145G7 processor (4 Cores / 8 Threads)Intel® Core™ i5-1135G7 processor (4 Cores / 8 Threads) ** Processor only for retail, SMB, education and governmentHard disk drives (internal)SSD PCIe, SSD 512GB Value PCIe G3 M.2 FDE, SEDSSD PCIe, SSD 512GB MS PCIe G3 M.2 FDE, SEDSSD PCIe, SSD 256GB Value PCIe G3 M.2 FDE, SEDSSD PCIe, SSD 1TB Value PCIe G3 M.2 FDE, SEDSSD PCIe, SSD 1TB MS PCIe G3 M.2 FDE, SEDHard disk notes One Gigabyte equals one billion bytes, when referring to hard disk drive capacity.Accessible capacity may vary, also depending on used software.Up to 20 GB of HDD space is reserved for system recoveryInterface add on cards/components(optional)4G/ LTE (optional)(Downlink speed up to 300 Mbit/s, Uplink speed up to 150 Mbit/s)Display33.8 cm (13.3-inch), IPS, FHD, 1,920 x 1,080 pixel, Anti-glare touchscreen, 400 cd/m², 1500:1MultimediaCamera Front: HD Cam (0.9MP) with LEDFront: IR Cam (0.9MP) supporting Windows Hello with LEDRear: 5M with LEDBase unitBase unit STYLISTIC Q7311General system informationChipset Integrated in CPUSupported capacity RAM (min.)8 GBSupported capacity RAM (max.)16 GBMemory notes8 GB onboard or 16 GB onboardDual channel supportLPDDR4x (4,266 MHz)LAN notes Virtual MAC address. LAN connector via optional keyboard docking, cradle or optional USB to LAN adapter. Integrated WLAN Intel WiFi 6 AX201 - WLAN, BT, SRD cat. 1General system informationBIOS version UEFI Specification 2.7BIOS features InsydeH2O BIOSAudio type On boardAudio codec Realtek ALC255Audio features2x digital array microphones, 2x built-in speakers (stereo)Waterproof / Spillproof IP42Disinfectable noMIL-STD tested Yes, selected MIL-STD-810H tests passed.MIL-STD-810H test results are not a guarantee of future performance under identified test conditions.Accidental damage is not covered under standard international limited warranty.DisplayDiagonal Size33.8 cm (13.3-inch)Display Technology IPSDisplay type Anti-glare touchscreenDisplay Resolution type FHDBrightness - typical400 cd/m²Contrast - typical1500:1Viewing angle (h/v) - typical178°/178°Display notes Wide-view high-bright LED display (for enhanced outdoor viewing)Integrated ambient light sensor for automatic backlight adjustment to the working environment.Toughened glassSensors Ambient Light SensorCompassGyroscopeProximityDigitizer / Touch Technology Wacom Digitizer for pen (AES) input plus capacitive 10 finger multi-touch screenPen AES4k pressure levelPen garageinductive chargingAmbient light sensor IntegratedAmbient light sensor notes While enabled, the ambient light sensor automatically adjusts the display backlightGraphicsBase unit STYLISTIC Q7311TFT resolution (HDMI)up to 4,096 x 2,160 @ 60 HzGraphics brand name Intel® Iris® Xe Graphics (with Dual channel memory)Graphics features 4 Display Support (3 external, 1 internal)HDCP supportDirectX® 12OpenGL® 4.5Graphics notes Shared memory depending on main memory size and operating system3D acceleratorInterfacesDC-in1Audio: line-out / headphone 1 (combo port with Audio line-in)Audio: line-in / microphone 1 (combo port with Audio line-out)Internal microphones2x digital array microphonesUSB 2.0 total1USB 3.2 Gen1 (5 Gbps) total 1 x Type-AUSB 4.0 Gen3 (20 Gbps) total 1 x Type-C Intel® Thunderbolt™ 4 (with Power Delivery functionality)USB Type-C 1 USB 4 Gen3 Thunderbolt™4, Power Delivery (15W)HDMI 1 v1.4Ethernet (RJ-45)-Memory card slots 1 (USH-I) SD 3.0 StandardSD/microSD card: 2GBSDHC/microSDHC card: 32GBSDXC/microSDXC card: 2TBSmartCard slot optionalSIM card slot 1 (Nano-SIM, only for models with integrated 4G/LTE module)Interface Module notes LAN and VGA available via conversion cable.Docking connector for Port Replicator 1 (Cradle)Kensington Lock support1Port Replicator interfaces (optional)USB Type-C PR CradleDC-in 1 (19V/90W required) 1 (19V)Power on switch1---Audio: line-in---1Audio: line-in / line-out1---Audio: line-out---1Audio: comments Combo jack for headset usage---USB 3.2 Gen1 (5 Gbps) total---3DisplayPort1x V1.2 1VGA1x1HDMI text1x------Interface Notes3x Type-A - 5V/0.9A, 4.5W1x Type-C - 15W1x Type-C - Up to 60 W (PD v2.0-1.1) power output toclient or 4.5W inputKensington Lock support no1Ethernet (RJ-45)1 1 (10/100/1000)---Notes Number of simultaneous used displays and its possibleresolutions and frequencies depend on mobile systemand display interface type.Please consult always also the manual of the connectedclient.Wireless technologiesAntennas2x dual band for WLAN, 2x for LTE, Bluetooth shared with WLANBluetooth V5.1Integrated WLAN Intel WiFi 6 AX201 - WLAN, BT, SRD cat. 1WLAN encryption WPA/WPA2/WPA3 (Wi-Fi Protected Access)WLAN notes Import and usage according to country-specific regulations.Integrated WWAN LTE Sierra Wireless EM7421 (Cat.7) - UMTS, LTEWWAN notes Including GPS functionalityImport and usage according to country-specific regulations.LTE Connection Manager (if configured with 4G/LTE)GPS Embedded in 4G module if configured with WWANPower supplyAC adapter19 V / 65 W (3.42 A)20 V / 65 W (3.25 A) Type CNotes65W AC Adapter for usage with system/ min. 90W AC Adapter for usage with Cradle Rated voltage range100 V - 240 V (AC Input)Rated frequency range50 Hz - 60 Hz1st battery Li-Ion battery 3-cell, 38 WhBattery features Quick Charge: 80% in 1hRuntime 1st battery10 hBattery notes Battery runtime information is based on worldwide acknowledged BAPCo® MobileMark® 2018. Refer to www.bapco.com for additional details.The BAPCo® MobileMark® Benchmark provides results that enable direct product comparisons betweenmanufacturers. It does not guarantee any specific battery runtime which actually can be lower and may varydepending on product model, configuration, application and power management settings. The battery capacitydecreases slightly with every re-charge and over its lifetime.Dimensions / Weight / EnvironmentalDimensions (W x D x H)315 x 200.9 x 10.5 mm12.4 x 0.79 x 0.42 inchWeight from 0.800 kg slate only, weight of keyboard docking from 0.465 kgWeight (lbs)from 1.75 lbs slate only, weight of keyboard docking from 1.25 lbsWeight notes Weight may vary depending on actual configurationOperating ambient temperature 5 - 35 °C (41 - 95 °F); Packed -10 - 60 °C (14 - 140 °F)Operating relative humidity Running: 20 - 80% (relative humidity); Packed: 20 - 80% (relative humidity)Product STYLISTIC Q7311Germany GSEurope CECBGlobal TCO Certified 8.0EPEAT® Silver (dedicated regions), depending on configurationMicrosoft Operating Systems (HCT / HCL entry / WHQL)MIL-STD-810H testedRoHS (Restriction of hazardous substances)WEEE (Waste electrical and electronic equipment)Russia EACChina CCCCompliance link https:///sites/certificatesAdditional SoftwareAdditional software (preinstalled)Adobe® Reader® (pdf reader)CyberLink YouCam (webcam software)Fujitsu Display ManagerFujitsu DeskUpdate (driver and utility tool)ShockSensor UtilityPower Saving UtilityFujitsu Plugfree Network (network management utility)EasyGuide online user documentationMicrosoft Office (1 month trial for new Microsoft® Office 365 customers. Buy Microsoft Office.)Additional software (optional)Recovery DVD for Windows®Drivers & Utilities DVD (DUDVD) optionalCyberLink PowerDVD BD (playback software for Blu-ray Disc™)CyberLink PowerDVD DVD (playback software for DVD)CyberLink YouCam (webcam software)Nero (backup and burning software)ManageabilitySecurityPhysical Security Kensington Lock supportSystem and BIOS Security Absolute Persistence® technology capable BIOSEraseDiskTrusted Platform Module (TPM 2.0)User Security Hard disk passwordUser and supervisor BIOS passwordEmbedded fingerprint sensor (optional)Smartcard reader (optional)SystemLock BIOS SmartCard securityAuthConductor Client Basic (secure authentication solution)Packaging informationWarranty Warranty period2 years (for countries within EMEIA)Warranty type Bring-in Service / Collect & Return Service (depending on country)Product Support - the perfect extension Recommended Service 9x5, Onsite Response Time: Next Business DaySpare Parts availabilityat least 5 years after shipment, for details see https:///Recommended AccessoriesThunderbolt™ 4 Port ReplicatorFirst Thunderbolt™ Port Replicator on the market providing enhancedsecurity and full support of Intel® AMT (vPro®).The universal port can easily connect almost everything with a single cable and high speed-data transfer. This smart workspace solution keeps your desk clean and tidy.Order Code: FPCPR401BPUSB Type-C Port Replicator 2Connect to your peripherals. Adapt to the task on demand. The universal USB Type-C interface supports you to get your peripheral devicesconnected easily. Multiply your USB ports to connect your peripherals as well as your external display via HDMI, DisplayPort or VGA.You also can charge your external USB devices without the need of any additional charger.Order Code:S26391-F3327-L100STYLISTIC Q7311, Q7310 andSTYLISTIC Q5010 Family Cradle Flexibility, expandability, desktop replacement, investment protection – to name just a few benefits of Fujitsu’s docking options.Order Code: S26391-F3397-L100USB Type-C AC AdapterRecharge your notebook or tablet at work, at home or on the road with this USB Type-C power source easily. Order Code: S26391-F3326-L502LAN Conversion Cable (USB toLAN) for STYLISTIC Q The FUJITSU USB Type-A to LAN Conversion Cable enables you to connect your compatible STYLISTIC Tablet to a wired network connection. GBit-LAN via USB conversion cable is limited to 480 Mbit/s due to USB 2.0specification. (Picture similar to product)Order Code:S26391-F3398-L840Tablet Stand for STYLISTIC QdevicesThe tablet stand is designed for STYLISTIC devices like latest STYLISTIC Q7312 and can be used universally. Fits for STYLISTIC Q5 and Q7 and the Type-C as well as the Thunderbolt ™ 4 port replicator can be fixed on the stand.Order Code: FPCSK769BPAES PenTake your creativity to the next level, with the most natural pen experience with the AES Pen with replacement stylus tips. With pen nibs that are very thin, you can experience the writing and signing behavior of an ink pen. The pen fits in the device’s integrated pen garage.Order Code:S26391-F3389-L500Car Adapter USB-C-QCOne Car Adapter fits all.Independent of your mobile device charging method this car adapter will fulfill all major requirements and standards for fast charging vendorbrand-independent notebooks and all mobile devices. The Car Adapter USB-C-QC supports USB PD with PPS, Quick Charge (QC), Apple- and Samsung charge.Order Code: S26391-F2613-L630CANVAS HANSEN 14The PLEVIER CANVAS HANSEN 14 leather and canvas case is a compact and classic carrier for on the go. Available for notebooks up to 14 inches with two compartments and two accessory sections, protection for your device ensured. A subtle design canvas and nappa leather shade.Order Code:S26391-F1193-L67Bumper Case KitThe protective bump case kit is designed to prevent damages to yourSTYLISTIC Q7. Openings of the cover allow you to access all ports andbuttons whilest the hand strap on the back of the case gives you a firm grip while working with your tablet outside the office. The integrated stand solution enhances your productivity.Order Code: S26391-F3396-L200Folio Cover STYLISTIC Q7311/Q7310The Folio Cover for the STYLISTIC Q7311 and Q7310 is a thin, tailored protective sleeve for your Fujitsu tablet. It keeps the device safe from damage on the go, and brings a touch of style to your daily work. It can even be used as a stand if you need to display a presentation or watch a clip and fits even the device is connected to its keyboard dock.Inclination stand style 120 to 150 degreeOrder Code:S26391-F3509-L100Wireless Mouse WI860 BTCThe Wireless Mouse WI860 BTC can be paired with up to 3 different clients, 2x Bluetooth and 1x wireless USB Type-C dongle.With the blue optical sensor, it works on nearly all surfaces with an 3-step adjustable DPI selector (800/1600/2400).The mouse charges wirelessly through Qi or by USB Type-C cable.A utility button on the side is programmable. The default functions are optimized for Teams calls.Order Code:S26381-K474-L100Order Code: FPCKG453BPContactAddress: x-xx-x, street, city, state, ZIP code, country Phone: xx-xxxx-xxxx Fax : xx-xxxx-xxxxEmail:********************.com Website: /[country]2023-08-02 CE-ENdelivery subject to availability. Any liability that the data and illustrations are complete, actual or correct is excluded. Designations may be trademarks and/or copyrights of the respective manufacturer, the use of which by third parties for their own purposes may infringe the rights of such ownerMore informationAll rights reserved, including intellectual property rights. Changes to technical data reserved. Delivery subject to availability. Any liability that the data and illustrations are complete, actual or correct is excluded.Designations may be trademarks and/or copyrights of the respective manufacturer, the use of which by third parties for their own purposes may infringe the rights of such owner.For further information see /terms_of_use.html Copyright © Fujitsu Technology Solutions。
IPTG

IPTGIPTG中文品名: 异丙基-β-D-硫代吡喃半乳糖苷商品名称: Isopropyl β-D-1-Thiogalactopyranoside 英文简称: IPTG 产品别名: Isopropyl β-D-Thiogalactoside通用CAS : 367-93-1 产品纯度: Sigma ≥99%, Merck ≥98% ,INALCO≥99% 产品性状: 白色或白色粉末,溶于水后呈清亮无色液体分子式: C9H18O5S 分子量: 238.30 保存温度: 2-8°C冷藏保存,配制好后保存于-20°C,室温可放置一个月主要作用:异丙基硫代半乳糖苷(IPTG)是一种作用极强的诱导剂,不被细菌代谢而十分稳定,因此被实验室广泛应用。
IPTG是β–半乳糖苷酶的活性诱导物质。
基于这个特性,当pUC系列的载体DNA(或其他带有lacZ基因载体DNA)以lacZ缺失细胞为宿主进行转化时、或用M13噬菌体的载体DNA进行转染时,如果在平板培养基中加入X –gal和IPTG,由于β–半乳糖苷酶的α–互补性,可以根据是否呈现白色菌落(或噬菌斑)而方便地挑选出基因重组体。
此外,它还可以作为具有lac或tac等启动子的表达载体的表达诱导物使用。
编辑本段诱导原理首先E.coli的乳糖操纵子(元)含Z、Y及A三个结构基因,分别编码半乳糖苷酶、透酶和乙酰基转移酶,此外还有一个操纵序列O、一个启动序列P及一个调节基因I。
I基因编码一种阻遏蛋白,后者与O序列结合,使操纵子(元)受阻遏而处于关闭状态。
在启动序列P上游还有一个分解(代谢)物基因激活蛋白(CAP)结合位点。
由P序列、O序列和CAP结合位点共同构成lac操纵子的调控区,三个酶的编码基因即由同一调控区调节,实现基因产物的协调表达。
其次在没有乳糖存在时,lac操纵子(元)处于阻遏状态。
此时,I序列在PI启动序列操纵下表达的Lac阻遏蛋白与O序列结合,阻碍RNA聚合酶与P序列结合,抑制转录起动。
NCP551SN27T1G、NCP551SN28T1G和NCV551SN36T1G:电路板组件工业有

NCP551SN27T1G NCP551SN28T1G NCV551SN36T1GNCP551, NCV551Voltage Regulator - CMOS,Low Iq, Low-Dropout150 mAThe NCP551 series of fixed output low dropout linear regulators are designed for handheld communication equipment and portable battery powered applications which require low quiescent. The NCP551series features an ultra −low quiescent current of 4.0 m A. Each device contains a voltage reference unit, an error amplifier, a PMOS power transistor, resistors for setting output voltage, current limit, and temperature limit protection circuits.The NCP551 has been designed to be used with low cost ceramic capacitors and requires a minimum output capacitor of 0.1 m F. The device is housed in the TSOP −5 surface mount package. Standard voltage versions are 1.4, 1.5, 1.8, 2.5, 2.7, 2.8, 2.9, 3.0, 3.1, 3.2, 3.3,3.6, 3.8 and 5.0 V . Other voltages are available in 100 mV steps.Features•Low Quiescent Current of 4.0 m A Typical •Maximum Operating V oltage of 12 V •Low Output V oltage Option•High Accuracy Output V oltage of 2.0%•Industrial Temperature Range of −40°C to 85°C (NCV551, T A = −40°C to +125°C)•NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC −Q100Qualified and PPAP Capable•These Devices are Pb −Free and are RoHS CompliantTypical Applications•Battery Powered Instruments •Hand −Held Instruments •Camcorders and CamerasFigure 1. Representative Block DiagramV inV outEnable OFFON See detailed ordering and shipping information in the package dimensions section on page 11 of this data sheet.ORDERING INFORMATIONTSOP −5(SOT23−5, SC59−5)SN SUFFIX CASE 483PIN CONNECTIONS AND MARKING DIAGRAM13N/CVin 2GND Enable4V out5(Top View)xxxAYW G G xxx = Specific Device Code A = Assembly Location Y = YearW = Work Week G = Pb −Free Package(Note: Microdot may be in either location)PIN FUNCTION DESCRIPTIONPin No.Pin Name Description1V in Positive power supply input voltage.2GND Power supply ground.3Enable This input is used to place the device into low−power standby. When this input is pulled low, thedevice is disabled. If this function is not used, Enable should be connected to V in.4N/C No Internal Connection.5V out Regulated output voltage.MAXIMUM RATINGSRating Symbol Value Unit Input Voltage V in0 to 12V Enable Voltage V EN−0.3 to V in+0.3V Output Voltage V out−0.3 to V in+0.3V Power Dissipation P D Internally Limited W Operating Junction Temperature T J+150°COperating Ambient Temperature NCP551NCV551T A−40 to +85−40 to +125°CStorage Temperature T stg−55 to +150°C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionalityshould not be assumed, damage may occur and reliability may be affected.1.This device series contains ESD protection and exceeds the following tests:Human Body Model 2000 V per MIL−STD−883, Method 3015Machine Model Method 200 VCharge Device Model (CDM) tested C3B per EIA/JESD22−C101.tchup capability (85°C) "100 mA DC with trigger voltage.THERMAL CHARACTERISTICSRating Symbol Test Conditions Typical Value Unit Junction−to−Ambient R q JA 1 oz Copper Thickness, 100 mm2250°C/W PSIJ−Lead 2Y J−L2 1 oz Copper Thickness, 100 mm268°C/W NOTE:Single component mounted on an 80 x 80 x 1.5 mm FR4 PCB with stated copper head spreading area. Using the following boundary conditions as stated in EIA/JESD 51−1, 2, 3, 7, 12.ELECTRICAL CHARACTERISTICS(V in = V out(nom.) + 1.0 V, V EN = V in, C in = 1.0 m F, C out = 1.0 m F, T A = 25°C, unless otherwise noted.)Characteristic Symbol Min Typ Max UnitOutput Voltage (T A = 25°C, I out = 10 mA) 1.4 V1.5 V1.8 V2.5 V2.7 V2.8 V2.9 V3.0 V3.1 V3.2 V3.3 V3.6 V3.8 V5.0 V V out1.3581.4551.7462.4252.6462.7442.8422.9403.0383.1363.2343.5283.7244.901.41.51.82.52.72.82.93.03.13.23.33.63.85.01.4421.5451.8542.5752.7542.8562.9583.0603.1623.2643.3663.6723.8765.10VOutput Voltage (T A = T low to T high, I out = 10 mA) 1.4 V1.5 V1.8 V2.5 V2.7 V2.8 V2.9 V3.0 V3.1 V3.2 V3.3 V3.6 V3.8 V5.0 V V out1.3441.4401.7282.4002.6192.7162.8132.9103.0073.1043.2013.4923.6864.8501.41.51.82.52.72.82.93.03.13.23.33.63.85.01.4561.5601.8722.6002.7812.8842.9873.0903.1933.2963.3993.7083.9145.150VLine Regulation (V in = V out + 1.0 V to 12 V, I out = 10 mA)Reg line−1030mV Load Regulation (I out = 10 mA to 150 mA, V in = V out + 2.0 V)Reg load−4065mVOutput Current (V out = (V out at I out = 100 mA) −3%)1.4 V−2.0 V (V in = 4.0 V)2.1 V−3.0 V (V in = 5.0 V)3.1 V−4.0 V (V in = 6.0 V)4.1 V−5.0 V (V in = 8.0 V)I o(nom.)150150150150−−−−−−−−mADropout Voltage (I out = 10 mA, Measured at V out−3.0%)1.4 V1.5 V, 1.8 V,2.5 V2.7 V, 2.8 V, 2.9 V,3.0 V, 3.1 V, 3.2 V, 3.3 V, 3.6 V, 3.8 V, 5.0 V V in−V out−−−17013040250220150mVQuiescent Current(Enable Input = 0 V)(Enable Input = V in, I out = 1.0 mA to I o(nom.))1.4 V−2.0 V options, V in = 4.0 V2.1 V−3.0 V options, V in = 5.0 V3.1 V−4.0 V options, V in = 6.0 V4.1 V−5.0 V options, V in = 8.0 V I Q−−0.14.01.08.0m AOutput Voltage Temperature Coefficient T c−"100−ppm/°CEnable Input Threshold Voltage(Voltage Increasing, Output Turns On, Logic High) (Voltage Decreasing, Output Turns Off, Logic Low)V th(en)1.3−−−−0.3VELECTRICAL CHARACTERISTICS (continued)(V in = V out(nom.) + 1.0 V, V EN = V in , C in = 1.0 m F, C out = 1.0 m F, T A = 25°C, unless otherwise noted.)Output Short Circuit Current (V out = 0 V)1.4 V −2.0 V (V in = 4.0 V)2.1 V −3.0 V (V in = 5.0 V)3.1 V −4.0 V (V in = 6.0 V)4.1 V −5.0 V (V in = 8.0 V)I out(max)160160160160350350350350600600600600mA3.Maximum package power dissipation limits must be observed.PD +T J(max)*T A R q JA4.Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.5.NCP551T low = −40°CT high = +85°C NCV551T low = −40°CT high = +125°C.DEFINITIONSLoad RegulationThe change in output voltage for a change in output current at a constant temperature.Dropout VoltageThe input/output differential at which the regulator output no longer maintains regulation against further reductions in input voltage. Measured when the output drops 3% below its nominal. The junction temperature, load current, and minimum input supply requirements affect the dropout level. Maximum Power DissipationThe maximum total dissipation for which the regulator will operate within its specifications.Quiescent CurrentThe quiescent current is the current which flows through the ground when the LDO operates without a load on its output: internal IC operation, bias, etc. When the LDO becomes loaded, this term is called the Ground current. It is actually the difference between the input current (measured through the LDO input pin) and the output current.Line RegulationThe change in output voltage for a change in input voltage. The measurement is made under conditions of low dissipation or by using pulse technique such that the average chip temperature is not significantly affected.Line Transient ResponseTypical over and undershoot response when input voltage is excited with a given slope.Thermal ProtectionInternal thermal shutdown circuitry is provided to protect the integrated circuit in the event that the maximum junction temperature is exceeded. When activated at typically 160°C, the regulator turns off. This feature is provided to prevent failures from accidental overheating.Maximum Package Power DissipationThe maximum power package dissipation is the power dissipation level at which the junction temperature reaches its maximum operating value, i.e. 125°C. Depending on the ambient power dissipation and thus the maximum available output current.3.25G R O U N D C U R R E N T (m A )3.05Figure 2. Ground Pin Current versusOutput Current 3.35I out , OUTPUT CURRENT (mA)3.33.13.23.15Figure 3. Ground Pin Current versusOutput Current3.35G R O U N D C U R R E N T (m A )3.153.45I out , OUTPUT CURRENT (mA)3.43.23.33.250.50Figure4. Ground Pin Current versusInput Voltage V in , INPUT VOLTAGE (VOLTS)Figure 5. Ground Pin Current versusInput VoltageG R OU N D P I N C U R R E N T (m A )11.522.533.540.50V in , INPUT VOLTAGE (VOLTS)G R OU N D P I N C U R R E N T (m A )11.522.533.5440004−200200−60064200TIME (m s)Figure 6. Line Transient Response Figure 7. Line Transient Response8TIME (m s)−20004006−400−400O U T P U T V O L T A G E D E V I A T I O N (m V )V i n , I N P U T V O L T A G E (V )O U T P U T V O L T A G E D E V I A T I O N (m V )V i n , I N P U T V O L T A G E (V )4−−4200TIME (m s)Figure 8. Line Transient Response Figure 9. Line Transient ResponseTIME (m s)−20004006−−400O U T P U T V O L T A G E D E V I A T I O N (m V )V i n , I N P U T V O L T A G E (V )O U T P U T V O L T A G E D E V I A T I O N (m V )V i n , I N P U T V O L T A G E (V )−600−−4200Figure 10. Line Transient Response Figure 11. Line Transient ResponseTIME (m s)−20004006−−400O U T P U T V O L T A G E D E V I A T I O N (m V )V i n , I N P U T V O L T A G E (V )O U T P U T V O L T A G E D E V I A T I O N (m V )V i n , I N P U T V O L T A G E (V )−600600800TIME (m s)150O U T P U T V O L T A G E D E V I A T I O N (m V )−1000TIME (ms)Figure 12. Load Transient Response ON Figure 13. Load Transient Response OFFTIME (ms)−50000I o u t , O U T P U T C U R R E N T (m A )−O U T P U T V O L T A G E D E V I A T I O N (m V )I o u t , O U T P U T C U R R E N T (m A )Figure 14. Load Transient Response OFF TIME (ms)Figure 15. Load Transient Response ONTIME (ms)150−5005000−−01000O U T P U T V O L T A G E D E V I A T I O N (m V )I o u t , O U T P U T C U R R E N T (m A )O U T P U T V O L T A G E D E V I A T I O N (m V )I o u t , O U T P U T C U R R E N T (m A )12Figure 16. Turn −On Response 3TIME (m s)0132V o u t , O U T P U T V O L T A G E (V )E N A B L E V O L T A G E (V )Figure 17. Turn−On ResponseTIME (m s)V o u t , O U T P U T V O L T A G E (V )E N A B L E V O L T A G E(V )Figure 18. Output Voltage versus Input Voltage Figure 19. Output Voltage versus Input Voltage2V o u t , O U T P U T V O L T A G E (V O L T S )3V in , INPUT VOLTAGE (VOLTS)2.50.51.51V o u t , O U T P U T V O L T A G E (V O L T S )V in , INPUT VOLTAGE (VOLTS)APPLICATIONS INFORMATIONA typical application circuit for the NCP551 series is shown in Figure 20.Input Decoupling (C1)A 0.1 m F capacitor either ceramic or tantalum is recommended and should be connected close to the NCP551package. Higher values and lower ESR will improve the overall line transient response.Output Decoupling (C2)The NCP551 is a stable Regulator and does not require any specific Equivalent Series Resistance (ESR) or a minimum output current. Capacitors exhibiting ESRs ranging from a few m W up to 3.0 W can thus safely be used.The minimum decoupling value is 0.1 m F and can be augmented to fulfill stringent load transient requirements.The regulator accepts ceramic chip capacitors as well as tantalum devices. Larger values improve noise rejection and load regulation transient response.Enable OperationThe enable pin will turn on or off the regulator. These limits of threshold are covered in the electrical specification section of this data sheet. If the enable is not used then the pin should be connected to V in .HintsPlease be sure the V in and GND lines are sufficiently wide.When the impedance of these lines is high, there is a chance to pick up noise or cause the regulator to malfunction.Set external components, especially the output capacitor,as close as possible to the circuit, and make leads as short as possible.ThermalAs power across the NCP551 increases, it might become necessary to provide some thermal relief. The maximum power dissipation supported by the device is dependent upon board design and layout. Mounting pad configuration on the PCB, the board material, and also the ambient temperature effect the rate of temperature rise for the part.This is stating that when the NCP551 has good thermal conductivity through the PCB, the junction temperature will be relatively low with high power dissipation applications.The maximum dissipation the package can handle is given by:PD +T J(max)*T AR q JAIf junction temperature is not allowed above the maximum 125°C, then the NCP551 can dissipate up to 400 mW @ 25°C.The power dissipated by the NCP551 can be calculated from the following equation:P tot +ƪV in *I gnd (I out )ƫ)[V in *V out ]*I outorV inMAX +P tot)V out *I outI GND )I outIf a 150 mA output current is needed then the ground current from the data sheet is 4.0 m A. For an NCP551SN30T1 (3.0 V), the maximum input voltage will then be 5.6 V .Battery or Unregulated VoltageFigure 20. Typical Application CircuitOFFONm FFigure 21. Current Boost RegulatorFigure 22. Current Boost Regulator withShort Circuit LimitFigure 23. Delayed Turn −onFigure 24. Input Voltages Greater than 12 VThe NCP551 series can be current boosted with a PNP transist-or. Resistor R in conjunction with V BE of the PNP determines when the pass transistor begins conducting; this circuit is not short circuit proof. Input/Output differential voltage minimum is increased by V BE of the pass resistor.Short circuit current limit is essentially set by the V BE of Q2 and R1. I SC = ((V BEQ2 − ib * R2) / R1) + I O(max) RegulatorIf a delayed turn −on is needed during power up of several volt-ages then the above schematic can be used. Resistor R, and capacitor C, will delay the turn −on of the bottom regulator.A regulated output can be achieved with input voltages that exceed the 12 V maximum rating of the NCP551 series with the addition of a simple pre −regulator circuit. Care must be taken to prevent Q1 from overheating when the regulated output (V out ) is shorted to GND .ORDERING INFORMATIONDeviceNominalOutput Voltage Marking Package Shipping†NCP551SN15T1G 1.5LAO TSOP−5(Pb−Free)3000 / Tape & Reel NCP551SN18T1G 1.8LAP TSOP−5(Pb−Free)3000 / Tape & Reel NCP551SN25T1G 2.5LAQ TSOP−5(Pb−Free)3000 / Tape & Reel NCP551SN27T1G 2.7LAR TSOP−5(Pb−Free)3000 / Tape & Reel NCP551SN28T1G 2.8LAS TSOP−5(Pb−Free)3000 / Tape & ReelNCP551SN29T1G 2.9LJL TSOP−5(Pb−Free)3000 / Tape & ReelNCP551SN30T1G 3.0LAT TSOP−5(Pb−Free)3000 / Tape & ReelNCP551SN31T1G 3.1LJM TSOP−5(Pb−Free)3000 / Tape & ReelNCP551SN32T1G 3.2LIV TSOP−5(Pb−Free)3000 / Tape & ReelNCP551SN33T1G 3.3LAU TSOP−5(Pb−Free)3000 / Tape & ReelNCP551SN50T1G 5.0LAV TSOP−5(Pb−Free)3000 / Tape & ReelNCV551SN14T1G* 1.4AAT TSOP−5(Pb−Free)3000 / Tape & ReelNCV551SN15T1G* 1.5LFZ TSOP−5(Pb−Free)3000 / Tape & ReelNCV551SN18T1G* 1.8LGA TSOP−5(Pb−Free)3000 / Tape & ReelNCV551SN25T1G* 2.5LGB TSOP−5(Pb−Free)3000 / Tape & ReelNCV551SN27T1G* 2.7LGC TSOP−5(Pb−Free)3000 / Tape & ReelNCV551SN28T1G* 2.8LGD TSOP−5(Pb−Free)3000 / Tape & ReelNCV551SN30T1G* 3.0LGE TSOP−5(Pb−Free)3000 / Tape & ReelNCV551SN31T1G* 3.1LJR TSOP−5(Pb−Free)3000 / Tape & ReelNCV551SN32T1G* 3.2LFR TSOP−5(Pb−Free)3000 / Tape & ReelNCV551SN33T1G* 3.3LGG TSOP−5(Pb−Free)3000 / Tape & ReelNCV551SN36T1G* 3.6AEJ TSOP−5(Pb−Free)3000 / Tape & ReelNCV551SN38T1G* 3.8AD5TSOP−5(Pb−Free)3000 / Tape & ReelNCV551SN50T1G* 5.0LGF TSOP−5(Pb−Free)3000 / Tape & ReelNOTE:Additional voltages in 100 mV steps are available upon request by contacting your ON Semiconductor representative.†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our T ape and Reel Packaging Specific-ations Brochure, BRD8011/D.*NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable.PACKAGE DIMENSIONSTSOP −5SN SUFFIX CASE 483−02ISSUE KNOTES:1.DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.2.CONTROLLING DIMENSION: MILLIMETERS.3.MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.4.DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLDFLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. DIMENSION A.5.OPTIONAL CONSTRUCTION: AN ADDITIONAL TRIMMED LEAD IS ALLOWED IN THIS LOCATION.TRIMMED LEAD NOT TO EXTEND MORE THAN 0.2FROM BODY .DIM MIN MAX MILLIMETERS A 3.00 BSC B 1.50 BSC C 0.90 1.10D 0.250.50G 0.95 BSC H 0.010.10J 0.100.26K 0.200.60M 0 10 S2.503.00__ǒmm inchesǓ*For additional information on our Pb −Free strategy and solderingdetails, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.SOLDERING FOOTPRINT*2XDETAIL ZTOP VIEWON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at /site/pdf/Patent −Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.PUBLICATION ORDERING INFORMATIONNCP551SN27T1G NCP551SN28T1G NCV551SN36T1G。
Philips SHB1400 蓝牙立体声耳机用户指南说明书

Micrófono AlmohadillaT apa USBPiloto LEDVOL -/VOL +Guía de inicio rápido Auriculares estéreo Bluetooth de Philips SHB1400Introducción1Extraiga la tapa USB.2Conecte el auricular a un puerto USB activo de un PC o a un adaptador dealimentación con salida USB.Coloque la almohadilla en eloído y gire el auricular haciaarriba o hacia abajo hasta que seajuste de forma segura.Para un ajuste aún más seguro,coloque el gancho para la oreja:presione la junta de rótula entre laalmohadilla y el auricular.Ajuste del auricular OpcionalEmparejamiento del auricular con el teléfono móvil1Asegúrese de que el auricular estácargado y apagado.2Asegúrese de que el teléfono móvilestá encendido y tiene la funciónBluetooth activada.3Pulse hasta que el piloto LEDempiece a parpadear en rojo y azulalternando ambos colores. No deje depulsar el botón cuando el piloto LEDse ilumine únicamente en azul.4Empareje el auricular con el teléfonomóvil. Para obtener más información,consulte el manual de usuario delteléfono móvil.Settings ConnectivitySelect BackEnter PasswordSettingsDevices FoundSelect BackPhilips SHB1400Settings ConnectivityBluetoothSelect BackAddBluetoothdeviceAlgunos teléfonos móvilesno necesitan el códigoPIN "0000"..Para obtener el manual de usuario completo, consulte /welcome .Uso del auricular * Disponible si es compatible con su teléfono móvil.Piloto LED e indicación de sonido© 2011 Koninklijke Philips Electronics N.V. All rights reserved.Trademarks are the property of Koninklijke Philips Electronics N.V. or their respective owners.V2.0 Welcome to Philips!For an optimal experience, register your product at /welcome。
N79E815_814_8132系列中文资料

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植物病害诊断试剂盒

植物病害诊断试剂盒美国阿格迪agdia 公司是全球最大的植物病害诊断试剂生产商,产品品种最多,可检测项目多达200多个。
包装规格最全,不同的包装规格适合不同规模的实验室。
从中您一定能发现适合您使用的产品。
选购试剂说明,请仔细阅读。
1,kit, 订货号PSAxxxxx/xxxx 或PSPxxxxx/xxxx 为完整的试剂盒包装,包括样品提取缓冲液、包被好抗体的微孔板(可拆分)、酶标记物、稀释液、缓冲液、底物发色剂、阳性质控(如果应该供应)。
特别注明Indirect ELISA 方法的kit 包括未包被的微孔板及联接用的抗体,所含有的其他组分同上。
2, Reagent Set, 订货号SRAxxxxx/xxxx ,XRAxxxxx/xxxx或SRPxxxxx/xxxx 只含有未包被的微孔板、包被需要的抗体或联接用的抗体、酶标记物。
其他试剂如样品提取缓冲液、稀释液、缓冲液、底物发色剂、质控物需另外订购或自己配制。
我公司销售原厂的上述试剂,详见目录。
3, Bacterial Reagent Set, 订货号BRAxxxxx/xxxx 只含有未包被的微孔板、包被需要的抗体或联接用的抗体、酶标记物。
其他试剂如样品提取缓冲液、稀释液、缓冲液、底物发色剂、质控物需另外订购或自己配制。
我公司销售原厂的上述试剂,详见目录。
4, Bacterial ID订货号BIDxxxxx/xxxx 为完整的试剂盒包装,包括样品提取缓冲液、包被好抗体的微孔板(可拆分)、酶标记物、稀释液、缓冲液、底物发色剂、质控(如果应该供应)。
用于鉴定培养基中或有病症植物提取液中的细菌。
操作简便快速。
5, PS A或SR A中的A代表碱性磷酸酶标记;PS P或SR P中的P代表过氧化物酶标记。
6, Immunostrip test, 为检试纸条,操作简单,几分钟内得到结果,非常适合于现场检测。
该试条必须与相应的样品提取缓冲液配套使用。
实验室需要单独购买该样品提取缓冲液,详见目录。
SHI Cryopump Product Catalogue说明书

Sumitomo Heavy Industries, Ltd. (SHI) has a tradition of excellence and innovation that spans over 400 years. From its very beginning as a small shop selling medicines and books in Kyoto, Japan in the early 17th century, to its current status as a diverse, $6 billion corporation, SHI has continued to grow and flourish in an ever-changing international market.SHI’s acquisition of IGC-APD Cryogenics, Inc. in 2002 brought together two of the world’s leading cryogenic companies to form the SHI Cryogenics Group, with an unsurpassed tradition of design, development and success in the manufac-ture of cryogenic equipment.SHI Cryopumps continue this tradition by supporting both global research & development as well as state-of-the-art technologies. Today, applications of cryogenic technologies can be found in our daily lives. SHI Cryopumps are used directly or in the manufacturing of many of the world’s semiconductor, telecommunications, electronics, vacuum-coat-ed, and custom laboratory equipment and products.SHI offers a wide range of Cryopump products. Marathon® CP Series Cryopumps are offered with stan-dard and low profile enclosures, several flange options and manual and automatic features. They can be serviced in-situ without breaking vacuum or removing the pump from the chamber.The SICERA® Cryopump uses SHI proprietary inverter technology to reduce customerenergy costs. The resulting savings and increased production efficiency makeSICERA® ideal for semiconductor-related manufacturing.SHI Cryopumps are built in world-class manufacturing facilities us-ing Six Sigma manufacturing processes and process capabilitiesand analysis. The result is a product portfolio that offersflexibility, high reliability and is supported by aglobal sales, service and supportnetwork.Cryopump ModelMarathon® CP SICERA®CP-8CP-8LP CP-250LP CP-12CP-16CP-20KZ-8L KZ-12LAir (liters/second)1,5001,8003,0003,6004,8009,7001,5003,300 Water (liters/second)4,2004,2006,3009,56017,30029,1004,0009,500 Argon (liters/second)1,2501,5002,5003,1004,1008,3001,2003,500 Hydrogen (liters/second)2,3003,0005,0007,30012,00014,0002,2005,500 Argon Throughput (torr liters/second)11.011.011.012.611.411.38.811.3 Argon Capacity (standard liters)1,2001,6001,6002,0005,5006,0001,0002,000 Hydrogen Capacity (standard liters)2523305050331235 Crossover Rating (torr-liters)220220300650500400150150Weight35 lbs.(16.8 kg)39.5 lbs.(17.9 kg)44 lbs.(20 kg)90 lbs.(41 kg)110 lbs.(50 kg)170 lbs.(77 kg)70.6 lbs.(32 kg)88.2 lbs.(40 kg)Zephyr®•••HC-4E1•••Masatomo Sumitomo, founder of the Sumitomo family, opens a shopdealing in medicines and books in Kyoto, Japan17th Century Discovery of Besshi Copper Mine—Sumitomo receives exclusivemining rights1690Precursor to Sumitomo Heavy Industries, Ltd. established as amachinery production and repair facility at the Besshi Mine Plant1888Establishment of Sumitomo Machinery Works, Ltd.19341959Precursor to APD Cryogenics established as Space and MissileDepartment of Air Products in Allentown, Pennsylvania, USASumitomo establishes its cryogenics business at the Hiratsuka Research Laboratory in Hiratsuka City, near Tokyo. 1962Renamed the Advanced Product Development Department of AirProducts1968Introduces Displex ® cryocooler systems Merger between Sumitomo Machinery and Uraga Heavy Industriesresults in the establishment of Sumitomo Heavy Industries, Ltd.19691976Pioneers current generation cryopump technologyMerger with Nittoku Metal Industries results in the establishment of the1982APPLICATIONSSHI’s Cryopump systems are specifically designed to meet the needs of high vacuum processes, and are used in the manufacture of a variety of products. Typical applications for cryopumps include:Performance Specifications Performance Specifications Available Configurations• ANSI 6”, ISO 200 or CF 10” FlangeOptions• Standard Manual Operation• Optional Fully-Automated Operationwith Marathon ® Cryopump Controller• Two (2) cryopumps operating with one(1) HC-8E4 or F-70L/H Compressor• Displex ® Technology Standard Scope of Supply • CP-8 Cryopump • Zephyr ®, HC-4E1, HC-8E4 or F-70L/H Compressor • 10’ Flexible Gas Lines • 10’ Cold Head Cable • Tool Kit Available Configurations• Standard Low Profile Design in Left orRight Hand Configurations• ANSI 6”, ISO 200 or CF 10” FlangeOptions• Standard Manual Operation• Optional Fully-Automated Operationwith Marathon ® Cryopump Controller• Two (2) cryopumps operating with one(1) HC-8E4 or F-70L/H Compressor• Displex ® Technology Standard Scope of Supply • CP-8LP Cryopump • Zephyr ®, HC-4E1, HC-8E4 or F-70L/H Compressor • 10’ Flexible Gas Lines • 10’ Cold Head CablePerformance Specifications Performance Specifications Available Configurations• Standard Low Profile Design in Left orRight Hand Configurations• ISO 250 Flange• Standard Manual Operation• Optional Fully-Automated Operationwith Marathon ® Cryopump Controller• Two (2) cryopumps operating with one(1) HC-8E4 or F-70L/H Compressor• Displex ® Technology Standard Scope of Supply • CP-250LP Cryopump • Zephyr ®, HC-4E1, HC-8E4 or F-70L/H Compressor • 10’ Flexible Gas Lines • 10’ Cold Head Cable • Tool Kit Available Configurations• ANSI 10”, ISO 320 or CF 14” FlangeOptions• Standard Manual Operation• Optional Fully-Automated Operationwith Marathon ® Cryopump Controller• Displex ® and Whisper ® Technology Standard Scope of Supply • CP-12 Cryopump • HC-8E4 or F-70L/H Compressor • 10’ Flexible Gas Lines • 10’ Cold Head Cable •Tool KitPerformance Specifications Performance Specifications Available Configurations• ISO 400, CVC 10” or Wire Seal FlangeOptions• Standard Manual Operation• Optional Fully-Automated Operationwith Marathon ® Cryopump Controller• Displex ® and Whisper ® Technology Standard Scope of Supply • CP-16 Cryopump • HC-8E4 or F-70L/H Compressor • 10’ Flexible Gas Lines • 10’ Cold Head Cable • Tool Kit Available Configurations• ISO 500, ANSI 20” or Wire SealFlange Options• Standard Manual Operation• Optional Fully-Automated Operationwith Marathon ® Cryopump Controller• Displex ® and Whisper ® Technology Standard Scope of Supply • CP-20 Cryopump • F-70L/H Compressor • 10’ Flexible Gas Lines • 10’ Cold Head Cable •Tool KitPerformance Specifications Performance Specifications Available Configurations• ICF 253 mm Flange• Standard Fully-Automated Operation• SHI Proprietary Inverter Technology Standard Scope of Supply • KZ-8L Cryopump • CSW-61C/D Compressor • Remote Cryopump Controller with RS-485 Cables • Flexible Gas Lines • Power Cables Available Configurations• ANSI 10” Flange• Standard Fully-Automated Operation• SHI Proprietary Inverter Technology Standard Scope of Supply • KZ-12L Cryopump • CSW-61C/D Compressor • Remote Cryopump Controller with RS-485 Cables • Flexible Gas Lines •Power CablesSHI offers a complete line of necessary interconnect-ing cables for our Marathon ® CP Cryopump Sys-tems. Standard, manual systems include cables that transmit the necessary power from our compressors to the cryopump cold head. Standard length is 10 feet (3 meters) with options to extend up to 66 feet (20 meters). For our fully automatic, MCC-driven systems, additional interconnecting cables are in-cluded to power the cold head, MCC, automatic valves, blanket heater and vacuum and temperature instrumentation. RS-232 cables connect between our optional MCC and the customer’s host computer, PLC or PC.The SI CERA ® Cryopump system includes power cables for the pumps, compressors and controller. In addition, RS-485 cables connect the con-troller to both the pumps and compressors. SI CERA™ system cablescome in a variety of lengths and can be customized to fit the customer’sprocess.SHI offers Temperature I ndicator Kits, de-signed to accurately display and/or com-municate critical cryopump temperatures forour Marathon ® CP Cryopumps. Model 1901Indicator is a single, Model 9302 is dual, andModel 9304 is a four channel temperature in-dicator. All have alarm set points, RS-232 interface and analogoutput (optional on Model 1901). Model 9302 and 9304 Indica-tors additionally have a standard Ethernet interface. Tempera-ture indicators provide the necessary excitation and accuratereadout for our standard temperature diodes and kits comecomplete with 50 foot interconnecting cable(s).The S CERA ® Remote Cryopump Control-ler enables fully automatic operation of SICERA ® Cryopumps using commands from the end user’s host computer and industrystandard cryopump protocol. The controller comes standard with all SICERA®Cryopump systems. An Operation Panel Unit (shown in picture) is available as an option to monitor the status of the cryopumps and compressors, as well as to modify the regen-eration sequence and to obtain key data from the cryopump system.SHI’s MCC enables fully automatic operation of Marathon ® CP Cryopumps. Industry standard cryopump protocol is delivered via RS-232 interface from the customer’s host computer, PLC or Windows-based PC (using optional SHI MCS Software). Automatic operation and regeneration, as well as monitoring of critical system functions, are enabled, resulting in im-proved process times, enhanced efficiency of the user’s process and greatly reduced down-time between production cycles. I n conjunc-tion with the MCC, Marathon ® CP Cryopumps are enhanced with all necessary automatic valves, vacuum and temperature instrumen-tation and blanket heaters to enable safe andefficient automatic operation and regeneration.Tool Kits & Replacement Parts KitsCables Flexible & Superflex Gas LinesMarathon ® Cryopump Controller (MCC)SICERA ® Remote Cryopump Controller Temperature IndicatorsSICERA ® Cryopumps come equipped with flex-ible helium gas lines in 82 feet (25 meter) lengths,while Marathon ® CP Cryopumps come standardwith flexible helium gas lines in lengths from 10feet (3 meters) to 66 feet (20 meters). Gas linesterminate in size 8 female coupling halves forquick connect and disconnect to/from the coldhead and compressor and are also available withone end at 90°.Optional Superflex lines offer superior flexibilityand smaller bend radius without thinning the wall of the hose and of-fer a higher flexing cycle life than standard lines. Superflex lines alsodampen vibration and noise of the helium gas traveling through thelines. All flexible gas lines are pre-charged with clean helium gas.SHI offers a complete line of replacementparts kits that include all of the required partsand assemblies to completely reconditionMarathon ® CP Cryopumps and compres-sors.Tool kits are available from the standardwrench kit (used for connecting couplings)that accompanies new Marathon CP ® sys-tems to more comprehensive kits that in-clude such items as gas charging valves andadditional tools required for performing yourown service on Marathon ® CP Cryopumps and compressors.Contact your local SHI office for details.GLOBAL SERVICE & SUPPORT PROGRAMSAt SHI Cryogenics Group, we realize that our customers are diverse and the markets they serve are demanding and unique. In response, our global service and support network offers responsive and value-added support for our complete range of products. Our factory-trained technicians are located in strategic service centers around the globe and offer 24/7 on-call support, with no machines and no waiting.Our cryopump service offerings are both flexible and cost effective, including:• Product return to regional service depot for service, repair or complete refurbishment• Technical assistance in diagnosing equipment issues via phone or e-mail• Product exchange programs• Customer training programs• Customized service contractsAdditionally, Marathon® CP Cryopumps, can be serviced on-site, in-situ by the cus-tomer or a SHI factory-trained technician, without breaking vacuum or remov-ing the cryopump from the chamber for return or replacement. This uniqueservice option is the result of the high-quality, ultra-reliable Displex®Cryocooler technology found in all Marathon® CP Cryopumps.Displex® Cryocoolers have a long and successful operatinghistory, and feature a pneumatic drive that optimiz-es performance, reliability and main-tainability.Performing in-situ service lowers the total cost of ownership by:• Minimizing the required capital investment in spare parts• Minimizing the “down time” of your system for service or repair• Eliminating the cost of shipping a complete cryopump to a service center• Eliminating labor costs associated with complete disassembly of the cryopump from your systemSICERA® Cryopumps can be returned to one of SHI’s service centers for routine maintenance, service or complete refurbishment. Additional SICERA® pumps and compressors are available as “exchange units.” Simply install the exchange unit and the returned unit will be refurbished and placed “on the shelf” ready for the next exchange.Additionally, our factory-trained service technicians are available for on-site training, scheduled maintenance or emergency visits, offering rapid-response service for mission-critical applications.Whether you have service performed by a qualified service technician, perform in-situ service yourself with readily-ADDITIONAL PRODUCTS FROM SHI CRYOGENICS GROUP In addition to the cryopumps featured in this catalogue, SHI Cryogenics Group designs and manufactures4K and 10K G-M Cryocoolers, Pulse Tubes and other low temperature cooling technology.SHI Cryogenics Group’s 10K Gifford-McMahon Cryocoolers are versatile, orientation-free, closed-cycle systems that feature the same Displex® technology found in the complete line of Marathon® CPCryopumps and MRI coolers, proven the world over with millions of reliable operating hours. Theyhave been recognized as the industry standard since we developed the technology over 40 years ago.Our original pneumatic drive, which limits the number of wear parts in the refrigerator, combined withstate-of-the-art design features, results in superior performance and low maintenance costs. Selectmodels, such as the CH-208 (left), also feature Whisper® technology for quieter operation.SHI’s 10K Cryocoolers have proven reliability in thousands of applications, includingMRI, cryopumping, research and other custom low-temperature applications.SH I CryogenicsGroup’s 4K Gifford-McMahon Cryocoolers arerecognized as the most reliableand versatile systems available in themarketplace. These Cryocoolers featurehigh cooling capacities, compact designs and areorientation-free. Models like the SRDK-408D2 (left) are the standardfor MRI and other superconducting magnets and can be found cooling awide variety of analytical and experimental devices and offer a verycost effective alternative to open-cycle liquid helium systems.SHI’s 4K Pulse Tube Cryocoolers embody leading-edge technologyand provide low vibration, high reliability and low maintenancerequirements. They are uniquely designed with no moving partsinside the coldhead. I n addition, the SRP-062B (right) featuresan optional separated valve unit to further reduce vibration, enableoperation in higher magnetic fields and ease maintenance requirements. SHI PulseTube Cryocoolers provide a stable low-temperature solution for sensitive measurementand analytical applications.For additional literature and information regarding 10K Cryocooler, 4K G-M and PulseTube Cryocooler designs, please contact your local SHI Cryogenics Group sales office.11For Information in:AsiaSumitomo Heavy Industries, Ltd.ThinkPark TowerCryogenics Division, Sales Department 1-1, Osaki 2-Chome, Shinagawa-Ku Tokyo 141-6025, Japan Phone: +81-3-6737-2550Fax: +81-3-6866-5114E-mail:***********.jpCryogenics Division, Service Department 2-1-1, Yato-cho, Nishitokyo-city Tokyo 188-8585, Japan Phone: +81-42-468-4265Fax: +81-42-468-4254E-mail:*******************.jpUnited StatesSumitomo (SHI) Cryogenics of America, Inc.1833 Vultee Street Allentown, PA 18103Phone: +1 610-791-6700Fax: +1 610-791-0440E-mail:***********************EuropeSumitomo (SHI) Cryogenics of Europe, Ltd.3 Hamilton Close, Houndmills Industrial Estate Basingstoke, Hampshire RG21 6YT United KingdomPhone: +44 (0) 1256 853333Fax: +44 (0) 1256 471507E-mail:************************.ukSumitomo (SHI) Cryogenics Shanghai, Ltd.Building 15Lane 333 Zhujian Road Minhang DistrictShanghai 201107, P .R. China Phone: +86-21-5486-6318Fax: +86-21-5486-0065E-mail:***********************.jpSumitomo (SHI) Cryogenics of America, Inc.1700 Wyatt Drive Suite 13Santa Clara, CA 95054Phone: +1 408-645-3346Fax: +1 408-736-7325Sumitomo (SHI) Cryogenics of Europe, GmbH Daimlerweg 5aDarmstadt D-64293, Germany Phone: +49 (0) 6151 860 610Fax: +49 (0) 6151 800 252E-mail:***********************Sumitomo (SHI) Cryogenics Korea Co., Ltd.3F , 280-3, Saneop-ro155beon-gil, Gweonseon-GuSuwon-City, Gyeonggi-Do, South Korea Phone: +82-31-278-3050Fax: +82-31-278-3053E-mail:******************.jpSumitomo (SHI) Cryogenics T aiwan Co., Ltd.4th Floor, No. 3Lane 216, Gongyuan Rd.Hsinchu City 300, Taiwan ROC Phone: +886 3 561 2557Fax: +886 3 562 3400Sumitomo (SHI) Cryogenics of America, Inc.1500-C Higgins RoadElk Grove Village, IL 60007Phone: +1 847-290-5801Fax: +1 847-290-1984World Wide Web: © SHI Cryogenics Group 2/16。
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AbstractQuantitative evaluation of methane hydrate (MH) bearing turbidite reservoir in the eastern Nankai Trough, offshore Japan is conducted using a combination of 3-D seismic and well data. For constructing 3-D facies model, we have interpreted internal sand body and stacking patterns of the channels to discuss reservoir heterogeneities of the turbidite channels. Geobody using seismic volume rendering shows that the extracted body is distributed toward northeast to southwest directions in good agreement with the direction of the channel-filling sediments according to the seismic sequence stratigraphic analysis. Stacking patterns of channel facies are identified around the ß1 well. The identified channels exhibit low sinuosity channels consisting of various magnitudes of channel widths ranging from tens to several hundred meters. Orientation of these channels typically exhibits north-to-south and north-northeast-to-south-southwest directions, which are consistent with Paleo-flow current directions. Internal property of the stacking patterns of the channel sediments is examined using a seismic acoustic inversion analysis. The distribution patterns of the velocity between the BSR and the top of the MH-bearing sediments show that higher velocities are particularly identified along north-northeast direction, which coincides with the sediment supplies of the turbidite channels. Assuming a simple rock physics model, distribution of hydrate saturation is also correlated well with the facies distributions. This fact suggests that reservoir architecture of the MH-bearing turbidite channels is primary controlled by sedimentary conditions (i.e., depositional systems) of the turbidite channels.IntroductionThe eastern Nankai Trough, which is located offshore of central Japan, is considered an attractive potential resource of methane hydrates (MHs) and a candidate for the exploitation and production of MH test fields (Fujii et al., 2008, 2009; Yamamoto et al., 2009). Previous works conducted various studies of seismic, well logging, and coring operations such as “Nankai Trough” exploratory test well (which was acquired in 1999), a 2-D seismic survey in 2001 (2,802 km), 3-D seismic surveys in 2002 (the total area of three survey fields was 1,960 km 2), and a multiple well-drilling campaign in 2004 by the Ministry of Economy, Trade and Industry (METI). According to the results, MHs are developed in the pore spaces of an unconsolidated sandy sediment within the deep submarine-fan turbidite system (Nakamizu et al., 2004; Takahashi et al., 2004; Tsuji et al., 2004; Uchida et al., 2004). In some locations in the eastern Nankai Trough, MHs are selectively accumulated in the turbidit e formations; such zones are called “MH -concentrated zones”. These MH -concentrated zones are the best targets for recovering MHs for future exploitation and for the commercialization of MHs. Therefore, our primary target is the MH-concentrated zones to characterize reservoir potentials of MHs.In this paper, we focus on the submarine channel types of the MH-bearing sediments (ß MH-concentrated zone, hereafter ß site) in one of the MH-concentrated zones in the eastern Nankai Trough. In particular, we discuss quantitaive evaluation of facies distributiona and internal properties for characterizing the reservoir heterogeneities in the MH-bearing turbidite channels.Background of study around ß siteOur study area is located in the Tokai-Kumano forearc basins along the Nankai Trough, central Japan (Fig. 1). ß site is situated within the 3-D seismic survey area in Daini Atsumi. Depositional system in the eastern Nankai Trough area is submarine-fan turbidites consisting of Pleistocene Kakegawa and Ogasa Formations (Takano et al., 2008, 2009). MH concentrated zone corresponds to a trough-filled channels of turbidite system in Stage 3 (Noguchi et al., 2011). Noguchi et al. (2011) qualitatively interpreted reservoir architectures of the MH-bearing turbidite channels in the ß site by seismic and well IPTC 15351Quantitative characterization of methane hydrate reservoir in the eastern Nankai Trough, Japan Satoshi Noguchi, Toshiko Furukawa, Than Tin Aung, Nobutaka Oikawa, Japan Oil gas and Metals National Corporation, Schlumberger Oil Field Service Copyright 2011, International Petroleum Technology ConferenceThis paper was prepared for presentation at the International Petroleum Technology Conference held in Bangkok, Thailand, 15–17 November 2011. This paper was selected for presentation by an IPTC Programme Committee following review of information contained in an abstract submitted by the author(s). Contents of the paper, as presented, have not been reviewed by the International Petroleum Technology Conference and are subject to correction by the author(s). The material, as presented, does not necessarily reflect any position of the International Petroleum Technology Conference, its officers, or members. Papers presented at IPTC are subject to publication review by Sponsor Society Committees of IPTC. Electronic reproduction, distribution, or storage of any part of this paper for commercial purposes without the written consent of the International Petroleum Technology Conference is prohibited. Permission to reproduce in print is restricted to an abstract of not more than 300 words; illustrations may not be copied. The abstract must contain conspicuous acknowledgment of where and by whom the paper was presented. Write Librarian, IPTC, P.O. Box 833836, Richardson, TX 75083-3836, U.S.A., fax +1-972-952-9435IPTC 15351 Quantitative characterization of methane hydrate reservoir in the eastern Nankai Trough, Japan Satoshi Noguchi, Toshiko Furukawa, Nobutaka Oikawa, Japan Oil gas and Metals National Corporation, Than Tin Aung, Schlumberger K. K. Copyright 2011, International Petroleum Technology Conference This paper was prepared for presentation at the International Petroleum Technology Conference held in Bangkok, Thailand, 15–17 November 2011. This paper was selected for presentation by an IPTC Programme Committee following review of information contained in an abstract submitted by the author(s). Contents of the paper, as presented, have not been reviewed by the International Petroleum Technology Conference and are subject to correction by the author(s). The material, as presented, does not necessarily reflect any position of the International Petroleum Technology Conference, its officers, or members. Papers presented at IPTC are subject to publication review by Sponsor Society Committees of IPTC. Electronic reproduction, distribution, or storage of any part of this paper for commercial purposes without the written consent of the International Petroleum Technology Conference is prohibited. Permission to reproduce in print is restricted to an abstract of not more than 300 words; illustrations may not be copied. The abstract must contain conspicuous acknowledgment of where and by whom the paper was presented. Write Librarian, IPTC, P.O. Box 833836, Richardson, TX 75083-3836, U.S.A., fax +1-972-952-94352 IPTC 15351 data. According to the results, orientation of turbidite channels around ß site is coincident with the direction of sediment supply which was confirmed by seismic sequence stratigraphic analysis. They also suggested that distribution of the channels sediments is roughly correlated with the higher velocity intervals implying that the reservoir architecture of the channels is closely related to sedimentary conditions of the turbidite system.Based on the previous studies, we constructed workflow for characterizing the MH-bearing turbidite reservoirs. Figure 2 depicts workflow for constructing 3-D reservoir model. After constructing 3-D geological frame by geological horizons and faults, internal properties of the geological frame are quantitatively evaluated using both 3-D facies modeling and petrophysical modeling. In this study, we discussed reservoir heterogeneities in the turbidite channels taking into account for an extracting the sand body, an interpretation of the stacked channel patterns, and the internal properties of the channel sediments by using seismic data from around the ß1 well.Results and discussionsFacies distribution of the turbidite channels around ß1 wellOur model area is focused on 2 km x 2 km from a central point of ß1 well. The geological frame consists of several geological horizons. Because there is no strucural falult around ß site, we used simple grid model by five horizons that were identified at sequence boundaries. Internal layers are also classified depending on the thickness of horizons and other technical issues (Aung et al., 2011).Internal sand bodies and connectivity within the MH-bearing sediments are first evaluated by geobody obtained from seismic volume rendering (Fig. 3). Here we examine a seismic sweetness (reflection strength (amplitude envelope)/square root of instantaneous frequency) to identify the channel body of the MH-bearing sediments. Figure 3 shows an interpretation of geobody using the seismic sweetness. Two isolated bodies are identified at below/above the BSR by extracting higher sweetness value (white and green bodies shown in Fig. 3). Green body corresponds to the interval of the MH-bearing sediments. The boundary between the MH-bearing sediments and the sediments without the MHs shows higher impedance contrast which generates higher reflection strength (i.e., high sweetness). Distribution of the extracted green body also coincides with a direction of the channel-filling sediments supplied from northeast according to the seismic facies distribution (Noguchi et al., 2011).On the other hand, northern side of the white body distributes a boundary of the BSR and/or below the BSR. The BSR shows physical boundary between the MH-bearing sediments and gas-bearing sediments below the BSR. Thus, the higher sweetness of the extracted white body is probably due to both high reflection strength and low instantaneous frequency caused by the gas effect. Western side of the white body exhibits a boundary of the gas-water contact implying that the extracted white body represents the gas-bearing sediments. Although distributions of the gas in the sediments may be related to the continuity of the lithofacies (i.e., pathway of gas migration), the extracted white body clearly shows the physical boundary of the gas-bearing sediments, which do not represent sand body of the turbidite channels.Identification of stacked channels and geometriesInterpretation of the several stacking patterns of channel facies is identified within the sequence Og-b around the ß1 well. We first extracted a bottom frame of the stacked channels above the BSR (i.e., the lower generation of the channels) and classified it into several distinct channels (Fig. 4 (a)). One should note that some of the channels of the lower generation below the BSR are difficult to see in the seismic section because of the gas-bearing sediments that disturbed the seismic reflectors. For this reason, we extracted the bottom frame of the stacked channels in this study at the lower stability limit of MH up to the BSR line.The typical bottom frame of the channels exhibits variable widths (from several hundreds of meters), whereas the depth of the channels varies (ranging from several tens to hundreds of meters). The identified bottom frame of the channels mainly descends from the north-northeast to the south-southwest direction (Fig. 4 (a)). The paleo-current direction of the channels is identical to the direction of the sediment supplies (e.g., north-northeast), and this is indicated by the seismic facies distribution of sequence Og-b (Noguchi et al., 2011). Channel orientation and geometries (channel width, depth, and length) are also quantified for each stacked patterns of channel (Fig. 4 (b) and (c)). We account for geometries of various magnitudes of the channels around ß site to construct 3-D facies model. Channel oprientation slightly varies from 0o to 40o depending on the identified channels (BF01–BF04). Similarly, channel width, depth, and length are variable depending on the stacked patterns of the channels. These parameters are set into the facies model by channel object modeling (Fig. 4 (c)).Internal properties of the MH-bearing turbidite channelsThe internal properties of the interpreted channels are evaluated using a seismic impedance inversion analysis. Figure 5 (a) shows the result of acoustic P-impedance between the BSR and the top of the MH-bearing sediments. We used the constant value of the density as 1000 kg/m3in order to evaluate velocity distributions of the MH-bearing sediments. The typical velocities of the MH-bearing sediments around the ß1 well range from 1800 m/s to 2200 m/s. The correlation between the velocity distributions and the bottom frame of the channels shows those higher velocities (e.g., greater than 2,000 m/s) are rarely observed in some locations: at the northern side of the channels above BF01, BF04, BF06, and BF09. The distribution patterns of the higher velocities are oriented toward north-northeast (indicated by arrows) which coincides with the direction of sediment supply of the turbidites.IPTC 15351 3 Distributions of hydrate saturation are also estimated by a simple rock physics model (Lee and Collett, 2001; Inamori et al. 2008) by considering a relationship among seismic velociy (acoustic impedance), hydrate saturation (well), and P-sonic data. Calculated hydrate saturation shows that higher saturation rate is distributed toward north-northeast direction which coincides with the direction of sediment supply of the turbidites (Fig. 5 (b)). Hence, this result satisfactorily explains the relationship between facies distribution and internal property of the channels.Summary and future worksIn this study, we quantitatively discussed the reservoir heterogeneities of the MH-bearing turbidite channels in terms of facies distributions and internal properties by seismic inversion analysis.The interpretation of geobody shows that the extracted body extends to northeast-southwest direction which correlates well with the direction of the channel filled sediments according to the seismic sequence stratigraphic analysis. The stacking patterns of the channels also show that paleo current flow directions of the identified channels are typically oriented along north-to-south and north-northeast-to-south-southwest directions.Internal property of the stacking patterns of the channel sediments is examined using a seismic acoustic inversion analysis. The distribution patterns of the velocity between the BSR and the top of the MH-bearing sediments show that higher velocities are particularly identified along north-northeast direction in coincident with the sediment supplies of the turbidite channels. Estimated hydrate saturation map obtained by inversion data also reveals that there is good relationship between facies distribution and reservoir properties of the channels. This observational fact satisfactorily explains the qualitative evaluation of reservoir architecture of the MH-bearing turbidite channels.AcknowledgementThe 2-D/3-D seismic data and the well-log data of the exploratory test wells “Tokai-oki to Kumanonada” were acquired by METI. We would like to thank METI, Methane Hydrate 21 Research Consortium (MH21 Consortium), and Japan Oil, Gas and Metals National Corporation for providing permission to publish this paper.ReferenceAung, T. T, Noguchi, S., Oikawa, N., Kanno, T., Tamaki, M., Akihisa, K., 2011. Integrated facies modeling workflow for mthane hydrate reservoir along the eastern Nankai Trough, Japan, Proceedings of International Petroleum Technology Conference, Bangkok, Thailand, (IPTC15303).Fujii, T., Saeki, T., Kobayashi, T., Inamori., T, Hayashi, M., Takano, O., Takayama, T., Kawasaki, T., Nagakubo, S., Nakamizu., Yokoi, K., 2008. Resource assessment of methane hydrate in the Eastern Nankai Trough, Japan. Proceedings of 2008 Offshore Technology Conference, Houston, Texas, U.S.A. (OTC19310).Fujii, T., Saeki, T., Kobayashi, T., Inamori., T, Hayashi, M., Takano, O., Takayama, T., Kawasaki, T., Nagakubo, S., Nakamizu., Yokoi, K., 2009, Resource assessment of methane hydrate by applying a probabilistic approach in the Eastern Nankai Trough, Japan. Journal of Geography 118, 814-834 (In Japanese with English abstract).Inamori, T., Fujii, T., Takayama, T., Saeki, T., and Yamamoto, K., 2008. A trial of monitoring of the methane hydrate-production test by sonic well logging data, Abstracts of Japan Geoscience Union Meeting 2008, Makuhari, Japan.Lee, M.W. and Collett, T.S., 2001. Elastic properties of gas hydrate-bearing sediments. Geophysics, 66, 763–771.Nakamizu, M, Namikawa, T., Ochiai, K., Tsuji, Y., 2004. Efforts heading for production of methane from methane hydrate resources–An outline of METI exploratory test well “Nankai Trough” and future research program and development plan. Journ al of the Japanese Association for Petroleum Technology 69, 214-221 (in Japanese with English abstract).Noguchi, S., Shimoda, N., Takano, O., Oikawa, N., Inamori, T., Saeki, T., Fujii, T., 2011. 3-D Internal architecture of methane hydrate- bearing turbidite channels in the eastern Nankai Trough, Japan. Journal of Marine and Petroleum Geology, In Press.Takahashi, H., Yonezawa, T., Takedomi, Y., 2001. Exploration for Natural Hydrate in Nankai-Trough Well Offshore Japan. Proceedings of 2001 Offshore Technology Conference, Houston, Texas, U.S.A. (OTC13040).Takano, O., Nishimura, M., Fujii, T., Saeki, T., 2008. Changes in submarine fan sedimentation processes in response to forearc basin tectonics along the Nankai Trough, Philippine sea plate subduction zone. Abstracts of 6th international Conference on Asia Marine Geology, Kochi, Japan 2008, O-027.Takano, O., Nishimura, M., Fujii, T., Saeki, T., 2009. Sequence stratigraphic distribution analysis of methane-hydrate-bearingsubmarine-fan turbidite sandstones in the Eastern Nankai Trough area: Relationship between turbidite facies distributions and BSR occurrence. Journal of Geography 118, 814-834 (in Japanese with English abstract).Tsuji, Y., Ishida, H., Nakamizu, M., Matsumoto, R., Shimizu, S., 2004. Overview of the METI Nankai Trough Wells: A Milestone in the Evaluation of Methane Hydrate Resources. Resource Geology 54, 3-10.Uchida, T., Lu, H., Tomaru, H., the MITI Nankai Trough Shipboard Scientists., 2004. Subsurface occurrence of natural gas hydrate in the Nankai Trough area: Implication for gas hydrate concentration. Resource Geology 54, 35-44.Yamamoto, K., 2009. Production techniques for methane hydrate resources and field test programs; Journal of Geography, v. 118, no. 5, p. 913–934 (Japanese with English abstract).4 IPTC 15351Figure 1: Location map of the 2-D/3-D seismic surveys and the METI “Tokai-oki toKumano-nada” exploratory test wells.Figure 2: Workflow for constructing 3-D reservoir model.IPTC 15351 5Figure 3: Geobody using seismic volume rendering extracts two isolated bodiesaround ß1 well.Figure 4: (a) A graph depicting the identified bottom frame of the channels around the ß1 well.Arrows indicate the direction of the sediment supplies. (b) Extraction of channel geometries ofvarious magnitudes of channel width, depth, length, and orientations. (c) Constructing faciesmodel by considering geometries within the channel object.6 IPTC 15351Figure 5 (a) Acoustic impedance between the BSR and the top of the MH-bearingsediments.(b) Hydrate saturation map based on the impedance inversion data anda simple rock physics model.。