FQT13N06L中文资料

* When mounted on the minimum pad size recommended (PCB Mount)
D
!
"
!"
G!
" "
!
S
FQT13N06L 60 2.8 2.24 11.2 ± 20 85 2.8 0.21 7.0 2.1
0.017 -55 to +150
300
Typ
Max
Figure 5. Capacitance Characteristics
Capacitance [pF]
©2001 Fairchild Semiconductor Corporation
VGS , Gate-Source Voltage [V]
IDR, Reverse Drain Current [A]
元器件交易网
FQT13N06L
FQT13N06L
60V LOGIC N-Channel MOSFET
May 2001
QFET TM
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C) - Derate above 25°C
Operating and Storage Temperature Range
ID, Drain Current [A]
101
100 150℃
25℃ -55℃
※ Notes :
1. 2.
V25DS0μ=s25PVulse
Test
10-1
0
2
4
6
8
10
V , Gate-Source Voltage [V] GS
Figure 2. Transfer Characteristics
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 30 V, ID = 6.8 A, RG = 25 Ω
--
8
25
-- 90 190
-- 20
50
(Note 4, 5) --
40
90
VDS = 48 V, ID = 13.6 A,
-- 4.8 6.4
VGS = 5 V
-- 1.6
--
(Note 4, 5) --
2.7
--
V V/°C µA µA nA nA
V Ω S
pF pF pF
ns ns ns ns nC nC nC
Drain-Source Diode Characteristics and Maximum Ratings
101
100
10-1 0.2
150℃
25℃
※ Notes :
1. 2.
V25G0Sμ=s0VPulse
Test
0.4
0.6
0.8
1.0
1.2
V , Source-Drain voltage [V] SD
Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature
©2001 Fairchild Semiconductor Corporation
Rev. A, May 2001
元器件交易网
FQT13N06L
Typical Characteristics
101 Top :
10.V0GVS
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
Bottom : 3.0 V
ID, Drain Current [A]
DS(ON) R [mΩ ], Drain-Source On-Resistance
100 10-1
※ Notes : 1. 250μ s Pulse Test
2. TC = 25℃
100
101
V , Drain-Source Voltage [V] DS
Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 70°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
RθJA
Thermal Resistance, Junction-to-Ambient *
800 600 400 200
0 10-1
C = C + C (C = shorted)
iss
gs
gd ds
C =C +C
oss
ds
gd
C =C
rss
gd
※ Notes : 1. V = 0 V
GS
2. F = 1 MHz
Ciss
Coss
C rss
100
101
VDS, Drain-Source Voltage [V]
--
1
--
--
10
IGSSF IGSSR
Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V
--
--
100
--
-- -100
D
S
G SOT-223
FQT Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PDTJ, TFra bibliotekTGTL
Parameter
Drain-Source Voltage
Features
• 2.8A, 60V, RDS(on) = 0.11Ω @VGS = 10 V • Low gate charge ( typical 4.8 nC) • Low Crss ( typical 17 pF) • Fast switching • Improved dv/dt capability
--
--
1.5
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 13.6 A,
-- 45
--
ns
dIF / dt = 100 A/µs
(Note 4)
--
45
--
nC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 12.6mH, IAS = 2.8A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 13.6A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature
VGS = 0 V, ID = 250 µA
60
--
--
ID = 250 µA, Referenced to 25°C -- 0.05
--