SPP11N60S5中文资料

Cool MOS™ Power TransistorV DS 600V R DS(on)0.38ΩI D11AFeature• New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme d v /d t rated• Ultra low effective capacitances • Improved transconductanceType Package Ordering CodeSPP11N60S5P-TO220-3-1Q67040-S4198SPB11N60S5P-TO263-3-2Q67040-S4199SPI11N60S5 P-TO262Q67040-S4338Marking 11N60S511N60S511N60S5Maximum Ratings ParameterSymbol Value Unit Continuous drain current T C = 25 °C T C = 100 °CI D117APulsed drain current, t p limited by T jmax I D puls 22Avalanche energy, single pulse I D = 5.5 A, V DD = 50 VE AS340mJAvalanche energy, repetitive t AR limited by T jmax 1)I D = 11 A, V DD = 50 VE AR 0.6Avalanche current, repetitive t AR limited by T jmax I AR 11A Gate source voltage V GS ±20V Gate source voltage AC (f >1Hz)V GS ±30Power dissipation, T C = 25°CP tot 125W Operating and storage temperatureT j , T stg-55... +150°CMaximum RatingsParameter Symbol Value Unit Drain Source voltage slopeV DS = 480 V, I D = 11 A, T j = 125 °Cd v/d t20V/nsThermal CharacteristicsParameter Symbol Values Unitmin.typ.max. Thermal resistance, junction - case R thJC --1K/W Thermal resistance, junction - ambient, leaded R thJA--62SMD version, device on PCB: @ min. footprint@ 6 cm2 cooling area 2)R thJA---3562-Soldering temperature,1.6 mm (0.063 in.) from case for 10sT sold --260°CElectrical Characteristics, at T j=25°C unless otherwise specifiedParameter Symbol Conditions Values Unitmin.typ.max. Drain-source breakdown voltage V(BR)DSS V GS=0V, I D=0.25mA600--V Drain-Source avalanchebreakdown voltageV(BR)DS V GS=0V, I D=11A-700-Gate threshold voltage V GS(th)I D=500µΑ, V GS=V DS 3.5 4.5 5.5Zero gate voltage drain current I DSS V DS=600V, V GS=0V,T j=25°C, T j=150°C ----25250µAGate-source leakage current I GSS V GS=20V, V DS=0V--100nA Drain-source on-state resistance R DS(on)V GS=10V, I D=7A,T j=25°C T j=150°C --0.340.920.38-ΩGate input resistance R G f=1MHz, open Drain-29-Electrical Characteristics , at T j = 25 °C, unless otherwise specifiedParameter Symbol Conditions Values Unitmin.typ.max. CharacteristicsTransconductance g fs V DS≥2*I D*R DS(on)max,I D=7A-6-SInput capacitance C iss V GS=0V, V DS=25V,f=1MHz -1460-pFOutput capacitance C oss-610-Reverse transfer capacitance C rss-21-Effective output capacitance,3) energy related C o(er)V GS=0V,V DS=0V to 480V-45-pFEffective output capacitance,4)time relatedC o(tr)-85-Turn-on delay time t d(on)V DD=350V, V GS=0/10V,I D=11A, R G=6.8Ω-130-nsRise time t r-35-Turn-off delay time t d(off)-150225Fall time t f-2030Gate Charge CharacteristicsGate to source charge Q gs V DD=350V, I D=11A-10.5-nC Gate to drain charge Q gd-24-Gate charge total Q g V DD=350V, I D=11A,V GS=0 to 10V-41.554Gate plateau voltage V(plateau)V DD=350V, I D=11A-8-V1Repetitve avalanche causes additional power losses that can be calculated as PAV=E AR*f.2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.3Co(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS. 4Co(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.Electrical Characteristics, at T j = 25 °C, unless otherwise specifiedParameter Symbol Conditions Values Unitmin.typ.max. Inverse diode continuousforward currentI S T C=25°C--11AInverse diode direct current,pulsedI SM--22 Inverse diode forward voltage V SD V GS=0V, I F=I S-1 1.2VReverse recovery time t rr V R=350V, I F=I S ,d i F/d t=100A/µs -6501105nsReverse recovery charge Q rr-7.9-µCTypical Transient Thermal CharacteristicsSymbol Value Unit Symbol Value Unittyp.typ.Thermal resistanceR th10.015K/W R th20.03R th30.056R th40.197R th50.216R th60.083Thermal capacitanceC th10.0001878Ws/K C th20.0007106C th30.000988C th40.002791C th50.007285C th60.0631 Power dissipation P tot = f (T C)SPP11N60S5Ptot2 Safe operating areaI D = f ( V DS)parameter : D = 0 , T C=25°C3ID3 Transient thermal impedanceZ thJC = f (t p)parameter: D = t p/T-1101010101010K/WZthJC4 Typ. output characteristicI D = f (V DS); Tj=25°Cparameter: t p = 10 µs, V GSID5 Typ. output characteristicI D = f (V DS); T j=150°C parameter: t p = 10 µs, V GSID6 Typ. drain-source on resistanceR DS(on)=f(I D)parameter: T j=150°C, V GS7 Drain-source on-state resistanceR DS(on) = f(T j)parameter : I= 7 A, V = 10 VRDS(on)8 Typ. transfer characteristicsI D= f( V GS ); V DS≥ 2 x I D x R DS(on)maxparameter: t p = 10 µsID9 Typ. gate charge V GS= f (Q Gate) parameter: I= 11 A pulsedVGS10 Forward characteristics of body diodeI F = f (V SD)parameter: T, t p = 10 µsIF11 Avalanche SOAI AR = f (t AR)par.: T j≤ 150 °C4IAR12 Avalanche energyE AS = f (T j)par.: I D = 5.5 A, V DD = 50 VE13 Drain-source breakdown voltage V(BR)DSS = f (T j)SPP11N60S5V(BR)DSS14 Avalanche power lossesP AR = f (f )parameter: E AR=0.6mJ6PAR15 Typ. capacitancesC = f (V DS)parameter: V GS=0V, f=1 MHz16 Typ. C oss stored energyE oss=f(V DS)EDefinition of diodes switching characteristicsP-TO-220-3-1All metal surfaces tin plated, except area of cut. Metal surface min. x=7.25, y=12.3P-TO-263-3-2 (D2-PAK)P-TO-262-3-1 (I2-PAK)1)TypicalMetal surface min. X = 7.25, Y = 6.9All metal surfaces tin plated, except area of cut.Published byInfineon Technologies AG,Bereichs KommunikationSt.-Martin-Strasse 53,D-81541 München© Infineon Technologies AG 1999All Rights Reserved.Attention please!The information herein is given to describe certain components and shall not be considered as warranted characteristics.Terms of delivery and rights to technical change reserved.We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein.Infineon Technologies is an approved CECC manufacturer.InformationFor further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). WarningsDue to technical requirements components may contain dangerous substances.For information on the types in question please contact your nearest Infineon Technologies Office.Infineon Technologies Components may only be used in life-support devices or systems with the expresswritten approval of Infineon Technologies, if a failure of such components can reasonably be expected tocause the failure of that life-support device or system, or to affect the safety or effectiveness of that deviceor system Life support devices or systems are intended to be implanted in the human body, or to supportand/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the healthof the user or other persons may be endangered.。