MSA-0486-TR1 双极微波单片集成电路分放大器

Cascadable Silicon Bipolar MMIC␣Amplifier Technical DataFeatures•Cascadable 50 Ω Gain Block • 3 dB Bandwidth:DC to 3.2 GHz•8 dB Typical Gain at 1.0␣GHz •12.5 dBm Typical P 1 dB at 1.0␣GHz •Unconditionally Stable (k>1)•Surface Mount Plastic Package •Tape-and-Reel Packaging Option Available [1]MSA-048686 Plastic PackageTypical Biasing ConfigurationNote:1.Refer to PACKAGING section “Tape-and-Reel Packaging for Surface Mount Semiconductors”.R V CC > 7 VINOUTDescriptionThe MSA-0486 is a high perfor-mance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost,surface mount plastic package.This MMIC is designed for use as a general purpose 50 Ω gain block.Typical applications includenarrow and broad band IF and RF amplifiers in commercial and industrial applications.The MSA-series is fabricated using HP’s 10 GHz f T , 25␣GHz f MAX ,silicon bipolar MMIC process which uses nitride self-alignment,ion implantation, and gold metalli-zation to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.MSA-0486 Absolute Maximum RatingsParameterAbsolute Maximum [1]Device Current85 mA Power Dissipation [2,3]500 mW RF Input Power+13 dBm Junction Temperature 150°C Storage Temperature–65 to 150°CThermal Resistance [2,4]:θjc = 100°C/WNotes:1.Permanent damage may occur if any of these limits are exceeded.2.T CASE = 25°C.3.Derate at 10 mW/°C for T C > 100°C.4.See MEASUREMENTS section “Thermal Resistance” for more information.Part Number Ordering InformationPart Number No. of DevicesContainer MSA-0486-TR110007" Reel MSA-0486-BLK100Antistatic BagFor more information, see “Tape and Reel Packaging for Semiconductor Devices”.G P Power Gain (|S 21|2) f = 0.1 GHz dB8.3f = 1.0 GHz 7.08.0∆G P Gain Flatness f = 0.1 to 2.0 GHzdB ±0.6f 3 dB 3 dB Bandwidth GHz3.2I nput VSWR f = 0.1 to 3.0 GHz 1.5:1Output VSWR f = 0.1 to 3.0 GHz 1.9:1NF 50 Ω Noise Figuref = 1.0 GHz dB 7.0P 1 dB Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 12.5IP 3Third Order Intercept Point f = 1.0 GHz dBm 25.5t D Group Delay f = 1.0 GHz psec 140V d Device VoltageV 4.25.256.3dV/dTDevice Voltage Temperature CoefficientmV/°C–8.0Note:1.The recommended operating current range for this device is 30 to 70 mA. Typical performance as a function of current is on the following page.Electrical Specifications [1], T A = 25°CSymbolParameters and Test Conditions: I d = 50 mA, Z O = 50 ΩUnitsMin.Typ.Max.VSWRMSA-0486 Typical Scattering Parameters (Z O = 50 Ω, T A = 25°C, I d = 50 mA)Freq.GHzMagAngdBMagAngdBMagAngMagAng0.1.141788.4 2.62175–16.2.1541.16–100.2.141758.3 2.61170–16.3.1532.16–200.4.141718.2 2.57161–16.3.1543.17–390.6.131688.1 2.54151–16.0.1584.18–570.8.131668.0 2.52141–15.9.1615.20–741.0.131657.92.48131–15.7.1656.21–881.5.151687.7 2.42108–14.8.1828.27–1212.0.211687.3 2.3284–14.0.1997.32–1492.5.29165 6.8 2.1865–13.1.2224.38–1683.0.371535.9 1.9743–12.7.231–1.401733.5.44142 4.8 1.7424–12.5.238–5.411574.0.50130 3.6 1.527–12.5.238–10.411455.0.61109 1.3 1.16–21–12.7.231–17.43132A model for this device is available in the DEVICE MODELS section.S 11S 21S 12 S 226.56.07.07.58.0FREQUENCY (GHz)Figure 5. Noise Figure vs. Frequency.N F (d B )G p (d B )FREQUENCY (GHz)Figure 1. Typical Power Gain vs. Frequency, T A = 25°C.246810V d (V)Figure 2. Device Current vs. Voltage.20406080I d (m A )2345671–25+25+55+85P 1 d B (d B m )N F (d B )G p (d B )TEMPERATURE (°C)Figure 3. Output Power at 1 dB Gain Compression, NF and Power Gain vs. Case Temperature, f = 1.0 GHz, I d =50mA.FREQUENCY (GHz)Figure 4. Output Power at 1 dB Gain Compression vs. Frequency.36912151821P 1 d B (d B m )Typical Performance, T A = 25°C(unless otherwise noted)86 Plastic Package Dimensions0.51 ±(0.020 ±DIMENSIONS ARE IN MILLIMETERS (INCHES)。