LG贴片三极管代码

SOT-23 Plastic-Encapsulate Transistors

2SC3052 TRANSISTOR (NPN) FEATURES z Low collector to emitter saturation voltage V CE(sat)=0.3V max(@I C =100mA,I B =10mA)

z

Excellent linearity of DC forward current gain MAXIMUM RATINGS (T a =25℃ unless otherwise noted)

ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified)

Parameter

Symbol Test conditions M in M ax Unit Collector-base breakdown voltage

V (BR) CBO I C = 100 μA, I E =0 50 V Collector-emitter breakdown voltage

V (BR) CEO I C = 100 μA, I B =0 50 V Emitter-base breakdown voltage

V (BR) EBO I E = 100 μA, I C =0 6 V Collector cut-off current

I CBO V CB = 50 V , I E =0 0.1 μA Emitter cut-off current

I EBO V EB = 6V , I C =0 0.1 μA h FE(1)V CE = 6V, I C = 1mA 150 800 DC current gain

h FE(2) V CE = 6V, I C = 0.1mA 50 Collector-emitter saturation voltage

V CE (sat) I C =100mA, I B = 10mA 0.3 V Base-emitter saturation voltage

V BE (sat) I C = 100mA, I B = 10mA 1

V Transition frequency f T

V CE = 6V, I C = 10mA 180

MHz Collector output capacitance

C ob V CE =6V, I E =0, f=1MHz 4 pF Noise figure NF V CE =6V,I E =-0.1mA, f=1KHz, R G =2K Ω 15 dB

CLASSIFICATION OF h FE(1)

Rank

E F G Range

150~300 250~500 400~800 Marking LE LF LG

SOT-23 Plastic-Encapsulate Transistors

2SC2712 TRANSISTOR (NPN) FEATURE · Low Noise: NF=1 dB (Typ),10dB(MAX)

· Complementary to 2SA1162

MAXIMUM RATINGS (T a =25 unless otherwise noted)

ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified)

Parameter Symbol Test conditions Min Typ Max Unit

Collector-base breakdown voltage

V (BR)CBO I C = 100μA, I E =0 60 V Collector-emitter breakdown voltage

V (BR)CEO I C =1mA ,I B =0 50 V Emitter-base breakdown voltage

V (BR)EBO I E = 100μA, I C =0 5 V Collector cut-off current

I CBO V CB = 60 V, I E =0 0.1 μA Emitter cut-off current

I EBO V EB =5V, I C =0 0.1 μA DC current gain

h FE V CE =6V, I C =2mA 70 700 Collector-emitter saturation voltage

V CE(sat) I C = 100mA, I B =

10mA 0.1 0.25 V Transition frequency

f T V CE =10V, I C = 1mA 80 MHz Output capacitance

C ob V CB =10V, I E =0,f=1 MHz 2.0 3.5 pF Noise Figure NF V CE =6V,I C =0.1mA,f=1kHz,

Rg=10k Ω 1.0 10 dB

CLASSIFICATION OF h FE

Rank

O Y GR BL Range

70-140 120-240 200-400 350-700 Marking LO LY LG LL

℃

2SC2712 Typical Characterisitics

Static Characteristic h ——

I

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