2SC2060三极管(TO-92L)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors

2SC2060 TRANSISTOR (NPN)

FEATURE

z Power D issipation P CM : 0.75 W (T a =25℃)

z Low S aturation V oltage (V CE(sat)=0.15V at 500mA) z

Complementary P air with 2SA934

MAXIMUM RATINGS (T a =25℃ unless otherwise noted)

ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified)

Parameter

Symbol Test conditions

M in

M ax Unit

Collector-base breakdown voltage V(BR)CBO I C = 100μA , I E =

0 40 V

Collector-emitter breakdown voltage V(BR)CEO I C = 1mA , I B =0 32 V Emitter-base breakdown voltage V(BR)EBO I E = 100μA, I C =0 5 V

Collector cut-off current I CBO V CB =20V , I E =0 0.5 μA Emitter cut-off current I EBO V EB =4V , I C =0 0.1 μA DC current gain

h FE V CE =3V, I C = 100mA 80 400 Collector-emitter saturation voltage V CE(sat) I C = 500m A, I B = 50mA

0.4

V

Transition frequency f T V CE =5V, I E =-50mA 50 MHz

Collector output capacitance

C ob

V CB =10V,I E =0,f =

1MHz 30 pF

2. COLLECTOR A,Jun,2011

Sponge strip

2000 pcs

Sponge strip The top gasket

Label on the Inner Box

Label on the Outer Box

Inner Box: 333 mm ×203mm ×42mm

Outer Box: 493 mm × 400mm × 264mm

QA Label

Seal the box with the tape

Stamp “EMPTY”

on the empty box

The top gasket

Inner Box: 240 mm ×165mm ×９５mm

Label on the Inner Box

Outer Box: 525 mm × 360mm × 262mm

Label on the Outer Box

QA Label

Seal the box with the tape

Stamp “EMPTY” on the empty box