1N4148规格书

®
Dated : 15/09/2007
1N4148
Leakage current versus junction temperature
nA
1N 4148
10 4
5
2
10 3
IR
5
2
10 2
5
2
10
5
2
1 0
VR=20V
100
200 oC
Tj
Admissible repetitive peak forward current versus pulse duration
IR
-
25
IR
-
5
IR
-
50
V(BR)R
100
-
V(BR)R
75
-
Ctot
-
4
Vfr
-
2.5
Reverse Recovery Time from IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100 Ω
Thermal Resistance Junction to Ambient Air
Reverse Breakdown Voltage at IR = 100 µA at IR = 5 µA
Capacitance at VF = VR = 0
Voltage Rise when Switching ON tested with 50 mA Forward Pulses tp = 0.1 s, Rise Time < 30 ns, fp = 5 to 100 KHz
Tamb
Dynamic forward resistance versus forward current
10 4
5
1N 4148
Tj=25 oC f=1KHz
2
10 3
rf
5
2
10 2
5
2
10
5
2
1
10 -2
10 -1
1
10
10 2 mA
IF
Relative capacitance versus reverse voltage
®
Dated : 15/09/2007
5 10 -3 2
5 10 -2 2
I v=tp/T
1N 4148
T=1/fp
IFRM
tp t
T
5 10 -1 2
51
2
5 10 s
tp
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
4
Power Dissipation
Ptot
500 1)
mW
Junction Temperature
Tj
200
OC
Storage Temperature Range
TS
- 65 to + 200
OC
1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature
mW 1000
1N 4148
900 800
Ptot 700 600 500 400 300 200
100
0 0
100
200 oC
trr RthA
-
4
ຫໍສະໝຸດ Baidu
-
0.35 1)
Rectification Efficiency at f = 100 MHz, VRF = 2 V
ηV
0.45
-
1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 15/09/2007
1.1 Ctot(VR) Ctot(0V)
1.0
1N 4148
Tj=25 oC f=1MHz
0.9
0.8
0.7
0
0
2
4
6
8
10 V
VR
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
Glass Case DO-35 Dimensions in mm
Glass Case DO-34 Dimensions in mm
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Symbol
Value
Unit
Peak Reverse Voltage
VRM
Valid provided that leads at a distance of 8 mm from case
A are kept at ambient temperature 100
5 4 3
2
10 IFRM
5 4 3
2
1
5 4 3
2
v=0
0.1 0.2 0.5
0.1 10 -5 2
5 10 -4 2
1N4148
Characteristics at Tj = 25 OC Parameter
Symbol
Min.
Max.
Forward Voltage at IF = 10 mA
VF
-
1
Leakage Current at VR = 20 V at VR = 75 V at VR = 20 V, Tj = 150 OC
®
Dated : 15/09/2007
1N4148
Forward characteristics
mA 10 3
1N 4148
10 2 iF
10
Tj=100o C
Tj=25o C
1
10 -1
10 -2 0
1
2V
VF
Admissible power dissipation versus ambient temperature
100
V
Reverse Voltage
VR
75
V
Average Rectified Forward Current
IF(AV)
200
mA
Non-repetitive Peak Forward Surge Current at t = 1 s
0.5
at t = 1 ms
IFSM
1
A
at t = 1 µs
1N4148
SILICON EPITAXIAL PLANAR DIODE
Fast Switching Diode
This diode is also available in MiniMELF case with the type designation LL4148
Max. 0.5
Max. 1.9
Min. 27.5
Black Cathode Band
Black Part No.
Black "ST" Brand
XXX
ST
Max. 3.9
Min. 27.5
Max. 0.45
Max. 1.9
Min. 27.5
Black Cathode Band
Black Part No.
XXX Max. 2.9
Min. 27.5
Unit V
nA µA µA
V V pF
V
ns K/mW
-
60 VRF =2V
2nF 5K Vo
~~~
Rectification Efficiency Measurement Circuit
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)