半导体双极器件名词解释

1、Abrupt junction approximation （突变结近似）

The assumption that there is an abrupt discontinuity in space charge density between the space charge region and neutral semiconductor region.

认为从中性半导体区到空间电荷区的空间电荷密度有一个突然的不连续。

2、Depletion layer approximation （耗尽层近似）

The number of carriers is almost zero due to the strong built-in electric field in the space charge region, that the charge in the space charge region is almost completely provided ionized impurity, this space charge region is called depletion layer.

由于空间电荷区较强的内建电场，载流子的数量几乎为零，因此可以认为空间电荷区中的电荷几乎完全是由电离杂质所提供的，这种空间电荷区就称为耗尽层。

3、Built-in electric field （内建电场）

An electric field due to the separation of positive and negative space charge densities in the depletion region.

由于耗尽区正负空间电荷相互分离而形成的电场。

4、Built-in potential harrier （内建电势差）

The electrostatic potential difference between the p and n regions of a pn junction in thermal equilibrium.

热平衡状态下pn结内p区与n区的静电电势差。

5、Depletion region/space charge region/barrier region （耗尽区，空间电荷区，势垒区）The region on either side of the metallurgical junction in which there is a net charge density due to ionized donors in the n-region and ionized acceptors in the p region.

冶金结两侧由于n区内施主电离和p区内受主电离而形成的带净正电与负电的区域。详：pn结界面两侧半导体中的载流子由于存在浓度差梯度而互相向对方区域扩散，在pn 结界面附近n区与p区分别留下了不可动的电离施主和电离受主杂质离子，分别带有正负电荷，形成空间电荷区，在该区域中建立有电场，形成电位差，产生相应的势垒，因此pn结空间电荷区又称为pn结势垒区，在势垒区中载流子浓度趋于0，即载流子基本“耗尽”，因此又称为“耗尽层”。

6、Depletion layer capacitance / junction capacitance/barrier capacitance（耗尽层电容，结电容，势垒电容）

The capacitance of the pn junction under reverse bias.

反向偏置下，pn结的电容。

7、Diffusion capacitance （扩散电容）

The capacitance of a forward-biased pn junction due to minority carrier storage effects.

正偏pn结内由于少子的存储效应而形成的电容。

详：对于正偏pn结，当外加偏压增加时，注入n区的空穴增加，在n区的空穴扩散区内形成空穴积累，为保持电中性条件，扩散区内电子浓度也相应增加，电子注入p区情形类似。这种扩散区中的电荷随外加偏压变化而变化所产生的电荷存储效应等效为电容，称为扩散电容。

8、Diffusion conductance （扩散电导）

The ratio of a low-frequency, small-signal sinusoidal current to voltage in a forward-biased pn junction.

正偏pn结的低频小信号正弦电流与电压的比值。

9、Diffusion resistance （扩散电阻）

The inverse of diffusion conductance. The ratio of a low-frequency, small-signal sinusoidal

voltage to current in a forward-biased pn junction.

扩散电导的倒数。正偏pn结的低频小信号正弦电压与电流的比值。

10、Space charge width （空间电荷区宽度）

The width of the space charge region, a function of doping concentrations and applied voltage. 空间电荷区延伸到p区与n区内的距离，它是掺杂浓度与外加电压的函数。

11、Hyperabrupt junction （超突变结）

A pn junction in which the doping concentration on one side decreases away from the metallurgical junction to achieve n specific capacitance-voltage characteristic.

一种为了实现特殊电容—电压特性而进行冶金结处高掺杂的pn结，其特点为pn结一侧的掺杂浓度由冶金结处开始下降。

12、Linearly graded junction （线性缓变结）

A pn junction in which the doping concentrations on either side of the metallurgical junction are approximated by a linear distribution.

冶金结两侧的掺杂浓度可以由线性分布近似的pn结。

13、Metallurgical junction （冶金结）

The interface between the p- and n-doped regions of a pn junction.

pn结内p型掺杂与n型掺杂的分界面。

14、One-sided junction （单边突变结）

A pn junction in which one side of the junction is much more heavily doped than the adjacent/other side.

冶金结一侧的掺杂浓度远大于另一侧的掺杂浓度的pn结。

详：若pn结面两侧为均匀掺杂，即由浓度分别为N_A和N_D的p型半导体和n型半导体组成的pn结，称为突变结。若一边掺杂浓度远大于另一边掺杂浓度，即N_A>>N_D或N_A<

15、Varactor diode （变容二极管）

A diode whose reactance can be varied in a controlled manner with bias voltage.

电容随着外加电压的改变而改变的二极管。

16、Avalanche breakdown （雪崩击穿）

The process whereby a large reverse-bias pn junction current is created due to the generation of electron-hole pairs by the collision of electrons and/or holes with atomic electrons within the space charge region.

电子和（或）空穴穿越空间电荷区时，与空间电荷区内原子的电子发生碰撞产生电子—空穴对，在pn结内形成一股很大的反偏电流，这个过程就称为雪崩击穿。

详：在反向偏置时，势垒区中电场较强。随着反向偏压的增加，势垒区中电场会变得很强，使得电子和空穴在如此强的电场加速作用下具有足够大的动能，以至于它们与势垒区内原子发生碰撞时能把价键上的电子碰撞出来成为导电电子，同时产生一个空穴，新产生的电子、空穴在强电场加速作用下又会与晶格原子碰撞轰击出新的导电电子和空穴……，如此连锁反应好比雪崩一样。这种载流子数迅速增加的现象称为倍增效应。如果电压增加到一定值引起倍增电流趋于无穷大，这种现象叫雪崩击穿。

17、Tunnel breakdown （隧道击穿/齐纳击穿）

Maybe top of the valence band of the p region is higher than the bottom of conduction band of the n region with the reverse bias voltage increases in heavily doped pn junction. The electrons in valence band of the p region can directly reach the conduction band of the n region through the band gap by tunnel effect, to become the carrier in the conduction band. When the reverse