FS10VS-14A中文资料

(Tch = 25°C)
Test conditions ID = 1mA, VGS = 0V IGS = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 700V, VGS = 0V ID = 1mA, VDS = 10V ID = 5A, VGS = 10V ID = 5A, VGS = 10V ID = 5A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz
VDD = 200V, ID = 5A, VGS = 10V, RGEN = RGS = 50Ω IS = 5A, VGS = 0V Channel to case
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 200
POWER DISSIPATION PD (W) DRAIN CURRENT ID (A)
VDS = 10V ID = 1mA
GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V)
4.0
3.0
2.0
1.0
0
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C)
q GATE w DRAIN e SOURCE r DRAIN e
TO-220S
APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc.
MITSUBISHI Nch POWER MOSFET
FS10VS-14A
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 50
DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V)
Limits Min. 700 ±30 — — 2 — — 4.8 — — — — — — — — — Typ. — — — — 3 1.0 5.0 8.0 1380 150 32 25 33 170 55 1.0 — Max. — — ±10 1 4 1.3 6.5 — — — — — — — — 1.5 0.83
ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 5 3 2 100 7 5 3 2 10–1 –50 0 50 100 150
VGS = 10V ID = 1/2ID Pulse Test
THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0
FS10VS-14A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter
VGS = 0V Coss
SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5
Tch = 25°C VDD = 200V VGS = 10V RGEN = RGS = 50Ω
Ciss
SWITCHING TIME (ns)
CAPACITANCE Ciss, Coss, Crss (pF)
100
0
0
0.8
1.6
2.4
3.2
4.0
GATE CHARGE Qg (nC)
SOURCE-DRAIN VOLTAGE VSD (V)
DRA (ON) (25°C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C)
1.6
20V
30
1.2
20
10A
0.8
10
5A
0.4 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A)
0
0
4
8
12
16
20
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS (TYPICAL) 20
Feb.1999
元器件交易网
MITSUBISHI Nch POWER MOSFET
FS10VS-14A
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 40
TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C)
BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4
元器件交易网
MITSUBISHI Nch POWER MOSFET
FS10VS-14A
HIGH-SPEED SWITCHING USE
FS10VS-14A
OUTLINE DRAWING
r
Dimensions in mm 4.5 1.3
1.5MAX. 8.6 ± 0.3 9.8 ± 0.5
TC = 25°C
DRAIN CURRENT ID (A)
16
3 2 100 7 5 3 2
125°C
75°C
12
8
4
0
0
4
8
12
16
20
10–1 –1 10
2 3
5 7 100
2 3
5 7 101
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 104 7 5 3 2 103 7 5 3 2 102 7 5 3 Tch = 25°C 2 f = 1MHZ 101
TC = 25°C Pulse Test
ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 2.0
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω)
TC = 25°C Pulse Test VGS = 10V
40
ID = 20A
3.0 +0.3 –0.5
1.5MAX.
10.5MAX.
0
+0.3 –0
1 5 0.8 0.5
q w e wr
2.6 ± 0.4
q
¡VDSS ................................................................................ 700V ¡rDS (ON) (MAX) ................................................................ 1.3Ω ¡ID ......................................................................................... 10A
3 2
td(off)
102 7 5 3 2 101 0 10 2 3 5 7 101 2 3 5 7 102
tf tr td(on)
Crss
2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN CURRENT ID (A)
Unit V V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W
Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance
TC = 25°C VDS = 50V Pulse Test
FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 101 VDS = 10V 7 Pulse Test 5