IPD15N06S2L-64中文资料

IPD15N06S2L-64
Parameter Symbol Conditions Unit
min.typ.max. Thermal characteristics
Thermal resistance, junction - case R thJC-- 3.2K/W Thermal resistance, junction -
ambient, leaded
R thJA--100
SMD version, device on PCB R thJA minimal footprint--75
6 cm2 cooling area2)--50 Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS V GS=0 V, I D= 1 mA55--V Gate threshold voltage V GS(th)V DS=V GS, I D=14 µA 1.2 1.6 2.0
Zero gate voltage drain current I DSS V DS=55 V, V GS=0 V,
T j=25 °C
-0.011µA
V DS=55 V, V GS=0 V,
T j=125 °C1)
-1100
Gate-source leakage current I GSS V GS=20 V, V DS=0 V-1100nA Drain-source on-state resistance R DS(on)V GS=4.5 V, I D=13 A-6185mΩDrain-source on-state resistance R DS(on)V GS=10 V, I D=13 A -4764mΩ
Values
Parameter Symbol Conditions
Unit
min.
typ.
max.
Dynamic characteristics 1)Input capacitance C iss -354-pF
Output capacitance
C oss -103-Reverse transfer capacitance C rss -38-Turn-on delay time t d(on)-4-ns
Rise time
t r -14-Turn-off delay time t d(off)-21-Fall time
t f
-
12
-
Gate Charge Characteristics 1)Gate to source charge Q gs -1 1.5nC
Gate to drain charge Q gd -45Gate charge total Q g -1113Gate plateau voltage V plateau
-
3.8
-
V
Reverse Diode
Diode continous forward current 1)I S --19A
Diode pulse current
1)
I S,pulse --76Diode forward voltage V SD
V GS =0 V, I F =15 A, T j =25 °C -
0.93
1.3
V
Reverse recovery time 1)t rr V R =30 V, I F =I S , d i F /d t =100 A/µs -34-ns
Reverse recovery charge 1)Q rr V R =30 V, I F =I S , d i F /d t =100 A/µs
-32-nC
1) Defined by design. Not subject to production test.
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.
T C =25 °C
Values V GS =0 V, V DS =25 V, f =1 MHz
V DD =30 V, V GS =10 V, I D =15 A, R G =20 ΩV DD =44 V, I D =19 A, V GS =0 to 10 V
1 Power dissipation
5 Typ. output characteristics
9 Typ. Drain-source on-state resistance
13 Typical avalanche energy
Published by
Infineon Technologies AG
Am Campeon 1-12
D-85579 Neubiberg
© Infineon Technologies AG 1999
All Rights Reserved.
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