HB288192C5中文资料
碳钢焊条简明表及使用说明

碳钢焊条简明表牌号GB标准AWS标准药皮类型焊接电源主要用途J350 DC+ 专用于微碳纯铁氨合成塔内件的焊接。
具有抗高温氢、氮、氨腐蚀能力,也可做要求抗裂而不要求等强度的焊接或过渡层。
J421 E4313 E6013 钛型AC、DC 焊接低碳钢结构,特别适于薄板小件及要求焊缝表面美观和光洁的盖面焊。
J421Fe E4313 E6013 钛型AC、DC 焊接一般低碳钢结构,特别适用于薄板小件及短焊缝的间断焊和要求焊缝表面光洁的盖面焊。
J421Fe16 E4324 E6024 钛型AC、DC 用于一般低碳钢结构的平焊、平角焊。
J421Fe18 E4324 E6024 钛型AC、DC 用于一般低碳钢结构的平焊、平角焊。
J421X E4313 E6013 钛型AC、DC 适用于焊接一般船用碳钢及镀锌钢板,尤其适用于薄板立向下焊及间断焊。
J422 E4303 钛钙型AC、DC 用于焊接较重要的低碳钢结构和强度等级低的低合金钢结构,如Q235、09MnV、09Mn2等。
J422Fe E4303 钛钙型AC、DC 适用于较重要的低碳钢结构的焊接。
J422Fe16 E4323 钛钙型AC、DC 用于较重要的低碳钢结构的焊接。
J422GM E4303 钛钙型AC、DC 适用于海上平台、船舶、车辆、工程机械等结构表面装饰焊缝的焊接。
J423 E4301 钛铁矿型AC、DC 用于焊接较重要的低碳钢结构,如车辆、建筑结构、重型机械结构等的焊接。
J424 E4320 E6020 氧化铁型AC、DC- 可焊接较重要的碳钢结构,如重型机械、建筑机械等。
J425 E4311 纤维素型AC、DC+ 适于薄板结构的对接、角接及搭接焊。
如电站烟道、风道、变压器的油箱、船体和车辆外板的低碳钢结构。
J426 E4316 低氢型AC、DC+ 用于焊接重要的低碳钢和低合金钢的结构,如造船、桥梁、压力容器等。
J427 E4315 低氢型DC+ 用于焊接重要受压载荷或低碳钢厚板结构和低合金钢的结构,如机械、造船、桥梁、压力容器等。
HB288128C5资料

2
HB288256/192/160/128/096/064/032C5
Card Pin Assignment
Memory card mode Pin No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 Signal name GND D3 D4 D5 D6 D7 -CE1 A10 -OE A9 A8 A7 VCC A6 A5 A4 A3 A2 A1 A0 D0 D1 D2 WP -CD2 -CD1 D11 D12 D13 D14 I/O — I/O I/O I/O I/O I/O I I I I I I — I I I I I I I I/O I/O I/O O O O I/O I/O I/O I/O I/O card mode Signal name GND D3 D4 D5 D6 D7 -CE1 A10 -OE A9 A8 A7 VCC A6 A5 A4 A3 A2 A1 A0 D0 D1 D2 -IOIS16 -CD2 -CD1 D11 D12 D13 D14 I/O — I/O I/O I/O I/O I/O I I I I I I — I I I I I I I I/O I/O I/O O O O I/O I/O I/O I/O True IDE mode Signal name GND D3 D4 D5 D6 D7 -CE1 A10 -ATASEL A9 A8 A7 VCC A6 A5 A4 A3 A2 A1 A0 D0 D1 D2 -IOIS16 -CD2 -CD1 D11 D12 D13 D14 I/O — I/O I/O I/O I/O I/O I I I I I I — I I I I I I I I/O I/O I/O O O O I/O I/O I/O I/O
D2887 Boiling Point Calibration Mix C5-C44, Part N

D2887 Boiling Point Calibration Mix C5-C44, Part Number G3440-85037*************(24小时)化学品安全技术说明书GHS product identifier 应急咨询电话(带值班时间)::供应商/ 制造商:安捷伦科技贸易(上海)有限公司中国(上海)外高桥自由贸易试验区英伦路412号(邮编:200131)电话号码: 800-820-3278传真号码: 0086 (21) 5048 2818D2887 Boiling Point Calibration Mix C5-C44, Part Number G3440-85037化学品的推荐用途和限制用途G3440-85037部件号:安全技术说明书根据 GB/ T 16483-2008 和 GB/ T 17519-2013GHS化学品标识:D2887 沸点校正混合物 C5-C44,部件号 G3440-85037推荐用途供分析化学实验室使用的试剂和标准5 x 1 ml (2 ml 安瓿):有关环境保护措施,请参阅第 12 节。
物质或混合物的分类根据 GB13690-2009 和 GB30000-2013紧急情况概述液体。
无色。
轻汽油 [轻微]如接触到或有疑虑: 求医要么就诊。
如误吸入: 如感觉不适,呼叫解毒中心或医生。
如误吞咽:立即呼叫解毒中心/医生。
如发生皮肤刺激: 求医要么就诊。
如仍觉眼刺激: 求医要么就诊。
H226 - 易燃液体和蒸气。
H304 - 吞咽及进入呼吸道可能致命。
H315 - 造成皮肤刺激。
H319 - 造成严重眼刺激。
H335 - 可能造成呼吸道刺激。
H336 - 可能造成昏昏欲睡或眩晕。
H361 - 怀疑对生育能力或胎儿造成伤害。
H373 - 长期或反复接触可能损害器官。
H400 - 对水生生物毒性极大。
H410 - 对水生生物毒性极大并具有长期持续影响。
中英文耐火材料国家标准 列表

中英文耐火材料国家标准1 GB/T 2275-1987 镁砖及镁硅砖Magnesia and magnesia-silica refractory bricks2 GB/T 2608-1987 硅砖Silica refractory bricks3 GB/T 2988-1987 高铝砖High-alumina refractory bricks4 GB/T 2997-1982 致密定形耐火制品显气孔率、吸水率、体积密度和真气孔率试验方法Test method for the apparent porosity, water absorption bulk density and true porosity of dense shaped refractory products5 GB/T 2998-1982 定形隔热耐火制品体积密度和真气孔率试验方法Test method for bulk density and true porosity of shaped insulating refractory products6 GB/T 2999-1982 粒状耐火材料体积密度试验方法Test method for the bulk density of granular refractory materials7 GB/T 3000-1982 耐火制品透气度试验方法Test method for permeability of refractory products8 GB/T 3001-1982 耐火制品常温抗折强度试验方法Test method for modulus of rupture of refractory products at room temperatures9 GB/T 3002-1982 耐火制品高温抗折强度试验方法Test method for modulus of rupture of refractory products at elevated temperatures10 GB/T 3003-1982 普通硅酸铝耐火纤维毡Ordinary alumino-silicate refractory fiber felts11 GB/T 3004-1982 普通硅酸铝耐火纤维毡容重试验方法Test method for bulk density of ordinary alumino-silicate refractory fiber felts12 GB/T 3005-1982 普通硅酸铝耐火纤维毡加热线收缩试验方法Test method for heating linear shrinkage of ordinary alumino-silicate refractory fiber felts13 GB/T 3006-1982 普通硅酸铝耐火纤维毡渣球含量试验方法Test method for the content of slag ball of ordinary alumino-silicate refractory fiber felts14 GB/T 3007-1982 普通硅酸铝耐火纤维毡含水量试验方法Test method for moisture content of ordinary alumino-silicate refractory fiber felts15 GB/T 3008-1982 普通硅酸铝耐火纤维毡检验制样规定Rule for preparing samples of ordinary alumino-silicate refractory fiber felts16 GB/T 3994-1983 粘土质隔热耐火砖Shaped insulating refractory products--Fireclay bricks17 GB/T 3995-1983 高铝质隔热耐火砖Shaped insulating refractory products--High alumina bricks18 GB/T 3996-1983 硅藻土隔热制品Shaped thermal insulating products--Diatomite bricks and shapes19 GB/T 4513-1984 不定型耐火材料(致密和隔热) 分类Prepared unshaped refractory materials (dense and insulating)--Classification20 GB/T 4984-1985 锆刚玉耐火材料化学分析方法Chemical analysis methods of zirconia-alumina refractories21 GB/T 5069.1-1985 镁质耐火材料化学分析方法重量法测定灼烧失量Magnesite refractories--Determination of loss content on ignition--Gravimetric method22 GB/T 5069.2-1985 镁质耐火材料化学分析方法钼蓝光度法测定二氧化硅量Magnesite refractories--Determination of silicon dioxide content--Molybdenum blue photometric method23 GB/T 5069.3-1985 镁质耐火材料化学分析方法重量-钼蓝光度法测定二氧化硅量Magnesite refractories--Determination of silicon dioxide content--Gravimetric -molybdenum blue photometric method24 GB/T 5069.4-1985 镁质耐火材料化学分析方法邻二氮杂菲光度法测定三氧化二铁量Magnesite refractories--Determination of iron oxide content--O-Phenanthroline photometric method25 GB/T 5069.5-1985 镁质耐火材料化学分析方法铬天青S 光度法测定氧化铝量Magnesite refractories--Determination of aluminium oxide content--Chromazurol S photometric method26 GB/T 5069.6-1985 镁质耐火材料化学分析方法EDTA容量法测定氧化铝量Magnesite refractories--Determination of aluminium oxide--EDTA volumetric method 27 GB/T 5069.7-1985 镁质耐火材料化学分析方法二安替比林甲烷光度法测定二氧化钛量Magnesite refractories--Determination of titanium dioxide content--Diantipyrylmethane photometric method28 GB/T 5069.8-1985 镁质耐火材料化学分析方法EDTA容量法测定氧化钙量Magnesite refractories--Determination of calcium oxide content--EGTA volumetric method29 GB/T 5069.9-1985 镁质耐火材料化学分析方法CyDTA容量法测定氧化镁量Magnesite refractories--Determination of magnesium oxide content--CyDTA volumetric method30 GB/T 5069.10-1985 镁质耐火材料化学分析方法原子吸收分光光度法测定氧化锰量Magnesite refractories--Determination of manganese oxide content--Atomic absorption spectrophotometric method31 GB/T 5069.11-1985 镁质耐火材料化学分析方法原子吸收分光光度法测定氧化钾、氧化钠量Magnesite refractories--Determination of potassium oxide andsodium oxide contents--atomic absorption spectrophotometric method32 GB/T 5070.1-1985 镁铬质耐火材料化学分析方法重量法测定灼烧失量Magnesite-chrome refractories--Determination of loss content on ignition--Gravimetric method33 GB/T 5070.2-1985 镁铬质耐火材料化学分析方法钼蓝光度法测定二氧化硅量Magnesite-chrome refractories--Determination of silicon dioxide content--Molybdenum blue phetometric method34 GB/T 5070.3-1985 镁铬质耐火材料化学分析方法邻二氮杂菲光度法测定三氧化二铁量Magnesite-chrome refractories--Determination of iron oxide content--O-Phenanthroline photometric method35 GB/T 5070.4-1985 镁铬质耐火材料化学分析方法EDTA容量法测定氧化铝量Magnesite-chrome refractories--Determination of aluminium oxide--EDTA volumetric method36 GB/T 5070.5-1985 镁铬质耐火材料化学分析方法二安替比林甲烷光度法测定二氧化钛量Magnesite-chrome refractories--Determination of titanium dioxide content--Diantipyrylmethane photometric method37 GB/T 5070.6-1985 镁铬质耐火材料化学分析方法EGTA容量法测定氧化钙量Magnesite-chrome refractories--Determination of calcium oxide content--EGTA volumetric method38 GB/T 5070.7-1985 镁铬质耐火材料化学分析方法CyDTA容量法测定氧化镁量Magnesite-chrome refractories--Determination of magnesium oxide content--CyDTA volumetric method39 GB/T 5070.8-1985 镁铬质耐火材料化学分析方法硫酸亚铁铵容量法测定三氧化二铬量Magnesite-chrome refractories--Determination of chromium oxide content--Ammonium ferrous sulfate volumetric method40 GB/T 5070.9-1985 镁铬质耐火材料化学分析方法原子吸收分光光度法测定氧化锰量Magnesite-chrome refractories--Determination of manganese oxide content--Atomic absorption spectrophotometric method41 GB/T 5070.10-1985 镁铬质耐火材料化学分析方法原子吸收分光光度法测定氧化钾、氧化钠量Magnesite-chrome refractories--Determination of potassium oxide and sodium oxide contents--Atomic absorption spectrophotometric method42 GB/T 5073-1985 耐火制品压蠕变试验方法Test method for creep in compression of refractory products43 GB/T 5988-1986 致密定形耐火制品重烧线变化试验方法Dense shaped refractory products--Test method of linear changes on reheating44 GB/T 5990-1986 定形隔热耐火制品导热系数试验方法(热线法) Shaped insulating refractory products--Test method of the thermal conductivity (hot wire method)45 GB/T 6900.1-1986 粘土、高铝质耐火材料化学分析方法重量法测定灼烧减量Fireclay and high-alumina refractories--Determination of loss content on ignition--Gravimetric method46 GB/T 6900.2-1986 粘土、高铝质耐火材料化学分析方法重量-钼蓝光度法测定二氧化硅量Fireclay and high-alumina refractories--Determination of silicon dioxide content--Gravimetric-molybdenum blue photometric method47 GB/T 6900.3-1986 粘土、高铝质耐火材料化学分析方法邻二氮杂菲光度法测定三氧化二铁量Fireclay and high-alumina refractories--Determination of iron oxide content--o-Phenanthroline photometric method48 GB/T 6900.4-1986 粘土、高铝质耐火材料化学分析方法EDTA容量法测定氧化铝量Fireclay and high-alumina refractories--Determination of aluminium oxide content--EDTA volumetric method49 GB/T 6900.5-1986 粘土、高铝质耐火材料化学分析方法过氧化氢光度法测定二氧化钛量Fireclay and high-alumina refractories--Determination of titanium dioxide content--Hydrogen peroxide photometric method50 GB/T 6900.6-1986 粘土、高铝质耐火材料化学分析方法EDTA容量法测定氧化钙量Fireclay and high-alumina refractories--Determination of calcium oxide content--EDTA volumetric method51 GB/T 6900.7-1986 粘土、高铝质耐火材料化学分析方法二甲苯胺蓝I-溴化十六烷基三甲铵光度法测定氧化镁量Fireclay and high-alumina refractories--Determination of magnesium oxide content--Xylidyl blue I-CTAB photo-metric method52 GB/T 6900.8-1986 粘土、高铝质耐火材料化学分析方法原子吸收分光光度法测定氧化钙、氧化镁量Fireclay and high-alumina refractories--Determination of calcium oxide and magnesium oxide content--Atomic absorpion spectrophotometric method53 GB/T 6900.9-1986 粘土、高铝质耐火材料化学分析方法原子吸收分光光度法测定氧化钾、氧化钠量Fireclay and high-alumina refractories--Determination of potassium oxide and sodium oxide content--Atomic absorption spectrophotometric method54 GB/T 6900.10-1986 粘土、高铝质耐火材料化学分析方法过硫酸铵光度法测定氧化锰量Fireclay and high-alumina refractories--Determination of manganeseoxide content--Ammonium persulfate photometric method55 GB/T 6900.11-1986 粘土、高铝质耐火材料化学分析方法钼蓝光度法测定五氧化二磷量Fireclay and high-alumina refractories--Determination of phosphorus pentoxide content--Molybdenum blue photometric method56 GB/T 6901.1-1986 硅质耐火材料化学分析方法重量法测定灼烧减量Silica refractories--Determination of loss content on ignition--Gravimetric method57 GB/T 6901.2-1986 硅质耐火材料化学分析方法重量-钼蓝光度法测定二氧化硅量Silica refractories--Determination of silicon dioxide content--Gravimetric-molybdenum blue photometric method58 GB/T 6901.3-1986 硅质耐火材料化学分析方法氢氟酸重量法测定二氧化硅量Silica refractories--Determination of silicon dioxide content--Hydrofluoric acid gravimetric method59 GB/T 6901.4-1986 硅质耐火材料化学分析方法邻二氮杂菲光度法测定三氧化二铁量Silica refractories--Determination of iron oxide content--o-Phenanthroline photometric method60 GB/T 6901.5-1986 硅质耐火材料化学分析方法铬天青S 光度法测定氧化铝量Silica refractories--Determination of aluminium oxide content--Chromazurol S photometric method61 GB/T 6901.6-1986 硅质耐火材料化学分析方法EDTA容量法测定氧化铝量Silica refractories--Determination of aluminium oxide content--EDTA volumetric method62 GB/T 6901.7-1986 硅质耐火材料化学分析方法二安替比林甲烷光度法测定二氧化钛量Silica refractories--Determination of titanium dioxide content--Diantipyrglmethane photometric method63 GB/T 6901.8-1986 硅质耐火材料化学分析方法原子吸收分光光度法测定氧化钙、氧化镁量Silica refractories--Determination of calcium oxide content and magnesium oxide--Atomic absorption spectrophotometric method64 GB/T 6901.9-1986 硅质耐火材料化学分析方法原子吸收分光光度法测定氧化钾、氧化钠量Silica refractories--Determination of potassium oxide and sodium oxide content--Atomic absorption spetrophotometric method65 GB/T 6901.10-1986 硅质耐火材料化学分析方法原子吸收分光光度法测定氧化锰量silica refractories--Determination of manganese oxide content--Atomic absorption spectrophotometric method66 GB/T 6901.11-1986 硅质耐火材料化学分析方法钼蓝光度法测定五氧化二磷量Silica refractories--Determination of phosphorus pentoxide content--Molybdenumblue photometric method67 GB/T 7320-1987 耐火制品热膨胀试验方法Test method for thermal expansion of refractory products68 GB/T 7321-1987 致密定形耐火制品试验的制样规定Rule of preparing sample for tests of dense shaped refractory products69 GB/T 8931-1988 耐火材料抗渣性试验方法Test method for the resistance of refractories to slag attack70 GB/T 10324-1988 耐火制品的分型定义Refractory products--Definitions of model71 GB/T 10325-1988 耐火制品堆放、取样、验收、保管和运输规则Refractory products--Instructions on stacking, sampling, acceptance, storage and transporting72 GB/T 10326-1988 耐火制品尺寸、外观及断面的检查方法Refractory products--Inspections of dimension, appearance and section73 GB/T 13243-1991 含碳耐火材料高温抗折强度试验方法Test method for modulus of rupture of refractories containing carbon at elevated temperatures74 GB/T 13244-1991 含碳耐火材料抗氧化性试验方法Test method for oxidation resistance of refactories containing carbon75 GB/T 13245-1991 含碳耐火材料化学分析方法燃烧重量法测定总碳量Chemical analysis method of refractories containing carbon—Determination of the total carbon—Combustion gravimetric method76 GB/T 13246-1991 含碳耐火材料化学分析方法CyDTA 容量法测定氧化镁量Refractories containing carbon—Determination of magnesium oxide content—CyDTA volumetric method77 GB/T 13794-1992 实验室用标准测温锥Pyrometric reference cones for laboratory use78 GB/T 14350-1993 锆英石耐火材料化学分析方法Chemical analysis methods for zircon refractories79 GB/T 14351-1993 熔铸氧化铝耐火材料化学分析方法Chemical analysis methods for fuse cast alumina refractories80 GB/T 14982-1994 粘土质耐火泥浆Fireclay refractory mortars81 GB/T 14983-1994 耐火材料抗碱性试验方法Test method for alkali-resistance of refractories82 GB/T 15545-1995 不定形耐火材料包装、标志、运输和储存Unshaped refractory--Packing, marking, transportation and storage83 GB/T 16546-1996 定形耐火制品包装、标志、运输和储存Shaped refractoryproducts--Packing, marking, transportation and storage84 GB/T 16555.1-1996 碳化硅耐火材料化学分析方法吸收重量法测定碳化硅量Chemical analysis for silicon carbide refractories--Determination of silicon carbide--Absorb gravimetric method85 GB/T 16555.2-1996 碳化硅耐火材料化学分析方法气体容量法测定碳化硅量Chemical analysis for silicon carbide refractories--Determination of silicon carbide--Gas volumetric method86 GB/T 16555.3-1996 碳化硅耐火材料化学分析方法气体容量法测定游离硅量Chemical analysis for silicon carbide refractories--Determination of free silicon--Gas volumetric method87 GB/T 16555.4-1996 碳化硅耐火材料化学分析方法EDTA容量法测定三氧化二铝量Chemical analysis for silicon carbide refractories--Determination of alumina--EDTA gas volumetric method88 GB/T 16555.5-1996 碳化硅耐火材料化学分析方法邻二氮杂菲光度法测定三氧化二铁量Chemical analysis for silicon carbide refractories--Determination of ferric oxide--0-phenanthroline photometric method89 GB/T 16555.6-1996 碳化硅耐火材料化学分析方法测定二氧化硅量Chemical analysis for silicon carbide refractories--Determination of silicon dioxide 90 GB/T 16763-1997 定形隔热耐火制品的分类Shaped insulating refractory products-classification91 GB/T 5071-1997 耐火材料真密度试验方法Refractory materials-Determination of true density92 GB/T 7322-1997 耐火材料耐火度试验方法Test method for pyrometric cone equivalent(refractoriness) of refractories93 GB/T 17105-1997 致密定形耐火制品分类Classification of dense shaped refractory products94 GB/T 17106-1997 耐火材料导热系数试验方法(平行热线法) Refractory materials--Determination of thermal conductivity--Hot-wire method(parallel)95 GB/T 2273-1998 烧结镁砂Sintered magnesia96 GB/T 17601-1998 致密定形耐火制品耐硫酸侵蚀性试验方法Dense shaped refractory products--Determination of resistance to sulfuric acid97 GB/T 5072.1-1998 致密定形耐火制品常温耐压强度试验方法(无衬垫仲裁试验) Dense, shaped refractory products--Determination of cold compressive strength--Part 1: Referee test without packing98 GB/T 2992-1998 通用耐火砖形状尺寸Dimensions of general bricks99 GB/T 17617-1998 耐火原料和不定形耐火材料取样Refractory products--Sampling of raw materials and unshaped products100 GB/T 3997.1-1998 定形隔热耐火制品重烧线变化试验方法Shaped insulating refractory products--Determination of permanent Change in dimension on heating 101 GB/T 3997.2-1998 定形隔热耐火制品常温耐压强度试验方法Shaped insulating refractory products--Determination of cold crushing strength102 GB/T 5989-1998 耐火制品荷重软化温度试验方法(示差--升温法) Refractory products--Determination of Refractoriness-under-load(differential-with rising temperature)103 GB/T 17732-1999 致密定形含炭耐火制品试验方法Dense, shaped refractory products--Test methods for products containing carbon。
汽车结构用热连轧钢板及钢带的标准

宝钢汽车结构用热连轧钢板及钢带标准1.范围本标准规定了汽车结构用热连轧钢板及钢带的尺寸、外形、技术要求、试验方法、检验规则、包装、标志及质量证明书等。
本标准适用于上海宝钢集团公司热轧部生产的、具有良好冷成型性能的碳素及微合金钢热连轧钢板及钢带,产品供制造汽车大梁、横梁、滚型车轮、汽车传动轴管等结构用。
2.引用标准下列标准包含的条文,通过在本标准中引用而构成为本标准的条文。
本标准发布时,所示版本均为有效。
所有标准都会被修订,使用本标准的各方应探讨使用下列标准最新版本的可能性。
3 分类及牌号3.1钢板及钢带按用途、产品类别区分如表1所示。
表1 (续)表1(完)2.按边缘状态分为切边 EC不切边 EM3.尺寸、外形、重量及允许偏差4.1 B330CL、B380CL、B420CL的厚度允许偏差应符合Q/BQB301较高精度(PT.B)规定。
4.2 B440QZR 、B480QZR的厚度允许偏差应符合表2 的规定。
3.其它尺寸外形重量及其允许偏差按Q/BQB301的规定。
表2 mm3.订货所需信息5.1 订货时用户须提供下列信息:a.本企业标准号;b)牌号;c)产品类别(按3.1)d)规格及尺寸(厚度)精度级别;e)边缘状态(按3.2)。
如在订货合同中未说明边缘状态和尺寸(厚度)精度,除本标准特别规定外,按本标准供货的钢带以Q/BQB301中普通厚度精度不切边状态交货,按本标准供货的钢板以Q/BQB301中普通厚度精度切边状态交货。
2.标记示例按Q/BQB310-1999交货的牌号SAPH400,厚度3.0mm,PT.A级精度,宽度1500mm,长度5000mm,切边(EC)的钢板,其标记为:Q/BQB310-1999,SAPH400热轧钢板,3.0PT.A×1500(EC)×5000Q/BQB 310-19993.技术要求1.牌号及化学成分6.1.1 钢的牌号及化学成分(熔炼分析)应符合表3的规定。
羰基二咪唑 企业标准

羰基二咪唑企业标准
1.范围
本标准规定了羰基二咪唑的分类、标记、技术要求、试验方法、检验规则等要求。
本标准适用于以咪唑和光气为原料生产的羰基二咪唑。
2.规范性引用文件
下列文件对于本文件的应用是必不可少的。
凡是注日期的引用文件,仅注日期的版本适用于本文件。
凡是不注日期的引用文件,其最新版本(包括所有的修改单)适用于本文件。
GB/T191包装储运图示标志
3.术语和定义
下列术语和定义适用于本文件。
羰基二咪唑:以咪唑和光气为原料反应得到的化合物,分子式为C6H6N4O。
4.羰基二咪唑的分类和标记
羰基二咪唑按照纯度可分为一级品和二级品。
产品应在其包装上标明级别、批号及净重。
5.技术要求
羰基二咪唑应符合下列要求:
a)外观:应为白色至淡黄色结晶性粉末;
b)纯度:一级品不低于98.0%,二级品不低于95.0%;
c)水份:不大于0.5%;
d)熔点:不低于140℃。
6.试验方法
6.1外观:采用目视法检测,产品应无明显色差,无异物。
6.2纯度:按照GB/T6324.2的规定进行测定。
一级品应不低于98.0%,二级品应不低于95.0%。
6.3水份:按照GB/T6324.1的规定进行测定,产品应不大于0.5%。
6.4熔点:按照GB/T617的规定进行测定,产品应不低于140℃。
7.检验规则
7.1出厂检验:每批产品均应进行外观、纯度、水份、熔点的检验,并出具检验报告。
7.2型式检验:当原料、工艺有较大变化或每隔一年时,应进行型式检验,以确定产品是否符合本标准要求。
五金检验知识培训-9-18教学教材

• 0.5不锈钢板Ocr17Ni7AL -GB3280-92.不锈 钢冷轧钢板、装机弹簧片.
• 3.0防锈铝LF21-GB3194-82防锈铝、散热 片、指针.
检验方法及常见品质缺陷
• 螺母:(分类为:四方螺母、六角螺母、法 兰螺母)
• 表面处理颜色与样板不符. • 厚度不符尺寸要求. • 边沿有明显刮手之毛刺. • 漏攻螺牙 • 螺牙不良.
检验方法及常见品质缺陷
• 介子: (分类为:平介/平垫圈.C形介/弹簧垫 圈.梅花形介/齿形垫圈.E形介/扣介)
常用测量工具及设备
• 游标卡尺: 长度、厚度、内外径、深度、台阶. • 外径千分尺: 圆形制件外径、厚度. • 高度尺: 高度.用于划线. • 螺纹塞规: 螺纹规格. • 投影仪: 长度、角度、轮廓、外形和表面形状. • 三次元: 几乎能完成所有几何测量任务、平面距离.
角度、形状误差、位置误差、相交.对称.投影. • 厚薄规: 测量缝隙间距离. • 针规: 测量孔径、孔距、内螺纹小径测量. • 硬度计:材料硬度.
常用五金材料
• 钢板:SPCC--冷轧钢板;SECC--电镀锌钢板; SPTE--电镀锡钢板.
• 常 用 的 板 料 为 : SECC-- 电 镀 锌 钢 板 10-B-0.8/ DX2-0.6-42/42-B-N -GBT15675-1995 .
• 特性:防锈.耐指纹处理.其中0.8及0.6指钢板的厚 度MM .
检验方法及常见品质缺陷
• 冲压件 : • 内孔与外形位置偏移。 • 弯曲角有裂缝。 • 制件端面鼓起或不平(边沿有翘曲现) • 弯曲引起孔变形。 • 弯曲后两孔轴心错移。 • 弯曲线与两孔中心连线不平行。 • 角度折弯不良:角度偏大或偏小。 • 凸圆边沿起皱或顶部破裂
批准黑龙江省分析测试中心计量认证的产品参数

批准黑龙江省分析测试中心计量认证的产品参数Prepared on 21 November 2021批准黑龙江省分析测试中心计量认证的产品(参数)证书号:()量认(黑)字()号有效期:200 年月日~200 年月日共 8页第1页批准黑龙江省分析测试中心计量认证的产品(参数)证书号:()量认(黑)字()号有效期:200 年月日~200 年月日共 8页第2页证书号:()量认(黑)字()号有效期:200 年月日~200 年月日共8 页第3页证书号:()量认(黑)字()号有效期:200 年月日~200 年月日共 8页第4页证书号:()量认(黑)字()号有效期:200 年月日~200 年月日共8页第5页批准黑龙江省分析测试中心计量认证的产品(参数)证书号:()量认(黑)字()号有效期:200 年月日~200 年月日共8页第6页证书号:()量认(黑)字()号有效期:200 年月日~200 年月日共8页第7页批准黑龙江省分析测试中心计量认证的产品(参数)证书号:()量认(黑)字()号有效期:200 年月日~200 年月日共8页第8页批准黑龙江省分析测试中心计量认证的产品(参数)证书号:()量认(黑)字()号有效期:200 年月日~200 年月日共11 页第 1 页批准黑龙江省分析测试中心计量认证的产品(参数)11 页第 2 页批准黑龙江省分析测试中心计量认证的产品(参数)11 页第 3页批准黑龙江省分析测试中心计量认证的产品(参数)11页第 4 页批准黑龙江省分析测试中心计量认证的产品(参数)11 页第 5 页批准黑龙江省分析测试中心计量认证的产品(参数)11页第 6 页批准黑龙江省分析测试中心计量认证的产品(参数)11页第 7页批准黑龙江省分析测试中心计量认证的产品(参数)11页第 8 页批准黑龙江省分析测试中心计量认证的产品(参数)11页第 9 页批准黑龙江省分析测试中心计量认证的产品(参数)11页第 10 页批准黑龙江省分析测试中心计量认证的产品(参数)11页第 11 页。
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HB288256C5/HB288192C5HB288160C5/HB288128C5HB288096C5/HB288064C5HB288032C5CompactFlash™256 MByte/192 MByte/160 MByte/128 MByte96 MByte/64 MByte/32 MByteADE-203-951D (Z)Rev. 3.0Oct. 23 2000 DescriptionHB288256C5, HB288192C5, HB288160C5, HB288128C5, HB288096C5, HB288064C5, HB288032C5 are CompactFlash™. This card complies with CompactFlash™ specification, and is suitable for the usage of data storage memory medium for PC or any other electric equipment and digital still camera. This card is equipped with Hitachi 256 Mega bit Flash memory. This card is suitable for ISA (Industry Standard Architecture) bus interface standard, and read/write unit is 1 sector (512 bytes) sequential access. By using this card it is possible to operate good performance for the system which have CompactFlash TM slots.Note: CompactFlash™ is a trademark of SanDisk Corporation and is licensed royalty-free to the CFA which in turn will license it royalty-free to CFA members.*CFA: CompactFlash™ Association.Features• CompactFlash™ specification standard50 pin two pieces connector and Type I (3.3 mm)• 3.3V / 5V single power supply operation• Card density is 256 Mega bytes maximumThis card is equipped with Hitachi 256 Mega bit Flash memoryHB288256/192/160/128/096/064/032C52• 3 variations of mode access Memory card mode I/O card mode True IDE mode• Internal self-diagnostic program operates at V CC power on• High reliability based on internal ECC (Error Correcting Code) function • Data write is 300,000 cycles• Data reliability is 1 error in 1014 bits read • Auto sleep modeCard Line Up *1Type No.Card density Capacity *4Total sectors/card *3Sectors/track *2Number ofhead Number of cylinder HB288256C5256 MB 256,204,800 byte 500,4004815695HB288192C5192 MB 192,184,320 byte 375,3603215782HB288160C5160 MB 160,235,520 byte 312,9603210978HB288128C5128 MB 128,188,416 byte 250,368328978HB288096C596 MB 95,944,704 byte 187,392328732HB288064C564 MB 64,094,208 byte 125,184324978HB288032C532 MB32,047,104 byte62,592324489Notes: 1.These data are written in ID.2.Total tracks = number of head × number of cylinder.3.Total sectors/card = sectors/track × number of head × number of cylinder.4.It is the logical address capacity including the area which is used for file system.HB288256/192/160/128/096/064/032C5 Card Pin AssignmentMemory card mode I/O card mode True IDE modePin No.Signal name I/O Signal name I/O Signal name I/O1GND—GND—GND—2D3I/O D3I/O D3I/O3D4I/O D4I/O D4I/O4D5I/O D5I/O D5I/O5D6I/O D6I/O D6I/O6D7I/O D7I/O D7I/O7-CE1I-CE1I-CE1I8A10I A10I A10I9-OE I-OE I-ATASEL I10A9I A9I A9I11A8I A8I A8I12A7I A7I A7I13VCC—VCC—VCC—14A6I A6I A6I15A5I A5I A5I16A4I A4I A4I17A3I A3I A3I18A2I A2I A2I19A1I A1I A1I20A0I A0I A0I21D0I/O D0I/O D0I/O22D1I/O D1I/O D1I/O23D2I/O D2I/O D2I/O24WP O-IOIS16O-IOIS16O25-CD2O-CD2O-CD2O26-CD1O-CD1O-CD1O27D11I/O D11I/O D11I/O28D12I/O D12I/O D12I/O29D13I/O D13I/O D13I/O30D14I/O D14I/O D14I/O3HB288256/192/160/128/096/064/032C54Memory card mode I/O card mode True IDE modePin No.Signal name I/O Signal name I/O Signal name I/O 31D15I/O D15I/O D15I/O 32-CE2I-CE2I-CE2I 33-VS1O-VS1O-VS1O 34-IORD I-IORD I-IORD I 35-IOWR I-IOWR I-IOWR I 36-WE I-WE I-WE I 37RDY/-BSY O-IREQ O INTRQ O 38VCC—VCC—VCC—39-CSEL I-CSEL I-CSEL I 40-VS2O-VS2O-VS2O 41RESET I RESET I-RESET I 42-WAIT O-WAIT O IORDY O 43-INPACK O-INPACK O-INPACK O 44-REG I-REG I-REG I 45BVD2I/O-SPKR I/O-DASP I/O 46BVD1I/O-STSCHG I/O-PDIAG I/O 47D8I/O D8I/O D8I/O 48D9I/O D9I/O D9I/O 49D10I/O D10I/O D10I/O 50GND—GND—GND—HB288256/192/160/128/096/064/032C55Card Pin ExplanationSignal nameDirection Pin No.DescriptionA10 to A0(PC Card Memory mode)I 8, 10, 11, 12, 14,15, 16, 17, 18,19, 20Address bus is A10 to A0. A10 is MSB and A0 is LSB.A10 to A0(PC Card I/O mode)A2 to A0(True IDE mode)18, 19, 20Address bus is A10 to A0. Only A2 to A0 are used,A10 to A3 should be grounded by the host.BVD1(PC Card Memory mode)I/O 46BVD1 outputs the battery voltage status in the card.This output line is constantly driven to a high state since a battery is not required for this product.-STSCHG(PC Card I/O mode)-STSCHG is used for changing the status ofConfiguration and status register in attribute area.-PDIAG(True IDE mode)-PDIAG is the Pass Diagnostic signal in Master/Slave handshake protocol.BVD2(PC Card Memory mode)I/O 45BVD2 outputs the battery voltage status in the card.This output line is constantly driven to a high state since a battery is not required for this product.-SPKR(PC Card I/O mode)-SPKR outputs speaker signals. This output line is constantly driven to a high state since this product does not support the audio function.-DASP(True IDE mode)-DASP is the Disk Active/Slave Present signal in the Master/Slave handshake protocol.-CD1, -CD2(PC Card Memory mode)O 26, 25-CD1 and -CD2 are the card detection signals. -CD1and -CD2 are connected to ground in this card, so host can detect that the card is inserted or not.-CD1, -CD2(PC Card I/O mode)-CD1, -CD2(True IDE mode)-CE1, -CE2(PC Card Memory mode)Card Enable I 7, 32-CE1 and -CE2 are low active card select signals.Byte/Word/Odd byte mode are defined by combination of -CE1, -CE2 and A0.-CE1, -CE2(PC Card I/O mode)Card Enable -CE1, -CE2(True IDE mode)-CE2 is used for select the Alternate Status Register and the Device Control Register while -CE1 is the chip select for the other task file registers.HB288256/192/160/128/096/064/032C56Signal nameDirection Pin No.Description-CSEL (PC Card Memory mode)I 39This signal is not used.-CSEL(PC Card I/O mode)-CSEL(True IDE mode)This signal is used to configure this device as a Master or a Slave when configured in the True IDE mode. When this pin is grounded, this device is configured as a Master. When the pin is open, this device is configured as a Slave.D15 to D0(PC Card Memory mode)I/O 31, 30, 29, 28,27, 49, 48, 47, 6,5, 4, 3, 2, 23, 22,21Data bus is D15 to D0. D0 is the LSB of the even byte of the word. D8 is the LSB of the odd byte of the word.D15 to D0(PC Card I/O mode)D15 to D0(True IDE mode)GND (PC Card Memory mode)—1, 50GroundGND(PC Card I/O mode)GND(True IDE mode)-INPACK (PC Card Memory mode)O 43This signal is not used and should not be connected at the host.-INPACK(PC Card I/O mode)Input AcknowledgeThis signal is asserted low by this card when the card is selected and responding to an I/O read cycle at the address that is on the address bus during -CE and -IORD are low. This signal is used for the input data buffer control.-INPACK(True IDE mode)This signal is not used and should not be connected at the host.-IORD (PC Card Memory mode)I 34This signal is not used.-IORD(PC Card I/O mode)-IORD is used for control of read data in I/O task file area. This card does not respond to -IORD until I/O card interface setting up.-IORD(True IDE mode)-IORD is used for control of read data in I/O task file area. This card does not respond to -IORD until True IDE interface setting up.HB288256/192/160/128/096/064/032C57Signal nameDirection Pin No.Description-IOWR (PC Card Memory mode)I 35This signal is not used.-IOWR(PC Card I/O mode)-IOWR is used for control of data write in I/O task file area. This card does not respond to -IOWR until I/O card interface setting up.-IOWR(True IDE mode)-IOWR is used for control of data write in I/O task file area. This card does not respond to -IOWR until True IDE interface setting up.-OE (PC Card Memory mode)I 9-OE is used for the control of reading register’s data in attribute area or task file area.-OE(PC Card I/O mode)-OE is used for the control of reading register’s data in attribute area.-ATASEL(True IDE mode)To enable True IDE mode this input should be grounded by the host.RDY/-BSY (PC Card Memory mode)O 37The signal is RDY/-BSY pin. RDY/-BSY pin turns low level during the card internal initialization operation at VCC applied or reset applied, so next access to the card should be after the signal turned high level.-IREQ(PC Card I/O mode)This signal is active low -IREQ pin. The signal of low level indicates that the card is requesting software service to host, and high level indicates that the card is not requesting.INTRQ(True IDE mode)This signal is the active high Interrupt Request to the host.-REG (PC Card Memory mode)Attribute memory select I 44-REG is used during memory cycles to distinguish between task file and attribute memory accesses.High for task file, Low for attribute memory is accessed.-REG(PC Card I/O mode)-REG is constantly low when task file or attribute memory is accessed.-REG(True IDE mode)This input signal is not used and should be connected to VCC.HB288256/192/160/128/096/064/032C58Signal nameDirection Pin No.DescriptionRESET (PC Card Memory mode)I 41This signal is active high RESET pin. If this signal is asserted high, the card internal initialization begins to operate. During the card internal initializationRDY/-BSY is low. After the card internal initialization RDY/-BSY is high.RESET(PC Card I/O mode)This signal is active high RESET pin. If this signal is asserted high, the card internal initialization begins to operate. In this mode, RDY/-BSY signal can not be used, so using Status Register the Ready/Busy status can be confirmed.-RESET(True IDE mode)This signal is active low -RESET pin. If this signal is asserted low, all the register’s in this card are reset.In this mode, RDY/-BSY signal can not be used, so using status register the Ready/Busy status can be confirmed.VCC (PC Card Memory mode)—13, 38+5 V, +3.3 V power.VCC(PC Card I/O mode)VCC(True IDE mode)-VS1, -VS2(PC Card Memory mode)O 33, 40These signals are intended to notify VCC requirement to host. -VS1 is held grounded and -VS2 is nonconnected in this card.-VS1, -VS2(PC Card I/O mode)-VS1, -VS2(True IDE mode)-WAIT (PC Card Memory mode)O 42This signal is active low -WAIT pin. In this card this signal is constantly high level.-WAIT(PC Card I/O mode)IORDY(True IDE mode)This output signal may be used as IORDY. In this card this signal is constantly high impedance.-WE (PC Card Memory mode)I 36-WE is used for the control of writing register’s data in attribute memory area or task file area.-WE(PC Card I/O mode)-WE is used for the control of writing register’s data in attribute memory area.-WE(True IDE mode)This input signal is not used and should be connected to VCC by the host.HB288256/192/160/128/096/064/032C59Signal nameDirection Pin No.DescriptionWP (PC Card Memory mode)Write Protect O 24WP is held low because this card does not have write protect switch.-IOIS16(PC Card I/O mode)-IOIS16 is asserted when task file registers are accessed in 16-bit mode.-IOIS16(True IDE mode)This output signal is asserted low when this device is expecting a word data transfer cycle. Initial mode is 16-bit. If the user issues a Set Feature Command to put the device in Byte access mode, the card permits 8-bit accesses.HB288256/192/160/128/096/064/032C5 Card Block Diagram10Card Function Explanation Register construction• Attribute regionConfiguration register• Configuration Option register• Configuration and Status register• Pin Replacement register• Socket and Copy registerCIS ( C a rd I n formation S t ructure)• Task File regionData registerError registerFeature registerSector Count registerSector Number registerCylinder Low registerCylinder High registerDrive Head registerStatus registerAlternate Status registerCommand registerDevice Control registerDrive Address registerHost access specifications1. Attribute access specificationsWhen CIS-ROM region or Configuration register region is accessed, read and write operations are executed under the condition of -REG = "L" as follows. That region can be accessed by Byte/Word/Odd-byte modes which are defined by PC card standard specifications.Attribute Read Access ModeMode-REG-CE2-CE1A0-OE-WE D8 to D15D0 to D7 Standby mode×H H×××High-Z High-ZByte access (8-bit)L H L L L H High-Z even byteL H L H L H High-Z invalidWord access (16-bit)L L L×L H invalid even byte Odd byte access (8-bit)L L H×L H invalid High-Z Note: ×: L or HAttribute Write Access ModeMode-REG-CE2-CE1A0-OE-WE D8 to D15D0 to D7 Standby mode×H H×××Don’t care Don’t care Byte access (8-bit)L H L L H L Don’t care even byteL H L H H L Don’t care Don’t care Word access (16-bit)L L L×H L Don’t care even byte Odd byte access (8-bit)L L H×H L Don’t care Don’t care Note: ×: L or HAttribute Access Timing Example2. Task File register access specificationsThere are two cases of Task File register mapping, one is mapped I/O address area, the other is mapped Memory address area. Each case of Task File register read and write operations are executed under the condition as follows. That area can be accessed by Byte/Word/Odd Byte mode which are defined by PC card standard specifications.(1) I/O address mapTask File Register Read Access Mode (1)Mode-REG-CE2-CE1A0-IORD-IOWR-OE-WE D8 to D15D0 to D7 Standby mode×H H×××××High-Z High-Z Byte access (8-bit)L H L L L H H H High-Z even byte L H L H L H H H High-Z odd byte Word access (16-bit)L L L×L H H H odd byte even byte Odd byte access (8-bit)L L H×L H H H odd byte High-Z Note: ×: L or HTask File Register Write Access Mode (1)Mode-REG-CE2-CE1A0-IORD-IOWR-OE-WE D8 to D15D0 to D7 Standby mode×H H×××××Don’t care Don’t care Byte access (8-bit)L H L L H L H H Don’t care even byte L H L H H L H H Don’t care odd byte Word access (16-bit)L L L×H L H H odd byte even byte Odd byte access (8-bit)L L H×H L H H odd byte Don’t care Note: ×: L or HTask File Register Access Timing Example (1)(2) Memory address mapTask File Register Read Access Mode (2)Mode-REG-CE2-CE1A0-OE-WE-IORD-IOWR D8 to D15D0 to D7 Standby mode×H H×××××High-Z High-Z Byte access (8-bit)H H L L L H H H High-Z even byteH H L H L H H H High-Z odd byte Word access (16-bit)H L L×L H H H odd byte even byte Odd byte access (8-bit)H L H×L H H H odd byte High-Z Note: ×: L or HTask File Register Write Access Mode (2)Mode-REG-CE2-CE1A0-OE-WE-IORD-IOWR D8 to D15D0 to D7 Standby mode×H H×××××Don’t care Don’t care Byte access (8-bit)H H L L H L H H Don’t care even byteH H L H H L H H Don’t care odd byte Word access (16-bit)H L L×H L H H odd byte even byte Odd byte access (8-bit)H L H×H L H H odd byte Don’t care Note: ×: L or HTask File Register Access Timing Example (2)3. True IDE ModeThe card can be configured in a True IDE mode of operation. This card is configured in this mode only when the -OE input signal is asserted GND by the host. In this True IDE mode Attribute Registers are not accessible from the host. Only I/O operation to the task file and data register are allowed. If this card is configured during power on sequence, data register are accessed in word (16-bit). The card permits 8-bit accesses if the user issues a Set Feature Command to put the device in 8-bit mode.True IDE Mode Read I/O FunctionMode-CE2-CE1A0 to A2-IORD-IOWR D8 to D15D0 to D7 Invalid mode L L×××High-Z High-Z Standby mode H H×××High-Z High-Z Data register access H L0L H odd byte even byte Alternate status access L H6H L H High-Z status out Other task file access H L1-7H L H High-Z data Note: ×: L or HTrue IDE Mode Write I/O FunctionMode-CE2-CE1A0 to A2-IORD-IOWR D8 to D15D0 to D7 Invalid mode L L×××don’t care don’t care Standby mode H H×××don’t care don’t care Data register access H L0H L odd byte even byte Control register access L H6H H L don’t care control in Other task file access H L1-7H H L don’t care data Note: ×: L or HTrue IDE Mode I/O Access Timing ExampleConfiguration register specificationsThis card supports four Configuration registers for the purpose of the configuration and observation of this card. These registers can be used in memory card mode and I/O card mode. In True IDE mode, these registers can not be used.1. Configuration Option register (Address 200H)This register is used for the configuration of the card configuration status and for the issuing soft reset to the card.bit7bit6bit5bit4bit3bit2bit1bit0 SRESET LevlREQ INDEXNote: initial value: 00HName R/W FunctionSRESET (HOST->)R/W Setting this bit to "1", places the card in the reset state (Card Hard Reset). This operation is equal to Hard Reset, except this bit is not cleared. Then this bit set to "0", places the card in the reset state of Hard Reset (This bit is set to "0" by Hard Reset) .Card configuration status is reset and the card internal initialized operation starts when Card Hard Reset is executed, so next access to the card should be the same sequence as the power on sequence.LevlREQ (HOST->)R/W This bit sets to "0" when pulse mode interrupt is selected, and "1" when level mode interrupt is selected.INDEX (HOST->)R/W This bits is used for select operation mode of the card as follows.When Power on, Card Hard Reset and Soft Reset, this data is "000000" for the purpose of Memory card interface recognition.INDEX bit assignmentINDEX bit543210Card mode Task File register address Mapping mode 000000Memory card0H to FH, 400H to 7FFH memory mapped 000001I/O card xx0H to xxFH contiguous I/O mapped 000010I/O card1F0H to 1F7H, 3F6H to 3F7H primary I/O mapped 000011I/O card170H to 177H, 376H to 377H secondary I/O mapped2. Configuration and Status register (Address 202H)This register is used for observing the card state.bit7bit6bit5bit4bit3bit2bit1bit0 CHGED SIGCHG IOIS800PWD INTR0 Note: initial value: 00HName R/W FunctionCHGED (CARD->)R This bit indicates that CRDY/-BSY bit on Pin Replacement register is set to "1". When CHGED bit is set to "1", -STSCHG pin is held "L" at the condition of SIGCHG bit set to "1" and the card configured for the I/O interface.SIGCHG (HOST->)R/W This bit is set or reset by the host for enabling and disabling the status-change signal (-STSCHG pin). When the card is configured I/O card interface and this bit is set to "1", -STSCHG pin is controlled by CHGED bit. If this bit is set to "0", -STSCHG pin is kept "H".IOIS8 (HOST->)R/W The host sets this field to "1" when it can provide I/O cycles only with on 8-bit data bus (D7 to D0).PWD (HOST->)R/W When this bit is set to "1", the card enters sleep state (Power Down mode). When this bit is reset to "0", the card transfers to idle state (active mode). RRDY/-BSY bit on Pin Replacement Register becomes BUSY when this bit is changed. RRDY/-BSY will not become Ready until the power state requested has been entered. This cardautomatically powers down when it is idle, and powers back up when it receives acommand.INTR (CARD->)R This bit indicates the internal state of the interrupt request. This bit state is available whether I/O card interface has been configured or not. This signal remains true until the condition which caused the interrupt request has been serviced. If interrupts aredisabled by the -IEN bit in the Device Control Register, this bit is a zero.3. Pin Replacement register(Address 204H)This register is used for providing the signal state of -IREQ signal when the card configured I/O card interface. bit7bit6bit5bit4bit3bit2bit1bit0 00CRDY/-BSY011RRDY/-BSY0 Note: initial value: 0CHName R/W FunctionCRDY/-BSY (HOST->)R/W This bit is set to "1" when the RRDY/-BSY bit changes state. This bit may also be written by the host.RRDY/-BSY (HOST->)R/W When read, this bit indicates +READY pin states. When written, this bit is used for CRDY/-BSY bit masking.4. Socket and Copy register (Address 206H)This register is used for identification of the card from the other cards. Host can read and write this register. This register should be set by host before this card's Configuration Option register set.bit7bit6bit5bit4bit3bit2bit1bit0000DRV#0000Note: initial value: 00HName R/W FunctionDRV# (HOST->)R/W This fields are used for the configuration of the plural cards. When host configures the plural cards, written the card’s copy number in this field. In this way, host can perform the card’s master/slave organization.CIS informationsCIS informations are defined as follows. By reading attribute address from "0000 H", card CIS informations can be confirmed.A dd ress Data76543210Description of contents CIS function000H01H CISTPL_DEVICE Device info tuple Tuple code002H04H TPL_LINK Link length is 4 byte Link to next tuple004H DFH Device type WPS Device speed Device type = DH: I/O deviceWPS = 1: No WPDevice speed = 7: ext speedDevice type, WPS, speed006H4AH EXT Speedmantissa Speedexponent400 ns if no wait Extended speed008H01H1x2k units2k byte of address space Device size00AH FFH List end marker End of device END marker00CH1CH CISTPL_DEVICE_OC Other conditions device infotupleTuple code00EH04H TPL_LINK Link length is 4 bytes Link to next tuple010H02H EXT Reserved VCCMWAIT3 V, wait is not used Other conditions info field012H D9H Device type WPS Device speed Device type = DH: I/O deviceWPS = 1: No WPDevice speed = 1: 250 nsDevice type, WPS, speed014H01H1x2k units2k byte of address space Device size016H FFH List end marker End of device END marker018H18H CISTPL_JEDEC_C JEDEC ID common memory Tuple code01AH02H TPL_LINK Link length is 2 bytes Link to next tuple01CH DFH PCMCIA’s manufacturer’s JEDECID codeManufacturer’s ID code JEDEC ID of PC Card ATA 01EH01H PCMCIA JEDEC device code2nd byte of JEDEC ID020H20H CISTPL_MANFID Manufacturer’s ID code Tuple code022H04H TPL_LINK Link length is 4 bytes Link to next tuple024H07H Low byte of PCMCIAmanufacturer’s code HITACHI JEDECmanufacturer’s IDLow byte of manufacturer’sID code026H00H High byte of PCMCIAmanufacturer’s code Code of 0 because other byteis JEDEC 1 bytemanufacture’s IDHigh byte of manufacturer’sID code028H00H Low byte of product code HITACHI code for PC CARDATALow byte of product code 02AH00H High byte of product code High byte of product codeA dd ress Data76543210Description of contents CIS function02CH15H CISTPL_VERS_1Level 1 version/product info Tuple code02EH15H TPL_LINK Link length is 15h bytes Link to next tuple030H04H TPPLV1_MAJOR PCMCIA2.0/JEIDA4.1Major version032H01H TPPLV1_MINOR PCMCIA2.0/JEIDA4.1Minor version034H48H‘ H ’Info string 1036H49H‘ I ’038H54H‘ T ’03AH41H‘ A ’03CH43H‘ C ’03EH48H‘ H ’040H49H‘ I ’042H00H Null terminator044H46H‘ F ’Info string 2046H4CH‘ L ’048H41H‘ A ’04AH53H‘ S ’04CH48H‘ H ’04EH00H Null terminator050H35H‘ 5 ’Vender specific strings 052H2EH‘ . ’054H30H‘ 0 ’056H00H Null terminator058H FFH List end marker End of device END marker05AH21H CISTPL_FUNCID Function ID tuple Tuple code05CH02H TPL_LINK Link length is 2 bytes Link to next tuplePC card function code 05EH04H TPLFID_FUNCTION = 04H Disk function, may be silicon,may be removableSystem initialization byte 060H01H Reserved R P R = 0: No BIOS ROMP = 1: Configure card atpower on062H22H CISTPL_FUNCE Function extension tuple Tuple code064H02H TPL_LINK Link length is 2 bytes Link to next tuple066H01H Disk function extension tuple type Disk interface type Extension tuple type for disk 068H01H Disk interface type PC card ATA interface Interface type06AH22H CISTPL_FUNCE Function extension tuple Tuple code06CH03H TPL_LINK Link length is 3 bytes Link to next tuple06EH02H Disk function extension tuple type Single drive Extension tuple type for disk070H0CH Reserved D U S V No VPP, silicon, single driveV = 0: No VPPrequiredS = 1: SiliconU = 1: Unique serial #D = 0: Single drive on card Basic ATA option parameters byte 1072H0FH R I E N P3P2P1P0P0: Sleep mode supportedP1: Standby modesupportedP2: Idle mode suppportedP3: Drive auto power controlN: Some config excludes3X7E: Index bit is emulatedI: Twin IOIS16# data regonlyR: Reserved Basic ATA option parameters byte 2074H1AH CISTPL_CONFIG Configuration tuple Tuple code076H05H TPL_LINK Link length is 5 bytes Link to next tuple078H01H RFS RMS RAS RFS: ReservedRM S: T PC C_R MSK s i z e - 1 =RAS: T PC C_R AD R s i z e - 1 =11 byte register mask2 byte config base addressSize of fields byte TPCC_SZ07AH03H TPCC_LAST Entry with config index of03H is final entry in tableLast entry of config registers07CH00H TPCC_RADR (LSB)Configuration registers arelocated at 200H in REGspaceLocation of config registers 07EH02H TPCC_RADR (MSB)080H0FH Reserved S P C I I: Configuration indexC: Configuration and statusP: Pin replacementS: Socket and copy Configuration registers present maskTPCC_RMSKtuple084H08H TPL_LINK Link length is 8 bytes Link to next tuple086H C0H I D Configuration index Memory mapped I/OconfigurationI = 1: Interface byte followsD = 1: Default entryConfiguration index = 0Configuration table index byteTPCE_INDX088H40H W R P B Interface type W = 0: Wait not usedR = 1: Ready activeP = 0: WP not usedB = 0: BVD1 and BVD2 notusedIF type = 0: Memoryinterface Interface description field TPCE_IF08AH A1H M MS IR IO T P M = 1: Misc info presentMS = 01: Memory space infosingle 2-byte lengthIR = 0: No interrupt infopresentIO = 0: No I/O port infopresentT = 0: No timing info presentP = 1: VCC only infoFeature selection byteTPCE_FS08CH01H R DI PI AI SI H V LV NV Nominal voltage only followsR: ReservedDI: Power down current infoPI: Peak current infoAI: Average current infoSI: Static current infoHV: Max voltage infoLV: Min voltage infoNV: Nominal voltage info Power parameters for VCC08EH55H X Mantissa Exponent Nominal voltage = 5 V VCCnominal value090H08H Length in 256 bytes pages (LSB)Length of memory space is 2kB Memory space description structures (TPCE_MS)092H00H Length in 256 bytes pages (MSB)094H20H X R P R O A T X = 0: No more misc fieldsR: ReservedP = 1: Power downsupportedRO = 0: Not read only modeA = 0: Audio not supportedT = 0: Single drive Miscellaneous features field TPCE_MItuple098H06H TPL_LINK Link length is 6 bytes Link to next tuple09AH00H I D Configuration index Memory mapped I/OconfigurationI = 0: No Interface byteD = 0: No Default entryConfiguration index = 0Configuration table index byteTPCE_INDX09CH01H M MS IR IO T P M = 0: No Misc infoMS = 00: No Memory spaceinfoIR = 0: No interrupt infopresentIO = 0: No I/O port infopresentT = 0: No timing info presentP = 1: VCC only infoFeature selection byteTPCE_FS09EH21H R DI PI AI SI H V LV NV Nominal voltage only followsR: ReservedDI: Power down current infoPI: Peak current infoAI: Average current infoSI: Static current infoHV: Max voltage infoLV: Min voltage infoNV: Nominal voltage info Power parameters for VCC0A0H B5H X Mantissa Exponent Nominal voltage = 3.0 V VCCnominal value0A2H1EH X Extension+0.3 V Extension byte0A4H4DH X Mantissa Exponent Max average current over 10msec is 45 mAMax. average current。