2N3762中文资料
AP3766中文资料
摘要：高效率、高功率因数、安全隔离、符合EMI标准、高电流控制精度、高可靠性、体积小、成本低等成为LED驱动电源的关键*价指标。
本文介绍了一系列高性价比的覆盖中小功率应用LED驱动电源解决方案。
1 引言在全球能源短缺、环保要求不断提高的背景下，世界各国大力发展绿色节能照明，LED照明作为一种革命性的节能照明技术，正在飞速发展。
然而，LED驱动电源的要求也在不断提高。
高效率，高功率因数，安全隔离，符合EMI标准，高电流控制精度，高可靠性、体积小、成本低等成为LED驱动电源的关键*价指标。
2 LED驱动电源的具体要求虽然目前国内还没有完善的LED驱动电源标准，然而产业的飞速发展使得LED驱动电源的要求在不断提高。
LED是低压发光器件，具有长寿命，高光效，安全环保，方便使用等优点。
对于市电交流输入电源驱动，隔离输出是基于安全规范的要求。
LED驱动电源的效率越高，则越能发挥LED高光效、节能的优势。
同时高开关工作频率，高效率使得整个LED驱动电源容易安装在设计紧凑的LED灯具中。
高恒流精度保证了大批量使用LED照明时的亮度和光色一致性。
BCD半导体制造有限公司(简称BCD Semi)专注于电源管理集成电路产品的设计研发、工艺制造和销售。
针对LED驱动电源的特殊要求，BCD公司推出了一系列高性价比的覆盖中小功率应用解决方案。
3 10W以下功率LED灯杯应用方案目前10W以下功率LED应用广泛，众多一体式产品面世，即LED驱动电源与LED灯整合在一个一体式的灯具中，方便了用户直接替代白炽灯和节能灯。
典型的灯具规格有GU10,E27,PAR30等。
BCD公司针对这一应用，推出的方案电路原理图如图1所示。
该方案具有以下特点：基于BCD原边控制芯片AP3766，无需光耦和副边电流控制电路，实现隔离恒流输出；高效率，典型5W应用效率大于80%，空载功耗小于30mW；恒流精度高，满足全输出电压范围内输出电流误差小于5%；元件数量少，体积小，整个电路可以安装在常用规格灯杯中；安全可靠，隔离输出，具有输出开路保护，过压保护及短路保护功能；功率开关管采用三极管，系统成本低。
2N5322中文资料
2N53222N5323SMALL SIGNAL PNP TRANSISTORSsSILICON EPITAXIAL PLANAR PNP TRANSISTORSs MEDIUM POWER AMPLIFIERsNPN COMPLEMENTS ARE 2N5320 AND 2N5321DESCRIPTION The 2N5322 and 2N5323 are silicon epitaxial planar PNP transistors in Jedec TO-39 metal case. They are especially intended for high-voltage medium power application in industrial and commercial equipments.The complementary NPN types are respectivelythe 2N5320 and 2N5321June 1997ABSOLUTE MAXIMUM RATINGS1/4THERMAL DATAELECTRICAL CHARACTERISTICS (T case = 25 oC unless otherwise specified)2N5322/2N53232/42N5322/2N53233/4Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics.© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights ReservedSGS-THOMSON Microelectronics GROUP OF COMPANIESAustralia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.2N5322/2N53234/4。
RN7302用户手册_v1.0
三相多功能计量芯片RN7302深圳市锐能微科技有限公司 第1 页 版本1.0RN7302用户手册V1.0 日期: 2014-1-15目录1 芯片介绍 (3)1.1 芯片特性 (3)1.2 功能框图 (4)1.3 管脚定义 (5)1.4 典型应用 (7)2 系统功能 (8)2.1 电源监测 (8)2.2 工作模式 (8)2.3 系统复位 (8)2.4 计量模式 (9)2.5 睡眠模式 (16)2.6 中断 (16)3 寄存器 (18)3.1 参数寄存器列表 (18)3.2 参数寄存器说明 (22)3.3 配置和状态寄存器列表 (26)3.4 配置和状态寄存器说明 (29)3.5 复位和模式切换 (49)3.6 写保护 (50)4 校表方法 (51)4.1 概述 (51)4.2 功率校表法 (51)4.3 功率校表法举例 (55)4.4 脉冲校表法 (56)5 通信接口 (58)5.1 SPI地址空间描述 (58)5.2 SPI接口信号说明 (58)5.3 SPI帧格式 (58)5.4 SPI写时序 (60)5.5 SPI读时序 (60)5.6 SPI接口可靠性设计 (61)6 电气特性 (62)7 芯片封装 (64)1 芯片介绍1.1 芯片特性◆计量✓提供全波、基波有功电能，5000:1动态范围内，非线性误差<0.1%，满足0.5S和0.2S 级有功电能表精度要求✓提供全波、基波无功电能，5000:1动态范围内，非线性误差<0.1%✓提供全波、基波RMS、PQS视在电能✓提供有功、无功功率方向，支持无功四象限判断✓具有潜动启动功能，启动阈值可调✓电表常数可调✓提供有功、无功、视在的快速脉冲计数✓提供3路全波、基波，有功、无功和视在脉冲输出◆测量✓提供全波、基波和谐波三相电压电流有效值，2000:1动态范围内，测量误差<0.2% ✓提供全波、基波有功、无功、RMS和PQS视在功率，2000:1动态范围内，测量误差<0.1%✓提供全波、基波功率因数，测量误差<0.2%✓提供电压线频率，测量误差<0.02%✓提供6路相角，测量误差<0.02°✓提供7路ADC瞬时采样数据，典型应用下采样率8Khz✓提供灵活地ADC同步采样数据缓存768x24bit ，64或128点每周波，便于谐波分析✓提供电压矢量和有效值，2种电流矢量和有效值✓提供7路过零检测，过零阈值可设置✓提供电压相序错检测✓提供失压指示，失压阈值可设置✓提供电压暂降检测✓提供过压、过流检测✓提供谐波、三相不平衡度、闪变和电压波动、电压骤升骤降、电压中断等电能质量参数软件库◆软件校表✓提供7路ADC通道增益校正✓提供7路ADC通道相位校正，其中A、B、C三路电流通道支持分段相位校正✓提供功率增益校正✓提供有功、无功功率分段相位校正✓提供有功、无功、有效值Offset校正✓提供直流offset自动校正功能✓提供校验和寄存器，对校表数据自动校验◆适用于三相三线、三相四线制◆单+3.3V 电源供电，具有电源监控功能◆ 内置1.25V ±1% ADC 基准电压，温度系数典型值5ppm/℃，最大15ppm/℃ ◆ 具有高速SPI 接口，传输速率可达3.5Mbps ，提供写保护功能 ◆ 具有一个中断输出引脚 ◆ 工作电压范围：3.0V-3.6V ◆ 工作温度范围：-40℃-85℃ ◆ 采用LQFP32绿色封装1.2 功能框图891112131429322262562728321247基准电压HPF ADC1516系统控制和寄存器单元AVCC VO DVCC AGND DGND IAP IAN IBP ICP IBN ICN INP INNVAP VBP VCP VCN REFV XIXOSDOSCLK SCSN 2423HPFRSTN5VAN 10VBN C T R O L &D A T A B U SSPID2F脉冲输出引脚复用配置有功功率无功功率视在功率电压电流有效值ADCADC 时钟振荡电路171819CF1CF2数字信号处理CF3INTN SDIPGA 30ADCADCADCADCPGA PGA PGA PGAPGA PGA 功率因数过压过流检测过零检测电压暂降检测相角相序检测电压线频率20波形缓存电源管理稳压模块RN7302图1-1 系统框图1.3 管脚定义RN730224182219211731302827252629578436211112131491015162023IAP IAN AGND IBP IBN AVCC ICP ICNSCLK SDO INTN DVCC RSTN CF1CF2CF3V A PV A NV B PV B NV C PV C NI N PI N ND V C C D G N D V O X I X O S D I S C S N 32RE F V图1-2 管脚排列图表1-1 RN7302 管脚功能说明引脚 标识 特性 功能描述1，2 IAP ， IAN 输入 电流采样通道A 的正、负模拟输入引脚。
2N2222中文资料_数据手册_参数
Product specification
2N2222; 2N2222A
SYMBOL
PARAMETER
CONDITIONS
MIN. MAX. UNIT
Switching times (between 10% and 90% levels); see Fig.2
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D125
2N2222; 2N2222A NPN switching transistors
Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04
DC current gain 2N2222A
IE = 0; VCB = 60 V IE = 0; VCB = 60 V; Tamb = 150 °C IC = 0; VEB = 3 V IC = 0.1 mA; VCE = 10 V IC = 1 mA; VCE = 10 V IC = 10 mA; VCE = 10 V IC = 150 mA; VCE = 1 V; note 1 IC = 150 mA; VCE = 10 V; note 1 IC = 10 mA; VCE = 10 V; Tamb = −55 °C
SYMBOL
PARAMETER
Rth j-a Rth j-c
thermal resistance from junction to ambient thermal resistance from junction to case
CONDITIONS in free air
AN2526NFH资料
AN2526NFH
Automotive LCD TV signal processor IC
I Overview
The AN2526NFH is a video signal processing IC with an LCD's 5 V-source driving power supply for TFT color LCD (normally white type), and it supports NTSC and PAL systems. The main circuitry of this IC includes videosignal processing circuit, color signal processing circuit, interface circuit, synchronizing circuit and many color quality adjusting circuits. This IC converts the composite video signal or separated Y/C signal or RGB signals into RGB signals available for TFT color LCD.
1 µF 5.1 kΩ NTSC 3.58 MHz PAL 4.43 MHz 0.1 µF
56
VXO
57
58
CLMP (BGP)
R-out
Trap
GND 3
59
GND1 21GBiblioteka mma4.7 µF60
YAP ctl.
VCC1
50 kB
R−Y out
61
20 19
Samsung-NAND-FLASH命名规则
三星的pure nand flash〔就是不带其他模块只是nand flash存储芯片〕的命名规那么如下：1. Memory (K)2. NAND Flash : 93. Small Classification(SLC : Single Level Cell, MLC : Multi Level Cell,SM : Smart Media, S/B : Small Block)1 : SLC 1 Chip XD Card2 : SLC 2 Chip XD Card4 : SLC 4 Chip XD CardA : SLC + Muxed I/ F ChipB : Muxed I/ F ChipD : SLC Dual SME : SLC DUAL (S/ B)F : SLC NormalG : MLC NormalH : MLC QDPJ : Non-Muxed OneNandK : SLC Die StackL : MLC DDPM : MLC DSPN : SLC DSPQ : 4CHIP SMR : SLC 4DIE STACK (S/ B)S : SLC Single SMT : SLC SINGLE (S/ B)U : 2 STACK MSPV : 4 STACK MSPW : SLC 4 Die Stack4~5. Density〔注：实际单位应该是bit，而不是Byte〕12 : 512M16 : 16M28 : 128M32 : 32M40 : 4M56 : 256M64 : 64M80 : 8M1G : 1G2G : 2G4G : 4G8G : 8GAG : 16GBG : 32GCG : 64GDG : 128G00 : NONE6~7. Organization00: NONE08: x816: x168. VccA : 1.65V~3.6VB : 2.7V (2.5V~2.9V)C : 5.0V (4.5V~5.5V)D : 2.65V (2.4V ~ 2.9V)E : 2.3V~3.6VR : 1.8V (1.65V~1.95V)Q : 1.8V (1.7V ~ 1.95V)T : 2.4V~3.0VU : 2.7V~3.6VV : 3.3V (3.0V~3.6V)W : 2.7V~5.5V, 3.0V~5.5V0 : NONE9. Mode0 : Normal1 : Dual nCE & Dual R/ nB4 : Quad nCE & Single R/ nB5 : Quad nCE & Quad R/ nB9 : 1st block OTPA : Mask Option 1L : Low grade10. GenerationM : 1st GenerationA : 2nd GenerationB : 3rd GenerationC : 4th GenerationD : 5th Generation11. "─"12. PackageA : COBB : TBGAC : CHIP BIZD : 63-TBGAE : TSOP1 (Lead-Free, 1217)F : WSOP (Lead-Free)G : FBGAH : TBGA (Lead-Free)I : ULGA (Lead-Free)J : FBGA (Lead-Free)K : TSOP1 (1217)L : LGAM : TLGAN : TLGA2P : TSOP1 (Lead-Free)Q : TSOP2 (Lead-Free)S : SMART MEDIAT : TSOP2U : COB (MMC)V : WSOPW : WAFERY : TSOP113. TempC : CommercialI : IndustrialS : SmartMediaB : SmartMedia BLUE0 : NONE (Containing Wafer, CHIP, BIZ, Exceptionhandling code)3 : Wafer Level 314. Bad BlockA : Apple Bad BlockB : Include Bad BlockD : Daisychain SampleK : Sandisk BinL : 1~5 Bad BlockN : ini. 0 blk, add. 10 blkS : All Good Block0 : NONE (Containing Wafer, CHIP, BIZ, Exceptionhandling code)15. NAND-Reserved0 : Reserved16. Packing Type- Common to all products, except of Mask ROM- Divided into TAPE & REEL(In Mask ROM, divided into TRAY, AMMO Packing Separately) 【举例说明】K9GAG08U0M 详细信息如下:1. Memory (K)2. NAND Flash : 93. Small Classification(SLC : Single Level Cell, MLC : Multi Level Cell,SM : SmartMedia, S/B : Small Block)G : MLC Normal4~5. DensityAG : 16G (Note: 这里单位是bit而不是byte，因此实际大小是16Gb=2GB)0 : Normal (x8)7. Organization0 : NONE 8 : x88. VccU : 2.7V~3.6V9. Mode0 : Normal10. GenerationM : 1st Generation11. "─"12. PackageP : TSOP1 (Lead-Free)13. TempC : Commercial14. Customer Bad BlockB : Include Bad Block15. Pre-Program Version0 : None整体描述就是：K9GAG08U0M是，三星的MLC Nand Flash，工作电压为2.7V~3.6V，x8〔即I/O是8位〕，大小是2GB〔16Gb〕，TSOP1封装。
开关型稳压芯片LM2576中文资料
开关型稳压芯片LM2576中文资料LM2576系列开关稳压集成电路是线性三端稳压器件(如78xx系列端稳压集成电路)的替代品，它具有靠得住的工作性能、较高的工作效率和较强的输出电流驱动能力，从而为MCU的稳固、靠得住工作提供了强有力的保证。
LM2576简介LM2576系列是美国国家半导体公司生产的3A电流输出降压开关型集成稳压电路，它内含固定频率振荡器(52kHz)和基准稳压器，并具有完善的爱惜电路，包括电流限制及热关断电路等，利用该器件只需极少的外围器件即可组成高效稳压电路。
LM2576系列包括LM2576(最高输入电压40V)及LM2576HV(最高输入电压60V)二个系列。
各系列产品均提供有、5V、12V(-12)、15V(-15)及可调(-ADJ)等多个电压档次产品。
另外，该芯片还提供了工作状态的外部操纵引脚。
LM2576系列开关稳压集成电路的要紧特性如下[2]：●最大输出电流：3A;●最高输入电压：LM2576为40V，LM2576HV为60V;●输出电压：、5V、12V、15V和ADJ(可调)等可选;●振东频率：52kHz;●转换效率：75%～88%(不同电压输出时的效率不同);●操纵方式：PWM;●工作温度范围：-40℃～+125℃●工作模式：低功耗/正常两种模式可外部操纵;●工作模式操纵：TTL电平兼容;●所需外部元件：仅四个(不可调)或六个(可调);●器件爱惜：热关断及电流限制;●封装形式：TO-220或TO-263。
LM2576的内部框图如图1所示，该框图的引脚概念对应于五脚TO-220封装形式。
LM2576内部包括52kHz振荡器、基准稳压电路、热关断电路、电流限制电路、放大器、比较器及内部稳压电路等。
为了产生不同的输出电压，通常将比较器的负端接基准电压，正端接分压电阻网络，如此可依照输出电压的不同选定不同的阻值，其中R1=1k Ω(可调-ADJ时开路)，R2别离为kΩ、kΩ(5V)、kΩ(12V)、kΩ(15V)和0(-ADJ)，上述电阻依据型号不同已在芯片内部做了精准调整，因此无需利用者考虑。
KSP2222A中文资料
KSP2222ANPN Epitaxial Silicon TransistorAbsolute Maximum Ratings T a =25°C unless otherwise notedElectrical Characteristics T a =25°C unless otherwise noted* Pulse Test: Pulse Width ≤300µs, Duty Cycle ≤2%* Also available as and PN2222ASymbol ParameterValue Units V CBO Collector-Base Voltage 75V V CEO Collector-Emitter Voltage 40V V EBO Emitter-Base Voltage 6V I C Collector Current600mA P C Collector Power Dissipation 625mW T J Junction Temperature 150°C T STGStorage Temperature-55 ~ 150°CSymbol ParameterTest Condition Min.Typ.Max.Units BV CBO Collector-Base Breakdown Voltage I C =10µA, I E =075V BV CEO Collector Emitter Breakdown Voltage I C =10mA, I B =040V BV EBO Emitter-Base Breakdown Voltage I E =10µA, I C =06V I CBO Collector Cut-off Current V CB =60V, I E =00.01µA I EBO Emitter Cut-off Current V EB =3V, I C =010nAh FEDC Current GainI C =0.1mA, V CE =10V V CE =10V, I C =1mA V CE =10V, I C =10mA V CE =10V, *I C =150mA V CE =10V, *I C =500mA 35507510040300V CE (sat)* Collector-Emitter Saturation Voltage I C =150mA, I B =15mA I C =500mA, I B =50mA 0.31V V V BE (sat)* Base-Emitter Saturation Voltage I C =150mA, I B =15mA I C =500mA, I B =50mA 0.61.22V V f T Current Gain Bandwidth Product V CE =20V, I C =20mA f=100MHz300MHz C ob Output Capacitance V CB =10V, I E =0, f=1MHz 8pF t ON Turn On Time V CC =30V, I C =150mAI B1=15mA, V BE (off)=0.5V 35ns t OFF Turn Off Time V CC =30V, I C =150mA I B1=I B2=15mA 285ns NFNoise FigureI C =100µA, V CE =10V R S =IK Ω, f=1KHz4dBKSP2222AGeneral Purpose Transistor•Collector-Emitter Voltage: V CEO = 40V•Collector Power Dissipation: P C (max)=625mW •Refer KSP2222 for graphs1. Emitter2. Base3. CollectorTO-921KSP2222ADISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:TRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, or (c) whose failure to performwhen properly used in accordance with instructions for useprovided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can bereasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of TermsDatasheet Identification Product Status DefinitionAdvance InformationFormative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.PreliminaryFirst ProductionThis datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.No Identification Needed Full ProductionThis datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.Obsolete Not In ProductionThis datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.A CEx™Bottomless™CoolFET™CROSSVOLT ™DenseTrench™DOME™EcoSPARK™E 2CMOS™EnSigna™FACT™FACT Quiet Series™FAST ®FASTr™FRFET™GlobalOptoisolator™GTO™HiSeC™ISOPLANAR™LittleFET™MicroFET™MICROWIRE™OPTOLOGIC™OPTOPLANAR™PACMAN™POP™Power247™PowerTrench ®QFET™QS™QT Optoelectronics™Quiet Series™SLIENT SWITCHER ®SMART START™STAR*POWER™Stealth™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TruTranslation™TinyLogic™UHC™UltraFET ®VCX™STAR*POWER is used under license。