2N4401_FAI
2N4401中文资料
Small Signal Transistors TO-92 Case (Continued)73TYPE NO.DESCRIPTIONLEAD V CBOV CEO V EBO I CBO @V CBh FE@ V CE @ I C V CE (SA T) @ I C C obf TNFt offCODE(nA)(V)(V)(V)*I CES (V)*h FE (V)(mA) (V)(mA)(pF)(MHz)(dB)*V CES *I CEV (1kHZ)*C rb *TYPMIN MIN MAX MAX MIN MAX MAX MIN MAX MAX 2N4401NPN AMPL/SWITCH EBC 6040 6.0100*35100300 1.01500.75500 6.5250- -2552N4402PNP AMPL/SWITCH EBC 4040 5.0100*3550150 2.01500.755008.5150- 2552N4403PNP AMPL/SWITCH EBC 4040 5.0100*35100300 2.01500.755008.5200- -2552N4410NPN LOW NOISE EBC 12080 5.010******** 1.0100.20 1.01260- -- -2N4424NPN LOW NOISE ECB 6040 5.030401805400.450.3050- -- -- -- -- -2N4952NPN AMPL/SWITCH ECB 6030 5.05040100300101500.301508.0250- -4002N4953NPN AMPL/SWITCH ECB 6030 5.05040200600101500.301508.0250- -4002N5086PNP LOW NOISE EBC 5050 3.010******** 5.00.100.3010 4.040 3.0- -2N5087PNP LOW NOISE EBC 5050 3.010******** 5.00.100.3010 4.040 2.0- -2N5088NPN LOW NOISE EBC 3530 4.55020300900 5.00.100.5010 4.050 3.0- -2N5089NPN LOW NOISE EBC 3025 4.550154001,200 5.00.100.5010 4.050 2.0- -2N5172NPN LOW NOISE ECB 2525 5.01002510050010100.251013200*- -- -2N5209NPN LOW NOISE EBC 5050 4.55035100300 5.00.100.7010 4.030 3.0- -2N5210NPN LOW NOISE EBC 5050 4.55035200600 5.00.100.7010 4.030 2.0- -2N5223NPN AMPL/SWITCH EBC 2520 3.010*********.7010 1.2010 4.0150- -- -2N5225NPN AMPL/SWITCH EBC 2525 4.0300153060010500.801002050- -- -2N5226PNP AMPL/SWITCH EBC 2525 4.0300153060010500.801008.050- -- -2N5227PN LOW NOISE EBC 3030 3.0100105070010 2.00.401010100- - 5.02N5232A NPN LOW NOISE ECB 7050 5.03050250500 5.0 2.00.12510 4.0- - 5.0- -2N5306NPN DARLINGTON ECB 252512100257,00070,000 5.0 2.0 1.402001060- -- -2N5308NPN DARLINGTON ECB 404012100407,00070,000 5.0 2.0 1.402001060- -- -2N5356PNP AMPL/SWITCH ECB 2525 4.010********* 1.0500.25508.0250*- -- -2N5366PN AMPL/SWITCH ECB 4040 4.010********* 1.0500.25508.0250*- -- -2N5367PNP AMPL/SWITCH ECB 4040 4.010********* 1.0500.25508.0250*- -- -2N5374PNP AMPL/SWITCH CBE†6030 5.05040200400101500.3015010150- -- -2N5375PNP AMPL/SWITCH CBE†4030 5.0503040400101500.3015010150- -- -2N5376NPN AMPL/SWITCH CBE†6030 5.01030120- - 5.0 1.0- -- -8.0- -- -- -2N5377NPN AMPL/SWITCH CBE†6030 5.01030120- - 5.0 1.0- -- -8.0- -- -- -2N5381NPN AMPL/SWITCH CBE†6040 6.05030100300 1.0101210 4.0300 5.0- -2N5383PNP AMPL/SWITCHCBE†4040 5.05030100300 1.0100.2510 4.5250 4.0- -2N5400PNP HIGH VOL T AGE EBC 130120 5.010********* 5.0100.5050 6.01008.0- -2N5401PNP HIGH VOL T AGE EBC 160150 5.05012060240 5.0100.5050 6.01008.0- -2N5447PNP AMPL/SWITCH CBE†4025 5.010******** 5.0500.255012100- -- -2N5448PNP AMPL/SWITCHCBE†5030 5.010******** 5.0500.255012100- -- -2N5550NPN HIGH VOL T AGE EBC 160140 6.010********* 5.0100.2550 6.010010- -2N5551NPN HIGH VOL T AGE EBC 180160 6.05012080250 5.0100.2050 6.01008.0- -2N5769NPN SA T SWITCH EBC 4015 4.540020401200.35100.50100 4.0500- -182N5770NPN RF OSC EBC 3015 3.010******* 1.08.00.4010 1.1800- -- -2N5771PNP SA T SWITCH EBC 1515 4.5108.0501200.30100.6050 3.0850- -202N5772NPN SA T SWITCH EBC 4015 5.0500*20301200.40300.50300 5.0350- -282N5810NPN AMPL/SWITCH CBE†3525 5.010******** 2.0 2.00.7550015100- -- -2N5811PNP AMPL/SWITCHCBE†35255.010025602002.02.00.7550015100- -- -See pages 216 thru 219 for details.Also available in Ammopack or T ape & Reel,See pages 230 thru 235 for details.† TO-92-18RTO-92TO-92-18R元器件交易网。
NC-1000型雕铣机系统厂商手册-R12.06
运输与储存 注意
本产品必须按其重量正确运输； 堆放产品不可超过规定数量； 不可在产品上攀爬或站立，也不可在上面放置重物； 不可用与产品相连的电缆或器件对产品进行拖动或搬运； 储存和运输时应注意防潮。
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专业 专心 专注
A3
上海维宏电子科技股份有限公司
Shanghai Weihong Electronic Technology Co., Ltd.
接线注意事项 注意
参加接线与检查的人员，必须具有完成此项工作的能力。 系统中的强电设备金属外壳（伺服驱动器、变频器、步进驱动器开关电源、电机）可靠接地，实 现主动屏蔽。 数控装置必须可靠接地，接地电阻应小于 4 欧姆。切勿使用中性线代替地线。否则可能会因受干 扰而不能正常地工作。 接线必须正确、牢固，否则可能产生误动作。 任何一个接线插头上的电压值和正负（＋/－）极性，必须符合说明书的规定，否则可能发生短路 或设备永久性损坏等故障。 在插拔插头或拨动开关前，手指应保持干燥，以防触电或损坏数控装置。 连接电线不能有破损，不能受挤压，否则可能发生漏电或短路。 不能带电插拔插头或打开数控装置机箱。
运行与调试注意事项 注意
运行前，应先检查参数设置是否正确。错误设定会使机器发生意外动作。 参数的修改必须在参数设置允许的范围内，超过允许的范围可能会导致运转不稳定及损坏机器的 故障。
使用注意事项 注意
插入电源前，确保开关在断电的位置上，避免偶然起动。 为避免或减少电磁干扰对数控装置的影响，进行电气设计时，请确定电磁兼容性。系统附近如有 其他电子设备，则可能产生电磁干扰，应接入一个低通滤波器以削弱其影响。 不可对系统频繁通、断电。停电或断电后，若需重新通电，推荐的间隔时间至少为 1 分钟。
2N4401_01中文资料
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
Thermal Characteristics
Symbol
PD RθJC RθJA
TA = 25°C unless otherwise noted
பைடு நூலகம்
Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N4401 625 5.0 83.3 200
-4
3
SWITCHING CHARACTERISTICS
td tr ts tf Delay Time Rise Time Storage Time Fall Time VCC = 30 V, VEB = 2 V, IC = 150 mA, IB1 = 15 mA VCC = 30 V, IC = 150 mA IB1 = IB2 = 15 mA 15 20 225 30 ns ns ns ns
1000
Power Dissipation vs Ambient Temperature
1 PD - POWER DISSIPATION (W)
0.75
SOT-223 TO-92
0.5
SOT-23
0.25
2N4403中文资料
open emitter open base open collector
Tamb ≤ 25 °C
MIN.
− − − − − − − −65 − −65
MAX.
−40 −40 −5 −600 −800 −200 630 +150 150 +150
UNIT
V V V mA mA mA mW °C °C °C
APPLICATIONS • Industrial and consumer switching applications.
DESCRIPTION PNP switching transistor in a TO-92; SOT54 plastic package. NPN complement: 2N4401.
SYMBOL
PARAMETER
CONDITIONS
VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb
collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature
Fig.3 Test circuit for switching times.
1999 Apr 23
4
元器件交易网
Philips Semiconductors
PNP switching transistor
ICMEF212P900MFR 2012 90Ω 2lines Common Mode ESD Filter
Max 4.0 Max 1.0
Max 1.7
MΩ
Volt
mA
10V
25℃±2℃ 25℃±2℃
Min 10
5
Max100
■ TERMINOLOGY
· Vt: Per IEC 61000-4-2, 30A@8kV, level 4, trigger voltage measured initiation of pulse, all test in contact discharge mode.
Capacitance
Current
Insulation Resistance
(Max)
Rated Voltage
Rated Current
symbol
ZCM
RDC
ILCຫໍສະໝຸດ IRCRVRIR
Units
Test Condition
Value
Ω @100MHz 90(±25%)
Ω
㎂
pF
25℃±2℃
5V
0.5Vrms @1MHz
icmef212p900mfr 2012 90Ω 2lines common mode esd filter pagecommon mode esd filter icmef212p900mfr specificationcovers engineeringrequirements icmef212p900m(common mode esd filter) suppressingcommon mode noise highspeed differential data line onecommon mode filters twoesd suppression devices integrated ultralow profile ultralow profile (2.01.20.8mm) ceramicmultilayer type smd component non-polarizedproduct productconforming rohsdirective. lvdslines notebookcomputers usb2.0,ieee1394, dvi, lines pdp,lcd tv, dvd player, pc, audio player, dsc partnumber code mddi,mipi mobilephone productspecifications partnumber code icmef 21 2p 900 seriesname ict'scommon mode esd filter dimensions, 2.0mm lines2p= linesnumber lines,2p= linescommon mode impedance 100mhz),900= 90? tolerance commonmode impedance, 25%type electrodeplating: leadfree packing type, reelitem pagecommon mode esd filter icmef212p900mfr electricalcharacteristics characteristicscommon mode impedance resistance leakage current capacitance insulation resistance
常用处效应管参数及代换[精品]
![常用处效应管参数及代换[精品]](https://img.taocdn.com/s3/m/20b5b0e2f71fb7360b4c2e3f5727a5e9856a27db.png)
常用场效应管参数及替代0000000000000FGA25N120AND （IGBT）1200V/25A//TO3P （电磁炉用）FQA27N25 （MOSFET）250V/27A/TO3P IRFP254FQA40N25 （MOSFET）250V/40A/280W/0.051Ω/TO3P IRFP264FQA55N25 （MOSFET）250V/55A/310W/0.03Ω/TO3PFQA18N50V2 （MOSFET）500V/20A/277W/0.225Ω IRFP460AFQA24N50 （MOSFET）500V/24A/290W/0.2Ω/TO3PFQA28N50 （MOSFET）500V/28.4A/310W/0.126Ω/TO3P MTY30N50EFQL40N50 （MOSFET）500V/40A/560W/0.085Ω/TO264 IRFPS37N50FQA24N60 （MOSFET）600V/24A/TO3PFQA10N80 （MOSFET）800V/9.8A/240W/0.81Ω/TO3PFQA13N80 （MOSFET）800V/13A/300W/0. Ω/TO3PFQA5N90 （MOSFET）900V/5.8A/185W/2.3Ω/TO3PFQA9N90C （MOSFET）900V/8.6A/240W/1.3Ω/TO3PFQA11N90C （MOSFET）900V/11.4A/300W/0.75Ω/TO3PFFA30U20DN （快恢复二极管）200V/2×30A/40ns/TO3P DSEK60-02A FFPF30U60S （快恢复二极管）600V/30A/90ns/TO220F MUR1560FFA30U60DN （快恢复二极管）600V/2×30A/90ns/TO3P DSEK60-06A MBRP3010NTU （肖特基）100V/30A/TO-220MBRA3045NTU （肖特基）45V/30A/TO-3PISL9R3060G2 （快恢复二极管）600V/30A/35ns/200W/TO247 APT30D60B RHRG3060 （快恢复二极管）600V/30A/35nS/TO247FQP44N10 （MOSFET）100V/44A/146W/0.0396Ω/TO220 IRF3710/IRF540N FQP70N10 （MOSFET）100V/57A/160W/0.025Ω/TO220IRFP450B （MOSFET）500V/14A/0.4Ω/205W/TO3PIRFP460C （MOSFET）500V/20A/0.2~0.24Ω/235W IRFP460KA3162/FAN8800 （Drive IC）单IGBT/MOSFETFET驱动ICRHRP860 （快恢复二极管）600V/8A/30NS/TO-220 MUR860RHRP1560 （快恢复二极管）600V/15A/TO0220 MUR1560RHRP8120 （快恢复二极管）1200V/8A/75W/TO220RHRP15120 （快恢复二极管）1200V/15A/TO220RHRP30120 （快恢复二极管）1200V/30A/125W/TO220单DSEI20-10A RHRG30120 （快恢复二极管）1200V/30A/T03PSSH45N20B （MOSFET）200V/45A/TO3P IRFP260FGL40N150D （IGBT）1500V/40A/TO264快速IGBTFGL60N100BNTD （IGBT）1000V/60A/TO264快速IGBT 1MBH60-100 HGTG10N120BND （IGBT）1200V/35A/298W/100ns/TO247HGTG11N120CND （IGBT）1200V/43A/298W/TO247HGTG18N120BND （IGBT）1200V/54A/390W/90ns/TO247FQP5N50C （MOSFET）500V/5A/73W/1.4Ω/TO-220 替代：IRF830,用于35WFQPF5N50C （MOSFET）500V/5A/38W/1.4Ω/TO-220F 替代：IRF830，用于35W FQP9N50C （MOSFET）500V/9A/135W/0.6Ω/TO220 替代：IRF840，用于75W FQPF9N50C （MOSFET）500V/9A/44W/0.6Ω/TO-220F 替代：IRF840，用于75W FQP13N50 （MOSFET）500V/13.4A/190W/0.43Ω/TO220 用于75W/125W产品FQPF13N50 （MOSFET）500V/13.4A/48W/0.43Ω/TO220F 用于75W/125W产品FQD5N50C （MOSFET）500V/5A/1.4Ω/TO252 用于35W FQA16N50 （MOSFET）500V/16A/200W/0.32C/TO3P 用于150W到250W的产品FDP15N50 （MOSFET）500V/15A/0.43Ω/56W/TO220 用于150W左右的产品FQP18N50V2 （MOSFET）500V/18A/0.43Ω/208W/TO220 用于250WG到400W的产品FQPF18N50V2 （MOSFET）500V/18A/0.43Ω/56W/TO220 用于250WG到400W的产品FQA18N50V2 （MOSFET）500V/20A/277W/0.225Ω/TO3P 用于250WG到400W的产品FQA24N50 （MOSFET）500V/24A/290W/0.2Ω/TO3P 用于400W的产品FQA24N60 （MOSFET）600V/23.5A/310W/0.24Ω/TO3P 用于400W的产品FQA28N50 （MOSFET）500V/28.4A/310W/0.126Ω/TO3P 用于400W的产品FQL40N50 （MOSFET）500V/40A/560W/0.085Ω/TO264 用于560W的产品IRF740B （MOSFET）400V/10A/0.55Ω/134W/TO220IRF730B （MOSFET）400V/5.5A/1.0Ω/73W/TO220IRF830B （MOSFET）500V/4.5A/1.5Ω/73W/TO220IRF840B （MOSFET）500V/8A/0.85Ω/134W/TO220IRFP450B （MOSFET）500V/14A/0.4Ω/205W/TO3PIRFP460C （MOSFET）500V/20A/0.2~0.24Ω/235WFQPF5N60C （MOSFET）600V/5A/TO220FFQPF8N60C （MOSFET）600V/8A/TO220FFQPF10N60C （MOSFET）600V/10A/TO220FQPF12N60 （MOSFET）600V/12A/51W/0.65Ω/TO220FFCP11N60 （MOSFET）650V/11A/125W0.32Ω/TO220RHRD660S （快恢复二极管）600V/6A/TO-252RHRP860 （快恢复二极管）600V/8A/75W/TO-220RHRP1560 （快恢复二极管）600V/15A/TO-220单2N7002 （三极管）60V/0.12A/SOT-23 HUF76629D3S （MOSFET）100V/20A/110W/TO-252HUF75639S3S （MOSFET）100V/56A/200W/TO-263ISL9V3040D3S （IGBT）430V/21A/150W/300MJ/TO252ISL9V3040S3S （IGBT）430V/21A/150W/300MJ/TO263ISL9V5036S3S （IGBT）360V/46A/250W/TO262FQP33N10L （MOSFET）100V/33A/52MΩ127W/TO220000000000000。
2N4401-D
t, TIME (ns)
100 70 50
30 20
10 7.0 5.0
10
tr tf
VCC = 30 V IC/IB = 10
20 30 50 70 100
200 300 500
IC, COLLECTOR CURRENT (mA)
Figure 6. Rise and Fall Times
t, TIME (ns)
100 70 50
30 20
10 7.0 5.0
10
IC/IB = 10
tr @ VCC = 30 V tr @ VCC = 10 V td @ VEB = 2.0 V td @ VEB = 0
20 30 50 70 100
200 300 500
IC, COLLECTOR CURRENT (mA)
Figure 5. Turn−On Time
CS* < 10 pF
+16 V
0 -14 V
1.0 to 100 ms, DUTY CYCLE ≈ 2.0%
1.0 kW < 20 ns
+ 30 V 200 W
CS* < 10 pF
Figure 1. Turn−On Time
Scope rise time < 4.0 ns
- 4.0 V
*Total shunt capacitance of test jig connectors, and oscilloscope
2N4401G
TO−92 (Pb−Free)
5000 Units / Bulk
2N4401RLRA
TO−92
2000 / Tape & Reel
SMT名词辞典
18 ESDS Item----------------------------靜電放電敏感元件Electrostatic Discharge Sensitive Item
19 Fuse-------------------------------------------------------------------------------------------------保險絲
30 Oscillator--------振盪器. 與晶體﹝Crystal﹞原理相同為一通電後產生高頻震盪之元件
31 PBGA-----------------------------------------------------------------------塑膠球型格點陣列構裝Plastic Ball Grid Array. 封裝材質或承載基材為塑膠的BGA元件
SMT名詞辭典 NEW (2009-08-01 15:29:20)转载标签： 电子行业-sm Anti-Static Material--------------抗靜電材料.能抑制摩擦生電至200V以下的材料(EIA 625)
2 AOI-----------------------------------------------------自動視覺檢查Automatic Optical Inspection
26 LCD---------------------------------------------------------------------------------------液晶顯示Liquid Crystal Display. 在兩片間隙約5~6μm之薄玻璃板間填充液態晶格，並在外部利用電路交叉驅動晶格扭曲，使光線導通以顯示文字或圖案的顯示幕方式稱之。
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NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
Max
*MMBT4401 350 2.8 357
Units
mW mW/°C °C/W °C/W
Байду номын сангаас
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1997 Fairchild Semiconductor Corporation
2N4401 / MMBT4401
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
-4
SWITCHING CHARACTERISTICS
td tr ts tf Delay Time Rise Time Storage Time Fall Time VCC = 30 V, VEB = 0.2 V, IC = 150 mA, IB1 = 15 mA VCC = 30 V, IC = 150 mA IB1 = IB2 = 15 mA 15 20 225 30 ns ns ns ns
ON CHARACTERISTICS*
hFE DC Current Gain IC = 0.1 mA, VCE = 1.0 V IC = 1.0 mA, VCE = 1.0 V IC = 10 mA, VCE = 1.0 V IC = 150 mA, VCE = 1.0 V IC = 500 mA, VCE = 2.0 V IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA 20 40 80 100 40
V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Base Cutoff Current Collector Cutoff Current IC = 1.0 mA, IB = 0 IC = 0.1 mA, IE = 0 IE = 0.1 mA, IC = 0 VCE = 35 V, VEB = 0.4 V VCE = 35 V, VEB = 0.4 V 40 60 6.0 0.1 0.1 V V V A A
*Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%
TA = 25°C unless otherwise noted
Parameter
Value
40 60 6.0 1.0 -55 to +150
Units
V V V A °C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
PD RθJC RθJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N4401 625 5.0 83.3 200
300 0.4 0.75 0.95 1.2 V V V V
VCE(sat) VBE(sat)
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage
0.75
SMALL SIGNAL CHARACTERISTICS
fT Ccb Ceb hie hre hfe hoe Current Gain - Bandwidth Product Collector-Base Capacitance Emitter-Base Capacitance Input Impedance Voltage Feedback Ratio Small-Signal Current Gain Output Admittance IC = 20 mA, VCE = 10 V, f = 100 MHz VCB = 5.0 V, IE = 0, f = 140 kHz VBE = 0.5 V, IC = 0, f = 140 kHz IC = 1.0 mA, VCE = 10 V, f = 1.0 kHz IC = 1.0 mA, VCE = 10 V, f = 1.0 kHz IC = 1.0 mA, VCE = 10 V, f = 1.0 kHz IC = 1.0 mA, VCE = 10 V, f = 1.0 kHz 250 6.5 30 1.0 0.1 40 1.0 15 8.0 500 30 mhos MHz pF pF k x 10
2N4401 / MMBT4401
Discrete POWER & Signal Technologies
2N4401
MMBT4401
C
E C B
TO-92
E
SOT-23
Mark: 2X
B
NPN General Purpose Amplifier
This device is designed for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. See PN2222A for characteristics.