irfp4332pbf

IRFP4332PbFNotes through are on page 9DescriptionThis HEXFET ® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low E PULSE rating. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.Featuresl Advanced Process Technologyl Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low E PULSE Rating to Reduce PowerDissipation in PDP Sustain, Energy Recovery and Pass Switch Applications l Low Q G for Fast Responsel High Repetitive Peak Current Capability for Reliable Operationl Short Fall & Rise Times for Fast Switching l 175°C Operating Junction Temperature for Improved Ruggednessl Repetitive Avalanche Capability for Robustness and ReliabilityPDP SWITCHTO-247ACSDGDPD - 97100BIRFP4332PbF= 50V = 0V eIRFP4332PbFFig 6. Typical E PULSE vs. Drain CurrentFig 5. Typical E PULSE vs. Drain-to-Source VoltageFig 3. Typical Transfer CharacteristicsFig 4. Normalized On-Resistance vs. TemperatureGST J , Junction Temperature (°C)V DS, Drain-to -Source Voltage (V)E n e r g y p e r p u l s e (µJ )I D, Peak Drain Current (A)E n e r g y p e r p u l s e (µJ )IRFP4332PbFFig 11. Maximum Drain Current vs. Case Temperature Fig 8. Typical Source-Drain Diode Forward VoltageFig 12. Maximum Safe Operating AreaFig 7. Typical E PULSE vs.TemperatureFig 10. Typical Gate Charge vs.Gate-to-Source VoltageFig 9. Typical Capacitance vs.Drain-to-Source Voltage0200400600800100012001400E n e r g y p e r p u l s e (µJ )1101001000V DS , Drain-to-Source Voltage (V)0200040006000800010000C , C a p a c i t a n c e (p F )4080120160Q G Total Gate Charge (nC)048121620V G S , G a t e -t o -S o u r c e V o l t a g e (V )255075100125150175T J , Junction Temperature (°C)0102030405060I D , D r a i n C u r re n t (A )V SD , Source-to-Drain Voltage (V)0.11101001000I S D , R e v e r s e D r a i n C u r r e n t (A )1101001000V DS , Drain-to-Source Voltage (V)0.11101001000I D , D r a i n -t o -S o u r c e C u r r e n t (A)IRFP4332PbFFig 17. Maximum Effective Transient Thermal Impedance, Junction-to-CaseFig 15. Threshold Voltage vs. TemperatureFig 14. Maximum Avalanche Energy Vs. TemperatureFig 13. On-Resistance Vs. Gate VoltageFig 16. Typical Repetitive peak Current vs.Case temperatureV GS , Gate-to-Source Voltage (V)0.300.40e s i s t a n c e (Ω)255075100125150175Starting T J , Junction Temperature (°C)02004006008001000E A S , S i n g l e P u l s e A v a l a n c h e E n e r g y (m J )T J , Temperature ( °C )V G S (t h ) G a t e t h r e s h o l d V o l t a g e (V )255075100125150175Case Temperature (°C)020406080100120140160180R e p e t i t i v e P e a k C u r r e n t (A)t 1 , Rectangular Pulse Duration (sec)T h e r m a l R e s p o n s e ( Z )IRFP4332PbFFig 19b. Unclamped Inductive WaveformsFig 19a. Unclamped Inductive Test CircuitI ASV DDFig 20a. Gate Charge Test CircuitFig 20b. Gate Charge WaveformIdQgs1Qgs2QgdQgodrDSCurrent Sampling ResistorsFig 18. Diode Reverse Recovery Test Circuit for HEXFET ® Power MOSFETs*** V GS = 5V for Logic Level DevicesUse P-Channel Driver for P-Channel Measurements ** Reverse Polarity for P-ChannelADRDUData and specifications subject to change without notice.This product has been designed and qualified for the Industrial market.Qualification Standards can be found on IR’s Web site.IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105TAC Fax: (310) 252-7903Visit us at for sales contact information . 12/2009Notes:Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25°C, L = 0.35mH, R G = 25Ω, I AS = 35A. Pulse width ≤ 400µs; duty cycle ≤ 2%.R θ is measured at T J of approximately 90°C. Half sine wave with duty cycle = 0.25, ton=1µsec.Applicable to Sustain and Energy Recovery applications.TO-247AC Part Marking InformationLead Assignments 1- Gate 2- Drain 3- Source。