AOD4187中文资料

Symbol V DS V GSI DMI AR E AR SymbolTyp Max 15204150R θJC2 2.5T =70°CContinuous Drain T C =25°C I DSM T C =100°CP D T C =100°C I D Continuous Drain Parameter T C =25°C T C =100°C Maximum Junction-to-Ambient A D Steady-State Avalanche CurrentCPower DissipationAT A =25°C P DSM °C/W Absolute Maximum Ratings T A =25°C unless otherwise noted Pulsed Drain Current CPower DissipationBT C =25°C Gate-Source Voltage Drain-Source Voltage Maximum Junction-to-CaseSteady-State°C/WThermal CharacteristicsParameterUnits Maximum Junction-to-Ambient A t ≤ 10s R θJA °C/W Repetitive avalanche energy L=0.1mH CAOD4187P-Channel Enhancement Mode Field Effect Transistor= -10V) = -10V) = -4.5V) 100% UIS Tested! 100% Rg Tested!General DescriptionThe AOD4187 uses advanced trench technology and DSGD-PAKTop ViewSBottom ViewDGSSymbolMin TypMaxUnits BV DSS -40V -1T J =55°C -5I GSS ±100nA V GS(th)-1.7-1.9-3V I D(ON)-100A1417T J =125°C 21261823g FS 40S V SD -0.7-1V I S-50A C iss 196023502850pF C oss 185240320pF C rss 130185260pF R g2 5.511ΩQ g (-10V)354250nC Q g (-4.5V)162025nC Q gs 5.5 6.68nC Q gd 79.714nC t D(on)9.6ns t r 29ns t D(off)56ns t f 19.2ns t rr 141721ns Q rr404960nC COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICEBody Diode Reverse Recovery TimeBody Diode Reverse Recovery Charge I F =-12A, dI/dt=500A/µsDrain-Source Breakdown Voltage On state drain currentI D =-250µA, V GS =0V V GS =-10V, V DS =-5V V GS =-10V, I D =-12AReverse Transfer Capacitance I F =-12A, dI/dt=500A/µsElectrical Characteristics (T J =25°C unless otherwise noted)STATIC PARAMETERS ParameterConditions I DSS µA Gate Threshold Voltage V DS =V GS I D =-250µA V DS =-40V, V GS =0VV DS =0V, V GS = ±20V Zero Gate Voltage Drain Current Gate-Body leakage current Forward Transconductance Diode Forward VoltageR DS(ON)Static Drain-Source On-ResistanceMaximum Body-Diode Continuous CurrentInput Capacitance Output CapacitanceDYNAMIC PARAMETERS I S =-1A,V GS =0VV DS =-5V, I D =-12A V GS =-4.5V, I D =-8Am ΩTurn-On Rise Time Turn-Off DelayTime V GS =-10V, V DS =-20V, R L =1.6Ω,R GEN =3ΩTurn-Off Fall TimeTurn-On DelayTime Total Gate Charge Gate Drain Charge V GS =0V, V DS =-20V, f=1MHz SWITCHING PARAMETERS Gate Source Charge Gate resistanceV GS =0V, V DS =0V, f=1MHzTotal Gate Charge V GS =-10V, V DS =-20V, I D =-12AA: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows i t.B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used.C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. Ratings are based on low frequency and duty cycles to keepinitial T J =25°C.D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175°C.The SOA curve provides a single pulse rating.G. The maximum current rating is limited by bond-wires.H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C.*This device is guaranteed green after data code 8X11 (Sep 1ST 2008). Rev 1: Oct-2008VdsChargeGate Charge Test Circuit & WaveformVddVdsIdVgsUnclamped Inductive Switching (UIS) Test Circuit & Waveforms2E = 1/2 LI AR ARBV DSSI ARVdd VddResistive Switching Test Circuit & Waveforms。