AON7406中文资料

Symbol
Typ Max 30406075R θJC 4 4.5Steady-State
Maximum Junction-to-Ambient A Steady-State °C/W
Thermal Characteristics Parameter
Units Maximum Junction-to-Ambient A t ≤ 10s R θJA °C/W °C/W Maximum Junction-to-Case D
AON7406
Pin 1
Symbol
Min Typ Max Units BV DSS 30
V
1T J =55°C
5I GSS ±100
nA V GS(th)1 1.6
3V I D(ON)
50
A 12.515T J =125°C
17.5211923.5
g FS 19S V SD 0.73
1V I S
3
A C iss 955
1200
pF C oss 145pF C rss 112pF
R g
0.50.85ΩQ g (10V)17
24nC Q g (4.5V)912
nC Q gs 3.4nC Q gd 4.7nC t D(on)5
ns t r 6ns t D(off)19ns t f 4.5ns
t rr 1925
ns Q rr
9
nC
150COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Drain-Source Breakdown Voltage On state drain current
I D =250µA, V GS =0V V GS =10V, V DS =5V V DS =30V, V GS =0V
V DS =0V, V GS = ±20V Zero Gate Voltage Drain Current Gate-Body leakage current I DSS µA Body Diode Reverse Recovery Charge I F =11A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
V GS =10V, I D =11A
Reverse Transfer Capacitance I F =11A, dI/dt=100A/µs
Gate Threshold Voltage V DS =V GS I D =250µA Electrical Characteristics (T J =25°C unless otherwise noted)STATIC PARAMETERS Parameter
Conditions R DS(ON)Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage Maximum Body-Diode Continuous Current
Input Capacitance Output Capacitance DYNAMIC PARAMETERS V GS =4.5V, I D =8.5A
I S =1A,V GS =0V V DS =5V, I D =10A
m ΩTurn-On Rise Time Turn-Off DelayTime V GS =10V, V DS =15V, R L =1.5Ω, R GEN =3Ω
Turn-Off Fall Time
Turn-On DelayTime Gate Drain Charge V GS =0V, V DS =15V, f=1MHz SWITCHING PARAMETERS Total Gate Charge Gate Source Charge Gate resistance
V GS =0V, V DS =0V, f=1MHz
Total Gate Charge V GS =10V, V DS =15V, I D =10A
A: The value of R θJA is measured with the device mounted on 1in 2
FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t ≤ 10s junction to ambient thermal resistance rating.
G.The maximum current rating is limited by bond-wires.Rev1: Nov 2007。