ESD5V3U1U-02LRH中文资料
VISHAY TVS和ESD保护 说明书
Tr a n s Z o r b®雪崩T V S PA R®汽车T V S特殊功能瞬态电压抑制器E S D保护器件Vishay 的TransZorb®瞬态电压抑制器（TVS ）采用了目前最先进的技术，可提供业界最大的电压范围。
此设计允许雪崩击穿二极管TVS 在较短时间内吸收大量能量而不被损坏。
Vishay 的TransZorb TVS 没有耗损机制，具有足够快的导通时间和极佳的箝位特性。
TransZorb ® 雪崩 TVS注解：(1) 利用10/1000 μs 脉冲进行测量(2) 部件编号中，"xx" 代表V WM ， "nn" 代表标称电压(3) 部件编号中"nn"表示标称电压，"xx"或（m ）脚注表示最低电压。
目前正在计划实现更高的电压指标（可达600 V ）。
请与当地销售商联系确定产品信息(4) 双向极性用后缀"C"或"CA"来表示（BZW04使用后缀"B"）(5) 大部分TVS 产品取得了UL 标准497B 下保护器类别（QVGQ2）的认证，且单向和双向器件都采用文件号E136766。
具体信息请参考各自的数据手册。
瞬态电压抑制器Vishay 的汽车瞬态电压抑制器（TVS ）利用了PAR®专利技术，相比于其他雪崩TVS 二极管，其可在更大的温度范围内（可达185 oC ）表现出极佳的稳定性和功率处理能力。
本产品组合包含了专门用于负载突降浪涌保护的器件，封装类型有轴向和表面贴装两种。
注解：(1) 利用10/1000 μs 脉冲进行测量(2) 部件编号中，"xx" 代表V WM ， "nn" 代表标称电压(3) 部件编号中”nn ”表示标称电压，”xx ”表示最小电压 (5) 所有汽车TVS 都仅为单向极性(6) 所有汽车TVS 都利用PAR 专利工艺技术实现优越的高温性能(7) 大部分TVS 产品取得了UL 标准497B 下保护器类别（QVGQ2）的认证，且单向和双向器件都采用文件号E136766。
ESD预防
材料的静电性能的参数有哪些？物体带电的多少常用静电电荷量和静电电压表示，而测量材料如塑料、橡胶、防静电地板（面）、地毯等的防静电性能通常用电阻，电阻率、体积电阻率、表面电阻率、电荷（或电压）半衰期、静电电容、介电常数等。
但最常用最可靠的还是电阻及电阻率。
电子器件所能承受静电破坏的静电电压从上表可见大部分器件的静电破坏电压都在几百至几千伏，而在干燥的环境中人活动所产生的静电可达几千伏到几万伏。
为什么要提要ESD防护意识在本世纪70前代以前，很多静电问题都是由于人们没有ESD意识而造成的，即使现在也有很多人怀疑ESD会对电子产品造成损坏。
这是因为大多数ＥＳＤ损害发生在人的感觉以下,因为人体对静电放电的感知电压约为3ＫＶ，而许多电子元件在几百伏甚至几十伏时就会损坏，通常电子器件被ＥＳＤ损坏后没有明显的界限，把元件安装在PCB上以后再检测，结果出现很多问题，分析也相当困难。
特别是潜在损坏，即使用精密仪器也很难测量出其性能有明显的变化，所以很都电子工程师和设计人员都怀疑ESD，近年但实验证实，这种潜在损坏在一定时间以后，电子产品的可靠性明显下降。
电子工业的静电问题是如何的产生的?静电是时时刻刻到处存在的，但是在二十世纪40－50年代很少有静电问题，因为那时是晶体三极管和二极管，而所产生静电也不如现在普遍存在。
在60年代，随着对静电非常敏感的ＭＯＳ器件的出现，静电问题也出现了，到70年代静电问题越来越来严重。
80－90年代，随着集成电路的密度越来越大，一方面其二氧化硅膜的厚度越来越薄（微米－纳米），其承受的静电电压越来越低，另一方面，产生和积累静电的材料如塑料，橡胶等大量使用，使得静电越来越普遍存在，仅美国电子工业每年因静电造成的损失达几百亿美圆，因此静电防护已成为电子工业的隐形杀手。
是电子工业普遍存在的＂硬病毒＂，在某个时刻内外因条件具备时就要发作。
静电对电子产品损害有哪些形式?静电的基本物理特性为：吸引或排斥，与大地有电位差，会产生放电电流。
ESD5V3U1U系列单方向超低电容ESD 瞬态保护扬声器说明书
ESD5V3U1U02LSE6327XTSA1ESD5V3U1U02LRHE6327XTSA1TVS DiodesTransient Voltage Suppressor DiodesESD5V3U1U SeriesUni-directional Ultra-Low Capacitance ESD / Transient Protection Diode ESD5V3U1U-02LSESD5V3U1U-02LRHData SheetRevision 1.0, 2011-05-27FinalEdition 2011-05-27Published byInfineon Technologies AG81726 Munich, Germany© 2011Infineon Technologies AGAll Rights Reserved.Legal DisclaimerThe information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.InformationFor further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ().WarningsDue to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office.Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.ESD5V3U1U SeriesRevision HistoryPage or Item Subjects (major changes since previous revision)Revision 1.0, 2011-05-27Trademarks of Infineon Technologies AGAURIX™, BlueMoon™, COMNEON™, C166™, CROSSAVE™, CanPAK™, CIPOS™, CoolMOS™, CoolSET™, CORECONTROL™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, EUPEC™, FCOS™, HITFET™, HybridPACK™, ISOFACE™, I²RF™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OmniTune™, OptiMOS™, ORIGA™, PROFET™, PRO-SIL™, PRIMARION™, PrimePACK™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SMARTi™, SmartLEWIS™, TEMPFET™, thinQ!™, TriCore™, TRENCHSTOP™, X-GOLD™, XMM™, X-PMU™, XPOSYS™.Other TrademarksAdvance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, PRIMECELL™, REALVIEW™, THUMB™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Sattelite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited.Last Trademarks Update 2010-06-09ESD5V3U1U SeriesTable of Contents Table of ContentsTable of Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4 List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1Uni-directional Ultra-Low Capacitance ESD / Transient Protection Diode . . . . . . . . . . . . . . . . . . 7 1.1Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 1.2Application Examples . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2Product Description. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3.1Electrical Characteristics at T A = 25 °C, unless otherwise specified . . . . . . . . . . . . . . . . . . . . . . . . . . 83.2Typical Characteristics at T A=25°C, unless otherwise specified . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4Application Information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 5Ordering Information Scheme (Examples) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6Package Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 6.1PG-TSSLP-2-1 (mm)[3] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 6.2PG-TSLP-2-7 (mm)[3] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18Terminology . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20ESD5V3U1U SeriesList of Figures List of FiguresFigure 1Pin Configuration and Schematic Diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Figure 2Definitions of Electrical Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Figure 3Reverse current I R = f(T A) , V R = 5.3 V, from pin 1 to pin 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Figure 4Line capacitance C L = f(V R), f = 1MHz, from pin 1 to pin 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Figure 5Line capacitance C L = f(f), from pin 1 to pin 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Figure 6Line capacitance C L = f(T A), from pin 1 to pin 2. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Figure 7Clamping voltage V TLP = f(I TLP), from pin 1 to pin 2[1]. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Figure 8Forward clamping voltage V TLP = f(I TLP), from pin 2 to pin 1[1] . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Figure 9IEC61000-4-2: V CL = f(t), 8 kV positive pulse from pin 1 to pin 2. . . . . . . . . . . . . . . . . . . . . . . . . . 13 Figure 10IEC61000-4-2: V CL = f(t), 8 kV negative pulse from pin 1 to pin 2 . . . . . . . . . . . . . . . . . . . . . . . . . 13 Figure 11IEC61000-4-2: V CL = f(t), 15 kV positive pulse from pin 1 to pin 2. . . . . . . . . . . . . . . . . . . . . . . . . 14 Figure 12IEC61000-4-2: V CL = f(t), 15 kV negative pulse from pin 1 to pin 2 . . . . . . . . . . . . . . . . . . . . . . . . 14 Figure 13Single line, uni-directional ESD / Transient protection[2]. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Figure 14Ordering information scheme. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Figure 15PG-TSSLP-2-1: Package overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 Figure 16PG-TSSLP-2-1: Footprint. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Figure 17PG-TSSLP-2-1: Packing. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Figure 18PG-TSSLP-2-1: Marking (example) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 Figure 19PG-TSLP-2-7: Package Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18 Figure 20PG-TSLP-2-7: Footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Figure 21PG-TSLP-2-7: Packing. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Figure 22PG-TSLP-2-7: Marking (example) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18ESD5V3U1U SeriesList of Tables List of TablesTable 1Ordering Information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Table 2Maximum Rating at T A = 25 °C, unless otherwise specified. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Table 3DC Characteristics at T A = 25 °C, unless otherwise specified . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Table 4RF Characteristics at T A = 25 °C, unless otherwise specified . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Table 5ESD Characteristics at T A = 25 °C, unless otherwise specified . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9ESD5V3U1U SeriesUni-directional Ultra-Low Capacitance ESD / Transient Protection Diode1Uni-directional Ultra-Low Capacitance ESD / Transient Protection Diode1.1Features•ESD / Transient protection of high speed data lines exceeding –IEC61000-4-2 (ESD): ±20 kV (air / contact)–IEC61000-4-4 (EFT): 2.5 kV / 50 A (5/50 ns)–IEC61000-4-5 (surge): 3 A (8/20 μs)•Maximum working voltage: V RWM = 5.3 V •Ultra low capacitance: C L = 0.4 pF (typical)•Low clamping voltage, low dynamic resistance R DYN = 0.6 Ω (typical)•Very small form factor down to 0.62 x 0.32 x 0.31 mm 3•Pb-free (RoHS compliant) and halogen free package1.2Application Examples•USB 2.0, Mobile HDMI Link, MDDI, MIPI, etc.•HDMI, DisplayPort, DVI, Ethernet, Firewire, S-ATA2Product DescriptionTable 1Ordering InformationTypePackage Configuration Marking codeESD5V3U1U-02LSPG-TSSLP-2-11 line, uni-directional L ESD5V3U1U--02LRH PG-TSLP-2-7 1 line, uni-directionalE5ESD5V3U1U SeriesCharacteristics3Characteristics3.1Electrical Characteristics at T A = 25 °C, unless otherwise specifiedTable 2Maximum Rating at T A = 25 °C, unless otherwise specifiedParameterSymbolValues UnitMin.Typ.Max.ESD (air / contact) discharge 1)1)V ESD according to IEC61000-4-2V ESD ––20kV Peak pulse current (t p = 8/20 μs)2)2)I PP according to IEC61000-4-5I PP ––3A Operating temperature range T OP -55–125°C Storage temperatureT stg-65–150°CTable 3DC Characteristics at T A = 25 °C, unless otherwise specifiedParameterSymbolValues UnitNote /Test Condition Min.Typ.Max.Reverse working voltage V RWM –– 5.3V Pin 1 to Pin 2Breakdown voltage V BR 6––V I BR = 1 mA, from Pin 1to Pin 2Reverse currentI R–<10100nA V R = 5.3 V, from Pin 1to Pin 2ESD5V3U1U SeriesCharacteristicsTable 4RF Characteristics at T A = 25 °C, unless otherwise specifiedParameterSymbolValues UnitNote /Test ConditionMin.Typ.Max.Line capacitance 1)1)Total capacitance line to groundC L –0.40.6pF V R = 0 V, f = 1 MHzSerie inductanceL S–0.2–nH ESD5V3U1U-02LS –0.4–nHESD5V3U1U-02LRHTable 5ESD Characteristics at T A = 25 °C, unless otherwise specifiedParameterSymbolValues UnitNote /Test ConditionMin.Typ.Max.Clamping voltageV CL –19–V I PP = 16 A,from Pin 1 to Pin 2–28–V I PP = 30 A,from Pin 1 to Pin 2Forward clamping voltage V FC–10–V I PP = 16 A,from Pin 2 to Pin 1–17–V I PP = 30 A,from Pin 2 to Pin 1Dynamic resistance 1)1)Please refer to Application Note AN210[1]. TLP parameter: Z 0 = 50 Ω , t p = 100ns, t r = 300ps, averaging window: t 1 = 30 ns to t 2 = 60 ns, extraction of dynamic resistance using least squares fit of TLP charactertistics between I PP1 = 10 A and I PP2 = 40 A.R DYN–0.6–VPin 1 to Pin 2–0.5–V Pin 2 to Pin 13.2Typical Characteristics at T A=25°C, unless otherwise specifiedR A RL RLL ATLP TLPTLP TLPCLCLCLCLApplication Information 4Application InformationApplication_ESD5V3U1U-02xxx.vsdFigure 13Single line, uni-directional ESD / Transient protection[2]Ordering Information Scheme (Examples)5Ordering Information Scheme (Examples)Figure 14Ordering information schemeESDXX = Pin number (i.e.: 02 = 2 pins; 03 = 3 pins)YY = Package family:LS = TSSLP LRH = TSLP S = SOT363U = SC74XX = Application family :LC = Low Clamp HDMIni-/ B i-directional or R ail to R ail protection V RWM in V: (i.e.: 5V3 = 5.3V)ESD XX = Pin number (i.e.: 02 = 2 pins; 03 = 3 pins)YY = Package family:LS = TSSLP LRH = TSLPR adio F requency ApplicationsC L in pF: (i.e.: 0P1 = 0.1pF)umber of protected lines (i.e.: 1 = 1 line ; 4 = 4 lines)S tandard (>10pF), L ow (<10pF), U ltra-low (<1pF)6Package Information6.1PG-TSSLP-2-1 (mm)[3]Figure 15PG-TSSLP-2-1: Package overviewFigure 16PG-TSSLP-2-1: FootprintFigure 17PG-TSSLP-2-1: PackingFigure 18PG-TSSLP-2-1: Marking (example)TSSLP-2-1,-2-PO V05+0.010.311) Dimension applies to plated terminalmarkingBottom viewTop viewCopper Solder maskStencil aperturesTSSLP-2-1,-2-FP V026.2PG-TSLP-2-7 (mm)[3]Figure 19PG-TSLP-2-7: Package OverviewFigure 20PG-TSLP-2-7: FootprintFigure 21PG-TSLP-2-7: PackingFigure 22PG-TSLP-2-7: Marking (example)TSLP 27PO V02+0.01markingBottom view Top viewTSLP-2-7-FP V01CopperSolder mask Stencil aperturesTSLP-2-7-TP V03ESD5V3U1U SeriesTerminology TerminologyCLine capacitanceLDVI Digital Visual InterfaceEFT Electrical Fast TransientESD Electrostatic DischargeHDMI High Definition Multimedia InterfaceIEC International Electrotechnical CommissionIPeak pulse currentPPIReverse currentRIMaximum Reverse working CurrentRWMLSerial inductanceSMDDI Mobile Display Digital InterfaceMIPI Mobile Industrial Processor InterfaceRoHS Restriction of Hazardous Substances DirectiveS-ATA Serial Advanced Technology AttachmentTAmbient temperatureATOperation temperatureOPtPulse durationpTStorage temperaturestgUSB Universal Serial BusVBreakdown VoltageBRVReverse clamping voltageCLVElectrostatic discharge voltageESDVForward Clamping VoltageFCVReverse voltageRVMaximum Reverse Working VoltageRWMESD5V3U1U SeriesReferencesReferences[1]Infineon AG - Application Note AN210: Effective ESD Protection Design at System Level Using VF-TLP[2]Infineon AG - Application Note AN140: ESD Protection for Digital High-Speed Interfaces (HDMI, FireWire,...) using ESD5V3U1U)[3]Infineon AG - Recommendations for PCB Assembly of Infineon TSLP and TSSLP PackageFinal Data Sheet20Revision 1.0, 2011-05-27w w w.i n f i n e o n.c o m Published by Infineon Technologies AGESD5V3U1U02LSE6327XTSA1ESD5V3U1U02LRHE6327XTSA1。
ESD-LU综述
耐ESD阈值V
30~1800 100~200 100~300
100 250~2000
50~500 200~1000 300~2500
140~1000
680~1000 300~2500 380~7000 300~3000 380~7000 300~3000
<10000
5
备注
有保护网络 极耦合逻辑电路 晶闸管
level)
ANSI/ESDA/JEDEC JS-001-
ISO 10605
2014
(Unpowered /
Powered)
Component Level:
ANSI/ESD STM5.2-2012
ANSI/ESD SP5.2.1-2012
ANSI/ESD SP5.2.2-2012
Component Level:
Internal Use
ESD测试
0
Copyright © ABC Inc. All rights reserved.
静电特点
可感受的ESD电压都在3,000volts以上
可感受的ESD电压都在6,000volts以上 可看到的ESD电压都在8,000volts以上
1
Internal Use
潜在性:有些元器件在损伤后并不马上表现出来， 只是性能下降，并不马上失效；
板
級 ▪ Board-level ESD (Human Metal Model, HMM) – 針對PCBA的新測試標準 (ANSI/ESD SP5.6-2009)
Internal Use
由外而内放電 由外而内放電 由内而外放電
由内而外放電 由外而内放電 由外而内放電
6
6
优恩半导体ESD静电保护器目录表
Part Number (Reference) ESD3.3V52D-A ESD05V52D-A ESD08V52D-A ESD12V52D-A ESD15V52D-A ESD24V52D-A ESD05V52D-C ESD12V52D-CInternal ConfigurationVrwm(V) 3.3 5 8 12 15 24 5 9Vbrmin(V)CJMAX 1MHz(pF) 200 110 70 60 50 25 10 5 450 200 30 100 75 50Peak Power Ir@Vrwm 8/20 µ s (µA) 120 120 120 120 120 120 100 100 320 320 100 320 320 320 200 5 5 5 5 5 1 1 40 10 1 1 1 1SOD-5234 6 8.5 13.3 16.6 26.7 6 10.2 4 6 6 13.3 16.7 26.7SOD-523 ESD03V32D-C ESD05V32D-C ESD0501V32D-C ESD12V32D-C ESD15V32D-C ESD24V32D-C 3 5 5 12 15 24SOD-323ESD3.3V32D-LA ESD05V32D-LA SOD-323 ESD03V32D-LC ESD05V32D-LC ESD08V32D-LC ESD12V32D-LC ESD15V32D-LC ESD24V32D-LC3.3 5.04 60.4 0.4350 35020 5SOD-3233.0 5.0 8.0 12.0 15.0 24.04.0 6.0 8.5 13.3 16.7 26.71.2 1.2 1.2 1.2 1.2 1.2350 350 350 350 350 35020 5 2 1 1 1ESD05V14TLC SOT-1435.06.01.23005Part Number (Reference) ESD03V23T-2A ESD05V23T-2A ESD05V23T-2AL ESD08V23T-2A ESD12V23T-2A ESD15V23T-2A ESD24V23T-2A ESD36V23T-2AInternal ConfigurationVrwm(V) 3.3 5.0 5.0 8.0 12.0 15.0 24.0 36.0Vbrmin(V)CJMAX 1MHz(pF) 400 300 30 250 150 100 88 60Peak Power Ir@Vrwm 8/20 µ s (µA) 300 300 100 300 300 300 300 300 100 10 0.1 1 1 1 1 1SOT-234.0 6.0 6.0 8.5 13.3 16.7 26.7 40.0ESD05V23T-2L SOT-23 Pin 3 to Pin1/Pin2 SM712 Pin 3 to Pin1/Pin2 ESD3.3V23T-1A ESD05V23T-1A ESD08V23T-1A ESD12V23T-1A ESD15V23T-1A ESD24V23T-1A ESD36V23T-1A SOT-235.06.01350177.555400107 3.3 5.0 8.0 12.0 15.0 24.0 36.013.3 4.0 6.0 8.5 13.3 16.7 24.0 40.055 5 5 5 5 5 5 5400 500 500 500 500 500 500 5001 40 5 5 1 1 1 1SOT-23SLVU2.8 SOT-232.83.034001ESD05V26T-4 SOT-265.06.01.23501Part Number (Reference) ESD05V26T-4L ESD12V26T-4L ESD15V26T-4L ESD24V26T-4LInternal ConfigurationVrwm(V)Vbrmin(V)CJMAX 1MHz(pF) 200 90 70 50Peak Power Ir@Vrwm 8/20 µ s (µA) 350 350 350 350 5 1 1 15.0 12.0 15.0 24.0 SOT-266.0 13.3 16.7 26.7ESD05V26T-5L ESD12V26T-5L ESD15V26T-5L ESD24V26T-5L SOT-265.0 12.0 15.0 24.06.0 13.3 16.7 26.7200 90 70 50350 350 350 3505 1 1 1ESD05V36T-4L SOT-3635.06.021501ESD05V36T-5L SOT-3635.06.0501001ESD05V56T-2L SOT-5635.06.00.9501ESD05V56T-4L SOT-5635.06.0301001ESD05V56T-5L SOT-5635.06.0301001Part Number (Reference)Internal ConfigurationVrwm(V)Vbrmin(V)CJMAX 1MHz(pF)Peak Power Ir@Vrwm 8/20 µ s (µA)ESD12V56T-2C SOT-5639.010.031001SLVU2.8-4 SO-082.83.024005SLVU2.8-8 SO-08 ESD06V08S-4L SO-082.83.0560056.06.825200020ESD05V08S-4L SO-08 LCDA05C-4 LCDA12C-4 LCDA15C-4 LCDA24C-45.06.0550010SO-085.0 12.0 15.0 24.06.0 13.3 16.7 26.75 5 5 5500 500 500 50020 1 1 1LCDA05C-8 LCDA12C-8 LCDA15C-8 LCDA24C-8 SO-165.0 12.0 15.0 24.06.0 13.3 16.7 26.75 5 5 5500 500 500 50020 1 1 1Part Number (Reference)Internal ConfigurationVrwm(V)Vbrmin(V)CJMAX 1MHz(pF)Peak Power Ir@Vrwm 8/20 µ s (µA)ESD05VDFN-C DFN10065.06.0101001ULC0524P DSON-105.06.00.81501ULC0528P5.06.50.52000.5MSOP-08ESD05V10S-4L MSOP-105.06.00.51251Cell Phone CCD Camera LinesEE0504K LWSON-085.06.020Color LCD Protection Clamshell Cell Phones0.5Cell Phone CCD Camera LinesESD0506K5.06.020Color LCD Protection Clamshell Cell Phones0.5LWSON-12Part Number (Reference)Internal ConfigurationVrwm(V)Vbrmin(V)CJMAX 1MHz(pF)Peak Power Ir@Vrwm 8/20 µ s (µA)Cell Phone CCD Camera LinesEE0508K5.06.020Color LCD Protection Clamshell Cell Phones0.5LWSON-16EE0508DFN5.06.0171DFN3014Differential Mode vs. Common Mode4345256162 of 211232011/3/31Curves of CharacterizationBAV99 vs TVS ARRAYS直接將突波導入到 Vcc -- 這種方式非 非 常不安全, 易導致 Vcc損害.直接將突波導入到 GND -- 這種方式非 非 常安全. 因為接地 區域有較大阻抗可 以分散突波.4 of 212011/3/31Parasitic InductanceESD ProtectorESD Protector不妥當的方式 : 無法將保護元件直接貼 在信號線上. 會產生寄 生電感. 造成保護能力 被寄生的電感減弱.安全的方式 : 將保護元件直接貼在信 號線上. 讓保護能力全 力發揮.Fine Layout vs Parasitic InductanceFine Layout -- Without Parasitic InductanceNOT recommation -- Parasitic Inductance7 of 212011/3/31Anti-Parasitic Inductance直接將保護ESD保護能力元件貼在信號線上--不會產生寄生電感問題.可以完全發揮8 of 212011/3/31Anti-Parasitic Inductance3-PIN產品的應用9 of 212011/3/31USB 3.0 Interface ProtectionMSOP-0810 of 212011/3/31HDMI Interface ProtectionSLP2510P8(2.5x1.0x0.5mm)11 of 212011/3/31USB 3.0 Interface Protection12 of 212011/3/31GR-1089 Lighting Protection for T-Carrier Interface13 of 212011/3/3110/1000 Gigabit Ethernet Protection14 of 212011/3/31。
ESD5B5.0ST1G中文资料
© Semiconductor Components Industries, LLC, 2006November, 2006 − Rev. 11Publication Order Number:ESD5B5.0ST1/DESD5B5.0ST1G Transient Voltage SuppressorBi−directional Micro−Packaged Diode for ESD ProtectionThe ESD5B Series is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage,and fast response time provide best in class protection on designs that are exposed to ESD. Because of its small size and bi−directional design, it is ideal for use in cellular phones, MP3 players, and portable applications that require audio line protection.Specification Features•Small Body Outline Dimensions: nom 0.063″ x 0.032″(1.6x0.8 mm)•Low Body Height: nom 0.024″ (0.6 mm)•Reverse Working (Stand−off) V oltage: 5.0 V •Peak Power up to 50 W @ 8 x 20 m s Pulse •Low Leakage•Response Time is Typically < 1 ns•ESD Rating of Class 3 (> 16 kV) per Human Body Model •IEC61000−4−2 Level 4 ESD Protection •This is a Pb−Free DeviceMechanical CharacteristicsCASE: V oid-free, transfer-molded, thermosetting plasticEpoxy Meets UL 94 V−0LEAD FINISH: 100% Matte Sn (Tin)MOUNTING POSITION: AnyQUALIFIED MAX REFLOW TEMPERATURE: 260°CDevice Meets MSL 1 RequirementsMAXIMUM RATINGSRatingSymbolValue Unit IEC 61000−4−2 (ESD)Contact±30kV ESD VoltagePer Human Body ModelPer Machine Model16400kVV Peak Power (Figure 1)Per 8 x 20 m s Waveform Peak Power (Figure 2)Per 10 x 1000 m s Waveform P PK 5010W Total Power Dissipation on FR−5 Board (Note 1) @ T A = 25°CP D 200mW Junction and Storage Temperature Range T J , T stg −55 to +150°C Lead Solder Temperature − Maximum (10 Second Duration)T L 260°CStresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.1.FR−5 = 1.0 x 0.75 x 0.62 in.Device Package Shipping †ORDERING INFORMATION†For information on tape and reel specifications,including part orientation and tape sizes, please refer to our T ape and Reel Packaging Specifications Brochure, BRD8011/D.ESD5B5.0ST1GSOD−523(Pb−Free)3000/Tape & Reel2ELECTRICAL CHARACTERISTICS(T A = 25°C unless otherwise noted)Symbol ParameterI PP Reverse Peak Pulse Current V C Clamping Voltage @ I PP V RWM Working Peak Reverse Voltage I R Reverse Leakage Current @ V RWM V BR Breakdown Voltage @ I T I TTest CurrentELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted, V F = 0.9 V Max. @ I F = 10 mA for all types)Device*V RWM (V)I R (m A)@ V RWM V BR (V) @ I T (Note 2)I T C (pF) @ V R = 0 V,f = 1 MHzMax Max Min Max mA Typ ESD5B5.0ST1G5.01.05.87.81.032*Other voltages available upon request.2.V BR is measured with a pulse test current I T at an ambient temperature of 25°C.Figure 1. 8 x 20 m s Pulse Waveform 1009080706050403020100t, TIME (m s)% O FP E A K P U L S E C U R R E N Tt, TIME (ms)Figure 2. 10 x 1000 m s Pulse WaveformFigure 3. Positive 8 kV Contact per IEC 6100−4−2ESD5B5.0ST1G Figure 4. Negative 8 kV Contact per IEC 6100−4−2ESD5B5.0ST1GPACKAGE DIMENSIONSSOD−523CASE 502−01ISSUE BNOTES:1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.2.CONTROLLING DIMENSION: MILLIMETER.3.MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.DIM MIN NOM MAX MILLIMETERS A 1.10 1.20 1.30B 0.700.800.90C 0.500.600.70D 0.250.300.35J 0.070.140.20K 0.150.200.25S1.50 1.60 1.700.0430.0470.0510.0280.0320.0350.0200.0240.0280.0100.0120.0140.00280.00550.00790.0060.0080.0100.0590.0630.067MINNOM MAX INCHES *For additional information on our Pb−Free strategy and solderingdetails, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.SOLDERING FOOTPRINT*ǒmm inchesǓSCALE 10:1ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.PUBLICATION ORDERING INFORMATION。
单路单向TVS管WE05D9中文资料.doc
（二）
来源
替换型号；SES5VD923-2U 9C5.0ST5G P5V0S1UL uClamp0501P DF2S5.6FS(TPL3)
DF2S6.8FSCDZC6.8
电子产品使用者很少有机会接触到产品内部的元器件及电路板，因此不需严格的防护措施，但这并不意味着的问题不存在——首先，可以输入/输出连接器（如USB接口、充电器接口、SIM卡插槽等）为路径进入电路中的各种元件；其次，随着电子产品，特别是消费电子产品向着轻薄化发展，导致内部的外形尺寸不断减小，其自身防护能力亦不断减弱。
所以，工程师在设计时通常加入保护器件，而很多内部也有片上保护电路。
电子产品轻薄化的发展趋势使其对防护要求越来越高，MLV渐渐有些力不从心，二极管则开始崭露头角。
通常并联于被保护电路，当瞬态电压超过电路的正常工作电压时，二极管发生雪崩，为瞬态电流提供通路，使内部电路免遭超额电压的击穿或超额电流的过热烧毁。
当瞬时脉冲结束以后，二极管自动回复高阻状态，整个回路进入正常电压。
由于二极管的结面积较大，使得它具有泄放瞬态大电流的优点，具有理想的保护作用。
型号品牌替代型号封装价格 Wayon 9C5.0ST5G SOD-9230.071
Wayon MSMF05LC-P SOT-563 0.115
Wayon 9B5.0ST5G SOD-923 0.0705
Wayon SMF05CT1 SOT-563 0.115
类：
音箱类：
手机类：
液晶电视类：LED照明类：
石英晶振：保护/：P类：
其它类：
Flash类：
来源。
ESDA5V3L中文资料
50
Fig. 5: Relative variation of leakage current versus junction temperature (typical values).
Fig. 6: Peak forward voltage drop versus peak forward current (typical values).
BENEFITS High ESD protection level : up to 25 kV. High integration. Suitable for high density boards. COMPLIES WITH THE FOLLOWING STANDARDS : IEC61000-4-2 level 4 MIL STD 883C-Method 3015-6 : class 3. (human body model)
125
0.01 0.0
0.5
1.0
1.5
2.0
2.5
3.03.54.0源自4/6元器件交易网
ESDAxxL
1. ESD protection by the ESDAxxL Electrostatic discharge (ESD) is a major cause of failure in electronic systems. Transient Voltage Suppressors (TVS) are an ideal choice for ESD protection. They are capable of clamping the incoming transient to a low enough level such that damage to the protected semiconductor is prevented. Surface mount TVS arrays offer the best choice for minimal lead inductance. They serve as parallel protection elements, connected between the signal line to ground. As the transient rises above the operating voltage of the device, the TVS array becomes a low impedance path diverting the transient current to ground. The ESDAxxL array is the ideal board level protection of ESD sensitive semiconductor components. The tiny SOT23 package allows design flexibility in the design of high density boards where the space saving is at a premium. This enables to shorten the routing and contributes to hardening againt ESD.
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Parameter
Symbol
Values
Unit
Characteristics Reverse working voltage Breakdown voltage I(BR) = 1 mA, from pin 1 to 2 Reverse current VR = 5.3 V, from pin 1 to 2 Clamping voltage IPP = 1 A, tp = 8/20 µs2), from pin 1 to 2 IPP = 3 A, tp = 8/20 µs2), from pin 1 to 2 Forward clamping voltage IPP = 1 A, tp = 8/20 µs2), from pin 2 to 1 IPP = 3 A, tp = 8/20 µs2), from pin 2 to 1 Line capacitance3) VR = 0 V, f = 1 MHz Series inductance ESD5V3U1U-02LS ESD5V3U1U-02LRH
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party.
1±0.05
ESD5V3U1U...
0.275
0.925
0.35 0.35
0.3
1
0.275 0.375
Copper Solder mask
Marking Layout (Example)
Stencil apertures
BAR90-02LRH Type code
Cathode marking Laser marking
2
2008-07-14
元器件交易网
ESD5V3U1U...
Clamping voltage, Vcl = ƒ(Ipp) tp = 8 / 20 µs, from pin 1 to 2
Forward clamping voltage VFC = ƒ(IPP) tp = 8 / 20 µs, from pin 2 to 1
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( ).
4
0.35
0.73 8
Cathode
0.43
marking
7
2008-07-14
元器件交易网
ESD5V3U1U...
Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved.
ESD5V3U1U...
ESD5V3U1U-02LS ESD5V3U1U-02LRH
2
1
Type ESD5V3U1U-02LRH ESD5V3U1U-02LS
Package TSLP-2-7 TSSLP-2-1
Configuration 1 line, uni-directional 1 line, uni-directional
1
Marking E5 L
2008-07-14
元器件交易网
ESD5V3U1U...
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Value
Unit
ESD (air / contact) discharge1) Peak pulse current (tp = 8 / 20 µs)2)
Line capacitance CT = ƒ(TA) VR = 0 V, f = 1 MHz
0.6
0.7
pF pF
CT CT
0.4
VR=0V
VR=5.3V 0.3
0.2
0.1
0
0
500 1000 1500 2000 MHz 3000
f
0.5 5.3 V
0.4 0V
0.3
0.2
0.1
0
-50 -25
Package TSSLP-2-1
ESD5V3U1U...
0.355 ±0.025 0.2 ±0.0251)
0.62 ±0.035
Package Outline
2 1
Top view
0.31
+0.01 -0.02
Bottom view 0.32 ±0.035
2
1
Cathode marking
0.26±0.025 1)
1
0.5 ±0.035 1)
1) Dimension applies to plated terminal
0.25 ±0.0351)
Foot Print
For board assembly information please refer to Infineon website "Packages" 0.6 0.45
A
5
Ipp
0.6 pF
CT
0.4 0.3 0.2 0.1
10 -11
25
50
75
100
°C
150
TA
0
0
1
2
3
V
5
VR
3
2008-07-14
元器件交易网
ESD5V3U1U...
Line capacitance CT = ƒ (f) VR = parameter, from pin 1 to 2
min. typ. max.
VRWM V(BR) IR VCL
VFC
CT
-
-
5.3 V
6
-
-
- < 10 100 nA
V
-
10 13
-
12 15
-
2
4
-
4
6
-
0.4 0.6 pF
LS
nH
-
0.2
-
-
0.4
-
1VESD according to IEC61000-4-2 2Ipp according to IEC61000-4-5 3Total capacitance line to ground
1) Dimension applies to plated terminal
Foot Print
For board assembly information please refer to Infineon website "Packages" 0.32 0.27
0.62 0.24
0.24 0.14
ESD5V3U1U...
5
2008-07-14
元器件交易网
Package TSLP-2-7
Package Outline
2 1
Top view
0.39
+0.01 -0.03
0.05 MAX.
Bottom view 0.6 ±0.05
2
0.65 ±0.05
Cathode marking
1
ESD sensitive
I/O
device
The protection diode should be placed very close to the location where the ESD or other transients can occur to keep loops and inductances as small as possible. Pin 2 should be connected directly to a ground plane on the board. 2
VESD Ipp
20
kV
3
A
Operating temperature range
Top
-55...125
°C
Storage temperature
Tstg
-65...150
Electrical Characteristics at TA = 25°C, unless otherwise specified
13
6
V V
11
Vcl
10
98Leabharlann 7601