FDN337N

A S
DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note)
300 145 35
pF pF pF
SWITCHING CHARACTERISTICS Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
(Note)
30 41 1 10 100 -100
V mV/ oC µA µA nA nA
∆BVDSS/∆TJ
IDSS
VGS = 8 V,VDS = 0 V VGS = -8 V, VDS = 0 V VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25 oC VGS = 4.5 V, ID = 2.2 A TJ =125°C VGS = 2.5 V, ID = 2 A 0.4 0.7 -2.3 0.054 0.08 0.07 10 13
7
TJ = -55°C 125°C
I S , REVERSE DRAIN CURRENT (A)
V DS = 5.0V
ID , DRAIN CURRENT (A) 6 5 4 3 2 1 0
25°C
4 2 0.5 0.1
VGS = 0V TJ = 125°C 25°C -55°C
0.01
0.001
0
Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Zero Gate Voltage Drain Current VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25 oC VDS = 24 V, VGS = 0 V TJ = 55°C IGSSF IGSSR VGS(th) Gate - Body Leakage, Forward Gate - Body Leakage, Reverse
Ω
ID(ON) gFS Ciss Coss Crss tD(on) tr tD(off) tf Qg Qgs Qgd IS VSD
Note:
On-State Drain Current Forward Transconductance
VGS = 4.5 V, VDS = 5 V VDS = 5 V, ID = 2.2 A VDS = 10 V, VGS = 0 V, f = 1.0 MHz
SOT-23
SuperSOTTM-6
SuperSOTTM-8
SO-8
SOT-223
SOIC-16
D
D
3
37
S
SuperSOT -3
TM
G
G
S
Absolute Maximum Ratings
Symbol VDSS VGSS ID PD TJ,TSTG RθJA RθJC Parameter Drain-Source Voltage
6 I D , DRAIN-SOURCE CURRENT (A) 5 4 3 2
3.0 2.5 2.0
R DS(ON ) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE
VGS = 4.5V
1.8 1.6 1.4
VGS = 2.0V
1.5
2 1 0
2.5
1.2 1 0.8
0.5 V
GS
1 1.5 2 , GATE TO SOURCE VOLTAGE (V)
2.5
0.0001
0
0.2
0.4
0.6
0.8
1
VSD , BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
FDN337N Rev.C
DRAIN-SOURCE ON-RESISTANCE
ID = 2.2A
1.4
R DS(ON) , ON-RESISTANCE (OHM)
1.6 R DS(ON) , NORMALIZED
0.25
I D = 1.1A
0.2
VGS = 4.5 V
1.2
0.15
1
0.1
125°C 25°C
0.8
0.05
0.6 -50
TM
Features
2.2 A, 30 V, RDS(ON) = 0.065 Ω @ VGS = 4.5 V RDS(ON) = 0.082 Ω @ VGS = 2.5 V. Industry standard outline SOT-23 surface mount package using proprietary SuperSOTTM-3 design for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability.
Typical Electrical Characteristics (continued)
5 VGS , GATE-SOURCE VOLTAGE (V)
1000
I D = 2.2A
4
VDS = 5V
CAPACITANCE (pF)
500
15V 10V
Ciss
200
3
Coss
100 50
2
1
20 0.1
TA = 25oC unless other wise noted FDN337N 30 ±8 2.2 10
(Note 1a) (Note 1b)
Units V V A
Gate-Source Voltage - Continuous Drain/Output Current - Continuous - Pulsed Maximum Power Dissipation
March 1998
FDN337N N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
SuperSOT -3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
f = 1 MHz VGS = 0V
0.2 V DS 0.5 1 2 5
Crss
10 20
0
0
2
4 Q g , GATE CHARGE (nC)
6
8
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
VDD = 5 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Ω
4 10 17 4
10 18 28 10 9
ns ns ns ns nC nC nC
VDS = 10 V, ID = 2.2 A, VGS = 4.5 V
7 1.1 1.9
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.42 A
a. 250oC/W when mounted on 0.02 in2 pad of 2oz Cu.
a
b. 270oC/W when mounted on a 0.001 in2 pad of 2oz Cu.
FDN337N Rev.C
Typical Electrical Characteristics
3.0 3.5 4.5
0
0.3
0.6
0.9
1.2
1.5
0
1
VDS , DRAIN-SOURCE VOLTAGE (V)