FDC6310P_NL中文资料

6 RDS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE V GS =- 4.5V 5 -I D, DRAIN CURRENT (A) -3.5V 4 -3.0V -2.5V 2.75 2.5 2.25 2 1.75 1.5 1.25 1 0.75 0 0.5 1 1.5 2 2.5 0 1 2 3 4 5 6 -ID , DRAIN CURRENT (A) -2.5V -3.0V -3.5V -4.5V V GS = -2.0V
a) 130 °C/W when mounted on a 0.125 in2 pad of 2 oz. copper.
b) 140°/W when mounted on a .004 in2 pad of 2 oz copper
c) 180°/W when mounted on a minimum pad.
Parameter
Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse
1.2
1
0.8
0.6 -50 -25 0 25 50 75 100 125 150 T J, JUNCTION TEMPERATURE ( oC)
Figure 3. On-Resistance Variation with Temperature.
5 -IS, REVERSE DRAIN CURRENT (A) V DS = -5V 4 -ID, DRAIN CURRENT (A) TA = -55o C 125o C 25oC
Tape width 8mm
Quantity 3000 units
FDC6310P Rev C(W)
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FDC6310P
Electrical Characteristics
Symbol
BV DSS ∆BV DSS ∆TJ IDSS IGSSF IGSSR
TA = 25°C unless otherwise noted
IS V SD Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward Voltage V GS = 0 V, IS = –0.8 A
(Note 2)
–0.8 0.77 –1.2
A V
Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
3 -2.0V 2 -1.8V 1
0 -V DS , DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
(Note 2)
Test Conditions
V GS = 0 V, ID = –250 µA ID = –250 µA, Referenced to 25°C V DS = –16 V, V GS = 0 V V GS = 12 V, V DS = 0 V V GS = –12 V, V DS = 0 V V DS = V GS , ID = –250 µA ID = –250 µA, Referenced to 25°C V GS = –4.5 V, ID = –2.2 A V GS = –2.5 V, ID = –1.8 A V GS =–4.5 V, ID =–2.2 A, TJ =125°C V GS = –4.5 V, V DS = –5 V, V DS = –5 V ID = –3.5 A
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100 V GS = 0V 10 1 0.1 T A = 125o C 25oC -55o C
3
2
0.01 0.001 0.0001
1
0 0.5 1 1.5 2 2.5 3 -V GS, GATE TO SOURCE VOLTAGE (V)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µ s, Duty Cycle < 2.0%
FDC6310P Rev C(W)பைடு நூலகம்
元器件交易网
FDC6310P
Typical Characteristics
Features
• –2.2 A, –20 V. RDS(ON) = 125 mΩ @ V GS = –4.5 V RDS(ON) = 190 mΩ @ V GS = –2.5 V • Low gate charge • Fast switching speed • High performance trench technology for extremely low RDS(ON) • SuperSOT TM -6 package: small footprint 72% smaller than standard SO-8); low profile (1mm thick)
Min
–20
Typ Max Units
V –11 –1 100 –100 mV/°C µA nA nA
Off Characteristics
On Characteristics
V GS(th) ∆V GS(th) ∆TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance On–State Drain Current Forward Transconductance
(Note 2)
V DS = –10 V, f = 1.0 MHz
V GS = 0 V,
337 88 51
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge
–0.6
–1.0 3 100 145 137
–1.5
V mV/°C
125 190 184
mΩ
ID(on) gFS
–6 6
A S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
V DD = –10 V, V GS = –4.5 V,
ID = –1 A, RGEN = 6 Ω
9 12 10 5
18 22 20 10 5.2
ns ns ns ns nC nC nC
V DS = –10 V, V GS = –4.5 V
ID = –2.2 A,
3.7 0.65 1.3
Drain–Source Diode Characteristics and Maximum Ratings
Symbol
V DSS V GSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed
Parameter
Ratings
–20 ±12
(Note 1a)
Units
V V A W
–2.2 –6 0.96 0.9 0.7 –55 to +150
0.4
1.6 RDS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = -2.2A VGS = -4.5V 1.4
ID = -2.2 A RDS(ON) , ON-RESISTANCE (OHM) 0.35 0.3 0.25 0.2 TA = 125o C 0.15 0.1 T A = 25o C 0.05 1 2 3 4 5 -V GS, GATE TO SOURCE VOLTAGE (V)