embedded static random access memory for field programmable gate array_1998
sram半导体概念
sram半导体概念英文回答：SRAM (static random-access memory) is a volatile memory that stores data in memory cells consisting of a flip-flop circuit with two stable states. The flip-flop stores the data bit, while the access transistors allow the memorycell to be read or written to. SRAM is faster and more power-efficient than DRAM (dynamic random-access memory), but it is also more expensive and requires more transistors per bit of data stored.SRAM is typically used in applications where speed and low power consumption are important, such as caches, registers, and embedded systems. It is also used in some high-performance computing applications where the cost and size of the memory are not as critical.The main advantages of SRAM over DRAM are its speed and low power consumption. SRAM can be accessed much fasterthan DRAM, and it does not require periodic refreshing to maintain the data stored in the memory cells. This makes SRAM ideal for applications where data needs to be accessed quickly and frequently.The main disadvantages of SRAM over DRAM are its cost and size. SRAM is more expensive to manufacture than DRAM, and it requires more transistors per bit of data stored. This makes SRAM less suitable for applications where cost and size are critical.中文回答：SRAM（静态随机存取存储器）是一种易失性存储器，它将数据存储在由具有两种稳定状态的触发器电路组成的存储器单元中。
计算机组成原理第四章部分课后题答案（唐朔飞版）
计算机组成原理第四章部分课后题答案（唐朔飞版）4.1 解释概念：主存、辅存、Cache、RAM、SRAM、DRAM、ROM、PROM、EPROM、EEPROM、CDROM、Flash Memory。
主存：⽤于存放数据和指令，并能由中央处理器直接随机存取，包括存储器体M、各种逻辑部件、控制电路等辅存：辅助存储器，⼜称为外部存储器（需要通过I/O系统与之交换数据）。
存储容量⼤、成本低、存取速度慢，以及可以永久地脱机保存信息。
主要包括磁表⾯存储器、软盘存储器、磁带存储设备、光盘存储设备。
Cache：⾼速缓冲存储器，⽐主存储器体积⼩但速度快，⽤于保有从主存储器得到指令的副本很可能在下⼀步为处理器所需的专⽤缓冲器。
RAM：(Random Access Memory)随机存储器。
存储单元的内容可按需随意取出或存⼊，且存取的速度与存储单元的位置⽆关的存储器。
这种存储器在断电时将丢失其存储内容，故主要⽤于存储短时间使⽤的程序。
按照存储信息的不同，随机存储器⼜分为静态随机存储器（StaticRAM,SRAM)和动态随机存储器（Dynamic RAM,DRAM)。
SRAM：(Static Random Access Memory)它是⼀种具有静⽌存取功能的内存，不需要刷新电路即能保存它内部存储的数据。
DRAM：(Dynamic Random Access Memory)，即动态随机存取存储器最为常见的系统内存。
DRAM 只能将数据保持很短的时间。
为了保持数据，DRAM使⽤电容存储，所以必须隔⼀段时间刷新（refresh）⼀次，如果存储单元没有被刷新，存储的信息就会丢失。
（关机就会丢失数据）ROM：只读内存（Read-Only Memory）的简称，是⼀种只能读出事先所存数据的固态半导体存储器。
其特性是⼀旦储存资料就⽆法再将之改变或删除。
通常⽤在不需经常变更资料的电⼦或电脑系统中，资料并且不会因为电源关闭⽽消失。
PROM：(Programmable Read-Only Memory)－可编程只读存储器，也叫One-Time Programmable (OTP)ROM“⼀次可编程只读存储器”，是⼀种可以⽤程序操作的只读内存。
《计算机专业英语》习题参考答案
《计算机专业英语》习题参考答案Lesson 1I.1. Operating System2. Fetch-evaluate-execute3. Front-side bus4. Dual-core processor5. Basic Input/Output System(BIOS)II.1. 指令是特定各式的二进制数列，它们对于每台机器都是唯一的。
2. CPU是中央处理单元的简称，每个字母分开发音。
3. 大多数计算在中央处理器中进行。
4. 双核是指一个处理器上有两个完整运算内核的CPU。
5. 处理器：是微处理器或CPU的缩写。
6. 集成电路：即芯片，是由半导体材料制成的一种电子设备。
III.1. F2. T3. TIV.1.ALU, CU, Register2.memory3.processor4.the CPULesson 2I.1.Static Random Access Memory(SRAM)2.Dynamic Random Access Memory(DRAM)3.Virtual Memory4.Physical Memory5.Level 1 Cache6.Level 2 Cache7.HDD access speedII.1.动态随机存储器之所以称为“动态”是因为它每秒钟被刷新数千次。
2.RAM：是计算机中存储操作系统、应用程序和当前正是用数据的地方。
3.ROM由计算机中一小块长寿命电池供电。
4.RAM缓存是由高速静态随机存储器构成的存储器。
III.1. F2. F3. F4. TIV.1. non-volatile2. compiler3. volatile4. DRAMLesson 3I.1. Motherboard2. PC Case3. Hard Disk Drive(HDD)4. Optical mouse5. RAM6. Mobile DiskII.1.PC是有很多组件构成的一个系统。
半导体材料英文缩略语
[材料科学] 半导体材料英文缩略语材料科学2008-03-24 16:18:46 阅读37 评论0 字号：大中小订阅援引：MEMC Electronic Materials, Inc.A. -- AngstromA-defects -- Dislocation loops in Silicon formed by agglomeration of interstitialsAA -- Atomic absorptionAE -- Acid EtchAFM -- Atomic Force MicroscopyALCVD -- Atomic Layer Chemical Vapor DepositionAMC -- Barrel or batch type Epi reactor (Applied Materials)APCVD -- Atmospheric-Pressure Chemical Vapor Deposition Furnace ASIC -- Application Specific Integrated CircuitASM -- a single-chamber Epi reactor (ASM America)ASTM -- American Standard Test MethodASTM -- American Society for Testing and MaterialsBBESOI -- Bonded and Etch Back SOIBGSOI -- Bonded and Grind Back SOIBJT -- Bipolar Junction TransistorBMD -- Bulk Micro-Defects or Bulk Microdefect Density (used almost exclusivelyas a measure of the oxygen precipitate density)BOE -- Buffered Oxide EtchBOX -- Buried Oxide LayerBP -- Backside PolishBV -- Breakdown VoltageBvox -- Breakdown Voltage-oxideC°C -- Centigrade°C/min -- Centigrade per minuteCD -- Critical DimensionCE -- Caustic Etchcm -- Centimeter (0.01 meter)CMOS -- Complementary Metal Oxide SemiconductorCMP -- Chemical Mechanical PolishingCO -- Carbon MonoxideCO2 -- Carbon DioxideCOO -- Cost of OwnershipCOP’s -- Crystal Originated ParticlesCoQC -- Certificate Of Quality ConformanceCP -- Crystal PullerCV -- Capacity or capacitance voltageCVD -- Chemical Vapor DepositionCZ -- Czochralski method of pulling single crystalDD-defects -- Very small voids in Silicon formed by agglomeration of vacanciesDIBL -- Drain Induced Barrier LoweringDIC -- Differential Interference ContrastDL -- Diffusion LengthDMOS -- Double-diffused MOSDOE -- Design of ExperimentsDOF -- Depth of FocusDRAM -- Dynamic Random Access MemoryDSOD – Direct Surface Oxide DefectDSP -- Double Sided PolishDZ -- Denuded Zone (depth measured from the surface that is free of oxygenprecipitates and which is denuded of interstitial oxygen (byout-diffusion))EeDRAM -- Embedded Dynamic Random Access MemoryEG -- Enhanced GetteringEEPROM -- Electrically-erasable and Programmable Read-only MemoryEPROM -- Erasable and Programmable Read-only MemoryEOT -- Equivalent Oxide ThicknessEPI -- EpitaxyESF -- Epi Stacking FaultFFBE -- Floating Body EffectFET -- Field Effect TransistorFD-SOI -- Fully Depleted Silicon-on-InsulatorFPD -- Flow Pattern Defect (ref. Crystal)FPD -- Focal Plane Deviation (ref. Mechanical flatness)FRAM -- Ferroelectric Random Access MemoryFTIR -- Fourier Transform Infra-Red SpectroscopyFZ -- Float Zone method of Crystal PullingGGBIR -- Global flatness, back-referenced GeOI -- Germanium-on-InsulatorGFA -- Gas Fusion AnalysisGOI -- Gate Oxide IntegrityGTIR -- Global Total Indicated Reading GUI -- Graphical User InterfaceHH2 -- Hydrogen gasH2O2 -- Hydrogen PeroxideHCl -- Hydrogen ChlorideHF -- Hydrofluoric AcidHMOS -- High-performance MOSHZ -- Hot ZoneIIC -- Integrated CircuitsIDM -- Integrated Device ManufacturerIG -- Internal GetteringIGBT -- Insulated Gate Bipolar Transistor IQC -- Incoming Quality ControlISO -- International Standards Organization ITOX -- Internal OxidationJFET -- Junction Field Effect TransistorKkg -- KilogramkN -- Kilo NewtonKOH -- Potassium HydroxidekP -- Kilo PascalKSIE -- Thousand Square Inch EquivalentLLAD -- Large Area DefectLg -- Transistor Gate LengthLLS -- Localized Light ScatterersLLPD’s -- Large Light Point DefectsLPCVD -- Low Pressure Chemical Vapor DepositionLPD’s -- Light Point DefectsLPD-E -- Light Point Defect, class E (a KLA-Tencor SP1 defect class) LPD-N -- Light Point Defect, class N (a KLA-Tencor SP1 defect class) LPD-S -- Light Point Defect, class S (a KLA-Tencor SP1 defect class) LPE -- Liquid Phase EpitaxyLSE -- Latex Sphere Equivalent particle sizeLSI -- Large-scale IntegrationLSTD -- Laser Scattering Tomographic DetectionLTO -- Low Temperature OxideM9K -- MEMC proprietary polishing machineMBE -- Molecular Beam EpitaxyMDZ -- Magic Denuded Zone (gettering)MEMS -- Micro-ElectroMechanical SystemMIM -- Metal-Insulator-MetalMLD -- Modified Low Dosemm -- 1/1000 of a meter and 0.03937 inchmm/min -- millimeters per minuteMNOS -- Metal Nitride Oxide SemiconductorMOCVD -- MetalOrganic Chemical Vapor Deposition MODFET -- Modulation-Doped Field Effect TransistorMOS -- Metal Oxide SemiconductorMOSFET -- Metal Oxide Semiconductor Field Effect Transistor MRAM -- Magnetoresistive Random Access MemoryMSI -- Medium-scale IntegrationMSIE -- Million Square Inch EquivalentNN -- Silicon doped to create excess negative charge carriers (electrons)N+ -- Heavily doped, N-type siliconNT -- NanotopographyN2 -- Nitrogen gasnm -- nanometersNMOS -- N-channel Metal Oxide SemiconductorNPT -- Non-Punch ThroughO2 -- OxygenOi -- Interstitial OxygenOISF -- Oxidation-Induced Stacking FaultOPP -- Optical Precipitate ProfilerOUM -- Ovonics Unified MemoryPP -- Silicon doped to create excess positive charge carriers (holes)P- -- Lightly doped P-type silicon waferP+ -- Heavily doped P-type silicon waferP/P+ -- Lightly doped P-type epi layer on a heavily doped P-type substrateP/P- -- Lightly doped P-type epi layer on a lightly doped P-type substrateP-band -- Anomalous oxygen precipitation region in vicinity of the vacancy/interstitial boundaryPD-SOI -- Partially Depleted Silicon-on-InsulatorPECVD -- Plasma Enhanced Chemical Vapor Deposition Furnace PFRAM -- Polymeric Ferroelectric Random Access MemoryPFZ -- Precipitate Free Zone (depth measured from the surface that is free ofoxygen precipitates but not necessarily depleted in interstitial oxygen) PMOS -- P-channel Metal Oxide SemiconductorPPB -- Parts Per BillionPPC -- Post Polish CleanPPE -- Personal Protective EquipmentPPM -- Parts Per MillionPPMA -- Parts Per Million AtomicPPMD -- Parts Per Million DefectivePPT -- Parts Per TrillionPROM -- Programmable Read-only MemoryPT -- Punch ThroughP/V -- Peak to Valley measurementPZT -- Lead Zirconate TitanateQRRAM -- Random Access MemoryRF -- Radio FrequencyRFCMOS -- Radio-Frequency Complementary Metal Oxide SemiconductorROM -- Read-only MemoryRSD -- Raised Source/DrainRTA -- Rapid Thermal AnnealRTP -- Rapid Thermal ProcessSSAC -- Submicron Application CrystalSBIR -- Site flatness, back-referencedSBSD -- Soft Backside DamageSC1 -- 1st cleaning bath in the standard “RCA clean” sequence, consisting ofNH4OH / H202/ H20 solution designed to remove particles from Si surfaceSC2 –2nd cleaning bath in the standard “RCA clean” sequence, consisting ofHCl / H202/ H20 solution designed to remove metals from Si surfaceSCE -- Short Channel EffectsSEM -- Scanning Electron MicroscopeSFQR -- Site flatness, best-fit, front-referencedSFSR -- Site flatness, best-fit, front-referenced, scanning siteSGOI – Strained Si on SiGe on InsulatorSi -- SiliconSIE -- Square Inch EquivalentSIMOX -- Separation by Implantation of OxygenSIMS -- Secondary Ion Mass SpectroscopySiO -- Silicon MonoxideSiO2 -- Silicon DioxideSIP -- Single In-line PackageSIRM -- Scanning Infra-red MicroscopeSoC -- System-on-a-ChipSOI -- Silicon-on-InsulatorSOS -- Silicon-on-SapphireSPT -- Soft Punch ThroughSPV -- Surface PhotovoltageSRAM -- Static Random Access MemorySRP -- Spreading Resistance Probe or Spreading Resistance Profile SSI -- Small-scale IntegrationsSi -- Strained SiliconSSIS -- Surface Scanning Inspection SystemSSOI -- Strained Silicon directly on InsulatorSSP -- Single Side PolishSTD -- StandardSTD CZ -- Standard Czochralski-grown CrystalSTI -- Shallow Trench IsolationSTIR -- Site TIR (Total Indicated Reading)TT -- TemperatureTCS -- TrichlorosilaneTEM -- Transmission Electron MicroscopeTIR -- Total Indicated ReadingTOX -- Gate Oxide ThicknessTsoi -- Thickness of SOI top Si layerTSOP -- Thin Small Outline PackageTTV -- Total Thickness VariationUULSI -- Ultra Large-scale IntegrationVv/G -- v: growth rate (crystal pulling rate), G: vertical temperature gradient atmelt/solid interfaceVI -- Vacancy InterstitialVLSI -- Very Large-scale IntegrationVPE -- Vapor Phase EpitaxyWWRFTIR -- Whole Rod Fourier Transform Infra-Red Spectroscopy XXTL -- CrystalZZD -- Zero Dislocation。
psram使用方法
psram使用方法PSRAM (pseudo-static random access memory) is a type of memory that combines the high-speed characteristics of static random access memory (SRAM) with the high-density capabilities of dynamic random access memory (DRAM). PSRAM is commonly used in embedded systems, such as mobile phones, digital cameras, and printers, where both speed and density are crucial factors for performance. PSRAM provides a good balance between speed and density, making it an attractive choice for memory-intensive applications.PSRAM使用了类似DRAM的行模式刷新，但仍然保留了SRAM的高速特性。
这使得它在嵌入式系统中得到了广泛应用，特别是在对内存速度和密度要求较高的应用中。
PSRAM可以提供快速的数据读写速度，同时还具有较高的密度，这使得它适用于各种内存密集型的应用。
One of the key advantages of PSRAM is its ability to retain data without the need for constant refreshing, like traditional DRAM. This reduces the power consumption and enables a more efficient use of the memory, making it an ideal choice for battery-operated devices.Additionally, PSRAM has a non-volatile nature, which means it can retain data even when the power is turned off, further enhancing its suitability for a wide range of applications.PSRAM最大的优势之一就是不需要像传统的DRAM那样不断刷新来保持数据，这降低了功耗，使得内存使用更加高效，特别适用于电池供电的设备。
《计算机英语》课后习题答案
《计算机英语》参考答案Chapter 11.(1) 中央处理器(Central Processing Unit)(2) 随机访问内存(Random-access Memory)(3) 美国国际商用机器公司(International Business Machine)(4) 集成电路(Integrated Circuit)(5) 大规模集成电路(Large Scale Integration)(6) 超大规模集成电路(Very Large Scale Integration)(7) 个人数字助理(Personal Digital Assistant)(8) 图形用户界面(Graphical User Interface)2.(1) data(2) software(3) IC(4) ENIAC(5) supercomputer(6) superconductivity3.(1) F (ENIAC is the second digital computer after Atanasoff-Berry Computer)(2) T(3) F (Data is a unorganized)(4) T(5) T(6) T4.(1) 人工智能(2) 光计算机(3) 神经网络(4) 操作系统(5) 并行处理(6) vacuum tube(7) integrated circuit(8) electrical resistance(9) silicon chip(10) minicomputer5.数据是未经组织的内容的集合，数据可以包括字符、数字、图形和声音。
计算机管理数据，并将数据处理生成信息。
向计算机输入的数据称为输入，处理的结果称为输出。
计算机能在某一个称为存储器的地方保存数据和信息以备后用。
输入、处理、输出和存储的整个周期称为信息处理周期。
与计算机交互或使用计算机所产生信息的人称为用户。
1.(1) 发光二极管(Light-Emitting Diode)(2) 静态随机存储器(Static Random Access Memory)(3) 只读存储器(Read Only Memory)(4) 运算器(Arithmetic and Logical Unit)(5) 阴极射线管(Cathode Ray Tube)(6) 视频显示单元(Visual Display Unit)(7) 可编程只读存储器(Programmable Read Only Memory)(8) 液晶显示屏(Liquid Crystal Display)2.(1) CPU(2) peripheral(3) memory(4) modem(5) control unit(6) byte3.(1) T(2) T(3) F (RAM is volatile memory because the information within the computer chips is erased as soon as the computer is powered off whereas ROM is nonvolatile)(4) T(5) T(6) F (Microphones and digital cameras are input devices)4.(1) 寄存器组(2) 主机(3) 二进制的(4) 算法(5) 光盘(6) CD-RW(7) logic operation(8) barcode(9) peripheral device(10) volatile memory5.计算机的内存可被视为一系列的单元，可以在单元中存取数字。
电子信息科学类专业必备英语单词
access: 读写；接入active: 有源的；有效的adaptor: 适配器address: 地址addressing: 寻址aerial: 天线* algorithm: 算法Ampere: 安培amplify: 放大* amplifier: 放大器amplitude: 幅度analog: 模拟的analog-to-digital converter: 模数转换器 * antenna: 天线array: 阵列assembly: 组件assembly language: 汇编语言asynchronous: 异步的attenuation: 衰减* automation: 自动化backup: 备份* band: 波段；频段barcode: 条形码base: 基础；基极baseband: 基带* battery: 电池baud: 波特beam: 波/光束* binary: 二进制bipolar: 双极性bitmap: 位图Bluetooth: 蓝牙技术Boolean: 布尔型的；逻辑类型的boot: 引导；启动breakdown: 击穿brightness: 亮度buffer: 缓冲器* bus: 总线buzzer: 蜂鸣器bypass: 旁路* cable: 电缆* capacitor: 电容器capacitance: 电容(值)case: 封装；大小写case-sensitive: 区分大小写的casing: 封装* carrier: 载波cell: 电池；单元* cell phone: 手机cellular phone: 蜂窝电话cache: 高速缓存* channel: 信道；频道；通道character: 字符characteristic: 特征的* charge: 电荷；充电 * chip: 芯片* circuit: 电路* code: 码；代码；编码* source codes: 源代码codec: 编码解码器coding: 编码collector: 集电极* clock: 时钟* communication: 通信; 交通compatible: 兼容的compensation: 补偿competition: 竞争* compile: 编译compiler: 编译器complex: 复数* component: 元器件；成分* computer: 计算机concurrency: 并发* conductor: 导体* connector: 连接器；插接件console: 控制台constant: 恒定的* consumable: 耗材* consumer electronics: 消费类电子(产品) converter: 转换器* counter: 计数器couple: 耦合cordless phone: 无绳电话crosstalk: 串音；交叉干扰* crystal: 晶体* current: 电流* cursor: 光标cutoff: 截止cyberspace: 网络空间；虚拟空间cutter: 剪子；(剪线)钳子data: 数据* debug: 调试程序；除错* decimal: 十进制的；小数点的decupling: 去耦default: 缺席；默认值definition: 清晰度；分辨力* demodulation: 解调* design: 设计detection: 检波；解调；探测device: 设备；元件die: 晶片；晶粒；小片dielectric: 电介质的；绝缘的* digital: 数字的；数码的* diode: 二极管direct-coupled: 直接耦合的discrete: 分离的；分立的discrimination: 分辨率；识别力discriminator: 鉴别器；鉴频器* disk: 磁盘distortion: 失真distributed: 分布式的document: 文件domestic appliances: 家用电器drift: 漂移drive: 驱动* driver: 驱动器；驱动程序dual-in-line: 双列直插duplex: 双工edge: 边沿edit: 编辑* electricity: 电；电流；电学electric: 电的；导电的；用电的；电动的 * electrical: 电的；电气科学的electrician: 电工electron: 电子* electronic: 电子的* electronics: 电子学electromagnetic field: 电磁场electromagnetic waves: 电磁波embedded system: 嵌入式系统emitter: 发射极encryption: 编密码；加密entropy: 熵envelop: 包络equalization: 均衡equation: 方程* equipment: 设备Ethernet: 以太网fabrication: 制造；组装fade: 衰落facsimile: 传真feedback: 反馈* filter: 滤波器firewall: 防火墙firmware: 固件（存储在只读存储器中的软件)flash memory: 闪存frame: 帧* frequency 频率* fuse: 保险丝* gain: 增益gateway: 网关generator: 发电机；发生器* glass fiber: 玻璃纤维hacker: 黑客* image: 图像* impedance: 阻抗impulse: 冲激* inductor: 电感器inductance: 电感(量)* information: 信息infrastructure: 基础设施* input: 输入installation: 安装* instruction: 指令* instrument: 仪器 integer: 整型数* integrated circuit: 集成电路(芯片)；IC interactive: 交互式的* interface: 接口* interrupt: 中断inverter: 反向器；非门* information technology: 信息技术; IT jamming: 干扰* laser: 激光layout: 布置；布局lead: 1. 引线；连线；2.铅line: 线路link: 连接；链路；* load: 负载magnitude: （复数的）模；幅度manufacture: 制造matrix: 矩阵measure: 测量；测度；措施* measurement: 测量mechatronics: 机电一体化；机械电子学* message: 消息meter: 仪表microcontroller: 微控制器* microphone: 麦克风* microprocessor: 微处理器* microwave: 微波* mobile phone: 移动电话model: 模型；型号module: 模块；组件modulate: 调制* modulation: 调制* modem: 调制解调器* monitor: 监视器* motor: 电动机；马达；汽车；汽艇* multimedia: 多媒体multiplex: 多路复用mutual conductance: 互导* network: 网络networked computing: 网络计算* noise: 噪音nominal: 标称的；名义上的offset: 补偿；偏离open circuit: 开路* optical fiber: 光学纤维opto-: 光-oscillation: 振荡* oscillator: 振荡器* oscilloscope: 示波器* output: 输出overflow: 溢出overhead: 开销overload: 1. 过载；2.重载package: 包panel: 面板* passive: 无源的peripheral: （计算机）外围设备* phase: 相位pin: 管脚pliers: 钳子；老虎钳；手钳 plotter: 绘图仪* plug: 插头polarization: 极化potentiometer: 电位器* power: 功率；动力* power supply: 电源* printer: 打印机probe: (示波器)探头process: 过程；进程processing: 处理* programme: 程序projector: 投影仪* pulse: 脉冲quartz: 石英radar: 雷达* radio: 1. 无线电传送real time: 实时receive: 接收* receiver: 接收机* record: 记录rectifier: 整流器；检波器* relay: 继电器；中继；转播； refresh: 刷新register: 注册；寄存器* regulator: 稳压器* remote sensing: 遥感resin: 松香resistance: 电阻(量)* resistor: 电阻(器)resolution: 分辨率；解析率 resonate: 谐振response: 响应route: （PCB）布线router: 路由器sample: 样本；样品；采样* satellite: 卫星saturation: 饱和scan: 扫描* scanner: 扫描仪；天线* screen: 1. 屏幕；2. 屏蔽screw: 螺丝钉screwdriver: 螺丝刀* semiconductor: 半导体serial no: 序列号 series: 级数；串联set top box: 机顶盒sharing: 共享shielding: 屏蔽short circuit: 短路* signal: 信号* silicon: 硅simulation: 模拟* software: 软件* socket: 插座solder: 焊锡；焊接source: 源；源极* spare: 备件* spectrum 谱；频谱* specification: 指标storage: 存储* switch: 开关；交换synchronism: 同步* system: 系统* technology: 技术* telecommunication: 电信* telegraph: 电报* telephone: 电话* television: 电视* terminal: 终端；集散地* transformer: 变压器* transistor: 晶体三极管* transmission: 传输* transmitter: 发射机* transportation: 运输trig: 触发tune: 调谐update: 更新upgrade: 升级vacuum tube: 真空管；电子管* video: 视频Volt: 伏特* voltage: 电压wafer: 晶片；硅片；晶圆Watt 瓦特wave: 波waveform generator: 波形发生器 waveguide: 波导wavelength: 波长wire: 线；导线* wireless: 无线的adder 加法器and gate 与门audio amplifier 音频放大器comparator 比较器DC-coupled 直流耦合的discrete 离散的emitter coupled logic 发射极耦合电路fidelity 保真度flip－flop 触发器mixer 混合器，混频器modulator 故障，失灵opertional amplifier 运算放大器radio frequency amplifier 射频放大器superconductiong 超导电的video amplifier 视频放大器zener diode 稳压二极管active element 有源元件anode 阳极attributable 可归属的bais 偏压cathode 阴极current intensity 电流强度dope 掺杂electrode 电极field－effect transistor 场效应管grid 格子，栅极magnetic field 磁场monolithic 独石的，整体的，单片的passive component 无源元件photocell 光电管光电池sensor 传感器triode 三极真空管unipededly 无阻的，不受阻的abstract code 抽象码acronym 缩写字assembler 汇编程序，汇编器assembly language 汇编语言bit （二进制）位，比特bug 故障，错误byte 字节，位元组central processing unit 中央处理器decoder 译码器graghical user interface 图形用户界面icon 图标，像标instruction register 指令寄存器machine code 机器码menory location 存储单元program counter 程序计数器专业英语词汇静态电阻(n.) static resistance 2.动态电阻(n.)dynamic resistance 3.感抗(n.) inductive reactance 4.容抗(n.) capacitive reactance 5. 阻抗(n.) impedance 6. 导纳(n.) admittance 7. 电子电路(n.) electronic circuitry 8. 二端元件(n.) two-terminal element 9. 电压降(n.) voltage drop 10. 毫安(n.) milliampere 11.微伏(n.) microvolt 12.纳米(n.) nanometer 13皮法(n.) picofarad 14千克(n.) kilogram 15兆欧(n.) megohm 16电介质(n.) dielectric 17线圈(n.) coil18磁场(n.) magnet field19电场(n.) electric field20电荷守恒(n.) electric charge conservation / conservation of electric charge21节点(n.) node22回路(n. ) loop23正极(n.) positive polarity / anode 24负极(n.) negative polarity / cathode 25三角函数(n.) trigonometric function 26正弦(n.) sine27余弦(n.) cosine 28阶跃函数(n.) step function29脉冲函数(n.) impulse function30静态响应(n.) static response 31稳态过程(n.) steady process32瞬态分析(n.) transient analysis33时变的(adj.) time-variant34是不变的(adj.) time-invariant35频域(n.) frequency domain36时域(n.) time domain37超前网络(n.) lead network38滞后网络(n.) lag network39频带宽度(n.) bandwidth 40半导体(n.) semiconductor 41微波(n.) microwave42声纳(n.) SONAR(sound navigation and ranging)43雷达(n.) RADAR(radio detecting and ranging)44只读存储器(n.) ROM(read only memory)45随机(存取)存储器(n.) random access memory46交流电(n.) AC(alternating current)47直流电(n.) DC(direct current)48发光二极管(n.) LED(light emitting diode)49正电子(n.) positron50负电子(n.) negatron 51变压器(n.) transforme52接收机(n.) receiver 53发射机(n.) transmitter 54放大器(n.) amplifier 55本振器(n.) local oscillator56滤波器(n.) filter 57混频器(n.) mixer 58解调器(n.) demodulator 59衰减器(n.) attenuator 60锁相环合成器(n.) phase-locked loop synthesizer 61检波器(n.) detector 62反相器(n.) inverter 63窄带的(n.) narrow-band 64旁(频)带(n.) sideband 65差频(n.) difference frequency 66和频(n.) sum frequency 67中频(n.) intermediate frequency 68射频, 无线电频率(n.) Radio Freqency 69次要频率(n.) second frequency 70噪声系数[指数] (n.) noise figure 71调谐电路(n.) tuned circuit 72镜象信号(n.) image signal 73寄生信号(n.) spurious signal 74自动增益控制(n.) AGC=Automatic Gain Control75自动频率控制(n.) AFC=automatic frequency control76转换增益(n.) conversion gain 77噪声级(n.) noise level 78调幅(n.) amplitude modulation 79调频(n.) frequency modulation 80波段转换(n.) band switching 81等幅波(n.) Constant Wave 82民用波段(n.) Citizen Band 83灵敏度(n.) sensitivity 84调频立体声广播(n.) FM stereo broadcasting 85音频(n.) audio frequency 86背景噪声(n.) background noise87频率公差, 容许频偏(n.) frequency tolerance 88交叉调制(n.) crossmodulation 89平方律传递特性(n.) square law transfer characteristic90二次谐波(n.) second harmonic 91变换[变频]增益(n.) conversion gain 92噪声因子(n.) noise factor 93变形,失真，畸变(n.) distortion 94负反馈(n.) negative feedback 95电荷载流子(n.) charge carrier 96捕获比(n.) capture ratio 97变换损耗(n.) conversion loss 98噪声带宽(n.) noise bandwidth 99干扰信号(n.) interfering signal 100积分电路(n.) integrated circuit 101晶体管(n.) transistor 102调试(n.) debugging 103数字电路(n.) digital circuit 104模拟电路(n.) analog circuit 105“与”门(n.) NOT gate 106“非”门(n.) AND gate 107发射极(n.) emitter 108基极(n.) base 109集电极(n.) collector 110饱和(n.) saturation 111传递延迟(n.) propagation delay 112功耗(n.) power consumption。
RAM、SRAM、NVRAM
用于存储BIOS信息的EEPROM（Electrically Erasable Programmable Read Only Memory，电可擦写可编程只读存储器），数据在断电后仍可以保存
通常的，我们将数据断电后仍能保留的半导体存储器称为“非易失性（或非发挥性）随机访问存储器”——Non-Volatile Random Access Memory，即NVRAM，而像DRAM与SRAM这样的存储器则就称为VRAM。其实，严格的说，非易失性存储器应该叫NVM（Non-Volatile Memory）。由以上特性我们可以知道，NVRAM以后肯定是发展的重点和方向。
1：dram
用于存储临时工作数据的DRAM（Dynamic Random Access Memory，动态随机访问存储器），数据要通过不断的CPU中存储常用指令与数据的SRAM（Static Random Access Memory，静态随机访问存储器），数据无需刷新操作，但断电后消失。