50WQ10FN中文资料

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50WQ10-10-0.75

长沙自平衡多级泵厂 50WQ10-10-0.75型排污泵概述：
50WQ10-10-0.75型无堵塞潜水排污泵是我单位在行业中率先引进联邦德国ABS制泵公司先进技术基础上，由我公司科研人员共同努力，同时征求国内水泵专家的意见，并多次改良而研制成功的，经测试各项性能指标的达到国外同类产品先进水平。

本产品具有高效节能、结构独特等功能。

50WQ10-10-0.75型排污泵型号说明：
例：100QW（WQ）100-15-7.5
100—泵排出口径（mm）
QW—潜水式排污泵
100—水泵额定流量（m3/h）
15—水泵额定扬程（m）
7.5—配用电机功率（KW）
50WQ10-10-0.75型排污泵主要用途：
工厂商业严重污染废水的排放、住宅区的污水排污站、城市污水处理厂排水系统、人防系统排水站、自来水厂的给水装置，医院、宾馆的污水排放、市政工程建筑工地、勘探、矿山配套附机、农村沼气池、农田灌溉等行业，输送带颗粒的污水、污物、也可用于清水及带腐蚀性介质。

50WQ10-10-0.75型排污泵使用条件：
1、介质温度不超过60℃，介质重度为1-1.3㎏/dm3。

2、无内自流循环冷却系统的泵，电机部分露出液面不过去1/2。

3、铸铁材质的使用范围为PH5~9。

4、1Cr18Ni9Ti不锈钢材质可使用各种腐蚀性介质。

注：用户如有特殊的温度、介质等要求，请在订货时注明输送介质的详细情况，以便本单位提供更为可靠之产品。

STB50NE10中文资料

STB50NE10N -CHANNEL 100V -0.021Ω-50A -D 2PAKSTripFET ™POWER MOSFETs TYPICAL R DS(on)=0.021Ωs EXCEPTIONAL dv/dt CAPABILITY s 100%AVALANCHE TESTED s LOW GATE CHARGE AT 100o C sAPPLICATION ORIENTED CHARACTERIZATIONsFOR THROUGH-HOLE VERSION CONTACT SALES OFFICEDESCRIPTIONThis Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size ™”strip-based process.The resulting transistor shows extremely high packing density for low on-resistance,rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.APPLICATIONSs HIGH CURRENT,HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERSs MOTOR CONTROL,AUDIO AMPLIFIERS s DC-DC &DC-AC CONVERTERS s AUTOMOTIVE ENVIRONMENT ®INTERNAL SCHEMATIC DIAGRAMDecember 199813D 2PAK TO-263(suffix ”T4”)ABSOLUTE MAXIMUM RATINGSSymbol ParameterValue Unit V DS Drain-source Voltage (V GS =0)100V V DGR Drain-gate Voltage (R GS =20k Ω)100V V GS Gate-source Voltage±20V I D Drain Current (continuous)at T c =25o C 50A I D Drain Current (continuous)at T c =100o C 35A I DM (•)Drain Current (pulsed)200A P totTotal Dissipation at T c =25o C 150W Derating Factor1W/o C dv/dt (1)Peak Diode Recovery voltage slope 6V/nsT s tg Storage Temperature-65to 175o C T jMax.Operating Junction Temperature175oC (•)Pulse width limited by safe operating area(1)I SD ≤50A,di/dt ≤300A/µs,V DD ≤V (BR)DSS ,T j ≤T JMA XTYPE V DSS R DS(on)I D STB50NE10100V<0.027Ω50A1/8THERMAL DATAR thj-case Rthj-amb R thc-sinkT l Thermal Resistance Junction-case MaxThermal Resistance Junction-ambient MaxThermal Resistance Case-sink TypMaximum Lead Temperature For Soldering Purpose162.50.5300o C/WoC/Wo C/Wo CAVALANCHE CHARACTERISTICSSymbol Parameter Max Value UnitI AR Avalanche Current,Repetitive or Not-Repetitive(pulse width limited by T j max)50AE AS Single Pulse Avalanche Energy(starting T j=25o C,I D=I AR,V DD=50V)300mJELECTRICAL CHARACTERISTICS(T case=25o C unless otherwise specified)OFFSymbol Parameter Test Conditions Min.Typ.Max.Unit V(BR)DSS Drain-sourceBreakdown VoltageI D=250µA V GS=0100VI DSS Zero Gate VoltageDrain Current(V GS=0)V DS=Max RatingV DS=Max Rating T c=125o C110µAµAI GSS Gate-body LeakageCurrent(V DS=0)V GS=±20V±100nA ON(∗)Symbol Parameter Test Conditions Min.Typ.Max.Unit V GS(th)Gate Threshold Voltage V DS=V GS I D=250µA234V R DS(on)Static Drain-source OnResistanceV GS=10V I D=25A0.0210.027ΩI D(o n)On State Drain Current V DS>I D(o n)x R DS(on)ma xV GS=10V50A DYNAMICSymbol Parameter Test Conditions Min.Typ.Max.Unitg f s(∗)ForwardTransconductanceV DS>I D(o n)x R DS(on)ma x I D=25A2035SC iss C os s C rss Input CapacitanceOutput CapacitanceReverse TransferCapacitanceV DS=25V f=1MHz V GS=043505001756000675238pFpFpFSTB50NE10 2/8ELECTRICAL CHARACTERISTICS(continued)SWITCHING ONSymbol Parameter Test Conditions Min.Typ.Max.Unitt d(on) t r Turn-on TimeRise TimeV DD=50V I D=25AR G=4.7ΩV GS=10V(see test circuit,figure3)2510034135nsnsQ g Q gs Q gd Total Gate ChargeGate-Source ChargeGate-Drain ChargeV DD=80V I D=50A V GS=10V1232447166nCnCnCSWITCHING OFFSymbol Parameter Test Conditions Min.Typ.Max.Unitt r(Voff) t f t c Off-voltage Rise TimeFall TimeCross-over TimeV DD=80V I D=50AR G=4.7 ΩV GS=10V(see test circuit,figure5)453565614888nsnsnsSOURCE DRAIN DIODESymbol Parameter Test Conditions Min.Typ.Max.UnitI SD I SDM(•)Source-drain CurrentSource-drain Current(pulsed)50200AAV SD(∗)Forward On Voltage I SD=50A V GS=0 1.5Vt rr Q rr I RRM Reverse RecoveryTimeReverse RecoveryChargeReverse RecoveryCurrentI SD=50A di/dt=100A/µsV DD=30V T j=150o C(see test circuit,figure5)15581510.5210110015nsnCA(∗)Pulsed:Pulse duration=300µs,duty cycle1.5%(•)Pulse width limited by safe operating areaSafe Operating Area Thermal ImpedanceSTB50NE103/8Output Characteristics TransconductanceGate Charge vs Gate-source Voltage Transfer CharacteristicsStatic Drain-source On Resistance Capacitance VariationsSTB50NE10 4/8Normalized Gate Threshold Voltage vs TemperatureSource-drain Diode Forward Characteristics Normalized On Resistance vs TemperatureSTB50NE105/8Fig.1:Unclamped Inductive Load Test Circuit Fig.3:Switching Times Test Circuits For Resistive Load Fig.2:Unclamped Inductive Waveform Fig.4:Gate Charge test CircuitFig.5:Test Circuit For Inductive Load Switching And Diode Recovery TimesSTB50NE106/8DIM.mminch MIN.TYP.MAX.MIN.TYP.MAX.A 4.3 4.60.1690.181A1 2.49 2.690.0980.106B 0.70.930.0270.036B2 1.25 1.40.0490.055C 0.450.60.0170.023C2 1.21 1.360.0470.053D 8.959.350.3520.368E 1010.280.3930.404G 4.88 5.280.1920.208L 1515.850.5900.624L2 1.27 1.40.0500.055L31.41.750.0550.068L2L3LB2BGEAC2DCA1P011P6/CTO-263(D 2PAK)MECHANICAL DATASTB50NE107/8STB50NE10Information furnished is believed to be accurate and reliable.However,STMicroelectronics assumes no responsibility for the consequence s of use of such information nor for any infringement of patents or other rights of third parties which may result from its use.No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics.Specification mentioned in this publication are subject to change without notice.This publication supersedes and replaces all information previously supplied.STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.The ST logo is a trademark of STMicroelectronics©1998STMicroelectronics–Printed in Italy–All Rights ReservedSTMicroelectronics GROUP OF COMPANIESAustralia-Brazil-Canada-China-France-Germany-Italy-Japan-Korea-Malaysia-Malta-Mexico-Morocco-The Netherlands-Singapore-Spain-Sweden-Switzerland-Taiwan-Thailand-United Kingdom-U.S.A..8/8。

50WQ10-10-0.75潜污泵

一、50WQ10-10-0.75无堵塞潜水排污泵适用范围:
WQ系列无堵塞潜水排污泵适用用于工厂商业严重污染废水的排放、主宅区的污水排污站、城市污水处理厂派水系统、人防系统排水站、自来水厂的给水设备、医院、宾馆的污水排放、市政工程建筑工地、矿山配套附机、农村沼气池、农田灌溉等行业，输送带颗粒的污水，污物，也可用于清水及带弱腐蚀性介质。

二、50WQ10-10-0.75无堵塞潜水排污泵产品特点:
1、采用双叶片叶轮结构，大大提高了污物的通过能力
2、机械密封采用新型磨檫副，并长期处入油室内运行；
3、整体结构紧凑、体积小、噪声小、节能效果显著，检修方便，方便用户更换；
4、自动控制柜可以根据所需液位变化，自动控制泵的超动与停止，不需专人看管，使用极为方便；
5、可根据用户需要配备安装方式，它给安装、维修到来极大的方便，人可不必此为而进入污水坑；
6、能够在设计范围内使用，而保证电机不会过载；
7、机械密封采用新型硬质耐腐的钛化钨材料，可使泵安全连续运行8000小时以上。

三、50WQ10-10-0.75无堵塞潜水排污泵使用条件:
1、排污泵系列产品在额定电压为380V，电源频率为50Hz时适用
2、介质温度不超过40摄氏度，介质密度≤1150kg/m3,PH值在5-9范围之间;
3、海拔高度不超过1000米；
4、输送介质年粘度不超1000CP；
5、产品工作运行时必须完全潜入水中，但潜水深度不得超过10m;
6、产品材质主要为铸铁，不能用于强腐蚀性或含有强腐蚀性的介质中;。

朗姆斯 50 60 Hz 电磁闸产品说明书

CONTACT LIFE: Electrical at rated load = 100,000 cycles. Mechanical = 10,000,000 cycles.
ELECTRONICS MODULE: Solid state components epoxy encapsulated in nylon shell.
NOTES:
1. Connecteions may be made to nonenergy generating or storing hazardous location devices, such as switch contacts, noninductive resistance thermometer detectors (RTD’s) and thermocouples without necessitating a specific approval except when the device is mounted inside a tank subjected to pressure greater than 15 psi.
SPECIFICATIONS
CONTACT DESIGN: D PST: One normally open (N.O.) and one normally closed (N.C.)
CONTACT RATINGS: 8 Amperes resistive load at 250 Volts A.C. and 5 ampheres at 30 Volts D.C.
Use the following chart to determine the limits of run:
Max. Sensitivity (K OHMS) 3.3 4.7 10

1024F说明书(双面小本)

深圳市威固特洗净设备有限公司SHENZHEN VERYGOOD CLEANING EQUIPMENT CO.,LTD.产品保修证书——威固特系列产品客户名称：地址：电话：产品名称：单槽超声波清洗机VGT-1024F数量：壹台保修说明:1/设备按发票（或送货单）上购买日起，享有一年的保修服务；2/保修期内，因产品质量问题所损坏的一切零部件可免费更换。

（耗材除外如：加热板等）；3/保修卡是您的设备在使用中出现故障，寻求维修时必须具备的。

请妥当保管；4/保修期内，凡属于下述情况，修理后收取维修费：4-1/用户使用不当或自行改装本产品；4-2/安装后，因用户人为面造成的故障或损坏；4-3/因意外灾难事故（水灾、火灾、煤气事故等）；4-4/非我公司设备维修员修理后出现故障；5/您的设备如需上门服务，那么本公司将视路程远近、交通是否方便，考虑是否收取交通费，如果不能接受这个费用，可以与本公司协商确定；6/如果你的设备包装内无购机发票（或送货单），请及时与本公司联系；7/需要维修时，请传真保修卡给我司，修理人员到达你处，请出示保修卡和购机发票（或送货单）；8/凡无发票（或送货单）或超过保修期，则酌情收取维修费和零件费；9/有在保修期内经本公司修理后，三个月内发生同一部件，同一故障现象时（不包括耗材），本公司负责免费维修；10/欢迎对我们的产品质量和售后服务提出宝贵的意见。

供应商：深圳市威固特洗净设备有限公司SHENZHEN VERYGOOD CLEANING EQUPIMENT.,LTD威固特系列超声波（VGT-01系列超声波清洗机）使用说明书深圳市威固特洗净设备有限公司SHENZHEN VERYGOOD CLEANING EQUIPMENT CO.,LTD地址/ADD：深圳市宝安区龙华大浪街道办华昌路鸿源工业区电话/TEL：+86-755-28035588传真/FAX：+86-755-28035088Http: E-mail:sz008@目录1、公司简介 (6)2、重要提示 (7)3、概述 (10)4、超声波清洗的基本原理及特点 (10)5、VGT-01系列清洗机的结构特点 (11)6、VGT-01系列清洗机的主要技术参数 (11)7、操作说明 (12)8、使用注意事项 (12)9、维护与保养 (9)10、异常与故障及对策 (9)11、产品清单 (5)12、产品合格证 (4)13、产品保修证书 (1)产品合格证Quality certificate名称：单槽超声波清洗机Name：SERIES STANDARD ULTRASONIC CLEANER编号：Type：质量检测：NO.078Quality Inspect：NO.078WE,THE MANUFACTURER,HEREBY CERTIFY THAT THIS GOODS HAVE BEEN INSPECTED AND TO BE IN GOOD QUALITY!作为制造商，我们在此声明本产品经检验确认质量合格！产品清单工程名称：单槽超声波清洗机生产编号：公司简介深圳市威固特洗净设备有限公司，是一家秉承固特（香港）实业有限公司成功经营理念，集超声波清洗机、工业纯水机、工业冷水机、超声波塑焊机的研究开发、设计生产、销售服务于一体的高新技术企业。

50WQ06FN中文资料

SCHOTTKY RECTIFIER5.5 Amp50WQ06FNBulletin PD-20525 rev. E 03/03D-Pak (TO-252AA)50WQ06FNBulletin PD-20525 rev. E 03/032Part number50WQ06FNV RMax. DC Reverse Voltage (V)V RWM Max. Working Peak Reverse Voltage (V)Voltage RatingsV FMMax. Forward Voltage Drop 0.57V @ 5A * See Fig. 1(1)0.74V @ 10A 0.54V @ 5A 0.68V @ 10A I RMMax. Reverse Leakage Current 3mA T J = 25 °C * See Fig. 2(1)35mA T J = 125 °CV F(TO)Threshold Voltage 0.35VT J = T J max.r t Forward Slope Resistance 25.5m ΩC T Typical Junction Capacitance 360pF V R = 5V DC , (test signal range 100Khz to 1Mhz) 25 °C L STypical Series Inductance5.0nH Measured lead to lead 5mm from package body dv/dt Max. Voltage Rate of Change10000V/µs(Rated V R )T J = 25 °C T J = 125 °C V R = rated V RElectrical SpecificationsParameters50WQ...UnitsConditions(1) Pulse Width < 300µs, Duty Cycle < 2%T J Max. Junction Temperature Range(*)-40 to 150°C T stgMax. Storage Temperature Range-40 to 150°CR thJC Max. Thermal Resistance Junction3.0°C/W DC operation * See Fig. 4to Case wtApproximate Weight 0.3 (0.01)g (oz.)Case StyleD - PAKSimilar to TO-252AAThermal-Mechanical SpecificationsParameters50WQ...UnitsConditions60I F(AV)Max. Average Forward Current5.5A50% duty cycle @ T C = 132°C, rectangular wave form* See Fig. 5I FSM Max. Peak One Cycle Non-Repetitive 3205µs Sine or 3µs Rect. pulse Surge Current * See Fig. 710510ms Sine or 6ms Rect. pulseE AS Non-Repetitive Avalanche Energy 7mJ T J = 25 °C, I AS = 1.2 Amps, L = 10 mHI ARRepetitive Avalanche Current0.8ACurrent decaying linearly to zero in 1 µsecFrequency limited by T J max. V A = 1.5 x V R typicalAbsolute Maximum RatingsFollowing any rated load condition and with rated V RRM appliedA Parameters50WQ... UnitsConditions< thermal runaway condition for a diode on its own heatsink (*) dPtot1dTjRth( j-a)50WQ06FN3 50WQ06FNBulletin PD-20525 rev. E 03/03 450WQ06FN5 5K3A712A50WQ06FNBulletin PD-20525 rev. E 03/03 6IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105TAC Fax: (310) 252-7309Visit us at for sales contact information. 03/03。

12CWQ04FN中文资料

Case Styles 12CWQ04FN
D-PAK
Base Common Cathode
4
2
1
Common Cathode
Anode
3 Anode
1
元器件交易网
12CWQ04FN
Bulletin PD-20546 rev. G 06/04
Voltage Ratings

3
元器件交易网
Allowab le Case Temperature - (°C) Non-Repetitive Surge Current - I FSM (A)
Average Power Loss- (Watts)
12CWQ04FN
Bulletin PD-20546 rev. G 06/04
IF(AV) Max. Average Forward(Per Leg)
6
Current*SeeFig.5 (Per Device)
12
IFSM Max.PeakOneCycleNon-Repetitive
550
Surge Current * See Fig. 7
90
EAS Non-Repet.Avalan.Energy(PerLeg)
Electrical Specifications
Parameters
12CWQ... Units
Conditions
VFM Max. Forward Voltage Drop
(Per Leg) * See Fig. 1
(1)
IRM Max. Reverse Leakage Current (Per Leg) * See Fig. 2 (1)

DS-D5024FN10 24英寸FHD VA显示器说明书

DS-D5024FN1024 inch FHD VA Monitor⏹Ultra-thin device body with ultra-thin border for 3 sides.⏹8 bit LVDS HD (1920 × 1080) display.⏹178° ultra-wide view screen.⏹3D noise reduction.⏹Low blue light design for eye care.⏹Dual interface of HDMI and VGA.⏹Support VESA wall mount.SpecificationModel DS-D5024FN10Display Screen Size 23.8 inchActive Display Area 527.04 mm (H) × 296.46 mm (V) Resolution 1920 × 1080Backlight E-LEDPixel Pitch 0.2745 (H) mm × 0.2745 (V) mm Brightness 250 cd/m²Viewing Angle 178° (H)/178° (V)Color Depth 8 bitContrast Ratio 4000 : 1Response Time 6.5 ms (typ) (G to G) OD 5 ms Refresh Rate 60 HzHaze Anti-Glare, 3H (Without Haze) Reliability 7 × 24 HColor Gamut 72% NTSCInterface Video & Audio Input HDMI 1.4 × 1, VGA × 1 Video & Audio Output NoneData Transmission Interface NoneControl Interface NonePower Power Supply DC 12 V, 2.5 A Power Consumption ≤ 30 W Standby Consumption ≤ 0.5 WWorking Environment Working Temperature 0°C to 40 °C (32 °F to 104 °F) Working Humidity 20% to 80% RH (Non-Condensing) Storage Temperature -20 °C to 60 °C (-4 °F to 140 °F) Storage Humidity 20% to 80% RH (Non-Condensing)General Casing Material PlasticVESA 100 mm × 100 mm (4-M4 × 10 mm)Bezel Width 1.8 mm (top/left/right), 21.4 mm (bottom)Product Dimensions (W × H × D)538.40 (W) mm × 326.35 (H) mm × 37.50 (D) mm (without stand)538.40 (W) mm × 407.10 (H) mm × 186.37 (D) mm (with stand) Package Dimensions (W × H × D) 600 (W) mm × 408 (H) mm × 94 (D) mmNet Weight 2.634 ± 0.5 kgGross Weight 3.340 ± 0.5 kgPacking ListMonitor × 1, Base component × 1, Power adapter (12 V, 2.5 A) × 1, HDMIcable (1.5 m) × 1, User manual × 1, Multilingual manual × 1RemarksIf the appearance and parameters in this specification vary from the actualproduct, the later prevails. You can also consult local sale staff.⏹ Physical InterfaceInterfaceDescription InterfaceDescriptionHDMIHDMI 1.4 digital signal input interfaceVGA VGA analog signal input interface DC DC 12 V, 2.5 A⏹ DimensionUnit: mm⏹ Available ModelDS-D5024FN10。

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SCHOTTKY RECTIFIER
5.5 Amp
50WQ10FN
Bulletin PD-20526 rev.E 03/03
D-Pak (TO-252AA)
50WQ10FN
Bulletin PD-20526 rev. E 03/03
Part number
50WQ10FN
V R
Max. DC Reverse Voltage (V)
V RWM Max. Working Peak Reverse Voltage (V)
Voltage Ratings
V FM
Max. Forward Voltage Drop 0.77V @ 5A * See Fig. 1
(1)
0.91V @ 10A 0.63V @ 5A 0.74
V @ 10A I RM
Max. Reverse Leakage Current 1mA T J = 25 °C * See Fig. 2
(1)
4mA T J = 125 °C
V F(TO)Threshold Voltage 0.47V
T J = T J max.
r t Forward Slope Resistance 21.46m Ω
C T Typical Junction Capacitance 183pF V R = 5V DC , (test signal range 100Khz to 1Mhz) 25 °C L S
Typical Series Inductance
5.0
nH
Measured lead to lead 5mm from package body
T J = 25 °C T J = 125 °C V R = rated V R
Electrical Specifications
Parameters
50WQ...
Units
Conditions
(1) Pulse Width < 300µs, Duty Cycle < 2%
T J Max. Junction Temperature Range (*)-40 to 150°C T stg
Max. Storage Temperature Range
-40 to 150°C R thJC Max. Thermal Resistance Junction
3.0°C/W DC operation * See Fig. 4
to Case wt
Approximate Weight 0.3 (0.01)
g (oz.)
Case Style
D - PAK Similar to TO-252AA
Thermal-Mechanical Specifications
Parameters
50WQ...
Units
Conditions
100
I F(AV)Max. Average Forward Current
5.5
A
50% duty cycle @ T C = 135°C, rectangular wave form
* See Fig. 5I FSM Max. Peak One Cycle Non-Repetitive 3305µs Sine or 3µs Rect. pulse
Surge Current * See Fig. 711010ms Sine or 6ms Rect. pulse E AS Non-Repetitive Avalanche Energy 6.0mJ T J = 25 °C, I AS = 0.5 Amps, L = 40 mH
I AR
Repetitive Avalanche Current
0.5
A
Current decaying linearly to zero in 1 µsec
Frequency limited by T J max. V A = 1.5 x V R typical
Absolute Maximum Ratings
Following any rated load condition and with
rated V RRM applied
A Parameters
50WQ... Units Conditions
< thermal runaway condition for a diode on its own heatsink (*) dPtot
1
dTj
Rth( j-a)
50WQ10FN
3
50WQ10FN
50WQ10FN
5
5K3A
50WQ10FN
Bulletin PD-20526 rev. E 03/03
6
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at for sales contact information. 03/03
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.。