HAT1036R中文资料

5
HAT1036R
Reverse Drain Current I DR (A)
Reverse Drain Current vs.
Souece to Drain Voltage 50
40 -10 V
30
-5 V
VGS = 0
20
10
Pulse Test
0
-0.4 -0.8 -1.2 -1.6 -2.0
100 1000 1000
Normalized Transient Thermal Impedance γ s (t)
6
Switching Time Test Circuit
Vin Monitor
D.U.T.
Vout Monitor
RL
Vin –4 V
50Ω
VDD = –10 V
HAT1036R
Switching Time Waveforms
300 Crss
100
30
VGS = 0
f = 1 MHz 10
0 -10 -20 -30 -40 -50
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
0
0
VDD = –5 V –10 V
–10
–25 V
–4
–20
–8
VDS –30
Unit V V A A A W °C °C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage V(BR)DSS -30
Gate to source leak current
I GSS
55
—
ns
Test Conditions ID = -10 mA, VGS = 0 VGS = ±20 V, VDS = 0 VDS = -30 V, VGS = 0 VDS = -10 V, I D = -1 mA ID = -6 A, VGS = -10 V Note1 ID = -6 A, VGS = -4 V Note1 ID = -6 A, VDS = -10 V Note1 VDS = -10 V VGS = 0 f = 1 MHz VDD = -10 V VGS = -10 V ID = -12 A VGS = -4 V, ID = -6 A VDD ≅ -10 V
V DS = -10 V
Pulse Test -40
-30
-20
-10
Tc = 75°C
25°C
–25°C
0
-1
-2
-3
-4
-5
Gate to Source Voltage V GS (V)
3
HAT1036R
Drain to Source Voltage V DS(on) (V)
Drain to Source Saturation Voltage vs. Gate to Source Voltage
Static Drain to Source on State Resistance vs. Temperature
50 Pulse Test
40
I D = -2 A, -5 A, -10 A 30
V GS = -4 V 20
10 -10 V
-2 A, -5 A, -10 A
0
–40
0
40 80 120 160
-0.3 -1 -3 -10 -30 -100 Drain Current I D (A)
4
Reverse Recovery Time trr (ns)
HAT1036R
Body–Drain Diode Reverse Recovery Time
100
50
20 di/dt = 20 A/µs VGS = 0, Ta = 25°C
θ ch – f(t) = γ s (t) • θ ch – f
θ ch – f = 83.3 °C/W, Ta = 25 °C When using the glass epoxy board
(FR4 40x40x1.6 mm)
PDM
PW T
D=
PW T
10 m 100 m 1
10
Pulse Width PW (S)
Outline
ADE-208-662D (Z) 5th. Edition
February 1999
SOP–8
8 7 65
56 7 8 DD D D
1 234
4 G
SSS 12 3
1, 2, 3 Source
4
Gate
5, 6, 7, 8 Drain
HAT1036R
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Drain to source voltage
VDSS
-30
Gate to source voltage
VGSS
±20
Drain current
ID
-12
Drain peak current
I Note1 D(pulse)
-96
Body-drain diode reverse drain current IDR
—
Zero gate voltege drain current
I DSS
—
Gate to source cutoff voltage
VGS(off)
-1.0
Static drain to source on state
RDS(on)
—
resistance
RDS(on)
—
Forward transfer admittance
-12
Channel del temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s
Drain to Source Voltage V DS (V)
Note 4 : When using the glass epoxy board (FR4 40x40x1.6 mm)
Drain Current I D (A)
Typical Output Characteristics
-50
-10V
t rr
—
Note: 1. Pulse test
Typ Max Unit
—
—
V
—
±0.1 µA
—
-1
µA
—
-2.5 V
11
14
mΩ
21
34
mΩ
20
—
S
4200 —
pF
870 —
pF
360 —
pF
70
—
nc
12
—
nc
14
—
nc
120 —
ns
350 —
ns
100 —
ns
120 —
ns
-0.85 -1.11 V
IF = -12 A, VGS = 0 Note1 IF = -12 A, VGS = 0 diF/ dt = 20 A/ µs
2
Main Characteristics
HAT1036R
Channel Dissipation Pch (W)
Power vs. Temperature Derating 4.0
Source to Drain Voltage V SD (V)
Normalized Transient Thermal Impedance vs. Pulse Width 10
D=1 1
0.5 0.1 0.2
0.1 0.05 0.01 0.02 0.01
0.001
1shot pulse
0.0001 10 µ 100 µ 1 m
200 100 t d(on)
50
tf t d(off)
20 VGS = -4 V, VDS = -10 V 10 RG = 50 Ω , duty < 1 %
-0.1 -0.2 -0.5 -1 -2 -5 -10 -20
Drain Current I D (A)
Drain to Source Voltage V DS (V)
10 -0.1 -0.2 -0.5 -1 -2 -5 -10 -20 Reverse Drain Current I DR (A)
Capacitance C (pF)
10000 3000 1000
Typical Capacitance vs. Drain to Source Voltage
Ciss
Coss
HAT1036R
Silicon P Channel Power MOS FET Power Switching
Features
• Low on-resistance RDS(on) = 11 mΩ typ
• Capable of -4 V gate drive • Low drive current • High density mounting
Vin 10%