BDV65BG;BDV64BG;BDV64B;BDV65B;中文规格书,Datasheet资料
配管基础知识(1)
配管基础知识（1）张红志1、概要本篇将通过文字、图形详细介绍配管专业设计中经常遇到的材料。
2、配管专业各类常见材料：通常把除钢管（或FRP管、CU/NI管、PVC管等）、阀门和其它特殊件（过滤器、软管、阻火器等）除外，管道上安装的其它材料统称为管件（PIPE FITTING）。
1）钢管（PIPE）：配管专业材料中除穿墙件、管支架外，一般均采用无缝钢管。
2）弯头：ELLBOW，缩写ELB，弯头有长短半径、角度之分，通常料表中所列的90ELB 是指1.5倍公称直径的90°弯头；45ELB指1.5倍公称直径的45°弯头；另外有1.0倍公称直径的短半径弯头偶尔也在配管工程中出现，但很少使用，多用在一些空间局限、90°弯头放不下的场所，采办料单描述：S90ELB。
另外还有一些60°、30°的弯头，但很少采用，如果现场确实需要该类弯头，工人通常用90°、45°的弯头切割。
海上平台配管有时会采用5DN的弯管，例如海管上平台段管线一般中间设计弯管，另外对于输送固体颗粒介质、或液体中还有固体颗粒较多的管线，为减少摩擦、堵塞，通常也在转弯处采取大半径弯管。
该类弯管需要由详细设计提交弯管加工图，外委加工。
BW对焊SW承插焊NPT螺纹连接3）法兰（FLANGE）就法兰与管子端连接形式而言有如下几种连接方式：SW（承插焊SOCKET WELD）、WN（带颈对焊WELD NECK）、NPT（螺纹连接）、LAPPED（活套法兰）、SO（SLIDE ON平焊）。
海上常采用前三项，后三项在陆地化工厂中有应用。
法兰的密封面有以下几种：RF（凸面RAISED FACE）；FF（俗称全光面FULL FACE）、RTJ（环连接榫槽面）、RFM（F）（榫槽面）。
注意事项：对于SW及NPT连接的法兰，在提料时常常有人描述为：FLANGE 3000LB 16MN JB4726-2000，SW-RF ，这是不对的。
MEMORY存储芯片MT29F64G08CBABAWPB中文规格书
PRECHARGE OperationInput A10 determines whether one bank or all banks are to be precharged and, in thecase where only one bank is to be precharged, inputs BA[2:0] select the bank.When all banks are to be precharged, inputs BA[2:0] are treated as “Don’t Care.” After abank is precharged, it is in the idle state and must be activated prior to any READ orWRITE commands being issued.SELF REFRESH OperationThe SELF REFRESH operation is initiated like a REFRESH command except CKE is LOW.The DLL is automatically disabled upon entering SELF REFRESH and is automaticallyenabled and reset upon exiting SELF REFRESH.All power supply inputs (including V REFCA and V REFDQ) must be maintained at valid lev-els upon entry/exit and during self refresh mode operation. V REFDQ may float or notdrive V DDQ/2 while in self refresh mode under certain conditions:•V SS < V REFDQ < V DD is maintained.•V REFDQ is valid and stable prior to CKE going back HIGH.•The first WRITE operation may not occur earlier than 512 clocks after V REFDQ is valid.•All other self refresh mode exit timing requirements are met.The DRAM must be idle with all banks in the precharge state (t RP is satisfied and nobursts are in progress) before a self refresh entry command can be issued. ODT mustalso be turned off before self refresh entry by registering the ODT ball LOW prior to theself refresh entry command (see On-Die Termination (ODT) ( for timing requirements).If R TT,nom and R TT(WR) are disabled in the mode registers, ODT can be a “Don’t Care.”After the self refresh entry command is registered, CKE must be held LOW to keep theDRAM in self refresh mode.After the DRAM has entered self refresh mode, all external control signals, except CKEand RESET#, are “Don’t Care.” The DRAM initiates a minimum of one REFRESH com-mand internally within the t CKE period when it enters self refresh mode.The requirements for entering and exiting self refresh mode depend on the state of theclock during self refresh mode. First and foremost, the clock must be stable (meetingt CK specifications) when self refresh mode is entered. If the clock remains stable andthe frequency is not altered while in self refresh mode, then the DRAM is allowed to exitself refresh mode after t CKESR is satisfied (CKE is allowed to transition HIGH t CKESRlater than when CKE was registered LOW). Since the clock remains stable in self refreshmode (no frequency change), t CKSRE and t CKSRX are not required. However, if theclock is altered during self refresh mode (if it is turned-off or its frequency changes),then t CKSRE and t CKSRX must be satisfied. When entering self refresh mode, t CKSREmust be satisfied prior to altering the clock's frequency. Prior to exiting self refreshmode, t CKSRX must be satisfied prior to registering CKE HIGH.When CKE is HIGH during self refresh exit, NOP or DES must be issued for t XS time. t XSis required for the completion of any internal refresh already in progress and must besatisfied before a valid command not requiring a locked DLL can be issued to the de-vice. t XS is also the earliest time self refresh re-entry may occur. Before a command re-quiring a locked DLL can be applied, a ZQCL command must be issued, t ZQOPER tim-ing must be met, and t XSDLL must be satisfied. ODT must be off during t XSDLL.Figure 93: Self Refresh Entry/Exit TimingCKCK#CommandAddressCKEODT 2RESET#2Exit self refresh mode (asynchronous)Don’t CareIndicates breakin time scale Notes: 1.The clock must be valid and stable, meeting t CK specifications at least t CKSRE after en-tering self refresh mode, and at least t CKSRX prior to exiting self refresh mode, if the clock is stopped or altered between states Ta0 and Tb0. If the clock remains valid and unchanged from entry and during self refresh mode, then t CKSRE and t CKSRX do not apply; however, t CKESR must be satisfied prior to exiting at SRX.2.ODT must be disabled and R TT off prior to entering self refresh at state T1. If both R TT,nom and R TT(WR) are disabled in the mode registers, ODT can be a “Don’t Care.”3.Self refresh entry (SRE) is synchronous via a REFRESH command with CKE LOW.4. A NOP or DES command is required at T2 after the SRE command is issued prior to the inputs becoming “Don’t Care.”5.NOP or DES commands are required prior to exiting self refresh mode until state Te0.6.t XS is required before any commands not requiring a locked DLL.7.t XSDLL is required before any commands requiring a locked DLL.8.The device must be in the all banks idle state prior to entering self refresh mode. For example, all banks must be precharged, t RP must be met, and no data bursts can be in progress.9.Self refresh exit is asynchronous; however, t XS and t XSDLL timings start at the first rising clock edge where CKE HIGH satisfies t ISXR at Tc1. t CKSRX timing is also measured so that t ISXR is satisfied at Tc1.Extended Temperature UsageMicron’s DDR3 SDRAM support the optional extended case temperature (T C) range of0°C to 95°C. Thus, the SRT and ASR options must be used at a minimum.The extended temperature range DRAM must be refreshed externally at 2x (double re-fresh) anytime the case temperature is above 85°C (and does not exceed 95°C). The ex-ternal refresh requirement is accomplished by reducing the refresh period from 64ms to32ms. However, self refresh mode requires either ASR or SRT to support the extendedtemperature. Thus, either ASR or SRT must be enabled when T C is above 85°C or selfrefresh cannot be used until T C is at or below 85°C. Table 75 summarizes the two exten-ded temperature options and Table 76 summarizes how the two extended temperatureoptions relate to one another.Table 75: Self Refresh Temperature and Auto Self Refresh DescriptionTable 76: Self Refresh Mode SummaryPower-Down ModePower-down is synchronously entered when CKE is registered LOW coincident with aNOP or DES command. CKE is not allowed to go LOW while an MRS, MPR, ZQCAL,READ, or WRITE operation is in progress. CKE is allowed to go LOW while any of theother legal operations (such as ROW ACTIVATION, PRECHARGE, auto precharge, or RE-FRESH) are in progress. However, the power-down I DD specifications are not applicableuntil such operations have completed. Depending on the previous DRAM state and thecommand issued prior to CKE going LOW, certain timing constraints must be satisfied(as noted in Table 77). Timing diagrams detailing the different power-down mode entryand exits are shown in Figure 94 (page 176) through Figure 103 (page 180).Table 77: Command to Power-Down Entry ParametersNote: 1.If slow-exit mode precharge power-down is enabled and entered, ODT becomes asyn-chronous t ANPD prior to CKE going LOW and remains asynchronous until t ANPD +t XPDLL after CKE goes HIGH.Entering power-down disables the input and output buffers, excluding CK, CK#, ODT,CKE, and RESET#. NOP or DES commands are required until t CPDED has been satis-fied, at which time all specified input/output buffers are disabled. The DLL should be ina locked state when power-down is entered for the fastest power-down exit timing. Ifthe DLL is not locked during power-down entry, the DLL must be reset after exitingpower-down mode for proper READ operation as well as synchronous ODT operation.During power-down entry, if any bank remains open after all in-progress commands arecomplete, the DRAM will be in active power-down mode. If all banks are closed after allin-progress commands are complete, the DRAM will be in precharge power-downmode. Precharge power-down mode must be programmed to exit with either a slow exitmode or a fast exit mode. When entering precharge power-down mode, the DLL isturned off in slow exit mode or kept on in fast exit mode.The DLL also remains on when entering active power-down. ODT has special timingconstraints when slow exit mode precharge power-down is enabled and entered. Referto Asynchronous ODT Mode (page 197) for detailed ODT usage requirements in slowexit mode precharge power-down. A summary of the two power-down modes is listed inTable 78 (page 175).While in either power-down state, CKE is held LOW, RESET# is held HIGH, and a stableclock signal must be maintained. ODT must be in a valid state but all other input signalsare “Don’t Care.” If RESET# goes LOW during power-down, the DRAM will switch out ofpower-down mode and go into the reset state. After CKE is registered LOW, CKE mustremain LOW until t PD (MIN) has been satisfied. The maximum time allowed for power-down duration is t PD (MAX) (9 × t REFI).The power-down states are synchronously exited when CKE is registered HIGH (with arequired NOP or DES command). CKE must be maintained HIGH until t CKE has beensatisfied. A valid, executable command may be applied after power-down exit latency,t XP, and t XPDLL have been satisfied. A summary of the power-down modes is listed be-low.For specific CKE-intensive operations, such as repeating a power-down-exit-to-refresh-to-power-down-entry sequence, the number of clock cycles between power-down exitand power-down entry may not be sufficient to keep the DLL properly updated. In addi-tion to meeting t PD when the REFRESH command is used between power-down exitand power-down entry, two other conditions must be met. First, t XP must be satisfiedbefore issuing the REFRESH command. Second, t XPDLL must be satisfied before thenext power-down may be entered. An example is shown in Figure 104 (page 181).Table 78: Power-Down Modes。
W25Q128BVEIG;中文规格书,Datasheet资料
Publication Release Date: April 18, 20123V 128M-BITSERIAL FLASH MEMORY WITH DUAL AND QUAD SPITable of Contents1.GENERAL DESCRIPTION (5)2.FEATURES (5)3.PACKAGE TYPES AND PIN CONFIGURATIONS (6)3.1Pad Configuration WSON 8x6-mm (6)3.2Pad Description WSON 8x6-mm (6)3.3Pin Configuration SOIC 300-mil (7)3.4Pin Description SOIC 300-mil (7)3.5Ball Configuration TFBGA 8x6-mm (5x5 or 6x4 Ball Array) (8)3.6Ball Description TFBGA 8x6-mm (8)4.PIN DESCRIPTIONS (9)4.1Chip Select (/CS) (9)4.2Serial Data Input, Output and IOs (DI, DO and IO0, IO1, IO2, IO3) (9)4.3Write Protect (/WP) (9)4.4HOLD (/HOLD) (9)4.5Serial Clock (CLK) (9)5.BLOCK DIAGRAM (10)6.FUNCTIONAL DESCRIPTIONS (11)6.1SPI OPERATIONS (11)6.1.1Standard SPI Instructions (11)6.1.2Dual SPI Instructions (11)6.1.3Quad SPI Instructions (11)6.1.4Hold Function (11)6.2WRITE PROTECTION (12)6.2.1Write Protect Features (12)7.STATUS REGISTERS AND INSTRUCTIONS (13)7.1STATUS REGISTERS (13)7.1.1BUSY Status (BUSY) (13)7.1.2Write Enable Latch Status (WEL) (13)7.1.3Block Protect Bits (BP2, BP1, BP0) (13)7.1.4Top/Bottom Block Protect Bit (TB) (13)7.1.5Sector/Block Protect Bit (SEC) (13)7.1.6Complement Protect Bit (CMP) (14)7.1.7Status Register Protect Bits (SRP1, SRP0) (14)7.1.8Erase/Program Suspend Status (SUS) (14)7.1.9Security Register Lock Bits (LB3, LB2, LB1) (14)7.1.10Quad Enable Bit (QE) (15)7.1.11Status Register Memory Protection (CMP = 0) (16)7.1.12 Status Register Memory Protection (CMP = 1) (17)Publication Release Date: April 18, 20127.2 INSTRUCTIONS (18)7.2.1 Manufacturer and Device Identification ................................................................................ 18 7.2.2 Instruction Set Table 1 (Erase, Program Instructions) .......................................................... 19 7.2.3 Instruction Set Table 2 (Read Instructions) .......................................................................... 20 7.2.4 Instruction Set Table 3 (ID, Security Instructions) ................................................................ 21 7.2.5 Write Enable (06h) ............................................................................................................... 22 7.2.6 Write Enable for Volatile Status Register (50h) .................................................................... 22 7.2.7 Write Disable (04h) ............................................................................................................... 23 7.2.8 Read Status Register-1 (05h) and Read Status Register-2 (35h) ........................................ 24 7.2.9 Write Status Register (01h) .................................................................................................. 24 7.2.10 Read Data (03h) ................................................................................................................. 26 7.2.11 Fast Read (0Bh) ................................................................................................................. 27 7.2.12 Fast Read Dual Output (3Bh) ............................................................................................. 28 7.2.13 Fast Read Quad Output (6Bh) ............................................................................................ 29 7.2.14 Fast Read Dual I/O (BBh) ................................................................................................... 30 7.2.15 Fast Read Quad I/O (EBh) ................................................................................................. 32 7.2.16 Word Read Quad I/O (E7h) ................................................................................................ 34 7.2.17 Octal Word Read Quad I/O (E3h) ....................................................................................... 36 7.2.18 Set Burst with Wrap (77h) .................................................................................................. 38 7.2.19 Continuous Read Mode Bits (M7-0) ................................................................................... 39 7.2.20 Continuous Read Mode Reset (FFh or FFFFh) .................................................................. 39 7.2.21 Page Program (02h) ........................................................................................................... 40 7.2.22 Quad Input Page Program (32h) ........................................................................................ 41 7.2.23 Sector Erase (20h) ............................................................................................................. 42 7.2.24 32KB Block Erase (52h) ..................................................................................................... 43 7.2.25 64KB Block Erase (D8h) ..................................................................................................... 44 7.2.26 Chip Erase (C7h / 60h) ....................................................................................................... 45 7.2.27 Erase / Program Suspend (75h) ......................................................................................... 46 7.2.28 Erase / Program Resume (7Ah) ......................................................................................... 47 7.2.29 Power-down (B9h) .............................................................................................................. 48 7.2.30 Release Power-down / Device ID (ABh) ............................................................................. 49 7.2.31 Read Manufacturer / Device ID (90h) ................................................................................. 51 7.2.32 Read Manufacturer / Device ID Dual I/O (92h) ................................................................... 52 7.2.33 Read Manufacturer / Device ID Quad I/O (94h) ................................................................. 53 7.2.34 Read Unique ID Number (4Bh)........................................................................................... 54 7.2.35 Read JEDEC ID (9Fh) ........................................................................................................ 55 7.2.36 Read SFDP Register (5Ah) ................................................................................................ 56 7.2.37 Erase Security Registers (44h) ........................................................................................... 57 7.2.38 Program Security Registers (42h) ...................................................................................... 58 7.2.39 Read Security Registers (48h) . (59)8.ELECTRICAL CHARACTERISTICS (60)8.1Absolute Maximum Ratings (60)8.2Operating Ranges (60)8.3Power-up Timing and Write Inhibit Threshold (61)8.4DC Electrical Characteristics (62)8.5AC Measurement Conditions (63)8.6AC Electrical Characteristics (64)8.7AC Electrical Characteristics (cont’d) (65)8.8Serial Output Timing (66)8.9Serial Input Timing (66)8.10HOLD Timing (66)8.11WP Timing (66)9.PACKAGE SPECIFICATION (67)9.18-Pad WSON 8x6-mm (Package Code E) (67)9.216-Pin SOIC 300-mil (Package Code F) (68)9.324-Ball TFBGA 8x6-mm (Package Code B, 5x5-1 Ball Array) (69)9.424-Ball TFBGA 8x6-mm (Package Code C, 6x4 Ball Array) (70)10.ORDERING INFORMATION (71)10.1Valid Part Numbers and Top Side Marking (72)11.REVISION HISTORY (73)Publication Release Date: April 18, 20121. GENERAL DESCRIPTIONThe W25Q128BV (128M-bit) Serial Flash memory provides a storage solution for systems with limited space, pins and power. The 25Q series offers flexibility and performance well beyond ordinary Serial Flash devices. They are ideal for code shadowing to RAM, executing code directly from Dual/Quad SPI (XIP) and storing voice, text and data. The device operates on a single 2.7V to 3.6V power supply with current consumption as low as 4mA active and 1µA for power-down.The W25Q128BV array is organized into 65,536 programmable pages of 256-bytes each. Up to 256 bytes can be programmed at a time. Pages can be erased in groups of 16 (4KB sector erase), groups of 128 (32KB block erase), groups of 256 (64KB block erase) or the entire chip (chip erase). The W25Q128BV has 4,096 erasable sectors and 256 erasable blocks respectively. The small 4KB sectors allow for greater flexibility in applications that require data and parameter storage. (See Figure 2.)The W25Q128BV supports the standard Serial Peripheral Interface (SPI), and a high performance Dual/Quad output as well as Dual/Quad I/O SPI: Serial Clock, Chip Select, Serial Data I/O0 (DI), I/O1 (DO), I/O2 (/WP), and I/O3 (/HOLD). SPI clock frequencies of up to 104MHz are supported allowing equivalent clock rates of 208MHz (104MHz x 2) for Dual Output and 280MHz (70MHz x 4) for Quad SPI when using the Fast Read Quad SPI instructions. These transfer rates can outperform standard Asynchronous 8 and 16-bit Parallel Flash memories. The Continuous Read Mode allows for efficient memory access with as few as 8-clocks of instruction-overhead to read a 24-bit address, allowing true XIP (execute in place) operation.A Hold pin, Write Protect pin and programmable write protection, with top, bottom or complement array control, provide further control flexibility. Additionally, the device supports JEDEC standard manufacturer and device identification with a 64-bit Unique Serial Number.2. FEATURES• Family of SpiFlash Memories – W25Q128BV: 128M-bit/16M-byte – 256-byte per programmable page– Standard SPI: CLK, /CS, DI, DO, /WP, /Hold– Dual SPI: CLK, /CS, IO 0, IO 1, /WP, /Hold– Quad SPI: CLK, /CS, IO 0, IO 1, IO 2, IO 3• Highest Performance Serial Flash– 104/70MHz Dual Output/Quad SPI clocks– 208/280MHz equivalent Dual /Quad SPI– 35MB/S continuous data transfer rate– Up to 5X that of ordinary Serial Flash– More than 100,000 erase/program cycles (1)– More than 20-year data retention• Efficient “Continuous Read Mode” – Low Instruction overhead– Continuous Read with 8/16/32/64-Byte Wrap – As few as 8 clocks to address memory – Allows true XIP (execute in place) operation – Outperforms X16 Parallel Flash • Low Power, Wide Temperature Range– Single 2.7 to 3.6V supply– 4mA active current, <1µA Power-down current – -40°C to +85/105°C operating range • Flexible Architecture with 4KB sectors– Uniform Sector/Block Erase (4K/32K/64K-Byte)– Program one to 256 bytes– Erase/Program Suspend & Resume• Advanced Security Features – Software and Hardware Write-Protect – Top/Bottom, 4KB complement array protection – Lock-Down and OTP array protection – 64-Bit Unique Serial Number for each device – Discoverable Parameters (SFDP) Register – 3X256-Byte Security Registers with OTP locks– Volatile & Non-volatile Status Register Bits• Space Efficient Packaging – 8-pad WSON 8x6-mm – 16-pin SOIC 300-mil – 24-ball TFBGA 8x6-mm– Contact Winbond for KGD and other options Note 1. More than 100k Block Erase/Program cycles for Industrial and Automotive temperature; more than 10k fullchip Erase/Program cycles tested in compliance with AEC-Q100.3.PACKAGE TYPES AND PIN CONFIGURATIONSW25Q128BV is offered in an 8-pad WSON 8x6-mm (package code E), a 16-pin SOIC 300-mil (package code F) and two 24-ball 8x6-mm TFBGAs (package code B, C) as shown in Figure 1a-c respectively. Package diagrams and dimensions are illustrated at the end of this datasheet.3.1Pad Configuration WSON 8x6-mmFigure 1a. W25Q128BV Pad Assignments, 8-pad WSON 8x6-mm (Package Code E)3.2Pad Description WSON 8x6-mmPAD NO. PAD NAME I/O FUNCTION1 /CS I Chip Select Input2 DO (IO1) I/O Data Output (Data Input Output 1)*1(IO2)I/O Write Protect Input ( Data Input Output 2)*23 /WP4 GND Ground5 DI (IO0) I/O Data Input (Data Input Output 0)*16 CLK I Serial Clock Input(IO3)I/O Hold Input (Data Input Output 3)*27 /HOLD8 VCC PowerSupply*1: IO0 and IO1 are used for Standard and Dual SPI instructions*2: IO0 – IO3 are used for Quad SPI instructionsPublication Release Date: April 18, 20123.3 Pin Configuration SOIC 300-milFigure 1b. W25Q128BV Pin Assignments, 16-pin SOIC 300-mil (Package Code F)3.4 Pin Description SOIC 300-milPIN NO.PIN NAMEI/OFUNCTION1 /HOLD (IO3)I/OHold Input (Data Input Output 3)*22 VCC Power Supply3 N/C No Connect4 N/C No Connect5 N/C No Connect6 N/C No Connect7 /CS I Chip Select Input8DO (IO1)I/O Data Output (Data Input Output 1)*19 /WP (IO2)I/OWrite Protect Input (Data Input Output 2)*210 GND Ground 11 N/C No Connect 12 N/C No Connect 13 N/C No Connect 14 N/C No Connect 15 DI (IO0) I/O Data Input (Data Input Output 0)*116CLKISerial Clock Input*1: IO0 and IO1 are used for Standard and Dual SPI instructions.*2: IO0 – IO3 are used for Quad SPI instructions, /WP or /HOLD functions are only available for Standard/Dual SPI.3.5Ball Configuration TFBGA 8x6-mm (5x5 or 6x4 Ball Array)Figure 1c. W25Q128BV Ball Assignments, 24-ball TFBGA 8x6-mm (Package Code B, C)3.6Ball Description TFBGA 8x6-mmBALL NO. PIN NAME I/O FUNCTIONB2 CLK I Serial Clock InputB3 GND GroundSupplyB4 VCC PowerC2 /CS I Chip Select Input(IO2)I/O Write Protect Input (Data Input Output 2)*2C4 /WPD2 DO (IO1) I/O Data Output (Data Input Output 1)*1D3 DI (IO0) I/O Data Input (Data Input Output 0)*1(IO3)I/O Hold Input (Data Input Output 3)*2D4 /HOLDMultiple NC NoConnect*1: IO0 and IO1 are used for Standard and Dual SPI instructions.*2: IO0 – IO3 are used for Quad SPI instructions, /WP or /HOLD functions are only available for Standard/Dual SPI.Publication Release Date: April 18, 20124. PIN DESCRIPTIONS4.1 Chip Select (/CS)The SPI Chip Select (/CS) pin enables and disables device operation. When /CS is high the device is deselected and the Serial Data Output (DO, or IO0, IO1, IO2, IO3) pins are at high impedance. When deselected, the devices power consumption will be at standby levels unless an internal erase, program or write status register cycle is in progress. When /CS is brought low the device will be selected, power consumption will increase to active levels and instructions can be written to and data read from the device. After power-up, /CS must transition from high to low before a new instruction will be accepted. The /CS input must track the VCC supply level at power-up (see “Write Protection” and Figure 38). If needed a pull-up resister on /CS can be used to accomplish this.4.2 Serial Data Input, Output and IOs (DI, DO and IO0, IO1, IO2, IO3)The W25Q128BV supports standard SPI, Dual SPI and Quad SPI operation. Standard SPI instructions use the unidirectional DI (input) pin to serially write instructions, addresses or data to the device on the rising edge of the Serial Clock (CLK) input pin. Standard SPI also uses the unidirectional DO (output) to read data or status from the device on the falling edge of CLK.Dual and Quad SPI instructions use the bidirectional IO pins to serially write instructions, addresses or data to the device on the rising edge of CLK and read data or status from the device on the falling edge of CLK. Quad SPI instructions require the non-volatile Quad Enable bit (QE) in Status Register-2 to be set. When QE=1, the /WP pin becomes IO2 and /HOLD pin becomes IO3.4.3 Write Protect (/WP)The Write Protect (/WP) pin can be used to prevent the Status Register from being written. Used in conjunction with the Status Register’s Block Protect (CMP, SEC, TB, BP2, BP1 and BP0) bits and Status Register Protect (SRP) bits, a portion as small as a 4KB sector or the entire memory array can be hardware protected. The /WP pin is active low. When the QE bit of Status Register-2 is set for Quad I/O, the /WP pin function is not available since this pin is used for IO2. See Figure 1a-c for the pin configuration of Quad I/O operation.4.4 HOLD (/HOLD)The /HOLD pin allows the device to be paused while it is actively selected. When /HOLD is brought low, while /CS is low, the DO pin will be at high impedance and signals on the DI and CLK pins will be ignored (don’t care). When /HOLD is brought high, device operation can resume. The /HOLD function can be useful when multiple devices are sharing the same SPI signals. The /HOLD pin is active low. When the QE bit of Status Register-2 is set for Quad I/O, the /HOLD pin function is not available since this pin is used for IO3. See Figure 1a-c for the pin configuration of Quad I/O operation.4.5 Serial Clock (CLK)The SPI Serial Clock Input (CLK) pin provides the timing for serial input and output operations. ("See SPI Operations")5.BLOCK DIAGRAM ArrayFigure 2. W25Q128BV Serial Flash Memory Block Diagram分销商库存信息: WINBONDW25Q128BVEIG。
电容电阻规格书.
贴片器件也分好多种，容量大致是从1PF到1UF吧；
而最新的“双电层电容器”可以把容量做到几个法拉！
1、标称电容量和允许偏差
标称电容量是标志在电容器上的电容量。 电容器实际电容量与标称电容量的偏差称误差，在允许的偏差范围称精度。 精度等级与允许误差对应关系：00（01）-±1%、0（02）-±2%、Ⅰ-±5%、Ⅱ-±10%、Ⅲ-±20%、 Ⅳ-（+20%-10%）、Ⅴ-（+50%-20%）、Ⅵ-（+50%-30%） 一般电容器常用Ⅰ、Ⅱ、Ⅲ级，电解电容器用Ⅳ、Ⅴ、Ⅵ级，根据用途选取。
（5） 损耗：在电场的作用下，电容器在单位时间内发热而消耗的能量。这些损耗主要来自介质损耗和金属损耗。通常用损耗角正切值来表示。
（6） 频率特性：电容器的电参数随电场频率而变化的性质。在高频条件下工作的电容器，由于介电常数在高频时比低频时小，电容量也相应减小。损耗也随频率的升高而增加。另外，在高频工作时，电容器的分布参数，如极片电阻、引线和极片间的电阻、极片的自身电感、引线电感等，都会影响电容器的性能。所有这些，使得电容器的使用频率受到限制。
二、电容器的分类
1、按照结构分三大类：固定电容器、可变电容器和微调电容器。
2、按电 解质 分类有：有机介质电容器、无机介质电容器、电解电容器和空气介
质电容器等。
3、按用途分有：高频旁路、低频旁路、滤波、调谐、高频耦合、低频耦合、小型
电容器。
4、频旁路：陶瓷电容器、云母电容器、玻璃膜电容器、涤纶电容器、玻璃釉电容
X7R电容器主要应用于要求不高的工业应用，而且当电压变化时其容量变化是可以接受的条件下。它的主要特点是在相同的体积下电容量可以做的比较大。
汽车英语-B
B(base booster) 基础增压器B layer B层B&S 美国电线径规，铜线径规B&W 黑与白B+ 蓄电池正级B-REP 边界线标志B.E.S.T. 平衡，动力（能量），安全科技B/D 后门，尾门B/JNT 球形接头B/L (计时)基线,扫描行；原始资料,基本的,原始的B/M 材料单B/MAP sensor 大气和进气歧管绝对压力传感器B/P 背压B/S 出售清单B/W 后窗B0 超速制动器（自动变速器）B1 第二滑行制动器B2 第二制动器B3 第一档和倒档制动器BA 后备援助BAB(babbit) 巴比特合金（巴氏合金）BABT 正要BAC 旁通空气控制（阀）Baby 小型的微型的Baby car 微型轿车超微型轿车Baby lift 小型举升机Baby tractor 小型拖拉机小型牵引车Baby truck 小型货车微型货车Back 背面后面反面Back astern 倒车Back away 倒车后退Back axle 后轴后传动轴后桥Backblast 反馈反冲Back bearing 后轴承Backbone road 主要道路Back check (对已完成工作的)检查检验Back coat 底面涂层Back current 逆流反向电流back door 背门back exit 后门急救出口back fire 回火back firing 回火backfire by-pass valve (进气管)回火防止阀backfire test 回火测试backfiring in the silencer 消声器放炮back flush 逆向清洗back haul 回程backing block 制动块backing coil 反接线圈补偿绕组backing lamp 倒车灯back light 后窗玻璃从后方照射back lamp 尾灯back off 拧下back plate 离合器盖Back pressure Transition 背压转换器back probe 用探针从后面探测back tilt adjuster 靠背角度调节器back wall 后围back wall pillar 后围立柱back window glass 后窗玻璃Back-electromotive force 反电动势back-up 倒车灯back-up buzzer 倒车报警器back-up lamp 倒车灯back-up lamp switch 倒车灯开关back-up light 倒车灯Back-up Power Supply 备用电源Back flush 反向冲洗Backing plate 底板backlash 齿隙backlight 背景灯backpressure 背压Back probe 探测（不可照搬翻译）Back view mirror 后视镜Back wheel 后轮Backrest 靠背backup lamp 刹车灯backup light 倒车灯BACS 拔海增压补偿油量限制器BACV 旁通空气控制阀bad condition of vehicle 汽车不良技术状况bad conductor 不良导体bad contact 接触不良接地不良bad earth 接地不良bad feature 缺点缺陷baffle 档板baffler 消声器阻尼器BAG 行李bag analysis 袋式分析bag filter 滤袋式滤清器Bag tethers 气囊加强带Baggage car 行李车Baggage compartment 行李仓baggage holder 行李架BAL RHEO 补偿变阻器Balance 平衡balance gas 平衡气balance weight 平衡质量balance state 平衡状态balancer 平衡BALCL 补偿线圈ball 钢球ball bonding 球形接头ball clack 球阀ball cup 球头座ball head 球头轴ball Spline Rzeppa universal joint 滚动花键球笼式万向节ball stud 球头销ball universal joint 球销式万向节ball yoke 球叉ballade 巴拉得BALLAST 附加BALLAST BYPASS 起动旁通继电器ballast bypass relay 镇流电阻旁通继电器ballast resistor 附加电阻，平衡电阻BALLAST RESISTORS 附加电阻Barrel 桶（量词）Ball joint = spherical connection 球头节，平衡重bob-weight 配重balance resistor 平衡电阻band 制动带Band filter 频带滤波器band spring 带状弹簧Band width 频率宽度banisters 扶手Banjo axle 整体式车桥banjo axle housing 整体式桥壳banjo bolt 对接螺栓Bank 列，组barometric absolute pressure sensor 大气绝对压力传感器BAP 大气绝对压力传感器bar 巴bar capstan 推杆绞盘, 人力绞盘Bar-type cylinder gauge 杆式气缸量规BARO 大气压力BARO sensor 大气压力传感器BARO-OUT 大气压力信号输出BARO. 大气压力的barometric 大气压的, 气压表的barometric & manifold absolute pressure sensor 大气压和进气歧管绝对压力传感器barometric absolute pressure sensor 大气绝对压力传感器barometric pressure 大气压力barometric pressure sensor 大气压力传感器barometric/manifold absolute pressure sensor 大气和进气歧管绝对压力传感器BARR 气压读取电磁线圈（涡轮增压器）barrel 桶BARV 大气压力电压BAR（L）桶BAS 电子制动助力系统base (三极管)基极base metal catalyst 普通金属催化剂base mounted fuel injection pump 平底安装式喷油泵basic 基本basic diagnostic 基本诊断basic information 基本信息basic system voltage 标称电压basic testing 基本测试basic transmission 主变速器basin shaped combustion chamber 盆形燃烧室BASNET 基本网络BAST 最佳可用的系统技术BAT 蓄电池BATCHG 蓄电池充电器BATNO 批号BATT TEMP 电瓶温度BATT. 蓄电池Battery 蓄电池Battery case 蓄电池壳体Battery cell 蓄电池单元Battery change-over switch 起动转换开关battery charging 电瓶充电机battery charging condition indicator 蓄电池充电状况指示器battery charging condition tell-tale 蓄电池充电状况报警灯battery compartment 蓄电池箱battery compartment door 蓄电池箱门battery cut-out relay 蓄电池切断继电器Battery hydrometer 蓄电池液体比重计Battery in quantity 并联电池组battery isolating switch control 蓄电池断路器操纵件Battery jar 蓄电池外壳Battery main switch 蓄电池总开关battery negative terminal 蓄电池负极接线柱Battery plate group 蓄电池极板组battery plug 电源插头battery positive terminal 蓄电池正极接线柱Battery post 蓄电池接柱battery power cable 电瓶线缆battery socket 电源插座battery solution 电解液battery terminal “B”接线柱battery to body 电池接地Battery Tray 蓄电池托架BATTERY VOLTS 电瓶电压Bayonet socket 卡口插座BB 升压电池组BBC 保险杠前沿至驾驶室后壁外侧的距离BBDC 下止点前Bbl. 桶BBM 先开后合，先断后连BBR 镇压流器旁通继电器BBRG 球轴承，滚珠轴承BBS 积木式结构方式，组合式方式BBV 制动助力真空（传感器）BC 螺栓分布圆BC-junction 基极--集电极结BCC 组块校验字符BCD 二－－十进制记数法，二进制编码的十进制BCDC 减速工况废气净化循环BCDD 混合比加浓式废气净化（HC）装置BCDD cut 减速时使废气中HC含量减少装置的断开系统BCEP 制动平均有效压力BCI 二进制编码信息BCL 基本轮廓线BCM 车体控制模块BCO 电池电路自动断路器BCS 增压补偿油量限制器BCSO 由于BCS（BEC）因为BCT 开形电流互感器，通心变流器BCU 缓冲控制器BCV （日本铃木汽车，三菱汽车）强制怠速工况进气管真空（负压）控制阀BCWR （轮胎）底层胎面磨损率BD 面板，座，盘，仪表板，局，部BDAM 基本直接存取法BDC 下止点BDG 制动毂测量表BDL 制动毂车床BDP 下止点BDTH 宽度，幅度BDU 主显示器BDV 击穿电压BDZR 推土机BE 被BE EQUIPED WITH 装有bead seat 胎圈座bead seat angle 胎圈座角度bead seat optional contours 可选择的胎圈座轮廓bead seat radius 胎圈座圆角半径bead seat ring 座圈bead seat width 胎圈座宽度beam 梁beam adjusting disk plate 调光座盘Beam axle 光束轴beam center 光束中心Beam intensity 光束亮度Bearing bracket 轴承座Bearing cup 轴承外圈Bearing play 轴承间隙bearing placer(09612-10061) 轴承拆装工具BECM 车身电子控制模块bed plate 机座BEF 在…之前before bottom dead center 下止点前before preforming maintenance on vehicle 在就车作保养前before top dead center 上止点前BEG 开始beginning of injection 喷油始点BEL 在…下边BELI 制动液液面指示器belleville spring 碟形弹簧盘形[贝氏]弹簧below throttle valve EGR system 节气门后EGR系统belt 皮带belt line 腰线belt retractor 安全带张紧装置Belt Tension 皮带张力belt retractor 皮带张紧装置belt-driven 皮带驱动bench 台架bench seat 长条座椅bench seat with split back 组合式座椅Bench Testing 台架测试bendix drive 惯性式离合器邦迪克斯式离合器bent eight,bentsix,V-8 V-6 engine V型8缸或V型6缸发动机BET 在……之间better 更好bettry 电瓶充电bevel epicyclic hub reductor 行星锥齿轮式轮边减速器bevel gear 斜齿轮bevel gear differential 锥齿轮式差速器beverage holder 茶杯座BEVO 在排气门开启前Bezel 挡板BE’玻美（度）BF 双面，两面BFC 制动力系数BFI 制动感知（触）指数BFL 隔板,节气门BFO 拍频振荡器BFR 缓冲器BG 轴承BGE 米色，粽灰色BGF 已燃气百分率，废气百分率BGN 开始BGR 已燃气比率，废气率BH （模）块处理器BHD 在……后面BHP 制动功率BHS 双金属热传感器BI-LEV 双（排、极）触点按钮，（冷热）混合空气按钮bias 边斜角BID 无断开器诱导(电感)放电big end bearing 连杆大头轴承bimetallic fuel indicator 双金属式燃油表bimetallic oil pressure indicator 双金属式机油压力表bimetallic oil pressure sensor 双金属式机油压力传感器bimetallic temperature indicator 双金属式温度表bimetallic temperature sensor 双金属式温度传感器bimetallic vacuum switching valve 双金属真空开关阀BIN 二进制BIND 连接binding 压条binding end cap 压条封盖binding post 接线柱BINOMEXP 二项式展开BIOS 基本输入/输出系统BIP 活塞顶凹穴(燃烧室)BIRY 电池，蓄电池BIST 车载（机载）自检（诊断）装置机内自测试BIT 车载信息终端BITE 车载式检验设备Bitonal horn 双音喇叭BITUM 沥青的，含沥青的BIU 总线接口装置BJT 双极结晶体管BK 背后,背部BKDN 破坏，损坏，破裂，断裂，故障，事故停车BKG 反向BKL 扣环BKLS 防抱死制动系统制动信号灯开关BKSC 防抱死制动系统制动开关电路BKSN 制动信号开关BKSS 防抱死制动系统制动开关BKT 水桶BK（B/K，BRK）制动BL 底层BLA 黑色black 黑色black smoke 黑烟Black-out lamp 防空灯black-out lamp switch 防空灯开关blade 叶片blade angle shift 叶片转位blade angles 叶片角blade socket 片式插座blade terminal 接线片BLB 灯泡BLDG 建筑物,大厦BLDR 建筑工人，营造者BLEDR 放水器bleed 流动Bleed orifice 放气孔Bleed system 系统放气bleeder 放气螺塞Bleeder cap 放气塞盖bleeder screw 放油螺钉Bleeder valve 放气阀bleeding 放气bleeding brake system 制动系统放气Blistered electrode 火花塞电极氧化BLK 空白,空格,断开,熄灭BLM 基本语言机器BLMC 组块学习单元BLME 使组块学习成为可能BLML 左组块(左模块)BLMR 右组块(右模块)BLMS 增压器马达控制开关BLMT 鼓风机马达开关BLO 鼓风机,增压机block 机体blow-by 漏气Blow-by meter 曲轴箱窜气量测定仪blowby gas 窜气blower 鼓风机, 增压器blower fan 鼓风机风扇Blower High Relay 鼓风机高压继电器blower horsing 鼓风机外罩blower motor 鼓风机电动机blower unit 鼓风装置BLP 麻袋,粗麻布BLR 本地不能修理BLR(Blower) 增压机BLS 制动信号开关BLSR 流线型外罩,气孔,折叠,天线屏蔽器BLST 配重Blst. 配重BLS（NC）倒车灯开关（常闭型）BLS（NO）倒车灯开关（常开型）BLT 螺栓BLU 蓝色blue 蓝色blue smoke 蓝烟BLVD 林荫大道，（宽阔的）大马路BLW 在……下面BLWD 增压器延迟Blwr 空调鼓风机BL（BLU）蓝色的BM 弯矩，挠矩BMAP 大气与进气歧管绝对压力传感器BMC 车后监控照相机BMI 大容量存贮器接口BMP 基准程序BMPR 保险杠BMTLC 双金属的BWM 宝马BN 在…之间BND DIS 波段显示BNDZ 涂磷，磷化BNE（B&E）开始和结尾BNH 抛光，精加工，烧蓝BOB 分（断）开接头箱，分线盒，断线箱，接线插头BOC 别克·奥兹莫比尔，凯迪拉克（分部）body 车体body accessories 车身附件body assembly 车身Body bumping tool 车身修整工具body chassis frame construction 非承载式车身body control computer 车身控制电脑body control module 车身控制组件body frame 车身骨架body mechanism 车身机构body outer panel 车身覆盖件body pressure distribution 体压分布body shell 车身本体body skeleton 车身骨架body skirt 车身裙部body structural member 车身结构件body structure 车身结构件Body type 车身型式body understructure 底架body work length 车身长度body work length of chassis with driver's cab 带有驾驶室的底盘上的车身长度body work length of passenger car and bus 轿车和客车车身长度body-chassis frame construction 非承载式车身Body/ transmission type 车身/变速器型式Body/transmission type 车身/变速器型式BOF 车身在框架上面BOI 检验中断BOLS 车架承梁bolster cloth 拉形条Bolster Seat 鞍式座椅bolster wire 拉形钢丝Bolt 螺栓BOND 胶接bond strap 接地线Bond cable 屏蔽接地电缆Bonfire test 火烧试验bonnet 发动机罩BOO 制动器通断开关BOOS 助力器BOOST 增压boost charge 辅助充电BOOST PRESS 助力压力Boost valve 调节器增压阀booster venturi 小喉管Booster/enhancer 助燃剂/增强剂Boot 保护罩boot lid 行李箱舱boots 护套bore 孔径boss 毂BOTH 双门关闭bottom dead center 下止点bottom end bearing 连杆大头轴承bottomming 触底感bounce 跳振bourdon tube pressure gauge 弹簧管式压力表，波登管式压力表bourdon tube temperature gauge 弹簧管式温度表，波登管式压力表bowl vent valve 浮子室通风阀box spanner 套筒扳手BP 大气压力传感器BP/EGR EGR系统背压BP/EGR-CS EGR系统背压控制电磁阀BPA 旁通空气BPC 背压控制BPCU 总线功率控制装置BPMV 制动压力调节器阀门BPR 磷化处理与上底漆BPS 位/每秒BPSEGR 背压传感器废气再循环BPT 背压转换器brace 支撑拉杆bracing piece 斜撑Brake bleeder 制动系放气孔bracket 支架，托架bracket lamp 壁灯Braided Wire 编织导线BRAK 制动开关已被使用上brake 制动brake booster 制动增压器Brake cable 制动器拉索Brake caliper 制动钳Brake depressor 制动踏板压下器Brake drum lathe 制动鼓车床brake fluid level 制动液液面brake fluid level sensor 制动液面传感器Brake Fluid packet 制动液储存器Brake flusher 制动液自动更换装置Brake guard 制动器护罩brake horsepower 制动功率Brake intervention 制动调节brake light 制动灯brake light failure sensor 制动灯故障传感器brake lines 制动系统拉索brake lining 制动管brake oil 制动油制动液brake on-off switch 制动器通-断开关Brake pad 制动衬块Brake Pad Wear Sensor 制动衬块磨损传感器Brake Pedal Bracket 制动踏板支架brake pedal 制动踏板brake pipe 制动管道brake piston 液压制动活塞brake power 制动功率brake pull cable 制动拉索brake release 松开制动制动放松brake release spring 制动复位弹簧brake reservoir 制动液储液罐brake resistance 制动阻力brake rotor 制动盘Brake shoe 制动蹄Brake-shoe back spring 制动回位弹簧Brake shoe grinder 制动蹄片磨削装置brake shoes 制动蹄片brake spider 制动器底板brake stop 制动停车brake test 制动测试brake system light 制动系统灯Brake-Transaxle-Shift Interlock 制动、变速驱动桥、换档联锁装置Brake-Transmission-Shift Interlock 制动、变速、换档联锁装置braking adhesion coefficient 制动附着系数braking distance 制动距离braking effect 制动效果制动性能braking force 制动力braking force coefficient 制动力系数braking stiffness 制动刚度braking stiffness coefficient 制动刚度系数braking torque 制动扭矩braking time 制动时间braking trace 制动轨迹braking with the motor 发动机制动bearing 轴承brass drift 黄铜冲子BRAT 非全时四轮驱动轻型旅行越野汽车BRAV 适用的制动器BRD 编织物BRDG 桥，电桥BRDR 边界Break 断路break away 侧滑Break contact 断开触点breaker 断电器breaker anvil 断电器触点breaker arm 断电器臂breaker -point ignition 触点式点火系统breaker cam 断电器凸轮breaker cover 断电器盖breaker point 白金breaker-point ignition 触点式点火系统breakerless ignition 无触点点火breakerless ignition system 无触点点火系统breaking 断开短路break-out torque 安全装置BRG 轴承BRH 电刷座，电刷支持器BRI 光亮bridge piece 横臂BRIDGE stone 日本石桥轮胎公司bright viewing distance 认视距离British thermal unit 英国热量单位 (=252卡)BRK 制动器BRKR 断电器Brkr. 断电器BRKT 托架，支架BRL 桶，腔（化油器腔数）BRN 棕色Brown 棕色BRPC 制动压力电路BRS 黄铜BRT 明亮（亮度）brush 电刷brush adjustment 电刷调整brush carrier 电刷架brush cover 电刷盖整流子盖brush holder 电刷架brush spring 电刷弹簧brushless alternator 无刷交流发电机brushless DC motor 无刷直流发电机brushless motor 无刷电动机brush sparking 电刷火花brush pressure 电刷压力brush voltage 电刷电压BRZ 铜焊BRZG 钎焊BR（BRN）棕色BS & W 底部沉积物与水BSAM 基本顺序存取方法BSC 基准尺寸BSCO 制动功率比-氧化碳排放量BSFC 制动功率比油耗BSG 制动靴磨床BSHC 制动功率比碳氢化合物排放量BSLR 总线选择器BSMT 基础，基底，地下室BSN 制动滑行数BSNOx 制动功率比氮氧化物排放量BSP 英制管螺纹BSPD 制动功率比废气固体颗粒排放量BSS 英国标准技术规范BSSE 制动功率比硫化物排放量BSSOF 制动功率可溶有机物排放率BSTP 增力压力，助力压力BSTPM 制动功率比总颗粒排放量BSTS 增压电磁线圈BSTV 增压压力电压BSU 波许（博世）烟度值BSW 黑色侧墙BSWG 英国标准线规BSWT 英国惠氏标准螺纹BT 助力器测试表，升压器测试仪BT-T 蓄电池温度BTA 镗与钻联合加工BTC 在上止点前BTCK 制动警示灯电路BTCS 制动牵引力控制系统BTCU 气息测试校准装置BTDC 在上止点前BTE 制动热效率BTL 无变压器平衡（电路）BTM 底部BTN 按钮，钮BTR 读带机旁通系统BTS 蓄电池温度传感器BTTC 制动警示指令BTU 英国热量单位（1磅水上升1°F所需热量为251.9958卡）BTV 基本运输车辆BTX 苯，甲苯和二甲苯（混合物）BU-F 备用燃料Buck 冲动bucket seat 斗式座椅buckle 锁扣buckle switch 锁扣开关buffer stopper 缓冲块BUICK 别克BUICK CAMS 别克汽车计算机化自动保养系统built-in check ball 内装单向阀门球Built-in sensor 内装式传感器built-in smokemeter 内装式烟度计built-in voltage regulator 内装式调节器built-up crankshaft 组合式曲轴bulb 灯泡Bulb adaptor 灯泡接头Bulb contact 灯泡接电触点Bulb Holder 灯座Bulb socket tag 灯泡灯座片Bulkhead 横隔板bulkhead connector 隔板接头BULL(bulletin)公报，公告bumper 保险杠bumper arm 保险杠托架bumper bracket 保险杠托架bumper guard 保险杠防撞块bumper pad 保险杠镶条bumper stay 保险杠托架burning 燃烧变形burner 喷枪burner bore 喷油孔burner solenoid 喷油器电磁阀burning rate 燃烧率burning speed 燃烧速度burning time 燃烧时间burning oil 燃油burning mixture 可燃混合气Burst test 爆破试验BUS 业务，商业，贸易，交易，实业，事务，工作，公交车Bus body 客车车身Bus chassis 客车专用底盘Bus engine 客车发动机BUSH 衬套Bush chain 套筒链Bushing 衬套BUT 但是butterfly valve 碟形阀button 键BUV 倒车（挡）阀BUZ 蜂鸣器，信号器buzzer 蜂鸣器Buzzer Circuit Test 蜂鸣器电路测试BV 后视图BVSV 双金属式（水温或进气温度传感控制）的真空开关阀BVT 回流与压力集结阀BVV 浮子室通风阀BWG 伯明汉线径规BWG（德文）电力气动制动阀门传感器BWL 环形工作线BWP 防水的，不透水的BY 由BY PASS 旁路Bypass pipe 旁通道by-pass air control 旁通空气控制by-pass control solenoid 旁通控制电磁阀by-pass control solenoid valve 旁通控制电磁阀by-pass type oil filter 分流式机油滤清器by pass valve 旁通阀BYD 在……之外BYP 旁通,回流BZ 蜂鸣器BZL (仪表)玻璃框,挡板B（BG）袋，包，囊B（BLK）黑，黑色B＋电瓶正极（可不译）。
集成电路中英文对照表
集成电路中英文对照表A天线,安培BPA带通放大A.ADJ自动调整BPF带通滤波器ABC自动亮度控制BRIGHT亮度ABL自动亮度限制BRIGHTNESS亮度AC交流BROWN棕色ACC自动色度控制BUFFER缓冲器ACK自动消色BURST色同步信号ACＯＦＦ交流关机Ｂ／Ｗ黑／白ＡＤＤ地址Ｃ色度（信号），电容ＡＤＪ调节，调整ＣＡＤ计算机辅助设计ＡＥＲＩＥＬ天线,安培ＣＡＭ计算机辅助制造AFAMP音频放大器CANCELLER消除器AFC自动频率控制CASTLE沙堡AFT自动频率调整CATV天线电视AGC自动增益控制C-BAND C-波段AM调幅CCD电荷藕合器件AMP放大器CCTV闭路电视AMPLITUDE副度CD光盘APC自动相位控制,比较CENTER中央,中心AND与,与门CH频道,同道ATT衰减,衰减器CHG充电ATTENUATOR衰减器CHROMA色度信号AUDIO音频放大器CLAMP箝位AUTO自动CLAMPER箝位电路AUDIO-SLECT自动选择CLEAR消除器A V音,视频CLOCK时钟A V-IN音.视频输入COIL线圈A VR自动电压调整COIN符合B蓝色COLLECTOR集电极BAND波段COL彩色BAND-FILTER带通滤波器COLOR彩色BASE基极COLOR-DEM彩色,色度解调BASEBAND基带COMPENSATE补偿BASS低音CON对比度BASSAY加重低音CONTRASY对比度BBD斗链延迟器件CONT控制BD反相二极管CONTROL控制BDV击穿电压CONTROLLED被控,受控BEAM电子束流CONVERTER变换器BEAT差拍COR较正BEL-FILTER钟形滤波器COUNT-DOWN分频器BEMF反电动势CPU中央处理器BF反馈CRT显像管BFO反馈振荡器CTV彩色电视机BIAS偏置CUT-OFF截止,切断,关机BLACK黑色CVBS复合全电视信号BLACK-STRETCH黑电平扩展,延伸DAC数模转换器BLANKING消隐DAGC延迟式自动增益控制BLK消隐DAMPING阻尼BLUE蓝色DARK黑暗,暗的BOARD板DATA数据,资料DB分贝FM-DISCRI调频鉴频器DC直流,直接藕合FOCUS聚焦DECODE®解码器FORCED强制的DEFEAT失效,无输出FRAME帧DEFL偏转FREQUENCY频率DEGAUSSER消磁器FREQ-ADJ频率调整DELAY延迟FUNC功能,作用DEMOD解调器FSC色副载波频率DEMONSTRATE演示FUSE保险丝DEMODULATOR解调器G绿色DET检波GAIN增益DETECTOR检波器GATE门,选通DEVIDER除法器GB国标DG微分增益GENERATOR发生器DIFF微分,差动GND地DIFFER-AMP差动放大器GP门控脉冲DIP双列直插塑料封装GREEN绿色DIS放电H行.水平DISCR鉴频器HALF-TONE半色调控制D.L延迟线HAR谐波DLY延迟H.BLK行消隐DOWN向下H.COIN行同步DP微分相位H.DRIVE行推动DRAM动态随机存取存储器HEATER灯丝DRIVE激励,驱动HF高频DRIVER激励器,驱动级HFA高频放大器DY偏转线圈HF-AMP高频放大器EARTH接地,地线HFC高频扼流器ECHO混响,回声HI-Q高品质因数EHT超高压HFO高频振荡器EHV超高压H-LOCK行锁定EMITTER发射极HOLD同步,保持ENCODE编码HOLD-IN同步,保持ENCODER编码器HOR行,水平的E2PROM电可擦可编程只读存储器H.COUNTDOWN行分频器EVEN偶数HOR DRIVER行推动器,驱动器EXT外接HOR.OSC行振荡器E/W东/西(枕较)HP高通,大功率FB反馈H.PARABOLA行抛物波F频率HPF高通滤波器FAST快速HTR灯丝FBL快速消隐HUE色.色彩.色调FBP快速消隐脉冲HVPS高压电源FBT行输出变压器HW半波FEED.BACK反馈HZ赫兹FIG图IAGC瞬时动做的自动增益控制FILTER滤波器IA VC瞬时动做的自动音量控制FILP-FLOP双稳态触发器IC集成电路FLY.BACK逆程I2C>BUS I2C总线FM调频ID识别,鉴别FM.DET调频检波IDENT识别,鉴别IF中频LOCK锁定IFAMP中频放大器LOCK IN锁住,同步IFT中频变压器LOOP环路IMMR维修,修理LOOPER斩波器IMPULSE脉冲LOW低,弱的IN英寸LPF低通病滤波器INPUT输入LSO行稳定振荡器INH反时钟方向的ISP行同步脉冲INSERTION插入MAIN主板INSTL安装MAINT维修,保养INT内.内部的MANUAL手动INTERGRTON集成,积分MARK符号INTERFACE接口,接口电路MASK屏蔽掩膜INTERLACING隔行扫描MATCH匹配INTERMEDATE中间,中频MATRIX矩阵INTAG积分,集成MATRIXER矩阵变换电路INTMT间断的MAX最大INVTR变换器MBF调制器带通滤波器I/O输入,输出M-D调制_解调IQ.DEMOD IQ信号解调MEMORY记忆.存储器ISOLATOR绝缘体.隔离器MHZ兆赫兹JUMP,飞线MIC话筒,麦克风JUNC连接器.连接点MIX混频,混合JUNGLE混合式MIXER混频器K-BAND K.波段MODE模式.状态KEY键MODULATOR调制器带通滤波器KEY-BOARD键盘MODULE模块.组件KEY.CODER键盘编码器MONITOR监视器KILLER消色器MONOCHROME单色的KINE电视显像管MONOSTABLE单稳态KP键控脉冲MOS金属氧化物半导体KEY.PULSE键控脉冲MOSFET场效应管L(CH)左声道,左通道MOST晶体管LAYOUT布线.电路布局MP维修点LED发光二极管MPL维修部分清单LIGHT发光二极管MPO最大功率输出LINEAR线性MRR维护.更换LEVEL电频,水平MSB最高位L.C.R电感.电容.电阻MULTSTANDARD多制式LD激光视盘MULTI.SYSTEM多制式LFA|低频放大器MULTI-TAP多抽头,插头MUSIC音乐MUTE静音LFF|LFO低频振荡器MVB多频振荡器LIMITER限幅器MVC手动音亮调节LINEAR线.线路MVS最小视频信号LINE.WIDTH行幅.线宽NAND与非门LIST目录.一览表NB窄频带LIVC低输入变换器NBFM窄带调频LIVCR低输入变换器及稳压器NC空脚.不接LOAD负载.输入加载NEG负的.负极行NEW新的PCB印刷电路板NF负反馈PCM脉冲编码调制NOISE噪声PD电位器NORTH北方PEAK峰值NOT非PP峰峰值NOT.GATE非门PEAKED>AMP峰值放大器NR噪声抑制PEAK_DET峰值检波器NTC-UNIT负温度系数元件PEM脉冲编码调制NTSC NTSC制式PF皮法拉NTI电路杂音干扰PHASE相位O输出PHASE>DET相位检波OC开路PHASE.CONTROL相位控制OCB过载断路器PHASE.SHIFTER移相器OCL无耦合电容输出电路PHASOR彩色信息矢量OSC周期变化的彩色顺序PHILIPS飞利浦ODD奇数.单数PHONIC声音的,有声的ODD-EVEN奇偶的PIF图像中频IC集成电路资料]:专业术语常用名词缩写中英文对照A:Actuator执行器A:Amplifier放大器A:Attendance员工考勤A:Attenuation衰减AA:Antenna amplifier开线放大器AA:Architectural Acoustics建筑声学AC:Analogue Controller模拟控制器ACD:Automatic Call Distribution自动分配话务ACS:ACCess Control System出入控制系统AD:Addressable Detector地址探测器ADM:Add/Drop Multiplexer分插复用器ADPCM:Adaptive Differential ulse Code Modulation自适应差分脉冲编码调制AF:Acoustic Feedback声反馈AFR:Amplitude/Frequency Response幅频响应AGC:Automati Gain Control自动增益控制AHU:Air Handling Unit空气处理机组A-I:Auto-iris自动光圈AIS:Alarm InDICation Signal告警指示信号AITS:Acknowledged Information Transfer Service确认操作ALC:Automati Level Control自动平衡控制ALS:Alarm Seconds告警秒ALU:Analogue Lines Unit模拟用户线单元AM:Administration Module管理模块AN:ACCess Network接入网ANSI:American National Standards Institute美国国家标准学会APS:Automatic Protection Switching自动保护倒换ASC:Automati Slope Control自动斜率控制ATH:Analogue Trunk Unit模拟中继单元ATM：Asynchrous Transfer Mode异步传送方式AU-PPJE:AU Pointer Positive Justification管理单元正指针调整AU:Administration Unit管理单元AU-AIS:Administrative Unit Alarm InDICation SignalAU告警指示信号AUG:Administration Unit Group管理单元组AU-LOP:Loss of Administrative Unit Pointer AU指针丢失AU-NPJE:AU Pointer Negative Justification管理单元负指针调整AUP:Administration Unit Pointer管理单元指针AVCD:Auchio&Video Control Device音像控制装置AWG:American Wire Gauge美国线缆规格BA:Bridge Amplifier桥接放大器BAC:Building Automation&Control net建筑物自动化和控制网络BAM:Background Administration Module后管理模块BBER:Background BLOCk Error Ratio背景块误码比BCC:B-channel Connect ControlB通路连接控制BD:Building DistributorBEF:Buiding Entrance Facilities建筑物入口设施BFOC:Bayonet Fibre Optic Connector大口式光纤连接器BGN:Background Noise背景噪声BGS:Background SOund背景音响BIP-N:Bit Interleaved Parity N code比特间插奇偶校验N位码B-ISDN:Brand band ISDN宽带综合业务数字网B-ISDN:Broad band-Integrated Services Digital Network宽带综合业务数字网BMC:Burst Mode Controller突发模式控制器BMS:Building Management System智能建筑管理系统BRI:Basic Rate ISDN基本速率的综合业务数字网BS:Base Station基站BSC:Base Station Controller基站控制器BUL：Back up lighting备用照明C/S:Client/Server客户机/服务器C:Combines混合器C:Container容器CA:Call ACCounting电话自动计费系统CATV:Cable Television有线电视CC:Call Control呼叫控制CC:Coax cable同轴电缆CCD:Charge coupled devices电荷耦合器件CCF:Cluster Contril Function簇控制功能CD:Campus Distributor建筑群配线架CD:Combination detector感温，感烟复合探测器CDCA:Continuous Dynamic Channel Assign连续的动态信道分配CDDI:Copper Distributed Data合同缆分布式数据接口CDES:Carbon dioxide extinguisbing system二氧化碳系统CDMA:Code Division Multiplex ACCess码分多址CF:Core Function核心功能CFM:Compounded Frequency Modulation压扩调频繁CIS:Call Information System呼叫信息系统CISPR:Internation Special Conmittee On Radio Interference国际无线电干扰专门委员会CLNP:Connectionless Network Protocol无连接模式网络层协议CLP:Cell Loss Priority信元丢失优先权CM:Communication Module通信模块CM:Configuration Management配置管理CM:Cross-connect Matrix交叉连接矩阵CMI:Coded Mark Inversion传号反转码CMISE:Common Management Information Service公用管理信息协议服务单元CPE:Convergence protocol entity会聚协议实体CR/E:Card reader/Encoder(Ticket reader)卡读写器/编码器CRC:Cyclic Redundancy Check循环冗佘校验CRT:Cathode Ray Tabe显示器，监视器，阴极射线管CS:Convergence service会聚服务CS:Cableron Spectrum旧纳档块化技术CS:Ceiling Screen挡烟垂壁CS:Convergence Sublayer合聚子层CSC:Combined Speaker Cabinet组合音响CSCW:Computer supported collaborative work计算机支持的协同工作CSES:Continuius Severely Errored Second连续严重误码秒CSF:Cell Site Function单基站功能控制CTB:Composite Triple Beat复合三价差拍CTD：Cable Thermal Detector缆式线型感温探测器CTNR:carrier to noise ratio载波比CW:Control Word控制字D:Directional指向性D:Distortion失真度D:Distributive分布式DA:Distribution Amplifier分配的大器DBA:Database Administrator数据库管理者DBCSN:Database Control System Nucleus数据库控制系统核心DBOS:Database Organizing System数据库组织系统DBSS:Database Security System数据库安全系统DC:Door Contacts大门传感器DCC:Digital Communication Channel数字通信通路DCN:Data Communication Network数据通信网DCP-I:Distributed Control Panel-Intelligent智能型分散控制器DCS:Distributed Control System集散型控制系统DDN:Digital Data Network数字数据网DDS:Direct Dignital Controller直接数字控制器DDW:Data Describing Word数据描述字DECT:Digital Enhanced Cordless Telecommunication增强数字无绳通讯DFB:Distributed Feedback分布反馈DID:Direct Inward Dialing直接中继方式，呼入直拨到分机用户DLC:Data Link Control Layer数据链路层DLI:DECT Line InterfaceDODI:Direct Outward Dialing One一次拨号音DPH:DECT PhoneDRC:Directional Response Cahracteristics指向性响应DS:Direct SOund直正声DSP:Digital signal Processing数字信号处理DSS：Deiision Support System决策支持系统DTMF:Dual Tone Multi-Frequency双音多频DTS:Dual-Technology SenSOr双鉴传感器DWDM:Dense Wave-length Division Multiplexing密集波分复用DXC:Digital Cross-Connect数字交叉连接E:Emergency lighting照明设备E:Equalizer均衡器E:Expander扩展器EA-DFB:Electricity AbSOrb-Distributed Feedback电吸收分布反馈ECC:Embedded Control Channel嵌入或控制通道EDFA:Erbium-Doped Fiber Amplifier掺饵光纤放大器EDI:Electronic Data Interexchange电子数据交换EIC:Electrical Impedance Characteristics电阻抗特性EMC：Electro Magnetic Compatibiloty电磁兼容性EMI:Electro Magnetic Interference电磁干扰EMS:Electromagnetic Sensitibility电磁敏感性EN:Equivalent Noise等效噪声EP:Emergency Power应急电源ES:Emergency SOoket应急插座ES:Evacuation Sigvial疏散照明ESA:Error SecondA误码秒类型ＡESB:ErrorSecondB误码秒类型ＢESD:Electrostatic Discharge静电放电ESR:Errored Second Ratio误码秒比率ETDM:Electrical Time Division Multiplexing电时分复用ETSI:European Telecommunication Standards Institute欧洲电信标准协会F:Filter滤波器FAB:Fire Alarm Bell火警警铃FACU:Fire Alarm Contrlol Unit火灾自动报警控制装置FC:Failure Count失效次数FC:Frequency Converter频率变换器FCC:Fire Alarm System火灾报警系统FCS:Field Control System现场总线FCU：Favn Coil Unit风机盘管FD:Fire Door防火门FD:Flame Detector火焰探测器FD:Floor DistributorFD:Frequency Dirsder分频器FDD:Frequency Division Dual频分双工FDDI：Fiberdistributed Data Interface光纤缆分布式数据接口。
莫西沙星治疗多重或泛耐药鲍曼不动杆菌引起的重症肺炎的方法
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KT3107A中文资料
DISCRETE SEMICONDUCTOR Transistors70 • Bipolar Transistors (continued)PartPin to PinCompatibilityPolarity РC max, W V CB max, V V CE max,V V EBmax,VI Cmax, m Аh FEV CE sat,VI CBO, μАF T, МHzNf, dB Package (Pads)KT6136A 2N3906 PNP 0.625 40 40 5 200 100…3000.40.05 250 TO-92KT6137A 2N3904 NPN 0.625 60 40 6 200 100…3000.30.05 300 TO-92 BC182BC182ABC182BNPN 0.5 60 50 6 100 120…450120…220200…4500.60.015 150 10 TO-92 BC183BC183ABC183BBC183CNPN 0.5 45 30 6 100 110…800110…220200…450420…8000.60.015 150 10 TO-92 КТ607А-4КТ607Б-42N4073 NPN 1.5 40 30 40 35 30 35 4 150 0.1 1000 700 TO-92 BC639 NPN 0.625 100 80 5 1500 ≥25 0.50.1 100 TO-92 BC640 PNP 0.625 100 80 5 1500 ≥250.50.1 100 TO-92 КТ646А КТ646БКТ646В2SC495 2CS496 NPN 1.0 60 40 40 60 40 40 4 1000 40…200 >150 150…3400.850.250.2510 10 0.05 250 TO-126 KT660A KT660Б BC337 BC338 NPN 0.5 50 30 45 30 5 800 110...220200 (450)0.5 1.0 200 TO-92КТ805АМ КТ805БМ КТ805ВМ КТ805ИМ KSD362 KSD773 NPN 30 300 45 30 5 5000 V KER >15>15>15 >252.53.0 1.0 TO-92 KT814AKT814БKT814BKT814ГBD136 BD138 BD140 PNP 10 40 50 70 100 5 1500 40…27540…27540…27530…2750.650 40 TO-126 KT815AKT815БKT815BKT815ГBD135 BD137 BD139 NPN 10 40 50 70 100 5 1500 40…27540…27540…27530…2750.650 40 TO-126 KT816AKT816БKT816BKT816ГBD234 BD236 BD238 PNP 25 40 45 60 100 5 3000 25…2750.6100 3.0 TO-126 KT817AKT817БKT817BKT817ГBD233 BD235 BD237 NPN 25 40 45 60 100 5 3000 25...2750.6100 3.0 TO-126 КТ8126А1 КТ8126Б1 MJE13007 MJE13006 NPN 80 700 600 400 300 9 8000 8...60 1.01000 4.0 TO-220 КТ8164А КТ8164Б MJE13005 MJE13004 NPN 75 700 600 400 300 9 4000 8...40 1.01000 TO-220 КТ8170А1 КТ8170Б1 MJE13003 MJE13002 NPN 40 700 600 400 300 9 9 1500 8 (40)1.01000 4.0 TO-126 КТ8176АКТ8176БКТ8176ВTIP31A TIP31B TIP31C NPN 40 60 80 100 60 80 100 5 3000 >25 1.2 3.0 TO-220DISCRETE SEMICONDUCTORTransistors71• Bipolar Transistors (continued)Part Pin to PinCompatibility Polarity РC max, W V CB max,V V CE max,V V EB max,V I Cmax,m А h FE V CE sat, VI CBO, μАF T, МHz Nf, dB Package (Pads) КТ8177АКТ8177БКТ8177ВTIP32A TIP32B TIP32C PNP 40 60 80 100 60 80 100 5 3000 >25 1.2 3.0 TO-220 КТ8212А КТ8212БКТ8212ВTIP41С TIP41B TIP41A NPN 65 60 80 100 60 80 100 5 6000 15…75 1.5 I CES =400 3.0 TO-220КТ8213А КТ8213БКТ8213ВTIP42C TIP42B TIP42A PNP 65 60 80 100 60 80 100 5 6000 15…75 1.5 I CES =400 3.0 TO-220MJE2955 PNP 75 70 60 5 1000020…100 1.1 1000 TO-220 MJE3055 NPN 75 70 60 5 1000020…100 1.1 1000 TO-220 КТ738А КТ739А TIP3055 TIP2955 NPN PNP 90 70 60 5 1500020…100 1.1 1000 TO-218 КТ732А КТ733А MJE4343 MJE4353 NPN PNP 125 160 160 7 160008…15 2.0 750 1.0 TO-218 КТ8224А КТ8224Б* BU2508A BU2508DNPN 100 1500700 7.5 8000 4…7 1.0 I ebo=1.0 100..187 TO-218КТ8225ABU941ZP NPN 155 350 5 15000>300 1.8 Veb=5.0V Iebo=20 TO-218 КТ8228А КТ8228Б* BU2525A BU2525DNPN 125 1500800 7.5 12000 5.0…9.5 5.0 I ebo=1.0 80…150 TO-218КТ8229А TIP35F NPN 125 180 180 5 2500015…75 1.8 I ceo = 1.0 3.0 TO-218 КТ8230А TIP36F PNP 125 180 180 5 2500015…75 1.8 1.0 3.0 TO-218 КТ8261А BUD44D2 NPN 25 700 400 9 2000 >10 0.65 0.1 TO-126 BUL44D2 NPN 40 700 400 9 5000 >10 0.65 0.1 TO-220 КТ8247А BUL45D2 NPN 75 700 400 12 5000 >22 0.5 100 TO-220КТ8248А BU2506F NPN 90 Vcek 1500700 7.5 5000 3.8…9.0 3.0 Icek, mA1.0TO-218 KT538A MJE13001 NPN 0.7 600 400 9 0.5 5…90 0.5 1000 4 TO-92 КТ8248А1 BU2506F NPN 90 Ucek 1500 700 7.5 5000 3.8…9.0 3.0 Icek,мА1.0 TO-218KT8290A BUH100 NPN 100 700 400 9 10000 >10 1.0 0.1 ТО-220 КТ8255А BU407 NPN 60 330 160 6 7000 >15 1.0 1.0 ТО-220 KT8270A MJE13001 NPN 0.7 600 400 9 0.5 5…90 0.5 1000 4 TO-126KT8296AKT8296БKT8296ВKT8296ГKSD882R KSD882O KSD882Y KSD882G NPN 10 40 30 5 3000 60…120100…200160…320200…4000.5 100 TO-126 KT8297AKT8297БKT8297ВKT8297ГKSB772R KSB772O KSB772Y KSB772G PNP 10 40 30 5 3000 60…120100…200160…320200…4000.5 100 TO-126KT872A KT872Б KT872B KT872Г* with clampingdiodeBU508А BU508 BU508DNPN1001500150012001500700 700 600 70061000>61.0 5.0 1.0 1.04.0TO-218KT928A 2N2218 NPN 0.5 60 60 5 0.8 20…100 1.0 5.0 250 TO-126KT928Б 2N2219 NPN 0.5 60 60 5 0.8 50…200 1.0 5.0 250 TO-126 KT928B 2N2219ANPN 0.5 75 75 5 0.8 100…300 1.0 1.0 250TO-126 KT940AKT940БKT940BBF459 BF458 NPN 10 300 250 160 3002501605 100 >25 1.0 0.05 TO-126 КТ969А BF469 NPN 6 300 250 5 100 50…250 1.0 0.05 60TO-126DISCRETE SEMICONDUCTOR Transistors72 • Power Bipolar Darlington TransistorsPart Pin to PinCompatibilityPolarityРC max, W V CB max, V V CE max, V V EB max, V I Cmax, m А h FE V CE sat, VICBO,μА F T, МHzPacka-ge KT8115AKT8115БKT8115BTIP127 TIP126 TIP125 PNP 65 100 80 60 100 80 60 5 5000 >1000 2.0 200 4 TO-220KT8116AKT8116БKT8116BTIP122 TIP121 TIP120 NPN 65 100 80 60 100 80 60 5 5000 >1000 2.0 200 4 TO-220КТ8214АКТ8214БКТ8214ВTIP110 TIP111 TIP112 NPN 50 60 80 100 60 80 100 5 2000 >500 2.5 1000 TO-220КТ8215АКТ8215БКТ8215ВTIP115 TIP116 TIP117 PNP 50 60 80 100 60 80 100 5 2000 >500 2.5 1000 TO-220KT8156A КТ8156Б BU807 NPN 60 330 150 2006 8000 >100 1.5 1000 TO-220KT8158AKT8158БKT8158BBDV65A BDV65B BDV65C NPN 125 60 80 100 60 80 100 5 12000>1000 2.0 400 TO-218KT8159AKT8159БKT8159ВBDV64A BDV64B BDV64C PNP 125 60 80 100 60 80 100 5 12000>1000 2.0 400 TO-218КТ8225А BU941ZP NPN 155 350 350 5 15000>300 2.7 100 TO-218КТ8251А BDV65F NPN 125 180 180 5 10000>100 2.0 0.4 TO-218KT972AKT972БKT972BKT972ГBD875 NPN 8.0 60 45 60 60 60 45 60 60 5 2000 >750 >750 750…5000 750…5000 1.5 1.5 1.5 0.95 200 TO-126KT973AKT973БKT973BBD876 PNP 8.0 60 45 60 60 45 60 5 2000 >750 >750 750…5000 1.5 1.5 1.5 200 TO-126• Unijunction TransistorsPart Pin to Pin Compatibility P max,W Vb, b2 max, V Ie pulse, A Ie rev, μA Veb sat,V ηPackage KT132A KT132Б 2N2646 2N2647 0.3 35 2.0 12.0 0.2 3.5 0.56…0.75 0.68…0.82 Case 22A-01KT133A KT133Б 2N4870 2N4871 0.3 35 1.5 1.0 2.5 0.56…0.75 0.70…0.85TO-92• Logic Level N-Channel MOSFETsPart Pin to Pin Compatibility Vds max, V Rds (on) Ohm Id max, A Vgs max, VP max, W Vgs (th),VPackageКП723Г IRLZ44 60 0.028 50 ±10 150 1.0…2.0 TO-220 КП727В IRLZ34 60 0.05 30 ±10 88 1.0…2.0 TO-220 КП744Г IRL520 100 0.27 9.2 ±10 60 1.0…2.0 TO-220 КП745Г IRL530 100 0.22 15 ±10 88 1.0…2.0 TO-220 КП746Г IRL540 100 0.077 28 ±10 150 1.0…2.0 TO-220 КП737Г IRL630 200 0.4 18 ±10 50 1.0…2.0 TO-220 КП750Г IRL640 200 0.18 18 ±1050 1.0…2.0 TO-220КП775А КП775БКП775В2SK2498А-В 60 55 60 0.009 0.009 0.011 50 ±20150 1.0…2.01.0…2.0 1.0…2.0TO-220DISCRETE SEMICONDUCTORTransistors73• Low Power MOSFETsPartPin to Pin Compatibility P max, W Vgs max, V Vds max,V Vgs(off), V Rds(on), Ohm Id max, A g fs,A/VPackageКП501А КП501Б КП501ВZVN2120 0.5 ±202402002001.0…3.0 1.0…3.0 10 10 15 10 >0.1 TO-92 КП502А BSS124 1.0 ±10 400 1.5…2.5 28 0.12 0.1 TO-92 КП503А BSS129 1.0 ±10400 1.5…2.5 28 0.12 0.1 TO-92КП504А КП504БКП504ВКП504ГКП504ДКП504ЕBSS88 1.0 1.0 0.7 0.7 0.7 0.7 ±102502502001802002000.6…1.2 8 8 8 10 8 8 0.32 0.14 TO-92 КП505А КП505БКП505ВКП505ГBSS295 1.0 1.0 1.0 0.7 ±1050506080.8…2.0 0.8…2.0 0.8…2.0 0.4…0.8 0.3 0.3 0.3 1.2 1.4 0.5 0.5 0.5 TO-92 КП507A BSS315 1.0 ±20 -50 -0.8…-2.00.8 -1.1 TO-92 КП508A BSS92 1.0 ±20-240 -0.8…-2.020 -0.15 TO-92КП509А9 КП509Б9КП509В9BSS131 0.36 0.50 0.36 ±142402402000.8…-2.0 0.6…-1.2 0.8…-2.0 16 8 16 0.1 0.25 0.1 0.06 0.14 0.06 SOT-23 КП510A9 IRML2402 0.54 ±12 20 0.7…-1.6 0.25 1.2 1.3 SOT-23 КП511A КП511Б TN0535 TN0540 0.75 ±20 350 400 0.8…-2.0 22 0.14 0.125 TO-92 КП523А КП523Б BSS297 1.0 1.0 ±20 ±14 200 200 0.8…2.0 0.8…2.0 2.0 4.0 0.48 0.34 0.5 0.5TO-92 КП214А9 2N7002LT1 0.2 ±40 60 1.0…2.5 7.5 0.115 0.08 SOT-23• Power N-Channel MOSFETsPartPin to Pin Compatibility Vds max, V Rds (on), Ohm Id max, AVgs max,V P max, W Vgs (th),VPackageКП723АКП723БКП723ВIRFZ44 IRFZ45 IRFZ40 60 60 50 0.028 0.035 0.028 50 50 50 ±20 150 2.0…4.0 TO-220 КП726А КП726Б BUZ90A BUZ90 600 2.0 1.6 4.0 4.5 ±20 75 2.0…4.0 TO-220 КП727А КП727Б BUZ71 IRFZ34 50 60 0.1 0.05 14 30±20 75 2.0…4.0 TO-220 КП728Г1,Г2 КП728С1,С2КП728Е1,Е2BUZ80A 700650 600 5.0 4.0 3.0 3.0 ±20 75 2.0…4.0 TO-220 КП739АКП739БКП739ВIRFZ14 IRFZ10 IRFZ15 60 50 60 0.2 0.2 0.3 10 10 8.3 ±20 43 2.0…4.0 TO-220 КП740АКП740БКП740ВIRFZ24 IRFZ20 IRFZ25 60 50 60 0.1 0.1 0.12 17 17 14 ±20 60 2.0…4.0 TO-220 КП741А КП741Б IRFZ48 IRFZ46 60 50 0.018 0.024 50 ±20 190 1502.0…4.0 TO-220 КП742А КП742Б STH75N06 STH80N05 60 50 0.014 0.012 75 80±20200 2.0…4.0 TO-218DISCRETE SEMICONDUCTOR Transistors74 • Power N-Channel MOSFETs (continued)PartPin to Pin Compatibility Vds max, V Rds (on), Ohm Id max, A Vgs max, VP max, W Vgs (th),VPackageКП743А КП743БКП743ВIRF510 IRF511 IRF512 100 80 100 0.54 0.54 0.74 5.6 5.6 4.9 ± 20 43 2.0…4.0 TO-220TO-126 КП743А1 100 0.54 5.5 ±2040 2.0…4.0 TO-126 КП744А КП744БКП744ВIRF520 IRF521 IRF522 100 80 100 0.27 0.27 0.36 9.2 9.2 8.0 ±20 60 2.0…4.0 TO-220 КП745А КП745БКП745ВIRF530 IRF531 IRF532 100 80 100 0.16 0.16 0.23 14.0 14.0 12.0 ±20 88 2.0…4.0 TO-220 КП746А КП746БКП746ВIRF540 IRF541 IRF542 100 80 100 0.077 0.077 0.1 28.0 28.0 25.0 ±20 150 2.0…4.0 TO-220 КП747А IRFP150 100 0.055 41.0 ±20230 2.0…4.0 TO-218 КП748А КП748БКП748ВIRF610 IRF611 IRF612 200 150 200 1.5 1.5 2.4 3.3 3.3 2.6 ±20 36 2.0…4.0 TO-220 КП749А КП749БКП749ВIRF620 IRF621 IRF622 200 150 200 0.8 0.8 1.2 5.2 5.2 4.0 ±20 50 2.0…4.0 TO-220 КП737А КП737БКП737ВIRF630 IRF634 IRF635 200 250 200 0.4 0.45 0.68 9.0 8.1 6.5 ±20 74 2.0…4.0 TO-220 КП750А КП750БКП750ВIRF640 IRF641 IRF642 200 150 200 0.18 0.18 0.22 18.0 18.0 16.0 ±20 125 2.0…4.0 TO-220 КП731А КП731БКП731ВIRF710 IRF711 IRF712 400 350 400 3.6 3.6 5.0 2.0 2.0 1.7 ±20 36 2.0…4.0 TO-220 КП751А КП751БКП751ВIRF720 IRF721 IRF722 400 350 400 1.8 1.8 2.5 3.3 3.3 2.8 ±20 50 2.0…4.0 TO-220 КП752А КП752Б КП752В Pilot ProductionIRF730 IRF731IRF732400 350 400 1.0 1.0 1.5 5.5 5.5 4.5 ±20 74 2.0…4.0 TO-220КП753АКП753Б КП753ВPilot ProductionIRF830 IRF831 IRF832 500 450 500 1.5 1.5 2.0 4.5 4.5 4.0 ±20 74 2.0…4.0 TO-220КП771А STP40N10100 0.04 40 ±20150 2.0…4.0 TO-220 КП776А КП776Б КП776В КП776Г Pilot ProductionIRF740 IRF741 IRF742 IRF744400 350 400 4500.55 0.55 0.8 0.6310.0 10.0 8.3 8.8±20 125 2.0…4.0 TO-220DISCRETE SEMICONDUCTORTransistors75• Power N-Channel MOSFETs (continued)Part Pin to Pin Compatibility Vds max, VRds (on),Ohm Id max, A Vgs max,V P max, W Vgs (th),VPackageКП777А КП777Б КП777ВPilot ProductionIRF840IRF841IRF842 500 450 500 0.85 0.85 1.1 8.0 8.0 7.0±20 125 2.0…4.0 TO-220КП778А IRFP250 200 0.085 30.0 ±20190 2.0…4.0 TO-220КП779А Pilot ProductionIRFP450 500 0.4 14.0 ±20190 2.0…4.0 TO-220 КП780АКП780Б КП780В IRF820 IRF821IRF822500 450 500 3.0 3.0 4.0 2.5 2.5 2.2 ±20 50 2.0…4.0 TO-220 КП781АPilot ProductionIRFP350 400 0.3 16.0 ±20 190 2.0…4.0 TO-220 КП783АPilot Production IRF3205 55 0.008 70.0 ±20200 2.0…4.0 TO-220 КП786А Pilot ProductionBUZ80A 800 3.0 4.0 ±20100 2.0…4.0 TO-220 КП787А Pilot Production BUZ91A 600 0.9 8.0 ±20150 2.0…4.0 TO-220 КП789А Pilot ProductionBUZ111S 320 0.008 80.0 ±20250 2.1…4.0 TO-220• Power P-Channel MOSFETsPart Pin to Pin Compatibility Vds max, V Rds (on), Ohm Id max, A Vgs max, V P max, W Vgs (th),VPackageКП784A IRF9Z34 -60 0.14 -18.0 ±20 88 -2.0…-4.0 TO-220 КП785A IRF9540 -100 0.20 -19.0 ±20 150 -2.0…-4.0 TO-220 КП796АUnderDevelopmentIRF9634 -250 1.0 -4.3 ±20 74 -2.0…-4.0 TO-220。
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BDV65B (NPN),BDV64B (PNP)Complementary Silicon Plastic Power Darlingtons...for use as output devices in complementary general purpose amplifier applications.Features•High DC Current Gain − HFE = 1000 (min) @ 5 Adc•Monolithic Construction with Built −in Base Emitter Shunt Resistors •These are Pb −Free Devices*MAXIMUM RATINGSRatingSymbol Max Unit Collector −Emitter Voltage V CEO 100Vdc Collector −Base Voltage V CB 100Vdc Emitter −Base Voltage V EB 5.0Vdc Collector Current − Continuous − PeakIC 1020Adc Base CurrentI B 0.5Adc Total Device Dissipation @ T C = 25°C Derate above 25°CPD 1251.0W W/°C Operating and Storage Junction Temperature RangeT J , Tstg-65 to + 150°CTHERMAL CHARACTERISTICSCharacteristicSymbol Max Unit Thermal Resistance, Junction −to −CaseR q JC1.0°C/WStresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.*For additional information on our Pb −Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.SOT −93(TO −218)CASE 340D10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60−80−100−120 VOLTS,125 WATTS11NPN PNPBDV65B BDV64BTO −247CASE 340L STYLE 3NOTE:Effective June 2012 this device willbe available only in the TO −247package. Reference FPCN# 16827.See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.ORDERING INFORMATIONMARKING DIAGRAMSBDV6xB AYWWG1 BASE2 COLLECTOR3 EMITTERAYWWG BDV6xBBDV6xB =Device Code x = 4 or 5A =Assembly Location Y =YearWW =Work WeekG=Pb −Free Package1 BASE2 COLLECTOR3 EMITTERTO −247TO −218ORDERING INFORMATIONDevice Order NumberPackage Type Shipping BDV65BG TO −218(Pb −Free)30 Units / Rail BDV64BG TO −218(Pb −Free)30 Units / Rail BDV65BG TO −247(Pb −Free)30 Units / Rail BDV64BGTO −247(Pb −Free)30 Units / Rail1.00.8002550100125150Figure 1. Power DeratingT C , CASE TEMPERATURE (°C)D E R A T I N G F A C T O R750.40.60.2ELECTRICAL CHARACTERISTICSCharacteristic Symbol Min Max Unit OFF CHARACTERISTICSV CEO(sus)100−Vdc Collector−Emitter Sustaining Voltage (1)(I C = 30 mAdc, I B = 0)I CEO− 1.0mAdc Collector Cutoff Current(V CE = 50 Vdc, I B = 0)Collector Cutoff CurrentI CBO−0.4mAdc(V CB = 100 Vdc, I E = 0)I CBO− 2.0mAdc Collector Cutoff Current(V CB = 50 Vdc, I E = 0, T C = 150°C)Emitter Cutoff CurrentI EBO− 5.0mAdc(V BE = 5.0 Vdc, I C = 0)ON CHARACTERISTICSh FE1000−−DC Current Gain(I C = 5.0 Adc, V CE = 4.0 Vdc)Collector−Emitter Saturation VoltageV CE(sat)− 2.0Vdc(I C = 5.0 Adc, I B = 0.02 Adc)Base−Emitter Saturation VoltageV BE(on)− 2.5Vdc(I C = 5.0 Adc, V CE = 4.0 Vdc)Figure 2. DC Current GainI C , COLLECTOR CURRENT (A)h F E , D C C U R R E N T G A I NNPNPNPI C , COLLECTOR CURRENT (A)0.11h F E , D C C U R R E N T G A I N10Figure 3. DC Current Gain10K1K110I C , COLLECTOR CURRENT (A)0.1V , V O L T A G E (V )Figure 4. “On” Voltages 1I C , COLLECTOR CURRENT (A)V , V O L T A G E (V )Figure 5. “On” VoltagesFigure 6. Active Region Safe Operating AreaV CE , COLLECTOR-EMITTER VOLTAGE (V)I C , C O L L E C T O R C U R R E N T (A )There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I C − V CE limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than the curves indicate.The data of Figure 6 is based on T J(pk) = 150°C, T C is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk)v 150°C. T J(pk) may be calculated from the data in Figure 7. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.Figure 7. Thermal Responset, TIME (ms)1.00.010.50.20.10.050.03r (t ), T R A N S I E N T T H E R M A L R E S I S T A N C E (N O R M A L I Z E D )PACKAGE DIMENSIONSSOT −93 (TO −218)CASE 340D −02ISSUE ESTYLE 1:PIN 1.BASE2.COLLECTOR3.EMITTER4.COLLECTORNOTES:1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.2.CONTROLLING DIMENSION: MILLIMETER.DIM MIN MAX MIN MAX INCHES MILLIMETERS A ---20.35---0.801B 14.7015.200.5790.598C 4.70 4.900.1850.193D 1.10 1.300.0430.051E 1.17 1.370.0460.054G 5.40 5.550.2130.219H 2.00 3.000.0790.118J 0.500.780.0200.031K 31.00 REF 1.220 REF L ---16.20---0.638Q 4.00 4.100.1580.161S 17.8018.200.7010.717U 4.00 REF 0.157 REF V1.75 REF 0.069TO −247CASE 340L −02ISSUE F0.25 (0.010)MY QS4NOTES:1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.2.CONTROLLING DIMENSION: MILLIMETER.DIM MIN MAX MIN MAX INCHES MILLIMETERS A 20.3221.080.8008.30B 15.7516.260.6200.640C 4.70 5.300.1850.209D 1.00 1.400.0400.055E 1.90 2.600.0750.102F 1.65 2.130.0650.084G 5.45 BSC 0.215 BSC H 1.50 2.490.0590.098J 0.400.800.0160.031K 19.8120.830.7800.820L 5.40 6.200.2120.244N 4.32 5.490.1700.216P --- 4.50---0.177Q 3.55 3.650.1400.144U 6.15 BSC 0.242 BSC W 2.87 3.120.1130.123STYLE 3:PIN 1.BASE2.COLLECTOR3.EMITTER4.COLLECTORON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.PUBLICATION ORDERING INFORMATION分销商库存信息:ONSEMIBDV65BG BDV64BG BDV64B BDV65B。