JANTXV2N6796U中文资料

— 45
1.8 — 4.3 —
nH
Measured from drainpadto Modified MOSFET symbol show-
die.
ing the internal inductances.
Measured from center of source pad to the end of source bonding wire.
Product Summary
Part Number
BVDSS
IRFE130
100V
RDS(on) 0.18Ω
Features:
n Hermetically Sealed n Simple Drive Requirements n Ease of Paralleling n Small footprint n Surface Mount n Lightweight
HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits, and virtually any application where high reliability is required.
IRFE130, JANTX-, JANTXV-, 2N6796U Units
8.0
5.0
A
32
25
W
0.17
W/K
±20
V
134
mJ
8.3
V/ns
-55 to 150
oC
300 ( for 5 seconds)
0.42 (typical)
g
11/13/97
IRFE130, JANTX-, JANTXV-, 2N6796U Device Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
RthJPCB Junction-to-PC Board
Min Typ Max Units
— — 5.0 K/W
— — 19
Test Conditions Soldered to a copper clad PC board
Details of notes through are on the last page
100Volt, 0.18Ω, HEXFET The leadless chip carrier (LCC) package represents the logical next step in the continual evolution of surface mount technology. The LCC provides designers the extra flexibility they need to increase circuit board density. International Rectifier has engineered the LCC package to meet the specific needs of the power market by increasing the size of the bottom source pad, thereby enhancing the thermal and electrical performance. The lid of the package is grounded to the source to reduce RF interference.
Internal Source Inductance
Min 100 —
— — 2.0 3.0 — —
— — — — — — — — — —
—
Typ Max Units —— V 0.11 — V/°C
Test Conditions VGS =0 V, ID = 1.0mA Reference to 25°C, ID = 1.0mA
Parameter
Min Typ Max Units
Test Conditions
IS Continuous Source Current (Body Diode) ISM Pulse Source Current (Body Diode)
— — 8.0 — — 32
A Modified MOSFET symbol showing the integral reverse p-n junction rectifier.
— — 970 nC
VDD ≤ 50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
Junction-to-Case
TJ = 25° C TJ = 150° C
10
1
0.1 4
V DS = 50V 20µs PULSE WIDTH
5
6
7
8
9
10
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
RDS(on) , Drain-to-Source On Resistance (Normalized)
VGS = 0V, TJ = 125°C
— 100 — -100 nA — 29
VGS = 20 V VGS = -20V VGS = 10V, ID = 8.0A
— 6.5 nC — 17
VDS = Max Rating x 0.5
— 30 — 75 — 40 ns
VDD = 50V, ID = 8.0A, RG = 7.5Ω
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BVDSS/∆TJ Temperature Coefficient of Breakdown Voltage
RDS(on)
Static Drain-to-Source On-State Resistance
1
4.5V
0.1 0.1
20µs PULSE WIDTH TJ = 150 °C
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
ID , Drain-to-Source Current (A)
100
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
I D, Drain-to-Source Current (A)
100 10
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
ID , Drain-to-Source Current (A)
IRFE130, JANTX-, JANTXV-, 2N6796U Device
100 10
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1
4.5V
0.1 0.1
20µs PULSE WIDTH TJ = 25 °C
VGS(th) gfs IDSS
Gate Threshold Voltage Forward Transconductance Zero Gate Voltage Drain Current
IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD
LS
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance
VSD trr QRR
ton
Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Forward Turn-On Time
— — 1.5 V Tj = 25°C, IS = 8.0A, VGS = 0V
— — 300 ns Tj = 25°C, IF = 8.0A, di/dt ≤ 100A/µs
— 0.18 — 0.207 Ω