薄膜技术英文课件：1introduction
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膜技术介绍-中英对照版
Wuhan Kaidi Water Technology Co., Ltd.
一．超滤膜过滤原理 I. Working Principle of Ultrafiltration Membrane
超滤膜技术是一种压力驱动下的膜孔分离技术； 超滤膜技术是一种压力驱动下的膜孔分离技术； Ultrafiltration is a membrane pore separation technology driven by pressure; 根据膜孔径大小不同，可有效截留水中的悬浮物颗粒、胶体、 根据膜孔径大小不同，可有效截留水中的悬浮物颗粒、胶体、有机大 分子、细菌、微生物等； 分子、细菌、微生物等； Based on different membrane pore diameters, it can effectively intercept suspended particles, colloids, organic macro molecules, bacteria and microbes, etc. 对胶体的去除率≥90%； 对胶体的去除率 ； The removal rate of colloids ≥90%; 结合微絮凝技术，对有机物的去除效果也较为明显。 结合微絮凝技术，对有机物的去除效果也较为明显。 Combined with micro flocculation technology, it effectively removes organic substances.
Wuhan Kaidi Water Technology Co., Ltd.
过滤 / 分离范围 Range of Filtration / Separation
Colloids 胶体 Bacteria 细菌 Pollens 花粉 200 100 10 Yeasts 酵母 1 0.1 Viruses 病毒
6. Metal Etch Introduction
(Al2O3) 加入BCl3 的主要目的有二: 1. BCl3與O2 及水分的反應性很好,所以加入BCl3將可減少Cl2電漿內的 O2與H2O的含量; 2. BCl3在電漿內可形成BClX原子團及BCl3+正離子,其中BCl3+是產生離 子轟擊的重要離子來源之一.
P.7 P.7
Metal etch concept(4) 金屬的蝕刻金屬的蝕刻- - Difference mask material
P.6 P.6
Metal etch concept(3) 金屬的蝕刻(氣體 氣體) 金屬的蝕刻- - Gas (氣體) - - Cl2/BCl3
Cl2 - Plasma - - >Cl +Cl ---Al (s) +3Cl (g) AlCl3 (g)
- - - - -反應式 - - - - -反應式
(a) CVD 鎢的沉積 (b) 鎢的乾式回蝕 (c) 鎢的回蝕過度 (d) TiN 層的過度回蝕
P.11 P.11
WF6 的沸點為17.1 oC, 因此可使用氟化物氣體來進行鎢回蝕步驟
SF6 → F ⋅ + SFx ( g )
W( s ) + 6 F ⋅ → WF6 ( g )
Vapor Pressure of Metal Fluorides and Chlorides
Al°BCl3 or Cl2 Al° 2(AlCl3• 6H2O)
AlCl3 ( Lewis acid) ---- etching mechanism Al(OH)3 + 3 HCl ------------(1) ------------(1) Al2O3 + 9 H2O + 6HCl ------------(2) 6HCl ------------(2) AlCl3 + H2 --------------------------(3) --------------------------(3)
薄膜技术英文PPT课件-07 Thin film stress and adhesion
Active film obtain compressed stress by oxidation
– O into Ti film Tensile stress obtained by molecular leave the
film – NH3 out of the Si3N4 film
Factor of growth stress--microstructure
Thermal stress
f
TE f 1 f
EAl
ETiN
Classification of film stress Tensile stress（+） Compressed stress（-）
Thermal stress Growth stress
Growth stress(intrinsic stress): stress distributions present in films following growth on substrates or on adjacent layers.
Thin film stress:the force per unit area on the cross-section of thin film usually the stress is the average value on the cross-section.
Stress Measurement of thin film
Total stress = growth stress + thermal stress
Factor of growth stress
➢ Chemical element ➢ microstructure ➢ Energetic bombardment
– O into Ti film Tensile stress obtained by molecular leave the
film – NH3 out of the Si3N4 film
Factor of growth stress--microstructure
Thermal stress
f
TE f 1 f
EAl
ETiN
Classification of film stress Tensile stress（+） Compressed stress（-）
Thermal stress Growth stress
Growth stress(intrinsic stress): stress distributions present in films following growth on substrates or on adjacent layers.
Thin film stress:the force per unit area on the cross-section of thin film usually the stress is the average value on the cross-section.
Stress Measurement of thin film
Total stress = growth stress + thermal stress
Factor of growth stress
➢ Chemical element ➢ microstructure ➢ Energetic bombardment
薄膜技术英文课件：04Thin-Film sputtering processes
– other particles (secondary electrons, desorbed gases, and negative ions) as well as radiation (Xrays and photons) are emitted from the target.
– The electric field accelerates electrons and negatively charged ions toward the anode substrate where they impinge on the growing film.
Technology of Thin Film
Thin-Film Sputtering Processes
Outline
1. Introduction 2. Plasmas, Discharges, and Arcs 3. Physics of sputtering
2
Introduction
• Evaporation and sputtering are quite different
✓Thermal plasma：highly ionized plasma, with high temperature of ion and high temperature of electron. （eg： Sun）
Production of Plasma
• Gas discharge：gas ionize in electric field by collision between energic electron and gas molecular.
Schematics of simplified sputtering systems: (a) DC, (b) RF.
– The electric field accelerates electrons and negatively charged ions toward the anode substrate where they impinge on the growing film.
Technology of Thin Film
Thin-Film Sputtering Processes
Outline
1. Introduction 2. Plasmas, Discharges, and Arcs 3. Physics of sputtering
2
Introduction
• Evaporation and sputtering are quite different
✓Thermal plasma：highly ionized plasma, with high temperature of ion and high temperature of electron. （eg： Sun）
Production of Plasma
• Gas discharge：gas ionize in electric field by collision between energic electron and gas molecular.
Schematics of simplified sputtering systems: (a) DC, (b) RF.
薄膜技术英文PPT课件-05Thin-Film CVD
G
RT
ln
rCc rAa rBb
ri
ai ai
ΔG>0，react in reverse-direction
ΔG<0；react in forward-direction Judge feasibility or direction of reaction
e.g.
Obtain the O2 partial pressure
e.g. GaAsepitaxical film by MOCVD：
e.g.硬质涂层的化学气相沉积
Disproportionation
• Disproportionation reactions are possible when a nonvolatile metal can form volatile compounds having different degrees of stability depending on the temperature.
5. Heterogeneous reactions catalyzed by the surface leading to film formation
6. Desorption of the volatile by-products of surface reactions
7. Convective and diffusive transport of the reaction by-products away from the reaction zone
Technology of Thin Film
Chemical Vapor Deposition
Xuhai Zhang
School of Material Science and Engineering Southeast University
薄膜技术02Vacuum Science and Technology
Gas impingement Flux Application: Contamination of substrate
Time for complete monolayercoverage of a surface
N N 2MRT
NAp
• In air at atmospheric pressure and ambient
Where can we find the vacuum?
1.2 Unit of vacuum
• International System of Units ：Pascals 1 atm=101.325 kPa • traditional unit of pressure: Torr 1Torr＝133.3224Pa
<1×10−10
1×10−4 to < 3×10-15
Atmosphere 1 1 to 0.03
1.3 Vacuum >102Pa
Medium vacuum 102 ~10-1Pa
High vacuum 10-1~10-5Pa
Vacuum evapration
2. Kinetic Theory of Gases
Maxwell-Boltzmann distribution
f (v)
4
(M
)
3 2
v
2
e
Mv2 2 RT
2RT
M--molecular weight T--absolute temperature R--gas constant
Velocity distributions for Al vapor and H2 gas.
second • So gases mix together rather slowly even
薄膜技术英文PPT课件-04Thin-Film sputtering processes
• Self-sustaining of plasma: the new produced ions equal the ions that lost.
Production and maintenance of Plasma
靶
基片
Glow discharge plasma
a plasma formed by the passage of electric current through a low-pressure gas. It is created by applying a voltage between two metal electrodes in a glass tube containing gas. 。
Technology of Thin Film
Thin-Film Sputtering Processes
Xuhai Zhang
School of Material Science and Engineering Southeast University
Outline
1. Introduction 2. Plasmas, Discharges, and Arcs 3. Physics of sputtering
Arcs have been defined as gas or vapor discharges where the cathode voltage drop is of the order of the minimum ionizing or excitation potential.
Furthermore, the arc is a self-sustained discharge that supports high currents by providing its own mechanism for electron emission from negative or positive electrodes.
Production and maintenance of Plasma
靶
基片
Glow discharge plasma
a plasma formed by the passage of electric current through a low-pressure gas. It is created by applying a voltage between two metal electrodes in a glass tube containing gas. 。
Technology of Thin Film
Thin-Film Sputtering Processes
Xuhai Zhang
School of Material Science and Engineering Southeast University
Outline
1. Introduction 2. Plasmas, Discharges, and Arcs 3. Physics of sputtering
Arcs have been defined as gas or vapor discharges where the cathode voltage drop is of the order of the minimum ionizing or excitation potential.
Furthermore, the arc is a self-sustained discharge that supports high currents by providing its own mechanism for electron emission from negative or positive electrodes.
Film Information
断裂伸长率（MD/TD）
%
GB/T 1040.3
all
√
Elongation at Break
弹性模量（MD/TD）
Mpa
GB/T 1040.3
all
√
Modulus of Elasticity
热收缩率 hot-shrinkage rat
%
GB/T 10003
all
√
表面张力
Dyne/cm GB/T 14216
all
√
%
GB/T 2410
clear
√
透明度Transparence
GB/T 2410
clear
光泽度 Gloss（60°）
%
all
√
白度 Whiteness
white
√
C.O.F
GB/T 10006
(Static/Dynamic)
拉伸强度（MD/TD）
Mpa
GB/T 1040.3
all
√
Tensile Strength
熔融指数
➢ 熔融指数对应分子量（成反 比），体现熔体流动性
➢ 均聚2~4g/10min ➢ 共聚4~7g/10min（乙烯含量
3~5%） ➢ 分子量大，拉伸强度大，机械
性能好，结晶度降低； ➢ 分子量分布窄，拉伸强度大，
加工困难 ➢ PP数均分子量8500
6
Define
• 薄膜是聚合物的一种二维形 式，其特征是表面积与体积比 很大。
Cast(CPP, CPE) Blowing(IPP, IPE)
Biaxially Oriented (BOPP, BOPET, BOPA)
10
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Density Melting point Crystalline size
Bolck ≤ ≤
small（um )
Thin film Large(mm)
14
2. Thin film vs. block material-1
Density Melting point Crystalline size
➢ Stoichiometric ratio
– Non-stoichiometry is common in thin film
• SiO2
SiOx
• Transparent conductive film
– Tin indium oxide (InSnyOx) condConductivecond
Thin film: thickness less than 1 micrometer
Coating: thickness lagrer than1 micrometer
12
Difference between thin film and block material
13
Thin film vs. block material
thin film for semiconductive dives and integrated circuit（集成电路）
• Al、 polysilicon、SiO2
small（um )
Large(mm)
20
2. Thin film vs. block material-1
Density Melting point Crystalline size
Bolck
Thin film
ρb≤ρtf（有问题）
Mb≤Mtf
small（um )
Large(mm)
21
2. Thin film vs. block material -2
24
25
Gold-decorated Technology 鎏 金
• The process of “liujing”
– Making AuHg alloy (煞金) – Brushing Au compound (抹金) – Evaprating Hg (开金) – Making Au denser（密集的） (压光)
2
What is the “thin film”
3
4
5
6
7
8
9
10
11
What is the thin film？
a very thin layer of a substance on a supporting material; especially : a coating (as of a semiconductor) that is deposited in a layer one atom or one molecule thick
Technology of Thin Film:
Introduction
Outline
1. Concept of thin film 2. Difference between thin film and block material 3. History of thin film and coatingd 4. Modern technology for thin film deposition 5. The content of this course
small（um )
Large(mm)
18
Melting point (℃)
Thickness (Ᾱ)
19
2. Thin film vs. block material
Density Melting point Crystalline size
Bolck
Thin film
ρb≤ρtf（有问题）
Mb≤Mtf
29
Application in Modern Time
Electronic thin film Optical thin film Magnetic thin film Mechanical functional thin film
30
• Electronic thin film
– Conductive thin film and dielectric（介电）
26
Bronze（青铜） Mirror Polishing
27
Bronze Mirror Polishing
• There is Sn rich transparent layer with several hundred nanometer thickness on the surface of mirror.
• Dense SnO2 films with
microcrystallines
are
ห้องสมุดไป่ตู้
detected on the top of the Sn
Bronze mirror from easten han dynasty rich layer.
28
Glazing 上 釉
Glazing for ceramic • beautiful • clean
Bolck ≤ ≤
small（um )
Thin film Large(mm)
15
Density g/cm3
Temprature of substrate
16
Thin film vs. block material
Density Melting point Crystalline size
Bolck
Thin film
ρb≤ρtf（有问题）
Mb≤Mtf
small（um )
Large(mm)
17
2. Thin film vs. block material-1
Density Melting point Crystalline size
Bolck
Thin film
ρb≤ρtf（有问题）
Mb≤Mtf
Conductivity
22
Comparing to bulk materials, thin film materials have some unique properties
23
3. The History of Thin Film or Coating
Application in ancient time Application in morden time