MUR1560

File Number2778.4 MUR1540, MUR1560, RURP1540, RURP156015A, 400V - 600V Ultrafast DiodesThe MUR1540, MUR1560, RURP1540, and RURP1560 are ultrafast diodes (t rr<55ns) with soft recovery characteristics. They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction.These devices are intended for use as energysteering/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and ultrafast recovery with soft recovery characteristics minimizes ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistor.Formerly developmental type T A09905.Symbol Features•Ultrafast with Soft Recovery. . . . . . . . . . . . . . . . . .<55ns •Operating T emperature. . . . . . . . . . . . . . . . . . . . . . .175o C •Reverse Voltage Up to . . . . . . . . . . . . . . . . . . . . . . . .600V •Avalanche Energy Rated•Planar ConstructionApplications•Switching Power Supply•Power Switching Circuits•General PurposePackagingJEDEC TO-220ACOrdering InformationPART NUMBER PACKAGE BRANDMUR1540TO-220ACMUR1540RURP1540TO-220AC RURP1540 MUR1560TO-220AC MUR1560 RURP1560TO-220AC RURP1560 NOTE:When ordering, use the entire part numberKA CATHODE(FLANGE)CATHODEANODEAbsolute Maximum Ratings T C = 25o C, Unless Otherwise SpecifiedMUR1540 RURP1540MUR1560RURP1560UNITSPeak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V RRM400600V Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V RWM400600V DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V R400600V Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I F(AV)(T C = 145o C)1515ARepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I FRM(Square Wave 20kHz)3030ANonrepetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I FSM(Halfwave 1 Phase 60Hz)200200A Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P D100100W Avalanche Energy (See Figures 7 and 8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E AVL2020mJ Operating and Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T STG, T J-55to 175-55to 175o CData Sheet January 2000Electrical SpecificationsT C = 25o C, Unless Otherwise SpecifiedSYMBOLTEST CONDITIONMUR1540, RURP1540MUR1560, RURP1560UNITS MIN TYP MAX MIN TYP MAX V FI F = 15A-- 1.25-- 1.5V I F = 15A, T C = 150o C-- 1.12-- 1.2V I RV R = 400V --100---µA V R = 600V-----100µA V R = 400V, T C = 150o C --500---µA V R = 600V, T C = 150o C-----500µA t rrI F = 1A, dI F /dt = 100A/µs --55--55ns I F = 15A, dI F /dt = 100A/µs--60--60ns t a I F = 15A, dI F /dt = 100A/µs -30--30-ns t b I F = 15A, dI F /dt = 100A/µs-17--20-nsR θJC-- 1.5-- 1.5o C/WDEFINITIONSV F = Instantaneous forward voltage (pw = 300µs, D = 2%).I R = Instantaneous reverse current.t rr = Reverse recovery time at dI F /dt = 100A/µs (See Figure 6), summation of t a + t b .t a = Time to reach peak reverse current at dI F /dt = 100A/µs (See Figure 6).t b = Time from peak I RM to projected zero crossing of I RM based on a straight line from peak I RM through 25% of I RM (See Figure 6).R θJC = Thermal resistance junction to case.pw = pulse width.D = duty cycle.Typical Performance CurvesFIGURE 1.FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2.REVERSE CURRENT vs REVERSE VOLTAGE801010I F , F O R W A R D C U R R E N T (A )V F , FORWARD VOLTAGE (V)0.51.01.52.0175o C100o C 25o C500100101.00.010.0010I R , R E V E R S E C U R R E N T (µA )100200300400500V R , REVERSE VOLTAGE (V)6000.1175o C100o C25o CAll Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.Intersil semiconductor products are sold by description only.Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-out notice.Accordingly,the reader is cautioned to verify that data sheets are current before placing rmation furnished by Intersil is believed to be accurate and reliable.However,no responsibility is assumed by Intersil or its subsidiaries for its use;nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.For information regarding Intersil Corporation and its products,see web site FIGURE 3.t rr ,t a AND t b CURVES vs FORWARD CURRENTFIGURE 4.CURRENT DERATING CURVETypical Performance Curves(Continued)60504030201001t , T I M E (n s )I F , FORWARD CURRENT (A)t rrt at b102016141210420120130140150160170180T C , CASE TEMPERATURE (o C)I F (A V ), A V E R A G E F O R W A R D C U R R E N T (A )86SQ. WAVEDCTest Circuits and WaveformsFIGURE 5.t rr TEST CIRCUITFIGURE 6.t rr WAVEFORMS AND DEFINITIONSFIGURE 7.AVALANCHE ENERGY TEST CIRCUITFIGURE 8.AVALANCHE CURRENT AND VOLTAGEWAVEFORMSR GLV DDIGBTCURRENT SENSEDUTV GEt 1t 2V GE AMPLITUDE AND t 1 AND t 2CONTROL I FR G CONTROL dI F /dt +-dtdI F I F t rrt at bI RM0.25 I RM DUTCURRENT SENSE+LRV DDR < 0.1ΩE AVL = 1/2LI 2 [V R(AVL)/(V R(AVL) - V DD )]Q 1= IGBT (BV CES > DUT V R(AVL))-V DDQ 1I = 1A L = 40mH I Vt 0t 1t 2I LV AVLtI L。