Measurement of SMA Drive Characteristics

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NI-7935 SPECIFICATIONS说明书

SPECIFICA TIONSNI-7935RController for FlexRIO™This document lists the specifications for the NI-7935R. Specifications are subject to change without notice. For the most recent device specifications, refer to /manuals. Refer to your adapter module documentation for the adapter module specifications.Note Using the NI-7935R in a manner not described in this document might impairthe protection the NI-7935R provides.Note Typical values are representative of an average unit operating at roomtemperature. These specifications are typical at 25 °C unless otherwise noted. ContentsFlexRIO Documentation (2)Processor (3)CMOS Battery (4)Internal Reference Clock (4)General Characteristics (4)Typical Specifications (4)Network/Ethernet Port (5)USB Ports (5)SD Card Slot (5)REF IN (5)TRIG General Characteristics (6)High Speed Serial Ports (6)Non-volatile Storage (7)Reconfigurable FPGA (7)FPGA Digital Input/Output (8)FPGA-Accessible DRAM (8)Power Requirements (8)Physical (9)Safety V oltages (9)Maximum Working V oltage at the FlexRIO Adapter Module Connector (10)Environment (10)Operating Environment (10)Storage Environment (11)Shock and Vibration (11)Compliance and Certifications (11)Safety (11)Electromagnetic Compatibility (11)CE Compliance (12)Online Product Certification (12)Environmental Management (12)Worldwide Support and Services (13)FlexRIO Documentation2| | NI-7935R SpecificationsProcessorType Xilinx Zynq-7020, XC7Z020 AllProgrammable SoC, CLG484 Architecture ARM Cortex-A9Speed667 MHzCores2Real-time clock accuracy 5 ppmOperating system NI Linux Real-Time (32-bit)NI-7935R Specifications| © National Instruments| 3Nonvolatile memory512 MB1, SLC NAND FlashV olatile memory (DRAM)512 MB, DDR3Flash reboot endurance100,000 cycles2For information about the life span of the nonvolatile memory and about best practices for using nonvolatile memory, visit /info and enter the Info Code SSDBP.CMOS Battery10 yearsTypical battery life with power applied topower connectorTypical battery life in storage up to 70 °C10 yearsInternal Reference ClockGeneral CharacteristicsClock distribution part number AD95113; clock distributionOscillator type VCXOOscillator model Epson Toyocom TCO–2121U2 Frequency100 MHz4Frequency pull range± 100 ppmT ypical SpecificationsFrequency stabilityTemperature±30 ppm over the operating temperature range Aging±5 ppm per year1Formatted capacity of nonvolatile memory may be slightly less than this value.2You can increase the flash reboot endurance value by performing field maintenance on the device.If you expect that your application may exceed the maximum cycle count listed in this document, contact NI support for information about how to increase the reboot endurance value.3For additional information about the AD9511, refer to the Analog Devices data sheet at.4Onboard PLL circuitry divides the 100 MHz onboard oscillator to 10 MHz for use by adaptermodules.4| | NI-7935R SpecificationsNetwork/Ethernet PortNumber of ports1Network interface10Base-T, 100Base-TX, and 1000Base-TEthernetCompatibility IEEE 802.3Communication rates10 Mbps, 100 Mbps, 1000 Mbps auto-negotiated, half/full-duplexMaximum cabling distance100 m/segmentUSB PortsNumber of portsUSB device port 1 standard micro-B connectorUSB host port 1 standard A connectorUSB interface USB 2.0, Hi-SpeedMaximum data rate480 Mb/s per portMaximum current (USB Host Port) 1 ASD Card SlotForm factor MicroSDSD card support SD and SDHC standardsNon-volatile memory5Up to 32 GB6REF INNumber of channels1, single-endedConnector type SMAFrequency10 MHzInput impedance50 ΩInput coupling AC5For information about the life span of the nonvolatile memory and about best practices for using nonvolatile memory, visit /info and enter the Info Code SSDBP.6 1 GB is equal to 1 billion bytes; formatted capacity might be less.NI-7935R Specifications| © National Instruments| 5Input voltage range0.75 V pk-pk to 5.2 V pk-pk Absolute maximum voltage±8.0 VDC, 8.0 V pk-pk ACDuty cycle40% to 60%TRIG General CharacteristicsNumber of channels1, single-endedConnector type SMACoupling DCImpedanceInput10 kΩOutput50 ΩLogic level 3.3V CMOSV oltageV IH_MIN 2 VV IL_MAX0.8 VV OH_MIN (unloaded) 3.1 VV OL_MAX (unloaded)0.2 VAbsolute maximum voltage±20 VDC, +21 dBm (7.1 V pk-pk) CurrentI OH_MAX12 mAI OL_MAX-12 mAHigh Speed Serial PortsData rate10.3125 Gbps, 6.25 Gbps, 3.125 Gbps Connector type SFP+Number of TX channels2Number of RX channels26| | NI-7935R SpecificationsSupported high speed cable type7Electrical/opticalOptical cable power 3.3 V ± 5%, 500 mA per port, characteristic Note For detailed FPGA and high speed serial port specifications, refer to Xilinxdocumentation.Non-volatile StorageFor information about the life span of the nonvolatile memory and about best practices for using nonvolatile memory, visit /info and enter the Info Code SSDBP.Non-volatile memorySD removable (user supplied)Up to 32 GB8System memory512 MBReconfigurable FPGAFPGA Kintex-7 XC7K410TLUTs254,200DSP48 Slices (25 × 18 multiplier)1,540Embedded Block RAM (kbits)28,620Default timebase40 MHzTimebase accuracy±100 ppm, 250 ps peak-to-peak jitterData transfers DMA, interrupts, programmed I/O Number of DMA channels16For detailed FPGA specifications, refer to Xilinx documentation.7Use only copper cable cables less than or equal to 3 m. Using copper cables with lengths greater than 3 m invalidates these specifications. If you use cables with a length greater than 3 m, useoptical cables.8 1 GB is equal to 1 billion bytes; formatted capacity might be less.NI-7935R Specifications| © National Instruments| 7FPGA Digital Input/OutputNumber of general-purpose channels136, configurable as 136 single-ended, 68differential, or a combination of both9 Channels per bankBank 0/Bank 148Bank 240Compatibility Configured through the FPGA and based onthe attached adapter module; 1.2 V, 1.5 V,1.8 V,2.5 V, and3.3 V I/O standards (refer to).Protection Refer to .Current Refer to .Maximum I/O data ratesSingle-ended400 Mb/sDifferential 1 Gb/s for LVDSMulti-region clock inputs6Single-region clock inputs5Connection resources SMA connector (TRIGGER and REF CLK) FPGA-Accessible DRAMMemory size 2 GBTheoretical maximum data rate10.5 GB/sPower RequirementsThe NI-7935R requires a power supply connected to the power connector.9The 136 channels span across three FPGA banks.8| | NI-7935R SpecificationsCaution You must use either the recommended power supply, or another UL listedITE power supply with the NI-7935R.Caution Exceeding the power limits may cause unpredictable behavior by theNI-7935R.V oltage input range9 V to 30 V (measured at the NI-7935R powerconnector)Maximum power consumption1060 WTypical standby power consumption11.4 WRecommended power supply>75 W, 12 VDCEMC ratings for power input as described in IEC 61000Short lines, long lines, and DC distributed networksPower input connectorPower receptacle Weidmuller OMNIMATE Signal, S2C-SMT3.50/04/90LF 1.8AU BK BX, part number1993840000Power plug Weidmuller OMNIMATE Signal, B2CF3.50/04/180F AU BK BX, part number1993830000PhysicalDimensions (not including connectors)23.4 cm × 13.1 cm × 4.4 cm (9.21 in. × 5.14 in.× 1.73 in.)Weight1,170 g (41.27 oz.)Safety VoltagesConnect only voltages that are below these limits.Positive terminal to negative terminal30 VDC maximum, Measurement Category I Measurement Category I is for measurements performed on circuits not directly connected to the electrical distribution system referred to as MAINS voltage. MAINS is a hazardous live electrical supply system that powers equipment. This category is for measurements of voltages from specially protected secondary circuits. Such voltage measurements include signal levels,10The maximum power consumption specification is based on a fully populated system running a high-stress application at elevated ambient temperature, and with all controllers, adapter modules, and peripheral devices consuming the maximum allowed power.NI-7935R Specifications| © National Instruments| 9special equipment, limited-energy parts of equipment, circuits powered by regulated low-voltage sources, and electronics.Caution Do not connect the NI-7935R to signals or use for measurements withinMeasurement Categories II, III, or IV.Note Measurement Categories CAT I and CAT O (Other) are equivalent. The inputcircuits are not intended for direct connection to the MAINs building installations ofCategories CAT II, CAT III, or CAT IV.Caution You can impair the protection provided by the NI-7935R if you use it in amanner not described in this document.Maximum Working Voltage at the FlexRIO Adapter Module ConnectorNote Maximum working voltage refers to the signal voltage plus the common-mode voltage between the NI-7935R and the adapter module.Channel-to-earth0 V to 3.3 V, Measurement Category I Channel-to-channel0 V to 3.3 V, Measurement Category ICaution Do not use this device for connecting to signals in MeasurementCategories II, III, or IV.EnvironmentMaximum altitude2,000 m (800 mbar) (at 25 °C ambienttemperature)Pollution Degree2Indoor use only.Operating EnvironmentAmbient temperature range0 °C to 55 °C (Tested in accordance withIEC 60068-2-1 and IEC 60068-2-2. MeetsMIL-PRF-28800F Class 3 low temperaturelimit and MIL-PRF-28800F Class 2 hightemperature limit.)Relative humidity range10% to 90%, noncondensing (Tested inaccordance with IEC 60068-2-56.)10| | NI-7935R SpecificationsStorage EnvironmentAmbient temperature range-40 °C to 71 °C (Tested in accordancewith IEC 60068-2-1 and IEC 60068-2-2. MeetsMIL-PRF-28800F Class 3 limits.) Relative humidity range5% to 95%, noncondensing (Tested inaccordance with IEC 60068-2-56.) Shock and VibrationOperating shock30 g peak, half-sine, 11 ms pulse (Tested inaccordance with IEC 60068-2-27. MeetsMIL-PRF-28800F Class 2 limits.) Random vibrationOperating 5 Hz to 500 Hz, 0.3 g rms (Tested in accordancewith IEC 60068-2-64.)Nonoperating 5 Hz to 500 Hz, 2.4 g rms (Tested in accordancewith IEC 60068-2-64. Test profile exceeds therequirements of MIL-PRF-28800F, Class 3.) Compliance and CertificationsSafetyThis product is designed to meet the requirements of the following electrical equipment safety standards for measurement, control, and laboratory use:•IEC 61010-1, EN 61010-1•UL 61010-1, CSA 61010-1Note For UL and other safety certifications, refer to the product label or the OnlineProduct Certification section.Electromagnetic CompatibilityThis product meets the requirements of the following EMC standards for electrical equipment for measurement, control, and laboratory use:•EN 61326-1 (IEC 61326-1): Class A emissions; Basic immunity•EN 55011 (CISPR 11): Group 1, Class A emissions•EN 55022 (CISPR 22): Class A emissions•EN 55024 (CISPR 24): Immunity•AS/NZS CISPR 11: Group 1, Class A emissionsNI-7935R Specifications| © National Instruments| 11•AS/NZS CISPR 22: Class A emissions•FCC 47 CFR Part 15B: Class A emissions•ICES-001: Class A emissionsNote In the United States (per FCC 47 CFR), Class A equipment is intended foruse in commercial, light-industrial, and heavy-industrial locations. In Europe,Canada, Australia, and New Zealand (per CISPR 11), Class A equipment is intendedfor use only in heavy-industrial locations.Note Group 1 equipment (per CISPR 11) is any industrial, scientific, or medicalequipment that does not intentionally generate radio frequency energy for thetreatment of material or inspection/analysis purposes.Note For EMC declarations, certifications, and additional information, refer to theOnline Product Certification section.CE ComplianceThis product meets the essential requirements of applicable European Directives, as follows:•2014/35/EU; Low-V oltage Directive (safety)•2014/30/EU; Electromagnetic Compatibility Directive (EMC)Online Product CertificationRefer to the product Declaration of Conformity (DoC) for additional regulatory compliance information. To obtain product certifications and the DoC for this product, visit / certification, search by model number or product line, and click the appropriate link in the Certification column.Environmental ManagementNI is committed to designing and manufacturing products in an environmentally responsible manner. NI recognizes that eliminating certain hazardous substances from our products is beneficial to the environment and to NI customers.For additional environmental information, refer to the Minimize Our Environmental Impact web page at /environment. This page contains the environmental regulations and directives with which NI complies, as well as other environmental information not included in this document.Waste Electrical and Electronic Equipment (WEEE)EU Customers At the end of the product life cycle, all NI products must bedisposed of according to local laws and regulations. For more information abouthow to recycle NI products in your region, visit /environment/weee.12| | NI-7935R Specifications电子信息产品污染控制管理办法（中国RoHS）中国客户National Instruments符合中国电子信息产品中限制使用某些有害物质指令(RoHS)。

Tektronix P7313SMA和P7380SMA差分SMA探头系列数据表说明书

Differential SMA Probe FamilyP7313SMA •P7380SMA DataSheetFeatures &Bene ﬁts>13.0GHz Bandwidth (P7313SMA only,typical)>8.0GHz Bandwidth (P7380SMA only,typical)50ΩTermination Network,Differential SMA Inputs Industry-leading Differential Return Loss and VSWR High-bandwidth Differential Ampli ﬁer with Excellent CMRRInternal Termination Voltage Generator can be Controlled Internally by the Oscilloscope*1,by an External Source,or Automatically by the Probe Phase-matched SMA Cables (38inch length,<1ps skew)with Cable Loss CompensationSwitchable Gain for Extended Dynamic RangeAuxiliary (Inverted)Output for use with Spectrum Analyzers,Network Analyzers,or as a Clock Recovery Trigger Source TekConnect™InterfaceApplicationsValidation and Compliance Testing of Serial Data Standards including,but not limited to:PCI Express I and II Serial ATA FBDIMM DDR XAUIHDMI/DVI (P7313SMA only)Tektronix continues to demonstrate its proven leadership in differential probing with a signi ﬁcant addition to our Differential SMA Probe Family.Differential SMA probes are designed for measuring differential signals in a 50Ωsignaling environment,providing the ability to convert from a differential SMA signal path to a single oscilloscope input channel.Many of today's high-speed serial data standards employ differential signaling on multiple lanes that are challenging to measure simultaneously on a single oscilloscope.The Tektronix Differential SMA Probes provide the ability to measure a high-speed differential signal on each channel of a multiple-channel oscilloscope.The right oscilloscope can simultaneously acquire up to four high-speed differential signals with the use of fourdifferential SMA probes.As an added bene ﬁt,the SMA inputs on the probes connect to high-quality 50Ωterminations that offer industry-leading return loss,a critical speci ﬁcation that is very important in compliance testing as frequencies increase.Tektronix Differential SMA Probes also provide a common mode DC voltage input to the termination network.The termination voltage can be supplied either externally by the user or internally by the oscilloscope.In addition,there is also an automatic mode that senses the common mode voltage of the input signal and automatically sets the termination voltage to match.The P7313SMA has an extended termination voltage range that makes it ideal for testing differential standards with high common mode voltages like HDMI and DVI.Taken together,the high-speed differential ampli ﬁer,superior 50Ωterminations,low return loss,ﬂexible termination voltage,and quality phase-matched SMA cables create a world-class differential acquisition system when used with Tektronix oscilloscopes.*1Not available on alloscilloscopes.1981Data SheetCharacteristicsCharacteristic P7380SMA P7313SMA Bandwidth(Typical)>8GHz>13.0GHz Rise Time(10-90%)(Guaranteed)<55ps<40psRise Time(20-80%)(Typical)<35ps<25ps Attenuation 2.5X or12.5X,user selectableDifferential Input Range0.625V p-p(2.5X)3.0V p-p(12.5X)0.800V p-p(2.5X)3.6V p-p(12.5X)Common Mode InputRange±2.5V+3.6/-2.5VTermination VoltageRange±2.5V+3.6/-2.5VNoise, Referred to Input <13nV/√Hz(2.5X) <40nV/√Hz(12.5X)Differential Return Loss<27dB to5GHz(VSWR<1.09:1)<20dB to8GHz(VSWR<1.22:1)<30dB to500MHz (VSWR<1.065:1) <20dB to6.5GHz (VSWR<1.22:1) <15dB to10GHz (VSWR<1.43:1) <12dB to13GHz (VSWR<1.67:1)CMRR>50dB to100MHz>35dB to1GHz>20dB to5GHz>15dB to8GHz>50dB to1GHz >35dB to2.5GHz >25dB to5GHz >20dB to10GHz >15dB to13GHzMax Voltage(Nondestruct)±5V(DC+peak AC) Interface TekConnect®Differential SMA Probe Family —P7313SMA •P7380SMAOrdering InformationP7313SMA >13.0GHz Differential SMA Probe for TekConnect ®Interface.P7380SMA>8.0GHz Differential SMA Probe for TekConnect ®Interface.All Include :Standard accessories (see table),Calibration Data Report (Opt.D1),Certi ﬁcate of Traceable Calibration,One-year Warranty.Standard AccessoriesDescriptionP7380SMAP7313SMAReorder Part NumberPouch,Nylon Carrying Case with Inserts 1each 1each 016-1952-xx Instruction Manual 1each —071-1392-xx User Manual –PrintedIncludes Reply Card and CD—1each 020-2720-xx English020-2737-xx Simpli ﬁed Chinese020-2738-xx JapanesePhase-matched Dual SMA Cables (38in.)1pair 1pair 174-5771-xx SMA 50ΩTerminator 3each 3each 015-1022-xx SMA Short1each 1each 015-1020-xx SMA Female to BNC Male Adapter 1each 1each 015-0572-xx Banana Plug to 0.080in.Diameter Pin Jack Cable Adapter,Red(4ft.)1each 1each 012-1674-xxBanana Plug to 0.080in.Diameter Pin Jack Cable Adapter,Black (4ft.)1each 1each 012-1675-xx 0.040in.Diameter Pin Jack to 0.08in.Diameter Pin Plug Adapter,Black 2each 2each 012-1676-xx Antistatic Wrist Strap1each1each006-3415-xxRecommended AccessoriesDescriptionP7380SMAP7313SMAPart NumberPhase Adjuster (2required)Yes Yes 015-0708-xx 8000Series TekConnect Probe Interface Yes Yes 80A03Real-time Spectrum Analyzer TekConnect Probe AdapterYes Yes RTPA2AService OptionsOptionDescriptionCA1Single Calibration or Functional Veri ﬁcation C3Calibration Service 3Years C5Calibration Service 5YearsD3Calibration Data Report 3Years (with Opt.C3)D5Calibration Data Report 5Years (with Opt.C5)R5Repair Service 5YearsLanguage OptionsOptionDescriptionL0English manual L5Japanese manualL7Simpli ﬁed Chinese manualTektronix is registered to ISO 9001and ISO 14001by SRI Quality System Registrar.Product(s)complies with IEEE Standard 488.1-1987,RS-232-C,and with Tektronix Standard Codes and Formats. 3Data Sheet Contact Tektronix:ASEAN/Australasia(65)63563900Austria0080022554835*Balkans,Israel,South Africa and other ISE Countries+41526753777Belgium0080022554835*Brazil+55(11)37597627Canada180********Central East Europe and the Baltics+41526753777Central Europe&Greece+41526753777Denmark+4580881401Finland+41526753777France0080022554835*Germany0080022554835*Hong Kong4008205835India0008006501835Italy0080022554835*Japan81(3)67143010Luxembourg+41526753777Mexico,Central/South America&Caribbean52(55)56045090Middle East,Asia,and North Africa+41526753777The Netherlands0080022554835*Norway80016098People’s Republic of China4008205835Poland+41526753777Portugal800812370Republic of Korea00180082552835Russia&CIS+7(495)7484900South Africa+41526753777Spain0080022554835*Sweden0080022554835*Switzerland0080022554835*Taiwan886(2)27229622United Kingdom&Ireland0080022554835*USA180*********European toll-free number.If not accessible,call:+41526753777Updated10February2011For Further Information.Tektronix maintains a comprehensive,constantly expandingcollection of application notes,technical briefs and other resources to help engineers workingon the cutting edge of technology.Please visit Copyright©Tektronix,Inc.All rights reserved.Tektronix products are covered by U.S.and foreign patents,issued and rmation in this publication supersedes that in all previously published material.Speciﬁcation and price change privileges reserved.TEKTRONIX and TEK are registered trademarks ofTektronix,Inc.All other trade names referenced are the service marks,trademarks,or registered trademarksof their respective companies.14Dec201151W-17350-6。

SAE J17112010

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SURFACE VEHICLE RECOMMENDED PRACTICE
J1711 JUN2010
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Superseding J1711 MAR1999
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带SMA接口的脉冲电压抑制器说明说明书

SMAJE400 W Transient voltage suppressorProduct features• Low profile SMA package • Excellent clamping capability•400 W peak pulse power capability at 10/1000 μs waveform• Typical I R less than 1 μA above 10 V•Fast response time: typically less than 1.0 ps from 0 V to V BR minimum•High temperature reflow soldering: +260 °C /40 s at terminal•Plastic package meets UL 94 V-0 flammability rating• Meets moisture sensitivity level (MSL) level 1•Terminal: Solder plated leads, solderable per J-STD-002•For surface mounted applications in order to optimize board space•UL 497B recognized.File No. : E198449 Guide QVGQ2Applications• Consumer electronics • Telecommunications • Computing and servers • Appliances• Industrial automation •Mobile and wearablesEnvironmental compliance and general specificationsSMAJE 5-0 C AFamily name V R voltage(“-” indicates decimal point) Bi-/Uni-Directional(Blank=Uni, C=Bi)Voltage toleranceOrdering part numberPIN configurationPb HALOGENHF FREE2Technical Data 11213Effective November 2020SMAJE400 W Transient voltage suppressor/electronicsParameterSymbolValueUnitStorage operating junction temperature range T STG / T J -55 to +150°C Steady state power dissipation at T L = +75 °C P M(AV) 3.3W Peak pulse power dissipation on 10/1000 μs waveformP PP 400W Maximum instantaneous forward voltage at 100 A for unidirectionalV F 5.0V Peak forward surge current, 8.3 ms single half sine wave 1I FSM 60A Typical thermal resistance junction to lead R JL 30°C/W Typical thermal resistance junction to ambientR JA120°C/WAbsolute maximum ratings(+25 °C, RH=45%-75%, unless otherwise noted)1. Measured on 8.3 ms single half sine wave or equivalent square wave for unidirectional device only, duty cycle = 4 per minute maximumPackaging information (mm)Drawing not to scale.Supplied in tape and reel packaging, 5,000 parts per 13” diameter reel (EIA-481 compliant)Mechanical parameters, pad layout- mmMillimetersInches Dimension MinimumMaximumMinimumMaximumA 2.60 3.000.1020.118B 4.15 4.650.1630.183C 1.25 1.650.0490.065D 0.95 1.520.0370.060E 4.90 5.300.1930.209F 0.0510.2030.0020.008G 0.150.310.0060.012H 2.00 2.440.0790.096J 2.000.079K 2.300.091L1.800.071Part markingDimension Millimeters InchesA0 2.79 ± 0.30.110 ± 0.012B0 5.33 ± 0.30.210 ± 0.012C 330.013.0 D0 1.55 ± 0.10.061 ± 0.004E 1.75 ± 0.20.069 ± 0.008E113.3 ± 0.30.524 ± 0.012F 5.50 ± 0.20.217 ± 0.008P0 4.00 ± 0.20.157 ± 0.008P1 4.00 ± 0.20.157 ± 0.008P2 2.00 ± 0.2 0.079 ± 0.008W 12.0 ± 0.20.472 ± 0.008W115.7 ± 2.00.618 ± 0.079Cathode band (Uni-polar only)Part marking: xxxx = Date codeyy- Refer to marking designator listed in Electrical Characteristics table3Technical Data 11213Effective November 2020SMAJE400 W Transient voltage suppressor /electronics Part number Marking V RI R @ V R V BR @ I T I TV C @ I PP I PP Uni-polarBi-polarUni Bi(V)(μA)min (V)max (V)(mA)max (V)(A)SMAJE5-0A SMAJE5-0CA HE TE 5120 6.47109.243.5SMAJE6-0A SMAJE6-0CA HG TG 6120 6.677.371010.338.8SMAJE6-5A SMAJE6-5CA HK TK 6.5807.227.981011.235.7SMAJE7-0A SMAJE7-0CA HM TM 7507.788.6101233.3SMAJE7-5A SMAJE7-5CA HP TP 7.5508.339.21112.931SMAJE8-0A SMAJE8-0CA HR TR 8208.899.83113.629.4SMAJE8-5A SMAJE8-5CA HT TT 8.5109.4410.4114.427.8SMAJE9-0A SMAJE9-0CA HV TV 951011.1115.426SMAJE10A SMAJE10CA HX TX 10211.112.311723.5SMAJE11A SMAJE11CA HZ TZ 11112.213.5118.222SMAJE12A SMAJE12CA IE UE 12113.314.7119.920.1SMAJE13A SMAJE13CA IG UG 13114.415.9121.518.6SMAJE14A SMAJE14CA IK UK 14115.617.2123.217.3SMAJE15A SMAJE15CA IM UM 15116.718.5124.416.4SMAJE16A SMAJE16CA IP UP 16117.819.712615.4SMAJE17A SMAJE17CA IR UR 17118.920.9127.614.5SMAJE18A SMAJE18CA IT UT 1812022.1129.213.7SMAJE20A SMAJE20CA IV UV 20122.224.5132.412.4SMAJE22A SMAJE22CA IX UX 22124.426.9135.511.3SMAJE24A SMAJE24CA IZ UZ 24126.729.5138.910.3SMAJE26A SMAJE26CA JE VE 26128.931.9142.19.5SMAJE28A SMAJE28CA JG VG 28131.134.4145.48.8SMAJE30A SMAJE30CA JK VK 30133.336.8148.48.3SMAJE33A SMAJE33CA JM VM 33136.740.6153.37.5SMAJE36A SMAJE36CA JP VP 3614044.2158.1 6.9SMAJE40A SMAJE40CA JR VR 40144.449.1164.5 6.2SMAJE43A SMAJE43CA JT VT 43147.852.8169.4 5.8SMAJE45A SMAJE45CA JV VV 4515055.3172.7 5.5SMAJE48A SMAJE48CA JX VX 48153.358.9177.4 5.2SMAJE51A SMAJE51CA JZ VZ 51156.762.7182.4 4.9SMAJE54A SMAJE54CA RE WE 5416066.3187.1 4.6SMAJE58A SMAJE58CA RG WG 58164.471.2193.6 4.3SMAJE60A SMAJE60CA RK WK 60166.773.7196.8 4.1SMAJE64A SMAJE64CA RM WM 64171.178.61103 3.9SMAJE70A SMAJE70CA RP WP 70177.8861113 3.6SMAJE75A SMAJE75CA RR WR 75183.392.11121 3.3SMAJE78A SMAJE78CA RT WT 78186.795.81126 3.2SMAJE85A SMAJE85CA RV WV 85194.41041137 2.9SMAJE90A SMAJE90CA RX WX 9011001111146 2.8SMAJE100A SMAJE100CA RZ WZ 10011111231162 2.5SMAJE110A SMAJE110CA SE XE 11011221351177 2.3SMAJE120A SMAJE120CA SG XG 12011331471193 2.1SMAJE130A SMAJE130CA SK XK 13011441591209 1.9SMAJE150A SMAJE150CA SM XM 15011671851243 1.7SMAJE160A SMAJE160CA SP XP 16011781971259 1.6SMAJE170A SMAJE170CA SR XR 17011892091275 1.5SMAJE180A SMAJE180CA ST XT 18012012221292 1.4SMAJE200A SMAJE200CA SX XX 20012242471324 1.3SMAJE220A SMAJE220CA ZE YE 22012462721356 1.1SMAJE250A SMAJE250CA ZG YG 250127930914051SMAJE300A SMAJE300CA ZK YK 300133537114860.8SMAJE350A SMAJE350CA ZM YM 350139143215670.7SMAJE400A SMAJE400CA ZP YP 400144749416480.6SMAJE440ASMAJE440CAZRYR440149254317130.6Electrical characteristics (+25 °C)4Technical Data 11213Effective November 2020SMAJE400 W Transient voltage suppressor/electronicsI P P M (% I R S M )t (ms)200 25 50 75 100125 150 175P P P d e r a t i n g i n p e r c e n t a g e (%)100406080T J -Initial junction temperature (°C)V- I curve characteristics (Uni-directional)V- I curve characteristics (Bi-directional)Pulse waveformPulse derating curveSurge waveform: 10/1000 μsV R : Stand-off voltage -- Maximum voltage that can be applied V BR : Breakdown voltageV C : Clamping voltage -- Peak voltage measured across the suppressor at a specified I PP I R : Reverse leakage current I T : Test currentV F : Forward voltage drop for Uni-directional TVS diode0.0010.01 0.11.0 100.11001.010400 W at 10/1000 μs +25 °CP p p (k W )t d -Pulse width (ms)Peak pulse power dissipation vs. pulse widthRatings and V-I characteristic curves (+25 °C unless otherwise noted)EatonElectronics Division 1000 Eaton Boulevard Cleveland, OH 44122United States/electronics© 2020 EatonAll Rights Reserved Printed in USAPublication No. 11213 BU-MC20191November 2020Technical Data 11213Effective November 2020SMAJE400 W Transient voltage suppressor Life Support Policy: Eaton does not authorize the use of any of its products for use in life support devices or systems without the express writtenapproval of an officer of the Company. Life support systems are devices which support or sustain life, and whose failure to perform, when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.Eaton reserves the right, without notice, to change design or construction of any products and to discontinue or limit distribution of any products. Eaton also reserves the right to change or update, without notice, any technical information contained in this bulletin.Solder reflow profileT e m p e r a t u r eT LT PEaton is a registered trademark.All other trademarks are property of their respective owners.Follow us on social media to get the latest product and support information.Reference J-STD-020Profile featureStandard SnPb solderLead (Pb) free solderPreheat and soak • Temperature min. (T smin )100 °C 150 °C • Temperature max. (T smax )150 °C 200 °C • Time (T smin to T smax ) (t s )60-120 seconds 60-180 seconds Ramp up rate T L to T p 3 °C/ second max. 3 °C/ second max.Liquidous temperature (T l ) Time (t L ) maintained above T L183 °C60-150 seconds 217 °C60-150 seconds Peak package body temperature (T P )*Table 1Table 2Time (t p )* within 5 °C of the specified classification temperature (T c )20 seconds*40 seconds*Ramp-down rate (T p to T L ) 6 °C/ second max. 6 °C/ second max.Time 25 °C to peak temperature6 minutes max.8 minutes max.* Tolerance for peak profile temperature (T p ) is defined as a supplier minimum and a user maximum.Table 1 - Standard SnPb solder (T c )Package thicknessVolume mm3 <350Volume mm3 ≥350<2.5 mm 235 °C 220 °C ≥2.5 mm220 °C220 °CTable 2 - Lead (Pb) free solder (T c )Package thicknessVolume mm 3 <350Volume mm 3350 - 2000Volume mm 3 >2000<1.6 mm 260 °C 260 °C 260 °C 1.6 – 2.5 mm 260 °C 250 °C 245 °C >2.5 mm250 °C245 °C245 °C。

美国商务部管制清单索引

ALPHABETICAL INDEXTO THE COMMERCE CONTROL LISTThis index is not an exhaustive list of controlled items.Description ECCN Citation Ablative liners, thrust or combustion chambers .................................................................. 9A106.a Abrin ................................................................................................................................. 1C351.d.1 Absettarov (Central European tick-borne encephalitis virus) ..................................... 1C360.a.1.a.1 Absolute reflectance measurement equipment .................................................................... 6B004.a Absorbers of electromagnetic waves ...................................................................................... 1C001 Absorbers, hair type ...............................................................................................1C001.a Note 1.a Absorbers, non-planar & planar ....................................................................... 1C001.a Note 1.b&c Absorption columns ............................................................................................................. 2B350.e Accelerators (electro-magnetic radiation) ............................................................................ 3A101.b Accelerators or coprocessors, graphics .............................................................................. 4A003.d Accelerometer axis align stations .............................................................................. 7B003, 7B101 Accelerometer test station .......................................................................................... 7B003, 7B101 Accelerometers & components therefor ................................................................ 7A101 Accelerometers & accelerometer components ........................................................................ 7A001 Acoustic beacons ........................................................................................................... 6A001.a.1.b Acoustic beam forming software ...................................................................................... 6D003.a.1 Acoustic hydrophone arrays, towed ............................................................................. 6A001.a.2.b Acoustic location & object detection systems ............................................................... 6A001.a.1.b Acoustic, marine, terrestrial equipment .................................................................................. 6A991 Acoustic mounts, noise reduction equipment for vessels .............................................. 8A002.o.3.a Acoustic-optic signal processing devices ......................................................................... 3A001.c.3 Acoustic positioning systems ......................................................................................... 6A001.a.1.d Acoustic projectors ........................................................................................................ 6A001.a.1.c Acoustic seabed survey equipment ................................................................................ 6A001.a.1.a Acoustic systems, diver deterrent ....................................................................................... 8A002.r Acoustic systems, marine ..................................................................................................... 6A001.a Acoustic transducers ...................................................................................................... 6A001.a.2.c Acoustic underwater communications systems ............................................................... 5A001.b.1 Acoustic vibration test equipment .......................................................................................... 9B006 Acoustic wave devices ......................................................................................................... 3A001.c Acoustic-wave device manufacturing equipment and systems .................................. 3B991.b Note Active compensating system rotor clearance control software ............................................ 9D004.d Active flight control system software .................................................................................. 7D003.e Active flight control system technology .............................................................................. 7E004.b Active magnetic bearing systems......................................................................................... 2A001.c Active acoustic systems .................................................................................................... 6A001.a.1 Export Administration Regulations Bureau of Industry and Security January 9, 2012Actively cooled mirrors .................................................................................................... 6A005.e.1 Adaptive control software .................................................................................................... 2D992.a Adaptive control software ................................................................................................. 2D002.b.2 ADCs (analog-to-digital converters).................................................................................... 3A101.a ADCs (analog-to-digital converters)................................................................................. 3A001.a.5 ADCs (analog-to-digital converters).................................................................................... 4A003.e Aero gas turbine engine/assemblies/component test software............................................. 9D004.b Aero gas turbine engines ......................................................................................................... 9A001 Aerodynamic isotope separation plant/element housings ................................................. 0B001.a.3 Aerodynamic separation process systems & components ................................................... 0B001.d Aerosol challenge testing chambers ..................................................................................... 2B352.g Aerosol generating units specially designed for fitting to the systems specified in 2B352.h.1 or h.2 ...................................................................................... 2B352.h.3 Aflatoxins .......................................................................................................................... 1C351.d.2 African horse sickness virus ........................................................................................... 1C352.a.17 African swine fever virus (animal pathogens) .................................................................. 1C352.a.1 Agitators (chemical manufacturing) .................................................................................... 2B350.b AHRS (Attitude Heading Reference Systems), source code .................................................. 7D002 Air traffic control software ............................................................................................... 6D003.h.1 Air independent power systems (for underwater use) ..........................................................8A002.j Air compressors and filtration systems designed for filling air cylinders ............................8A992.l Air Traffic Control software application programs ................................................................ 6D993 Airtight vaults ......................................................................................................................... 0A981 Airborne altimeters ................................................................................................................. 7A006 Airborne altimeters ................................................................................................................. 7A106 Airborne communication equipment ...................................................................................... 7A994 Airborne radar equipment ....................................................................................................... 6A998 Aircraft .................................................................................................................................... 7A994 Aircraft, civil ........................................................................................................................ 9A991.b Aircraft, demilitarized .......................................................................................................... 9A991.a Aircraft, n.e.s........................................................................................................................... 9A991 Aircraft, trainer ....................................................................................................................... 9A018 Aircraft breathing equipment and parts ............................................................................... 9A991.e Aircraft (military) pressurized breathing equipment ........................................................... 9A018.d Aircraft inertial navigation systems & equipment ............................................................... 7A103.a Aircraft inertial navigation systems & equipment .................................................................. 7A003 Aircraft parts and components ............................................................................................. 9A991.d Akabane virus ................................................................................................................ 1C360.b.1.a Alexandrite ........................................................................................................................... 6C005.b Alexandrite lasers........................................................................................................... 6A005.c.2.b Align & expose step & repeat equipment (wafer processing) ..........................................3B001.f.1 Alignment equipment for equipment controlled by 7A .......................................................... 7B001 Export Administration Regulations Bureau of Industry and Security January 9, 2012Description ECCN Citation Alkylphenylene ethers or thio-ethers, as lubricating fluids .............................................. 1C006.b.1 Alloy strips, magnetic .......................................................................................................... 1C003.c Alloyed materials production systems and components ......................................................... 1B002 Alloyed metal materials in powder or particulate form ....................................................... 1C002.b Alloyed metal materials in the form of uncomminuted flakes, ribbons, or thin rods .......... 1C002.c Alloys, aluminum ................................................................................................................. 1C202.a Alloys, aluminum ........................................................................................................... 1C002.a.2.d Alloys, magnesium ........................................................................................................ 1C002.a.2.e Alloys, metal powder or particulate form ............................................................................ 1C002.b Alloys, nickel ............................................................................................................... 1C002.a.2.a Alloys, niobium.............................................................................................................. 1C002.a.2.b Alloys, titanium.................................................................................................................... 1C202.b Alpha-emitting radionuclides, compounds, mixtures, products or devices ............................ 1C236 Altimeters, airborne ................................................................................................................ 7A006 Altimeters, radar or laser types ............................................................................................. 7A106 Alumina fibers ......................................................................................................... 1C010.c Note 1 Aluminides ........................................................................................................................ 1C002.a.1 Aluminides, nickel ......................................................................................................... 1C002.a.1.a Aluminides, titanium...................................................................................................... 1C002.a.1.b Aluminum alloys ............................................................................................................ 1C002.a.2.d Aluminum alloy/powder or particulate form ............................................................... 1C002.b.1.d Aluminum alloys as tubes/solid forms/forgings ................................................................. 1C202.a Aluminum electroplating equipment .................................................................................... 2B999.i Aluminum gallium nitride (AlGaN) “substrates”, i ngots, boules, or otherpreforms of those materials ................................................................................................. 3C005 Aluminum nitride (AlN) “substrates”, ingots, boules, or other preforms ofthose materials ..................................................................................................................... 3C005 Aluminum organo-metallic compounds ................................................................................. 3C003 Aluminum oxide powder, fine ................................................................................................ 0C201 Aluminum powder, spherical .......................................................................................... 1C111.a.1 Aluminum powder (spherical) production equipment ............................................................ 1B102 Amalgam electrolysis cells, lithium isotope separation .................................................. 1B233.b.3 Amalgam pumps, lithium and/or mercury ........................................................................ 1B233.b.2 Ammonia, aqueous ................................................................................................................. 1C980 Ammonia crackers ......................................................................................................... 0B004.b.2.d Ammonia distillation towers .......................................................................................... 0B004.b.4.b Ammonia synthesis converters & units .................................................................................. 1B227 Ammonia-hydrogen exchange plant ................................................................................. 0B004.a.2 Ammonia-hydrogen exchange equipment and components ........................................... 0B004.b.2 Ammonium bifluoride ............................................................. see ammonium hydrogen fluoride Ammonium hydrogen fluoride ......................................................................................... 1C350.d.1 Ammonium nitrate, including certain fertilizers containing ammonium nitrate .................... 1C997 Export Administration Regulations Bureau of Industry and Security January 9, 2012Description ECCN Citation Ammunition hand-loading equipment .................................................................................... 0B986 Amorphous alloy strips ........................................................................................................... 1C003 Amplifiers, microwave solid state .................................................................................... 3A001.b.4 Amplifiers, pulse .................................................................................................................. 3A999.d Analog instrumentation tape recorders ............................................................................. 3A002.a.1 Analog computers ................................................................................................................... 4A101 Analog-to-digital converters ................................................................................................ 3A101.a Analog-to-digital converters, integrated circuits .............................................................. 3A001.a.5 Analog-to-digital conversion equipment ............................................................................. 4A003.e Analyzers, network .............................................................................................................. 3A002.e Analyzers, spectrum .......................................................................................................... 3A002.c.1 Andes virus ....................................................................................................................... 1C351.a.1 Angular displacement measuring instruments ..................................................................... 2B206.c Angular measuring instruments ........................................................................................ 2B006.b.2 Angular measuring instruments .............................................................................................. 2B206 Angular-linear inspection equipment (hemishells) ................................................................. 2B206 Angular-linear inspection equipment (hemishells) .............................................................. 2B006.c Angular rate sensors ................................................................................................................ 7A002 Animal pathogens .................................................................................................................. 1C352 Annealing or recrystallizing equipment ...................................................................... 3B991.b.1.c.1 Antennae, for microwave power source ............................................................................ 0B001.i.3 Antennae, phased array ...................................................................................................... 5A001.d Antennae, phased array (for radar) ...................................................................................... 6A008.e Anti-vibration mounts (noise reduction), civil vessels .................................................. 8A002.o.3.a Antimony hydrides.................................................................................................................. 3C004 Aramid fibers & filamentary materials ................................................................................ 1C210.a Aramid fibers & filamentary materials ................................................................................ 1C010.a Arc remelt & casting furnaces ............................................................................................. 2B227.a Argon ion lasers ................................................................................................................... 6A205.a Argon ion lasers ................................................................................................................... 6A005.a Armor body ............................................................................................................................. 1A005 Armor plate drilling machines ............................................................................................. 2B018.a Armor plate planing machines ............................................................................................. 2B018.b Armor plate quenching presses ............................................................................................ 2B018.c Arms machinery, equipment, gear, parts, and accessories ..................................................... 2B018 Arms (small) chambering machines .................................................................................... 2B018.o Arms (small) deep hole drilling machines and drills therefor ............................................. 2B018.p Arms (small) rifling machines ............................................................................................. 2B018.q Arms (small) spill boring machines ......................................................................................2B018.r Aromatic polyimides ......................................................................................................... 1C008.a.3 Aromatic polyamide-imides .............................................................................................. 1C008.a.2 Aromatic polyetherimides ................................................................................................. 1C008.a.4 Export Administration Regulations Bureau of Industry and Security January 9, 2012Description ECCN Citation Array processor microcircuits .................................................................................. 3A001.a.3 Note Array processors/assemblies ................................................................................................. 4A004 Array processors/assemblies ................................................................................................... 4A003 Arrays of aerosol generating units or spray booms, specially designed forfitting to aircraft, “lighter than air vehicles,”or “UAVs”............................................ 2B352.h.2 Arsenic trichloride ............................................................................................................ 1C350.b.1 Arsenic hydrides ..................................................................................................................... 3C004 Asphalt paving mixtures ......................................................................................................... 1C980 Aspheric optical elements .................................................................................................... 6A004.e Assemblies to enhance performance by aggregation of computing elements ..................... 4A994.c Asynchronous transfer mode (ATM) equipment ......................................................... 5A991.c.10.d Asynchronous transfer mode (ATM), technology for the developmentof equipment employing ................................................................................................ 5E001.c.1 Atomic vapor laser isotope separation plant ..................................................................... 0B001.a.6 Atomic vapor laser isotope separation process equipment .................................................. 0B001.g Atomic frequency standards ................................................................................................ 3A002.g Atomic transition solid state lasers ...............................................................................6A005.a or b Attitude Heading Reference Systems (AHRS), source code software ................................... 7D002 Attitude control equipment for missiles .................................................................................. 7A116 Aujeszky’ disease virus (Porcine herpes virus) ................................................................ 1C352.a.6 Austenitic stainless steel plate, valves, piping, tanks and vessels ....................................... 2B999.n Autoclave temperature, pressure or atmosphere regulation technology ................................. 1E103 Autoclaves, ovens and systems ............................................................................................ 0B002.a Automated control systems, submersible vehicles .............................................................. 8A002.b Automatic drug injection systems ........................................................................................... 0A981 Automotive, diesel, and marine engine lubricating oil ........................................................... 1C980 Avian influenza virus ........................................................................................................ 1C352.a.2 Aviation engine lubricating oil ............................................................................................... 1C980 Avionic equipment, parts, and components ............................................................................ 7A994 Avionics EMP/EMI protection technology ............................................................................ 7E102 Bacillus anthracis .............................................................................................................. 1C351.c.1 Bacteria ................................................................................................................................ 1C351.c Bacteria ................................................................................................................................ 1C354.a Bacteria ................................................................................................................................ 1C352.b Baffles .................................................................................................................................. 0A001.h Baffles (rotor tube), gas centrifuge ................................................................................... 0B001.c.7 Balancing machines ............................................................................................................. 2B119.a Balancing machines ............................................................................................................. 7A104.a Balancing instrumentation ................................................................................................... 7A104.b Balancing machines, centrifugal multiplane ........................................................................... 2B229 Balancing mahcines, centrifugal multiplane ....................................................................... 2B999.m Ball bearings, precision hardened steel and tungsten carbide .............................................. 1C999.a Export Administration Regulations Bureau of Industry and Security January 9, 2012Description ECCN Citation Ball bearings, Radial ............................................................................................................... 2A101 Ball & solid roller bearings .................................................................................................. 2A001.a Band-pass filters, tunable .................................................................................................. 3A001.b.5 Barium metal vapor lasers ................................................................................................... 6A005.b Bartonella quintana ........................................................................................................... 1C351.b.1 Batch mixers .......................................................................................................................... 1B117 Bathymetric survey systems .......................................................................................... 6A001.a.1.b Batons, shock .......................................................................................................................... 0A985 Batons, spiked ......................................................................................................................... 0A983 Bay cable systems .......................................................................................................... 6A001.a.2.e Bay cable systems software ............................................................................................ 6D003.a.3 Bayonets ............................................................................................................................... 0A918.b Beam lead bonders, stored program controlled equipment ........................................... 3B991.b.3.b Beam steering mirrors ....................................................................................................... 6A004.a.4 Beamforming techniques ............................................................................................... 6A001.a.2.c Bearings, ball & solid roller ................................................................................................. 2A001.a Bearings, gas centrifuge .................................................................................................... 0B001.c.4 Bearings, gas centrifuge .................................................................................................... 0B001.c.5 Bearings, high precision/temperature/special ......................................................................... 2A001 Bearings, magnetic (active) ................................................................................................. 2A001.c Bearings, magnetic (suspension) ...................................................................................... 0B001.c.4 Bearings, precision hardened steel and tungsten carbide ..................................................... 1C999.a Bellow valves .................................................................................................................... 0B001.b.1 Bellow valves .................................................................................................................. 0B001.d.6 Bellows forming dies ........................................................................................................... 2B999.b Bellows manufacturing equipment ...................................................................................... 2B999.b Bellows or rings, gas centrifuge........................................................................................ 0B001.c.6 Bellows seal valves ............................................................................................................... 2A226 Bellows seal valves .............................................................................................................. 2B350.g Bellows sealed valves, n.e.s. ................................................................................................. 2A999 Bellows-forming mandrels................................................................................................... 2B228.c Bellows-forming dies ........................................................................................................... 2B228.c Benzilic acid...................................................................................................................... 1C350.b.2 Beryllium metal, alloys, compounds, or manufactures......................................................... 1C230 Beryllium metal particulate......................................................................................... 1C111.a.2.a.4 Beryllium/beryllium substrate blanks .................................................................................. 6C004.d Biological containment facilities, ACDP level 3 or 4 .......................................................... 2B352.a Biological isolators ............................................................................................................2B352.f.2 Biological manufacturing equipment & facilities ................................................................... 2B352 Biological safety cabinets ..................................................................................................2B352.f.2 Bismaleimides ................................................................................................................... 1C008.a.1 Bismuth ................................................................................................................................... 1C229 Export Administration Regulations Bureau of Industry and Security January 9, 2012。

测牛血清白蛋白

Multiwalled carbon nanotubes-ceramic electrode modiﬁed withsubstrate-selective imprinted polymer for ultra-trace detection of bovine serum albuminBhim Bali Prasad n ,Amrita Prasad,Mahavir Prasad TiwariAnalytical division,Department of Chemistry,Faculty of Science,Banaras Hindu University,Varanasi-221005,Indiaa r t i c l e i n f oArticle history:Received 21June 2012Received in revised form 23July 2012Accepted 25July 2012Available online 17August 2012Keywords:Molecularly imprinted polymer Porogen-waterBovine serum albuminMultiwalled carbon nanotubes-ceramic electrodeDifferential pulse voltammetrya b s t r a c tThis study describes the synthesis of a new class of substrate-selective molecularly imprinted polymer.This involved tetraethylene glycol 3-morpholin propionate acrylate (functional monomer)and bovine serum albumin (template)for polymerization in aqueous condition,using ‘‘surface grafting-from ’’approach directly on a vinyl exposed multiwalled carbon nanotubes-ceramic electrode.The analyte recapture at pH 6.8in aqueous environment simultaneously involved hydrophobically driven hydrogen bonds and ionic interactions between negatively charged bovine serum albumin and positively charged imprinted nanoﬁlm.The selectively encapsulated bovine serum albumin ﬁrst gets reduced at À0.9V and then oxidized within the cavity,without getting stripped off,to respond a differential pulse voltammetry signal.The limit of detection [0.42ng mL À1(3s ,RSD r 1.02%)]obtained was free from any cross-reactivity and matrix complications in aqueous,pharmaceutical,serum,and liquid milk samples.The proposed sensor can be used as a practical sensor for ultra-trace analysis of bovine serum albumin in clinical settings.&2012Elsevier B.V.All rights reserved.1.IntroductionBovine serum albumin (BSA)is one of serum albumins that attract many biochemical applications.It is a major component of bovine plasma (5g/100mL)and plasma accounts for about 40%of the body pool of albumin (Hilger et al.,1996).It is used as a stabilizing agent in enzymatic reactions and as a carrier protein in many vaccines and medicines (Balen,2002).On exposure to BSA due to consumption of bovine milk and meat,its affects are similar as that of a prime allergen (Restani et al.,2004).Although great effort has been made to reduce exposure to BSA in pharmaceutics to eliminate the threat of bovine spongiforum encephalopathy,least attentions have been paid to comprehend the human immune response owing to the lack of fool-proof immunological methods for the direct evaluation of either BSA or anti-BSA antibodies.A number of anti-rabies vaccines [Semple Vaccine (ARV),Puriﬁed Vero Cell Rabies Vaccine (PVRV-Verorab and Abhayrab),and Puriﬁed Chick Embryo Cell Vaccine (PCEC-Rabipur)]have BSA content in ppb (ng mL À1)level.On account of some known complications of neurological accidents and allergic reactions (Chakravaty,2001),it becomes imperative for quality testing of each batch of these vaccines beyond the statuaryobligations.BSA content should be less than 50ng mL À1per human dose according to WHO standards (Deshmukh et al.,2004).Several diseases like a rare kidney disease called membra-nous naphropathy (Debiec et al.,2011),bovine spongiforum encephalopathy (Deshmukh et al.,2004),insulin dependent diabetes mellitus (Persaud and Barranco-Mendoza,2004),and crutzﬁeld–jacob (Brown,2005),are known that may be developed due to anticipated BSA exposure to human.Therefore,the detec-tion of BSA has become a wide area of research in immunology and bio-analytical studies.Extensive investigations have been reported for the determi-nation of BSA that include ﬂuorimetry (Sun et al.,2008),quartz crystal microgravimetry (Lin et al.,2004),reverse-phase high performance liquid chromatography (RP-HPLC)(Hamidi and Zarei,2009),direct electroanalysis (Chiku et al.,2008a ),and biosensor detection (Zhang et al.,2012).However,some of these methodologies needed extensive sample pretreatment,while others suffered from low selectivity,poor sensitivity,and high instrumentation.Electrochemical detection of higher non-metal proteins (e.g.,albumin)is reportedly very less.This is due to the apparent complexity and strong adsorption of protein on the electrode surface which may lead signal depression to be unpre-dictable and irreproducible.Many molecularly imprinted poly-mers (MIPs)have been developed for BSA (Kryscioa and Peppasa,2012;Ran et al.,2012;Gai et al.,2011;Zhang et al.,2010),without revealing analytical aspects.Furthermore,the imprintingContents lists available at SciVerse ScienceDirectjournal homepage:/locate/biosBiosensors and Bioelectronics0956-5663/$-see front matter &2012Elsevier B.V.All rights reserved./10.1016/j.bios.2012.07.080nCorresponding author.Tel.:þ919451954449;fax:þ915422268127.E-mail address:prof.bbpd@ (B.B.Prasad).Biosensors and Bioelectronics 39(2013)236–243solvents(porogens)for MIP development routinely being used were organic solvents that might unfold the native BSA,even at pre-polymerization stage.Insofar as MIP-based sensors(Chen et al.,2012;Yu et al.,2010)dealing ultra-trace analysis of BSA are concerned,there were some false-positive contributions with considerable amount of non-speciﬁc interferences and cross-reactivity.Although the recent seminal work of surface imprinted chitosan coated multiwalled carbon nanotubes(MWCNTs)-based biosensors(Chen et al.,2012)revealed a high level of sensitivity, unfortunately it was found stable only at41C for15day.Thus, this cannot be recommended as a practical sensor for in-ﬁeld and clinical settings.MIPs are synthetic antibody mimics,formed by cross-linking of organic(or inorganic)polymers in the presence of an analyte (template),which yield recognitive polymer networks with speciﬁc binding pockets for the biomolecules.Considering the incompat-ibility between the protein and organic solvents and moreover, its unfolding(denaturation)in harsh chemical conditions,the substrate(whole protein)imprinting in biological benign condi-tions,maintaining the physiological status of protein,is rather challenging.Protein imprinting in neutral aqueous condition might be an alternative that has,however,been drawn limited attention till date,primarily because of water competition toward hydrogen bonding interactions(Lin et al.,2009;Yang et al.,2011).We are of the opinion that the concerted effects of hydrophobically driven hydrogen bonding and electrostatic interactions might rescue the situation and a stable MIP-template adduct formation in aqueous condition could be feasible for the substrate-selective imprinting of entire protein molecule,without its denaturation in the experi-mental conditions.Besides,surface imprinting can also be imbibed in such work to avoid the protein entrapment in the polymer matrix and to facilitate the analyte mass-transfer without any impediment or blocking effect(Turner et al.,2006).We have adopted this approach for theﬁrst time for BSA imprinting where imprinted chains were grown via free radical polymerization, directly on the surface of a vinyl exposed MWCNTs–ceramic electrode(MWCNTs-CE).For MIP development in aqueous med-ium,both monomer and cross-linker ought to be soluble in water. In the present work,a typical monomer,tetraethylene glycol-3-morpholine propionate acrylate(TEGMPA),and a cross-linker, diacryloyl urea(DAU),were synthesized,which are water-soluble.TEGMPA is consisted of two kinds of functional group: one is the acrylate,which could be polymerized by free radical chain growth process,linking the TEGMPA in the polymer network and the other the30amine which readily abstracts a proton from water in neutral condition.Nevertheless,taken an excess amount of TEGMPA,may lead to the generation of corresponding free radical,after reaction with ammonium persulphate(APS,initiator). This species may serve as a co-initiator(Wu et al.,2006;Yu et al., 2009)to expedite the polymerization process.The objective of such fabrication is to develop a water-compatible,highly sensitive,and selective tool for the detection of BSA in real samples.2.Experimental2.1.ReagentsAll chemicals were of analytical reagent grade and used without further puriﬁcation.Acryloyl chloride(AC),urea,BSA, and APS,were purchased from Loba Chemie(Mumbai,India). 3-(trimethoxysilyl)propyl methacrylate(TMPM),tetraethylene glycol diacrylate(TEGDA),morpholine,MWCNTs(internal dia-meter2–6nm,outer diameter10–15nm,length0.1–10m m, and purity490%),and interferents were obtained from CDH (Delhi,India)and Aldrich(Steinheim,Germany).Phosphate buffer solution(PBS,pH 6.8,ionic strength0.1M)was used as a supporting electrolyte.Standard stock solution of BSA (500m g mLÀ1)was prepared using deionized triple-distilled water(conducting range(0.06–0.07)Â10À6S cmÀ1).Human blood serum samples were collected from a local pathology laboratory and stored in a refrigerator at$41C,before use.The pharmaceutical sample analyzed was Rabipur(Rabies vaccine).2.2.ApparatusAll voltammetric measurements were carried out with a polarographic analyzer/stripping voltammometer[model264A, EG&G Princeton Applied Research(PAR),USA]in conjunction with an electrode assembly(PAR model303A)and a X–Y chart recorder(PAR model RE0089).A conventional three-electrode system was adopted where platinum wire was used as an auxiliary electrode,saturated Ag/AgCl electrode as a reference electrode,and MIP-modiﬁed MWCNTs-CE as a working electrode.Chronocoulometry measurements were performed on an electro-chemical analyzer(CH instruments USA,model1200A).FT-IR and NMR spectroscopic measurements were performed by Varian3100 FT/IR(USA)and JEOL AL300FT-NMR(Japan),respectively.Morpho-logical studies of bare and MIP-modiﬁed electrode surface were made using scanning electron microscope(SEM)[JEOL,JSM,Netherlands, Model840A].All experiments were carried out at25711C.2.3.Synthesis of TEGMPASynthesis of TEGMPA is similar to that of ethylene glycol 3-morpholine propionate acrylate(Yu et al.,2009).For this a mixture of1.3mL of morpholine(15mmol)dissolved in7.5mL methanol was added drop-wise in TEGDA(1.36mL,15mmol)at 0–51C,under magnetic stirring in nitrogen atmosphere.FT-IR was used to monitor the completion of the reaction.When the N–H peak at3515cmÀ1was disappeared,methanol was removed by rotatory evaporation.The product so obtained was identiﬁed by1H NMR as follows:1H NMR(D2O):d6.1(1H),d5.8(1H),d 6.4(1H),d3.7(4H),d(4H),d3.6(4H),d4.2(4H),d3.5(8H), d2.6–2.8(4H).2.4.Synthesis of cross-linker(1,3-diacryloyl urea,DAU)Preparation and characterization of cross-linker,DAU,are described elsewhere(Prasad et al.,2010).In brief,to alkaline solution of urea(1.8g urea/15mL1.0M NaOH)4.87mL AC was added drop-wise and heated for20min at801C.A crude white product was separated out(the completion of reaction was indicated by the disappearance of the pungent smell of AC)and this was re-crystallized with ethanol.2.5.Electrode preparationMWCNTs render biocompatibility to the ceramic electrode, besides inculcating electro-conductivity.Furthermore,CNTs are homogeneously dispersed in ceramic(sol–gel)matrix to improve stability as compared to pest or composite electrode.MWCNTs-CE surface is more amenable to‘‘surface grafting from’’approach for the growth of a nanometer thin MIPﬁlm(Prasad et al.,2011).Also,this electrode is reportedly best amongst other modiﬁed electrodes (carbon CE,carbon CE modiﬁed with MWCNTs)in terms of providing lower charging current and hence better signal/noise ratio(Prasad et al.,2011).For MWCNTs-CE preparation in this work, 1.0mL ethanol,1.0mL TMPM,0.5mL water,and10.0m L of0.1M HCl were mixed together for30min to obtain sol–gel,followed by a hand on mixing with100mg MWCNTs.The suitable amount of this homo-genized mixtures wasﬁlled in a glass tube(outer diameter0.4cm,B.B.Prasad et al./Biosensors and Bioelectronics39(2013)236–243237length 3.0cm)under physical pressure,and then left to dry for 48–72h at room temperature.Electrical contact was achieved by insert-ing a copper wire through the top via open tip of the glass tube.The bottom tip was ﬁrst smoothened and polished with an emery paper to obtain a bright surface and then rinsed with water.As many as three vinyl exposed MWCNTs-CEs were obtained from the entire reaction mixture.In order to optimize the concentration of double bonds at the surface of electrode,four additional MWCNTs-CE were prepared using MWCNTs (100mg)and the varying amount of sol–gel (50,100,150,and 200m L).The amount of double bonds at the vinyl exposed MWCNTs-CE surface was determined by a catalytic bromine addition reaction between Br 2(KBrO 3/KBr in acidic condition)and the prevalent double bonds catalyzed by HgCl 2.The excess Br 2was evaluated by the standard method of iodometric titration.This led the determination of actual amount of Br 2consumed by double bonds that is equivalent to the concentration of vinylic double bonds at the electrode surface [For details vide Supplementary Data Section (S.1)].2.6.Grafting of MIP on the exposed vinyl groups of MWCNTs-CE For grafting MIP on to the vinyl exposed MWCNTs-CE (Scheme 1),the pre-polymerization mixture [template (BSA,0.001mmol/2mL TDW),monomer (TEGMPA,0.02mmol/1.0mL TDW),cross-linker (DAU,0.2mmol/1.0mL TDW),and APS (10m L,20%w/v)]was mixed with 15.0mg of MWCNT-COOH.The whole content was purged with N 2gas for 10min,and 10m L of this solution was spin coated on the MWCNTs-CE surface at 1500rpm for 20s.The electrode was kept in a UV chamber at 381C for 3h (with intermittent heating at 10min interval)to initiate free radical polymerization.Note that continuous exposure of electrode in UV chamber was avoided just to safeguard against denaturation of protein.Similar procedure was also followed to prepare the non-imprinted (control)polymer i.e.,NIP-grafted electrodes in the absence of template (BSA).Template molecules were retrieved from the polymeric (MIP-template adduct)ﬁlm by stirring the modiﬁed electrode into 0.1M NaOH for 30min.The complete template removal was ensured until no voltammetric response of the template was noticed.2.7.Voltammetric procedureFor electrochemical measurement,the analyte was ﬁrst accumu-lated with stirring for 60s (accumulation time)in an open circuitand then after a negative potential of 0.9V vs.Ag/AgCl was imposed.After 15s equilibration time,differential pulse voltammetric (DPV)run was scanned from À0.7V to þ0.7V vs.Ag/AgCl using pulse amplitude of 25mV,pulse width 50ms,and scan rate 10mV s À1.Cyclic voltammograms (CVs)were also recorded in the potential window À0.7V to þ0.7V at different scan rates (10–200mV s À1).Since oxygen did not inﬂuence the voltammetry of analyte,any deaeration of the cell content was not required.All DPV runs for each concentration of test analyte were quantiﬁed using the method of standard addition.3.Results and discussion3.1.Evaluation of graft efﬁciency and its effect on surface imprinting The concentration of the double bonds per unit area of electrode surface (E ,mol/cm 2)is used to evaluate the graft efﬁciency,and this can be deﬁned as E ¼ðV b ÀV s ÞC2Að1Þwhere V b and V s,are the volumes (L )of Na 2S 2O 3standard solution consumed in the blank and sample experiments (in the absence and presence of electrode),respectively,C is the concentration of Na 2S 2O 3standard solution (mol/L),and A is the area of MWCNTs-CE (cm 2).From the above equation,graft efﬁciencies were calculated for four different electrodes obtained using varying amount of TMPM as shown in Fig.S1.A .This depicted an increase in graft efﬁciency with the increase of TMPM.Interestingly,of all electrodes prepared with different amounts (50m L,100m L,150m L,200m L)of TMPM and duly modiﬁed with MIP,MIP-modiﬁed MWCNTs-CE carrying 150m L of TMPM at prelimin-ary layer responded a highest current (Fig.S1.B )for BSA (7.59ng mL À1).At the surface of this MIP-modiﬁed MWCNTs-CE,optimized vinyl double bonds by the virtue of TMPM grafting might have induced the selective and high occurrence of imprinting polymerization,leading to form thin MIP layer consisted of max-imum number of recognition sites.Any amount lower than 150m L TMPM and thereby the less amount of vinyl groups led to the low efﬁciency of imprinting polymerization,at the surface of electrode.On the contrary,vinyl groups were so crowded at MWCNTs-CE surface that the excessive amount of TMPM (4150m L)always resulted in a low occurrence of imprinting polymerization,duetoScheme 1.Schematic representation of MIP-modiﬁed MWCNTs-CE fabrication.B.B.Prasad et al./Biosensors and Bioelectronics 39(2013)236–243238the possible steric hinderance or self-polymerization of surface vinyl groups.Hence,MWCNTs(100mg)mixed with150m L of TMPM might be considered to be the best optimized composition to obtain MWCNTs-CE for polymer chain growth with efﬁcient imprinting.3.2.Polymer characteristicsVinyl exposed MWCNTs-CE inherited a unique characteristics provided by the sol–gel matrix with excellent biocompatibility and CNTs with attractive electrochemical features.Herein,TMPM is sandwiched between MWCNTs and MIP;TMPM molecules on the one hand interacted with the hydrophobic side walls of nanotubes while on the other side covalently anchored the imprinted polymer network(Scheme1).The parts of nanotubes shielded by a chain of silicate particles,however,may not be electrochemically accessible. Nevertheless,the exposed(unshielded)parts of the nanotubes still remain intact and are readily accessible for solution species to serve as nano-electrodes(Gong et al.,2005).The ratio of template,mono-mer,and cross-linker needs to be optimized since the recognition ability of imprinted polymer is primarily dependent on both the print molecule and functional precursors of the polymer.Different tem-plate to monomer molar ratios(1:10,1:20,1:40,1:60,and1:80)were tested on MWCNTs-CEs;the optimized template-monomer stoichio-metry of1:20yielded a maximum DPV response for a known concentration(9.95ng mLÀ1)of BSA(Fig.S2.A).There are reportedly 18net negative charges on each BSA molecule(Carter and Ho,1994) in neutral medium.Consequently,functional monomers carrying the equivalent amount of positive charges are minimally required for charge compensation to ensure a stable self assembly of BSA-TEGMPA complex in pre-polymer mixture.Accordingly,this complex with1:20stoichiometry,[BSA.TEGMPA20]þþ,eventually led the pro-duction of a cationic polymer motif,[BSA.TEGMPA20]2nþ,for sub-strate imprinting on MWCNTs-CE surface.Any amount of TEGMPA less than0.02mmol revealed instability of the system responding lower current due to the increased heterogeneity in the structure. Furthermore,too many functional monomers excess than requisite for self assembly may lead non-speciﬁc analyte binding.The cross-linker amount could be an aided factor toward the stability of protein–monomer complex.In this work,the maximum development of DPV current response occurred when the cross-linker(DAU) amount0.2mmol was used with1:20complex.This is due to the improved stabilization of binding sites.The further increase of cross-linker should be avoided,since this may impede the template diffusion across the MIP motif,as was evinced by the declined response of BSA encapsulation(Fig.S2.B).In the polymerization, APS served as an initiator while monomer acted as an accelerator of the polymerization process in the capacity of co-initiator on abstrac-tion of proton and generation of initiating free radicals thereof,as shown in Fig.S3(Yu et al.,2009).Polymerization conditions have drastic impact on protein imprinting.The concerted effect of initiator and co-initiator in the form of two generated free radicals(Fig.S3) triggered the polymerization kinetics at low polymerization tempera-ture that helped avoiding protein denaturation on exposure to UV light.An optimum of381C polymerization temperature for3h,on intermittent exposure to UV light for10min interval,resulted in electrode modiﬁcation for optimum DPV current response(Fig.S2.C). Exceeding temperature above381C(Fig S2.D)might have induced conformational changes in BSA molecule(Takeda et al.,1989)that resulted in decreased DPV current.Also,at temperature lower than 381C,the polymerization process required longer time for complete reaction.3.3.Spectral and surface characterizationFT-IR(KBr)spectra(Fig.S4)of template,monomer,MIP,and MIP-adduct are comparatively examined to support the proposed binding mechanism(Fig.1)in aqueous medium.BSA is a large guest molecule with several exposed reactive functionalities,at its surface,for binding with the host MIP.Such bindings are suggested on the basis of downward shifts of IR bands of participating key groups.[For details,vide Supplementary Data Section S.2].An insight into the surface morphology of the modiﬁed surface of MWCNTs-CE was feasible through SEM images(Fig.2).The bare MWCNTs-CE showed distinctly visible nanotubes(Fig.2A). Surface of MIP-BSA adduct-modiﬁed MWCNTs-CE is relatively compact(Fig.2B).Upon template retrieval from this,the MIP-modiﬁed electrode(Fig.2C)revealed rather a rough surface and thereby a high surface area ofﬁlm,which is beneﬁcial for the adsorption of proteins.Fig.2D displays the side view of MIP modiﬁed MWCNTs-CE reﬂecting68.1nm thickness of coating layer[vide Supplementary Data Section S.3].3.4.Electrochemical behaviorFig.3A shows CV runs of1.99ng mLÀ1of BSA,recorded within the potential windowÀ0.7V toþ0.7V(vs.Ag/AgCl),after analyte accumulation for60s and subsequently exposing the MIP-modiﬁed MWCNTs-CE sensor atÀ0.9V for15s equilibration time.The bare(unmodiﬁed)electrode,however,responded only at a higher scan rate(Z100mV sÀ1)for the higher concentration of BSA(Z20.0ng mLÀ1),with broader and ill deﬁned features (Fig.3A,inset).The accumulation of analyte was favored owing to strong electrostatic interaction between positively charged MIP ﬁlm and negatively charged BSA molecule,irrespective of nega-tive accumulation potential rÀ0.9V imposed.The polarity on the modiﬁed MWCNTs-CE could drastically be altered on applying more negative potential(4À0.9V)which restricted analyte binding.BSA electrochemistry is reportedly conﬁned with the mini-mum of three redox active amino acid residues[Cystein(CYS),Fig.1.Suggested binding mechanism of BSA via multiple point electrostatic and hydrogen bonding interactions(BSA:monomer molar ratio1:20;for the sake of brevity,only a few monomeric units are shown)with the MIP motif.B.B.Prasad et al./Biosensors and Bioelectronics39(2013)236–243239tyrosine,and tryptophan (TRP)](Chiku et al.,2008b ).Besides,BSA redox reaction is also expected to take place on the sulphur double bonds in typical cases (Shao et al.,2005;Stankovich and Bard,1978).In the present instance,the electro-active groups of CYS,tyrosine and TRP are bound through H-bondings within the MIP cavities (Fig.1),and thus not free to take part in redox process in bound condition.Notably,BSA molecules are not stripped off the cavities owing to the strong electrostatic attraction between positively charged electrode and negatively charged template molecules on anodic scan.Since MIP particles are covalently linked with MWCNTs-CE,an apprehension of leaching of MIP adduct is ruled out during anodic scan.Accordingly,only option left for BSA oxidation is solely dependent upon the disulphide bonds.Disulphide bonds exposed at the surface of BSA were reduced initially at accumulation stage,given negative potential for the reduction.This process may thus be written as follows (Shao et al.,2005):Accumulation stage:(R–S ¼S–R)solution -(R–S ¼S–R)adsorbedCathodic reduction stage:(R–S ¼S–R)adsorbed þ2H þþ2e À-(R–SH–SH–R)adsorbed (at À0.9V)Anodic oxidation stage:(R–SH–SH–R)adsorbed -(R–S ¼S–R)adsorbed þ2H þþ2e ÀThe quasi-reversibility nature of the peaks is suggested by the corresponding D E p range,varying from 0.075V to 0.300V with the increase of scan rates (10–200mV s À1),and the value of I pa /I pcgreater than unity.The broad peak width at all scan rates indicates the strong adsorption of both reduced and oxidized species;pre and post-adsorption peaks are concealed within the drawn-out peaks (feeble pre-adsorption peaks,however,seen at high scan rates).The quasi-reversibility for this process was also conﬁrmed from the different slopes of I pa vs.n 1/2and I pc vs.n 1/2proﬁles as shown below:I pa ¼ð2:8970:21Þn 1=2þðÀ7:4971:84Þ,R 2¼0:98ð2ÞI pc ¼ð1:8970:15Þn 1=2þðÀ4:9371:34Þ,R 2¼0:98ð3ÞUnder these conditions of quasi-reversibility,it may be possi-ble to study the kinetics of the electrode reaction.Accordingly,the separation of peak potential,D E p ,should be a measure of the standard rate constant (K 0)for electron transfer process.These D E p values were introduced in the working curve described by Nicholson (1965)for obtaining the transfer parameter,c ,and then the value of K 0was estimated according to the following equation (Pad and Leddy,1995).C ¼K 0ðD oxi =D red Þa =2ðD oxi nFv =RT Þð4ÞTo estimate K 0from Eq.(4),the diffusion coefﬁcient (D )(assuming D ox ¼D red ¼D )was obtained from the chronocoulometry experiment.According to the integrated Cottrell equation (Bard and Faulker,2001),the relationship between Q and t 1/2(Anson plots)can be described as follows:Q ¼2nFACD 1=2t 1=2p À1=2þQ dl þQ ads ð5ÞQ ads ¼nFa G 0ð6ÞFig.2.SEM images of (A)unmodiﬁed MWCNTs-CE,(B)MIP-adduct modiﬁed MWCNTs-CE,(C)MIP modiﬁed MWCNTs-CE and (D)side view of modiﬁed MWCNTs-CE.B.B.Prasad et al./Biosensors and Bioelectronics 39(2013)236–243240where A is area of electrode (0.0827cm 2),C is the concentration (1.99ng mL À1)of BSA,Q dl is the double layer charge,Q ads is the faradic oxidative charge,and G 0is the surface coverage.For bare and modiﬁed electrodes,Q dl and total charge (Q dl þQ ads )were estimated from the respective intercepts of the Anson plots (Q and t 1/2)in the absence and presence of BSA.Accordingly,Q ads was calculated as 8.79Â10À6.Surface coverage can be obtained in terms of number of electron ‘n ’by the equation deﬁning Nerstian adsorbent layer (Hassen et al.,2007):I p ¼n 2F 24RT"#G 0A nð7ÞAccordingly,n and G 0were obtained to be 1.95and 5.59Â10À10mol cm À2,respectively.This reﬂects total surface coverage of speciﬁcally bound analyte (4.6Â10À11mol or 2.77Â1013molecules)to MIP cavities (each molecule per cavity).The slope of the Anson plot (0.346Â10À3m C s À1)revealed an estimate of 2.55Â10À2cm 2s À1for D .Substituting the D value (D ox ¼D red )the K 0values at different scan rates were calculated from Eq.(4)for different values of c [1.75(10mV s À1),0.17(20mV s À1),0.11(50mV s À1)]as 0.437,0.060,and 0.061cm s À1(mean K 0¼0.186cm s À1).The decrease in K 0represents sluggish kinetics of electron-transport for BSA oxidation with the increase of scan rate,under the adsorbed state of analyte in the domain of molecular cavities of imprinted polymer.Insofar as the sensitivity of the measurement is concerned,the DPV technique is better than CV at the scan rate,10mV s À1.This is because of the fact that an approximately 3.5-fold higher current is obtained in the sufﬁcient time scale of measurement,using pulse amplitude 25mV and pulse width 25ms.DPV runs (Fig.3B)showed symmetrical peaks for BSA detection in aqueous and real samples (serum,milk,and vaccine)with the MIP modiﬁed electrodes,without any matrix complication.NIP-modiﬁed electrodes did not respond to BSA in aqueous and pharmaceutical samples.However,some non-speciﬁc adsorption of BSA could be seen on NIP-modiﬁed electrode in serum samples which was easily removed simply by water washing (n ¼3,0.5mL).The reproducible regeneration of modiﬁed electrodes for the next use was feasible adapting the method of template retrieval (vide Section 2.6).Accordingly,the used electrode was regenerated by dipping in 0.1M NaOH solution for 30min,under stirred condition.The overall renewal of the modiﬁed electrode was conﬁrmed by DPV until no template residue was left in the modiﬁed ﬁlm to respond any voltammetric current.Any deformation of MIP cavities was ruled out after regeneration,as the renewed sensor always responded quantitative (100%)response of BSA in aqueous medium.In this work,any single modiﬁed electrode could be used for as many as 60consecutive runs,with quantitative recoveries,after regeneration by the method of template extraction (Fig.S5).Further-more,the reproducibility on a single electrode,which was renewed after each run,was examined by obtaining multiple DPV runs (Fig.3B,run c)for BSA (1.99ng mL À1)in aqueous medium.Insofar as electrode to electrode variation is concerned,a parallel measurement for BSA (2.89ng mL À1)in blood serum on three modiﬁed electrodes,prepared in the same ways in different batches,responded quantita-tive recoveries with RSD 1.5%(Fig.3B,run f).This indicates precision of the result as well as reproducibility in MIP sensor development.Notably,the multiple runs (Fig.3B,runs c and f)both in aqueous and blood serum samples obtained with the regenerated MIP-sensor,show requisite ruggedness of the sensor without revealing any medium effect and false-positives.3.5.Analyte adsorption behaviorThe Langmuir equation (Eq.(8))provides a relationship between the concentration (C )of BSA solution,and the amount of BSA adsorbed on the surface (!0)(Smiechowski et al.,2006):CG¼1B ads GmaxþCGmaxð8Þwhere B ads is the adsorption coefﬁcient and !max represents the maximum amount of protein that can adsorb on the surface.Thus,a linear equation C/G 0¼(0.003470.0003)Â1011C þ(0.046670.0029)(R 2¼0.984),for the plot of C/G 0vs.C is obtained.The intercept (equivalent to slope/B ads )of this equation suggests an estimate of adsorption coefﬁcient (B ads )to be 7.29Â109L mol À1.The Gibbs free energy of adsorption,D G ads can be estimated using equation (Wright et al.,2004):B ads ¼155:5exp ÀD G adsRTð9Þwhere 55.5represents the molar concentration of water (mol L À1)which was used as the solvent.The large negative value of D G ads (À66.23KJ mol À1)indicates spontaneous analyte adsorption on the MIP surface.The value of D G ,in the present case,is higher to that reported earlier for proteins (Smiechowski et al.,2006).3.6.Optimization of analytical parametersAs observed in CV measurement,the extent of analyte accu-mulation was negligibly affected by the negative polarization of modiﬁed MWCNTs-CE and accumulation was effective even atanFig.3.(A)CV runs of BSA (1.99ng mL À1)at different scan rates:(a)blank,10,(b)10,(c)20,(d)50,(e)100,and (f)200mV s À1at MIP modiﬁed MWCNTs-CE and unmodiﬁed MWCNTs-CE (inset).(B)DPV responses on MIP modiﬁed MWCNTs-CE run a for blank,runs c and d for BSA (1.99and 6.99ng mL À1)in aqueous medium,runs (f)and (g)for BSA (2.89and 4.91ng mL À1)in serum,run (i)for BSA (4.48ng mL À1)in vaccine,run (k)for BSA (5.25ng mL À1)in milk,runs (b),(e),(h),and (j)for BSA (20.0ng mL À1)at NIP modiﬁed MWCNTs-CE in aqueous,serum,pharmaceutical,and milk samples,respectively.B.B.Prasad et al./Biosensors and Bioelectronics 39(2013)236–243241。

U.FL Series(射频同轴线及接插头规格)

12004.21.9(2.0M a x )2.4(2.5M a x )3(3.2M a x )U.FL-LP(V)-040U.FL-LP-040U.FL-LP-066E.FL-LP-040E.FL-LP-066U.FLE.FLs Features1.Extremely Small Occupied Mounting AreaReduced board space requirement by 18% to 7.7mm 2, when compared with Hirose ’s E.FL connectors.2.Light WeightOne of the world’s lightest coaxial connectors.Receptacle: 15.7mg3.Frequencies of Up to 6GHzTo meet the frequency requirements of a wide variety of miniature equipment, these connectors offer high frequency performance from DC to 6 GHz.4.Board Placement with Automatic Equipment Supplied on tape-and-reel packaging.e of Ultra-fine Teflon CableSeveral of ultra-fine single and double shielded Teflon ®coaxial cables terminate to U.FL plug.6. Simple DisconnectionDedicated tool allows reliable un-mating of the plug.er Friendly Mating OperationTactile lock feeling ensures and confirms reliable connection.s ApplicationsMobile phones, Wireless LAN, Mini-PCI, Bluetooth, PDA, GPS,electronic measuring instruments, etc.*Teflon is a registered trademark of DuPont.Mated Height Comparison(With E.FL series)q Space Factor of Mated Connector2sProduct Specifications*V.S.W.R. Measurement SystemThe above V.S.W.R. standard values were measured using the measurement connection shown below.Note 1: Cable type connectors were measured with SMA conversion adaptersattached to both ends of the harness product of a suitable 100cm cable.Note 2: Board type connectors were mounted to a 50Ωglass epoxy board andmeasurements were conducted with SMA conversion adapters attached.s Material/Finishes3s ReceptaclesNote 1: Receptacles of (01) specification are sold by thebag with 100 pieces per bag. Please order in pack units.Note 2: Receptacles of (10) specification are sold by thereel (which contains 2,500 pieces). Please order in reel units.Note 3: This area may be covered by insulating material.q Packaging SpecificationsEmbossed Carrier Tape DimensionsReel DimensionsGNDGNDGND GND Cut Out Prohibition AreaRecommended PCB mounting patternSIG SIG Ø232.60.61.250.351.05±0.051±0.051±0.052.2±0.054±0.051.9±0.051.2M a x (N o t e 3)(3.1)2.61.81.75±0.112±0.38±0.12±0.14±0.10.31.6Center contactUnreeling direction5.5±0.1Ø1.5+0.1 01.814Ø13Ø21Ø330±24s Cable Assembly (Plug)* SA : Silver plated annealed copper wire, TA : Tin plated annealed copper wire, TAT : Tin plated copper wire alloyed with tin5s How to Specify Plug Cable AssemblyDimensions of U.FL Series assembly products should be made as indicated below.Please contact Hirose Sales Representative for cable length and cable end treatment.6s Conversion Adaptersq SMA Conversion Adapter(Mating portion: U.FL side jack - SMA side plug)Note:The U.FL side mating portions has a lower lock retentionforce than the regular product, therefore, cannot be used for purposes other than performance measurements.(10.7)8HEXs Receptacle InspectionThis receptacle is used for inspecting the continuity, withstand voltage, and other aspects of the harness product.This receptacle is used for check the continuity, withstanding voltage, and other performance of the cable assembly products.Note:Part No. U.FL-LP-N-2 for U.FL-LP-040/066/088.Part No. U.FL-LP(V)-N-2 for U.FL-LP(V)-040/U.FL-LP-062.12.957HEXM5∞0.51(7.9)(4.4)s Plug Extraction ToolThis jig is used for extraction from a mating condition.q SMA Conversion Adapter(Mating portion: U.FL side plug - SMA side jack)Note:The U.FL side mating portions has a lower lock retentionforce than the regular product, therefore, cannot be usedfor purposes other than performance measurements.14.05Ø6.351/4-36UNS-2A65.6(4.05)q SMA Conversion Adapter(Mating portion: U.FL side plug-SMA side jack)Note: This connector is used by compressing the matedportion of U.FL side onto the U.FL-R-SMT portion.(18.6)1/4-36UNS-2A6 5.5(4)7s Usage Precautions1. Plugs。

PCBdifferentialinsertionlossmeasurementsystem

PCBloss Accurate measurement oftransmission line insertion loss for multi-GHz fabricationAtlas Si SET2DILfor SPPEnsures loss Incorporates compliant and Propagation Easy operatorspolarAtlas Si is a precision insertion lossmeasurement package designed specifically for PCB fabricators and OEMs.It provides accurate,repeatable measurements offrequency based transmission line losses,allowing fabricators to meet stringent targets that maintain signal integrity within the limits of the latest high-speed chipsets.The emergence of a new generation of high-speed busses,such as SuperSpeed USB 3.0,PCI Express ®Gen2.0,XAUI and RocketIO TM means that PCB fabricators must be ready to provide tight control over losses from multi-GHz PCB transmission lines.The differential signalling techniques used by these new busses allow PCBs operating at multi-GHz to be manufactured usingconventional and cost-effective PCB base materials.However,while this gives OEM designers the combination of high performance and low PCB costs,it means that PCB fabricators must be able to accurately measure and control transmission line losses.Using Polar Atlas insertion loss measurement systems in conjunction with the industry standard Si9000e field solver enables PCB fabricators to predict and measure the characteristics of ultra high speed differential signal lines and reduce the number of prototype turns before committing to production.All new IPS series ergonomic probes (identified by the blue color on the tip and the labels,and the robust metal insert supporting the SMAconnector)are compatible with Atlas in situations where there is a need to measure both impedance and insertion lossSnapshot archive of fullor single test dataincluding both results andS DD 21displaysA CCURATEAND REPEATABLE INSERTION LOSSMEASUREMENTS IN APCB FABRICATION ENVIRONMENT.Ergonomic ESD safe GGB probe bodyMulti-GHz PCB fabricationWhile frequency-based losses are usually negligible on PCBs operating below 2GHz,above this level signal losses become a major problem for PCBs manufactured in conventional FR4and other low-cost laminate materials.As more OEMs integrate high-speed chipsets onto their boards,the need for PCB fabricators to measure and control frequency-based lossesincreases.Measuring transmission line losses presents fabricators with a set of challenges very different from those for controlling impedance:whereas trace width and dielectric separation are among the most important criteria for impedance control,dielectric loss and smoothness of the copper foils are the crucial parameters forcontrolling frequency-based losses.Fast and accurate measurement of transmission line losses in theproduction environment allows you to increase manufacturing yield and reduces the comparatively high cost of multi-GHz PCB fabrication.Atlas softwareAtlas uses powerful mathematical processing techniques to allow non-skilled operators to measure differential frequency-dependent losses from a test coupon quickly and easily.The system is easy to set up,easy to use and delivers fast results without the need for extensive operator training.A single insertion loss test can be performed in a fraction of the time needed for traditional techniques.Atlas is compliant with IPC TM6502.5.5.12(Test Methods to Determine the Amount of Signal Loss on Printed Boards)andprovides support for SPP (Short Pulse Propagation)Bi-directional SET2DIL (Single Ended TDR to Differential Insertion Loss)and SET2SEIL (Single Ended TDR to Single Ended Insertion Loss).Use the Atlas DRG Pro toprovide professionally presented customer conformance reports.Alternatively,Atlas now offersdirect export of results in Microsoft excelformat.SPP allows extraction of PCB electrical characteristics that impact signal propagation.The technique uses your existing TDR/TDT equipment and produces frequency dependent parameters such as the propagation constant(alpha,attenuation and beta,phase constant)and effective dielectric constant along with the characteristic impedance(including even and odd mode impedance).Atlas measurements include launch point extrapolation/long line regression fit.Atlas also employs the SET2DIL test method to extract differential insertion loss and SET2SEIL to extract single ended insertion loss along with effective Er.Customers may license either or both techniques. Atlas is compatible with the Tektronix DSA8300,DSA8200and TDS8000 oscilloscopes and80E series TDR sampling heads which provide the raw data from which Atlas can calculate insertion loss results.Choose between hardware and software impulse forming networks Atlas provides support for both hardware and software emulated impulse forming networks(IFNs)for SPP testing.Atlas allows the SPP test steps to be performed in any order guiding the user graphically through the test via a series of helpful screens detailing the connection of cables and impulse forming networks.Test results in both table and waveform format can be saved and retrieved as snapshots forsubsequent sharing,viewing and analysis or exported in CSV format for evaluation and study.Ideal for backplane testingUnique to Polar’s Atlas,emulated impulse forming networks(pulse differentiators)will save both testing time and equipment costs–and increase signal/noise ratio and allow SPP testing on longer lines. ESD protection designed for SET2DIL&SPP applications–Atlas800 As high bandwidth systems are inherently sensitive to electrostatic discharge(ESD)they must be implemented with the highest level of ESD control that is practical in the test environment.Atlas software is fully integrated with the Atlas800ESD protection unit which provides both26GHz bandwidth switching and active coupon pre-discharge.Atlas 800ESD protection unit should be used in an environment with good ESD practice in order to minimise your running costs.Atlas test system for SET2DIL testing of frequency-based insertion losses–S DD21and S21 Compatible with Tektronix DSA8300Time Domain Reflectometer(TDR)with80E series TDR sampling modules Compatible with GGB Picoprobe type TLP-1 450micron GSSG(for SET2DIL testing) Compatible with other Polar GHz PCB design and fabrication tools–Si9000e/ Speedstack Si and CGen Si –Insertion Loss CouponGenerator.Atlas is compatible with both commonly specified test techniques for TDR-based insertion loss (S DD21)measurement,SET2DIL&SPP.Atlas can be used for standalone testing of insertion loss at the point of fabrication or as part of a suite of GHz PCB fabrication tools with other Polar products, including the Si9000e Transmission Line Field Solver,Speedstack Si Layer Stack-up Design System and the CGen Si Insertion Loss Coupon Generator.The combination of these powerful tools can help to improve manufacturing yields as well as reduce the cost of multi-GHz PCB fabrication. Using the Si9000e to analyse and predict losses during the design stage,the fabricator can quickly model a range of scenarios,dramatically reducing both material costs and engineering time,to improve manufacturing yields.The data on the modeled stack geometries can then be imported into the CGen coupon generator to create accurate Atlas SET2DIL test coupons.•Insertion loss testing uses criteria different from impedance control•Allows PCBs over2GHz to be manufactured with the most cost-effective laminates•Meets PCB fabricators’growing need to test lossy lines •Reduces the high cost of multi-GHz PCB fabrication •Insertion loss testing is often specified in addition toimpedance controlOrdering InformationAtlas for SET2DIL insertion loss measurement:Atlas SET2DIL Atlas for SPP insertion loss measurement:Atlas SPPAtlas for both SET2DIL and SPP techniques:Atlas SET2DIL &SPP Atlas 2channel impedance test &ESD isolation:Atlas PCB 2CH Atlas 4channel impedance test &ESD isolation:Atlas PCB 4CH Datalogging:AtlasDRG ProIncluded in all of the above Atlas 800ESD protection unit compatible with SPP &SET2DIL testing.About Polar InstrumentsPolar Instruments is a market leader in designing and manufacturing tools to simplify and enhance the design,fabrication and testing of printed circuit boards (PCBs).Their innovative tools include the industry-standard Controlled Impedance Test System (CITS)which provides the global PCB industry with an easy-to-use test system for high-speed digital and RF boards,as well as class-leading tools for fast and accurate design and testing of controlled impedance in PCBs.Polar also leads the industry in tools for automated PCB layer stackup design and documentation.Polar Instruments was established in 1976and now has operations and channel partners in the US,UK,Europe and Asia Pacific.polar USA /CANADA /MEXICOPolar Instruments Inc T:(503)3565270E:*******************************ASIA /PACIFIC /SINGAPORE*Polar Instruments (Asia Pacific)Pte Ltd T:+6568737470E:**********************************CHINA*Polar Instruments (China)Ltd East China -Shanghai T:+862135307470E:**********************************South China -Zhuhai T:+867563367470E:********************************INDIA *Polar Instruments (India)Pvt Ltd T:+918049116666E:***************************JAPAN *Gardien Japan Co.Ltd T:+81339046230E:***************************KOREA *Polar Instruments Korea Corp T:+82226442493/4E:***************************TAIWAN *Polar Instruments Taiwan T:+886229917470E:********************************GERMANY,AUSTRIA,SWITZERLAND *Polar Instruments GmbH T:+43766620041-0E:************************************UNITED KINGDOM /EUROPE Polar Instruments (Europe)Ltd T:+442392269113E:*************************************REST OF WORLD Polar Instruments Ltd(Head Office)T:+441481253081E:************************************Authorised distributor for Polar Instruments Ltd's products.These independent operations are neither agents or subsidiaries of Polar Instruments Ltd.©Polar Instruments 2015.Polar Instruments pursues a policy of continuous improvement.The specifications in this document may therefore be changed without notice.All trademarks recognised.LIT233:2015。

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Measurement of SMA Drive Characteristics1P. Drahoš, 2O. Čičáková1Department of Control and Automation, Slovak University of Technology, Faculty ofElectrical Engineering and Information Technology, Bratislava, Slovakia 2Department of Measurement, Slovak Technical University Faculty of ElectricalEngineering and Information Technology, Bratislava, SlovakiaEmail: drahos@elf.stuba.skSMA (Shape Memory Alloy) drive has the behavior of the non-linear, hysteresis and dynamic system with many parameters. This system has changeable delay time and depends on initial conditions and motion direction. Transitions between inner hysteresis loops depend on the previous states – the SMA memory. Considering the complexity of conditions, failure effects and quantity of parameters, the SMA drive qualities measurements by programmable digital measuring devices with GPIB communication was automated.Keywords: Shape Memory Alloy, Ni-Ti alloy, martensitic transformation, SMA actuator1.IntroductionShape Memory Alloy converts thermal energy to mechanical work by the change of lattice structure (so-called thermoelastic martensitic transformation) [1]. Drives constructed from these alloys belong to the group of thermal drives (thermal actuators). In other famous thermal actuators physical basic of the shape memory is different. SMA uses “inner molecule forces” and offers new drive technique perspectives with quite new properties as diverse forms and shapes of SMA drives and very good ratio mechanical power – mass, noiseless, no need of maintenance, anticorrosion (Ni-Ti). Measurement of electric resistance and SMA drive temperature seems to be the convenient possibility for position information reconstruction and for making feedback without using the position sensor which with its mass and dimensions overtops the SMA drive itself. For this purpose the measuring stand (place) for Ni-Ti wire loaded by constant load was made. It allows to measure electric resistance and power, position and temperature of the Ni-Ti drive sample. By means of digital source and multimeters with GPIB communication the measuring experiment was controlled.2.Subject and MethodsThe subject of research is the SMA drive from Ni-Ti alloy. It is realized as the wire with the circle cross-section. It is mechanically fastened and electrically connected in the same place. SMA drive is heated through electric resistance heating, cooled by natural air-cooling and loaded by constant reverse load. This load is limited by the fatigue process of material. The SMA drive model is non-linear dynamic system with many parameters and complicated inner couplings [2],[3],[4]. This system is being discovered step-by-step by many research works about material physics, thermodynamics and empiric knowledge from practical applications. In majority of the works the certain degree of idealization of SMA drive model is considered. The proposional position control of SMA drive is not possible only on the basis of mathematic models with sufficient accuracy. Measuring of electrical resistance and temperature of SMA drive is demonstrated as the convenient possibility for motion information reconstruction. The author in [5] had deduced the general equation for SMA drive electric resistance:dT d K d RdR RT e αεσπε++= (1)Where: T = temperature; σ = stress; ε = strain; πe = piesoelectric coeffientR = electric resistance; αRT = coefficient; K ε = shape sensitivity coefficientdirect source with Burr Brown circuit (own construction)HP1 až HP5: multimeters HP 34 401A, Hewlett PackardMP1: intelligent measuring temperature converter, Sitrans T, SiemensMP2: intelligent measuring temperature converter, TT 301, SmarLVDT: linear contactless transformer position sensor, 0- 6 mm, ZPAFig. 1. SMA automated measurement schemeBasic status quantities are: temperature T, stress σ, strain ε and martensite fraction X. Electric power P, ambient temperature To, mechanic load in form of force F L acting in direct axis drive are input quantities of measured system. Status quantity X depends on temperature T and stress σ and in equation it influences coefficients πe and αRT . From the tensometer theory the piesoelectric coeffient πe = δρ/δσ/ρ [Mpa -1] is known. Coefficient αRT = δρ/δT /ρ[°C -1] explains the direct influence of the temperature on the SMA specific relativeresistance. Shape sensitivity coefficient K ε for Ni-Ti is K ε = 1+2µ = 1,66. The experiment was oriented to the measurement of static characteristic of real SMA drive to generate feedback from temperature and SMA electric resistance. To that fact it is calibration measurement for reconstruction the position. Next aim is mapping the drive behavior at cyclic and irregular movements inside the hysteresis loops. Measured quantities at Fig.1. are: SMA exciting current, SMA voltage, SMA temperature (thermocouple K) and SMA position (sensor LVDT-ZPA), ambient temperature (Pt100). Ni-Ti wire (sizes: length 100 mm, diameter 0,32 mm, weight 52 mg) was connected in 4-wire Ohm measurement. Electric resistance (cca 1 Ohm) and electric power (to 1 W) supplying SMA drive were evaluated. To guarantee the repeatability these conditions are needed to be secured before and during the experiment:1. Constant conditions for SMA cooling (air flow, ambient temperature).2. “Erasing the drive memory” before the measurement by means of thermal cycling without load.3. To measure after loading in define cycle at same input conditions.4. Constant load during the measurement; it represents influence of parameter.3. The Efficiency of the Measuring Methods and ResultsConsidering the quantity of conditions and parameters a lot of measurements is needed. We can measure e.g. number of samples per hour for every method for certain application. “Manual” measurement has low accuracy and efficiency is cca 25 samples/hour. Programmable multimeters measurement allows to increase the accuracy of the results and efficiency to 60-90 steady values/hour. Mean values and errors from 10 samples at every working point were calculated.Fig.2. Fourfold “immersion” to hysteresis loops with full return to martensiteImmersion to hysteresis loop with full return to martensite is illustrated at Fig.2. The immersion is fourfold plus outside loop. In rising part maximum current of loops were selected with form spacing. Compared with this, the first two loops overlap. At third mode of the measurement the method proposed in [5] has changed in principle. By independent thermal control loop the slowly linear rising signal 1°C/32s (taking in account the drive time constant) was generated through the whole range of temperature up and down. From this quasi-steady state the static characteristic is possible to mention. Also dynamic error can be determined. Automated measurement period was 2s. The measurement efficiency is 180012304008001200I [m A ]∆L[m m]samples/hour. By this way, at least the graphic continuous characteristic behavior at Fig.3. is possible to gain.Fig.3. Temperature dependence of SMA electric resistanceThe measurements were realized by 5 digital multimeters HP34401A and direct current/voltage source Agilent E3640A. These devices have interfaces GPIB and RS-232 for communication with PC. The resolution was set to 6½ digits on all multimeters. Applied programs were written in Borland C. The use of PC allows to calculate errors and uncertainties in easy way. Relative error of the measured data for current going through SMA was smaller than 0,15 %, for voltage on SMA it was smaller than 0,005 %. 4. ConclusionAutomated experimental working place allows on samples from Ni-Ti with parameters mentioned above (length,..) to measure the position, temperature, electric resistance and electric power. Automation of the measurement has brought high efficiency of measuring, sophisticated control of independent input parameters, evaluation of accuracy, security ofResearch of SMA drives was realized within grant research projects at Department of Control and Automation STU FEI Bratislava: VEGA 7628/20 and automated measurements were realized by cooperation with Department of Measurement STU FEI Bratislava. References[1] Duerig, T.W. et al. 1990. Engineering Aspects of Shape Memory Alloys . London: Butterworth-Heinemann Ltd., 1990. p.491.[2] Biwa, S. et al. 1996. Analysis of Bias-Type Actuator Using Shape Memory Alloy Basedon Its Thermomechanical Constitutive Description. In JSME Journal ,1996, vol. 39, no 4, pp. 526-532.[3] Drahoš, P. 1997. Model of Shape Memory Alloy Drive. In TRANSCOM 97. Proceedings of 2nd Conference, University of Žilina: 1997,vol. 3. pp. 265-268.[4] Drahoš, P. 2000. Thermodynamic Model of SMA Drive. In Process Control 2000. [CD- Rom]. Proceedings of 4th Conference in ČR, University of Pardubice: 2000, pp.71.[5] Drahoš, P. 2002. Contribution to Synthesis of Shape Memory Alloy Actuator. FEI STU Bratislava 2002. Project of Doctorate Thesis.0,9650,9851,0051,0251,04520406080100120140R [Ω]]。