BD5354中文资料
BD52XXG/FVE series BD53XXG/FVE series
High-accuracy detection voltage Low current consumption
Description
Features
Applications VOL T AGE DETECTOR IC with adjustable delay time
BD52XXG/FVE, BD53XXG/FVE are series of high-accuracy detection voltage and low current consumption VOLTAGE DETECTOR ICs adopting CMOS process.
New lineup of 152 types with delay time circuit have developed in addition to well-reputed 152 types of VOLTAGE DETECTOR ICs.Any delay time can be established by using small capacitor due to high-resistance process technology.
Total 152 types of VOLTAGE DETECTOR ICs including
BD52XXG/FVE series (Nch open drain output) and BD53XXG/FVE series (CMOS output), each of which has 38 kinds in every 0.1V step (2.3~6.0V) have developed.1) Detection voltage: 0.1V step line-up 2.3~6.0V (Typ.)2) High-accuracy detection voltage:±1.5% (Max.)3) Ultra low current consumption: 0.95µA (Typ.)4) Nch open drain output (BD52XXG/FVE series), CMOS output (BD53XXG/FVE series)
5) Small VSOF5(EMP5), SSOP5(SMP5C2) package
Every kind of appliances with microcontroller and logic circuit BD52XXG/FVE
BD53XXG/FVE
Pin No.SSOP5(SMP5C2)VSOF5(EMP5)
Vout Vout
V DD V DD
GND GND
NC.CT SUB
CT
12345 Application Circuit
Absolute Maximum Ratings (Ta=25˚C)
Characteristic diagram and Measurement circuit
Electrical characteristics (Unless otherwise noted; Ta=-25~85˚C)
1 ˚C ˚C *
2 Derating: 2.1mW/˚C for operation above Ta=25˚C .(Mounted on a 70.0mmX70.0mmX16mm glass epoxy PCB.)
*2 T PLH : V DD =(V DET typ.–0.5V) (V DET typ.+0.5V). Note) Please refer to the detection voltage of Line-up table.
Output delay time "L H"
Output delay time "H L"
Ω
V DET Ω
CT Capacitance [µF]
d e l a y t i m e [s ]
CT Capacitance [µF]
d e l a y t i m e [µs ]
Part number and Marking of samples
BD5260PW PV PU PT PS PR PQ PP PN PM 6.0V 5.9V 5.8V 5.7V 5.6V 5.5V 5.4V 5.3V 5.2V 5.1V PB P A MV MU MT MS MR MQ MP MN 4.1V 4.0V 3.9V 3.8V 3.7V 3.6V 3.5V 3.4V 3.3V 3.2V RW RV
RU RT RS RR RQ RN RM RP 6.0V 5.9V 5.8V 5.7V 5.6V 5.5V 5.4V 5.3V BD5241BD5259BD5258BD5257BD5256BD5255BD5254BD5253BD5252BD5251BD5240BD5239BD5238BD5237BD5236BD5235BD5234BD5233BD5232BD5360BD5359BD5358BD5357BD5356BD5355BD5354BD53535.2V 5.1V BD5352BD5351Marking Voltage
Part No.
Marking Voltage
Part No.
Marking Voltage
Part No.
Marking Voltage
Part No.
BD5341RB RA QV QU QT QS QR QQ QP QN 4.1V 4.0V 3.9V 3.8V 3.7V 3.6V 3.5V 3.4V 3.3V 3.2V BD5340BD5339BD5338BD5337BD5336BD5335BD5334BD5333
BD5332BD5250PL PK PJ PH PG PF PE PD PC
5.0V 4.9V 4.8V 4.7V 4.6V 4.5V 4.4V 4.3V 4.2V
MM ML MK MJ MH MG MF ME MD
3.1V 3.0V 2.9V 2.8V 2.7V 2.6V 2.5V 2.4V 2.3V
RL RK RJ
RH RG RF RE RC
RD 5.0V 4.9V 4.8V 4.7V 4.6V 4.5V 4.4V 4.3V BD5231BD5249BD5248BD5247BD5246BD5245BD5244BD5243BD5242
BD5230BD5229BD5228BD5227BD5226BD5225BD5224BD5223
BD5350BD5349BD5348BD5347BD5346BD5345BD5344BD53434.2V
BD5342
BD5331QM QL QK QJ QH QG QF QE QD
3.1V
3.0V 2.9V 2.8V 2.7V 2.6V 2.5V 2.4V 2.3V
BD5330BD5329BD5328BD5327BD5326BD5325BD5324BD5323
Circuit current
"L" output current
"H" output current
I/O characteristic
BD52XXG/BD53XXG : SSOP5 (SMP5C2)
BD52XXFVE/BD53XXFVE : VSOF5 (EMP5)
V DS [V]
I O H
[m A ]
Timing waveform
Detection voltage
V D E T V
V
Ω
V Ω
V V DD [V]
I D D [µA ]
[m A ]
V DS [V]
I O L V DD [V]
V O U T [V ]
Ta [˚C]
[V ]
V DD
V DD
V OUT
V 0V V OH
V OL
V DET +∆V DET
Line-up。
L934YD5V资料
SPEC NO: DSAB5495 APPROVED : J. Lu
REV NO: V.2 CHECKED :Allen Liu
DATE:MAR/15/2003 DRAWN: S.J.HOU
PAGE: 1 OF 3
元器件交易网
Selection Guide
Par t No . Dic e L en s Ty p e Iv (m c d ) V=5V Min . L-934YD-5V YELLOW(GaP) YELLOW DIFFUSED 8 Ty p . 15 V i ew i n g An g l e 2θ1/2 60 °
Note: 1. 2mm below package base.
Yello w 85 6 5 -40°C To +70°C -40°C To +85°C 260°C For 5 Seconds
Un it s mW V V
SPEC NO: DSAB5495 APPROVED : J. Lu
REV NO: V.2 CHECKED :Allen Liu
POWER CONSUMPTION.
! GENERAL ! RELIABLE ! LONG
LIFE - SOLID STATE RELIABILITY.
! AVAILABLE ON TAPE AND REEL. !5V INTERNAL RESISTOR.
Package Dimensions
Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.25(0.01") unless otherwise d. 3. Lead spacing is measured where the lead emerge package. 4. Specifications are subject to change without notice.
BCM5354中文资料
BCM5354中⽂资料OPTIMIZED 802.11G ROUTER WITH BROADRANGE?E N EF I T SThe BCM5354 achieves the lowest cost and highestperformance router system-on-chip (SoC) integration forresidential and small office, home office (SOHO) marketsTime-to-market is significantly reduced through stablekernels, board support packagesTurn-key software is code compatible with other AirForce?routers and access points (APs) enabling seamless migrationO V E R V I EWPhone: 949-450-8700Fax: 949-926-5203E-mail:info@/doc/cff2d6f2fab069dc502201a1.htmlWeb:/doc/cff2d6f2fab069dc502201a1.htmlBROADCOM CORPORATION 16215 Alton Parkway, P.O. Box 57013Irvine, California 92619-70132007 by BROADCOM CORPORATION. All rights reserved.5354-PB00-R01/24/07System Block DiagramThe BCM5354 integrates a high-performance MIPS32 processor, IEEE 802.11 b/g MAC/PHY, 2.4-GHz direct conversion radio, USB 2.0 host controller, SDRAM controller, and a configurable five-port Fast Ethernet (FE) switch.The BCM5354 provides wireless LAN connectivity that supports data rates of up to 125 Mbps that is backward-compatible with standard 802.11 b/g.The BCM5354 supports a WAN connection via its configurable media interfaces. The per-port programmable four-level priority queues enable QoS (IEEE 802.1p) for guaranteed bandwidth applications, DiffServ/TOS, and L2/L3 IGMP snooping. The IEEE 802.1Q VLAN allows flexible implementation of VLAN grouping and WAN port segregation.Applications running on the BCM5354 leverage field-proven software which includes SecureEasySetup? and comprehensive wirelessnetwork security support that comprises WEP/WPA/WPA2 encryption.The BCM5354 offers the industry’s most aggressive home routerintegration and enables the lowest bill of materials (BOM) solution cost.Broadcom’s superior technology and innovation also benefitmanufacturers with faster time-to-market, and end products that are differentiated from the competition through rich features, exceptional range, and outstanding reliability.。
RTD-0524P中文资料
0505
1205
1212
0512
15.000 10.000 5.000 0.000 -5.000 -10.000
0515
1215
2405
2412
0% 20% 40% 60% Total Output current (%) 80% 100%
RTS & RTD Series
2 Watt SMD Single & Dual Output
Input Voltage (VDC) 5, 9, 12, 15, 24 5, 9, 12, 15, 24 5, 9, 12, 15, 24 5, 9, 12, 15, 24 5, 9, 12, 15, 24 5, 9, 12, 15, 24 5, 9, 12, 15, 24 5, 9, 12, 15, 24 5, 9, 12, 15, 24 5, 9, 12, 15, 24
0515
2415
2412
1215
0% 20% 40% 60% Total Output current (%)
80%
100%
0% 20% 40% 60% Total Output current (%)
80%
100%
68
July-2006
元器件交易网
Deviation from Nominal (%)
15.000 10.000 5.000 0.000 -5.000 -10.000
0505
1205
15.000 10.000 5.000 0.000 -5.000 -10.000
0509
1209
2405
2409
0% 20% 40% 60% Total Output current (%)
PBSS5350SS,115;中文规格书,Datasheet资料
103
006aaa811
Zth(j-a) (K/W)
duty cycle =
PBSS5350SS_1
Product data sheet
/
Rev. 01 — 3 April 2007
© NXP B.V. 2007. All rights reserved.
4 of 14
NXP Semiconductors
PBSS5350SS
50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor
PBSS5350SS
50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor
Rev. 01 — 3 April 2007
Product data sheet
1. Product profile
1.1 General description
PNP/PNP double low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package.
Table 1. Product overview Type number Package
NXP PBSS5350SS SOT96-1
Name SO8
NPN/PNP complement
54ACTQ533DMQB资料
54ACTQ533Quiet Series Octal Transparent Latch with TRI-STATE ®OutputsGeneral DescriptionThe ACTQ533consists of eight latches with TRI-STATE out-puts for bus organized system applications.The flip-flops ap-pear transparent to the data when Latch Enable (LE)is HIGH.When LE is low,the data satisfying the input timing re-quirements is latched.Data appears on the bus when the Output Enable (OE)is LOW.When OE is HIGH,the bus out-put is in the high impedance state.The ACTQ533utilizes NSC Quiet Series technology to guar-antee quiet output switching and improve dynamic threshold performance.FACT Quiet Series ™features GTO ™output control and undershoot corrector in addition to a split ground bus for superior performance.Featuresn I CC and I OZ reduced by 50%n Guaranteed simultaneous switching noise level and dynamic threshold performance n Improved latch up immunityn Eight latches in a single packagen TRI-STATE outputs drive bus lines or buffer memory address registersn Outputs source/sink 24mAn Inverted version of the ACTQ373n 4kV minimum ESD immunityLogic SymbolsPin Names DescriptionD 0–D 7Data Inputs LE Latch Enable Input OE Output Enable Input O 0–O 7TRI-STATE Latch OutputsGTO ™is a trademark of National Semiconductor Corporation.TRI-STATE ®is a registered trademark of National Semiconductor Corporation.FACT ®is a registered trademark of Fairchild Semiconductor Corporation.FACT Quiet Series ™is a trademark of Fairchild Semiconductor Corporation.DS100241-1IEEE/IECDS100241-2August 199854ACTQ533Quiet Series Octal Transparent Latch with TRI-STATE Outputs©1998National Semiconductor Corporation Connection DiagramsFunctional DescriptionThe ACTQ533contains eight D-type latches with TRI-STATE standard outputs.When the Latch Enable (LE)input is HIGH,data on the D n inputs enters the latches.In this con-dition the latches are transparent,i.e.,a latch output will change state each time its D input changes.When LE is LOW,the latches store the information that was present on the D inputs a setup time preceding the HIGH-to-LOW tran-sition of LE.The TRI-STATE standard outputs are controlled by the Output Enable (OE)input.When OE is LOW,the stan-dard outputs are in the 2-state mode.When OE is HIGH,the standard outputs are in the high impedance mode but this does not interfere with entering new data into the latches.Truth TableInputsOutputs LE OE D n O n X H X Z H L L H H L H L LLXO 0H =HIGH Voltage Level L =LOW Voltage Level Z =High Impedance X =ImmaterialO 0=Previous O 0before HIGH to Low transition of Latch EnableLogic DiagramPin Assignment for DIP and FlatpakDS100241-3Pin Assignmentfor LCCDS100241-4DS100241-5Please note that this diagram is provided only for the understanding of logic operations and should not be used to estimate propagation delays. 2Absolute Maximum Ratings(Note1)If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications.Supply Voltage(V CC)−0.5V to+7.0V DC Input Diode Current(I IK)V I=−0.5V−20mA V I=V CC+0.5V+20mA DC Input Voltage(V I)−0.5V to V CC+0.5V DC Output Diode Current(I OK)V O=−0.5V−20mA V O=V CC+0.5V+20mA DC Output Voltage(V O)−0.5V to V CC+0.5V DC Output Sourceor Sink Current(I O)±50mA DC V CC or Ground Currentper Output Pin(I CC or I GND)±50mA Storage Temperature(T STG)−65˚C to+150˚C DC Latchup Sourceor Sink Current±300mA Junction Temperature(T J)CDIP175˚C Recommended Operating ConditionsSupply Voltage(V CC)’ACTQ 4.5V to5.5V Input Voltage(V I)0V to V CC Output Voltage(V O)0V to V CC Operating Temperature(T A)54ACTQ−55˚C to+125˚C Minimum Input Edge Rate∆V/∆t’ACTQ DevicesV IN from0.8V to2.0VV CC@4.5V,5.5V125mV/ns Note1:Absolute maximum ratings are those values beyond which damage to the device may occur.The databook specifications should be met,without exception,to ensure that the system design is reliable over its power supply, temperature,and output/input loading variables.National does not recom-mend operation of FACT®circuits outside databook specifications.Note2:All commercial packaging is not recommended for applications re-quiring greater than2000temperature cycles from−40˚C to+125˚C.DC Characteristics for’ACTQ Family Devices54ACTQSymbol Parameter V CC T A=Units Conditions(V)−55˚C to+125˚CGuaranteedLimitsV IH Minimum High Level 4.5 2.0V V OUT=0.1V Input Voltage 5.5 2.0or V CC−0.1VV IL Maximum Low Level 4.50.8V V OUT=0.1V Input Voltage 5.50.8or V CC−0.1VV OH Minimum High Level 4.5 4.4V I OUT=−50µA Output Voltage 5.5 5.4(Note3)V IN=V IL or V IH4.5 3.70V I OH=−24mA5.5 4.70I OH=−24mAV OL Maximum Low Level 4.50.1V I OUT=50µA Output Voltage 5.50.1(Note3)V IN=V IL or V IH4.50.50V I OL=24mA5.50.50I OL=24mAI IN Maximum Input LeakageCurrent5.5±1.0µA V I=V CC,GNDI OZ Maximum TRI-STATE 5.5±5.0µA V I=V IL,V IHLeakage Current V O=V CC,GNDI CCT Maximum 5.5 1.6mA V I=V CC−2.1VI CC/InputDC Characteristics for’ACTQ Family Devices(Continued)54ACTQSymbol Parameter V CC T A=Units Conditions(V)−55˚C to+125˚CGuaranteedLimitsI OLD Minimum Dynamic 5.550mA V OLD=1.65V MaxI OHD Output Current5.5−50mA V OHD=3.85V Min(Note4)I CC Maximum Quiescent 5.580.0µA V IN=V CCSupply Current or GND(Note5) V OLP Quiet Output 5.0 1.7V(Notes6,7) Maximum Dynamic V OLV OLV Quiet Output 5.0−1.2V(Notes6,7) Minimum Dynamic V OLNote3:All outputs loaded;thresholds on input associated with output under test.Note4:Maximum test duration2.0ms,one output loaded at a time.Note5:I CC for54ACTQ@25˚C is identical to74ACQ@25˚C.Note6:Plastic DIP package.Note7:Max number of outputs defined as(n).Data inputs are driven0V to3V.One output@GND.AC Electrical Characteristics54ACTQV CC T A=−55˚C Fig.Symbol Parameter(V)to+125˚C Units No.(Note8)C L=50pFMin Maxt PHL,t PLH Propagation Delay 5.0 1.59.0nsD n to O nt PHL,t PLH Propagation Delay 5.0 1.510.5nsLE to O nt PZL,t PZH Output Enable Time 5.0 1.510.5nst PHZ,t PLZ Output Disable Time 5.0 1.510.5nsNote8:Voltage Range5.0is5.0V±0.5V.Note9:Skew is defined as the absolute value of the difference between the actual propagation delay for any two separate outputs of the same device.The speci-fication applies to any outputs switching in the same direction,either HIGH to LOW(t OSHL)or LOW to HIGH(t OSLH).Parameter guaranteed by design.AC Operating Requirements54ACTQV CC T A=−55˚C Fig.Symbol Parameter(V)to+125˚C Units No.(Note10)C L=50pFGuaranteedMinimumt S Setup Time,HIGH or LOW 5.0 3.0nsD n to LEt H Hold Time,HIGH or LOW 5.0 1.5nsD n to LEt W LE Pulse Width,HIGH 5.0 5.0nsNote10:Voltage Range5.0is5.0V±0.5V.4CapacitanceSymbol Parameter Typ Units ConditionsC IN Input Capacitance 4.5pF V CC=OPENC PD Power Dissipation40pF V CC=5.0VCapacitance6Physical Dimensions inches(millimeters)unless otherwise noted20-Terminal Ceramic Leadless Chip Carrier(L)NS Package Number E20A20-Lead Ceramic Dual-In-Line Package(D)NS Package Number J20APhysical Dimensions inches(millimeters)unless otherwise noted(Continued)LIFE SUPPORT POLICYNATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DE-VICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMI-CONDUCTOR CORPORATION.As used herein:1.Life support devices or systems are devices or sys-tems which,(a)are intended for surgical implant intothe body,or(b)support or sustain life,and whose fail-ure to perform when properly used in accordancewith instructions for use provided in the labeling,canbe reasonably expected to result in a significant injuryto the user.2.A critical component in any component of a life supportdevice or system whose failure to perform can be rea-sonably expected to cause the failure of the life supportdevice or system,or to affect its safety or effectiveness.National SemiconductorCorporationAmericasTel:1-800-272-9959Fax:1-800-737-7018Email:support@National SemiconductorEuropeFax:+49(0)180-5308586Email:europe.support@Deutsch Tel:+49(0)180-5308585English Tel:+49(0)180-5327832Français Tel:+49(0)180-5329358Italiano Tel:+49(0)180-5341680National SemiconductorAsia Pacific CustomerResponse GroupTel:65-2544466Fax:65-2504466Email:sea.support@National SemiconductorJapan Ltd.Tel:81-3-5620-6175Fax:81-3-5620-617920-Lead Ceramic Flatpak(F)NS Package Number W20A54ACTQ533QuietSeriesOctalTransparentLatchwithTRI-STATEOutputsNational does not assume any responsibility for use of any circuitry described,no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.。
BD5332中文资料
BD52XXG/FVE series BD53XXG/FVE seriesHigh-accuracy detection voltage Low current consumptionDescriptionFeaturesApplications VOL T AGE DETECTOR IC with adjustable delay timeBD52XXG/FVE, BD53XXG/FVE are series of high-accuracy detection voltage and low current consumption VOLTAGE DETECTOR ICs adopting CMOS process.New lineup of 152 types with delay time circuit have developed in addition to well-reputed 152 types of VOLTAGE DETECTOR ICs.Any delay time can be established by using small capacitor due to high-resistance process technology.Total 152 types of VOLTAGE DETECTOR ICs includingBD52XXG/FVE series (Nch open drain output) and BD53XXG/FVE series (CMOS output), each of which has 38 kinds in every 0.1V step (2.3~6.0V) have developed.1) Detection voltage: 0.1V step line-up 2.3~6.0V (Typ.)2) High-accuracy detection voltage:±1.5% (Max.)3) Ultra low current consumption: 0.95µA (Typ.)4) Nch open drain output (BD52XXG/FVE series), CMOS output (BD53XXG/FVE series)5) Small VSOF5(EMP5), SSOP5(SMP5C2) packageEvery kind of appliances with microcontroller and logic circuit BD52XXG/FVEBD53XXG/FVEPin No.SSOP5(SMP5C2)VSOF5(EMP5)Vout VoutV DD V DDGND GNDNC.CT SUBCT12345 Application CircuitAbsolute Maximum Ratings (Ta=25˚C)Characteristic diagram and Measurement circuitElectrical characteristics (Unless otherwise noted; Ta=-25~85˚C)1 ˚C ˚C *2 Derating: 2.1mW/˚C for operation above Ta=25˚C .(Mounted on a 70.0mmX70.0mmX16mm glass epoxy PCB.)*2 T PLH : V DD =(V DET typ.–0.5V) (V DET typ.+0.5V). Note) Please refer to the detection voltage of Line-up table.Output delay time "L H"Output delay time "H L"ΩV DET ΩCT Capacitance [µF]d e l a y t i m e [s ]CT Capacitance [µF]d e l a y t i m e [µs ]Part number and Marking of samplesBD5260PW PV PU PT PS PR PQ PP PN PM 6.0V 5.9V 5.8V 5.7V 5.6V 5.5V 5.4V 5.3V 5.2V 5.1V PB P A MV MU MT MS MR MQ MP MN 4.1V 4.0V 3.9V 3.8V 3.7V 3.6V 3.5V 3.4V 3.3V 3.2V RW RVRU RT RS RR RQ RN RM RP 6.0V 5.9V 5.8V 5.7V 5.6V 5.5V 5.4V 5.3V BD5241BD5259BD5258BD5257BD5256BD5255BD5254BD5253BD5252BD5251BD5240BD5239BD5238BD5237BD5236BD5235BD5234BD5233BD5232BD5360BD5359BD5358BD5357BD5356BD5355BD5354BD53535.2V 5.1V BD5352BD5351Marking VoltagePart No.Marking VoltagePart No.Marking VoltagePart No.Marking VoltagePart No.BD5341RB RA QV QU QT QS QR QQ QP QN 4.1V 4.0V 3.9V 3.8V 3.7V 3.6V 3.5V 3.4V 3.3V 3.2V BD5340BD5339BD5338BD5337BD5336BD5335BD5334BD5333BD5332BD5250PL PK PJ PH PG PF PE PD PC5.0V 4.9V 4.8V 4.7V 4.6V 4.5V 4.4V 4.3V 4.2VMM ML MK MJ MH MG MF ME MD3.1V 3.0V 2.9V 2.8V 2.7V 2.6V 2.5V 2.4V 2.3VRL RK RJRH RG RF RE RCRD 5.0V 4.9V 4.8V 4.7V 4.6V 4.5V 4.4V 4.3V BD5231BD5249BD5248BD5247BD5246BD5245BD5244BD5243BD5242BD5230BD5229BD5228BD5227BD5226BD5225BD5224BD5223BD5350BD5349BD5348BD5347BD5346BD5345BD5344BD53434.2VBD5342BD5331QM QL QK QJ QH QG QF QE QD3.1V3.0V 2.9V 2.8V 2.7V 2.6V 2.5V 2.4V 2.3VBD5330BD5329BD5328BD5327BD5326BD5325BD5324BD5323Circuit current"L" output current"H" output currentI/O characteristicBD52XXG/BD53XXG : SSOP5 (SMP5C2)BD52XXFVE/BD53XXFVE : VSOF5 (EMP5)V DS [V]I O H[m A ]Timing waveformDetection voltageV D E T VVΩV ΩV V DD [V]I D D [µA ][m A ]V DS [V]I O L V DD [V]V O U T [V ]Ta [˚C][V ]V DDV DDV OUTV 0V V OHV OLV DET +∆V DETLine-up。
BD543资料
BD543, BD543A, BD543B, BD543C NPN SILICON POWER TRANSISTORS2JUNE 1973 - REVISED MARCH 1997P R O D U C T I N F O R M A T I O NNOTES:4.These parameters must be measured using pulse techniques, t p = 300 µs, duty cycle ≤ 2%.5.These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.†Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.electrical characteristics at 25°C case temperaturePARAMETER TEST CONDITIONSMIN TYPMAXUNITV (BR)CEOCollector-emitter breakdown voltageI C = 30 mA (see Note 4)I B = 0BD543BD543A BD543B BD543C 406080100VI CESCollector-emitter cut-off current V CE = 40 VV CE = 60 V V CE = 80 V V CE =100 VV BE =0V BE =0V BE =0V BE =0BD543BD543A BD543B BD543C 0.40.40.40.4mA I CEO Collector cut-off current V CE = 30 V V CE = 60 V I B =0I B =0BD543/543A BD543B/543C0.70.7mA I EBOEmitter cut-off current V EB = 5 V I C =01mA h FEForward current transfer ratio V CE = 4 V V CE = 4 V V CE = 4 V I C = 1 A I C = 3A I C = 5A (see Notes 4 and 5)604015V CE(sat)Collector-emitter saturation voltage I B = 0.3 A I B = 1 A I B = 1.6 A I C = 3A I C = 5A I C = 8A (see Notes 4 and 5)0.50.51VV BE Base-emitter voltageV CE = 4 V I C = 5 A (see Notes 4 and 5) 1.4V h feSmall signal forward current transfer ratio V CE = 10 V I C =0.5A f = 1 kHz 20|h fe |Small signal forward current transfer ratioV CE = 10 VI C =0.5Af = 1 MHz3thermal characteristicsPARAMETERMINTYPMAX UNIT R θJC Junction to case thermal resistance 1.79°C/W R θJAJunction to free air thermal resistance62.5°C/Wresistive-load-switching characteristics at 25°C case temperaturePARAMETERTEST CONDITIONS †MIN TYP MAX UNIT t on T urn-on time I C = 6 A V BE(off) = -4 VI B(on) = 0.6 A R L = 5 ΩI B(off) = -0.6 A t p = 20 µs, dc ≤ 2%0.6µs t offT urn-off time1µs3BD543, BD543A, BD543B, BD543C NPN SILICON POWER TRANSISTORS4JUNE 1973 - REVISED MARCH 1997P R O D U C T I N F O R M A T I O NMAXIMUM SAFE OPERATING REGIONSTHERMAL INFORMATION5BD543, BD543A, BD543B, BD543C NPN SILICON POWER TRANSISTORS6JUNE 1973 - REVISED MARCH 1997P R O D U C T I N F O R M A T I O NIMPORTANT NOTICEPower Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current.PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements.PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,machine, or process in which such semiconductor products or services might be or are used.PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUIT ABLE FOR USE IN LIFE-SUPPORT APPLICA TIONS, DEVICES OR SYSTEMS.Copyright © 1997, Power Innovations Limited。
BD5334中文资料
BD52XXG/FVE series BD53XXG/FVE seriesHigh-accuracy detection voltage Low current consumptionDescriptionFeaturesApplications VOL T AGE DETECTOR IC with adjustable delay timeBD52XXG/FVE, BD53XXG/FVE are series of high-accuracy detection voltage and low current consumption VOLTAGE DETECTOR ICs adopting CMOS process.New lineup of 152 types with delay time circuit have developed in addition to well-reputed 152 types of VOLTAGE DETECTOR ICs.Any delay time can be established by using small capacitor due to high-resistance process technology.Total 152 types of VOLTAGE DETECTOR ICs includingBD52XXG/FVE series (Nch open drain output) and BD53XXG/FVE series (CMOS output), each of which has 38 kinds in every 0.1V step (2.3~6.0V) have developed.1) Detection voltage: 0.1V step line-up 2.3~6.0V (Typ.)2) High-accuracy detection voltage:±1.5% (Max.)3) Ultra low current consumption: 0.95µA (Typ.)4) Nch open drain output (BD52XXG/FVE series), CMOS output (BD53XXG/FVE series)5) Small VSOF5(EMP5), SSOP5(SMP5C2) packageEvery kind of appliances with microcontroller and logic circuit BD52XXG/FVEBD53XXG/FVEPin No.SSOP5(SMP5C2)VSOF5(EMP5)Vout VoutV DD V DDGND GNDNC.CT SUBCT12345 Application CircuitAbsolute Maximum Ratings (Ta=25˚C)Characteristic diagram and Measurement circuitElectrical characteristics (Unless otherwise noted; Ta=-25~85˚C)1 ˚C ˚C *2 Derating: 2.1mW/˚C for operation above Ta=25˚C .(Mounted on a 70.0mmX70.0mmX16mm glass epoxy PCB.)*2 T PLH : V DD =(V DET typ.–0.5V) (V DET typ.+0.5V). Note) Please refer to the detection voltage of Line-up table.Output delay time "L H"Output delay time "H L"ΩV DET ΩCT Capacitance [µF]d e l a y t i m e [s ]CT Capacitance [µF]d e l a y t i m e [µs ]Part number and Marking of samplesBD5260PW PV PU PT PS PR PQ PP PN PM 6.0V 5.9V 5.8V 5.7V 5.6V 5.5V 5.4V 5.3V 5.2V 5.1V PB P A MV MU MT MS MR MQ MP MN 4.1V 4.0V 3.9V 3.8V 3.7V 3.6V 3.5V 3.4V 3.3V 3.2V RW RVRU RT RS RR RQ RN RM RP 6.0V 5.9V 5.8V 5.7V 5.6V 5.5V 5.4V 5.3V BD5241BD5259BD5258BD5257BD5256BD5255BD5254BD5253BD5252BD5251BD5240BD5239BD5238BD5237BD5236BD5235BD5234BD5233BD5232BD5360BD5359BD5358BD5357BD5356BD5355BD5354BD53535.2V 5.1V BD5352BD5351Marking VoltagePart No.Marking VoltagePart No.Marking VoltagePart No.Marking VoltagePart No.BD5341RB RA QV QU QT QS QR QQ QP QN 4.1V 4.0V 3.9V 3.8V 3.7V 3.6V 3.5V 3.4V 3.3V 3.2V BD5340BD5339BD5338BD5337BD5336BD5335BD5334BD5333BD5332BD5250PL PK PJ PH PG PF PE PD PC5.0V 4.9V 4.8V 4.7V 4.6V 4.5V 4.4V 4.3V 4.2VMM ML MK MJ MH MG MF ME MD3.1V 3.0V 2.9V 2.8V 2.7V 2.6V 2.5V 2.4V 2.3VRL RK RJRH RG RF RE RCRD 5.0V 4.9V 4.8V 4.7V 4.6V 4.5V 4.4V 4.3V BD5231BD5249BD5248BD5247BD5246BD5245BD5244BD5243BD5242BD5230BD5229BD5228BD5227BD5226BD5225BD5224BD5223BD5350BD5349BD5348BD5347BD5346BD5345BD5344BD53434.2VBD5342BD5331QM QL QK QJ QH QG QF QE QD3.1V3.0V 2.9V 2.8V 2.7V 2.6V 2.5V 2.4V 2.3VBD5330BD5329BD5328BD5327BD5326BD5325BD5324BD5323Circuit current"L" output current"H" output currentI/O characteristicBD52XXG/BD53XXG : SSOP5 (SMP5C2)BD52XXFVE/BD53XXFVE : VSOF5 (EMP5)V DS [V]I O H[m A ]Timing waveformDetection voltageV D E T VVΩV ΩV V DD [V]I D D [µA ][m A ]V DS [V]I O L V DD [V]V O U T [V ]Ta [˚C][V ]V DDV DDV OUTV 0V V OHV OLV DET +∆V DETLine-up。
SN74AC533DBRG4中文资料
PACKAGING INFORMATIONOrderable Device Status (1)Package Type Package Drawing Pins Package Qty Eco Plan (2)Lead/Ball FinishMSL Peak Temp (3)SN74AC533DBLE OBSOLETE SSOP DB 20TBDCall TI Call TISN74AC533DBR ACTIVE SSOP DB 202000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM SN74AC533DBRE4ACTIVE SSOP DB 202000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM SN74AC533DBRG4ACTIVE SSOP DB 202000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM SN74AC533DWACTIVE SOIC DW 2025Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM SN74AC533DWG4ACTIVE SOIC DW 2025Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM SN74AC533DWR ACTIVE SOIC DW 202000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM SN74AC533DWRE4ACTIVE SOIC DW 202000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM SN74AC533DWRG4ACTIVE SOIC DW 202000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM SN74AC533N ACTIVE PDIP N 2020Pb-Free (RoHS)CU NIPDAU N /A for Pkg Type SN74AC533NE4ACTIVE PDIP N 2020Pb-Free (RoHS)CU NIPDAU N /A for Pkg Type SN74AC533NSR ACTIVE SO NS 202000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM SN74AC533NSRE4ACTIVE SO NS 202000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM SN74AC533NSRG4ACTIVE SO NS 202000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM SN74AC533PW ACTIVE TSSOP PW 2070Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM SN74AC533PWE4ACTIVE TSSOP PW 2070Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM SN74AC533PWG4ACTIVE TSSOP PW 2070Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM SN74AC533PWLE OBSOLETE TSSOP PW 20TBDCall TI Call TISN74AC533PWR ACTIVE TSSOP PW 202000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM SN74AC533PWRE4ACTIVE TSSOP PW 202000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM SN74AC533PWRG4ACTIVETSSOPPW202000Green (RoHS &no Sb/Br)CU NIPDAULevel-1-260C-UNLIM(1)The marketing status values are defined as follows:ACTIVE:Product device recommended for new designs.LIFEBUY:TI has announced that the device will be discontinued,and a lifetime-buy period is in effect.NRND:Not recommended for new designs.Device is in production to support existing customers,but TI does not recommend using this part in a new design.PREVIEW:Device has been announced but is not in production.Samples may or may not be available.OBSOLETE:TI has discontinued the production of the device.(2)Eco Plan -The planned eco-friendly classification:Pb-Free (RoHS),Pb-Free (RoHS Exempt),or Green (RoHS &no Sb/Br)-please check /productcontent for the latest availability information and additional product content details.4-Jun-2007TBD:The Pb-Free/Green conversion plan has not been defined.Pb-Free (RoHS):TI's terms "Lead-Free"or "Pb-Free"mean semiconductor products that are compatible with the current RoHS requirements for all 6substances,including the requirement that lead not exceed 0.1%by weight in homogeneous materials.Where designed to be soldered at high temperatures,TI Pb-Free products are suitable for use in specified lead-free processes.Pb-Free (RoHS Exempt):This component has a RoHS exemption for either 1)lead-based flip-chip solder bumps used between the die and package,or 2)lead-based die adhesive used between the die and leadframe.The component is otherwise considered Pb-Free (RoHS compatible)as defined above.Green (RoHS &no Sb/Br):TI defines "Green"to mean Pb-Free (RoHS compatible),and free of Bromine (Br)and Antimony (Sb)based flame retardants (Br or Sb do not exceed 0.1%by weight in homogeneous material)(3)MSL,Peak Temp.--The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications,and peak solder temperature.Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided.TI bases its knowledge and belief on information provided by third parties,and makes no representation or warranty as to the accuracy of such information.Efforts are underway to better integrate information from third parties.TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.TI and TI suppliers consider certain information to be proprietary,and thus CAS numbers and other limited information may not be available for release.In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s)at issue in this document sold by TI to Customer on an annualbasis.4-Jun-2007TAPE AND REELINFORMATION19-May-2007DevicePackage Pins SiteReel Diameter (mm)Reel Width (mm)A0(mm)B0(mm)K0(mm)P1(mm)W (mm)Pin1Quadrant SN74AC533DBR DB 20MLA 330168.27.5 2.51216Q1SN74AC533DWR DW 20MLA 3302410.813.0 2.71224Q1SN74AC533NSRNS 20MLA 330248.213.0 2.51224Q1SN74AC533PWRPW20MLA330166.957.11.6816Q1TAPE AND REEL BOX INFORMATIONDevice Package Pins Site Length (mm)Width (mm)Height (mm)SN74AC533DBR DB 20MLA 342.9336.628.58SN74AC533DWR DW 20MLA 333.2333.231.75SN74AC533NSR NS 20MLA 333.2333.231.75SN74AC533PWRPW20MLA342.9336.628.5819-May-200719-May-2007IMPORTANT NOTICETexas Instruments Incorporated and its subsidiaries(TI)reserve the right to make corrections,modifications,enhancements, improvements,and other changes to its products and services at any time and to discontinue any product or service without notice. Customers should obtain the latest relevant information before placing orders and should verify that such information is current and complete.All products are sold subject to TI’s terms and conditions of sale supplied at the time of order acknowledgment.TI warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with TI’s standard warranty.Testing and other quality control techniques are used to the extent TI deems necessary to support this warranty.Except where mandated by government requirements,testing of all parameters of each product is not necessarily performed.TI assumes no liability for applications assistance or customer product design.Customers are responsible for their products and applications using TI components.To minimize the risks associated with customer products and applications,customers should provide adequate design and operating safeguards.TI does not warrant or represent that any license,either express or implied,is granted under any TI patent right,copyright,mask work right,or other TI intellectual property right relating to any combination,machine,or process in which TI products or services are rmation published by TI regarding third-party products or services does not constitute a license from TI to use such products or services or a warranty or endorsement e of such information may require a license from a third party under the patents or other intellectual property of the third party,or a license from TI under the patents or other intellectual property of TI. Reproduction of TI information in TI data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties,conditions,limitations,and notices.Reproduction of this information with alteration is an unfair and deceptive business practice.TI is not responsible or liable for such altered rmation of third parties may be subject to additional restrictions.Resale of TI products or services with statements different from or beyond the parameters stated by TI for that product or service voids all express and any implied warranties for the associated TI product or service and is an unfair and deceptive business practice.TI is not responsible or liable for any such statements.TI products are not authorized for use in safety-critical applications(such as life support)where a failure of the TI product would reasonably be expected to cause severe personal injury or death,unless officers of the parties have executed an agreement specifically governing such use.Buyers represent that they have all necessary expertise in the safety and regulatory ramifications of their applications,and acknowledge and agree that they are solely responsible for all legal,regulatory and safety-related requirements concerning their products and any use of TI products in such safety-critical applications,notwithstanding any applications-related information or support that may be provided by TI.Further,Buyers must fully indemnify TI and its representatives against any damages arising out of the use of TI products in such safety-critical applications.TI products are neither designed nor intended for use in military/aerospace applications or environments unless the TI products are specifically designated by TI as military-grade or"enhanced plastic."Only products designated by TI as military-grade meet military specifications.Buyers acknowledge and agree that any such use of TI products which TI has not designated as military-grade is solely at the Buyer's risk,and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use.TI products are neither designed nor intended for use in automotive applications or environments unless the specific TI products are designated by TI as compliant with ISO/TS16949requirements.Buyers acknowledge and agree that,if they use anynon-designated products in automotive applications,TI will not be responsible for any failure to meet such requirements. Following are URLs where you can obtain information on other Texas Instruments products and application solutions:Products ApplicationsAmplifiers Audio /audioData Converters Automotive /automotiveDSP Broadband /broadbandInterface Digital Control /digitalcontrolLogic Military /militaryPower Mgmt Optical Networking /opticalnetworkMicrocontrollers Security /securityRFID Telephony /telephonyLow Power /lpw Video&Imaging /videoWirelessWireless /wirelessMailing Address:Texas Instruments,Post Office Box655303,Dallas,Texas75265Copyright©2007,Texas Instruments Incorporated。
BDX54中文资料
BDX54, BDX54A, BDX54B, BDX54C PNP SILICON POWER DARLINGTONS2MAY 1989 - REVISED MARCH 1997P R O D U C T I N F O R M A T I O NNOTES:3.These parameters must be measured using pulse techniques, t p = 300 µs, duty cycle ≤ 2%.4.These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.†Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.electrical characteristics at 25°C case temperature (unless otherwise noted)PARAMETER TEST CONDITIONSMIN TYPMAXUNITV (BR)CEOCollector-emitter breakdown voltageI C = -100 mA I B = 0(see Note 3)BDX54BDX54A BDX54B BDX54C -45-60-80-100VI CEOCollector-emitter cut-off currentV CE = -30 VV CE = -30 V V CE = -40 V V CE = -50 V I B =0I B =0I B =0I B =0BDX54BDX54A BDX54B BDX54C -0.5-0.5-0.5-0.5mA I CBOCollector cut-off current V CB = -45 VV CB = -60 V V CB = -80 V V CB = -100 VI E =0I E =0I E =0I E =0BDX54BDX54A BDX54B BDX54C-0.2-0.2-0.2-0.2mA I EBO Emitter cut-off current V EB = -5 V I C =0-2mA h FE Forward current transfer ratio V CE = -3 V I C =-3 A (see Notes 3 and 4)750V BE(sat)Base-emitter saturation voltage I B = -12 mA I C =-3 A (see Notes 3 and 4)-2.5V V CE(sat)Collector-emitter saturation voltage I B = -12 mA I C = -3 A (see Notes 3 and 4)-2V V ECParallel diode forward voltageI E = -3 AI B = 0-2.5Vthermal characteristicsPARAMETERMINTYPMAX UNIT R θJC Junction to case thermal resistance 2.08°C/W R θJAJunction to free air thermal resistance62.5°C/Wresistive-load-switching characteristics at 25°C case temperaturePARAMETERTEST CONDITIONS †MIN TYP MAX UNIT t on T urn-on time I C = -3 A V BE(off) = 4.2 VI B(on) = -12 mA R L = 10 ΩI B(off) = 12 mA t p = 20 µs, dc ≤ 2%1µs t offT urn-off time5µs3BDX54, BDX54A, BDX54B, BDX54C PNP SILICON POWER DARLINGTONS4MAY 1989 - REVISED MARCH 1997P R O D U C T I N F O R M A T I O NMAXIMUM SAFE OPERATING REGIONSTHERMAL INFORMATION5BDX54, BDX54A, BDX54B, BDX54C PNP SILICON POWER DARLINGTONS6MAY 1989 - REVISED MARCH 1997P R O D U C T I N F O R M A T I O NIMPORTANT NOTICEPower Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current.PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements.PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,machine, or process in which such semiconductor products or services might be or are used.PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUIT ABLE FOR USE IN LIFE-SUPPORT APPLICA TIONS, DEVICES OR SYSTEMS.Copyright © 1997, Power Innovations Limited。