1N6299C中文资料
正泰电器低压电器选型手册
3600
3600
3600
3600
3600
3600
3600
3600
3600
3600
电寿命 AC-3
100
100
100
100
80
80
60
60
60
60
(万次) AC-4
20
20
20
20
20
15
15
15
10
10
机械寿命(万次)
1000
1000
1000
1000
800
800
800
800
600
600
配用熔断器型号
9
12
3.5
5
18
25
32
7.7
8.5
12
40
50
65
18.5
24
28
80
95
37
44
电流 (A)
690V
AC-3 AC-46.68.9 Nhomakorabea12
18
21
34
1.5
2
3.8
4.4
7.5
9
39
42
12
14
49 17.3
49 21.3
约定自由空气发热电流(A)
20
20
32
40
50
60
80
80
95
95
额定绝缘电压(V)
5.3 接触器本体在32A及以下有一对常开或常闭辅助触头，40A及以上三极产品有一对常开和常闭辅助 触头。另外可在顶部加装F4辅助触头组(两组或四组)或空气延时头，两侧加装NCF1-11C各一个 (NC1-40Z~95Z除外)，其组合情况分别见表5和表6。
25136中文资料
CHOOSE XTRA•GUARD® 2 FOR:
s s
s s
s
s s
Now Rated To 90°C! Unmatched Resistance to Oils, Fuels, Solvents, and Water Twice the Tensile Strength of PVC Three Times the Tear and Abrasion Resistance of PVC Superior Low-Temperature Flexibility to -20° C Ultraviolet Light Stability (jacket color black) SUPRASHIELD® - Twice as Effective as Foil Shielding
24 AWG (0,23mm2), 7/32 (7x0,20mm), Insulation Thickness: 0.010" (0,25mm) Jacket Thickness Nominal Diameter Part No. No. of Pairs. Inches mm Inches mm
25271 25272 25273 25274 25275 25276 25279 25279/11 25279/15 25279/19 1 2 3 4 5 6 9 11 15 19 0.032 0.032 0.032 0.032 0.032 0.032 0.032 0.032 0.032 0.032 0,81 0,81 0,81 0,81 0,81 0,81 0,81 0,81 0,81 0,81 0.18 0.23 0.25 0.28 0.30 0.31 0.36 0.38 0.43 0.46 4,6 5,8 6,5 7,0 7,5 8,0 9,1 9,7 10,8 11,8
铜合金材料对照
铜合金牌号以及对照列表
材料化学成分
铸造铜的机械性能和应用
铸造锡青铜的化学成分( GB/T1176-1987 )
铸造锡青铜的力学性能( GB/T1176-1987 )
铸造锡青铜的主要特性和应用举例( GB/T1176-1987 )
铸造铝青铜的化学成分( GB/T1176-1987 )
铸造铝青铜的力学性能( GB/T1176-1987 )
铅青铜的化学成分( GB/T1176-1987 )
铸造铅青铜的力学性能( GB/T1176-1987 )
铸造铅青铜的主要特性和应用举例( GB/T1176-1987 )
铸造黄铜的化学成分( GB/T1176-1987 )
铸造铅青铜的力学性能( GB/T1176-1987 )
铸造黄铜的化学成分( GB/T1176-1987 )
铸造黄铜的力学性能( GB/T1176-1987 )
铸造黄铜的化学成分( GB/T1176-1987 )
铸造黄铜的力学性能( GB/T1176-1987 )
铸造黄铜的主要特性和应用举例( GB/T1176-1987 )。
S360-C产品介绍
1、产品理论模型、特点及开发思路2、产品物理性能指标人造石墨前驱体（软碳）纳米“造孔剂”生长“诱导添加剂”高性能人造石墨材料人造石墨前驱体“超临界高温石墨化技术” 晶体结构重排，结晶性趋于完美，石墨化度大幅提升“3300度”S360-C“晶体生长诱导技术” 晶核成形，晶体规则生长晶核生长中间态1.2 S360-C “诱导添加剂”“纳米造孔剂”S360-C 粉体电导率比3HE MAGD 略高，比其他样品低。
200300400500600电导率（压实密度（g/cc）常规测试条件：日本三菱化学产MCP-PD51型四探针粉末电阻率测试仪常规测试条件：☐ 物料配比：G ：CMC:SBR=96.5:1.5:2.0 ☐ 反弹时间：16 h ☐ 电解液用量：100uL分析：S360-C 吸液时间最短，吸液最快。
0200400600800吸液时间（压实密度（g/cc）分析：S360-C比容量≥360 mAh/g；首效≥94%。
电池型号:383450P 正极材料:中信国安C3000-C3.2.1 材料压实性能S360-C材料极片压实性能接近天然石墨水平，极片压实1.70g/cc时外观良好。
3.2.2 S360-C材料压实扫描电镜图S360-C材料极片压实1.70g/cc时孔隙度较好。
3.2.3 材料剥离强度S360-C剥离强>1mN/mm，处于中上等水准。
3.2.4材料极片吸液性能S360-C材料吸液性能好于天然石墨系列。
3.2.5材料极片反弹S360-C材料极片反弹小。
S360-C材料容量、首效在以上样品系列中最优；电解液组份为EC/EMC/DEC，添加剂组分为VC、PC、PS和FEC，电导率为7.5。
电解液组份为EC/EMC/DEC，添加剂组分为VC、PC、PS和FEC，电导率为7.5。
S360-C材料保持了人造石墨的特有性能，高温贮存容量保持与恢复性能良好，厚度变化小。
S360-C材料循环性能良好，500周循环容量保持率90%以上。
公差配合查询表
h8 h9
H10 b9 c9 d9
［註］＊接合將根據尺寸分類之不同而有些例外。
2.1 ੬ٙ͜ൿਿટΥ
ၡટΥ
p6＊
p6＊
r6＊ s6 t6 u6 x6
ਿൿ
ᐻქટΥ
ˆʘʮࢨഃॴᇍఖ ʕගટΥ
h5
H6 JS6 K6 M6 N6＊
h6
F6 G6 H6 JS6 K6 M6 N6 F7 G7 H7 JS7 K7 M7 N7
精密控制閥棍
輪緣與輪轂的接合 精密齒輪機構之齒輪接合
෦
c ʕɝ c
h5 h6
js6
ග
c ཧ
c
c
c ટ c Υ
͂ c c ɝ
js5
k6
k5 m6
c
࿁ c
ʔ c
Ⴠ
Ꮐ ɝ m5 n6
̙
c
Ꮐ
c
n5 n6
p6
ਗ
ɝ
cၡ
ٙc ੶ Ꮐ
p5
r6
cɝ
ટ c
• ϗ
ᐵ
s6
Υટ
Υ
t6
• r5
и ۍ
u6
ટ
Υ
x6
0 －8
0 －12
0 －18
0 －30
±2.5
±4
±6
＋6 ＋1
＋9 ＋1
＋9 ＋12 ＋4 ＋4
6
10
－150 －80 －40 －186 －116 －62
－40 －76
－25 －40
－25 －47
－25 －61
－13 －22
－13 －28
－13 －35
－5 －11
－5 －14
NTE2996资料
NTE2996MOSFETN−Channel, Enhancement ModeHigh Speed SwitchFeatures:D Ultra Low On−ResistanceD Dynamic dv/dt RatingD+175°C Operating TemperatureD Fast SwitchingD Fully Avalanche RatedAbsolute Maximum Ratings:Drain Current, I DContinuous (V GS = 10V). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T C = +25°C (Note 1)84A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T C = +100°C59A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Pulsed (Note 2)330A Total Power Dissipation (T C = +25°C), P D200W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Derate Above 25°C 1.4W/°C Gate−Source Voltage, V GS±20V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . Single Pulsed Avalanche Energy (I AS = 50A, L = 260µH, Note 3), E AS320mJ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Avalanche Current (Note 2), I AR50A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Repetitive Avalanche Energy (Note 2), E AR17mJ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Peak Diode Recovery dv/dt (Note 4), dv/dt 4.0V/ns Operating Junction Temperature Range, T J−55° to +175°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Storage Temperature Range, T stg−55° to +175°C. . . . . . . . . . Maximum Lead Temperature (During Soldering, 1.6mm from case, 10sec), T L+300°C Maximum Thermal Resistance:. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Junction−to−Case, R thJC0.75°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Junction−to−Ambient, R thJA62°C/W. . . . . . . . . . . .Typical Thermal Resistance, Case−to−Sink (Flat, greased surface), R thCS0.50°C/W Note 1.Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A.Note 2.Repetitive Rating: Pulse width limited by maximum junction temperature.Note 3.This is a calculated value limited to T J = +175°C.Note 4.I SD≤ 50A, di/dt ≤ 230A/µs, V DD≤ V(BR)DSS, T J≤ +175°C.Electrical Characteristics: (T J = +25°C unless otherwise specified)ParameterSymbol Test ConditionsMin Typ Max Unit Drain −Source Breakdown Voltage BV DSSV GS = 0V, I D = 250µA60−−VBreakdown Voltage T emperatureCoefficient ∆V (BR)DSS /∆T J Reference to +25°C, I D = 1mA−0.064−V/°CStatic Drain −Source ON Resistance R DS(on)V GS = 10V, I D = 50A, Note 5−−12ΩGate Threshold Voltage V GS(th)V DS = V GS , I D = 250µA 2.0− 4.0V Forward Transconductance g fs V DS = 25V, I D = 50A, Note 569−−mhos Drain −to −Source Leakage Current I DSS V DS = 60V, V GS = 0−−25µA V DS = 48V , V GS = 0V , T C = +150°C −−250µA Gate −Source Leakage, Forward I GSSV GS = 20V −−100nA Gate −Source Leakage, Reverse V GS = −20V−−−100nA T otal Gate Charge Q g V GS = 10V , I D = 50A, V DS = 48V−−130nC Gate −Source Charge Q gs −−28nC Gate −Drain (“Miller”) Charge Q gd −−44nC Turn −On Delay Time t d(on)V DD = 30V I D = 50A, R G = 3.6Ω, 10V Note 5−12−ns Rise Timet r ,V GS = 10V, Note 5−78−ns Turn −Off Delay Time t d(off)−48−ns Fall Timet f −53−ns Internal Drain Inductance L D Between lead, 6mm (0.25”) from − 4.5−nH Internal Source Inductance L S package and center of die contact −7.5−nH Input Capacitance C iss V GS = 0V, V DS = 25V, f = 1MHz −3210−pF Output CapacitanceC oss −690−pF Reverse Transfer Capacitance C rss −140−pF Source −Drain Diode Ratings and CharacteristicsContinuous Source Current I S (Body Diode) Note 6−−84A Pulse Source Current I SM (Body Diode) Note 2−−330A Diode Forward Voltage V SD T J = +25°C, I S = 50A, V GS = 0V , Note 5−− 1.3V Reverse Recovery Time t rr T J = +25°C, I F = 50A, di/dt = 100A/µs,−73110ns Reverse Recovery Charge Q rr Note 5−220330µCForward Turn −On Timet onIntrinsic turn −on time is neglegible (turn −on is dominated by L S + L D )Note 2.Repetitive Rating: Pulse width limited by maximum junction temperature.Note 5.Pulse Width ≤ 400µs, Duty Cycle ≤ 2%.Note 6.Calculated continuous current based on maximum allowable junction temperature. Packagelimitation current is 75A.。
UT61256CKC-12中文资料
Rev. 1.4
UT61256C
32K X 8 BIT HIGH SPEED CMOS SRAM
SYMBOL CIN CI/O MIN. MAX. 8 10 UNIT pF pF
CAPACITANCE (TA=25℃, f=1.0MHz)
PARAMETER Input Capacitance Input/Output Capacitance
A13 A8 A9 A11
OE
skinny PDIP
PIN DESCRIPTION
SYMBOL A0 - A14 I/O1 - I/O8 CE
WE OE VCC VSS
UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919
*Stress greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
NOKIAN功率因素控制N6-N12中文操作手册
LOAD
Line-to-Line Connection
L1 L2 L3 PE
Alarm circuit
Fan
400V
Alarm circuit
Fan
F2
F1
B
A
S2
S1
0V
110V
230V
400V
芬兰诺基亚电容器有限公司中国代表处
上海市仙霞路 317 号远东国际广场 B 座 3016 室 邮编（ZIP）：200051 TEL.:+86-21-62624082 FAX:+86-21-62351899 E-Mail:nokian@
1. 概述
N6N12-manual Page 3 of 3
1.1 安全事项 .................................................................................................................................... 3 1.2 环境条件 ..................................................................................................................................... 3 1.3 描述 ............................................................................................................................................ 3
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REVERSE LEAKAGE @VRWM
IR (uA)
1000.0 1000.0 500.0 500.0
200.0 200.0 50.0 50.0
10.0 10.0 5.0 5.0
5.0 5.0 5.0 5.0
5.0 5.0 5.0 5.0
5.0 5.0 5.0 5.0
5.0 5.0 5.0 5.0
29.70 31.40 32.40 34.20
35.10 37.10 38.70 40.90
42.30 44.70 45.90 48.50
BREAKDOWN VOLTAGE VBR (V) MAX. @IT
7.48 7.14 8.25 7.88
9.02 8.61 10.00 9.50
11.00 10.50 12.10 11.60
5.0 5.0 5.0 5.0
5.0 5.0 5.0 5.0
5.0 5.0 5.0 5.0
5.0 5.0 5.0 5.0
元器件交易网
1.5KE56
1N6289
45.60
1.5KE56A
1N6289A
47.80
1.5KE62
1N6290
50.20
1.5KE62A
1N6290A
REVERSE STAND-OFF
VOLTAGE VRWM (V)
5. 50 5.80 6.05 6.40
6.63 7.02 7.37 7.78
8.10 8.55 8.92 9.40
9.72 10.20 10.50 11.10
12.10 12.80 12.90 13.60
14.50 15.30 16.20 17.10
90.00 95.00 99.00 105.00
108.00 114.00 117.00 124.00
135.00 143.00 144.00 152.00
47.7 45.7 52.0 49.9
56.4 53.9 61.9 59.3
67.8 64.8 73.5 70.1
PEAK PULSE CURRENT IPP (A) 139.0 143.0 128.0 132.0
120.0 124.0 109.0 112.0
100.0 103.0 93.0 96.0
SYMBOL PPK PD
IFSM
TJ,TSTG
VALUE Minimum 1500
5.0
200
-65 to+175
UNITS Watts Watts
Amps
元器件交易网 NOTES:
Non-repetitive current pulse, per Fig. 3 and derated above TA=25 per Fig. 2. Mounted on Copper Leaf area of 0.79in2(20mm2). 8.3ms single half sine-wave, duty cycle= 4 pulses per minutes maximum.
FEATURES l Plastic package has Underwriters Laboratory
Flammability Classification 94V-O l Glass passivated chip junction in Molded Plastic package l 1500W surge capability at 1ms l Excellent clamping capability l Low zener impedance l Fast response time: typically less than 1.0 ps from 0 volts to BV min l Typical IR less than 1 A above 10V l High temperature soldering guaranteed: 260 /10 seconds/.375”,(9.5mm) lead length/5lbs., (2.3kg) tension
UNIDIRECTIONAL
PART NUMBER
1.5KE6.8 1.5KE6.8A 1.5KE7.5 1.5KE7.5A
1.5KE8.2 1.5KE8.2A 1.5KE9.1 1.5KE9.1A
1.5KE10 1.5KE10A 1.5KE11 1.5KE11A
1.5KE12 1.5KE12A 1.5KE13 1.5KE13A
1.5KE15 1.5KE15A 1.5KE16 1.5KE16A
1.5KE18 1.5KE18A 1.5KE20 1.5KE20A
1.5KE22 1.5KE22A 1.5KE24 1.5KE24A
1.5KE27 1.5KE27A 1.5KE30 1.5KE30A
1.5KE33 1.5KE33A 1.5KE36 1.5KE36A
元器件交易网
1.5KE SERIES
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE - 6.8 TO 440 Volts 1500 Watt Peak Power 5.0 Watt Steady State
17.80 18.80 19.40 20.50
21.80 23.10 24.30 25.60
26.80 28.20 29.10 30.80
31.60 33.30 34.80 36.80EAKDOWN VOLTAGE VBR (V) MIN. @IT
6.12 6.45 6.75 7.13
1N6298A
111.00
1.5KE150
1N6299
121.00
1.5KE150A
1N6299A
128.00
1.5KE160
1N6300
130.00
1.5KE160A
1N6300A
136.00
50.40 53.20 55.80 58.90
61.20 64.60 67.50 71.30
73.80 77.90 81.90 86.50
7.38 7.79 8.19 8.65
9.00 9.50 9.90 10.50
10.80 11.40 11.70 12.40
13.50 14.30 14.40 15.20
16.20 17.10 18.00 19.00
19.80 20.90 21.60 22.80
24.30 25.70 27.00 28.50
MAXIMUM RATINGS AND CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
RATING Peak Power Dissipation at TA=25 , TP=1ms(Note 1) Steady State Power Dissipation at TL=75 Lead Lengths .375”,(9.5mm) (Note 2) Peak Forward Surge Current, 8.3ms Single Half Sine-Wave Superimposed on Rated Load(JECED Method) (Note 3) Operating and Storage Temperature Range
87.0 90.0 79.0 82.0
68.0 71.0 64.0 67.0
56.5 59.5 51.5 54.0
47.0 49.0 43.0 45.0
38.5 40.0 34.5 36.0
31.5 33.0 29.0 30.0
26.5 28.0 24.0 25.3
22.2 23.2 20.4 21.4
77.80
1.5KE100
1N6295
81.00
1.5KE100A
1N6295A
85.50
1.5KE110
1N6296
89.20
1.5KE110A
1N6296A
94.00
1.5KE120
1N6297
97.20
1.5KE120A
1N6297A
102.00
1.5KE130
1N6298
105.00
1.5KE130A
10.8 10.5 11.7 11.3
12.5 12.1 13.8 13.4
15.0 14.5 16.2 15.6
17.3 16.7 19.0 18.2
22.0 21.2 23.5 22.5
26.5 25.2 29.1 27.7
31.9 30.6 34.7 33.2
39.1 37.5 43.5 41.4
53.00
1.5KE68
1N6291
55.10
1.5KE68A
1N6291A
58.10
1.5KE75
1N6292
60.70
1.5KE75A
1N6292A
64.10
1.5KE82
1N6293
66.40
1.5KE82A
1N6293A
70.10
1.5KE91
1N6294
73.70
1.5KE91A
1N9294A
元器件交易网
Fig. 5-STEADY STATE POWER DERATING CURVE
Fig. 6-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT UNIDIRECTIONAL
UNI-DIRECTIONAL 1500 Watt Axial Lead TVS
DEVICES FOR BIPOLAR APPLICATIONS For Bidirectional use C or CA Suffix for types 1.5KE6.8 thru types 1.5KE440.