KBU801中文资料
abbci801通讯模块说明书
abbci801通讯模块说明书引言：abbci801通讯模块是一种先进的通讯设备，广泛应用于各种领域。
本文将详细介绍abbci801通讯模块的特点、工作原理以及使用方法，帮助用户更好地了解和使用该产品。
一、产品特点1. 高速传输：abbci801通讯模块采用先进的传输技术，能够实现高速、稳定的数据传输，满足用户对数据传输速度的需求。
2. 多协议支持：abbci801通讯模块支持多种通讯协议，包括TCP/IP、UDP、Modbus等，可根据用户需求进行灵活配置。
3. 强大的兼容性：abbci801通讯模块兼容多种硬件设备，可以与各种传感器、PLC等设备进行无缝对接，方便用户进行系统集成。
4. 可靠稳定：abbci801通讯模块具有高可靠性和稳定性，能够在各种恶劣环境下正常工作，有效保障系统的正常运行。
二、工作原理abbci801通讯模块通过与外部设备建立通讯连接，在设备之间进行数据传输和交换。
其工作原理如下：1. 通讯连接建立：abbci801通讯模块通过网络或串口与外部设备建立通讯连接，确保数据的传输通道畅通。
2. 数据解析：abbci801通讯模块接收到外部设备传来的数据后，对数据进行解析，将其转化为可理解的格式。
3. 数据处理：abbci801通讯模块对解析后的数据进行处理，根据用户的配置和需求，进行相应的操作和响应。
4. 数据传输：abbci801通讯模块将处理后的数据传输给外部设备，实现数据的双向传输。
三、使用方法1. 硬件连接：将abbci801通讯模块与外部设备进行正确连接，确保通讯线路正常。
2. 配置参数：根据实际需求，对abbci801通讯模块进行参数配置，包括通讯协议、通讯速率等。
3. 数据传输：启动abbci801通讯模块，与外部设备建立通讯连接后，即可进行数据传输。
4. 故障排除：在使用过程中，如遇到通讯故障或数据传输异常等情况，可以参考说明书中的故障排除方法进行处理。
结论：abbci801通讯模块是一种功能强大、稳定可靠的通讯设备，具有高速传输、多协议支持和强大的兼容性等特点。
mk-801分子质量
mk-801分子质量MK-801（也称为迷走酸盐801）是一种非竞争性N-甲基-D-天冬氨酸（NMDA）受体拮抗剂，其分子质量为275.33克/摩尔。
NMDA受体是一种离子通道受体，参与神经递质谷氨酸的转导过程，对神经元的正常功能起着重要作用。
MK-801作为一种NMDA受体拮抗剂，可以阻断NMDA受体通道的开放，从而抑制神经元兴奋。
这使得MK-801在神经科学研究中被广泛应用，特别是在研究记忆和学习、神经退行性疾病、药物成瘾和神经元保护方面。
研究表明，MK-801可通过阻断NMDA受体的活化来干预神经递质谷氨酸的信号传递。
谷氨酸是一种兴奋性神经递质，在神经元之间传递信号时起到重要作用。
然而，过度的谷氨酸释放和NMDA受体的过度活化可能导致神经细胞的损伤和死亡。
MK-801的拮抗作用可以减少过度的NMDA受体活化，从而保护神经元免受损伤。
在学习和记忆的研究中，MK-801被广泛用于探究NMDA受体对学习和记忆形成的影响。
通过给小鼠注射MK-801，研究人员可以观察到记忆和学习能力的变化。
研究发现，MK-801可以干扰长期增强（LTP）的形成，这是一种与学习和记忆密切相关的神经可塑性现象。
这些研究为我们进一步了解学习和记忆的机制提供了重要线索。
除了学习和记忆，MK-801还被用于研究神经退行性疾病，如阿尔茨海默病和帕金森病。
这些疾病与神经元损伤和死亡有关，而MK-801的拮抗作用可以减少NMDA受体的过度活化，从而保护神经元免受进一步损伤。
MK-801还被用于研究药物成瘾。
药物成瘾是一种复杂的神经行为现象，其中NMDA受体在药物奖赏和依赖过程中起着重要作用。
通过使用MK-801，研究人员可以研究NMDA受体在药物成瘾中的作用机制，并探索可能的治疗方法。
MK-801作为一种非竞争性NMDA受体拮抗剂，具有广泛的应用前景。
它在研究学习和记忆、神经退行性疾病、药物成瘾和神经元保护等领域发挥着重要作用。
进一步的研究将有助于我们更好地理解神经递质谷氨酸的信号传递以及相关疾病的发生机制，为相关疾病的治疗提供新的思路和方法。
KSE800中文资料
HIGH DC CURRENT GAINMIN h FE = 750 @I C = 1.5 and 2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS• Complement to KSE700/701/702/703ABSOLUTE MAXIMUM RATINGSELECTRICAL CHARACTERISTICS (T C =25°C)CharacteristicSymbol RatingUnitCollector- Base Voltage : KSE800/801 : KSE802/803 Collector-Emitter Voltage : KSE800/801 : KSE802/803 Emitter- Base Voltage Collector Current Base CurrentCollector Dissipation (T C =25°C) Junction Temperature Storage TemperatureV CBOV CEOV EBO I C I B P C T JT STG60 8060 80 5 4 0.1 40150-55 ~ 150V VV V V A A W °C °CCharacteristicSymbol Test ConditionMin MaxUnit Collector Emitter Breakdown Voltage : KSE800/801 : KSE802/803 Collector Cutoff Current: KSE800/801 : KSE802/803 Collector Cutoff CurrentEmitter Cutoff CurrentDC Current Gain : KSE800/802 : KSE801/803 : ALL DEVICESCollector-Emitter Saturation Voltage : KSE800/802 : KSE801/803 : ALL DEVICES Base-Emitter On Voltage : KSE800/802 : KSE801/803 : ALL DEVICESBV CEOI CEOI CBOI EBO h FEV CE (sat)V BE (on)I C = 50mA, I B = 0V CE = 60V, I B = 0 V CE = 80V, I B = 0V CB = Rated BV CEO , I E = 0 V CB = Rated BV CEO , I E = 0 T C = 100°C V BE = 5V, I C = 0 V CE = 3V, I C = 1.5A V CE = 3V, I C = 2A V CE = 3V, I C = 4A I C = 1.5A, I B = 30mA I C = 2A, I B = 40mA I C = 4A, I B = 40mAV CE = 3V, I C = 1.5A V CE = 3V, I C = 2A V CE = 3V, I C = 4A60 80750750100100100100500 22.52.8 31.22.5 3V VµA µA µA µA mAV V V V V VTO-1261. Emitter2. Collector3. Base©1999 Fairchild Semiconductor CorporationRev. BTRADEMARKSACEx™CoolFET™CROSSVOLT™E 2CMOS TM FACT™FACT Quiet Series™FAST ®FASTr™GTO™HiSeC™The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF FAIRCHILD SEMICONDUCTOR CORPORA TION.As used herein:ISOPLANAR™MICROWIRE™POP™PowerTrench™QS™Quiet Series™SuperSOT™-3SuperSOT™-6SuperSOT™-8TinyLogic™1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant intothe body, or (b) support or sustain life, or (c) whosefailure to perform when properly used in accordancewith instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a lifesupport device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of TermsDatasheet Identification Product Status Definition Advance InformationPreliminary No Identification Needed Obsolete This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.Formative or In DesignFirst ProductionFull ProductionNot In ProductionDISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.元器件交易网。
HMBT8050中文资料
HMBT8050中文资料Page No. : 1/3HMBT8050NPN EPITAXIAL TRANSISTORDescriptionThe HMBT8050 is designed for general purpose amplifier applications.FeaturesHigh DC Current hFE=150-400 at IC=150mA ? Complementary to HMBT8550Absolute Maximum RatingsMaximum TemperaturesStorage Temperature........................................................................................... -55 ~ +150 °C Junction Temperature.................................................................................... +150 °C Maximum ? Maximum Power DissipationTotal Power Dissipation (Ta=25°C)............................................................................... 225 mW ? Maximum Voltages and Currents (Ta=25°C)VCBO Collector to Base Voltage......................................................................................... 25 V VCEO Collector to Emitter Voltage...................................................................................... 20 V VEBO Emitter to Base Voltage.............................................................................................. 5 V IC CollectorCurrent (700)mACharacteristics (Ta=25°C)Symbol Min.Typ.Max.Unit Test ConditionsBVCBO 25--V IC=10uA, IE=0BVCEO 20--V IC=1mA, IB=0BVEBO 5--V IE=10uA, IC=0ICBO --1uAVCB=20V. IE=0*VCE(sat)--500mV IC=500mA, IB=50mA VBE(on)--1V VCE=1V, IC=150mA *hFE 150-500VCE=1V, IC=150mA fT 150--MHz VCE=10V, IC=20mA, f=100MHz Cob--10pFVCB=10V, f=1MHz*Pulse Test: Pulse Width ≤380us, Duty Cycle ≤2%Classification Of hFERank D9D D9E Range150-300250-500Page No. : 2/3 Characteristics CurvePage No. : 3/3SOT-23 Dimension*: TypicalInches MillimetersInches MillimetersDIM Min.Max.Min.Max.DIM Min.Max.Min.Max.A 0.11020.1204 2.80 3.04J0.00340.00700.0850.177B 0.04720.0630 1.20 1.60K 0.01280.02660.320.67C 0.03350.05120.89 1.30L0.03350.04530.851.15D 0.01180.01970.300.50S 0.08300.10832.10 2.75G 0.06690.0910 1.70 2.30V0.00980.02560.250.65H0.00050.00400.0130.10Notes: 1.Dimension and tolerance based on our Spec. dated Sep. 07,1997.2.Controlling dimension: millimeters.3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of basematerial.4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.Material:Lead: 42 Alloy; solder platingMold Compound: Epoxy resin family, flammability solid burning class: UL94V-0Important Notice:All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.? HSMC reserves the right to make changes to its products without notice.HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.Head Office And Factory:Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931。
XJY801光扩散剂使用中英说明书
有机硅树脂光扩散剂XJY-801 Series【产品概述】光扩散粉801系列是结合有机硅的润滑性，耐冲击性，光扩散性，耐热性等优异性能的高性能粉末。
该粉末可提供平衡的透光率、雾度以及光散射效果等多种光学性能，广泛应用于高端透明PC 灯/灯罩/灯箱、平板液晶光扩散板等领域。
XJY-801系列可提供粒径从0.5－30μm，粒径均一。
【技术规格】电子显微镜照片粒径分布图材质：有机硅树脂外观：白色流动性粉末折射率： 1.42-1.45 低于丙烯酸系列及PS/PMMA/PC等透明树脂形状：球状含水率：≦1%耐热性: >400℃非常出色、不黄变、不产生黑点密度: 1.3【XJY-801系列型号】牌号XJY-80106 XJY-8011 XJY-80113 XJY-80116 XJY-8012 XJY-8015 XJY-801105 XJY-801300 粒径/µm 0.6±0.05 1.0±0.1 1.3±0.1 1.6±0.1 2.0±0.2 5.0±0.5 15±2.0 30±5 【应用范围】◆光扩散板、光扩散膜：通过与PC，聚苯乙烯，PMMA等树脂的结合赋予其优异的光扩散性，也可通过添加到喷涂中赋予膜的光扩散性；◆用于油漆、涂料及油墨，可显著改进色料的分散性及润滑性，赋予涂料滑润质感及艺术的亚光效果；优点如下：1）亮度高、添加量更少；2）光扩散性优异；3）光透过率高； 4）在树脂中分散性好，可直接添加;5）耐高温至470℃、不变色、不泛黄、不发灰；挤出灯管灯罩过程中不易生成黑点，成品率高。
【使用方法】根据所需要的不同的透光及雾度要求，选择不同的XJY-801光扩散剂系列产品，一般添加量为0.4-0.8%。
最终结果需要根据不同材料形态、厚度以及透光雾度要求，通过小试测试得出结论。
【储存和包装】在低于25°C (77°F)下未开封保存于原容器中，该产品自生产之日起保质期为12个月。
U290资料
Switching Characteristics
Turn ON Delay Time Rise Time Turn OFF Delay Time Fall Time td(on) tr td(off) tf 15 20 15 20 15 20 15 20 ns ns ns ns
VDD = 1.5V, ID(ON) = 30 mA RL = 50Ω VGS(ON) = ØV (U290) VGS(OFF) = – 12 V (U291) VGS(OFF) = – 7V
– 30 V 100 mA 500 mW 4 mW/°C
At 25°C free air temperature: Static Electrical Characteristics
Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Drain Cutoff Current Drain Source ON Voltage Static Drain Source VGS(OFF) IDSS ID(OFF) VDS(ON) rDS(ON) 1
01/99
B-65
U290, U291
N-Channel Silicon Junction Field-Effect Transistor
¥ Choppers ¥ Low On Resistance Switches
Absolute maximum ratings at TA = 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating
NUF8010MUT2G;中文规格书,Datasheet资料
NUF8010MU8-Channel EMI Filter with Integrated ESD ProtectionThe NUF8010MU is a eight −channel (C −R −C) Pi −style EMI filter array with integrated ESD protection. Its typical component values of R = 100 W and C = 7 pF deliver a cutoff frequency of 215 MHz and stop band attenuation greater than −20 dB from 800 MHz to 5.0 GHz.This performance makes the part ideal for parallel interfaces with data rates up to 143 Mbps in applications where wireless interference must be minimized. The specified attenuation range is very effective in minimizing interference from 2G/3G, GPS, Bluetooth ® and WLAN signals.The NUF6010MU is available in the low −profile 16−lead 1.2mm x 3.5 mm x 0.5mm UDFN16 surface mount package.Features/Benefits•±8.0 kV ESD Protection on each channel (IEC61000−4−2 Level 4,Contact Discharge)•R/C Values of 100 W and 7 pF deliver Exceptional S21 Performance Characteristics of 250 MHz f 3dB and −20 dB Stop Band Attenuation from 800 MHz to 3.0 GHz•Integrated EMI/ESD System Solution in UDFN Package Offers Exceptional Cost, System Reliability and Space Savings •This is a Pb −Free DeviceApplications•EMI Filtering for LCD and Camera Data Lines•EMI Filtering and Protection for I/O Ports and KeypadsFigure 1. Electrical SchematicSee Table 1 for pin descriptionnFigure 2. Typical Insertion Loss CharacteristicFREQUENCY (Hz)S 21 (d B)−50−45−40−35−30−25−20−15−10−501.E+061.E+071.E+08 1.E+09 1.E+10Device Package Shipping †ORDERING INFORMATIONNUF8010MUT2GUDFN16(Pb −Free)3000 / Tape & ReelMARKING DIAGRAM†For information on tape and reel specifications,including part orientation and tape sizes, please refer to our T ape and Reel Packaging Specifications Brochure, BRD8011/D.UDFN16MU SUFFIX CASE 517AF 1810 M G810= Specific Device CodeM = Date and Assembly Location G= Pb −Free PackageTable 1. FUNCTIONAL PIN DESCRIPTIONFilter Device Pins DescriptionFilter 1 1 & 16Filter + ESD Channel 1Filter 2 2 & 15Filter + ESD Channel 2Filter 3 3 & 14Filter + ESD Channel 3Filter 4 4 & 13Filter + ESD Channel 4Filter 5 5 & 12Filter + ESD Channel 5Filter 6 6 & 11Filter + ESD Channel 6Filter 77 & 10Filter + ESD Channel 6Filter 88 & 9Filter + ESD Channel 6Ground Pad GND GroundMAXIMUM RATINGSParameter Symbol Value Unit ESD Discharge IEC61000−4−2Contact Discharge V PP8.0kV Operating Temperature Range T OP−40 to 85°C Storage Temperature Range T STG−55 to 150°C Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 seconds)T L260°C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.ELECTRICAL CHARACTERISTICS (T J = 25°C unless otherwise noted)Parameter Symbol Test Conditions Min Typ Max Unit Maximum Reverse Working Voltage V RWM 5.0V Breakdown Voltage V BR I R = 1.0 mA 6.07.08.0V Leakage Current I R V RWM = 3.3 V100nA Resistance R A I R = 20 mA85100115W Diode Capacitance C d V R = 2.5 V, f = 1.0 MHz711pF Line Capacitance C L V R = 2.5 V, f = 1.0 MHz1418pF215MHz3 dB Cut−Off Frequency (Note 1)f3dB Above this frequency,appreciable attenuation occurs280MHz6 dB Cut−Off Frequency f6dB Above this frequency,appreciable attenuation occurs1.50 W source and 50 W load termination.TYPICAL PERFORMANCE CURVES (T A = 25°C unless otherwise specified)Figure 3. Typical Insertion Loss Characteristic REVERSE VOLTAGE (V)N O R M A L I Z E D C A P A C I T A N C ETEMPERATURE (°C)R E S I S T A N C E (W )FREQUENCY (Hz)Figure 4. Typical Analog CrosstalkFigure 5. Typical Capacitance vs.Reverse Biased Voltage(Normalized Capacitance Cd at 2.5 V)Figure 6. Typical Resistance over TemperatureFREQUENCY (Hz)S 21 (d B)−50−45−40−35−30−25−20−15−10−501.E+061.E+071.E+08 1.E+09 1.E+10−70−60−50−40−30−20−1001.E+061.E+071.E+08 1.E+09 1.E+S 41 (d B )0.511.520123451.05−40−200204060801.02510.9750.95Theory of OperationThe NUF8010MU combines ESD protection and EMI filtering conveniently into a small package for today’s size constrained applications. The capacitance inherent to a typical protection diode is utilized to provide the capacitance value necessary to create the desired frequency response based upon the series resistance in the filter. By combining this functionality into one device, a large number of discrete components are integrated into one small package saving valuable board space and reducing BOM count and cost in the application.Application ExampleThe accepted practice for specifying bandwidth in a filter is to use the 3 dB cutoff frequency. Utilizing points such as the 6 dB or 9 dB cutoff frequencies results in signal degradation in an application. This can be illustrated in an application example. A typical application would include EMI filtering of data lines in a camera or display interface.In such an example it is important to first understand the signal and its spectral content. By understanding these things, an appropriate filter can be selected for the desired application. A typical data signal is pattern of 1’s and 0’s transmitted over a line in a form similar to a square wave.The maximum frequency of such a signal would be the pattern 1-0-1-0 such that for a signal with a data rate of 100 Mbps, the maximum frequency component would be 50 MHz. The next item to consider is the spectral content of the signal, which can be understood with the Fourier seriesapproximation of a square wave, shown below in Equations 1 and 2 in the Fourier series approximation.From this it can be seen that a square wave consists of odd order harmonics and to fully construct a square wave n must go to infinity. However, to retain an acceptable portion of the waveform, the first two terms are generally sufficient. These two terms contain about 85% of the signal amplitude and allow a reasonable square wave to be reconstructed.Therefore, to reasonably pass a square wave of frequency x the minimum filter bandwidth necessary is 3x . All ON Semiconductor EMI filters are rated according to this principle. Attempting to violate this principle will result in significant rounding of the waveform and cause problems in transmitting the correct data. For example, take the filter with the response shown in Figure 7 and apply three different data waveforms. To calculate these three different frequencies, the 3 dB, 6 dB, and 9 dB bandwidths will be used.Equation 1:x(t)+12)2p aS n +1ƪ12n *1sin((2n *1)w 0t)ƫ(eq. 1)Equation 2 (simplified form of Equation 1):x(t)+12)2pƪsin(w 0t)1)sin(3w 0t)3)sin(5w 0t)5)AAA ƫ(eq. 2)M a g n i t u d e (d B )Frequency (Hz)100k 1M 100M1G 10G10M Figure 7. Filter BandwidthFrom the above paragraphs it is shown that the maximumsupported frequency of a waveform that can be passed through the filter can be found by dividing the bandwidth by a factor of three (to obtain the corresponding data ratemultiply the result by two). The following table gives the bandwidth values and the corresponding maximum supported frequencies and the third harmonic frequencies.Table 2. Frequency ChartBandwidth Maximum SupportedFrequencyThird Harmonic Frequency3 dB –100 MHz 33.33 MHz (f 1)100 MHz 6 dB –200 MHz 66.67 MHz (f 2)200 MHz 9 dB –300 MHz100 MHz (f 3)300 MHzConsidering that 85% of the amplitude of the square is in the first two terms of the Fourier series approximation most of the signal content is at the fundamental (maximum supported) frequency and the third harmonic frequency. If a signal with a frequency of 33.33 MHz is input to this filter,the first two terms are sufficiently passed such that the signal is only mildly affected, as is shown in Figure 8a. If a signalwith a frequency of 66.67 MHz is input to this same filter,the third harmonic term is significantly attenuated. This serves to round the signal edges and skew the waveform, as is shown in Figure 8b. In the case that a 100 MHz signal isinput to this filter, the third harmonic term is attenuated evenfurther and results in even more rounding of the signal edges as is shown in Figure 8c. The result is the degradation of the data being transmitted making the digital data (1’s and 0’s)more difficult to discern. This does not include effects of other components such as interconnect and other path losses which could further serve to degrade the signal integrity.While some filter products may specify the 6 dB or 9 dB bandwidths, actually using these to calculate supported frequencies (and corresponding data rates) results in significant signal degradation. To ensure the best signal integrity possible, it is best to use the 3 dB bandwidth to calculate the achievable data rate.Figure 8. Input and Output Waveforms of FilterInput WaveformOutput WaveformInput WaveformOutput WaveformInput WaveformOutput Waveforma) Frequency = f 1b) Frequency = f 2c) Frequency = f 3PACKAGE DIMENSIONSUDFN16, 3.5x1.2, 0.4P CASE 517AF −01ISSUE BNOTES:1.DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.2.CONTROLLING DIMENSION: MILLIMETERS.3.DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.25 AND 0.30 mm FROM TERMINAL.4.COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS.L16XDIM MIN NOM MAX MILLIMETERS A 0.450.500.55A10.000.030.05A30.127 REF b 0.150.200.25D 3.50 BSC D2 2.70 2.80 2.90E 1.20 BSC E20.200.300.40e 0.40 BSC K 0.20−−−−−−L0.200.250.3015X*For additional information on our Pb −Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.SOLDERING FOOTPRINT*ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.Bluetooth is a registered trademark of Bluetooth SIG.PUBLICATION ORDERING INFORMATION分销商库存信息: ONSEMINUF8010MUT2G。
KTY81-210,KTY82-210中文资料
客户料号 (CUSTOMER PART NO.)： KTY82-210 中文资料
规格型号 (PART NO.)：
KTY81/210,KTY82/210
文件编号 (FILE NO.)：
编制日期（DATE）：
客户确认(CUSTOMER CONFIRM)
批准（APPROVE）
审核（CHECK）
南京华巨电子有限公司
194
100
212
110
230
120
2ቤተ መጻሕፍቲ ባይዱ8
125
257
130
266
140
284
150
302
温度係数 KTY81-210,KTY82-210，KTY81/210,KTY82/210
%/（K）
0.99 0.98 0.96 0.93 0.91 0.88 0.85 0.83 0.8 0.79 0.78 0.75 0.73 0.71 0.69 0.67 0.65 0.63 0.59 0.53 0.49 0.44 0.33 0.20
电阻值（Ω）
MIN
951 1000 1105 1218 1338 1467 1603 1748 1901 1980 2057 2217 2383 2557 2737 2924 3118 3318 3523 3722 3815 3901 4049 4153
TYP
980 1030 1135 1247 1367 1495 1630 1772 1922 2000 2080 2245 2417 2597 2785 2980 3182 3392 3607 3817 3915 4008 4166 4280
产品技术规格
产品技术规格
/
50