2SK170中文资料

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2SK3541中文资料

2SK3541中文资料TransistorSmall switching (30V, 0.1A)2SK3541!ApplicationsInterfacing, switching (30V , 100mA)!Features1) Low on-resistance.2) Fast switching speed.3) Low voltage drive (2.5V) makes this device ideal for portable equipment.4) Easily designed drive circuits.5) Easy to parallel.!StructureSilicon N-channel MOSFET!External dimensions (Units : mm)!Absolute maximum ratings (T a=25°C)ParameterDrain-source voltage Gate-source voltage Drain current Total power dissipation (Tc =25°C)Channel temperature Storage temperatureV DSS V GSS I DR P D2Tch 30V V mA mA mW °C ±20100I D I DRP ?1mA I DP ?1Continuous Pulsed Continuous PulsedmA 400100400150150Tstg°C55~+150Symbol Limits Unit ?1 Pw ≤10μs, Duty cycle <1%2 With each pin mounted on the recommended lands.Reverse drain current!Equivalent circuitA pr otection diode is included between the gateand the source terminals to protect the diodeagainst static electricity when the product is in e a protection circuit when the fixed voltages are exceeded.Transistor!Electrical characteristics (T a=25°C)!Packaging specificationsT2R 80002SK3541TypePackageCodeBasic ordering unit (pieces)Taping !Electrical characteristic curvesD RA I N C U R R E N T : I D (A )DRAIN-SOURCE VOLTAGE : V DS (V)Fig.1 Typical output characteristicsD R A I N C U R RE N T : I D (A )GATE-SOURCE VOLTAGE : V GS (V)Fig.2 Typical transfer characteristicsG A T E T H R E S H O L D V O L T A G E : V G S (t h ) (V )CHANNEL TEMPERATURE : Tch (°C)Fig.3 Gate threshold voltage vs.channel temperatureTransistorS T A T I C D R A I N -S O U R C E O N -S T A T E R E S I S T A N C E : R D S (o n ) (?)DRAIN CURRENT : I D (A)Fig.4 Static drain-source on-stateresistance vs. drain current (Ι)S T A T I C D R A I N -S O U R C E O N -S T A T E R E S I S T A N C E : R D S (o n ) (?)DRAIN CURRENT : I D (A)Fig.5 Static drain-source on-stateresistance vs. drain current (ΙΙ)GATE-SOURCE VOLTAGE : V GS (V)S T A T I C D R A I N -S O U RC E O N -S T A T E R E S I S T A N C E : RD S (o n ) (?)Fig.6 Static drain-sourceon-state resistance vs. gate-source voltageCHANNEL TEMPERATURE : Tch (°C)S T A T I C D R A I N -S O U R C E O N -S T A T E R E S I S T A N C E : R D S (o n ) (?)Fig.7 Static drain-source on-stateresistance vs. channel temperatureF O R W A R D T R A N S F E R A D M I T T A N C E : |Y f s | (S ) DRAIN CURRENT : I D (A)Fig.8 Forward transferadmittance vs. drain currentR E V E R S E D R A I N C U R R E N T : I D R (A ) SOURCE-DRAIN VOLTAGE : V SD (V)Fig.9 Reverse drain current vs.source-drain voltage (Ι)R E V E R S E D R A I N C U R R E N T : I D R (A )SOURCE-DRAIN VOLTAGE : V SD (V)Fig.10 Reverse drain current vs.source-drain voltage (ΙΙ)C A P A C I T A N C E : C (p F )DRAIN-SOURCE VOLTAGE : V DS (V)Fig.11 Typical capacitance vs.drain-source voltageS W I T H I N G T I M E : t (n s )DRAIN CURRENT : I D (mA)Fig.12 Switching characteristics(See Figures 13 and 14 for the measurement circuit and resultant waveforms)Transistor!Switching characteristics measurement circuitFig.13 Switching time measurement circuitFig.14 Switching time waveformsAppendixAbout Export Control Order in JapanProducts described herein are the objects of controlledgoods in Annex 1 (Item 16) of Export Trade ControlOrder in Japan.In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.Appendix1-Rev1.0。

2SK1937-01中文资料

元器件交易网
2SK1937-01
FAP-IIA Series
> Features
- High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Avalanche Proof
↑
7
↑
8
↑↑
9
VGS [V] IF [A]
VDS [V]
C [nF]
→ VDS [V]
Allowable Power Dissipation vs. TC
↑
பைடு நூலகம்10
↑
→ Qg [nC]
Safe operation area
↑
12
Zth(ch-c) [K/W]
→ VSD [V]
Transient Thermal impedance
tf
RGS=10 Ω
Avalanche Capability
I AV
L = 100µH Tch=25°C
Continous Reverse Drain Current
I DR
Pulsed Reverse Drain Current
I DRM
Diode Forward On-Voltage
V SD
IF=2xIDR VGS=0V Tch=25°C
> Applications
- Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier

2SK1941中文资料

Unit V V A A V W °C °C
- Electrical Characteristics (TC=25°C), unless otherwise specified
Item
Symbol
Test conditions
Drain-Source Breakdown-Voltage
V (BR)DSS ID=1mA
Symbol R th(ch-a) R th(ch-c)
Test conditions channel to air channel to case
Min. Typ. Max. Unit 30 °C/W 1,25 °C/W
FUJI ELECTRIC GmbH; Lyoner Straße 26; D-60528 Frankfurt; Tel: 069-66 90 29-0; Fax: 069-66 90 29-56
VGS=±30V VDS=0V
Drain Source On-State Resistance
R DS(on)
ID=8A
VGS=10V
Forward Transconductance
g fs
ID=8A
VDS=25V
Input Capacitance
C iss
VDS=25V
Output Capacitance
C oss
VGS=0V
Reverse Transfer Capacitance
C rss
f=1MHz
Turn-On-Time ton (ton=td(on)+tr)
t d(on)
VCC=300V
tr
ID=8A
Turn-Off-Time toff (ton=td(off)+tf)

2SJxxxx2SKxxxx系列晶体管参数大全

2S553 N-FET 500 V 5 A 50 W - 1,5 Ohm
2SK555 N-FET 500 V 7 A 60 W - 0,85 Ohm
2SK557 N-FET 500 V 12 A 100 W - 0,6 Ohm
2SK1101 N-FET 450 V 10 A 50 W - 0,65 Ohm
2SK1102 N-FET 500 V 10 A 50 W - -
2SK1113 N-FET 120 V 3 A 20 W - -
2SK1117 N-FET 600 V 6 A 100 W - 1,25 Ohm
2SJ307 P-FET 250 V 6 A 2 W - 1,0 Ohm
2SK315 N-FET 20 V 2,5 mA 0,2 W - -
2SK320 N-FET 450 V 5 A 50 W - 1,83 Ohm
2SK330 N-FET 50 V 14 mA 0,2 W - 320 Ohm
2SK125 N-FET 25 V 0,1 A 0,3 W - -
2SK152 N-FET 15 V 9,5 mA - - -
2SK161 N-FET 18 V 0,01 A 0,2 W - -
2SJ162 P-FET 160 V 7 A 100 W - 1 Ohm
2SK163 N-FET 50 V 0,03 A 0,4 W - -
2SK332 N-FET 40 V 12 mA - - -
2SJ353 P-FET 60 V 1,5 A 1 W - 0,37 Ohm
2SK357 N-FET 150 V 5 A 40 W - 0,9 Ohm
2SK359 N-FET 20 V 30 mA 0,4 W - -

2SK410中文资料

10
1
Ratings 180 ±20 8 120 Hale Waihona Puke 50 –55 to +150
Unit V V A W °C °C
Electrical Characteristics (Ta = 25°C)
Item Power output Drain efficiency Drain to source breakdown voltage Gate to source breakdown voltage Gate to source cutoff voltage Drain current Drain to source saturation voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Power output Power gain Note: 1. Pulse Test Symbol Min PO η V(BR)DSS V(BR)GSS VGS(off) I DSS VDS(on) |yfs| Ciss Coss Crss PO PG 140 — 180 ±20 0.5 — — 0.9 — — — — — Typ 180 80 — — — — 3.8 1.25 440 75 0.5 100 17 Max — — — — 3.0 1.0 6.0 — — — — — — Unit W % V V V mA V S pF pF pF WPEP dB Test conditions VDD = 80 V, f = 28 MHz, I DQ = 0.1 A, Pin = 5 W I D = 10 mA, VGS = 0 I G = ±100 µA, VDS = 0 I D = 1 mA, VDS = 10 V*1 VDS = 140 V, VGS = 0 I D = 4 A, VGS = 10 V*1 I D = 3 A, VDS = 20 V*1 VGS = 5 V, VDS = 0, f = 1 MHz VGS = –5 V, VDS = 50 V, f = 1 MHz VGD = –50 V, f = 1 MHz VDD = 80 V, f = 28 MHz, ∆f = 20 kHz, IMD ≤ –30 dB

2SK3070中文资料

Static Drain to Source on State Resistance vs. Drain Current
100
Pulse Test
50
20
10 VGS = 4 V
5 10 V
2
1 1 3 10
30 100 300 1000
Drain Current I D (A)
Static Drain to Source on State Resistance vs. Temperature
2SK3070(L),2SK3070(S)
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS(on) = 4.5 mΩ typ.
• Low drive current • 4 V gate drive device can be driven from 5 V source
60
40 75°C 25°C
20 Tc = –25°C
0
1
2
3
4
5
Gate to Source Voltage V GS (V)
4
Drain to Source Saturation Voltage V DS(on) (V)
Drain to Source Saturation Voltage vs. Gate to Source Voltage
20 Pulse Test
16
12
I D = 50 A
8 VGS = 10 V
10, 20 A
4 4V
10, 20, 50 A

2SK1170中文资料

3
2SK1169, 2SK1170
Power vs. Temperature Derating 100 150 Channel Dissipation Pch (W) 30 Drain Current ID (A) 10 3 1.0 Operation in this area is limited by RDS (on) 0.3 0 50 100 Case Temperature TC (°C) 150 0.1 1 Ta = 25°C
Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test
D C
PW
Maximum Safe Operation Area
10
1
= 10 m s
C
10
0 µs
µs
100
m
(1
O
s
pe
ra
tio
n
(T
Sh
50
=
ot ) 25 °C )
2SK1170 2SK1169
3 10 30 100 300 1,000 Drain to Source Voltage VDS (V)
3.6
0.9 1.0
5.45 ± 0.5
5.45 ± 0.5

2SK1057中文资料

1
Symbol VDSX
Ratings 120 140 160 ±15 7 7 100 150 –55 to +150
Unit V
V A A W °C °C
2
2SK1056, 2SK1057, 2SK1058
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Symbol Min 2SK1056 V(BR)DSX 2SK1057 2SK1058 Gate to source breakdown voltage Gate to source cutoff voltage Drain to source saturation voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Note: 1. Pulse test V(BR)GSS VGS(off) VDS(sat) |yfs| Ciss Coss Crss t on t off 120 140 160 ±15 0.15 — 0.7 — — — — — — — — 1.0 600 350 10 180 60 — 1.45 12 1.4 — — — — — V V V S pF p A, I G = ±100 µA, VDS = 0 I D = 100 mA, VDS = 10 V I D = 7 A, VGD = 0 *1 I D = 3 A, VDS = 10 V *1 VGS = –5 V, VDS = 10 V, f = 1 MHz Typ — Max — Unit V Test conditions I D = 10 mA, VGS = –10 V

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• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties.
TOSHIBA
2-5F1D
operating temperature/current/voltage, etc.) are within the
Weight: 0.21 g (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
20070701-EN GENERAL
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.
⎪Yfs⎪
VDS = 10 V, VGS = 0, f = 1 kHz
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
Crss
VDG = 10 V, ID = 0, f = 1 MHz
NF (1)
VDS = 10 V, ID = 1.0 mA, RG = 1 kΩ, f = 1 kHz
பைடு நூலகம்
⎯
V
2.6
⎯
20
mA
−0.2
⎯
−1.5
V
⎯
22
⎯
mS
⎯
30
⎯
pF
⎯
6
⎯
pF
⎯
1.0
10
dB
⎯
0.5
2
1
2007-11-01
2SK170
2
2007-11-01
2SK170
3
2007-11-01
2SK170
4
2007-11-01
2SK170
RESTRICTIONS ON PRODUCT USE
• The information contained herein is subject to change without notice.
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
JEITA
SC-43
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
5
2007-11-01
Unit
Gate-drain voltage
VGDS
−40
V
Gate current
IG
10
mA
Drain power dissipation
PD
400
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
−55~125
°C
JEDEC
TC-92
NF (2)
VDS = 10 V, ID = 1.0 mA, RG = 1 kΩ, f = 1 kHz
Note: IDSS classification GR: 2.6~6.5 mA, BL: 6.0~12 mA, V: 10~20 mA
Min Typ. Max Unit
⎯
⎯ −1.0 nA
−40 ⎯
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK170
2SK170
Low Noise Audio Amplifier Applications
Unit: mm
• Recommended for first stages of EQ and M.C. head amplifiers. • High |Yfs|: |Yfs| = 22 mS (typ.) (VDS = 10 V, VGS = 0, IDSS = 3 mA) • High breakdown voltage: VGDS = −40 V • Low noise: En = 0.95 nV/Hz1/2 (typ.)
• The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations.
Noise figure