SD085-23-21-021;中文规格书,Datasheet资料
SD51;中文规格书,Datasheet资料
Major Ratings and Characteristics SCHOTTKY RECTIFIER60 AmpSD51Bulletin PD-2.327 rev. C 11/02TO-203AB (DO-5)SD512Bulletin PD-2.327 rev. C 11/02T J Max. Junction Temperature Range -65 to 150°C T stgMax. Storage Temperature Range-65 to 150°C R thJC Max. Thermal Resistance Junction1.0°C/W DC o peration * See Fig. 4to Case R thCS Typical Thermal Resistance, Case to0.25°C/WMounting surface , smooth and greasedHeatsink wt Approximate Weight 15 (0.53)g (oz.)TMounting T orque Min.23 (20)Non-lubricated t hreads Max.46 (40)Case S tyleDO-203AB(DO-5)JEDECKg-cm (Ibf-in)Thermal-Mechanical SpecificationsParametersSD51UnitsConditionsV FMMax. Forward Voltage Drop (2)0.58V @ 35A * See Fig. 10.66V @ 60A 0.86V @ 120A 0.75V @ 120A I RM Max. Reverse Leakage Current (2)50mA T J = 25 °C * See Fig. 2200mA T J = 125 °CC T Max. Junction Capacitance 2900pF V R = 5V DC , (test signal range 100Khz to 1Mhz) 25 °C L STypical Series Inductance7.5nH Measured from top of terminal to mounting planedv/dt Max. Voltage Rate of Change10000V/ µs(Rated V R )V R = rated V RElectrical SpecificationsParametersSD51UnitsConditions(2) Pulse Width < 300µs, Duty Cycle < 2%T J = 150 °C T J = 25 °C I F(AV)Max. Average Forward Current60A 50% duty cycle @ T C = 90°C, rectangular wave form * See Fig. 5I FSMMax. Peak One Cycle Non-Repetitive 800A60Hz half cycle sine wave Surge Current * See Fig. 7or 5ms rectangular pulseParametersSD51 UnitsConditionsAbsolute Maximum RatingsFollowing any rated load condition and with rated V RRM appliedPart numberSD51V RMax. DC Reverse Voltage (V)V RWM Max. Working Peak Reverse Voltage (V)45(1)Voltage Ratings* For Additional Informations and Graphs, Please See the 50HQ Series(1) For SD51 V RWM and V RRM = 45V @ T J = 25°C , =35V @ T J = 150°CSD513Bulletin PD-2.327 rev. C 11/02SD514Bulletin PD-2.327 rev. C 11/024812160102030405060708090A l l o w a b l e C a s e T e m p e r a t u r e - (°C )A v e r a g e F o r w a r d C u r r e n t - I (A )F (A V)5101520253004080120160200A v e r a g e P o w e r L o s s - (W a t t s )F (A V )A v e r a g e F o r w a r d C u r r e n t - I (A )Fig. 5 - Maximum Allovable Case TemperatureVs. Average Forward CurrentFig. 6 - Forward Power Loss Characteristics10100100010100100010000pF S MN o n -R e p e t i t i v e S u r g e C u r r e n t - I (A )S q u a r e W a v e P u l s e D u r a t i o n - t (m i c r o s e c )Fig. 7 - Max. Non-Repetitive Surge CurrentIR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105TAC Fax: (310) 252-7309Visit us at for sales contact information. 11/02Data and specifications subject to change without notice.This product has been designed for Industrial Level.Qualification Standards can be found on IR's Web site.分销商库存信息: VISHAYSD51。
1439-3;1439-4;中文规格书,Datasheet资料
PLATING Gold/Gold Tin/Tin Tin/Gold
PLATING OPTIONS
CONTACT
BODY SPRING
Gold
Gold
Tin/Lead Tin/Lead
Tin/ Lead
Gold
RoHS Compliant
Non-Compliant
.015 (.38) - .021 (.53) PIN - PRESS FIT
contact maintains retention after multiple insertions • Ideal for mounting transistors, resistors, diodes, IC’s and similar miniature components • Custom micro jacks manufactured to your specifications • Other platings available upon request
1641A 1641B 1641C .122 (3.1)
NON-RoHS
Mtg.
GOLD/GOLD TIN/TIN TIN/GOLD Hole
CAT. NO. CAT. NO. CAT. NO. Dia.
1697 1698 1699 .063 (1.60)
.025 (.64) - .037 (.94) PIN - SOLDER MOUNT
6-FINGER CLOSED ENTRY CONTACT
GOLD/GOLD TIN/TIN TIN/GOLD Hole
CAT. NO. CAT. NO. CAT. NO. Dia.
1603 1606 1607 .052 (1.32)
SMP1302-085LF;中文规格书,Datasheet资料
SMP1302-085LF
SMP1302-085LF
S1631
Microstrip Mount
Land Pattern
2X 0.60 Part Outline SMP1302-085LF Exposed Soldering Area Typ. 2X 0.27 2X 0.55
Thermal Via
Pin 1 Pin 2 R0.20 2X 0.25 Pin 3
High Power Switch Design Application
A T-R switch incorporating SMP1302 PIN diodes covering 2.0155 GHz to 2.0195 GHz has been designed and tested. The switch operated safely at transmitter power of 41dBm CW (12.6 W) with low insertion loss (0.42 dB) and high receiver isolation (37 dB). 1 dB compression occurred at higher than 50 dBm. In the receive state the switch performed with 0.45 dB insertion loss and 37.8 dB transmitter isolation. The circuit is based on a quarter wave design utilizing two shunt connected SMP1302 diodes. In the transmit state the Bias 1 is set at 0 mA and Bias 2 is set at 50 mA; in the receive state Bias 1 is set at 50 mA and Bias 2 is set at 0 mA.
BSS64;中文规格书,Datasheet资料
50
100
1
10 100 I C - COLLECTOR CURRE NT (mA)
200
/
BSS64
NPN General Purpose Amplifier
(continued)
Typical Characteristics
1 0.8
β = 10
V BEON - BASE EMITTER ON VOLTAGE (V)
SMALL SIGNAL CHARACTERISTICS
fT Cob Current Gain - Bandwidth Product Output Capacitance IC = 4.0 mA, VCE = 10, f = 35 MHz VCB = 10 V, f = 1.0 MHz 60 5.0 MHz pF
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
80 120 5.0 200 -55 to +150
Units
V V V mA °C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
ORD211-1015;ORD211-1520;ORD211-2030;中文规格书,Datasheet资料
99.9
99
95
90 80 70 60 50 40 30 20 10
5 1
0.1 0
(25Hz: 100AT energized)
0.1
0.2 0.3 0.4
ms
Bounce time
(4) Resonant frequency
99.9
99
95 90 80 70 60 50 40 30 20 10
5 1
Pull-in ValueɾDrop-out Value
50
40
30 PI
20 DO
10
Contact resistance
0 mW
80
CR 60
40 Before test
After test
n ENVIRONMENTAL CHARACTERISTICS (1) Temperature characteristics
10
Contact resistance
0 mW
80
CR 60
40 Before test
http:///
After test
Contact resistance
Pull-in ValueɾDrop-out Value
Contact resistance
Pull-in ValueɾDrop-out Value
20 DO
10
Contact resistance
0
mW 80
CR 60
40 Before test
After test
(4) High temperature storage test
AT 60
(+125ˆ-500H)
74270118;中文规格书,Datasheet资料
Bezeichnung :description :Eigenschaften / properties Wert / valueEinheit / unitTol.Impedanz @ 1 Wg./impedance @ 1 turn Impedanz @ 1 Wg./impedance @ 1 turnImpedanz @ 2 Wg./impedance @ 2 turn Impedanz @ 2 Wg./impedance @ 2 turn33%+ 20°C+ 140°C <= ø 12,3SMU Update 06-06-28LF RoHS update 04-10-11RTUpdate 02-04-17JH Neugestaltung00-12-06NameÄnderung / modificationDatum / date100 mm100 MHz25 MHz 25 MHz typ.± 25%Z typ..............................................................................................................................................................................................................................................Würth ElektronikHP 4191 B für/for Z und/and material 16092A - Klemme / clamp G Eigenschaften / general specifications:Z70Z D Prüfgeräte / test equipment:100100 MHzΩ± 25%30ΩTOROIDAL FERRITEWürth Elektronik eiSos GmbH & Co. KGD-74638 Waldenburg · Max-Eyth-Strasse 1 - 3 · Germany · Telefon (+49) (0) 7942 - 945 - 0 · Telefax (+49) (0) 7942 - 945 - 400Geprüft / checked 170ZΩBasismaterial / base material:Curietemperatur / curie temperature:AWG26 - ø 0,5mm - Länge/length:ΩDatum / date...........................................................................Unterschrift / signature Kontrolliert / approvedTestbedingungen / test conditionsBetriebstemp. / operating temperature: -25°C ~ + 125°CF Werkstoffe & Zulassungen / material & approvals:3 W 800für Kabeldurchm. / for cable diameter [mm]:Lagertemperatur / storage temperature: -55°C ~ + 125°C Kunde / customerFreigabe erteilt / general release:CB Elektrische Eigenschaften / electrical properties:E Testbedingungen / test conditions:Luftfeuchtigkeit / humidity:Umgebungstemperatur / temperature:Bezeichnung :description :A:B:SMU Update 06-06-28LF RoHS update 04-10-11RTUpdate 02-04-17JH Neugestaltung00-12-06NameÄnderung / modificationDatum / dateGeprüft / checked Kontrolliert / approvedWürth Elektronik eiSos GmbH & Co. KGD-74638 Waldenburg · Max-Eyth-Strasse 1 - 3 · Germany · Telefon (+49) (0) 7942 - 945 - 0 · Telefax (+49) (0) 7942 - 945 - 400Würth Elektronik........................................................................................................................................................................................................................................................................................................................Datum / dateUnterschrift / signature H Impedanzverlauf / impedance curve:2 x durch Bohrung Ferrit / 2 x times through ferriteFreigabe erteilt / general release:Kunde / customer1 x durch Bohrung Ferrit / 1 x times trough ferriteTOROIDAL FERRITEDATUM / DATE : 2006-06-28This electronic component has been designed and developed for usage in general electronic equipment. Before incorporating this component into any equipment where higher safety andreliability is especially required or if there is the possibility of direct damage or injury to human body, for example in the range of aerospace, aviation, nuclear control, submarine, transportation, (automotive control, train control, ship control), transportation signal, disaster prevention, medical, public information network etc, Würth Elektronik eiSos GmbH must be informed before the design-in stage. In addition, sufficient reliability evaluation checks for safety must be performed on every electronic component which is used in electrical circuits that require high safety and reliability functions or performance.分销商库存信息: WURTH-ELECTRONICS 74270118。
SD055-23-21-211;中文规格书,Datasheet资料
250
300
350
400
450
500
550
600
650
700
750
800
850
900
950
* 1/16 inch from case for 3 seconds max.
分销商库存信息:
ADVANCED-PHOTONIX SD055-23-21-211
TO-18 PACKAGE
.0006 [0.152] GAP
FEATURES
• • • • Low noise Red enhanced High shunt resistance High response
DESCRIPTION
The SD 055-23-21-211 is a red enhanced quad-cell silicon photodiode used for nulling, centering, or measuring small positional changes packaged in a hermetic TO-18 metal package.
SYMBOL VBR TSTG TO TS PARAMETER Reverse Voltage Storage Temperature Operating Temperature Soldering Temperature* -55 -40 MIN MAX 50 +150 +125 +240 UNITS V °C °C °C
SPECTRAL RESPONSE
1000
1050
1100
Wavelength (nm)
ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C UNLESS OTHERWISE NOTED
原材料采购规范
原材料采购 (检验) 规范1．电线电缆用聚氯乙烯塑料................................1~3 2．阻燃聚氯乙烯塑料......................................4~5 3．可交联低密度聚乙烯电力电缆绝缘塑料.....................6～7 4．交联聚乙烯电缆用半导电屏蔽料.. (8)5．架空绝缘电缆用黑色可交联聚乙烯绝缘料...................9～11 6．1kV及以下电线电缆用硅烷交联聚乙烯绝缘料 (12)7．额定电压10kV及以下架空电缆用黑色耐候性聚乙烯绝缘料 (13)8．电缆用铜带 (14)9．铠装电缆用涂漆钢带.....................................15～16 10．铠装电缆用镀锌钢带. (17)11．铠装电缆用镀锌低碳钢丝.................................18~20 12．电缆用聚丙烯网状撕裂纤维. (21)13．电缆用阻燃聚丙烯网状撕裂纤维 (22)14．发泡型聚乙烯扇形填充条.................................23～24 15．聚氯乙烯带 (25)16．电线电缆用无纺布带 (26)17．电线电缆用特种阻燃无纺布带.............................27～28 18．电线电缆用耐火云母带...................................29~30 19．硅烷交联用聚烯烃半导电屏蔽电缆料.. (31)20．热塑型聚烯烃半导电屏蔽电缆料 (32)21．电缆用聚酯带 (33)22．热塑性无卤低烟阻燃聚烯烃电缆料.........................34～35 23．无卤低烟高阻燃玻璃纤维带...............................36~37 24．无卤低烟阻燃玻璃纤维填充绳.. (38)25．线缆用聚丙烯绕包带 (39)26．计算机电缆用铝塑复合带·································40～41 27．电缆和光缆用阻水带·····································42～45 28．电线电缆用黑色聚乙烯塑料·······························46～47。
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SPECTRAL RESPONSE
1000
1050
1100
Wavelength (nm)
ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C UNLESS OTHERWISE NOTED
SYMBOL ID RSH CJ lrange R VBR NEP tr CHARACTERISTIC Dark Current Shunt Resistance Junction Capacitance Spectral Application Range Responsivity Breakdown Voltage Noise Equivalent Power Response Time** TEST CONDITIONS VR = 5 V VR = 10 mV VR = 0 V, f = 1 MHz VR = 5 V, f = 1 MHz Spot Scan l= 633nm, VR = 0 V l= 900nm, VR = 0 V I = 10 μA VR = 0V @ l=950nm RL = 50 Ω,VR = 0 V RL = 50 Ω,VR = 10 V MIN 350 TYP 0.6 MAX 3.5 UNITS nA MW pF 1100 0.36 0.55 50 2.5x10-14 190 13 nm A/W V W/ √ Hz nS
TO-46 PACKAGE
TO-5 PACKAGE
FEATURES
• • • • Low noise Red enhanced High shunt resistance High response
DESCRIPTION
The SD 085-23-21-021 is a red enhanced quad-cell silicon photodiode used for nulling, centering, or measuring small positional changes packaged in a hermetic TO-5 metal package.
0.70 Responsivity (A/W) 0.60 0.50 0.40 0.30 0.20 0.10 0.00
APPLICATIONS
• Emitter Alignment • Position sensing • Medical and Industrial
ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED
45 9
350 0.32 0.50
**Response time of 10% to 90% is specified at 660nm wavelength light.
Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice.
Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 •
/
1150
CHIP DIMENSIONS INCH [mm]
A B 5 C D SCHEMATIC
3 4 1 2
CHIP DIMENSIONS INCH [mm]
.148 [3.76] SQUARE C D B A .0004 [0.010] GAP .0004 [0.010] GAP
4X .059 [1.50
300
350
400
450
500
550
600
650
700
750
800
850
900
950
* 1/16 inch from case for 3 seconds max.
分销商库存信息:
ADVANCED-PHOTONIX SD085-23-21-021
Red Enhanced Quad Cell Silicon Photodiode SD 085-23-21-021
PACKAGE DIMENSIONS INCH [mm] PACKAGE DIMENSIONS INCH [mm]
.130 [3.30] .120 [3.05] .075 [1.90] 5X Ø.018 [0.46] Ø.225 [5.72] Ø.215 [5.46] 86° VIEWING Ø.330 [8.38] ANGLE Ø.320 [8.13] Ø.200 [5.08] PIN CIRCLE 4 CHIP PERIMETER Ø .362 [9.19] Ø .357 [9.07] 5X .50 [12.7] MIN 3 5 B A C D 2 1 45°
SYMBOL VBR TSTG TO TS PARAMETER Reverse Voltage Storage Temperature Operating Temperature Soldering Temperature* -55 -40 MIN MAX 50 +150 +125 +240 UNITS V °C °C °C