FS7KM-14A中文资料

MITSUBISHI Nch POWER MOSFET
FS7KM-14A
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 50 5 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL)
2.0
1.0
0
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
TC = 25°C Pulse Test
DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω)
40
4
30
ID = 14A
3
VGS = 10V 20V
20
7A 3A
2
10
1 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A)
TC = 25°C 75°C
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE yfs (S)
16
3 2 100 7 5 3 2
125°C
12
8
4
0
0
4
8
12
16
20
10–1 –1 10
2 3
5 7 100
2 3
5 7 101
GATE-SOURCE VOLTAGE VGS (V)
¡VDSS ................................................................................ 700V ¡rDS (ON) (MAX) .............................................................. 1.82Ω ¡ID ............................................................................................ 7A ¡Viso ................................................................................ 2000V
VDD = 200V, ID = 3A, VGS = 10V, RGEN = RGS = 50Ω IS = 3A, VGS = 0V Channel to case
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 50
POWER DISSIPATION PD (W) DRAIN CURRENT ID (A)
Unit V V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W
Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance
Crss
101 VGS = 0V 7 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V)
5 7 101
DRAIN CURRENT ID (A)
Feb.1999
元器件交易网
MITSUBISHI Nch POWER MOSFET
Conditions
Ratings 700 ±30 7 21 30 –55 ~ +150 –55 ~ +150 2000 2
Unit V V A A W °C °C Vrms g
Feb.1999
AC for 1minute, Terminal to case Typical value
元器件交易网
0
0
4
8
12
16
20
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS (TYPICAL) 20
TC = 25°C VDS = 50V Pulse Test
FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 101 VDS = 10V 7 Pulse Test 5
MITSUBISHI Nch POWER MOSFET
FS7KM-14A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter
CASE TEMPERATURE TC (°C) OUTPUT CHARACTERISTICS (TYPICAL) 20
VGS = 20V TC = 25°C Pulse Test
10
PD = 30W
VGS = 20V 10V
DRAIN CURRENT ID (A)
16
10V 6V
DRAIN CURRENT ID (A)
SWITCHING TIME (ns)
CAPACITANCE Ciss, Coss, Crss (pF)
103 7 5 3 2 102 7 5 3 2 Tch = 25°C
f = 1MHZ
3 2
td(on)
Coss
102 7 5 3 2 101 10–1 2 3 5 7 100 2 3
tr td(off) tf
q
e
TO-220FN
APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc.
MAXIMUM RATINGS
MAXIMUM SAFE OPERATING AREA 3 2 101 7 5 3 2 100 7 5 3 2 10–1
tw = 10ms 100ms
40
30
1ms 10ms TC = 25°C Single Pulse 100ms
20
10
0
0
50
100
150
200
7 5 DC 3 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL)
8
TC = 25°C Pulse Test
12
6
5V
8
5V
4
4.5V 4V
4
4V PD = 30W
2
0
0
10
20
30
40
50
0
0
4
8
12
16
20
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
元器件交易网
SOURCE CURRENT IS (A)
VGS = 0V Pulse Test
20
Tch = 25°C ID = 7A
16
VDD = 250V
16
TC = 125°C
12
400V 600V
12
75°C
8
8
25°C
4
4
0
0
10
20
30
40
50
0
0
0.8
1.6
2.43.2Fra bibliotek4.0
GATE CHARGE Qg (nC)
DRAIN CURRENT ID (A)
CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 7 5 3 2 103 7 5
Ciss
SWITCHING CHARACTERISTICS (TYPICAL)
Tch = 25°C VDD = 200V VGS = 10V RGEN = RGS = 50Ω
SOURCE-DRAIN VOLTAGE VSD (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C)