2SJ459中文资料

元器件交易网
Ordering number : ENN5423A
2SJ459
P-Channel Silicon MOSFET
2SJ459
Ultrahigh-Speed Switching Applications
Features
•
Package Dimensions
unit : mm 2093A
Case Temperature, Tc -- °C
--5.0 --4.5
IT03689
VGS(off) -- Tc
VDS= --10V ID= --1mA
Forward Transfer Admitance, yfs -- S
7 5
VDS= --10V Cutoff Voltage, VGS(off) -- V
Tc= --25°C
--6
Drain Current, ID -- A
--5
--
Drain Current, ID -- A
--
.0 10
V
--5
V 6.0
25°C
--4
--4
--5.0V
75°C
--3
--3
--4.5V
--4.0V
--2
--2
--1 0 0 --5 --10
--1
VGS= --3.5V
2.0
s
1.65 1.5
Operation in this area is limited by RDS(on).
era
1.0
0.5
--0.01 --1.0
Tc=25°C single pulse
2 3 5 7 --10 2 3 5 7 --100 2 3
0 5 7--1000 IT03694 0 20 40 60 80 100 120 140 160
Marking : J459 *(Note) Care must be taken in handling the 2SJ459 because no protection diode is provided between gate and source.
Switching Time Test Circuit
Ciss, Coss, Crss -- pF
Ciss
1000 7 5 3 2 100 7 5 3 2 10
Coss
Crss
2 --0.1 7 5 0 --0.2
--0.4
Tc=75 °C 25°C --25°C
--0.6 --0.8
3
--1.0
--1.2
--1.4
0
--5
--10
--15
--20
--25
--30 IT03693
Diode Forward Voltage, VSD -- V
IT03692
Drain-to-Source Voltage, VDS -- V
No.5423-3/4
元器件交易网
2SJ459
3 2 --10 7 5
Forward Bias A S O
Drain-to-Source Voltage, VDS -- V
80
Ambient Temperature, Ta -- °C
IT04253
PD -- Tc
Allowable Power Dissipation, PD -- W
70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160
IDP= --16A
10 0µ
2.5
PD -- Ta
ID= --4A
DC
Drain Current, ID -- A
3 2 --1.0 7 5 3 2 --0.1 7 5 3 2
10
op
10 m 0m s s
tio n
1m
s
Allowable Power Dissipation, PD -- W
10µs
2.7
1.4
元器件交易网
2SJ459 Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25°C Conditions Ratings --450 ±30 --4 --16 1.65 70 150 --55 to +150 Unit V V A A W W °C °C
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Sourse Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Diode Reverse Recovery Time Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on) Ciss Coss Crss td(on) tr td(off) tf VSD trr Conditions ID=--10mA, VGS=0 VDS=--360V, VGS=0 VGS=±30V, VDS=0 VDS=--10V, ID=--1mA VDS=--10V, ID=-2A ID=--2A, VGS=--10V VDS=--20V, f=1MHz VDS=--20V, f=1MHz VDS=--20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. IS=--4A, VGS=0 IS=--4A, di / dt=100A / µs --2.0 1.2 2.4 2.0 1500 230 80 35 50 300 80 -1.5 150 195 2.8 Ratings min --450 --1.0 ±100 --3.0 typ max Unit V mA nA V S Ω pF pF pF ns ns ns ns V ns
VDD= --200V VIN 0V --10V VIN PW=10µs D.C.≤1% ID= --2A RL=100Ω
D
VOUT
G
P.G
50Ω
2SJ459
S
No.5423-2/4
元器件交易网
2SJ459
--7
ID -- VDS
--6
ID -- VGS
VDS= --10V
0 --15 --20 IT03686 0 --2.5 --5.0 --7.5 --10.0 --12.5 --15.0 IT03687
Drain-to-Source Voltage, VDS -- V
3.5
Gate-to-Source Voltage, VGS -- V
4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 --50
2 3 5 7
--4.0 --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5
3 2
Tc=
--25
°C
25° C
--1.0 7 5 3 2
C 75°
--0.1 --0.1
2
3
5
7
--1.0
Drain Current, ID -- A
3 2 --10 7 5 3 2 --1.0 7 5
Case Temperature, Tc -- °C
IT03695
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