2N3904_D28Z中文资料

ON CHARACTERISTICS*
hFE DC Current Gain IC = 0.1 mA, VCE = 1.0 V IC = 1.0 mA, VCE = 1.0 V IC = 10 mA, VCE = 1.0 V IC = 50 mA, VCE = 1.0 V IC = 100 mA, VCE = 1.0 V IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA 40 70 100 60 30 300
SWITCHING CHARACTERISTICS
td tr ts tf Delay Time Rise Time Storage Time Fall Time VCC = 3.0 V, VBE = 0.5 V, IC = 10 mA, IB1 = 1.0 mA VCC = 3.0 V, IC = 10mA IB1 = IB2 = 1.0 mA 35 35 200 50 ns ns ns ns
2001 Fairchild Semiconductor Corporation
2N3904/MMBT3904/PZT3904, Rev A
元器件交易网
2N3904 / MMBT3904 / PZT3904
NPN General Purpose Amplifier
(continued)
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
100
1 10 R S - SOURCE RESISTANCE ( kΩ )
100
Current Gain and Phase Angle vs Frequency
50 45 40 35 30 25 20 15 10 5 0 h fe
PD - POWER DISSIPATION (W)
Power Dissipation vs Ambient Temperature
Electrical Characteristics
Symbol Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Base Cutoff Current Collector Cutoff Current IC = 1.0 mA, IB = 0 IC = 10 µA, IE = 0 IE = 10 µA, IC = 0 VCE = 30 V, VEB = 3V VCE = 30 V, VEB = 3V 40 60 6.0 50 50 V V V nA nA
元器件交易网
2N3904 / MMBT3904 / PZT3904
2N3904
MMBT3904
C
PZT3904
C
E C B
E C
TO-92
E
SOT-23
Mark: 1A
B
SOT-223
B
NPN General Purpose Amplifier
This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier.
I C = 1.0 mA
I C = 1.0 mA R S = 200Ω I C = 50 µA R S = 1.0 kΩ I C = 0.5 mA R S = 200Ω
V CE = 5.0V 10
I C = 5.0 mA
8 6 4 2 0 0.1
I C = 50 µA
I C = 100 µA
1 10 f - FREQUENCY (kHz)
VCE(sat) VBE(sat)
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage
0.65
0.2 0.3 0.85 0.95
V V V V
SMALL SIGNAL CHARACTERISTICS
fT Cobo Cibo NF Current Gain - Bandwidth Product Output Capacitance Input Capacitance Noise Figure IC = 10 mA, VCE = 20 V, f = 100 MHz VCB = 5.0 V, IE = 0, f = 1.0 MHz VEB = 0.5 V, IC = 0, f = 1.0 MHz IC = 100 µA, VCE = 5.0 V, RS =1.0kΩ,f=10 Hz to 15.7kHz 300 4.0 8.0 5.0 MHz pF pF dB
125 °C
300
2200 100 0 0.1
- 40 °C
0.05
- 40 °C
1 10 I C - COLLECTOR CURRENT (mA)
100
0.1
1 10 I C - COLLECTOR CURRENT (mA)
100
V - BASE-EMITTER ON VOLTAGE (V) BE(ON)
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
Thermal Characteristics
Symbol
PD RθJC RθJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N3904 625 5.0 83.3 200
ICBO- COLLECTOR CURRENT (nA) 500
CAPACITANCE (pF) 10
Capacitance vs Reverse Bias Voltage
f = 1.0 MHz
100 10 1 0.1
VCB = 30V
5 4 3 2
C obo C ibo
25
50 75 100 125 TA - AMBIENT TEMPERATURE ( °C)
0 20 40 60 80 100 120 140 160 180
1000
1
- CURRENT GAIN (dB)
SOT-223
0.75
θ - DEGREES
TO-92
θ
0.5
SOT-23
0.25
h
V CE = 40V I C = 10 mA 1 10 100 f - FREQUENCY (MHz)
150
1 0.1
1 10 REVERSE BIAS VOLTAGE (V)
100
元器件交易网
2N3904 / MMBT3904 / PZT3904
NPN General Purpose Amplifier
(continued)
Typical Characteristics
元器件交易网
2N3904 / MMBT3904 / PZT3904
NPN General Purpose Amplifier
(continued)
Typical Characteristics
500 400
125 °C
V CE = 5V
VCESAT- COLLECTOR-EMITTER VOLTAGE (V)
fe
0
0
25
50 75 100 TEMPERATURE (o C)
125
150
Turn-On Time vs Collector Current
Max
*MMBT3904 350 2.8 357 **PZT3904 1,000 8.0 125
Units
mW mW/°C °C/W °C/W
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." **Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
TA = 25°C unless otherwise noted
Parameter