ChIP 中文说明书
chipprotocol中文
chipprotocol中⽂CHIP PROTOCOL（基于millipore EZ-CHIP catalog#17-371）：实验原理：在活细胞状态下固定蛋⽩质－DNA复合物，并将其随机切断为⼀定长度范围内的染⾊质⼩⽚段，然后通过免疫学⽅法沉淀此复合体，特异性地富集⽬的蛋⽩结合的DNA⽚段，通过对⽬的⽚断的纯化与检测，从⽽获得蛋⽩质与DNA相互作⽤的信息。
实验步骤：第⼀天：【实验材料准备】：1000ul、100ul、200ul、20ul移液器，⼤、中、⼩号tip，1.5ml EP管，200ul PCR 管。
【实验仪器准备】：台式低温离⼼机，超声仪，电泳设备⼀套，旋转混匀仪，层析柜。
【实验试剂准备】：SDS lysis buffer复温，使其充分溶解，避免沉淀；protease inhibitor cocktail室温下充分解冻；PBS预冷（若使⽤试剂盒提供10xPBS，使⽤前还需⽤去离⼦⽔稀释成1xPBS ⼯作液）。
（⼀）、细胞的甲醛交联与超声破碎*。
1、收集细胞（1-2x10^7），加⼊37%甲醛，使得甲醛的终浓度为1%（0.7%）。
2、室温孵育10min（精确计时）。
3、及时终⽌交联：加10x⽢氨酸终浓度为1x。
混匀后，在室温下放置5min。
4、沉淀细胞（700g 4℃2-5min），⽤冰冷的PBS清洗细胞2次。
5、弃上清（细胞沉淀可以暂时冻存于-80℃备⽤）。
6. 准备裂解液（1ml SDS lysis buffer+5ul protease inhibitor cocktail）；按照细胞量（1x10^7 hela细胞对应1ml SDS lysis buffer）加⼊SDS Lysis Buffer，重悬细胞。
分装成300-400ul1管（裂解产物可以-80℃冻存备⽤）。
7、超声破碎（根据具体情况调整）：普通超声仪：3档冲击15s 冰上放置45s 共5次Bioruptor超声神器：中档冲击15s 停顿45s ≧14次（更均⼀更集中）8、琼脂糖凝胶电泳鉴定：取1x10^5个细胞，加⼊CHIP dilution buffer⾄终体积50ul，进⾏解交联后电泳Option1—a. 加⼊RNase A（10mg/ml）1ul，37℃孵育30分钟。
chip试剂盒17-371说明书翻译
CHIP步骤实验前准备：·处理细胞，将细胞保持在装有20ml培养基的150mm培养皿中。
·冰预冷PBS（第3步）、培养皿（第六步）。
·每个150mm培养皿准备42ml1*PBS(10*PBS +水,冰上预冷。
·预热SDS到室温，确保在细胞裂解之前彻底溶解。
·将protease inhibitor cocktail II放置室温待用。
A体内交联和溶解1、加550 μl 37%的甲醛（或新鲜的%甲醛）到20 ml细胞培养基中进行交联反应，轻轻地晃动混匀。
·甲醛的终浓度为1%。
尽量使用新鲜的甲醛（配置方法见附录B）。
2、)10 min。
3、室温下孵育·不要振荡细胞。
3、取2 ml冰冷的1*PBS于分离管中至于冰上（每个培养皿对应一个），每1ml PBS中加5 ul Protease Inhibitor Cocktail II。
4、加2 ml 10×Glycine到培养皿中将未反应的甲醛消除。
5、晃动混匀并在室温下孵育5 min。
6、将培养皿放在冰上。
7、吸出培养基，尽可能的将培养基去除干净，小心不要扰乱细胞。
8、加20 ml冰冷的1*PBS来洗涤细胞。
9、除去PBS，再用PBS洗涤一次。
10、加2 ml含1×Protease Inhibitor Cocktail II的冷PBS到培养皿中(从第3步得)。
11、将细胞从培养皿刮下来放到离心管中。
》12、4℃，700 g（900~1000 rpm）离心2~5 min沉淀细胞。
13、准备好1 ml(1*107个细胞推荐1ml) SDS Lysis Buffer（含5ul Protease Inhibitor Cocktail II）。
14、除去上清液（此步中的细胞沉淀可以放在-80℃中保存）。
15、用准备好的1 ml SDS Lysis Buffer(含1* Protease Inhibitor Cocktail II）重悬细胞。
贴壁细胞chip实验原理及步骤-概述说明以及解释
贴壁细胞chip实验原理及步骤-概述说明以及解释1.引言1.1 概述概述部分的内容可以是关于贴壁细胞chip的基本介绍和背景信息。
可以参考以下示例进行编写：概述贴壁细胞chip是一种先进的实验平台，用于研究和观察贴壁细胞在特定环境下的行为和反应。
贴壁细胞是指能够附着在固体表面上生长和繁殖的细胞。
在许多生物学和医学研究中，贴壁细胞被广泛应用于细胞生物学、药物筛选、细胞力学以及组织工程等领域。
贴壁细胞chip的概念最早出现在上世纪80年代，其原理基于微流体技术和微型加工技术的结合。
利用微流体通道和微型孔洞，贴壁细胞可以被定向排列在特定位置，从而使得对于细胞的观察和实验更加精确和可控。
与传统细胞培养相比，贴壁细胞chip具有更高的细胞存活率和更好的细胞黏附性能。
贴壁细胞chip的制备需要一系列复杂的步骤和技术，包括微型加工、微流体控制、表面处理等。
通过精确控制微流体的流动和细胞的附着，研究人员可以模拟和重建生物体内的特定环境，以便更好地理解细胞在不同条件下的行为和反应。
贴壁细胞chip在各个领域都有广泛的应用。
在细胞生物学中，它可以用于观察细胞的形态学、生长动力学、迁移和侵袭能力等。
在药物筛选领域，贴壁细胞chip可以用于评估药物的毒性和疗效。
此外，贴壁细胞chip 还可以应用于细胞力学研究，如细胞的拉伸、压缩和应变等。
最近，贴壁细胞chip也被用于组织工程的研究，以构建和培养人工组织。
通过本文对贴壁细胞chip的原理和制备步骤进行详细介绍，希望能够提高读者对贴壁细胞chip的了解，并推动其在科学研究和医学应用中的发展。
同时，本文还将对实验原理的重要性、操作要点以及未来的发展方向等进行探讨和总结。
1.2 文章结构文章结构是指文章整体的组织方式和框架。
一个良好的文章结构可以使读者更好地理解和接受所传达的内容。
本文的结构分为引言、正文和结论三个部分。
引言部分首先概述了贴壁细胞chip实验的背景和意义，引发读者对该实验的兴趣。
ESP32 Chip Revision v3.0 用户指南说明书
ESP32 Chip Revision v3.0 User GuideVersion 1.3Espressif SystemsCopyright © 2022About This GuideThis document describes differences between chip revision v3.0 and previous ESP32 chiprevisions.Release NotesDocumentation Change NotificationEspressif provides email notifications to keep customers updated on changes totechnical documentation. Please subscribe at https:///en/subscribe .CertificationDownload certificates for Espressif products from https:///en/certificates . DateVersion Release notes 2020.01V1.0Initial release.2020.07V1.1Added item 6 to Chapter 1 Design Changes in ECO V3.2022.10v1.2Replaced “ECO” with “Chip Revision” Renamed this document as “ESP32 Chip Revision v3.0 User Guide”2022.11v1.3Added item 1 to Chapter 1 Design Changes in ECO V3.Table of Contents................................................................................. 1.Design Changes in Chip Revision v3.0 1............................................................................................... 2.Impact on Customer Projects 2..........................................................................e Case 1: Hardware and Software Upgrade 2........................................................................................e Case 2: Hardware Upgrade Only 2................................................................................................................ bel Specification 3............................................................................................................. 4.Ordering Information 41. Design Changes in Chip Revision v3.0 1.Design Changes in ChipRevision v3.0Espressif has released ESP32 chip revision v3.0 that features wafer-level changes basingon previous ESP32 chip revisions. The design changes introduced on the ESP32 chiprevision v3.0 are:1.Fixed "Due to the flash start-up time, a spurious watchdog reset occurs when ESP32 ispowered up or wakes up from Deep-sleep". Details of the issue can be found in item 3.8in ESP32 Series SoC Errata.2.PSRAM Cache Bug Fix: Fixed “When the CPU accesses the external SRAM in a certainsequence, read & write errors can occur”. Details of the issue can be found in item 3.9 inESP32 Series SoC Errata.3.Fixed “When each CPU reads certain different address spaces simultaneously, a readerror can occur”. Details of the issue can be found in item 3.10 in ESP32 Series SoCErrata.4.Optimized 32.768 KHz crystal oscillator stability. The issue was reported by client thatthere is a low probability that on chip revision v1.0 hardware, the 32.768 KHz crystaloscillator couldn’t start properly.5.Fixed Fault injection issues regarding secure boot and flash encryption are fixed.Reference: Security Advisory concerning fault injection and eFuse protections(CVE-2019-17391) & Espressif Security Advisory Concerning Fault Injection and SecureBoot (CVE-2019-15894)6.Improvement: Changed the minimum baud rate supported by the TWAI module from 25kHz to 12.5 kHz.7.Allowed Download Boot mode to be permanently disabled by programming new eFusebit UART_DOWNLOAD_DIS. When this bit is programmed to 1, Download Boot modecannot be used and booting will fail if the strapping pins are set for this mode. Softwareprograms this bit by writing to bit 27 of EFUSE_BLK0_WDATA0_REG, and reads this bitby reading bit 27 of EFUSE_BLK0_RDATA0_REG. Write disable for this bit is shared withwrite disable for the flash_crypt_cnt eFuse field.12022.11 Espressif /52. Impact on Customer Projects 2.Impact on Customer ProjectsThis section is intended to help our customers to understand the impact of using chiprevision v3.0 in a new design or replacing older version SoC with chip revision v3.0 inexisting design.e Case 1: Hardware and Software UpgradeThis is the use-case where the new project is being initiated or upgrade for hardware andsoftware in an existing project is a possible option. In such a case, the project can benefitfrom protection against fault injection attack and can also take advantage of newer secureboot mechanism and PSRAM cache bug fix with slightly enhanced PSRAM performance.1.Hardware Design Changes:Please follow the latest ESP32 Hardware Design Guidelines. For 32.768 KHz crystaloscillator stability issue optimization, please refer to Section Crystal Oscillator for moreinformation.2.Software Design Changes:1)Select Minimum configuration to Rev3: Go to menuconfig > Conponent config >ESP32-specific, and set the Minimum Supported ESP32 Revision option to “Rev3”.2)Software version: Recommend to use RSA-based secure boot from ESP-IDF v4.1and later. ESP-IDF v3.X Release version can also work with application with originalsecure boot V1.e Case 2: Hardware Upgrade OnlyThis is the use-case where customers have existing project which can allow hardwareupgrade but software needs to remain the same across hardware revisions. In this case theproject gets benefit of security to fault injection attacks, PSRAM cache bug fix and32.768KHz crystal oscillator stability issue. The PSRAM performance continues to remainthe same though.1.Hardware Design Changes:Please follow latest ESP32 Hardware Design Guidelines.2.Software Design Changes:Client can continue to use the same software and binary for deployed product. Thesame application binary will work on both chip revision v1.0 and chip revision v3.0.3. Label Specification bel SpecificationThe label of ESP32-D0WD-V3 is shown below:The label of ESP32-D0WDQ6-V3 is shown below:4. Ordering Information 4.Ordering InformationFor product ordering, please refer to: ESP Product Selector.Disclaimer and Copyright NoticeInformation in this document, including URL references, is subject to change without notice.THIS DOCUMENT IS PROVIDED AS IS WITH NO WARRANTIES WHATSOEVER,INCLUDING ANY WARRANTY OF MERCHANTABILITY , NON-INFRINGEMENT, FITNESS FOR ANY PARTICULAR PURPOSE, OR ANY WARRANTY OTHERWISE ARISING OUT OF ANY PROPOSAL, SPECIFICATION OR SAMPLE.All liability, including liability for infringement of any proprietary rights, relating to use of information in this document is disclaimed. No licenses express or implied, by estoppel or otherwise, to any intellectual property rights are granted herein.The Wi-Fi Alliance Member logo is a trademark of the Wi-Fi Alliance. The Bluetooth logo is a registered trademark of Bluetooth SIG.All trade names, trademarks and registered trademarks mentioned in this document are property of their respective owners, and are hereby acknowledged. Copyright © 2022 Espressif Inc. All rights reserved.Espressif IoT Team。
(完整word版)ChIP实验流程整理
1、ChIP实验用的苗是正常光照条件下生长的四周大的苗子，取1.5克嫩苗组织,放入50ml 1％甲醛溶液中,抽真空交联。
2、用2。
5ml 2M甘氨酸溶液停止交联反应。
3、水洗苗子数次，然后将苗用吸水纸吸干，液氮碾磨，然后用25ml提取缓冲液1重悬.extraction buffer I0。
4 M sucrose,10 mM Tris-HCl， pH 8，10 mM MgCl2,5mM b-mercaptoethanol，0.1mM phenylmethylsulfonyl fluoride [PMSF］,1＊ protease inhibitor； Roche)，4、用神奇滤器或者是金属筛过滤，然后4000rpm， 4℃离心20分钟5、用1ml提取缓冲液2,重悬沉淀物,14，000 rpm ,4℃离心10分钟。
extraction buffer II0.25 M sucrose,10 mM Tris—HCl， pH 8,10mMMgCl2，1％Triton X-100，5mM b—mercaptoethanol,0。
1mM PMSF,1＊protease inhibitor)6、用300ul提取缓冲液3,重悬沉淀物,14，000 rpm ，4℃离心60分钟.extraction bufferIII1。
7Msucrose,10mMTris-HCl， pH8,0.15%Triton X—100，2mMMgCl2,5mMb-mercaptoethanol，0.1mM PMSF,1＊protease inhibitor)7、粗核提取物用200ul裂解缓冲液重悬,在冰浴上孵育10分钟，以充分裂解细胞.8、超声处理，以剪切基因组DNA,使DNA大部分断裂成200-1000bp大小，如果能把大部分控制在400-800bp 则更佳。
超声过程中请一定注意要保持样品处于冰浴中，并且处于较低温度。
超声剪切的效果在后续去交联后可以用常规的DNA琼脂糖凝胶电泳检测。
ChIP实验精讲(做科研的必看)
ChIP实验精讲(做科研的必看)染色质免疫共沉淀（ChIP）概述ChIP：chromatinimmunoprecipitation assay，染色质免疫沉淀技术。
研究蛋白质与DNA在染色质环境下的相互作用是阐明真核生物基因表达机制的基本途径。
ChIP是目前唯一研究体内DNA与蛋白质相互作用的方法原理在活细胞状态下固定“蛋白质-DNA”复合物，并将其随机切断为一定长度范围内的染色质小片段，然后通过免疫学方法沉淀此复合体，特异性地富集目的蛋白结合的DNA片段，通过对目的片断的纯化与检测，从而获得蛋白质与DNA相互作用的信息。
ChIP应用1、检测体内反式因子与DNA的动态作用，研究组蛋白的各种共价修饰与基因表达的关系；2、CHIP与基因芯片相结合建立的CHIP-on-ChIP 方法已广泛用于特定反式因子靶基因的高通量筛选；3、CHIP与体内足迹法相结合，用于寻找反式因子的体内结合位点；4、RNA-CHIP用于研究RNA在基因表达调控中的作用。
试验流程一、交联染色质免疫沉淀技术1. 细胞甲醛交联和收集注意事项：①需要优化甲醛使蛋白质和DNA交联的时间。
②交联的时间很关键。
交联的时间一般为2-30 分钟。
③交联过度会降低抗原的可结合性和超声的效率，也会被遮盖抗原的表位。
④甘氨酸可抑制甲醛的作用，终止交联反应。
1.1 取1直径10cm培养皿的细胞。
加入甲醛至终浓度为0.75%（V/V），使蛋白和DNA 交联。
1.2 室温下，轻摇10 分钟。
1.3 加入甘氨酸至终浓度为125 mM，室温下放置5 分钟，以终止交联。
1.4 吸去培养基，用冰冷PBS 洗细胞2 次。
1.5 使用细胞刮刀，加入5ml 冰冷PBS，刮下细胞，收集至一个50 ml 离心管中。
1.6 再用 3 ml 冰冷PBS 洗培养皿2次，至50ml 离心管中。
1.7 4℃，1000 g，离心5分钟收集细胞。
1.8 吸弃上清，用SDSLysis Buffer重悬沉淀（每1 X 107 个细胞加800 μl）。
PTG实验室 ChIP 实验技巧说明书
TECH TIPS FOR SUCCESSFUL ChIP EXPERIMENTSNew to ChIP or just want to improve?Our tech tips will help you achieve successful ChIP experiments.CONTENTSImmunoprecipitation TypesChIP OverviewTech Tips For ChIP ExperimentsTip 1: Always keep cells/tissue on iceTip 2: Under/over cross-linkingTip 3: Chromatin shearing and sonicationTip 4: Bead and primary antibody choiceTip 5: IP efficiency in reverse cross-linking IPTip 6: DNA elution and purificationTip 7: Analysis on Immunoprecipitated DNAContact Us 345–1011IMMUNOPRECIPITATION TYPES There are several types ofimmunoprecipitation:–IP used to isolate a single protein–Co-Immunoprecipitation (Co-IP)–Chromatin Immunoprecipitation (ChIP)–RNA Immunoprecipitation (RIP)ChIP OVERVIEW –ChIP provides a live cell picture ofthe native chromatin structure andfactors bound to genes in differentfunctional states.–ChIP methodology involves protein –DNA cross-linking.–Isolated, crude chromatin is sonicated to small fragments, usually with anaverage size of 300–1000 bp.–Protein-specific antibodies are used to immunoprecipitate fragmentsof chromatin.TECH TIPS FOR ChIP EXPERIMENTSChIP Tip 1: ChIP Tip 2:Always keep cells/tissue on ice–Temperature is critical. Perform cell lysis at 4°C.Keep the samples ice-cold and use ice-cold buffers.Under/over cross-linkingPlease note: When using paraformaldehyde, ensure that it is freshly prepared (final concentration of 1%–1.5%).–Under cross-linking can prevent the disassociation of protein–DNA complexes and result in poor yield.–Over cross-linking can mask epitope sites crucial for antibody binding, prevent chromatin shearing, and inhibit the successful uncross-linking of the protein–DNA complex.TECH TIPS FOR ChIP EXPERIMENTSChIP Tip 3:Chromatin shearing and sonication–Avoid large fragments in the tissue suspension.–Pipette with cut tips for better homogenization.–Ensure the sonicator probe is not in contact withthe tube wall.–Increase the number of sonication steps; however,avoid increasing the time (or the power) of eachstep as this may overheat the sample and lead toloss of antigenicity.–Add ice to the sonicator to avoid the sample overheating.TECH TIPS FOR ChIP EXPERIMENTSChIP Tip 4:Bead and primary antibody choice (Beads)–Always fully resuspend beads by vortexing before pipetting.–Always store at 4°C and never allow beads to dry out.–Check the subclass of your antibody is compatible withProtein A/G.Affinity of human immunoglobulins to Protein A and G Binding Capacity:++++ Strong Binding +++/++ Medium Binding Variable/– Weak orNo BindingThe full table of human, mouse, rat and guinea pig immunoglobins can be found in our technical guide “Overview & Technical Tips: Immunoprecipitation”.To download click hereTECH TIPS FOR ChIP EXPERIMENTSChIP Tip 4:Bead and primary antibody choice (Antibody)–Verify your antibody of interest is ChIP validated.–Insufficient amount of antibody can result in notenough material for successful PCR analysis.–Too much antibody can increase PCR background.Negative ChIP controls–Use non-immune IgG in the IP incubation mix fromthe same species the antibodies were produced in.–Incubate IP fraction with beads (without antibody coating).TECH TIPS FOR ChIP EXPERIMENTSChIP Tip 5: ChIP Tip 6:IP efficiency in reverse cross-linking IP–Usually, a 15-minute incubation at 95°C is sufficient.Some samples require Proteinase K treatment for four or more hours at 65°C.DNA elution and purification–Use different washing buffers (low & high salt, LiCl nd TE buffers).–While using a commercial purification column, check the column is completely dry after the wash step as any leftover moisture will inhibit elution.–Make sure the elution buffer is placed directly onto the silica membrane and allowed to adsorb for atleast one minute.TECH TIPS FOR ChIP EXPERIMENTSChIP Tip 7:Analysis on Immunoprecipitated DNA–To avoid variations between replicates, add the sameamount of protein G/A-agarose or magnetic beads for allsamples. Ensure beads are well suspended while pipetting.–Complete the elution of chromatin from protein G/A beads.Elution is optimal at 65°C with frequent mixing to keep beadssuspended in solution (~10 minutes).Please note: A weak PCR signal or no DNA amplification shownin the samples may be due to an inadequate primer result in thePCR amplified region spanning the nucleosome-free region.11Tech Tips For Successful ChIP Experiments CONTACT US*********************************************************Available 24 hours via Live Chat and 9–5 (CDT) via phone.Proteintech Group Proteintech Europe Proteintech Support US Head OfficeUnited KingdomChina OfficePlease visit us at for more information about our antibodies and technical tips.。
UT系列V-chip铝电解电容器商品说明书
供应商：客户：MESSRS制品名贴片型铝电解电容器220UF35V 10*10.2100UF80V10*10.233UF100V 10*10.22000HPRODUCT NAME:V-chip Aluminum Electrolytic Capacitors 系列：UT SERIES:UT Series,105︒C,±20%,Standard规格料号:（详见电气参数及料号）DESCRIPTIONMaterial NO:（See electrical parameters and material number）客户承认栏发行确认栏APPROVAL COLUMN APPROVED BY审核CHECKED BY 确认APPROVED BY 审核CHECKED BY 确认APPROVED BY何远娣林洁芝发行日期Release Date:2021年01月11日发行编号：Issue NO:CU20210111006承认书SPECIFICATIONS FOR APPROV AL签认后,敬请惠返一份,多谢！Please chop,sign and return to us a copy after approval.Thank you!UT SERIES V-chip Aluminum Electrolytic Capacitors1.范围:Scope适用“UT系列”立式片式铝电解电容器This specification covers“UT Series”V-chip aluminum electrolytic capacitors.2.参考标准:Reference Standard国际标准IEC60384与日本工业标准JIS C-5101The international standard IEC60384and Japanese industrial standard JIS C-5101.3.环境保护标准：Environmental Protection Standard遵照欧盟指令2002/95/EC.Comply with the EU directive2002/95/EC.4.使用温度范围：Operating Temperature Range-55︒C~+105︒C5.电压范围：Voltage RangeDC:4~100V6.容量范围：Capacitance RangeCAP:0.47~2200μF7.容量偏差范围：Capacitance Tolerance±20%at120Hz,+20︒C8.漏电流：Leakage Current2分钟后读数（After2minutes of reading）I≤0.01CV or3(μA)whichever is greater9.损耗角：Tanδ测试频率：120Hz，温度：20℃Measurement frequency:120Hz,Temperature:20︒CRated Voltage(V)4 6.310162535506380100 Tanδ(max.)0.350.300.240.200.180.160.140.140.140.1410.低温特性：Stability at Low Temperature测试频率：120Hz（Measurement frequency:120Hz）Low Temperature Stability Impedance Ratio(MAX)Rated Voltage(V)4 6.310162535506380100 Z-25︒C/Z+20︒C（120Hz）＜Ф87432222222≥Ф87543222222UT SERIES V-chip Aluminum Electrolytic Capacitors120Hz Z-40℃/Z+20℃（120Hz）＜Ф815884433333≥Ф815108643333311．耐久性：Load Life105℃施加额定电压2000小时后，放置16小时后，电容器应满足以下要求After applying rated voltage with max ripple current for2000hrs at+105℃,and then resumed 16hours,the capacitors Shall meet the following requirements.容量变化率Capacitance Change ±30%初始值内Within±30%of initial value损耗角正切值Dissipation Factor ≤200%初始规定值Not more than200%of the specified value漏电流Leakage Current ≤初始规定值Not more than the specified value12.高温储存：Shelf Life105℃贮存1000小时后，放置16小时后，电容器应满足以下要求After storage for1000hrs at+105℃,then resumed16hours,the capacitors Shall meet the following requirements容量变化率Capacitance Change ±30%初始值内Within±30%of initial value损耗角正切值Dissipation Factor ≤200%初始规定值Not more than200%of the specified value漏电流Leakage Current ≤300%初始规定值Not more than300%of the specified value13.耐焊接热：Resistance to Soldering Heat在250℃的条件下，电容器在热板上保持30秒，然后从热板上取下电容器，让其在室温下恢复，电容器应满足以下要求：The capacitors shall be kept on then hot plate maintained at250℃for30seconds.After removing from the hot plate and restored at room temperature,they meet the following requirement：容量变化率Capacitance Change ±10%初始值内Within±10%of the initial value损耗角正切值Dissipation Factor ≤初始规定值Not more than the specified value漏电流Leakage Current ≤初始规定值Not more than the specified value14.标识：Marking电容器标识内容如下：Capacitors shall be legibly marked with the following:1）产品系列：Manufacture’s mark2）额定电压和额定电容：Rated voltage and nominal capacitanceUT SERIES V-chip Aluminum Electrolytic Capacitors3）负极标识：Negative polarity15.图样：Drawing (Unit:mm)(∅4~∅6.3)(∅8~∅10)(≥∅12.5)U TSERIESV-chip Aluminum Electrolytic CapacitorsPlastic platformPlastic platform16.尺寸：Dimensions (Unit:mm)SizeФ4×5.4Ф5×5.4Ф6.3×5.4Ф6.3×7.7Ф6.3×10.2Ф8×6.5Ф8×10.2Ф8×12.5A 1.8 2.1 2.4 2.4 2.4 2.9 2.9 2.9B 4.3 5.3 6.6 6.6 6.68.38.38.3C 4.3 5.3 6.6 6.6 6.68.38.38.3E 1.0 1.5 2.1 2.1 2.1 3.1 3.1 3.1L 5.45.45.47.710.26.510.212.5H 0.5~0.90.8~1.1Size Ф10×10.2Ф10×12.5Ф12.5×13.5Ф12.5×16.5A 3.2 3.2 4.0 4.0B 10.310.313.013.0C 10.310.313.013.0E 4.5 4.5 4.4 4.4L 10.212.513.516.5H0.8~1.1 1.0~1.417.编带说明：Taping Specifications符合标准JIS C0806与IEC 602863Applicable standard JIS C0806and IEC 60286.(US、UT、UE、UN、UH、UW、UL、UD series)17.1.盒带图样与尺寸Carrier Tape and DimensionFig.1(D≤ 10mm 以下产品)Fig.2(D≥Φ12.5mm 以上产品)UTSERIESV-chip Aluminum Electrolytic Capacitors尺寸SizeW(MM)P(MM)F(MM)A0(MM)B0(MM)T2(MM)S形状ApplicableΦ4*5.4128 5.5 4.5 4.5 5.8--Fig.1Φ5*5.41212 5.5 5.6 5.6 5.8--Φ6.3*5.416127.57.07.0 5.8--Φ6.3*7.716127.57.07.08.2--Φ6.3*10.216127.57.07.010.5--Φ8*6.516127.58.68.67.0--Φ8*10.2241611.58.78.711.0--Φ8*12.5241611.58.78.713.0--Φ10*10.2241611.510.710.711.0--Φ10*12.5241611.510.710.713.0--Φ12.5*13.5322413.714.014.014.228.4Fig.2Φ12.5*16.5322413.714.014.017.528.417.2.卷盘：ReelUTSERIESV-chip Aluminum Electrolytic CapacitorsA32.0∅50 Min.13±0.52317.3.包装数量:Package quantity规格Specification卷装数量Quantity/Reel盒装数量Quantity/BagA±0.3(MM)B±2(MM)Φ4*5.42000pcs20000pcs14382Φ5*5.41000pcs10000pcs14382Φ6.3*5.41000pcs10000pcs18382Φ6.3*7.71000pcs10000pcs18382Φ6.3*10.2700pcs7000pcs18382Φ8*6.51000pcs10000pcs18382Φ8*10.2500pcs5000pcs26382Φ8*12.5400pcs4000pcs26382Φ10*10.2500pcs5000pcs26382Φ10*12.5400pcs4000pcs26382Φ12.5*13.5200pcs1600pcs34382Φ12.5*16.5200pcs1600pcs34382Φ16*16.5125pcs250pcs46332Φ16*21.575pcs150pcs46332Φ18*16.5125pcs250pcs46332Φ18*21.575pcs150pcs46332Φ20*16.5100pcs200pcs46332Φ20*21.550pcs100pcs4633218.无铅回流焊接：Lead-free Reflow Soldering ConditionA.回流焊条件推荐：Recommended Conditions for Reflow Soldering：（1）应采用红外线及热风回流焊接，不宜采用汽相加热回流焊接；A thermal condition system such as infrared radiation(IR)or hot blast should beadopted,and vapor heat transfer systems(VPS)are not recommended.（2）推荐回流焊只进行一次，回流焊次数如果需要二次，必须相隔30分钟以上；Reflow soldering should be performed one time.If the capacitor has to be reflowedtwice,30minutes must be layout between each time.（3）无铅回流焊，请符合下述条件：For lead-free type reflow soldering,please observe proper conditions below: UT SERIES V-chip Aluminum Electrolytic CapacitorsB.表面安装推荐尺寸：Recommended Land Size(Unit:mm)尺寸Size X Y a尺寸SizeX Y aΦ4 1.6 2.6 1.0Φ12.5 3.0 6.0 4.0Φ5 1.6 3.0 1.4Φ16 3.27.0 6.0Φ6.3 1.6 3.5 1.9Φ18 3.28.0 6.0Φ8 2.5 3.5 3.0////Φ10 2.5 4.0 4.0////UT SERIES V-chip Aluminum Electrolytic Capacitors19.引线原材料：The Raw Materials of Lead WireName MaterialPercentage TPCSFe 71.35%Cu 20%Sn8.65%20.电容器代码标志：Explanation of Part Number1234567891011121314Series Voltage (WV)Capacitance ( F)Cap.Tol.(%)Case Size Type/CodeSeries:产品系列Voltage：产品额定工作电压Capacitance：产品标称静电容量Cap.Tol：产品静电容量误差范围Case Size：产品外壳尺寸Type/Code：产品加工形状例如：Example:UT1V221M1010VG产品加工形状Type/Code ：片式产品外壳尺寸Case Size ：10*10.2产品静电容量误差范围Cap.Tol ：±20%产品标称静电容量Capacitance：220μF 产品额定工作电压Voltage：35V 产品系列Series:UT21.结构:ConstructionUTSERIESV-chip Aluminum Electrolytic Capacitors-底座Base plate 铝壳Aluminum case铝箔(阳极和阴极)Aluminum foil (Anode &cathode foil)电解纸Electrolytic paper电解液Electrolytic封口胶粒Rubber seal引出线Lead wire22.额定纹波电流的频率导数：Frequency Coefficient of Allowable Ripple CurrentFrequency 50Hz 120Hz 300Hz 1kHz ≥10kHz Coefficient0.701.001.171.361.5023.电气参数及料号：Electric parameter and Material number电气参数：Electric parameter料号：Material Number 24.片式铝电解电容器一般使用注意事项Application guideline for V-CHIP aluminum electolytic capacitors A)电路设计:Circuit Design1)充分考虑电容器使用和安装条件在产品目录的规定范围内.Please make sure the environmental and mounting conditions to which the capacitor will be exposed are within the conditions specified in catalogue.NOSerie sName (WV /uF)DΦ*LCap.tol.(%)120Hz 20℃DF （％）120Hz 20℃≤LC （uA）（2min）≤E ±0.5Allowable ripple current (mA rms)at 105 C,120HzESR 100KHz (Ω)20℃≤Remarks1UT 220UF35V 10*10.2±201677 5.0230//2UT 100UF80V 10*10.2±201480 5.0175//3UT 33UF100V10*10.2±201433 5.0136/////////////NO Series Name DΦ*L Material number Remarks1UT 220UF35V 10*10.2UT1V221M1010VG /2UT 100UF80V 10*10.2UT1K101M1010VG /3UT 33UF100V10*10.2UT2A330M1010VG///////2)工作温度和施加的纹波电流应在产品目录的规定范围内.Operating temperature and applied ripple shall be within specification.3)在设计电路时，应选择符合寿命要求的产品.Appropriate capacitors which comply with the life requirement of the products should be selected when designing the circuit.4)铝电解电容器是有极性的，不应加反向电压或交流电压。
微芯片（Microchip）产品说明书
Microchip offers a broad portfolio of stand-alone analog and interface solutions that address the thermal management, power management, mixed-signal, linear, interface and safety and security markets.In addition to using low power CMOS technology, Microchip’s analog products are designed to optimize performance while minimizing power consumption.Non-volatile expertise is leveraged to achieve high accuracy specifications without additional manufacturing steps and cost. Chip select/shutdown/sleep features on many of our analog and interface parts enable systems to be selectively shut down to further reduce power consumption.Low operating voltages combined with small form factors such as SC70, DFN and SOT-23 make Microchip’s analog and interface portfolio well-suited for applications with tight power budgets.Typical Applications■Battery powered/Handheld■Consumer■PC Peripherals■Telecommunication■Automotive■IndustrialDesign Tools■CAD/CAE Schematic Symbols and Footprints/cadProduct Selection Tools■Microchip’s Advanced Product Selector/MAPS■Treelink presentation/treelinkStand-Alone Analog and Interface Portfolio Low Power Analog SolutionsPower Management LDO & Switching Regulators Charge PumpDC/DC Converters Power MOSFET DriversPWM Controllers System Supervisors Voltage Detectors Voltage References Li-Ion/Li-Polymer Battery ChargersMixed-SignalA/D ConverterFamiliesDigitalPotentiometersD/A ConvertersV/F and F/VConvertersEnergyMeasurementICsInterfaceCAN PeripheralsInfraredPeripheralsLIN TransceiversSerial PeripheralsEthernet ControllersUSB Peripheral LinearOp AmpsProgrammableGainAmplifiersComparatorsSafety & SecurityPhotoelectricSmoke DetectorsIonization SmokeDetectorsIonization SmokeDetector Front EndsPiezoelectricHorn DriversThermalManagementTemperatureSensorsFan SpeedControllers/Fan FaultDetectorsMotor DriveStepper and DC3Ф BrushlessDC Fan ControllerM i c r o c h i p T e c h n o l o g y I n c o r p o r a t e dInformation subject to change. The Microchip name and logo, the Microchip logo and PIC are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. © 2011 MicrochipTechnology Incorporated. All Rights Reserved. Printed in the U.S.A. 5/11DS22247B *DS22247B*Visit our web site for additional product information and to locate your local sales office.Microchip Technology Inc. • 2355 W. Chandler Blvd. • Chandler, AZ 85224-6199Low Power Analog & Interface Products/analog。
英文原版chip技术中文翻译
一、ChIP实验步骤第一天：（一）、细胞的甲醛交联与超声破碎。
1、取出1平皿细胞（10cm平皿），加入243ul 37％甲醛，使得甲醛的终浓度为1％。
（培养基共有9ml）2、37摄氏度孵育10min。
3、终止交联：加甘氨酸至终浓度为0.125M。
450ul 2.5M甘氨酸于平皿中。
混匀后，在室温下放置5min即可。
4、吸尽培养基，用冰冷的PBS清洗细胞2次。
5、细胞刮刀收集细胞于15ml离心管中（PBS依次为5ml，3ml和3ml）。
预冷后2000rpm 5min收集细胞。
6、倒去上清。
按照细胞量，加入SDS Lysis Buffer。
使得细胞终浓度为每200ul含2×106个细胞。
这样每100ul溶液含1×106个细胞。
再加入蛋白酶抑制剂复合物。
假设MCF7长满板为5×106个细胞。
本次细胞长得约为80％。
即为4×106个细胞。
因此每管加入400ul SDS Lysis Buffer。
将2管混在一起，共800ul。
7、超声破碎：VCX750，25％功率，4.5S冲击，9S间隙。
共14次。
（二）、除杂及抗体哺育。
8、超声破碎结束后，10，000g 4度离心10min。
去除不溶物质。
留取300ul做实验，其余保存于－80度。
300ul中，100ul加抗体做为实验组；100ul不加抗体做为对照组；100ul加入4ul 5M NaCl （NaCl终浓度为0.2M），65度处理3h解交联，跑电泳，检测超声破碎的效果。
9、在100ul的超声破碎产物中，加入900ul ChIP Dilution Buffer和20ul的50×PIC。
再各加入60ul Protein A Agarose/Salmon Sperm DNA。
4度颠转混匀1h。
10、1h后，在4度静置10min沉淀，700rpm离心1min。
11、取上清。
各留取20ul做为input。
一管中加入1ul 抗体，另一管中则不加抗体。