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Silicon Labs Wireless Gecko多协议SoC产品说明书

Silicon Labs Wireless Gecko多协议SoC产品说明书

新闻稿Silicon Labs推出多协议Wireless Gecko SoC简化IoT连接-新型Wireless SoC产品系列提供支持ZigBee®、Thread、Bluetooth® Smart和专有协议的可扩展解决方案-中国,北京-2016年3月1日-Silicon Labs(芯科科技有限公司,NASDAQ:SLAB)日前推出多协议片上系统(SoC)Wireless Gecko产品系列,为物联网(IoT)设备提供灵活的连通性和价格/性能选择。

Silicon Labs新型Wireless Gecko SoC集成了强大的ARM®Cortex®-M4内核、节能的Gecko技术、高达19.5dBm输出功率的2.4GHz无线电、先进的硬件加密技术。

Wireless Gecko SoC提供了用于网状网络的最佳Thread和ZigBee®协议栈、用于专有协议的直观的无线电接口软件、用于点对点连接的Bluetooth®Smart,以及用于简化无线开发、配置、调试和低功耗设计的Simplicity Studio™工具,从而加速无线设计。

获取关于Silicon Labs Wireless Gecko产品系列的价格、供货、开发工具和数据手册等详细信息,请浏览网站:/WirelessGecko。

Wireless Gecko产品包括三个系列的多协议SoC,他们分别针对现实世界中不同IoT使用场景和最普遍的无线协议而优化:∙Blue Gecko系列—Bluetooth Smart连接,具有无与伦比的输出功率和传输距离。

∙Mighty Gecko系列—针对网状网络的最佳ZigBee和Thread连接。

∙Flex Gecko系列—针对各种应用中灵活的专有无线协议选项。

Silicon Labs物联网产品营销副总裁Daniel Cooley表示:“Wireless Gecko产品系列能够通过一站式选择为客户提供不可或缺的多协议IoT连接,并且具有灵活的价格/性能选择,一流的软件协议栈和统一的开发环境,从而极大的简化了无线设计。

Silicon Labs Z-Wave 产品说明书

Silicon Labs Z-Wave 产品说明书

Effective Date:Bulletin Issue Date:5/7/20185/7/2018Description of ChangeSilicon Labs Acquires Sigma Designs Z-Wave Products 180507297 Addendum to PB# 180423283 Acquisition of Sigma Designs Z-Wave ProductsProduct IdentificationZWave Part # Silicon Labs Part #SD3502A-CNE3R SD3502A-CNE3RSD3503A-CNE3R SD3503A-CNE3RZM3102AE-CME1 ZM3102AE-CME1ZM3102AE-CME1R ZM3102AE-CME1RZM3102AH-CME1 ZM3102AH-CME1 ZM3102AU-CME1 ZM3102AU-CME1ZM3102AU-CME1R ZM3102AU-CME1RZM5101A-CME3R ZM5101A-CME3RZM5202AE-CME3R ZM5202AE-CME3RZM5202AH-CME3R ZM5202AH-CME3RZM5202AU-CME3R ZM5202AU-CME3RZM5304AE-CME3R ZM5304AE-CME3RReason for ChangeThis Addendum is being issued to PB#180423283 to include Z-Wave top marking format changes for SD3502A-CNE3R, SD3503A-CNE3R, ZM5101A-CME3R and ZW0301A-CNE1 to Silicon Labs' format. Please refer to Appendix for details. On Apr 18, 2018, Silicon Labs completed the transaction to acquire Sigma Designs Z-Wave. The integration of Z-Wave products into Silicon Labs will result in a few relatively minor changes as described below:1. Existing customer purchase orders shipped beginning on April 23, 2018 will be fulfilled and shipped by the samemanufacturer, with additional ship-from locations, but done so through the Silicon Labs ERP system.Addition ship-from locations:Silicon Laboratories International Pte. Ltd.18 Tai Seng Street #05-01,18 Tai Seng, Singapore 539775Advanced Semiconductor Engineering ChungLi (ASECL)No. 550, Section 1, Zhonghua Road, Zhongli District,Taoyuan City, Taiwan 3202. The Z-Wave labels will transition as inventory is depleted to standard Silicon Labs labels.3. All boxes, reels, trays, and moisture barrier bags will transition to Silicon Labs standard materials as inventory is depleted.4. The commercial invoice (pro forma) and packing list will change to the Silicon Labs standard format starting April 23, 2018.5. The Z-Wave product top marking for SD3502A-CNE3R, SD3503A-CNE3R, ZM5101A-CME3R and ZW0301A-CNE1 will transition as inventory is depleted to standard Silicon Labs top marking format. The rest remains unchanged.Z-Wave ordering part numbers [OPN] will remain the same after the transition.This change is considered a minor change which does not affect form, fit, function, quality, or reliability. The information is being provided as a customer courtesy.Please contact your local Silicon Labs sales representative with any questions about this notification. A list of Silicon Labs sales representatives may be found at .Customer Actions Needed:If the customer performs an incoming inspection that includes analysis of product top marking, labels and/or shipping documents, then those inspection instructions should be updated.User RegistrationRegister today to create your account on . Your personalized profile allows you to receive technical document updates, new product announcements, “how-to” and design documents, product change notices (PCN) and other valuable content available only to registered users. /profilea) Silicon Labs Inner Box label (HU) – Will be placed on Reel, Moisture Barrier Bag, Inner Boxb) Silicon Labs Outer Box label - will be placed on Outer Boxc) Silicon Labs Outer Box label - will be placed on Outer Boxd) Silicon Labs Commercial Invoicee) Silicon Labs Packing Listf) Marking change - SD3502A-CNE3Rg) Marking change - SD3503A-CNE3Rh) Marking change - ZM5101A-CME3Ri) Marking change - ZW0301A-CNE1Silicon Laboratories Inc.400 West Cesar ChavezAustin, TX 78701 DisclaimerSilicon Labs intends to provide customers with the latest, accurate, and in-depth documentation of all peripherals and modules available for system and software implementers using or intending to use the Silicon Labs products. Characterization data, available modules andperipherals, memory sizes and memory addresses refer to each specific device, and "Typical" parameters provided can and do vary in different applications. Application examples described herein are for illustrative purposes only. Silicon Labs reserves the right to make changes without further notice and limitation to product information, specifications, and descriptions herein, and does not give warranties as to the accuracy or completeness of the included information. Silicon Labs shall have no liability for the consequences of use of the information supplied herein. This document does not imply or express copyright licenses granted hereunder to design or fabricate any integrated circuits. The products are not designed or authorized to be used within any Life Support System without the specific written consent of Silicon Labs. A "Life Support System" is any product or system intended to support or sustain life and/or health, which, if it fails, can be reasonably expected to result in significant personal injury or death. Silicon Labs products are not designed or authorized for military applications. Silicon Labs products shall under no circumstances be used in weapons of mass destruction including (but not limited to) nuclear, biological or chemical weapons, or missiles capable of delivering such weapons.Trademark InformationSilicon Laboratories Inc.® , Silicon Laboratories®, Silicon Labs®, SiLabs® and the Silicon Labs logo®, Bluegiga®, Bluegiga Logo®,Clockbuilder®, CMEMS®, DSPLL®, EFM®, EFM32®, EFR, Ember®, Energy Micro, Energy Micro logo and combinations thereof, "the world’s most energy friendly microcontrollers", Ember®, EZLink®, EZRadio®, EZRadioPRO®, Gecko®, ISOmodem®, Micrium, Precision32®, ProSLIC®, Simplicity Studio®, SiPHY®, Telegesis, the Telegesis Logo®, USBXpress®, Zentri and others are trademarks or registered trademarks of Silicon Labs. ARM, CORTEX, Cortex-M3 and THUMB are trademarks or registered trademarks of ARM Holdings. Keil is aregistered trademark of ARM Limited. All other products or brand names mentioned herein are trademarks of their respective holders.。

芯片公司Silicon Labs的应用说明书:EFR32系列1子GHz RF匹配的集成无动态设备

芯片公司Silicon Labs的应用说明书:EFR32系列1子GHz RF匹配的集成无动态设备

AN1081: Integrated Passive Devices for EFR32 Series 1 Sub-GHz RF MatchingThe external RF matching network for EFR32 Series 1 devices supporting sub-GHzband operation may be further simplified by integrating all components in a single, Inte-grated Passive Device (IPD). This application note covers the various aspects of utiliz-ing an IPD in an EFR32 Series 1 design.EFR32 Series 1 devices supporting sub-GHz frequency bands utilize an external matching network. This network serves several purposes, including impedance trans-formation from a 50 Ω antenna to the optimum transmit and receive path impedances for EFR32, single-ended to differential conversion, and lowpass filtering to minimize transmit harmonics and receive out-of-band interference. This network is often imple-mented by discrete components. Some applications, however, benefit in terms of mini-mized space, bill of materials, and complexity by integrating all in a single ceramic de-vice, the IPD.Readers interested in a detailed description of the discrete sub-GHz matching network should refer to AN923: EFR32 sub-GHz Matching Guide.Performance data for the individual EFR32 Series 1 IPDs are provided in the following application notes:•AN1146: Johanson 434 MHz IPDs for EFR32 Series 1 Wireless SOCs•AN1147: Murata 434 MHz IPDs for EFR32 Series 1 Wireless SOCs•AN1148: Johanson 868 MHz IPDs for EFR32 Series 1 Wireless SOCs•AN1149: Murata 868 MHz IPDs for EFR32 Series 1 Wireless SOCs KEY POINTS•Integrated Passive Devices (IPDs) simplify the EFR32 Series 1 sub-GHz RF matching network design, reducing complexity and PCB board space by 70%•IPDs are available from leading RF ceramics providers supporting commonsub-GHz bands•Including IPDs in EFR32 Series 1 designsis made straightforward with a few hardware and software design considerationsRev. 0.2Supported Devices and Bands 1. Supported Devices and BandsIPDs are available from leading RF ceramics providers for common bands. As with the discrete EFR32 Series 1 matching networks, IPDs are optimized for a specific frequency, target output power, and supply voltage. Available designs are listed in the following table.Table 1.1. IPD Devices for EFR32 Series 1Note: Measurements on sample boards showed that the 868 MHz Murata and Johanson IPDs can be used at 3.3 V VDDPA supply voltage: ~ 18-19 dBm output power can be achieved with acceptable TX current and harmonic performance. However, note that exten-sive characterization of the 868 MHz Murata and Johanson IPDs were performed only for max. +14 dBm transmit power when the PA is powered from 1.8 V. | Building a more connected world.Rev. 0.2 | 22. ImplementationIncorporation of an IPD in an EFR32 Series 1 design is straightforward with a few additional considerations in PCB and firmware de-signs.2.1 PCB DesignPCB design is straightforward with focus on minimizing trace lengths and parasitic reactances.Key considerations include:•Grounding of IPD ground pins: All should have a clear / straightforward return path to the main RF ground, typically on the PCB plane below the IPD and RFIC.•Antenna Connection: Provides a 50 Ω controlled impedance connection from IPD ANT port to antenna. This net should include a 56 pF ac coupling capacitor C COUPLE as some IPD designs' antenna ports are dc-coupled.•DC Bypass Capacitor, C BYPASS: 56 pFThe reference RF section schematic and layout and recommended PCB land pattern are shown in the figures below.Refer to AN928.1: EFR32 Series 1 Layout Design Guide for additional EFR32 Series 1 PCB design guidance.Figure 2.1. RF Section Reference Schematic| Building a more connected world.Rev. 0.2 | 3Figure 2.2. RF Section Reference LayoutNote: Darker colors denote pads. Lighter colors denote recommended ground fill beneath the device. Pads 0.3 mm x 0.5 mm, 10 pla-ces.Rev. 0.2 | 42.2 Firmware/SoftwareAs with the discrete design, there are a few firmware configuration items to consider when using the IPD, including:•PA initialization: Includes VDDPA source, etc.•PA dBm curve optimization: The dBm-based API input refers back to a curvefit to determine the correct PA device settings. This curve is slightly different for each match and should be optimized. As well, the offset value may be different for different RF front ends.•PA tuning (sgpactune value): This is an internal tuning value, optimized for each matching network, supply voltage, and frequency.Optimal values have been determined by Silicon Labs and the IPD manufacturer and are listed in Table 1.1 IPD Devices for EFR32 Series 1 on page 2.Refer to the RAIL API programming literature for details on the API calls required to implement these items.Simplicity StudioOne-click access to MCU and wireless tools, documentation, software, source code libraries & more. Available for Windows, Mac and Linux!IoT Portfolio /IoTSW/HW/simplicityQuality /qualitySupport and CommunitySilicon Laboratories Inc.400 West Cesar Chavez Austin, TX 78701USADisclaimerSilicon Labs intends to provide customers with the latest, accurate, and in-depth documentation of all peripherals and modules available for system and software implementers using or intending to use the Silicon Labs products. Characterization data, available modules and peripherals, memory sizes and memory addresses refer to each specific device, and "Typical" parameters provided can and do vary in different applications. Application examples described herein are for illustrative purposes only. Silicon Labs reserves the right to make changes without further notice to the product information, specifications, and descriptions herein, and does not give warranties as to the accuracy or completeness of the included information. Without prior notification, Silicon Labs may update product firmware during the manufacturing process for security or reliability reasons. Such changes will not alter the specifications or the performance of the product. Silicon Labs shall have no liability for the consequences of use of the information supplied in this document. This document does not imply or expressly grant any license to design or fabricate any integrated circuits. The products are not designed or authorized to be used within any FDA Class III devices, applications for which FDA premarket approval is required, or Life Support Systems without the specific written consent of Silicon Labs. A "Life Support System" is any product or system intended to support or sustain life and/or health, which, if it fails, can be reasonably expected to result in significant personal injury or death. Silicon Labs products are not designed or authorized for military applications. Silicon Labs products shall under no circumstances be used in weapons of mass destruction including (but not limited to) nuclear, biological or chemical weapons, or missiles capable of delivering such weapons. Silicon Labs disclaims all express and implied warranties and shall not be responsible or liable for any injuries or damages related to use of a Silicon Labs product in such unauthorized applications.Trademark InformationSilicon Laboratories Inc.®, Silicon Laboratories®, Silicon Labs®, SiLabs® and the Silicon Labs logo®, Bluegiga®, Bluegiga Logo®, ClockBuilder®, CMEMS®, DSPLL®, EFM®, EFM32®, EFR, Ember®, Energy Micro, Energy Micro logo and combinations thereof, "the world’s most energy friendly microcontrollers", Ember®, EZLink®, EZRadio®, EZRadioPRO®, Gecko®, Gecko OS, Gecko OS Studio, ISOmodem®, Precision32®, ProSLIC®, Simplicity Studio®, SiPHY®, Telegesis, the Telegesis Logo®, USBXpress® , Zentri, the Zentri logo and Zentri DMS, Z-Wave®, and others are trademarks or registered trademarks of Silicon Labs. ARM, CORTEX, Cortex-M3 and THUMB are trademarks or registered trademarks of ARM Holdings. Keil is a registered trademark of ARM Limited. Wi-Fi is a registered trademark of the Wi-Fi Alliance. All other products or brand names mentioned herein are trademarks of their respective holders.。

Silicon Labs 产品说明书:Series-1、Series-2、BG12、BG22、FG2

Silicon Labs 产品说明书:Series-1、Series-2、BG12、BG22、FG2

Information on Sustainable Products June 2022Silicon Labs Product AreaSeries-1Series-2BG12BG22FG23 | ZG23MG24 Die Size (mm2)18.90 5.407.029.29 We are a leader in secure, intelligent wireless technology for a more connected world. Our integrated hardware and software platform, intuitive development tools, unmatched ecosystem and robust support make us the ideal long-term partner in building advanced industrial, commercial, home and life applications.We make it easy for developers to solve complex wireless challenges throughout the product lifecycle and get to market quickly with innovative solutions that transform industries, grow economies and improve lives.Our Mission: To empower developers to create wirelessly connected devices that transform industries, groweconomies and improve lives.Silicon Labs constantly innovate to improve our products and services for energy efficiency and productivity. Our products are reduced in die size to improve production yields, further reduce the energy consumption footprint, and optimizing manufacturing processes for source reductions.Silicon Labs Product Energy EfficiencySeries-1Series-2Operating ModeBG12BG22FG23 | ZG23MG24RS9116TX | Transmit8.5 mA @ 0 dBm 4.1 mA @ 0dBm25 mA @ 14dBm 5 mA @ 0dBm130 mA @ 8dBm RX | Receive10 mA 3.6 mA 4.0 mA 4.4 mA20 mA EM0 | Active130 µA/MHz22 µA/MHz26 μA/MHz31 µA/MHz55 µA (1 sec) EM2 | Deep Sleep 2.9 µA 1.2μA 1.2μA 1.3 µA0.9 µA EM2 | Wake up 3.2 µs 5.1 µs 5.1 µs 5.1 µs 2.5msProduct Example ESL removes usage of paper from pricing labels in retail. BG22 enables ESL to operate +7 years on a coin cell batteryProduct ExampleEnergy providers integratewireless in metering toe.g., balance the load ofthe grid and inform energyusers with insights to bettermanage its energy footprintProduct ExampleSmart light bulbs enablesresidents and commercialbuildings to automate andmanage lighting fromremote to reduce energyconsumptions.Product ExampleRecovR enables efficientfleet management withreal-time location ofvehicles in preparation fortransactions, reducing thecarbon footprint for greenbusiness environmentSilicon Labs Series-2 enables developers to create low power IoT devicesEnvironmental Friendly / Recycled Materials §Silicon Labs suppliers declares “MaterialDeclaration of Conformance Instructions” incompliance with Substance Management andReporting (SR2001) in accordance with thefollowing standards, directives and regulations:•Directive 2006/122/EC | EU PFOS/PFOA•IEC 61249-2-21 | IEC definition of Halogen Free•JIG-101 | Joint Industry Guide MaterialComposition Declaration for Electronic Products•Regulation(EC) No1907/2006 | EU REACH(including REACH annex xvii substances)•RMI Conflict Minerals Reporting Templat|/ConflictMineralsReportingTemplateDashboard.htm§Carrier tape, moisture barrier bag & carton boxare RoHS compliant§Silicon Labs and its suppliers use recyclablecarton boxes for shipment our products。

Silicon Labs EZR32HG320F64R55G 无线微控器系列参考手册说明书

Silicon Labs EZR32HG320F64R55G 无线微控器系列参考手册说明书

Reference Manual BRD4542BThe EZR32HG family of Wireless MCUs deliver a high perform-ance, low energy wireless solution integrated into a small form factor package.By combining a high performance sub-GHz RF transceiver with an energy efficient 32-bit MCU, the family provides designers the ultimate in flexibility with a family of pin-compatible devices that scale from 32/64 kB of flash and support Silicon Labs EZRadio or EZRadioPRO transceivers. The ultra-low power operating modes and fast wake-up times of the Silicon Labs energy friendly 32-bit MCUs, combined with the low transmit and receive power consumption of the sub-GHz radio, result in a solution optimized for battery powered applications.To develop and/or evaluate the EZR32 Happy Gecko the EZR32HG Radio Board can be connected to the Wireless Starter Kit Mainboard to get access to display, buttonsand additional features from Expansion Boards.Rev. 1.0Introduction 1. IntroductionThe EZR32 Happy Gecko Radio Boards provide a development platform (together with the Wireless Starter Kit Mainboard) for the Silicon Labs EZR32 Happy Gecko Wireless Microcontrollers and serve as reference designs for the matching network of the RF inter-face.The BRD4542B is designed to the operate in the European ETSI 433.05-434.79 MHz band, the RF matching network is optimized to operate in the 434 MHz band with 10 dBm output power.To develop and/or evaluate the EZR32 Happy Gecko the BRD4542B Radio Board can be connected to the Wireless Starter Kit Main-board to get access to display, buttons and additional features from Expansion Boards and also to evaluate the performance of the RF interface.2. Radio Board Connector Pin AssociationsThe figure below shows the pin mapping on the connector to the radio pins and their function on the Wireless Starter Kit Mainboard.GND F9 / NC3v3NC / P36P200Upper RowNC / P38NC / P40NC / P42NC / P44DEBUG.TMS_SWDIO / PF1 / F0DISP_ENABLE / PA1 / F14UIF_BUTTON0 / PC9 / F12UIF_LED0 / PF4 / F10NC / F8DEBUG.RESET / RESETn / F4NC / F2DISP_MOSI / PE10 / F16VCOM.TX_MOSI / PD4 / F6PTI.DATA / RF_GPIO0 / F20DISP_EXTCOMIN / PF3 / F18USB_VBUS5VBoard ID SCLGNDBoard ID SDAUSB_VREGF7 / PD5 / VCOM.RX_MISOF5 / PC8 / VCOM_ENABLEF3 / NCF1 / PF0 / DEBUG.TCK_SWCLKP45 / NCP43 / NCP41 / NCP39 / NCP37 / NCF11 / PF2 / UIF_LED1F13 / PC10 / UIF_BUTTON1F15 / PE12 / DISP_SCLKF17 / PA0 / DISP_SCSF19 / RF_GPIO1 / PTI.SYNCF21 / NCGNDVMCU_INUIF_LED1 / PF2 / P0P201Lower RowUIF_LED0 / PF4 / P2UIF_BUTTON0 / PC9 / P4UIF_BUTTON1 / PC10 / P6GND VRF_INP35 / P7 / PE13P5 / PE12 / DISP_SCLK P3 / PE11P1 / PE10 / DISP_MOSI P33 / RF_GPIO3 P31 / RF_GPIO1 / PTI.SYNC P29 / NCP27 / NC P25 / PC14 * P23 / NC P21 / PF1 / DEBUG.TMS_SWDIO P19 / PC8 / VCOM_ENABLEP17 / NCP15 / PA1 / DISP_ENABLE P13 / PD6P11 / PD5 / VCOM.RX_MISO P9 / PD4 / VOM.TX_MOSI NC / P34RF_GPIO2 / P32PTI.DATA / RF_GPIO0 / P30NC / P28PC15 * / P26NC / P24DISP_EXTCOMIN / PF3 / P22DEBUG.TCK_SWCLK / PF0 / P20NC / P18NC / P16DISP_SCS / PA0 / P14PD7 / P12NC / P10PB11 / P8 * Connection is not enabled by default on the Radio Board.To enable 0 Ohm resistors should be mounted. See the schematic of the Radio Board.Figure 2.1. BRD4542B Radio Board Connector Pin MappingRadio Board Connector Pin Associations3. Radio Board Block DescriptionThe block diagram of the EZR32HG Radio Board is shown in the figure below. For the exact part numbers of the applied components refer to the BRD4542B BOM.Figure 3.1. EZR32HG Radio Board Block Diagram3.1 Wireless MCUThe BRD4542B EZR32 Happy Gecko Radio Board incorporates an EZR32HG320F64R55G Wireless Microcontroller featuring 32-bit Cortex-M0+ core, 64 kB of flash memory and 8 kB of RAM. For additional information on the EZR32HG320F64R55G, refer to the EZR32HG320 Data Sheet.The EZR32HG320F64R55G is built using the Si4455, a high-performance, low-current transciever that is part of Silicon Labs' EZRadio family. The Si4455 contains a +13 dBm power amplifier that is capable of transmitting from –40 to +13 dBm. For a complete feature set and in-depth information on the transciever, refer to the "Si4455 Easy-to-Use, Low-Current OOK/(G)FSK Sub-GHz Transceiver" Data Sheet.3.2 USBThe BRD4542B Radio Board incorporates a micro USB connector. The 3.3V USB regulator output is are routed back to the WSTK through the Radio Board Connector so the Radio Board can supply power to the Wireless Starter Kit Mainboard.For additional information on EZR32HG USB, refer to the EZR32HG320 Data Sheet.3.3 RF Crystal Oscillator (RFXO)The BRD4542B Radio Board has a 30 MHz crystal mounted. For more details on crystal or TCXO selection for the RF part of the EZR32 devices refer to "AN785: Crystal Selection Guide for the Si4x6x RF ICs".3.4 LF Crystal Oscillator (LFXO)The BRD4542B Radio Board has a 32.768 kHz crystal mounted. For safe startup two capacitors are also connected to the LFXTAL_N and LFXTAL_H pins. For details regarding the crystal configuration, the reader is referred to Application Note "AN0016: EFM32 Oscilla-tor Design Consideration".| Smart. Connected. Energy-friendly.Rev. 1.0 | 33.5 HF Crystal Oscillator (HFXO)The BRD4542B Radio Board has a 24 MHz crystal mounted. For safe startup two capacitors are also connected to the HFXTAL_N and HFXTAL_H pins. For details regarding the crystal configuration, the reader is referred to Application Note "AN0016: EFM32 Oscillator Design Consideration".3.6 RF Matching NetworkThe BRD4542B Radio Board includes a Class E type matching network with a so-called Direct Tie matching configuration where the TX and RX sides are connected together without an additional RF switch, to be able to use one antenna both for transmitting and receive-ing. The component values were optimized for the 434 MHz band RF performace and current consumption with 10 dBm output power. For more details on the matching network used on the BRD4542B see Chapter 4.1 Matching Network.3.7 SMA ConnectorTo be able to perform conducted measurements or mount external antenna for radiated measurements, range tests etc., Silicon Labs added an SMA connector to the Radio Board. The connector allows an external 50 Ohm cable or antenna to be connected during de-sign verification or testing.3.8 Radio Board ConnectorsTwo dual-row, 0.05” pitch polarized connectors make up the EZR32HG Radio Board interface to the Wireless Starter Kit Mainboard. For more information on the pin mapping between the EZR32HG320F64R55G and the Radio Board Connector refer to Chapter 2. Radio Board Connector Pin Associations.4. RF SectionThe BRD4542B Radio Board includes a Class E type TX matching network with the targeted output power of 10 dBm at 434 MHz.The main advantage of the Class E matching types is their very high efficiency. They are proposed for applications where the current consumption is most critical, e.g., the typical total EZRadio chip current with Class E type matching is ~18 mA at ~10 dBm (using the 13dBm PA output and assuming 3.3 V supply voltage).The main disadvantage of the Class E type matches is the high supply voltage dependency (the power variation is proportional to the square of the supply voltage change: i.e. the decrease in power can be ~6 dB in the 1.8–3.8 V range) and the inaccurate nonlinear power steps. Also their current consumption and the peak voltage on the TX pin are sensitive to the termination impedance variation, and they usually require slightly higher order filtering and thus higher bill of materials cost.The matching network is constructed with a so-called Direct Tie configuration where the TX and RX sides are connected together with-out an additional RF switch, to be able to use one antenna both for transmitting and receiveing. Careful design procedure was followed to ensure that the RX input circuitry does not load down the TX output path while in TX mode and that the TX output circuitry does not degrade receive performance while in RX mode.For detailed explanation of the Class E type TX matching and the Direct Tie configuration matching procedure the reader is referred to "AN693: Si4455 Low-Power PA Matching". For detailed description of the RX matching the reader is referred to "AN643: Si446x/Si4362 RX LNA Matching".4.1 Matching NetworkThe matching network structure used on the BRD4542B Radio Board is shown in the figure below.Figure 4.1. RF Section of the Schematic of the BRD4542B EZR32 Happy Gecko Radio BoardThe component values were optimized for the 434 MHz band RF performace and current consumption with 10 dBm output power. The resulting component values with part numbers are listed in the table below.Rev. 1.0 | 5Table 4.1. Bill of Materials for the BRD4542B RF Matching NetworkThe Application Note "AN693: Si4455 Low-Power PA Matching" contains component values for reference matching networks which were developed for the EZRadioPRO Pico Boards. For the WSTK radio boards some fine-tuning of the component values may be nec-essary due to different parasitic effects (bonding wire, layout etc.). For optimized RF performance the component values listed in the table above may differ from the ones listed in the referred Application Note.For the reader’s specific application and board layout the adjustment of the final matching values might be necessary. The above com-ponent values should be used as starting points and the values modified slightly to zero-in on the best filter response and impedance match to 50 ohm. To minimize the differences due to different layout parasitics Silicon Labs recommends copying the layout of the RF section of the radio board as is. If that is not possible, refer to "AN685: Layout Design Guide for the Si4455/435x RF ICs" for layout design recommendations. | Smart. Connected. Energy-friendly.Rev. 1.0 | 65. Mechanical DetailsThe BRD4542B EZR32 Happy Gecko Radio Board is illustrated in the figures below.2.7 mmFigure 5.1. BRD4542B Top View5 mm ConnectorConnector Figure 5.2. BRD4542B Bottom ViewMechanical DetailsRev. 1.0 | 7EMC Compliance 6. EMC ComplianceThe BRD4542B EZR32 Happy Gecko Radio Board is dedicated for operation in the European ETSI 434.050-434.790 MHz band for non-specific use. The relevant ETSI EN 300-220-1 regulation specifies the maximum allowed level of the fundamental power and spuri-ous emissions.In this document the compliance of the Radio Board fundamental power and harmonic emissions with the regulation limits will be inves-tigated at 434MHz (up to the frequency of the 10th harmonic).6.1 ETSI EN 300-200-1 Emission Limits for the 433.050-434.790 MHz BandBased on ETSI EN 300-220-1 the allowed maximum fundamental power for the 433.050-434.790 MHz band is 10 mW (+10 dBm) e.r.p. both for conducted and radiated measurements.Note: Further in this document EIRP (Effective Isotropic Radiated Power) will be used instead of e.r.p. (Effective Radiated Power) for the comparison of the limits and measurement results. The 10 mW e.r.p radiated limit is equivalent to +12.1 dBm EIRP.For the unwanted emission limits see the table below.7. RF Performance7.1 Measurement setupThe BRD4542B EZR32 Happy Gecko Radio Board was attached to a Wireless Starter Kit Mainboard (BRD4001 (Rev. A02) ) and its transceiver was operated in continuous carrier transmission mode. The output power of the radio was set to 10 dBm (PA_PWR_LVL =0x1F, PA_BIAS_CLKDUTY = 0xC0 at VRF=3.3 V).7.2 Conducted Power MeasurementsIn case of the conducted measurements the output power was measured by connecting the EZR32HG Radio Board directly to a Spec-trum Analyzer (P/N: MS2692A) through its on-board SMA connector. At 10 dBm output power and 3.3 V supply voltage the measured typical current consumption of the RF section of the board is 18 mA.A typical output spectrum is shown in the figure below.Figure 7.1. Typical Output Spectrum of the BRD4542B Radio BoardRF Performance| Smart. Connected. Energy-friendly.Rev. 1.0 | 9As it can be observed the only unwanted emission above -60 dBm is the double-frequency harmonic but its -39.39 dBm power is com-pliant with the -27.8 dBm limit with large margin.Note: In practice comercially available whip antennas usually have ~0-2 dB gain at the fundamental and < 0 dB gain at the harmonic frequencies so if the conducted levels are compliant with the emission limits with small margin it is likely that the margin on the harmon-ics radiated by an external whip antenna will be higher. Unfortunately in most cases, the PCB radiation (from traces or and/or compo-nents) is stronger so using shielding, applying larger duty cycle correction (if allowed) or reduction of the fundamental power could be necessary.7.3 Radiated Power MeasurementsFor radiated measurements an external whip antenna (P/N: ANT-433-CW-QW-SMA) was used. The power supply for the board were two AA batteries (3 V). The batteries were connected to the Wireless Starter Kit Mainboard through its External Power Supply connec-tor with minimal wire length to minimize the wire radiation.The DUT was rotated in 360 degree with horizontal and vertical reference antenna polarizations in the XY, XZ and YZ cuts. The meas-urement axes are as shown in the figure below.Figure 7.2. DUT: Radio Board with Wireless Starter Kit Mainboard (Illustration)The measured radiated powers are shown in the table below.Table 7.1. Maximums of the Measured Radiated Powers of the BRD4542BAs it can be observed the fundamental and all of the harmonics comply with the ETSI EN 300-220-1 limits with large margin.One may notice that the radiated harmonic levels, in general, are higher compared to the levels expected based on the conducted measurement. Investigations showed that this increase is due to the PCB radiations (components and PCB traces).Note: The radiated measurement results presented in this document were recorded in an unlicensed antenna chamber. Also the radi-ated power levels may change depending on the actual application (PCB size, used antenna etc.) therefore the absolute levels and margins of the final application is recommended to be verified in a licensed EMC testhouse!EMC Compliance Recommendations 8. EMC Compliance Recommendations8.1 Recommendations for ETSI ComplianceAs it was shown in the previous chapters the BRD4542B EZR32 Happy Gecko Radio Board is compliant with the harmonic emission limits of the ETSI EN 300-220-1 regulation in the 434.050-434.790 MHz band with 10 dBm output power. Although the BRD4542B Radio Board has an option for mounting a shielding can, that is not required for the compliance. Due to the conducted fundamental is marginally exceeding the limit slight output power reduction could be necessary for the radiated compliance.Document Revision History 9. Document Revision HistoryTable 9.1. Document Revision HistoryBoard Revisions 10. Board RevisionsTable 10.1. BRD4542B Radio Board RevisionsTable of Contents1. Introduction (1)2. Radio Board Connector Pin Associations (2)3. Radio Board Block Description (3)3.1 Wireless MCU (3)3.2 USB (3)3.3 RF Crystal Oscillator (RFXO) (3)3.4 LF Crystal Oscillator (LFXO) (3)3.5 HF Crystal Oscillator (HFXO) (4)3.6 RF Matching Network (4)3.7 SMA Connector (4)3.8 Radio Board Connectors (4)4. RF Section (5)4.1 Matching Network (5)5. Mechanical Details (7)6. EMC Compliance (8)6.1 ETSI EN 300-200-1 Emission Limits for the 433.050-434.790 MHz Band (8)7. RF Performance (9)7.1 Measurement setup (9)7.2 Conducted Power Measurements (9)7.3 Radiated Power Measurements (11)8. EMC Compliance Recommendations (13)8.1 Recommendations for ETSI Compliance (13)9. Document Revision History (14)10. Board Revisions (15)Table of Contents (16)DisclaimerSilicon Laboratories intends to provide customers with the latest, accurate, and in-depth documentation of all peripherals and modules available for system and software implementers using or intending to use the Silicon Laboratories products. Characterization data, available modules and peripherals, memory sizes and memory addresses refer to each specific device, and "Typical" parameters provided can and do vary in different applications. Application examples described herein are for illustrative purposes only. Silicon Laboratories reserves the right to make changes without further notice and limitation to product information, specifications, and descriptions herein, and does not give warranties as to the accuracy or completeness of the included information. Silicon Laboratories shall have no liability for the consequences of use of the information supplied herein. This document does not imply or express copyright licenses granted hereunder to design or fabricate any integrated circuits. The products must not be used within any Life Support System without the specific written consent of Silicon Laboratories. A "Life Support System" is any product or system intended to support or sustain life and/or health, which, if it fails, can be reasonably expected to result in significant personal injury or death. Silicon Laboratories products are generally not intended for military applications. Silicon Laboratories products shall under no circumstances be used in weapons of mass destruction including (but not limited to) nuclear, biological or chemical weapons, or missiles capable of delivering such weapons.Trademark InformationSilicon Laboratories Inc., Silicon Laboratories, Silicon Labs, SiLabs and the Silicon Labs logo, CMEMS®, EFM, EFM32, EFR, Energy Micro, Energy Micro logo and combinations thereof, "the world’s most energy friendly microcontrollers", Ember®, EZLink®, EZMac®, EZRadio®, EZRadioPRO®, DSPLL®, ISOmodem ®, Precision32®, ProSLIC®, SiPHY®, USBXpress® and others are trademarks or registered trademarks of Silicon Laboratories Inc. ARM, CORTEX, Cortex-M3 and THUMB are trademarks or registered trademarks of ARM Holdings. Keil is a registered trademark of ARM Limited. All other products or brand names mentioned herein are trademarks of their respective holders.Silicon Laboratories Inc.400 West Cesar Chavez Austin, TX 78701USASimp li city StudioOne-click access to MCU tools, documentation, software, source code libraries & more. Available for Windows, Mac and Linux!/simplicityMCU Portfolio /mcuSW/HW/simplicityQuality /qualitySupport and Community。

Silicon Labs 自动化系统隔离产品说明书

Silicon Labs 自动化系统隔离产品说明书

How to Solve EMI Problems in Isolated Automotive SystemsBy Charlie Ice, Senior Product Manager, Isolation, Silicon LabsIntroductionElectromagnetic compatibility (EMC) has long been a challenge for engineers, and as electric vehicle (EV) and hybrid electric vehicle (HEV) systems continue to gain momentum, this continues to be a major concern. Traditional internal combustion engine (ICE) vehicles are largely mechanicalin nature, with electronics bolted to the mechanical power plant. EVs and HEVs, however, are very different. Electrical power is converted into mechanical motion using high-voltage batteries, motors, and chargers. With great power comes great responsibility... to limit the electromagnetic interference (EMI) that comes with power electronics! The isolation used to bridge the low voltage and high voltage domains also introducesnew EMI concerns. Many modern EVs and HEVs use digital isolators, which bring unprecedented levels of sophistication and capability to isolation devices and are designed to minimize EMI. However, they are still a digital device that can cause EMI issues. Fortunately, there are several tried and true techniques for reducing EMI in an isolated system, and three of the most effective don’t add any additional cost.Before tackling EMI improvements, or the EMI standards for vehicles, the basics of electromagnetic compatibility (EMC) and EMI must be understood. EMC refers to both the immunity and emissions of a device, while EMI focuses only on the emissions of a device. CISPR 25, the most common EMC standard used for vehicles, specifies both EMI and immunity requirements. A device’s ability to operate correctly despite the presence of interference is known as immunity. Designers generally place and emphasis on reducing the EMI of a device because it tends to improve its immunity to outside interference.EMI is divided into conducted and radiated emission limits within CISPR 25, and the difference between the two is fairlyintuitive. Conducted EMI travels between devices through the power, signaling, or other connected cables. This is in contrast to radiated EMI, which travels through electromagnetic fields in order to interfere other devices. Radiated EMI, on the other hand, travels through electromagnetic fields to interfere with the other device. Radios illustrate this concept well because the radio transmitter is emitting specific frequencies of radiated EMI that the receiver is tuned to pick up. The same holds true for unwanted radiated EMI - the offending device transmits an unwanted electromagnetic field, which the other device unintentionally receives and amplifies. Unlike a radio, this received signal results in the device operating unintentionally. EMC standards for EMI ensure the conducted and radiated emissions are below a specified threshold under specific test conditions. By passing the EMI tests outlined in CISPR 25, a device is unlikely to interfere with another device in the vehicle.Differential-mode and common-mode currents are an important part of any discussion about EMI. As common-mode currents often cause EMI, the vast majority of circuits operate by using differential-mode current. Figure 1 shows a single-endedsignaling scheme using differential-mode current, where current is sent on one conductor and then returned through the ground connection. Another differential-mode signaling method is to use balanced differential signaling, where a dedicated conductor is added for the return current, as shown in Figure 2. In both methods, the current in the two conductors is the same leaving a net zero current. Unfortunately, many times the return current finds an alternative, often longer, path back to the source resulting in a common-mode current. This common-mode current creates an imbalance in the two conductors which causes radiated emissions. Figures 3 and 4 show common-mode currents for both single ended and differential-mode systems. Fortunately, many common-mode currents can be reduced with a few design improvements. Before exploring these methods, however, the additional challenges brought about by isolation must be discussed.Immunity, Emissions, and CurrentsFigure 1 - Single-ended differential-mode current.Load (RX)VS VLi sourceV diffi returnSource (TX)Figure 2 - Balanced differential-mode current.Load (RX)VS VLi sourceV diffi returnSource (TX)Figure 3 - Common-mode current in a single ended system.VS VLFigure 4 - Common-mode current in a differential signaling system.VS VLcmIsolation, and digital isolation in particular, is one of the fundamental technologies enabling the electric vehicle revolution. The isolation device allows communication and signaling across the high impedance barrier between the high voltage and low voltage domains. Figure 5 shows a basic isolation diagram. Among many other use cases and benefits, the isolation barrier allows the low voltage electronics, often the controller, to be separated from the high voltage portion of the system. Digital isolation leverages CMOS technology to replace traditional optocouplers and bring greater sophistication and integration than ever before to the isolation device. Silicon Labs’ digital isolators use capacitors and high frequency signaling to create the isolation barrier and pass information across it. To minimize emissions, the internal capacitors are very well matched, and signals are sent using balanced differential signaling. This requires two capacitors to create a single digital channel, as shown in Figure 6. Even with these techniques, isolation in a system, and digital isolation technology itself, introduces new EMI challenges.EMI Challenges from IsolationFigure 5 - Isolation creates a very high impedance between two grounds in a system, effectively eliminating the electrical connection between them.Supply Voltage A Ground A Ground BVery High Impedance Between Grounds A and B Supply Voltage BDC DCCircuit B Signals Figure 6 - Silicon Labs digital isolation channel and balanced differential signaling.Input voltage threshold comparator and OOK Modulator +AC VDDAPower Domain A Power Domain BI s o l a t i o n B a r r i e r Differential RF Carrier Transmitter Matched Iso-CapacitorsSilicon Labs Isolator Channel Ax InputGNDA-AC VDDB Bx Output GNDBDetector and push-pull digital outputThe separation of the power domains creates a high impedance path between the two circuits, as shown in Figure 5. This high impedance path creates a problem for common mode currents induced by large changes in voltage (dv/dt) present on one side and not the other. These E-field induced currents have to find a path back to their source and their paths are often long, not well defined, and high impedance. Eventually, the current returns through parasitic capacitance between the power domains. The large loop area created by these currents can lead to increased conducted and radiated emissions. Minimizing these common mode currents usually involves placing a capacitor across the isolation barrier (known as a Y capacitor) or even interleaving the PCB planes to add additional capacitance. This extra capacitance provides a low impedance, short path for the high frequency current to return to its source. Detailed analysis of Y capacitor placement and PCB inner plane capacitor design can be foundin Silicon Lab’s application note– AN1131: Design Guide for Reducing EMI in Isolated Systems. However, before diving into the intricacies of E-fields and capacitance calculations, many EMI problems can be solved using traditional EMI best practices with a few modifications specific to digital isolators. Three of the most common, and successful, come at no additional cost and involve component selection and careful layout.Digital isolators leverage CMOS technology to create the isolation barrier and transmit signals across them. Silicon Labs’ digital isolators use silicon dioxide to build high voltage capacitors that maintain the isolation barrier. Signals are transmitted across the capacitive barrier using high frequency RF signals. By leveraging on/off keying (OOK) modulation, the RF transmitter is only active during one of the two logic states, as shown in Figure 7. The default output configuration determines when an RF transmitter will be active. If the signal being sent by the isolator is typically either high or low, simply choosing the matching default output state will minimize the transmissions, reducing EMI and power consumption. For example, when isolating a SPI bus with the idle state high, selecting an isolator with an output default high decreases the RF transmissions of the isolator. Figure 8 illustrates the difference between a default low and default high isolator for this SPI bus configuration. In the Silicon Labs’ Si86xx family of digital isolators, Si86xxBx part numbers use low as their default state, while Si86xxEx default to output high. With the proper digital isolator selected, the components around the isolation device may now be optimized for EMI.Method 1: Select the Isolator that Minimizes TransmissionsFigure 7 - Silicon Labs OOK modulation.Figure 8 - Reducing RF transmissions by selecting the default output state of the isolator.Ax Input SignalBx Output SignalOn/Off Keyed RF TransmitterBus Activity CSSCLKSDA‘E’ Ordering Option Modulated Carrier Transmission ‘B’ Ordering Option Modulated Carrier Transmission CSSCLK SDACSSCLK SDAVirtually every digital isolator specifies using a bypass capacitor on the supply pins, and they have a tremendous impact on the EMI performance of the system. The bypass capacitors help reduce AC noise on the power rails. Many times, AC noise results from ripple on the power supply rail due to transient loads from the digital isolator’s normal operation. The bypass capacitors supply additional current to the device during these transient loads, effectively reducing the ripple on the power supply rail. In addition, the bypass capacitors short AC noise to ground and prevent it from entering the digital isolator. Careful selection and placement of the bypass capacitors maximizes their effectiveness.Capacitors act as a short to AC current and a high impedance to DC current. In other words, as the frequency increases the impedance of an ideal capacitor decreases. This holds true in the real world to point. Actual capacitors have an effective series resistance (ESR) and effective series inductance (ESL) due to their construction. As the frequency increases, the ESL eventually dominates, and the capacitor’s impedance begins to increase at the self-resonant frequency. Therefore, reducing the capacitor’s ESL raises the self-resonant frequency and hence, the frequency at which the capacitor’s impedance starts to increase. Figure 9 illustrates this graphically. In general, a smaller sized capacitor will have a lower ESL because ESL depends on the distance between the two capacitor ends. For example, simply moving from an 0805 package size to an 0402 sized capacitor will improve the bypass capacitor’s effectiveness. Furthermore, there are even capacitors built with “reverse geometry” to provide an even lower ESL, as shown in Figure 10. Nonetheless, even with the lowest ESL possible, the placement of the bypass capacitor also plays a critical role.Method 2: Select the Right Bypass CapacitorsNon-ideal Capacitor Model C I m p e d a n c e (l o g s c a l e )Frequency (log scale)Self-resonant frequencyLower ESL will increase the self-resonant frequency for same capacitance value ESR ESL Impedance vs. Frequency of a Non-ideal CapacitorX C =1/wC X L =w E S L Figure 9 - Real world capacitor model and impedance vs frequency.Figure 10 - Standard vs reverse geometry capacitors.Standard 0402 capacitor Reverse geometry 0204 capacitorProperly placing bypass capacitors is just as important as selecting ones with low ESL because traces and vias on the PCBintroduce series inductance. The series inductance of a trace increases with length, making short and wide traces ideal. Also, the length of the return path to the ground pin of digital isolator adds additional series inductance. Simply rotating the capacitor to be close to both the supply and ground pins often reduces the return path length. Figure 11 illustrates ideal placement and non-ideal placement of bypass capacitors. Using these techniques to select low ESL capacitors and optimize the PCB design will maximize the EMI reduction from the bypass capacitors.The EMI principles and techniques shared here provide a foundational understanding of what to consider for designing anautomotive system to meet strict CISPR 25 requirements. For more best practices and explanations of the theories behind EMI, check out Silicon Lab’s application note entitled AN1131: Design Guide for Reducing EMI in Isolated Systems . As vehicle systems become more sophisticated and as electric vehicles become more advanced, EMI will continue to be an important consideration. Isolation is only becoming more important as electric vehicle systems adopt higher voltages to drive greater efficiency. Byconsidering EMI and applying best practices upfront, high-voltage, isolated automotive systems will be ready to pass today and tomorrow’s EMI requirements.Method 3: Optimize Bypass Capacitor PlacementFigure 11 - Optimizing the placement of bypass capacitors.Charlie Ice is a Senior Product Manager at Silicon Labs focusing on the company’s Power overEthernet (PoE) and automotive product lines. Charlie joined Silicon Labs in 2018 with more than 10years managing products in the technology industry. His experience includes microcontrollers, digitalmotor control, digital power supply control, and test and measurement equipment. Prior to joiningSilicon Labs, Charlie managed the hardware resell program at National Instruments after marketingdigital motor control MCUs at Texas Instruments and Microchip Technology. Charlie holds a Masterand Bachelor of Science in Electrical Engineering, both from Rice University in Houston, Texas.。

芯科科技推出全新系列隔离模拟放大器、电压传感器和Delta-Sigma调制器(DSM)器件

芯科科技推出全新系列隔离模拟放大器、电压传感器和Delta-Sigma调制器(DSM)器件

编者按:今日,芯科科技推出了一系列新产品,产品使用第三代技术具有更高标准,新产品更浪涌性能、可靠性、集成度和安全性。

日前,芯科科技(Silicon Labs,NASDAQ:SLAB)推出了一系列隔离模拟放大器、电压传感器和Delta-Sigma调制器(DSM)器件,设计旨在整个温度范围内提供超低温漂的精确电流和电压测量。

新型Si89xx系列产品基于Silicon Labs强大的第三代隔离技术,可提供灵活的电压、电流测量,并且有丰富的输出接口和封装选项,帮助开发人员降低BOM成本、减小电路板空间,适用于各种工业和绿色能源应用,包括电动汽车(EV)电池管理和充电系统、DC-DC 转换器、电动机、太阳能和风力涡轮机逆变器等。

精确电流和电压测量对于功率控制系统的精确操作至关重要。

为了最大限度地提高效率并对故障或负载变化快速响应,系统控制器需要来自高压供电线上的电流和电压信息。

Silicon Labs的第三代隔离技术可在1414V工作电压和13kV双极性浪涌的情况下保持控制器在较宽温度范围内的安全性,并超越严格的行业要求。

据介绍,Silicon Labs现在可提供业界最广泛的电流和电压传感器产品组合。

Si89xx系列包括四个产品类别:•Si892x隔离模拟放大器,特别针对电流分流检测进行了优化。

•Si8931/2隔离模拟放大器,特别针对通用电压检测进行了优化。

•Si8935/6/7隔离DSM器件,业界首创特别针对电压检测进行了优化。

•Si8941/6/7隔离DSM器件,特别针对电流分流检测进行了优化。

Silicon Labs副总裁兼电源产品总经理Brian Mirkin表示:“在过去的十年间,我们的第一代和第二代混合信号隔离技术推动我们数字隔离产品在市场上取得巨大的成功,我们在新型Si89xx器件中使用的第三代技术具有更高标准。

我们的隔离产品将继续取代传统的光耦合器,并且优于竞争对手的数字隔离器,这为需要高压保护的系统设计提供了更高的浪涌性能、可靠性、集成度和一流的安全性。

Silicon Labs Si534xH 相干光时钟产品介绍说明书

Silicon Labs Si534xH 相干光时钟产品介绍说明书

新闻稿Silicon Labs降低相干光市场定时技术的成本和复杂度-单芯片Si534xH时钟系列产品为100G/400G收发器提供高性能、频率灵活的定时解决方案-中国,北京-2016年4月26日-Silicon Labs(芯科科技有限公司,NASDAQ:SLAB)日前推出一系列简化100G/400G相干光线卡(coherent optical line card)和模块设计的抖动衰减时钟,通过提供高频率、灵活的时钟解决方案,显著降低系统成本和复杂度。

Silicon Labs新型Si534xH相干光时钟可以为数据转换器提供低抖动参考定时,可替代依赖于昂贵、大封装尺寸的压控SAW振荡器(VCSO)的分立定时解决方案。

与仅支持单一固定频率的VCSO不同,新型Si534xH时钟提供很宽的频率范围,支持频率高达2.7GHz,且无需改变物料清单(BOM)元器件。

Si5344H和Si5342H时钟提供最佳的频率灵活性和无与伦比的50fs RMS抖动性能。

这些时钟芯片简化了器件采购过程,可采用较短的、两周交货时间的单个时钟IC解决方案替代多个定制的、较长交货时间的VCSO。

凭借抖动衰减PLL、高频率输出驱动器、分数频率合成和数字控制振荡器(DCO)技术,Si534xH系列产品为相干光收发器应用提供所需的全部时钟功能,与竞争对手解决方案相比降低了40%的占用面积及40%的功耗。

获取Silicon Labs Si534xH相干光时钟的更多详细信息,包括数据手册、支持文档和开发工具等,请访问网站:/timing。

通信市场中最大增长驱动因素之一是业内城域网络和数据中心互联(DCI)领域从10G 到100G的转变。

相干光学技术可用于100G和400G应用,因为它使得服务提供商能够通过现有的光纤发送更多的数据,减少为带宽扩展而进行网络升级的成本和复杂性。

当前用于相干光的定时解决方案在成本和尺寸方面还未达到最优化,需要VCSO、时钟发生器和分立器件的多样化组合。

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Silicon Labs has longest TDDB modeled lifetimes
Avago TDDB results: AN-1074,
SiLabs also running long-term dielectric testing
2100+ hours continuous testing @ 1600V without failures
Applied Voltage, Vrms
10ppm Time To Fail, years
Si84xx Si86xx/87xx
90 60 >400 > 400 265 120 10
Avago
>12 >12 >12 12 200 hrs
Silicon Labs Confidential
300
1600V @ 200 hrs
Two common electrical dielectrics are polymer tape and SiO2 Polymer tape: Non-uniform, substantially higher defects than SiO2 Silicon di-oxide (SiO2): Greater dielectric strength and uniformity, very low defect rate Significant maturity and learning over 30+ years Used in trillions of devices sold world wide Si8xxx products use Silicon Dioxide (SiO2) for insulation
Si87xx
TA =150o C
VTEST Device under test for TDDB in a 2 port configuration
14
Silicon Laboratories Confidential
Silicon Labs Confidential
Silabs’ Reliability vs. Optos
Silicon Labs Isolation Products for Sekorm
Silicon Labs Isolation Team, June 2016
Opto-couplers Replacement
What are the key isolation specifications?
Voltage Ratings: ability to withstand high voltage
Silicon Laboratories Confidential
13
Long Term Dielectric Reliability
All dielectrics are subject to aging Modeling is required to predict dielectric lifetimes
Silabs significantly outperforms optos
For Avago - only voltages less than 800V have a lifetime rating
Silabs specifies working voltages up to 1600V
14,391 8722 1310
MTTF
7.9 years 13 years 87 years
Does MTTF matter to customers?
20+ year system lifetime is common target for industrial applications
Top Layer Metal Passivation
Top Layer Metal Top Layer Metal
Passivation
Silicone
LED Die
Insulating Tape
Isolation Capacitor Active Circuit Layers
Isolation Capacitor
1600V lifetime:
Avago - 200 hours* Silabs - 87,600 hours (10 year)
Silabs no isolation field failures: >100M channels shipped
Avago Lifetime Curve
12
Silicon Laboratories Confidential
Silicon Labs Confidential
SiO2 Dielectric Material
SiO2 is the most mature and widely used dielectric available!
SiO2 usage exceeds dielectric tape usage by orders of magnitude
Poor timing characteristics
Long delay times slow system throughput Key parameters (e.g. jitter) often not specified
Marginal common mode transient immunity (CMTI)
Working voltage rating (VIORM)
Continuous lifetime operation
Maximum withstand rating (VIOTM)
1 minute maximum voltage
Si87xx/826x high voltage lifetimes:
`Fast common mode transients can corrupt data
Customers often add BOM to improve CMTI performance
Energy inefficient
Requires high LED drive current – increases overall energy consumption
Silicon Labs Confidential
Optocouplers: 40 Years of Limitations
Poor reliability
Key parameters drift over temperature, VDD and age
CMOS isolator reliability is 10x that of optos
Foundries invested billions in developing and testing SiO2 processes
Proven high reliability in billions of CMOS products in different applications
SiO2
Burried Metal Layer Plate Plate
SiO2
Burried Metal Layer
Active Circuit Layers
DTI
XMITR
RECVR
Detector Die
Si8xxx Isolator Structure with SiO2 Dielectric Optocoupler with polymer insulating tape
Modern low-voltage CMOS ICs subject SiO2 to huge electric fields
Example: 1.8V transistor in a CMOS cell phone chip
Transistor voltage = 1.8V Dielectric thickness = 4nm Electric field = 4.5 MV/cm
Solving these issues requires more BOM, complicating design!
Optocoupler with external clamps to improve CMTI
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Silicon Labs Confidential
Dielectric Comparisons
>60 years at rated working voltage
Noise performance: ability to resist noise
Common Mode Transient Immunity (CMTI)
Device needs to reject high voltage transients Prevents data errors from these transients
Various models used for predicting lifetimes TF = time to fail
All vendors have done TDDB studies
SilLabs has extensive TDDB testing to prove long lifetimes
Modeled using time dependent dielectric breakdown (TDDB) Various models have been studied E-model is the most widely used and the most conservative TDDB models temperature, E-field and material properties
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