呼吸机专用mos管 AP30P04D - 30A -40V TO-252
呼吸机专用mos管 AP20N03D 20A 30V TO-252
1The AP20N03D uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as aBattery protection or in other Switching application.V DS = 30V I D =20AR DS(ON) < 25m Ω@ V GS =10VBattery protection Load switchUninterruptible power supplyPackage Marking and Ordering InformationDescription General Features ApplicationElectrical Characteristics (T C=25℃unless otherwise specified)=10A=15V , V1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.2The data tested by pulsed , pulse width .The EAS data shows Max. rating .3he test condition is V≦ 300us , duty cycle DD=25≦V,V 2%GS =10V,L=0.1mH,I AS=12.7A4.The power dissipation is limited by 150℃ junction temperature5.The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.23Typical Characteristics Fig.2 On-Resistance vs. Gate-Source Fig.3 Forward Characteristics Of Reverse Fig.4 Gate-Charge CharacteristicsFig.5 Normalized V vs. T4VI ASV GS BV DSSV DDEAS=12L x I AS 2 x BV DSSBV DSS -V DDFig.8 Safe Operating AreaFig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform5Package Mechanical DataDimensionsMillimeters Inches Ref.Min.Typ.Max.Min.Typ.Max.A A2B C DE G H LV1V22.1000.660.40 2.500.100.860.600.08300.0260.0160.0980.0040.0340.0246.409.5010.700.3740.4210.0530.0655.906.30L20°6°0.2320.2486.800.2520.2684.47 4.670.1760.1841.09 1.210.0430.0487°1.351.650°6°7°B2 5.18 5.480.2020.216C20.440.580.0170.023D1E15.30REF4.630.1820.209REFDETAIL ATO-252Reel Spectification-TO-252ABBDimensionsMillimeters Inches Ref.Min.Typ.Max.Min.Typ.Max.W E F D0D1P0P1P2A0B0K0T t115.901.657.401.4016.101.857.601.600.6260.0650.2910.0550.6340.0730.2990.0631.40 1.607.9010.4510.600.4110.4170.240.270.0090.0110.0550.0633.90 4.106.900.27110P00.1540.1618.100.3110.3191.90 2.100.0750.0830.100.00440.001.5752.780.10916.001.757.501.501.504.008.002.0010.500.6300.0690.2950.0590.0590.1570.3150.0790.4136.857.002.68 2.880.2700.2760.1050.11339.8040.201.5671.583Attention1,Any and all APM Microelectronics products described or contained herein do not have specificationsthat can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result inserious physical and/or material damage. Consult with your APM Microelectronics representative nearestyou before using any APM Microelectronics products described or contained herein in such applications.2,APM Microelectronics assumes no responsibility for equipment failures that result from using productsat values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronicsproducts described or contained herein.3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the describ ed products in the independent state, and arenot guarantees of the performance, characteristics, and functions of the described products as mountedin the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment.4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible that theseprobabilistic failures could give rise to accidents or events that could endanger human lives that couldgive rise to smoke or fire, or that could cause damage to other property. When designing equipment,adopt safety measures so that these kinds of accidents or events cannot occur. Such measures includebut are not limited to protective circuits and error prevention circuits for safe design, redundantdesign,and structural design.5,In the event that any or all APM Microelectronics products(including technical data, services) describedor contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD.7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. APM Microelectronics believes information herein is accurate andreliable, but no guarantees are made or implied regarding its use or any infringements of intellectualproperty rights or other rights of third parties.8, Any and all information described or contained herein are subject to change without notice due toproduct/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" forthe APM Microelectronics product that you Intend to use.6。
呼吸机专用mos管 AP15P06D -15A -60V TO-252
Millimeters
Inches
Min. Typ. Max. Min. Typ. Max.
A
2.10
2.50 0.083
0.098
A2
0
0.10
0
0.004
B
0.66
0.86 0.026
0.034
B2 5.18
5.48 0.202
0.216
C
0.40
0.60 0.016
0.024
C2 0.44
0.58 0.017
150
Fig.5 Normalized VGS(th) v.s TJ
AP15P06D Rve3.9
Fig.4 Gate-Charge Characteristics
2.5
2.0
1.5
1.0
0.5 -50
0
50
100
150
TJ , Junction Temperature ( )
Fig.6 Normalized RDSON v.s TJ
Typical Characteristics
AP15P06D
-60V P-Channel Enhancement Mode MOSFET
Fig.3 Forward Characteristics of Reverse
1.5
1
0.5
0
-50
TJ
0
,Junction
50
Temperature
(oC)100
---
5
uA
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
呼吸机专用mos管 AP6G03S 6.0A 30V N+P SOP-8
1DescriptionThe AP6G03S uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as aBattery protection or in other Switching application.General FeaturesV DS = 30V I D =10 A R DS(ON) < 25mΩ @ V GS =10V V DS = -30V I D =-7.6 A R DS(ON) < -42mΩ @ V GS =10VApplicationBattery protection Load switchUninterruptible power supplyN-Channel Electrical Characteristics (T J=25℃, unless otherwise noted)V DD=15V , V GS=10V ,R G=3.3,I D=5A1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%3.The EAS data shows Max. rating . The test condition is V DD=25V,V GS=10V,L=0.1mH,I AS=21A4.The power dissipation is limited by 150℃ junction temperature5.The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.2P-Channel Electrical Characteristics (T J=25℃, unless otherwise noted)V DD=-15V , V GS=-10V ,R G=3.3,I D=-5A34150N-Channel Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs Gate-Source Voltage Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge characteristicsFig.5 Normalized V GS(th) vs T J50.010.110.000010.00010.0010.010.11t , Pulse Width (s)N o r m a l i z e d T h e r m a l R e s p o n s e (R t h j c )I ASV GSBV DSSV DD EAS=12L x I AS 2 x BV DSSBV DSS -V DDFig.8 Safe Operating AreaFig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Waveform6Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge CharacteristicsFig.5 Normalized V GS(th) vs T J P-Channel Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs Gate-Source Voltage7Fig.8 Safe Operating AreaFig.9 Normalized Maximum Transient Thermal ImpedanceFig.7 CapacitanceFig.10 Switching Time WaveformFig.11 Unclamped Inductive Waveform8Package Mechanical Data-SOP-8/ESOP-8Attention1,Any and all APM Microelectronics products described or contained herein do not have specificationsthat can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result inserious physical and/or material damage. Consult with your APM Microelectronics representative nearestyou before using any APM Microelectronics products described or contained herein in such applications.2,APM Microelectronics assumes no responsibility for equipment failures that result from using productsat values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronicsproducts described or contained herein.3, Specifications of any and all APM Microelectronics products described or contained hereinstipulate the performance, characteristics, and functions of the describ ed products in the independent state, and arenot guarantees of the performance, characteristics, and functions of the described products as mountedin the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment.4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible that theseprobabilistic failures could give rise to accidents or events that could endanger human lives that couldgive rise to smoke or fire, or that could cause damage to other property. When designing equipment,adopt safety measures so that these kinds of accidents or events cannot occur. Such measures includebut are not limited to protective circuits and error prevention circuits for safe design, redundantdesign,and structural design.5,In the event that any or all APM Microelectronics products(including technical data, services) describedor contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD.7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. APM Microelectronics believes information herein is accurate andreliable, but no guarantees are made or implied regarding its use or any infringements of intellectualproperty rights or other rights of third parties.8, Any and all information described or contained herein are subject to change without notice due toproduct/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" forthe APM Microelectronics product that you Intend to use.9。
呼吸机专用mos管 AP20H04NF 20A 40V DFN5X6
40 -
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=40V,VGS=0V
-
-
1
μA
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
-
- ±100 nA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
VGS=10V,RGEN=3Ω
- 24
-
nS
Turn-Off Fall Time
tf
- 12
பைடு நூலகம்
-
nS
Total Gate Charge Gate-Source Charge Gate-Drain Charge
Qg
- 22.9 -
nC
Qgs
VDS=20V,ID=8A,
- 3.5
-
nC
VGS=10V
Qgd
Product ID
Pack
AP20H04NF
DFN5*6-8L
Marking AP20H04NF
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Clss
- 964
-
PF
Coss
VDS=20V,VGS=0V,
- 109
-
PF
F=1.0MHz
Crss
- 96
呼吸机专用mos管APG60N10D 60A 100V TO-252
General DescriptionAPG60N10D use advanced SGT MOSFET technology toprovide low RDS(ON), low gate charge, fast switchingand excellent avalanche characteristics.This device is specially designed to get better ruggednessand suitable to use inFeaturesLow RDS(on) & FOMExtremely low switching lossExcellent stability and uniformity or InvertorsApplicationsConsumer electronic power supplyMotor controlSynchronous-rectificationIsolated DCSynchronous-rectification applicationsProduct ID Pack Marking Qty(PCS)APG60N10D TO-252-3APG60N10D XXX YYYY2500at T j=25℃ unless otherwise notedParameter Symbol Value UnitDrain source voltage V DS100 VGate source voltage V GS±20 V Continuous drain current1), T C=25 ℃I D60 APulsed drain current2), T C=25 ℃I D, pulse180 APower dissipation3), T C=25 ℃P D125 WSingle pulsed avalanche energy5)E AS100 mJ Operation and storage temperature T stg，T j-55 to 150 ℃ Thermal resistance, junction-case RθJC 1 ℃/WThermal resistance, junction-ambient4)RθJA62 ℃/W1Electrical Characteristics at T j=25 ℃ unless otherwise specified1)Calculated continuous current based on maximum allowable junction temperature.2)Repetitive rating; pulse width limited by max. junction temperature.3)Pd is based on max. junction temperature, using junction-case thermal resistance.4)The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a stillair environment with T a=25 ℃.5)V DD=50 V, R G=25 Ω, L=0.3 mH, starting T j=25 ℃.23Electrical Characteristics DiagramsV , Drain-source voltage (V) DSFigure 1, Typ. output characteristicsFigure 2, Typ. transfer characteristicsDS45 Test circuits and waveformsFigure 4, Diode reverse recovery test circuit & waveformsFigure 1 , G ate c h arge t e st c i rcuit & w a veformFigure , 2 S w itching t ime t e st c i rcuit & w a veformsFigure , 3 Unclamped i n ductive s w itching (UIS) t e st c i rcuit & w a veforms6Package Mechanical DataDimensionsMillimeters Inches Ref.Min.Typ.Max.Min.Typ.Max.A A2B C DE G H LV1V22.1000.660.40 2.500.100.860.600.08300.0260.0160.0980.0040.0340.0246.409.5010.700.3740.4210.0530.0655.906.30L20°6°0.2320.2486.800.2520.2684.47 4.670.1760.1841.09 1.210.0430.0487°1.351.650°6°7°B2 5.18 5.480.2020.216C20.440.580.0170.023D1E15.30REF4.630.1820.209REFDETAIL ATO-252Reel Spectification-TO-252ABBDimensionsMillimeters Inches Ref.Min.Typ.Max.Min.Typ.Max.W E F D0D1P0P1P2A0B0K0T t115.901.657.401.4016.101.857.601.600.6260.0650.2910.0550.6340.0730.2990.0631.40 1.607.9010.4510.600.4110.4170.240.270.0090.0110.0550.0633.90 4.106.900.27110P00.1540.1618.100.3110.3191.90 2.100.0750.0830.100.00440.001.5752.780.10916.001.757.501.501.504.008.002.0010.500.6300.0690.2950.0590.0590.1570.3150.0790.4136.857.002.68 2.880.2700.2760.1050.11339.8040.201.5671.583APG60N10D100V N-SGT Enhancement Mode MOSFETAttention1,Any and all APM Microelectronics products described or contained herein do not have specificationsthat can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result inserious physical and/or material damage. Consult with your APM Microelectronics representative nearestyou before using any APM Microelectronics products described or contained herein in such applications.2,APM Microelectronics assumes no responsibility for equipment failures that result from using productsat values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronicsproducts described or contained herein.3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the describ ed products in the independent state, and arenot guarantees of the performance, characteristics, and functions of the described products as mountedin the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment.4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible that theseprobabilistic failures could give rise to accidents or events that could endanger human lives that couldgive rise to smoke or fire, or that could cause damage to other property. When designing equipment,adopt safety measures so that these kinds of accidents or events cannot occur. Such measures includebut are not limited to protective circuits and error prevention circuits for safe design, redundantdesign,and structural design.5,In the event that any or all APM Microelectronics products(including technical data, services) describedor contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD.7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. APM Microelectronics believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectualproperty rights or other rights of third parties.8, Any and all information described or contained herein are subject to change without notice due toproduct/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" forthe APM Microelectronics product that you Intend to use.7。
呼吸机专用mos管APG12N10D 12A 100V TO-252.
1General DescriptionAPG12N10D use advanced SGT MOSFET technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics.This device is specially designed to get better ruggednessand suitable to use inFeaturesLow RDS(on) & FOMExtremely low switching lossExcellent stability and uniformity or InvertorsApplicationsConsumer electronic power supply Motor controlSynchronous-rectification Isolated DCSynchronous-rectification applicationsat T j =25℃ unless otherwise notedElectrical Characteristics at T j=25 ℃ unless otherwise specified23Electrical Characteristics DiagramsV DS , Drain-source voltage (V)Figure 3, Typ. capacitancesFigure 4, Typ. gate chargeFigure 5, Drain-source breakdown voltageFigure 6, Drain-source on-state resistanceRD S (O N ) , O n -r e s i s t a n c e ( m Ω )Figure 1, Typ. output characteristics I D , D r a i n c u r r e n t (A )V DS , Drain-source voltage (V)I D , D r a i n c u r r e n t (A )4Figure 9, Drain currentFigure 10, Safe operation area T C =25 ℃Figure 7, Forward characteristic of body diode Figure 8, Drain-source on-state resistanceI S , S o u r c e c u r r e n t (A )V SD , Source-Drain voltage (V)I D , Drain current(A)R D S (O N ), O n -r e s i s t a n c e (Ω)I ASV GSBV DSSV DDEAS=12L x I AS 2 x BV DSS BV DSS -V DDFig.11 Switching Time WaveformFig.12 Unclamped Inductive Switching Waveform5Package Mechanical Data-TO-252-3LDimensionsMillimeters Inches Ref.Min.Typ.Max.Min.Typ.Max.A A2B C DE G H LV1V22.1000.660.40 2.500.100.860.600.08300.0260.0160.0980.0040.0340.0246.409.5010.700.3740.4210.0530.0655.906.30L20°6°0.2320.2486.800.2520.2684.47 4.670.1760.1841.09 1.210.0430.0487°1.351.650°6°7°B2 5.18 5.480.2020.216C20.440.580.0170.023D1E15.30REF4.630.1820.209REFDETAIL ATO-252Reel Spectification-TO-252ABBDimensionsMillimeters Inches Ref.Min.Typ.Max.Min.Typ.Max.W E F D0D1P0P1P2A0B0K0T t115.901.657.401.4016.101.857.601.600.6260.0650.2910.0550.6340.0730.2990.0631.40 1.607.9010.4510.600.4110.4170.240.270.0090.0110.0550.0633.90 4.106.900.27110P00.1540.1618.100.3110.3191.90 2.100.0750.0830.100.00440.001.5752.780.10916.001.757.501.501.504.008.002.0010.500.6300.0690.2950.0590.0590.1570.3150.0790.4136.857.002.68 2.880.2700.2760.1050.11339.8040.201.5671.583Attention1,Any and all APM Microelectronics products described or contained herein do not have specificationsthat can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result inserious physical and/or material damage. Consult with your APM Microelectronics representative nearestyou before using any APM Microelectronics products described or contained herein in such applications.2,APM Microelectronics assumes no responsibility for equipment failures that result from using productsat values that exceed, even momentarily, rated values (such as maximum ratings, operating conditionranges, or other parameters) listed in products specifications of any and all APM Microelectronicsproducts described or contained herein.3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the describ ed products in the independent state, and arenot guarantees of the performance, characteristics, and functions of the described products as mountedin the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment.4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible that theseprobabilistic failures could give rise to accidents or events that could endanger human lives that couldgive rise to smoke or fire, or that could cause damage to other property. When designing equipment,adopt safety measures so that these kinds of accidents or events cannot occur. Such measures includebut are not limited to protective circuits and error prevention circuits for safe design, redundantdesign,and structural design.5,In the event that any or all APM Microelectronics products(including technical data, services) describedor contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD.7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. APM Microelectronics believes information herein is accurate andreliable, but no guarantees are made or implied regarding its use or any infringements of intellectualproperty rights or other rights of third parties.8, Any and all information described or contained herein are subject to change without notice due toproduct/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" forthe APM Microelectronics product that you Intend to use.6Copyright Attribution“APM-Microelectronice”7。
呼吸机专用mos管 AP5N50D 5A 500V TO-252
Gate-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation (TC = 25ºC)
Operating Junction and Storage Temperature Range
ID, Drain Current (A)
3
AP5N50D Rve1.0
臺灣永源微電子科技有限公司
AP5N50D
500V N-Channel Enhancement Mode MOSFE
103
10
Ciss
8
VDD = 400V
VDD = 250V
102
C oss
6
VDD = 100V
101
Crss
V(BR)DSS IDSS IGSS VGS(th)
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Gate-Source Threshold Voltage
VGS = 0V, ID = 250µA
-- 13.5 --
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 400V, ID = 5A, VGS = 10V
--
2
--
nC
--
6
--
td(on)
Turn-on Delay Time
tr
Turn-on Rise Time
呼吸机专用mos管 AP6G04S 6A 40V SOP-8
1DescriptionThe AP6G04S uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as aBattery protection or in other Switching application.General FeaturesV DS = 40V I D =6A R DS(ON) < 26mΩ @ V GS =10V V DS = -40V I D =6A R DS(ON) < 32mΩ @ V GS =10VApplicationBattery protection Load switchUninterruptible power supplyV DD=20V , V GS=10V ,R G=3.3I D=1A1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%3.The EAS data shows Max. rating . The test condition is V DD=25V,V GS=10V,L=0.1mH,I AS=18A4.The power dissipation is limited by 150℃ junction temperature5 .The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.2V DD=-15V , V GS=-10V , R G=3.3, I D=-1A4150Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge CharacteristicsFig.5 Normalized V vs. TI AS V GSBV DSS V DD EAS=12L x I AS 2 x BV DSSBV DSS -V DDFig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Wave 56150P-Channel Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance v.s Gate-SourceFig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge CharacteristicsFig.5 Normalized V GS(th) v.s T JFig.8 Safe Operating AreaFig.9 Normalized Maximum Transient Thermal ImpedanceFig.7 CapacitanceFig.10 Switching Time Waveform Fig.11 Unclamped Inductive Waveform78Package Mechanical Data-SOP-8Attention1,Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics products described or contained herein in such applications.2,APM Microelectronics assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronics products described or contained herein.3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment.4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design,and structural design.5,In the event that any or all APM Microelectronics products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.6, No part of this publication may be reproduced or transmitted in any form or by anymeans,electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD.7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. APM Microelectronics believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.8, Any and all information described or contained herein are subject to change without notice due to product/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" for the APM Microelectronics product that you Intend to use.。
呼吸机专用mos管 AP30P03D -30A -30V TO-252
AP30P03D RVE3.0 臺灣永源微電子科技有限公司1DescriptionThe AP30P03D uses advanced trench technologyto provide excellent R DS(ON), low gate charge andoperation with gate voltages as low as 4.5V. Thisdevice is suitable for use as aBattery protection or in other Switching application.General FeaturesV DS = -30V I D =-30 AR DS(ON) < 20mΩ @ V GS=10VApplicationBattery protectionLoad switchUninterruptible power supplyPackage Marking and Ordering InformationProduct ID Pack Marking Qty(PCS) AP30P03D TO-252-3AP30P03D XXXX YYYY2500 Absolute Maximum Ratings (T C=25℃unless otherwise noted)Symbol ParameterRatingUnits 10s Steady StateV DS Drain-Source Voltage-30 V V GS Gate-Sou r ce Voltage ±20VI D@T C=25℃Continuous Drain Current, V GS @ -10V1-30 A I D@T C=100℃Continuous Drain Current, V GS @ -10V1-22 A I D@T A=25℃Continuous Drain Current, V GS @ -10V1-13.4 -8.5 A I D@T A=70℃Continuous Drain Current, V GS @ -10V1-10.7 -6.8 AI DM Pulsed Drain Current2-70 AEAS Single Pulse Avalanche Energy372.2 mJI AS Avalanche Current -38 A P D@T C=25℃Total Power Dissipation434.7 W P D@T A=25℃Total Power Dissipation4 5 2 W T STG Storage Temperature Range -55 to 150 ℃ T J Operating Junction Temperature Range -55 to 150 ℃ RθJA Thermal Resistance Junction-Ambient 162 ℃/W RθJA Thermal Resistance Junction-Ambient 1 (t ≤10s) 25 ℃/W RθJC Thermal Resistance Junction-Case1 3.6 ℃/WAP30P03D RVE3.0 臺灣永源微電子科技有限公司2J Symbol Parameter Conditions Min. Typ. Max. Unit BV DSS Drain-Source Breakdown Voltage V GS =0V , I D =-250uA -30 --- --- V △BV DSS /△T J BV DSS Temperature Coefficient Reference to 25℃ , I D =-1mA--- -0.022 --- V/℃R DS(ON) Static Drain-Source On-Resistance 2 V GS =-10V , I D =-15A--- 18 20 m Ω V GS =-4.5V , I D =-10A --- 25 32 V GS(th) Gate Threshold VoltageV GS =V DS , I D =-250uA-1.0 --- -2.5 V △V GS(th) V GS(th) Temperature Coefficient --- 4.6 --- mV/℃ I DSS Drain-Source Leakage Current V DS =-24V , V GS =0V , T J =25℃--- --- -1 uA V DS =-24V , V GS =0V , T J =55℃ --- --- -5 I GSS Gate-Source Leakage Current V GS =±20V , V DS =0V --- --- ±100 nA gfs Forward Transconductance V DS =-5V , I D =-10A --- 5 --- S R g Gate Resistance V DS =0V , V GS =0V , f=1MHz--- 13 --- Ω Q g Total Gate Charge (-4.5V) V DS =-15V , V GS =-4.5V , I D =-15A ---12.5 --- nC Q gs Gate-Source Charge ---5.4 --- Q gd Gate-Drain Charge --- 5 --- T d(on) Turn-On Delay Time V DD =-15V , V GS =-10V,R G =3.3, I D =-15A--- 4.4 --- ns T r Rise Time --- 11.2 --- T d(off) Turn-Off Delay Time --- 34 --- T f Fall Time --- 18 --- C iss Input Capacitance V DS =-15V , V GS =0V , f=1MHz --- 1345 --- pF C oss Output Capacitance --- 194 --- C rss Reverse Transfer Capacitance --- 158 --- I S Continuous Source Current 1,5 V G =V D =0V , Force Current --- --- -35 A I SM Pulsed Source Current 2,5 --- --- -70 A V SD Diode Forward Voltage 2 V GS =0V , I S =-1A , T J =25℃ --- --- -1.2 V t rr Reverse Recovery Time I F =-15A , dI/dt=100A/µs , T J =25℃--- 12.4 --- nS Q rrReverse Recovery Charge---5---nC-30V P-Channel Enhancement Mode MOSFET3150 Fig.1 Typical Output CharacteristicsFig.2 On-Resistance v.s Gate-Source Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics Fig.5 Normalized V GS(th) v.s T J4Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching WaveformAP30P03D RVE3.0 臺灣永源微電子科技有限公司5Package Mechanical DataDimensionsMillimeters Inches Ref.Min.Typ.Max.Min.Typ.Max.A A2B C DE G H LV1V22.1000.660.40 2.500.100.860.600.08300.0260.0160.0980.0040.0340.0246.409.5010.700.3740.4210.0530.0655.906.30L20°6°0.2320.2486.800.2520.2684.47 4.670.1760.1841.09 1.210.0430.0487°1.351.650°6°7°B2 5.18 5.480.2020.216C20.440.580.0170.023D1E15.30REF4.630.1820.209REFB2E HBGLC2DETAIL ADETAIL AACV 1V 1V 2A 2DV 1E1D 1L2TO-252Reel Spectification-TO-252WEFD 0P0P2P1D 1Tt1B 0K0A05°AAA BBB BDimensionsMillimeters Inches Ref.Min.Typ.Max.Min.Typ.Max.W E F D0D1P0P1P2A0B0K0T t115.901.657.401.4016.101.857.601.600.6260.0650.2910.0550.6340.0730.2990.0631.40 1.607.9010.4510.600.4110.4170.240.270.0090.0110.0550.0633.90 4.106.900.27110P00.1540.1618.100.3110.3191.90 2.100.0750.0830.100.00440.001.5752.780.109Φ329Φ132016.001.757.501.501.504.008.002.0010.500.6300.0690.2950.0590.0590.1570.3150.0790.4136.857.002.68 2.880.2700.2760.1050.11339.8040.201.5671.583Attention1,Any and all APM Microelectronics products described or contained herein do not have specificationsthat can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result inserious physical and/or material damage. Consult with your APM Microelectronics representative nearestyou before using any APM Microelectronics products described or contained herein in such applications.2,APM Microelectronics assumes no responsibility for equipment failures that result from using productsat values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronicsproducts described or contained herein.3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the describ ed products in the independent state, and arenot guarantees of the performance, characteristics, and functions of the described products as mountedin the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment.4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible that theseprobabilistic failures could give rise to accidents or events that could endanger human lives that couldgive rise to smoke or fire, or that could cause damage to other property. When designing equipment,adopt safety measures so that these kinds of accidents or events cannot occur. Such measures includebut are not limited to protective circuits and error prevention circuits for safe design, redundantdesign,and structural design.5,In the event that any or all APM Microelectronics products(including technical data, services) describedor contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD.7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. APM Microelectronics believes information herein is accurate andreliable, but no guarantees are made or implied regarding its use or any infringements of intellectualproperty rights or other rights of third parties.8, Any and all information described or contained herein are subject to change without notice due toproduct/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" forthe APM Microelectronics product that you Intend to use.6AP30P03D RVE3.0 臺灣永源微電子科技有限公司。
呼吸机专用mos管APG20N10D 20A 100V TO-252
1General DescriptionAPG20N10D use advanced SGT MOSFET technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics.This device is specially designed to get better ruggednessand suitable to use inFeaturesLow RDS(on) & FOMExtremely low switching lossExcellent stability and uniformity or InvertorsApplicationsConsumer electronic power supply Motor controlSynchronous-rectification Isolated DCSynchronous-rectification applicationsat T j =25℃ unless otherwise notedElectrical Characteristics at T j=25 ℃ unless otherwise specifiedNote1)Calculated continuous current based on maximum allowable junction temperature.2)Repetitive rating; pulse width limited by max. junction temperature.3)Pd is based on max. junction temperature, using junction-case thermal resistance.4)V DD=50 V, R G=50 Ω, L=0.3 mH, starting T j=25 °C.5)The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a stillair environment with T a=25 °C.2Electrical Characteristics DiagramsV DS, Drain-source voltage (V)Figure 5, Drain-source breakdown voltage Figure 6, Drain-source on-state resistance34 APG20N10D R ev1.0APG20N10D R ev 1.0 臺灣永源微電子科技有限公司5Figure 4, Diode reverse recovery test circuit & waveformsFigure 1 , G ate c h arge t e st c i rcuit & w a veformFigure , 2 S w itching t ime t e st c i rcuit & w a veformsFigure , 3 Unclamped i n ductive s w itching (UIS) t e st c i rcuit & w a veformsAPG20N10D R ev 1.0 6Package Mechanical DataDimensionsMillimeters Inches Ref.Min.Typ.Max.Min.Typ.Max.A A2B C DE G H LV1V22.1000.660.40 2.500.100.860.600.08300.0260.0160.0980.0040.0340.0246.409.5010.700.3740.4210.0530.0655.906.30L20°6°0.2320.2486.800.2520.2684.47 4.670.1760.1841.09 1.210.0430.0487°1.351.650°6°7°B2 5.18 5.480.2020.216C20.440.580.0170.023D1E15.30REF4.630.1820.209REFDETAIL ATO-252Reel Spectification-TO-252ABBDimensionsMillimeters Inches Ref.Min.Typ.Max.Min.Typ.Max.W E F D0D1P0P1P2A0B0K0T t115.901.657.401.4016.101.857.601.600.6260.0650.2910.0550.6340.0730.2990.0631.40 1.607.9010.4510.600.4110.4170.240.270.0090.0110.0550.0633.90 4.106.900.27110P00.1540.1618.100.3110.3191.90 2.100.0750.0830.100.00440.001.5752.780.10916.001.757.501.501.504.008.002.0010.500.6300.0690.2950.0590.0590.1570.3150.0790.4136.857.002.68 2.880.2700.2760.1050.11339.8040.201.5671.583Attention1,Any and all APM Microelectronics products described or contained herein do not havespecifications that can handle applications that require extremely high levels of reliability, such aslife support systems, aircraft's control systems, or other applications whose failure can bereasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics productsdescribed or contained herein in such applications.2,APM Microelectronics assumes no responsibility for equipment failures that result from usingproducts at values that exceed, even momentarily, rated values (such as maximum ratings,operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronics products described or contained herein.3, Specifications of any and all APM Microelectronics products described or contained hereinstipulate the performance, characteristics, and functions of the described products in theindependent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms andstates that cannot be evaluated in an independent device, the customer should always evaluate andtest devices mounted in the customer’s products or equipment.4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible thatthese probabilistic failures could give rise to accidents or events that could endanger human livesthat could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safedesign, redundant design,and structural design.5,In the event that any or all APM Microelectronics products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from theauthorities concerned in accordance with the above law.6, No part of this publication may be reproduced or transmitted in any form or by anymeans,electronic or mechanical, including photocopying and recording, or any information st orageor retrieval system, or otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD.7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. APM Microelectronics believes information herein is accurateand reliable, but no guarantees are made or implied regarding its use or any infringements ofintellectual property rights or other rights of third parties.8, Any and all information described or contained herein are subject to change without notice due to product/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" for the APM Microelectronics product that you Intend to use.7 APG20N10D R ev1.0。
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-40V P-Channel Enhancement Mode MOSFET
Description
The AP30P04D uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
7
14
Qg
Total Gate Charge (-4.5V)
--- 27.9 ---
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS=-20V , VGS=-4.5V , ID=-12A ---
ns
ID=-1A
---
9.6
---
Ciss
Input Capacitance
--- 3500 ---
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS=-15V , VGS=0V , f=1MHz
---
323
---
pF
--- 222 ---
-55 to 150 -55 to 150
62 2.4
Units V V A A A A A mJ A W W ℃ ℃
℃/W ℃/W
1
AP30P04D Rve3.8
臺灣永源微電子科技有限公司
AP30P04D
-40V P-Channel Enhancement Mode MOSFET
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
TJ
Operating Junction Temperature Range
RθJA
Thermal Resistance Junction-Ambient 1
RθJC
Thermal Resistance Junction-Case1
Rating -40 ±20 -30 -28 -10 -8 -105 146 -54 52.1 2
0.001
0.01
t , Pulse Width (s)
PDM
T ON T
D = TON/T TJpeak = TC+PDMXRθJC
0.1
1
Fig.9 Normalized Maximum Transient Thermal Impedance
100us 1ms 10ms 100ms DC
100
10
operation with gate voltages as low as 4.5V. This
device is suitable for use as a
Battery protection or in other Switching application.
General Features
VDS = -40V ID =30 A RDS(ON) < 13mΩ @ VGS=10V
4
Fig.10 Switching Time Waveform AP30P04D Rve3.8
Fig.11 Unclamped Inductive Waveform 臺灣永源微電子科技有限公司
5
V1 V2
Package Mechanical Data
AP30P04D
-40V P-Channel Enhancement Mode MOSFET
3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-54A 4.The power dissipation is limited by 150℃ junction temperature
7.7
---
nC
---
7.5
---
Td(on) Tr
Td(off) Tf
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
---
40
---
VDD=-15V , VGS=-10V , ---
35.2
---
RG=3.3 ,
--- 100 ---
diode
1.5
0
0
20
40
60
QG , Total Gate Charge (nC)
Fig.4 Gate-Charge Characteristics
2.0
Normalized On Resistance
Normalized -VGS(th)
1
1.5
0.5
1.0
3
0
-50
0
50
100
150
TJ ,Junction Temperature ( ℃)
0.421
L
1.09
V1
L2 1.35
1.21 0.043 1.65 0.053
0.048 0.065
E1 L2
V1
7°
7°
V2
0°
6°
0°
6°
ห้องสมุดไป่ตู้
DETAIL A
D1 A2
W FE
D1 Φ329
B0
TO-252
Reel Spectification-TO-252
D0
P0
A
A
B P2
T t1
P1 A0
16
14
12
-VGS Gate to Source Voltage (V)
-IS Source Current(A)
0
0
0.25
0.5
0.75
1
-VDS Drain-to-Source Voltage (V)
Fig.1 Typical Output Characteristics
12
10
8
6
TJ=150℃ TJ=25℃
5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2
AP30P04D Rve3.8
臺灣永源微電子科技有限公司
-40V P-Channel Enhancement Mode MOSFET
10000
F=1.0MHz
1000.00
1000
Ciss Coss
100.00 10.00
-ID (A)
Normalized Thermal Response (RθJC)
Crss
1.00
100
10
1
5-VDS Dra9 in to So1u3rce Vo1lt7age(V) 21
Fig.5 Normalized VGS(th) v.s TJ
AP30P04D Rve3.8
0.5
-50
0
50
100
150
TJ , Junction Temperature (℃)
Fig.6 Normalized RDSON v.s TJ
臺灣永源微電子科技有限公司
Capacitance (pF)
AP30P04D
Reference to 25℃ , ID=-1mA
--- -0.023 --- V/℃
VGS=-10V , ID=-18A
--- 10.5 13
RDS(ON) VGS(th)
Static Drain-Source On-Resistance2 Gate Threshold Voltage
VGS=-4.5V , ID=-12A
25
Fig.7 Capacitance
1 DUTY=0.5
0.10
Tc=25oC
Single Pulse
0.01
0.1
1
10
-VDS (V)
Fig.8 Safe Operating Area
0.2
0.1 0.1 0.05 0.02 0.01
0.01 SINGLE
0.001 0.00001
0.0001
AP30P04D XXX YYYY
2500
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃
IDM
Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1
Symbol
Parameter
Conditions
Min. Typ. Max. Unit
BVDSS Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient